JPH0465344A - Production of oxide superconductor - Google Patents
Production of oxide superconductorInfo
- Publication number
- JPH0465344A JPH0465344A JP2176868A JP17686890A JPH0465344A JP H0465344 A JPH0465344 A JP H0465344A JP 2176868 A JP2176868 A JP 2176868A JP 17686890 A JP17686890 A JP 17686890A JP H0465344 A JPH0465344 A JP H0465344A
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- Prior art keywords
- phase
- powder
- sintered
- low
- composition
- Prior art date
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は、Bi Pb 5r−Ca−Cu−0系
酸化物超伝導体、具体的にはPbを含むBi zsrz
ca、Cu:+ Oy系、即ち(Bi、 Pb) 2
(Sr、 Pb) zcazcus Oyで表されるB
i系酸化物超伝導体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a Bi Pb 5r-Ca-Cu-0 based oxide superconductor, specifically a Bi zsrz containing Pb.
ca, Cu: + Oy system, i.e. (Bi, Pb) 2
(Sr, Pb) B represented by zcazcus Oy
The present invention relates to a method for producing an i-based oxide superconductor.
(従来の技術)
Bi −Pb−5r−Ca−Cu−0系酸化物超伝導体
には、臨界温度(Tc)が高い相((Bi、Pb)z(
Sr、Pb)zcalcu*o、、これを(2223)
相という〕と、Tcの低い相((Bi、Pb)z(Sr
、Pb)zCa+CuzOx−これを(2212)相と
いう〕とがあって、高Tc用は液体窒素温度(77K)
よりも31.にも高い108にで抵抗が0Ωとなる。一
方、低Tc相では抵抗が0Ωになるのは80にである。(Prior art) Bi-Pb-5r-Ca-Cu-0 based oxide superconductor has a phase ((Bi, Pb)z(
Sr, Pb) zcalcu*o,, this (2223)
phase] and the low Tc phase ((Bi,Pb)z(Sr
, Pb)zCa+CuzOx - This is called the (2212) phase], and for high Tc, liquid nitrogen temperature (77K)
31. At a high value of 108, the resistance becomes 0Ω. On the other hand, in the low Tc phase, the resistance becomes 0Ω at 80Ω.
従って、高Tc用と低Tc相の混合比によって臨界温度
は変化し前者が多いほど臨界温度は高くなる。Therefore, the critical temperature changes depending on the mixing ratio of the high Tc phase and the low Tc phase, and the more the former is present, the higher the critical temperature becomes.
高Tc用の比率が高いもの、例えば、体積比で95%以
上のものが得られれば、これをリング状などの焼結体と
して永久磁石として実用化できる。If a material with a high ratio for high Tc, for example, a material with a volume ratio of 95% or more, can be obtained, it can be put to practical use as a ring-shaped sintered body as a permanent magnet.
従来のBi −Pb−5r−Ca−Cu −0系酸化物
超伝導体の製造法は次のようなものである。即ち、まず
ai、o、、Pbo、CaC0,,5rCO+、Cu2
Oの各粉末(本発明では、これらを「酸化物系原料粉末
]という)をBi:Pb:Sr:Ca:Cu=0.8:
0.2:0.8:1.0:1.4の割合で配合し、粉砕
助剤としてアセトンを添加して混合する。混合した粉末
を大気中で約800°C110時間程度の条件で焼成し
、得られた粉末をさらに粉砕する。この粉末を5000
kg/cm”程度の圧力でペレットに成形し、さらに8
50〜875°C,,10〜50時間大気中で焼結する
。 (例えば、Japanese Journal o
fApplied Physics、νol 28.
N(112,1989,PP、L2182L2184参
照)
(発明が解決しようとする課題)
前記の従来法で焼結したB1−Pb−5r−Ca−Cu
−0系超伝導体では、高Tc用の割合は最大でも体積
比で80%前後であり、抵抗の温度変化を調べると10
4に前後でしか0Ωとならず、超伝導遷移幅が広い。こ
の原因は高Tc用が十分に成長していないことによると
思われる。A conventional method for producing a Bi-Pb-5r-Ca-Cu-0 based oxide superconductor is as follows. That is, first ai, o,, Pbo, CaC0,,5rCO+, Cu2
Each powder of O (in the present invention, these are referred to as "oxide-based raw material powder") is Bi:Pb:Sr:Ca:Cu=0.8:
They are blended in a ratio of 0.2:0.8:1.0:1.4, and acetone is added as a grinding aid and mixed. The mixed powder is fired in the atmosphere at about 800° C. for about 110 hours, and the obtained powder is further pulverized. 5000 yen of this powder
It is molded into pellets at a pressure of about 8 kg/cm" and further
Sinter in air at 50-875°C for 10-50 hours. (For example, Japanese Journal
fApplied Physics, νol 28.
