JPH0461930U - - Google Patents
Info
- Publication number
- JPH0461930U JPH0461930U JP10370290U JP10370290U JPH0461930U JP H0461930 U JPH0461930 U JP H0461930U JP 10370290 U JP10370290 U JP 10370290U JP 10370290 U JP10370290 U JP 10370290U JP H0461930 U JPH0461930 U JP H0461930U
- Authority
- JP
- Japan
- Prior art keywords
- potential
- gate
- drain
- mosfet
- comparator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Electronic Switches (AREA)
Description
第１図は本考案の第１の実施例の回路図、第２
図ａ〜ｄは第１図の回路の動作を説明するための
各信号の波形図、第３図は本考案の第２の実施例
の回路図、第４図ａ〜ｃは従来のＭＯＳＦＥＴの
ゲート駆動回路の三つの例の回路図である。
１……ＭＯＳＦＥＴ、Ｇ……ゲート端子、Ｄ…
…ドレイン端子、Ｓ……ソース端子、２……コン
パレータ、３，３ａ……クランプ回路、Ｔ３……
イネーブル端子、４……抵抗、５……制御回路、
６……負荷、７……電源、ＶＣＬ……クランプ電
圧、ＶＤＳ……ドレイン電位、ＶＧ……ゲート電
位、Ｖｍ……ミラー電圧。
Figure 1 is a circuit diagram of the first embodiment of the present invention;
Figures a to d are waveform diagrams of each signal to explain the operation of the circuit in Figure 1, Figure 3 is a circuit diagram of the second embodiment of the present invention, and Figures 4 a to c are diagrams of conventional MOSFETs. FIG. 3 is a circuit diagram of three examples of gate drive circuits. 1...MOSFET, G...gate terminal, D...
...Drain terminal, S...Source terminal, 2...Comparator, 3, 3a...Clamp circuit, T3...
Enable terminal, 4...Resistor, 5...Control circuit,
6...Load, 7...Power supply, VCL...Clamp voltage, VDS...Drain potential, VG...Gate potential, Vm...Mirror voltage.
Claims (1)
較するコンパレータと、前記ゲート電位とドレイ
ン電位がほぼ同電位となるミラー効果動作領域に
て前記コンパレータの比較出力信号にて前記ＭＯ
ＳＦＥＴのゲート・ドレイン間を所定電圧でクラ
ンプするクランプ回路とを有することを特徴とす
るＭＯＳＦＥＴのゲート駆動回路。 A comparator that compares the gate potential and drain potential of the MOSFET, and a comparison output signal of the comparator in the Miller effect operation region where the gate potential and drain potential are approximately the same potential.
A gate drive circuit for a MOSFET, comprising a clamp circuit that clamps the gate and drain of the SFET at a predetermined voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10370290U JPH0461930U (en) | 1990-10-02 | 1990-10-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10370290U JPH0461930U (en) | 1990-10-02 | 1990-10-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0461930U true JPH0461930U (en) | 1992-05-27 |
Family
ID=31848674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10370290U Pending JPH0461930U (en) | 1990-10-02 | 1990-10-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0461930U (en) |
-
1990
- 1990-10-02 JP JP10370290U patent/JPH0461930U/ja active Pending
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