JPH0463006B2 - - Google Patents
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- JPH0463006B2 JPH0463006B2 JP60020677A JP2067785A JPH0463006B2 JP H0463006 B2 JPH0463006 B2 JP H0463006B2 JP 60020677 A JP60020677 A JP 60020677A JP 2067785 A JP2067785 A JP 2067785A JP H0463006 B2 JPH0463006 B2 JP H0463006B2
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- carbon
- silica
- silicon nitride
- silicon carbide
- powder
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Description
【発明の詳細な説明】
産業上の利用分野
本発明は窒化けい素・炭化けい素の複合焼結体
の原料粉末として好適な窒化けい素と炭化けい素
の混合微粉末の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing a fine mixed powder of silicon nitride and silicon carbide suitable as a raw material powder for a composite sintered body of silicon nitride and silicon carbide.
炭化けい素焼結体は強度が大きく、熱伝導率も
大きいが、焼結には2000℃以上の高温が必要であ
る。一方窒化けい素は1750℃以下の温度で焼結
し、焼結体の強度は大きいが、熱伝導率は炭化け
い素焼結体に比べて低い。本発明は高強度で熱伝
導率の高い窒化けい素・炭化けい素の焼結体が容
易に得られる窒化けい素と炭化けい素の均一で且
つ粒径1ミクロン以下の混合微粒子の製造法に関
する。 Silicon carbide sintered bodies have high strength and high thermal conductivity, but sintering requires high temperatures of over 2000°C. On the other hand, silicon nitride is sintered at a temperature of 1750°C or lower, and although the strength of the sintered body is high, its thermal conductivity is lower than that of silicon carbide sintered body. The present invention relates to a method for producing uniform fine particles of a mixture of silicon nitride and silicon carbide with a particle size of 1 micron or less, by which a sintered body of silicon nitride and silicon carbide with high strength and high thermal conductivity can be easily obtained. .
この混合微粉末から得られる焼結体は高温用熱
交換器や耐熱性半導体用基板に応用し得られる。 The sintered body obtained from this mixed fine powder can be applied to high-temperature heat exchangers and heat-resistant semiconductor substrates.
従来技術
従来の窒化けい素と炭化けい素の混合粉末の製
造法としては、次の方法が知られている。Prior Art The following method is known as a conventional method for producing a mixed powder of silicon nitride and silicon carbide.
(1) 粒径1ミクロン以下の窒化けい素と炭化けい
素を混合する方法。(1) A method of mixing silicon nitride and silicon carbide with a particle size of 1 micron or less.
(2) シリカとカーボンの混合物を窒素と一酸化炭
素の雰囲気で加熱する方法。(2) A method in which a mixture of silica and carbon is heated in an atmosphere of nitrogen and carbon monoxide.
しかし、前記(1)の方法によつて得られる混合粉
末は均一混合物が得難く、そのため焼結性が十分
でなく、ホツトプレスによつても高密度な焼結体
が得られない欠点があつた。また前記(2)の方法で
は、反応を完結するためには多量のカーボンを加
える必要があり、そのため混合粉末中に多量のカ
ーボンが残留する。このままのものでは焼結助剤
を加えても焼結しないので、空気中で加熱して過
剰のカーボンを除去する後処理が必要であり、操
作も煩雑となると共にコスト高となる欠点があつ
た。 However, the mixed powder obtained by the method (1) above has the drawback that it is difficult to obtain a homogeneous mixture, and therefore, the sinterability is insufficient, and a high-density sintered body cannot be obtained even by hot pressing. . Furthermore, in the method (2) above, it is necessary to add a large amount of carbon to complete the reaction, and therefore a large amount of carbon remains in the mixed powder. As it is, it will not sinter even if a sintering aid is added, so post-treatment is required to remove excess carbon by heating it in air, which has the disadvantage of making operations complicated and increasing costs. .