N (see 112, 1989, PP, L2182L2184) (Problem to be solved by the invention) B1-Pb-5r-Ca-Cu sintered by the above conventional method
In -0 series superconductors, the proportion for high Tc is around 80% by volume at most, and when examining temperature changes in resistance, the ratio for high Tc is around 80%.
It becomes 0Ω only around 4, and the superconducting transition width is wide. The reason for this is thought to be that the high Tc grains have not grown sufficiently.
本発明の目的は、高Tc用の比率が高く、臨界温度の高
いBi Pb 5r−Ca−Cu−0系超伝導体を
製造する方法を提供することにある。An object of the present invention is to provide a method for producing a BiPb 5r-Ca-Cu-0 superconductor having a high ratio for high Tc and a high critical temperature.
(i1題杏解決するための手段)
Bi−Pb−5r−Ca−Cu −0系酸化物超伝導体
において、高Tc用が体積比で95%以上にならない原
因は、高Tc用の生成温度範囲が狭いこと、およびその
生成に異方性があるため薄い板状になり、未反応物が多
く残ることにあると考えられる。(Means for solving problem i1) In the Bi-Pb-5r-Ca-Cu -0 based oxide superconductor, the reason why the volume ratio of high Tc does not exceed 95% is due to the formation temperature of high Tc. This is thought to be because the range is narrow and the production is anisotropic, resulting in a thin plate shape and a large amount of unreacted substances remaining.
通常の方法で作製した試料のミグ0組織を観察すると、
CazCuOff、CazPbOa、CuOなどの未反
応物の大きい粒子が残っている。仮焼粉や種々の温度で
焼成した試料を調べた結果、仮焼粉中には大きい粒子の
未反応物はなく焼結中に成長して大きくなったものであ
ることがわかった。しかし、最初から高Tc用の組成比
に配合した原料を未反応相の粒成長が生じないような低
温で焼結しても高Tc用は生成しない。一方、低温焼結
した試料を分析して見たところ、高Tc用は低Tc相(
2212)系とCazCuOz、CatPbOa、Cu
Oなどが反応して生成することが判明した。When observing the MIG0 structure of a sample prepared using a conventional method,
Large particles of unreacted substances such as CazCuOff, CazPbOa, and CuO remain. As a result of examining the calcined powder and samples fired at various temperatures, it was found that there were no unreacted large particles in the calcined powder, but particles that grew and became larger during sintering. However, even if raw materials that have been blended at a composition ratio for high Tc from the beginning are sintered at a low temperature that does not cause grain growth of the unreacted phase, high Tc will not be produced. On the other hand, analysis of low-temperature sintered samples revealed that high Tc phase is low Tc phase (
2212) system and CazCuOz, CatPbOa, Cu
It was found that O etc. were generated by reaction.
そこで、まず低Tc相の組成となるように配合した原料
を比較的高温で焼結し粉砕し、得られた低Tc相の粉末
に残余の原料(低Tc相の組成を補って、高Tc用を生
成させるように配合された原料)を混合して、比較的低
温で焼結すれば、高Tc用が高い比率で生成するものと
予想される。Therefore, first, the raw materials blended to have a low Tc phase composition are sintered and pulverized at a relatively high temperature, and the remaining raw material (complemented with the low Tc phase composition) is added to the obtained low Tc phase powder to create a high Tc phase powder. It is expected that a high proportion of high Tc products will be produced if the raw materials (raw materials formulated to produce a high Tc content) are mixed and sintered at a relatively low temperature.
上記のような調査結果に基づいてなされた本発明は、下
記の工程を特徴とする高Tc用の比率の高い超伝導体の
製造方法を要旨とする。The present invention, which was made based on the above research results, is directed to a method for producing a high-ratio superconductor for high Tc, which is characterized by the following steps.
■ BizO,、Pbo、CaC01,5rC(h、C
uO等の酸化物系原料粉末を、(2212)相の組成と
なるように配合し焼結して、低Tc相、即ち(2212
)系の酸化物粉末(これを第1の粉末とする)を作る。■ BizO,, Pbo, CaC01,5rC (h, C
Oxide-based raw material powders such as uO are mixed and sintered to have a (2212) phase composition to form a low Tc phase, that is, a (2212) phase.
