JPH0462014B2 - - Google Patents

Info

Publication number
JPH0462014B2
JPH0462014B2 JP59200016A JP20001684A JPH0462014B2 JP H0462014 B2 JPH0462014 B2 JP H0462014B2 JP 59200016 A JP59200016 A JP 59200016A JP 20001684 A JP20001684 A JP 20001684A JP H0462014 B2 JPH0462014 B2 JP H0462014B2
Authority
JP
Japan
Prior art keywords
thin film
metal plate
metal
infrared
absorbing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59200016A
Other languages
Japanese (ja)
Other versions
JPS6177729A (en
Inventor
Kunio Nakamura
Toyoichi Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59200016A priority Critical patent/JPS6177729A/en
Publication of JPS6177729A publication Critical patent/JPS6177729A/en
Publication of JPH0462014B2 publication Critical patent/JPH0462014B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、熱赤外線計測において、熱赤外発生
部の面積を熱赤外量で検知することにより、熱赤
外発生部の位置情報を得るための赤外検出素子、
一例として、一定温度の発熱体の一端を監視し、
その端部の位置を測定するのに用いる赤外検出素
子の製造方法に関する。
[Detailed Description of the Invention] Industrial Application Field The present invention is for obtaining position information of a thermal infrared generating part by detecting the area of the thermal infrared generating part by the amount of thermal infrared rays in thermal infrared measurement. infrared detection element,
As an example, monitoring one end of a heating element at a constant temperature;
The present invention relates to a method of manufacturing an infrared detection element used to measure the position of its end.

従来例の構成とその問題点 従来の熱電堆型赤外検出素子を、第1図によつ
て説明すると、左右の支持台1,1の上に配置さ
れた基板薄膜2に、二種類の金属薄層3,4が交
互にその両端が重積接合されて直列に配置され、
この二種類の金属薄層3,4の重積接合部が一つ
おきに感温接合部5と基準接合部6(第2図参
照)に分離配置され、感温接合部5の上に赤外吸
収層7が配置されている。尚、基準接合部6は左
右の支持台1,1が位置する基板薄膜2の左右両
側上面に位置していて、赤外線が入射しても昇温
しないようになつている。8は直列に接合配置さ
れた二種類の金属薄層3,4の末端部に重合配置
された信号取出電極である。
Configuration of conventional example and its problems The conventional thermopile type infrared detection element will be explained with reference to FIG. The thin layers 3 and 4 are alternately arranged in series with their ends stacked and joined,
The stacked joints of these two types of metal thin layers 3 and 4 are arranged separately into a temperature-sensitive joint 5 and a reference joint 6 (see Figure 2) every other time, and a red layer is placed on top of the temperature-sensitive joint 5. An outer absorbent layer 7 is arranged. Note that the reference joint portion 6 is located on both left and right upper surfaces of the substrate thin film 2 on which the left and right support stands 1, 1 are located, so that the temperature does not rise even if infrared rays are incident thereon. Reference numeral 8 denotes a signal extraction electrode which is placed overlappingly at the ends of the two metal thin layers 3 and 4 which are connected in series.

斯かる構成の熱電堆型赤外検出素子9は、赤外
吸収層7に赤外線が照射されると、感温接合部5
が昇温し、基準接合部6との温度差に相当した起
電力がゼーベツク効果により信号取出電極8に発
生するが、赤外線のエネルギーを有効に電気信号
に変換するために感温接合部5は極力熱容量を小
さくする必要がある。そのため、赤外吸収層7及
び感温接合部5の蒸着される基板薄膜2の厚さは
極力薄くするわけであるが、10μm程度の厚さに
なると、甚だ取扱いが厄介で、各種の蒸着作業及
びマウント作業、特に基板薄膜2を支持台1,1
に接着するのは困難を極め、赤外検出素子9を製
造する上での歩留低下の原因となつている。
In the thermopile-type infrared detection element 9 having such a configuration, when the infrared absorption layer 7 is irradiated with infrared rays, the temperature-sensitive junction 5
temperature rises, and an electromotive force corresponding to the temperature difference with the reference junction 6 is generated at the signal extraction electrode 8 due to the Seebeck effect. It is necessary to reduce the heat capacity as much as possible. Therefore, the thickness of the substrate thin film 2 on which the infrared absorbing layer 7 and the temperature-sensitive junction 5 are deposited is made as thin as possible, but a thickness of about 10 μm is extremely difficult to handle and requires a lot of effort in various vapor deposition operations. and mounting work, especially the substrate thin film 2 on the support bases 1, 1.
It is extremely difficult to adhere to the infrared detection element 9, which causes a decrease in yield in manufacturing the infrared detection element 9.