発明の目的
本発明は従来法の欠点をなくすべくなされたも
ので、その目的は粒径が1ミクロン以下の微粒子
が均一に混合され、かつ残留カーボンが1.5重量
%以下である窒化けい素と炭化けい素の混合微粉
末を容易にかつ安価に製造し得られる方法を提供
するにある。Purpose of the Invention The present invention was made in order to eliminate the drawbacks of the conventional method, and its purpose is to uniformly mix fine particles with a particle size of 1 micron or less, and silicon nitride and carbide with a residual carbon content of 1.5% by weight or less. It is an object of the present invention to provide a method for easily and inexpensively producing a mixed fine powder of silicon.
発明の構成
本発明者らは前記目的を達成せんと鋭意研究の
結果、
(1) カーボン粉末、好ましくは粒径0.1ミクロン
以下の微粉末を分散させたけい素アルコキシド
を加水分解してシリカとカーボンの混合粉末と
すると、0.1ミクロン以下の粒径のものが均一
に混合された高純度のシリカとカーボンの混合
物が容易に得られること。Structure of the Invention As a result of intensive research to achieve the above object, the present inventors found that: (1) silicon alkoxide in which carbon powder, preferably fine powder with a particle size of 0.1 micron or less, is dispersed is hydrolyzed to produce silica and carbon; A mixture of silica and carbon with a uniform particle size of 0.1 micron or less can be easily obtained.
すなわち、けい素アルコキシドは蒸留により
容易に高純度のものが得られ、またカーボンも
不純物の少ない微粉末が安価に得られるので高
純度のものとなる。また加水分解で生成する粒
径0.1ミクロン以下のシリカはカーボン上に析
出するのでシリカとカーボンは均一に混合され
た微粒子となる。 That is, silicon alkoxide can be easily obtained with high purity by distillation, and carbon can also be of high purity because fine powder with few impurities can be obtained at low cost. Furthermore, since silica with a particle size of 0.1 micron or less produced by hydrolysis is precipitated on carbon, silica and carbon become fine particles that are uniformly mixed.
(2) シリカとカーボンの混合微粉末を窒素気流中
次いでアルゴン気流中又はアルゴン気流中次い
で窒素気流で加熱すると、その雰囲気と加熱条
件を制御することにより、窒化けい素対炭化け
い素の重量比を19:1〜1:19の広い範囲の任
意の割合にすることができること。(2) When a fine mixed powder of silica and carbon is heated in a nitrogen stream and then in an argon stream, or in an argon stream and then in a nitrogen stream, the weight ratio of silicon nitride to silicon carbide is determined by controlling the atmosphere and heating conditions. can be adjusted to any ratio within a wide range of 19:1 to 1:19.
そして原料混合物が微細かつ均一混合物であ
るため、過剰なカーボンなしで反応が完結し得
られる。そのため、反応後残留するカーボンは
1.5重量%以下となり、除去する後処理を必要
としない。 Since the raw material mixture is a fine and homogeneous mixture, the reaction can be completed without excess carbon. Therefore, the carbon remaining after the reaction is
The amount is 1.5% by weight or less, and no post-treatment is required to remove it.
(3) 0.1ミクロン以下の微粒子の均一混合物であ
るため、1550℃以下の温度で反応を完結するこ
とができ、得られる微粉末の粒径も1ミクロン
以下の均一混合物となし得、焼結性が優れ、高
密度の焼結体となし得ることを究明し得た。こ
れらの知見に基いて本発明を完成した。(3) Since it is a homogeneous mixture of fine particles of 0.1 micron or less, the reaction can be completed at a temperature of 1550°C or less, and the resulting fine powder has a particle size of 1 micron or less, making it a uniform mixture, and has excellent sinterability. It has been found that a sintered body with excellent properties and high density can be obtained. The present invention was completed based on these findings.
本発明の要旨は、カーボン粉末を分散させたけ
い素アルコキシドを加水分解し、得られたシリカ
とカーボンの混合物を窒素気流中次いでアルゴン
気流中又はアルゴン気流中次いで窒素気流中で
1350〜1550℃で30分〜30時間加熱することを特徴
とする窒化けい素と炭化けい素の混合微粉末の製
造法にある。 The gist of the present invention is to hydrolyze silicon alkoxide in which carbon powder is dispersed, and to prepare the resulting mixture of silica and carbon in a nitrogen stream and then in an argon stream, or in an argon stream and then in a nitrogen stream.