) system oxide powder (this will be used as the first powder) is made.
■ 別に上記の酸化物系原料粉末を、上記の第1の粉末
と配合されて高Tc用、即ち、(2223)の組成とな
るように配合して焼成し、粉末(これを第2の粉末とす
る)を作る。■ Separately, the above-mentioned oxide-based raw material powder is blended with the above-mentioned first powder so as to have a composition for high Tc, that is, (2223), and fired. ).
■ 第1の粉末と第2の粉末を混合して成形し、前記■
の焼結温度よりも低い温度で焼結する。■ The first powder and the second powder are mixed and molded, and the
Sinter at a temperature lower than the sintering temperature of
以上の工程で、高Tc用の比率の高い超伝導体が効率的
に得られる。Through the above steps, a high ratio superconductor for high Tc can be efficiently obtained.
第1図は、本発明方法を説明する工程概略図である0図
示のとおり、本発明方法は、第1の粉末(低Tc相の粉
末)と、第2の粉末とを別々に製造するのが大きな特徴
である。FIG. 1 is a process schematic diagram illustrating the method of the present invention. As shown in the figure, the method of the present invention involves manufacturing the first powder (low Tc phase powder) and the second powder separately. is a major feature.
第1図の工程における(a)の焼成および(C)の成形
は必須ではないが、原料に炭酸塩を使うこと、および合
成に4元素系という多成分を使用するため反応性を高め
る必要があること、等からこれらの工程も実施するのが
望ましい。その焼成温度は、700〜800°Cとする
のがよい。(C)の成形と(d)の焼結によって反応性
に冨む低Tc相が生成する。(C)および(d)の成形
と焼結は、間に粉砕工程を挟んで2回以上繰り返しても
よい。Although the firing in (a) and the molding in (C) in the process shown in Figure 1 are not essential, it is necessary to increase the reactivity because carbonate is used as a raw material and a multi-component of four elements is used in the synthesis. It is desirable to carry out these steps as well. The firing temperature is preferably 700 to 800°C. A highly reactive low Tc phase is produced by the molding in (C) and the sintering in (d). The molding and sintering in (C) and (d) may be repeated two or more times with a pulverization step in between.
(b)の焼成は、750〜850’Cで行うのが望まし
い。The firing in (b) is preferably carried out at 750 to 850'C.
150’Cより低いと炭酸塩が分解しにくく、また85
0°Cより高温では粒子が粗大化して後の粉砕混合が困
難になる。If the temperature is lower than 150'C, carbonate will be difficult to decompose, and 85
At temperatures higher than 0°C, the particles become coarse and subsequent pulverization and mixing becomes difficult.
上記の工程でそれぞれ別々に製造した粉末を、例えば1
: 0.192 (IEI比)の割合で混合する。For example, the powders produced separately in the above steps are
: Mix at a ratio of 0.192 (IEI ratio).
そうすると高Tc用(2223)の組成比になる。この
混合粉を成形しく(e)の工程)、次いで焼結を行う(
(f)の工程)。This results in a composition ratio for high Tc (2223). This mixed powder is shaped (step (e)) and then sintered (
Step (f)).
(f)の焼結は830〜840’Cで行う。従来法で最
も多く (2223)相が生成する845°Cでの焼結
ではCazCu03などを含む第2の粉末中の化合物が
粗大化する。Sintering in (f) is performed at 830-840'C. When sintering at 845°C, where the most (2223) phase is produced in the conventional method, the compounds in the second powder containing CazCu03 etc. become coarse.
(作用)
酸化物系原料粉末を最初から(2223)相となる組成
比に配合して焼成する通常の焼結法においては、焼成粉
中に生成している低Tc相が焼結過程で残りの成分(未
反応成分)と反応して亮Tc相となる。(Function) In the normal sintering method in which oxide-based raw material powder is blended in a composition ratio that forms the (2223) phase from the beginning and then fired, the low Tc phase generated in the fired powder remains during the sintering process. (unreacted components) to form a light Tc phase.
しかし、通常の焼結温度では、未反応成分からなる化合
物は粒成長し、低Tc相と反応する機会が減少する。こ
れが高Tc相が生成しにくくなる原因である。However, at normal sintering temperatures, compounds consisting of unreacted components undergo grain growth, reducing the chance of reacting with the low Tc phase. This is the reason why the high Tc phase is difficult to generate.