発明の目的 本発明は、熱電堆型赤外検出素子を製造する上
での歩留りの向上を図ることができ、量産化,低
価格化を可能にした製造方法を提供せんとするも
のである。
OBJECTS OF THE INVENTION The present invention aims to provide a manufacturing method that can improve the yield in manufacturing a thermopile-type infrared detection element, and enables mass production and cost reduction.

発明の構成 本発明は、中間が座ぐりされその中央部が視野
制限窓として開口された開口部を有する金属板の
座ぐり部の周辺に基板薄膜を接着し、次にその基
板薄膜の前記金属板の反対側の面に二種類の金属
薄層を交互にその両端が重積し直列に配置される
ように蒸着し且つその金属薄層の直列に配置され
た二種類の金属薄層の末端に信号取出電極を蒸着
し、 最後に前記金属板の開口部である視野制限窓を
蒸着マスクパターンとして、前記基板薄膜の感温
接合部の反対面に当該視野制限窓と幾何学的に合
同となる赤外吸収層を、当該金属板に当接しない
ように、蒸着することを特徴とするものである。
Structure of the Invention The present invention involves bonding a substrate thin film to the periphery of a counterbore portion of a metal plate having a counterbore in the middle and an opening in the central portion as a view-limiting window, and then Two types of metal thin layers are alternately deposited on the opposite side of the plate so that their ends are stacked and arranged in series, and the ends of the two types of metal thin layers are arranged in series. A signal extraction electrode is deposited on the metal plate, and finally, using the field-of-view limiting window, which is the opening of the metal plate, as a deposition mask pattern, a field-limiting window that is geometrically congruent with the field-of-view limiting window is formed on the opposite side of the temperature-sensitive junction of the substrate thin film. This method is characterized in that the infrared absorbing layer is vapor-deposited so as not to come into contact with the metal plate.

実施例の説明 本発明による熱電堆型赤外検出素子の製造方法
の実施例を第2図a,bによつて説明する。先ず
中間部が前後両端部を残して座ぐりされて厚さ
0.1mmになされ、さらにその中央部が開口された
厚さ0.2mmの銅板よりなる金属板10の座ぐり部
11の左右両側部に架渡して厚さ10μmのカプト
ンフイルムよりなる基板薄膜22を接着する。前
記金属板10はフオトマスクを用いて、エツチン
グ法により容易に製作できるものである。前記基
板薄膜2を接着する接着剤は二液混合型のエポキ
シ樹脂系を用い、300℃にて固化させる。次に第
2図aに示されるようなパターンの蒸着マスクを
金属薄膜2の前記金属板10とは反対側の面に順
次セツトして、ビスマス,アンチモン,金の順で
蒸着して、二種類のビスマス,アンチモンの金属
薄層3,4を交互に配してその両端を重積接合し
て直列に配置し、且つその金属薄層3,4の末端
に金の信号取出電極8を配置する。ビスマス,ア
ンチモンは約200℃に昇温して蒸着する。前記二
種類の金属薄層3,4の重積接合部は、一つおき
に感温接合部5と基準接合部6とに分離配置され
る。最後に基板薄膜2上の感温接合部5群の反対
側の面に金属板10の開口部12(形成後に赤外
吸収層7の視野制限窓となる)を蒸着マスクパタ
ーンとして、同一面積で同一位置、すなわち開口
部12と赤外吸収層7の双方が幾何学的に合同の
関係になるように金黒を蒸着して、赤外吸収層7
を配置する。
DESCRIPTION OF EMBODIMENTS An embodiment of the method for manufacturing a thermopile type infrared detection element according to the present invention will be described with reference to FIGS. 2a and 2b. First, the middle part is counter-bored leaving both the front and rear ends to reduce the thickness.
A substrate thin film 22 made of Kapton film 10 μm thick is bonded over the left and right sides of the counterbore 11 of a metal plate 10 made of a 0.2 mm thick copper plate with a thickness of 0.1 mm and an opening in the center. do. The metal plate 10 can be easily manufactured by etching using a photomask. The adhesive for bonding the substrate thin film 2 is a two-component epoxy resin system, and is solidified at 300°C. Next, a vapor deposition mask having a pattern as shown in FIG. Thin metal layers 3 and 4 of bismuth and antimony are arranged alternately, and their ends are stacked and joined in series, and a signal extraction electrode 8 of gold is arranged at the end of the thin metal layers 3 and 4. . Bismuth and antimony are deposited by raising the temperature to approximately 200℃. The stacked joints of the two types of metal thin layers 3 and 4 are separated into temperature-sensitive joints 5 and reference joints 6 every other time. Finally, on the opposite side of the group of temperature-sensitive junctions 5 on the substrate thin film 2, the openings 12 of the metal plate 10 (which will become the view-limiting windows of the infrared absorbing layer 7 after formation) are formed as a vapor deposition mask pattern in the same area. The infrared absorbing layer 7 is formed by depositing gold black at the same position, that is, so that both the opening 12 and the infrared absorbing layer 7 are in a geometrically congruent relationship.
Place.