A method for producing a mixed fine powder of silicon nitride and silicon carbide, which is characterized by heating at 1350 to 1550°C for 30 minutes to 30 hours.
原料のけい素アルコキシドとしては、けい酸メ
チル、けい酸エチル、けい酸プロピル、けい酸ブ
チル等が挙げられる。カーボン粉末としてはカー
ボンブラツクのような高純度なもので、粒径が
0.1ミクロン以下の微粒子であることが好ましい。
粒径が0.1ミクロンを超えると均一微細な混合物
が得難くなると共に、シリカとカーボンの反応を
完結するために計算量より多量のカーボンを必要
とする。その結果、生成した窒化けい素と炭化け
い素の混合物中に多量のカーボンが残留し、この
残留カーボンを除去することが必要となるので、
前記のような粒度のものであることが好ましい。 Examples of the raw material silicon alkoxide include methyl silicate, ethyl silicate, propyl silicate, and butyl silicate. The carbon powder is of high purity such as carbon black, and the particle size is
Fine particles of 0.1 micron or less are preferable.
If the particle size exceeds 0.1 micron, it becomes difficult to obtain a uniform and fine mixture, and a larger amount of carbon than calculated is required to complete the reaction between silica and carbon. As a result, a large amount of carbon remains in the resulting mixture of silicon nitride and silicon carbide, and it is necessary to remove this residual carbon.
Preferably, the particle size is as described above.
けい素アルコキシドとカーボンの比はモル比で
1対1.7〜2.8の範囲であることが適当である。け
い素アルコキシドは加水分解によりシリカとな
り、その収率は99.8%以上であるので、けい素ア
ルコキシドとカーボンの比はシリカとカーボンの
比となる。 The molar ratio of silicon alkoxide to carbon is suitably in the range of 1:1.7 to 2.8. Silicon alkoxide becomes silica by hydrolysis, and the yield is 99.8% or more, so the ratio of silicon alkoxide to carbon is the ratio of silica to carbon.
合成される粉末中の窒化けい素と炭化けい素の
割合は、(1)原料のけい素アルコキシドとカーボン
の比、(2)加熱の際に窒素気流次いでアルゴン気流
又はアルゴン気流次いで窒素気流を流す場合のそ
れぞれの雰囲気における加熱温度と時間によつて
変えることができ、窒化けい素対炭化けい素を19
対1〜1対19と広い範囲に制御し得られる。 The ratio of silicon nitride and silicon carbide in the powder to be synthesized is determined by (1) the ratio of silicon alkoxide and carbon as raw materials, and (2) the flow of a nitrogen gas flow followed by an argon gas flow or an argon gas flow followed by a nitrogen gas flow during heating. The heating temperature and time in each atmosphere can be varied in the case of silicon nitride vs. silicon carbide.
It can be controlled over a wide range of 1:1 to 1:19.
加水分解によつて得られたシリカとカーボンは
窒素と反応し窒化けい素を生成する。 The silica and carbon obtained by hydrolysis react with nitrogen to produce silicon nitride.
3SiO2+6C+2N2→Si3N4+6CO (1) 一方アルゴン雰囲気ではSiCを生成する。 3SiO 2 +6C+2N 2 →Si 3 N 4 +6CO (1) On the other hand, SiC is generated in an argon atmosphere.
SiO2+3C→SiC+2CO (2)
また、SiOガスを生成し、シリカが系外に飛散
する反応も平行して起る。 SiO 2 +3C→SiC+2CO (2) In addition, a reaction occurs in parallel that generates SiO gas and scatters silica out of the system.
SiO2+C→SiO+CO (3)
(3)の反応ではシリカとカーボンがモル比で1対
1で消費され失われる。 In the reaction SiO 2 +C→SiO+CO (3) (3), silica and carbon are consumed and lost in a 1:1 molar ratio.