ところが、低Tc相を予め前記の温度で焼成しておくと
低Tc相が反応しやすくなる。そこでこの低Tc相に残
余の成分を混合し、通常の温度よりも低い温度で焼結す
ると、残余成分からなる化合物の粒成長が抑えられ、高
Tc相が生成しやすくなる。However, if the low Tc phase is fired at the above temperature in advance, the low Tc phase will react more easily. Therefore, when the remaining components are mixed with this low Tc phase and sintered at a temperature lower than the normal temperature, grain growth of the compound consisting of the remaining components is suppressed and the high Tc phase is easily generated.
以下、従来法(比較例)と本発明の実施例とを示して、
本発明の効果を具体的に説明する。Below, a conventional method (comparative example) and an example of the present invention are shown,
The effects of the present invention will be specifically explained.
[比較例・・・従来法]
8i、、 、+Pbo、 axsr+、 7+caz、
+1Cux0,0)Mi成となるようにBi2O3、
PbO,、SrCO3、CaC0z、CuO粉末を配合
して混合した。配合比を第1表に示す。この混合粉末を
大気中800’Cで24時間焼成した。この焼成粉を1
5mmφX1mmtに圧縮成形し、845°cテ96時
間焼結した。高Tc相の生成量はX線回折の結果、60
体積%前後であった。この試料の抵抗−温度特性を4端
子虫で測定した結果、104にで0Ωになることがわか
った。[Comparative example...conventional method] 8i, , +Pbo, axsr+, 7+caz,
+1Cux0,0)Bi2O3, so that Mi becomes
PbO, SrCO3, CaC0z, and CuO powders were blended and mixed. The blending ratio is shown in Table 1. This mixed powder was fired at 800'C in the air for 24 hours. 1 of this baked powder
It was compression molded to a size of 5 mmφ x 1 mmt and sintered at 845°C for 96 hours. As a result of X-ray diffraction, the amount of high Tc phase produced was 60
It was around % by volume. As a result of measuring the resistance-temperature characteristics of this sample using a four-terminal insect, it was found that the resistance was 0Ω at 104.
〔実施例1〕
■第1の粉末の作製:
BizOz、Pbo、5rCO+、 CaCO3、Cu
O粉末を第1表に示すように
Bi+、t+Pbo、iSr+、sCa+、5Cu20
y (&[l成I)となるように混合し、800 ’C
で24時間焼成した後、粉砕し、15mmφX1mmt
に成形して第2表に示すように810〜860°Cの種
々の温度で24時間焼結して粉砕した。こうして得た第
1の粉末はほぼ全体が低Tc相であった。[Example 1] ■Preparation of first powder: BizOz, Pbo, 5rCO+, CaCO3, Cu
As shown in Table 1, O powder is Bi+, t+Pbo, iSr+, sCa+, 5Cu20
y (&[l composition I) and heated at 800'C.
After baking for 24 hours, it is crushed into 15mmφX1mmt
The samples were molded, sintered at various temperatures from 810 to 860°C for 24 hours, and pulverized as shown in Table 2. The first powder thus obtained was almost entirely a low Tc phase.
■第2の粉末の作製:
上記の原料粉末を第1表に示すように
Pbo、 +1Sro、 z+cao、 hacu+
Oy (!成2)となるように混合し、800°Cで2
4時間焼成し粉砕して第2粉末を作製した。この粉末は
CazPbO,、CazCuO=、CuOの混合物であ
った。■Preparation of second powder: As shown in Table 1, the above raw material powder was converted into Pbo, +1Sro, z+cao, hacu+
Mix it so that it becomes Oy (!2) and heat it at 800°C.
A second powder was produced by firing for 4 hours and pulverizing. This powder was a mixture of CazPbO, CazCuO=, and CuO.
第 2 表
■焼結体の製造
上記によって得た第1粉末と第2粉末を1:0.192
の重量比でよく混合した後、15mmφX1mmLに成
形し、835°C×96時間の焼結を行った。Table 2 ■ Production of sintered body The first powder obtained above and the second powder were mixed at a ratio of 1:0.192.
After mixing well at a weight ratio of , the mixture was molded into a size of 15 mm in diameter and 1 mm in length, and sintered at 835°C for 96 hours.
この焼結体の高Tc相の比率と臨界温度を調査した結果
を第2表に示す。Table 2 shows the results of investigating the high Tc phase ratio and critical temperature of this sintered body.
第2表から、低Tc相(!Ji成1)の焼結温度を84
0〜860°Cとした系では高Tc相が90%以上とな
り、Tcは106にとなることがわかる。From Table 2, the sintering temperature of the low Tc phase (!Ji formation 1) is 84
It can be seen that in the system at 0 to 860°C, the high Tc phase is 90% or more, and the Tc is 106.
