JPH0463464A - Semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor device having an externally insulated flat semiconductor element in a press-contact structure.

[Prior Art 1] Conventionally, there has been a semiconductor device of this type as shown in FIG.

In FIG. 2, 1 is a heat dissipation fin, 2 is a flat semiconductor element, and 3 is a heat dissipation block that holds the semiconductor element 2 in pressure contact.
is tightened to press the semiconductor element 2 into contact with the semiconductor element 2. 6 is a spring, 7 is an insulating bush, and 8 is an insulating plate. These are housed in a case 9, and further housed in grooves 1b of a predetermined depth of the radiation fins 1. 1Q is busba. Reference numeral 11 denotes a minute gap formed between the insulating plate 8 and the inner wall of the radiation fin 1.

Next, the operation will be explained.

Since the semiconductor element 2 needs to be pressed together, the spring 6 is usually attached to the bolt 4. Natsu 5. It is used by tightening with the heat radiation block 3. In addition, since the semiconductor element 2 generates a large amount of heat when it is energized, it is necessary to provide a mechanism to dissipate this heat into the outside air. The heat is released from this insulating plate 8 to the outside air through the radiation fins 1.In addition, for safe handling, a case 9, which is an electrical insulator, is used to prevent the bus bar 10, which communicates with the cathode and anode of the semiconductor element 2, from being connected. The structure is electrically isolated from the outside.

[Problems to be Solved by the Invention] The externally insulated semiconductor device described above is configured as described above, but due to variations in the thickness of the semiconductor element 2 and variations in the thickness of the heat dissipation block 3, the heat dissipation fin 1 When the heat dissipation block 3 with the semiconductor element 2 pressed into contact with the provided base 1b is installed, the inner wall of the base 1b and the heat dissipation block 3. A minute gap 11 was formed between the insulating plates 8, which resulted in poor heat conduction, insufficient heat radiation, and an increase in temperature, which prevented the semiconductor element 2 from fully demonstrating its characteristics.

This invention was made to solve the above-mentioned problems, and has a structure in which the heat dissipation block is completely attached to the groove provided in the heat dissipation fin, thereby dramatically improving heat dissipation efficiency. The purpose is to obtain a semiconductor device.

[Means to solve the problem]

In the semiconductor device according to the present invention, the heat dissipation fin is provided with a groove having a V-shaped cross section that becomes narrower as it gets deeper, and the heat dissipation block that presses the semiconductor element from both sides is provided with the groove of the seven-shaped groove. By forming the same inclination as the inclination, when the two are assembled with an insulating plate interposed therebetween, the configuration is such that they always come into close contact with the inner wall of the 7-shaped groove.

[Function] In this invention, the heat dissipation block, insulating plate, and heat dissipation fin are configured to be in close contact with the inner wall of the figure-7 groove, so that the heat generated during the operation of the semiconductor element is quickly dissipated into the outside air. be done.

[Example] An embodiment of the present invention will be described below with reference to FIG.

In FIG. 1, 1 is a heat radiation fin, and 1a is a groove formed in the heat radiation fin 1. The groove 1a is formed in a V-shaped cross section that becomes narrower as the depth increases. Further, the heat dissipation block 3 is formed on the outside with an inclination equal to the inclination of the figure 7 shape 1a provided on the heat dissipation fins 1. The rest of the configuration is the same as that shown in FIG. 2.

Next, the operation will be explained.

The assembly in which the semiconductor element 2 and the heat dissipation block 3 are tightened by the port 4 and the nut 5 via the spring 6 is the semiconductor element 2.
and has a variation corresponding to the variation in the thickness of the heat dissipation block 3.

However, since the 7-shaped groove 1a provided in the heat dissipation fin 1 has a taper similar to that of the heat dissipation block 3, it shifts upward when the thickness of the assembly is large, and downward when the thickness is small. Therefore, the heat radiation block 3 and the inner wall of the groove 1a of the heat radiation fin 1 are always in complete contact with the insulating plate 8 interposed therebetween.

Therefore, the heat generated during the operation of the semiconductor element 2 is efficiently transmitted from the heat radiation block 3 to the heat radiation fin 1 through the insulating plate 8, and is radiated into the outside air.

In addition, although the case where the number of the semiconductor elements 2 is one was shown in the said Example, it is possible to have two or more (The same effect as the said Example is produced).

[Advantageous Effects of the Invention 1] As explained above, in the present invention, the grooves provided in the heat dissipation fins are formed in a cross-sectional shape that becomes narrower as the depth becomes deeper, and the grooves are also formed in the heat dissipation block. Since the slope is the same as that of the 7-shaped groove, when the semiconductor element and the heat dissipation block are combined, even if there are slight variations in dimensions, the 7-shaped groove will always be formed through the insulating plate with good thermal conductivity. Closely adheres to the inner wall surface of the Therefore, there is an effect that good heat dissipation can always be realized and a semiconductor device can be obtained that can fully exhibit the characteristics of the semiconductor element.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor device. In the figure, 1 is a heat radiation fin, 1a is a groove, 2 is a semiconductor element, 3 is a heat radiation block, 4 is a bolt, 5 is a nut, 6 is a spring, 7 is an insulating bushing, 8 is an insulating plate, 9 is a case, 1
o is busba. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Claims] In an externally insulated semiconductor device in which a flat semiconductor element is held and held under pressure by a heat radiation block in a groove provided in a heat radiation fin, the groove provided in the radiation fin becomes narrower as the depth thereof becomes deeper. The cross-sectional shape is V
The heat dissipation block also has the V shape.
A semiconductor device characterized by forming an inclination that is the same as that of a letter-shaped groove.