(1)式の窒化けい素の生成反応ではシリカとカー
ボンがモル比で1対2の割合で消費され、(2)式の
炭化けい素の生成反応では、シリカとカーボンが
モル比で、1対3の割合で消費される。従つて、
残留カーボンの量を1.5重量%以下になるように、
窒化けい素と炭化けい素の比に対応したたシリカ
とカーボンの比に設定すればよく、前記したよう
にシリカ対カーボンはモル比で1対1.7〜2.8の範
囲で行う。合成粉末中の窒化けい素の割合を多く
する場合はカーボン量を少なくし、炭化けい素の
割合を多くする場合はカーボン量を多くする。カ
ーボン量がシリカ対カーボンがモル比で1対1.7
より少ないと反応が不十分となり原料のシリカが
残り、シリカ対カーボンがモル比で1対2.8より
多くなると反応は進むが過剰のカーボンが残る。 In the silicon nitride production reaction in equation (1), silica and carbon are consumed in a molar ratio of 1:2, and in the silicon carbide production reaction in equation (2), silica and carbon are consumed in a molar ratio of 1:1. consumed at a ratio of 3 to 3. Therefore,
To reduce the amount of residual carbon to 1.5% by weight or less,
The ratio of silica to carbon may be set to correspond to the ratio of silicon nitride to silicon carbide, and as described above, the molar ratio of silica to carbon is 1:1.7 to 2.8. When increasing the proportion of silicon nitride in the synthetic powder, the amount of carbon should be decreased, and when increasing the proportion of silicon carbide, the amount of carbon should be increased. The molar ratio of carbon to silica is 1:1.7.
If it is less, the reaction will be insufficient and raw material silica will remain; if the molar ratio of silica to carbon is more than 1:2.8, the reaction will proceed but excess carbon will remain.
所定の割合のカーボンをけい素アルコキシドに
分散させ、けい素アルコキシドの3〜4倍(重
量)の蒸留水を加え混合した後、これに塩酸、硝
酸等の酸あるいはアンモニア水等のアルカリ水溶
液を少量滴下し、約80℃で5時間加熱すると加水
分解が完結する。容器を10〜200Torrに減圧し、
50〜90℃に加熱することにより生成したアルコー
ルと水を分離し、乾燥した窒化シリカとカーボン
の混合微粉末が得られる。この粉末は粒径0.1ミ
クロン以下の微粒子が均一に分散されたもので、
X線的には非晶質である。 Disperse carbon in a predetermined proportion in silicon alkoxide, add and mix 3 to 4 times (weight) of distilled water as the silicon alkoxide, and then add a small amount of acid such as hydrochloric acid or nitric acid or alkaline aqueous solution such as aqueous ammonia to this. Hydrolysis is completed by dropping the solution and heating at about 80°C for 5 hours. Depressurize the container to 10-200 Torr,
By heating to 50 to 90°C, the alcohol and water produced are separated, and a dried fine mixed powder of silica nitride and carbon is obtained. This powder is made up of uniformly dispersed fine particles with a particle size of 0.1 microns or less.
It is amorphous in terms of X-rays.
得られた混合物を必要に応じ成型した後、窒素
気流中次いでアルゴン気流中又はアルゴン気流中
次いで窒素気流中で1350〜1550℃に加熱する。こ
れにより窒化けい素と炭化けい素の混合微粉末が
得られる。 After the resulting mixture is shaped as necessary, it is heated to 1350-1550° C. in a nitrogen stream and then in an argon stream, or in an argon stream and then in a nitrogen stream. As a result, a fine mixed powder of silicon nitride and silicon carbide is obtained.
窒素とアルゴンガスを交互に流す場合、窒素ガ
ス中で加熱して窒化けい素を合成した後、アルゴ
ンガス中で加熱して炭化けい素を合成するか、あ
るいはその反対の順序のいずれかで行う。アルゴ
ンガスまたは窒素ガス中での加熱において、加熱
温度が高く、加熱時間が長い程、それぞれ炭化け
い素または窒化けい素の割合が高くなる。 When nitrogen and argon gas are flowed alternately, heating in nitrogen gas to synthesize silicon nitride, followed by heating in argon gas to synthesize silicon carbide, or vice versa. . In heating in argon gas or nitrogen gas, the higher the heating temperature and the longer the heating time, the higher the proportion of silicon carbide or silicon nitride, respectively.