このようにして製造した熱電堆型赤外検出素子
は、その後信号取出電極8に直径30μmの微細金
線をドータイトで接着し、支持台1,1を介して
パツケージに固定する。その後、微細金線をパツ
ケージの端子にドータイトで接着して、赤外線透
過板であるゲルマニウム窓板をパツケージに気密
に接着し、排気銅パイプから真空排気して、真空
封止する。かくして、熱電堆型赤外検出器が完成
する。
The thermopile-type infrared detecting element thus manufactured is then fixed to a package via support stands 1, 1 by bonding a fine gold wire with a diameter of 30 μm to the signal extraction electrode 8 with dotite. Thereafter, a fine gold wire is bonded to the terminal of the package with dotite, a germanium window plate, which is an infrared transmitting plate, is hermetically bonded to the package, and the package is vacuum-sealed by evacuation through an exhaust copper pipe. In this way, a thermopile type infrared detector is completed.

発明の効果 以上詳記した通り本発明の熱電堆型赤外検出素
子の製造方法によれば、基板薄膜を、中間を座ぐ
りしその中央部を開口した金属板に接着した状態
で、該基板薄膜に二種類の金属薄層,信号取出電
極を蒸着マスクを用いて容易に蒸着して配置で
き、また金属板の開口部から開口部を蒸着マスク
パターンとして基板薄膜に赤外吸収層を同一面積
で同一位置、すなわち双方が幾何学的に合同の関
係にに蒸着して配置できるので、寸法精度の高い
赤外吸収層を容易に得ることができる。このよう
に基板薄膜を金属板に接着した状態で、全ての蒸
着作業を行うことがきるので、歩留りが良くな
り、しかも比較的時間のかかかる蒸着工程が金属
板への基板薄膜の接着後となつたので、接着失敗
によつて蒸着作業が無効になるということが無く
なり、歩留向上と共に無効作業時間を大巾に削減
できた。実際に熱電堆型赤外検出素子の製造にお
いて、従来は無効作業が50%であつたものが、本
発明では5%と1/10以下に低下した。
Effects of the Invention As detailed above, according to the method for manufacturing a thermopile-type infrared detection element of the present invention, a substrate thin film is bonded to a metal plate with a counterbore in the middle and an opening in the center. Two types of metal thin layers and signal extraction electrodes can be easily deposited and placed on a thin film using a deposition mask, and the infrared absorbing layer can be placed on the substrate thin film with the same area by using the openings of the metal plate as a deposition mask pattern. Since both can be deposited and arranged in the same position, that is, in a geometrically congruent relationship, an infrared absorbing layer with high dimensional accuracy can be easily obtained. In this way, all the deposition work can be performed with the substrate thin film bonded to the metal plate, improving yields and eliminating the relatively time-consuming evaporation process after the substrate thin film is bonded to the metal plate. As a result, the vapor deposition work is no longer invalidated due to adhesion failure, and it is possible to improve the yield and significantly reduce the time required for invalid work. In fact, in the production of thermopile-type infrared detection elements, the conventional method involved 50% of ineffective work, but with the present invention, this has been reduced to 5%, less than 1/10.

また、かかる方法により製造された熱電堆型赤
外検出素子は、赤外吸収層以外へ赤外光が照射
(あるいは迷光)されることにより生じる測定誤
差を一掃することができる。
Furthermore, the thermopile-type infrared detection element manufactured by such a method can eliminate measurement errors caused by irradiation of infrared light (or stray light) onto areas other than the infrared absorption layer.

すなわち、本願発明では、金属板は基板薄膜
(赤外吸収層)の周辺が座ぐられて当該基板薄膜
(赤外吸収層)に接触しないようになされた上で、
さらにその赤外吸収層の形状、大きさを視野制限
窓と幾何学的合同となるようにしているため、視
野制限窓を通過する赤外光は全て赤外吸収層のみ
に吸収され、迷光もなく、「赤外吸収層以外の周
辺に吸収されて、当該赤外光による信号(誤差)
が発生する」というようなことを防止することが
できる。
That is, in the present invention, the metal plate is ground around the substrate thin film (infrared absorbing layer) so as not to come into contact with the substrate thin film (infrared absorbing layer), and then
Furthermore, the shape and size of the infrared absorbing layer are geometrically congruent with the viewing window, so all infrared light passing through the viewing window is absorbed only by the infrared absorbing layer, eliminating stray light. "The signal (error) caused by the infrared light is absorbed by the surrounding area other than the infrared absorption layer.
can be prevented from occurring.

