JPS6370734U - - Google Patents
Info
- Publication number
- JPS6370734U JPS6370734U JP16464086U JP16464086U JPS6370734U JP S6370734 U JPS6370734 U JP S6370734U JP 16464086 U JP16464086 U JP 16464086U JP 16464086 U JP16464086 U JP 16464086U JP S6370734 U JPS6370734 U JP S6370734U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- field effect
- effect transistor
- gate
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Description
第１図および第２図が本考案に関するものであ
り、内第１図は本考案による電界効果トランジス
タのゲート電圧制限回路の原理回路図、第２図は
本考案回路をＤＣ―ＤＣコンバータに適用した実
施例を示す回路図である。第３図は従来技術によ
る電界効果トランジスタのゲート電圧制限回路の
例の要部の回路図である。図において、
１，３：抵抗、１０：電界効果トランジスタな
いしはＭＯＳＦＥＴ、２０：充電用駆動トランジ
スタ、２１，２２：充電用トランジスタがダーリ
ントントランジスタである場合のそれを構成する
トランジスタ、３０：放電用駆動トランジスタ、
４０：過電圧制限手段ないしはツエナダイオード
、４１，５４：高抵抗、４２：過電圧制限手段と
してのツエナダイオード、５０：集積回路、５１
：制御回路、５２，５３：前段トランジスタ、６
０：負荷、Ｃｇ：ゲートキヤパシタンス、Ｇ：電
界効果トランジスタのゲート、である。
Figures 1 and 2 are related to the present invention, of which Figure 1 is a principle circuit diagram of the gate voltage limiting circuit of a field effect transistor according to the present invention, and Figure 2 is a diagram showing the application of the circuit of the present invention to a DC-DC converter. FIG. FIG. 3 is a circuit diagram of a main part of an example of a gate voltage limiting circuit for a field effect transistor according to the prior art. In the figure, 1, 3: resistor, 10: field effect transistor or MOSFET, 20: charging drive transistor, 21, 22: transistors constituting the charging transistor when it is a Darlington transistor, 30: discharging drive transistor ,
40: Overvoltage limiting means or Zener diode, 41, 54: High resistance, 42: Zener diode as overvoltage limiting means, 50: Integrated circuit, 51
: control circuit, 52, 53: front stage transistor, 6
0: load, Cg: gate capacitance, G: gate of field effect transistor.
Claims (1)
ゲートに対し充電電流を供給する駆動トランジス
タにバイポーラ形トランジスタを用い、電界効果
トランジスタのゲートに掛かる過電圧の制限用と
して該駆動トランジスタのベースにその電位を制
限する過電圧制限手段を接続したことを特徴とす
る電界効果トランジスタのゲート電圧制限回路。 (2) 実用新案登録請求の範囲第１項記載の回路
において、過電圧制限手段がツエナダイオードで
あることを特徴とする電界効果トランジスタのゲ
ート電圧制限回路。[Claims for Utility Model Registration] (1) A bipolar transistor is used as a drive transistor that supplies charging current to the gate of a field effect transistor when it is turned on, and the drive is used to limit overvoltage applied to the gate of the field effect transistor. A gate voltage limiting circuit for a field effect transistor, characterized in that an overvoltage limiting means for limiting the potential of the transistor is connected to the base of the transistor. (2) A gate voltage limiting circuit for a field effect transistor, in which the overvoltage limiting means is a Zener diode in the circuit according to claim 1 of the utility model registration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16464086U JPS6370734U (en) | 1986-10-27 | 1986-10-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16464086U JPS6370734U (en) | 1986-10-27 | 1986-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6370734U true JPS6370734U (en) | 1988-05-12 |
Family
ID=31093944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16464086U Pending JPS6370734U (en) | 1986-10-27 | 1986-10-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6370734U (en) |
-
1986
- 1986-10-27 JP JP16464086U patent/JPS6370734U/ja active Pending
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