加熱温度は1350〜1550℃、加熱時間は混合ガス
中では30分〜20時間、窒素ガス次いでアルゴンガ
ス又はアルゴンガス次いで窒素ガスを流す場合は
合計で1〜30時間であることがよい。加熱温度が
1350℃より低いと反応が十分進行しなく、1550℃
を超えると前記反応式(3)の反応が活発となり飛散
するシリカ分が増加して合成粉末中の残留炭素の
制御が困難となる。残留カーボン量は1.5重量%
以下とすることが好ましい。 The heating temperature is preferably 1350 to 1550°C, and the heating time is preferably 30 minutes to 20 hours in a mixed gas, or 1 to 30 hours in total when flowing nitrogen gas and then argon gas, or argon gas and then nitrogen gas. heating temperature
If the temperature is lower than 1350℃, the reaction will not proceed sufficiently;
If it exceeds this value, the reaction of reaction formula (3) becomes active and the amount of scattered silica increases, making it difficult to control residual carbon in the synthetic powder. Residual carbon amount is 1.5% by weight
The following is preferable.
窒化けい素対炭化けい素が重量比で1対19〜19
対1の割合のものは、窒化けい素と同様に焼結助
剤の使用により常圧焼結が可能であり、それより
炭化けい素が多いとホツトプレスを用い高温高圧
下で焼結することが必要となる。 Silicon nitride to silicon carbide weight ratio: 1:19 to 19
If the ratio is 1:1, it is possible to sinter under normal pressure by using a sintering aid, similar to silicon nitride, and if the ratio is higher than that, it is possible to sinter at high temperature and pressure using a hot press. It becomes necessary.
実施例 1
けい酸プロピル132gに平均粒径0.07ミクロン
のカーボンブラツク12gを入れ、超音波振動を加
えて分散させた。これに蒸留水280c.c.、アンモニ
ア水(50%)35c.c.を滴下し、2時間混合した。次
いで混合液を80℃で5時間加熱して加水分解させ
シリカとカーボンの混合物沈澱を得た。この容器
を100トールに減圧し、90℃まで加熱して水およ
び加水分解で生成したアルコールを除去し、これ
を100℃で5時間乾燥してシリカとカーボンの均
一混合物を得た。混合物1gを内径12mmの金型で
300Kg/cm2に加圧して円板状のペレツトとした。
これをアルゴン中で1450℃で1時間加熱した後、
引続いて窒素雰囲気中で1500℃で7時間加熱し
た。得られた粉末は窒化けい素85重量%、炭化け
い素15重量%のものであり、平均粒径は0.5ミク
ロンで、灰色、残留カーボン量は0.2重量%であ
つた。Example 1 12 g of carbon black having an average particle size of 0.07 microns was added to 132 g of propyl silicate and dispersed by applying ultrasonic vibration. 280 c.c. of distilled water and 35 c.c. of aqueous ammonia (50%) were added dropwise to this and mixed for 2 hours. Next, the mixed solution was heated at 80° C. for 5 hours to cause hydrolysis, and a mixture of silica and carbon was precipitated. The container was evacuated to 100 torr and heated to 90°C to remove water and alcohol produced by hydrolysis, and dried at 100°C for 5 hours to obtain a homogeneous mixture of silica and carbon. 1g of the mixture in a mold with an inner diameter of 12mm
It was pressurized to 300 kg/cm 2 to form disc-shaped pellets.
After heating this at 1450℃ for 1 hour in argon,
Subsequently, it was heated at 1500° C. for 7 hours in a nitrogen atmosphere. The obtained powder contained 85% by weight of silicon nitride and 15% by weight of silicon carbide, had an average particle size of 0.5 microns, was gray in color, and had a residual carbon content of 0.2% by weight.