このように本願発明は、製造時には金属板の開
口部を赤外吸収層の蒸着マスクパターンとすると
ともに、当該開口部を製造後、赤外吸収層の視野
制限窓として活用したものである。
As described above, in the present invention, the openings in the metal plate are used as vapor deposition mask patterns for the infrared absorbing layer during manufacturing, and the openings are utilized as viewing-limiting windows for the infrared absorbing layer after manufacturing.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の熱電堆型赤外検出素子の断面
図、第2図a,bは本発明の製造法により製造さ
れた熱電堆型赤外検出素子を示し、同図aは平面
図、同図bは同図aのA−A断面図である。 1……支持台、2……基板薄膜、3,4……金
属薄層、5……感温接合部、6……基準接合部、
7……赤外吸収層、8……信号取出電極、9′…
…本発明の製造方法により作られた熱電堆型赤外
検出素子、10……金属板、11……座ぐり、1
2……開口部。
FIG. 1 is a sectional view of a conventional thermopile-type infrared detection element, FIGS. 2a and 2b show a thermopile-type infrared detection element manufactured by the manufacturing method of the present invention, and FIG. Figure b is a sectional view taken along line AA in figure a. DESCRIPTION OF SYMBOLS 1... Support stand, 2... Substrate thin film, 3, 4... Metal thin layer, 5... Temperature sensitive junction, 6... Reference junction,
7... Infrared absorbing layer, 8... Signal extraction electrode, 9'...
...Thermopile-type infrared detection element manufactured by the manufacturing method of the present invention, 10... Metal plate, 11... Counterbore, 1
2...Opening.

Claims (1)

【特許請求の範囲】 1 中間が座ぐりされその中央部が視野制限窓と
して開口された開口部を有する金属板の座ぐり部
の周辺に基板薄膜を接着し、次にその基板薄膜の
前記金属板の反対側の面に二種類の金属薄層を交
互にその両端が重積し直列に配置されるように蒸
着し且つその金属薄層の直列に配置された二種類
の金属薄層の末端に信号取出電極を蒸着し、 最後に前記金属板の開口部である視野制限窓を
蒸着マスクパターンとして、前記基板薄膜の感温
接合部の反対面に当該視野制限窓と幾何学的に合
同となる赤外吸収層を、当該金属板に当接しない
ように、蒸着することを特徴とする熱電堆型赤外
検出素子の製造方法。
[Scope of Claims] 1. A substrate thin film is bonded around the counterbore portion of a metal plate having an opening with a counterbore in the middle and a view-limiting window in the center, and then the metal of the substrate thin film is bonded. Two types of metal thin layers are alternately deposited on the opposite side of the plate so that their ends are stacked and arranged in series, and the ends of the two types of metal thin layers are arranged in series. A signal extraction electrode is deposited on the metal plate, and finally, using the field-of-view limiting window, which is the opening of the metal plate, as a deposition mask pattern, a field-limiting window that is geometrically congruent with the field-of-view limiting window is formed on the opposite side of the temperature-sensitive junction of the substrate thin film. 1. A method of manufacturing a thermopile type infrared detection element, comprising depositing an infrared absorbing layer such that the infrared absorbing layer does not come into contact with the metal plate.
JP59200016A 1984-09-25 1984-09-25 Manufacturing method of thermopile type infrared detection element Granted JPS6177729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59200016A JPS6177729A (en) 1984-09-25 1984-09-25 Manufacturing method of thermopile type infrared detection element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59200016A JPS6177729A (en) 1984-09-25 1984-09-25 Manufacturing method of thermopile type infrared detection element

Publications (2)

Publication Number Publication Date
JPS6177729A JPS6177729A (en) 1986-04-21
JPH0462014B2 true JPH0462014B2 (en) 1992-10-02

Family

ID=16417397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59200016A Granted JPS6177729A (en) 1984-09-25 1984-09-25 Manufacturing method of thermopile type infrared detection element

Country Status (1)

Country Link
JP (1) JPS6177729A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2594474B2 (en) * 1990-07-19 1997-03-26 アンリツ株式会社 UV sensor
JP6591315B2 (en) * 2016-03-09 2019-10-16 ルネサスエレクトロニクス株式会社 Semiconductor device, charge pump circuit, semiconductor system, vehicle, and control method of semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120767A (en) * 1975-04-16 1976-10-22 Yoshio Furusawa Stas type film thermocouple radiation detictor and its manufacturing m ethod
JPS52134786A (en) * 1976-05-06 1977-11-11 Fuji Electric Co Ltd Radiation detector
JPS5739338U (en) * 1980-08-14 1982-03-03

Also Published As

Publication number Publication date
JPS6177729A (en) 1986-04-21

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