(以下余白)
第3表
[実施例2]
実施例1と同じ組成で第1粉末を845°C×24時間
焼結した粉末を用い、実施例1と同様、第2粉末と混合
し成形した後、第3表に示す830〜850’Cの種々
の温度で96時間焼結した。この焼結体の高Tc相の比
率と臨界温度を調査した結果を第3表に示す。この結果
、830°C〜840°Cで焼成した試料ではTc =
IO2にとなり、この物質の理想的臨界温度になるこ
とがわかった。(Margins below) Table 3 [Example 2] Using a powder obtained by sintering the first powder at 845°C for 24 hours with the same composition as in Example 1, it was mixed with the second powder and molded in the same manner as in Example 1. After that, sintering was carried out for 96 hours at various temperatures from 830 to 850'C as shown in Table 3. Table 3 shows the results of investigating the high Tc phase ratio and critical temperature of this sintered body. As a result, for samples fired at 830°C to 840°C, Tc =
IO2, which was found to be the ideal critical temperature for this material.
第2図は、比較例と、実施例1のNo、 3および実施
例2のNα3の焼結体の温度−電気抵抗曲線である。比
較例の臨界温度は104にであるのに対して、実施例の
臨界温度は106にと107にである。この差は一見わ
ずかであるが、第2図に示すように曲線のパターンの違
いがあり、この差が電気的特性に顕著な影響を及ぼす。FIG. 2 is a temperature-electrical resistance curve of the comparative example, No. 3 of Example 1, and Nα3 of Example 2. The critical temperature of the comparative example is 104, while the critical temperature of the example is 106 and 107. Although this difference seems slight at first glance, there is a difference in the curve pattern as shown in FIG. 2, and this difference has a significant effect on the electrical characteristics.
比較例のように臨界温度が低く、曲線の立ち上がりが鈍
いのは、電流の経路に理想的な超伝導相以外の相が含ま
れていることを裏付けている。The fact that the critical temperature is low and the rise of the curve is slow as in the comparative example confirms that the current path includes a phase other than the ideal superconducting phase.
(発明の効果)
本発明方法によれば、裔Tc相の比率が高く、臨界温度
の高い超伝導体が得られる。本発明方法は、永久磁石の
ような各種のBi系酸化物超伝導体の製造に広く応用で
きる。(Effects of the Invention) According to the method of the present invention, a superconductor having a high proportion of Tc phase and a high critical temperature can be obtained. The method of the present invention can be widely applied to the production of various Bi-based oxide superconductors such as permanent magnets.
第1図は、本発明方法の工程の概略図である。
第2図は、本発明方法および従来方法で製造した超伝導
焼結体の温度−電気抵抗曲線である。FIG. 1 is a schematic diagram of the steps of the method of the invention. FIG. 2 shows temperature-electrical resistance curves of superconducting sintered bodies produced by the method of the present invention and the conventional method.
Claims (1)
a_lCu_2O_x系の相の組成となるように配合し
て焼結し粉砕した第1の粉末と、同じく酸化物系原料粉
末を、上記の臨界温度が低い相の組成を補って臨界温度
の高いBi_2Sr_2Ca_2Cu_3O_y系の相
の組成となるように配合して焼成した第2の粉末とを別
々に作製し、これらの粉末を混合して成形し、前記臨界
温度が低い相の焼結温度よりも低い温度で焼結すること
を特徴とするPbを含むBi系酸化物超伝導体の製造方
法。Oxide-based raw material powder is Bi_2Sr_2C with low critical temperature.
The first powder, which is blended, sintered and crushed to have a phase composition of a_lCu_2O_x system, and the same oxide-based raw material powder are used to supplement the composition of the phase with a low critical temperature to form a Bi_2Sr_2Ca_2Cu_3O_y system with a high critical temperature. A second powder is prepared separately, which is mixed and fired to have a phase composition of A method for producing a Bi-based oxide superconductor containing Pb, characterized in that the Pb-containing Bi-based oxide superconductor
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2176868A JPH0465344A (en) | 1990-07-03 | 1990-07-03 | Production of oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2176868A JPH0465344A (en) | 1990-07-03 | 1990-07-03 | Production of oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0465344A true JPH0465344A (en) | 1992-03-02 |
Family
ID=16021209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2176868A Pending JPH0465344A (en) | 1990-07-03 | 1990-07-03 | Production of oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0465344A (en) |
-
1990
- 1990-07-03 JP JP2176868A patent/JPH0465344A/en active Pending
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