この粉末に5重量%のY2O3を加えて炭化けい
素製ボールミルを用いヘキサン中で2時間混合し
た。混合物を乾燥後、内径16mmの金型で300Kg/
cm2に加圧し円板状となし、さらにラバープレスで
2ton/cm2で加圧した。この成形体をBN焼結体で
作つたろつぼに入れ、窒化けい素粉末で覆い、5
気圧の窒素雰囲気中で1750℃に1時間加熱して焼
結した。焼結体の密度は3.15g/cm3(気孔率3.2
%)であり、レーザーフラツシユ法で測定したこ
の焼結体の室温における熱伝導率は37W/m・K
であり、窒化けい素焼結体の32W/m・Kより高
かつた。 5% by weight of Y 2 O 3 was added to this powder and mixed for 2 hours in hexane using a silicon carbide ball mill. After drying the mixture, 300Kg/in a mold with an inner diameter of 16mm
Press to a size of cm 2 to form a disk shape, and then use a rubber press to form a disc.
Pressure was applied at 2 tons/cm 2 . This molded body was placed in a crucible made of BN sintered body, covered with silicon nitride powder,
Sintering was carried out by heating at 1750° C. for 1 hour in a nitrogen atmosphere at atmospheric pressure. The density of the sintered body is 3.15g/cm 3 (porosity 3.2
%), and the thermal conductivity of this sintered body at room temperature measured by the laser flash method is 37 W/m・K.
This was higher than the 32 W/m·K of silicon nitride sintered body.
実施例 2
けい酸エチル104gにカーボンブラツク18gを
分散し、実施例1と同様にしてシリカとカーボン
の混合粉末を得、ペレツトを作つた。これを窒素
雰囲気中で1450℃で2時間加熱し、引続きアルゴ
ンガス中で1500℃で6時間加熱して窒化けい素と
炭化けい素の混合粉末を得た。得られた混合粉末
は、窒化けい素60重量%、炭化けい素40重量%で
あり、平均粒径は0.9ミクロンで、黒色、残留カ
ーボンは0.7重量%であつた。Example 2 18 g of carbon black was dispersed in 104 g of ethyl silicate, a mixed powder of silica and carbon was obtained in the same manner as in Example 1, and pellets were made. This was heated at 1450°C for 2 hours in a nitrogen atmosphere, and then heated at 1500°C for 6 hours in an argon gas atmosphere to obtain a mixed powder of silicon nitride and silicon carbide. The resulting mixed powder contained 60% by weight of silicon nitride and 40% by weight of silicon carbide, had an average particle size of 0.9 microns, was black, and contained 0.7% by weight of residual carbon.
この粉末に5重量%のMgOを加えて実施例1
と同様にして混合した。この混合物1.5gをBN粉
末を内面に塗布した直径15mmの黒鉛型に入れ、窒
素気流中で200Kg/cm2の圧力下、1750℃で1時間
加熱し焼結体を作つた。焼結体の密度は3.25g/
cm3(気孔率0.4%)であり、室温における熱伝導
率は51W/m・Kであつた。 Example 1: 5% by weight of MgO was added to this powder.
Mixed in the same manner. 1.5 g of this mixture was placed in a graphite mold with a diameter of 15 mm whose inner surface was coated with BN powder, and heated at 1750° C. for 1 hour under a pressure of 200 kg/cm 2 in a nitrogen stream to form a sintered body. The density of the sintered body is 3.25g/
cm 3 (porosity: 0.4%), and thermal conductivity at room temperature was 51 W/m·K.
比較例 1
平均粒径0.08ミクロンのシリカ粉末30gに平均
粒径0.07ミクロンのカーボンブラツク17gを炭化
けい素製ボールミルを用いてヘキサン中で2時間
混合した。(シリカとカーボンのモル比は実施例
1と同じ)。該混合物を乾燥した後実施例1と同
様にして窒化けい素と炭化けい素の混合粉末を作
つた。得られた粉末は窒化けい素60重量%、炭化
けい素34重量%からなり、平均粒径は1.2ミクロ
ンで、黒色、残留カーボンは3.6重量%であつた。
この混合粉末を実施例1と同様にして成形焼結し
た。焼結体の密度は2.84g/cm3(気孔率12.1%)
であり、室温における熱伝導率は12W/m・Kで
あつた。密度、熱伝導率はいずれも窒化けい素焼
結体よりも低く、混合粉末としての特性は得られ
なかつた。Comparative Example 1 30 g of silica powder with an average particle size of 0.08 microns and 17 g of carbon black with an average particle size of 0.07 microns were mixed in hexane for 2 hours using a silicon carbide ball mill. (The molar ratio of silica and carbon is the same as in Example 1). After drying the mixture, a mixed powder of silicon nitride and silicon carbide was prepared in the same manner as in Example 1. The resulting powder consisted of 60% by weight of silicon nitride and 34% by weight of silicon carbide, had an average particle size of 1.2 microns, was black, and contained 3.6% by weight of residual carbon.
This mixed powder was shaped and sintered in the same manner as in Example 1. The density of the sintered body is 2.84g/cm 3 (porosity 12.1%)
The thermal conductivity at room temperature was 12 W/m·K. Both density and thermal conductivity were lower than that of silicon nitride sintered body, and the properties as a mixed powder could not be obtained.
比較例 2
平均粒径0.7ミクロンの窒化けい素粉末と平均
粒径0.5ミクロンの炭化けい素粉末を重量比で60
対40に混合した。(窒化けい素と炭化けい素の重
量比は実施例2で作つたものと同じである。)こ
の混合物に5重量%のMgOを加え、炭化けい素
製ボールミルを用い、ヘキサン中で2時間混合し
た。混合物を乾燥した後実施例2と同様にして焼
結体を作つた。焼結体の密度は2.93g/cm3(気孔
率10.1%)であり、室温における熱伝導率は
25W/m・Kであつた。実施例2におけるものと
比較して、密度ならびに熱伝導率が共に低いこと
が分かる。Comparative Example 2 Silicon nitride powder with an average particle size of 0.7 microns and silicon carbide powder with an average particle size of 0.5 microns in a weight ratio of 60
Mixed to 40%. (The weight ratio of silicon nitride and silicon carbide is the same as that made in Example 2.) Add 5% by weight of MgO to this mixture and mix for 2 hours in hexane using a silicon carbide ball mill. did. After drying the mixture, a sintered body was produced in the same manner as in Example 2. The density of the sintered body is 2.93g/cm 3 (porosity 10.1%), and the thermal conductivity at room temperature is
It was 25W/m・K. It can be seen that both the density and thermal conductivity are lower than those in Example 2.
発明の効果
本発明の方法によると、カーボン粉末を分散さ
せたけい素アルコキシドを加水分解することによ
り、粒径0.1ミクロン以下の微粒子で均一混合さ
れたシリカとカーボンの混合物が得られる。この
混合物を窒素気流中次いでアルゴン気流中又はア
ルゴン気流中次いで窒素気流中で1350〜1550℃に
加熱することにより、窒化けい素と炭化けい素の
混合粉末で残留カーボンが1.5重量%以下で、平
均粒径が1ミクロンのものが容易に得られ、しか
も、窒化けい素と炭化けい素の混合比が重量比で
19:1〜1:19の広い範囲に制御が可能である。
また得られる混合物は低温で緻密な焼結体とする
ことができ、その焼結体の熱伝導率は窒化けい素
焼結体よりも高いものである等の優れた効果を有
する。Effects of the Invention According to the method of the present invention, by hydrolyzing silicon alkoxide in which carbon powder is dispersed, a mixture of silica and carbon in which fine particles having a particle size of 0.1 micron or less are uniformly mixed can be obtained. By heating this mixture to 1350 to 1550°C in a nitrogen stream, then in an argon stream, or in an argon stream and then in a nitrogen stream, a mixed powder of silicon nitride and silicon carbide with residual carbon of 1.5% by weight or less and an average Particles with a particle size of 1 micron can be easily obtained, and the mixing ratio of silicon nitride and silicon carbide is low in weight ratio.
Control is possible over a wide range of 19:1 to 1:19.
Furthermore, the resulting mixture has excellent effects such as being able to form a dense sintered body at low temperatures, and the thermal conductivity of the sintered body being higher than that of silicon nitride sintered bodies.
Claims (1)
ドを加水分解し、得られたシリカとカーボンの混
合物を窒素気流中次いでアルゴン気流中又はアル
ゴン気流中次いで窒素気流中で1350〜1550℃で30
分〜30時間加熱することを特徴とする窒化けい素
と炭化けい素の混合微粉末の製造法。 2 シリカとカーボンの混合物をアルゴン気流中
で1350〜1550℃に1分〜10時間加熱後、窒素気流
中で1400〜1550℃に1〜20時間加熱する特許請求
の範囲第1項記載の窒化けい素と炭化けい素の混
合微粉末の製造法。 3 シリカとカーボンの混合物を窒素気流中で
1350〜1550℃に1分〜10時間加熱後、アルゴン気
流中で1400〜1550℃に1〜20時間加熱する特許請
求の範囲第1項記載の窒化けい素と炭化けい素の
混合微粉末の製造法。 4 けい素アルコキシドの加水分解によつて生成
するシリカとカーボンの割合がモル比で1対1.7
〜2.8の範囲である特許請求の範囲第1項、第2
項または第3項記載の窒化けい素と炭化けい素の
混合微粉末の製造法。[Claims] 1 Hydrolyze silicon alkoxide in which carbon powder is dispersed, and heat the resulting mixture of silica and carbon in a nitrogen stream and then in an argon stream, or in an argon stream and then in a nitrogen stream at 1350 to 1550°C. at 30
A method for producing a fine mixed powder of silicon nitride and silicon carbide, characterized by heating for minutes to 30 hours. 2. Silicon nitride according to claim 1, wherein a mixture of silica and carbon is heated to 1350 to 1550°C for 1 minute to 10 hours in an argon stream, and then heated to 1400 to 1550°C for 1 to 20 hours in a nitrogen stream. A method for producing a fine mixed powder of silicon carbide and silicon carbide. 3 A mixture of silica and carbon in a nitrogen stream
Production of a fine mixed powder of silicon nitride and silicon carbide according to claim 1, which is heated to 1350 to 1550°C for 1 minute to 10 hours, and then heated to 1400 to 1550°C for 1 to 20 hours in an argon stream. Law. 4 The molar ratio of silica and carbon produced by hydrolysis of silicon alkoxide is 1:1.7.
Claims 1 and 2 falling within the scope of ~2.8
A method for producing a mixed fine powder of silicon nitride and silicon carbide according to item 1 or 3.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60020677A JPS61183107A (en) | 1985-02-05 | 1985-02-05 | Manufacturing method of mixed fine powder of silicon nitride and silicon carbide |
| US06/788,577 US4643859A (en) | 1985-01-26 | 1985-10-17 | Process for the production of fine non-oxide powders from alkoxides |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60020677A JPS61183107A (en) | 1985-02-05 | 1985-02-05 | Manufacturing method of mixed fine powder of silicon nitride and silicon carbide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61183107A JPS61183107A (en) | 1986-08-15 |
| JPH0463006B2 true JPH0463006B2 (en) | 1992-10-08 |
Family
ID=12033814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60020677A Granted JPS61183107A (en) | 1985-01-26 | 1985-02-05 | Manufacturing method of mixed fine powder of silicon nitride and silicon carbide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183107A (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54139619A (en) * | 1978-04-21 | 1979-10-30 | Tokyo Shibaura Electric Co | Manufacture of highly pure ceramic powder |
| JPS5742517A (en) * | 1980-08-27 | 1982-03-10 | Sumitomo Electric Ind Ltd | Preparation of silicon nitride powder |
| JPS5891058A (en) * | 1981-11-24 | 1983-05-30 | 旭硝子株式会社 | Manufacture of mixture of silicon nitride and silicon carbide |
-
1985
- 1985-02-05 JP JP60020677A patent/JPS61183107A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61183107A (en) | 1986-08-15 |
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