JPH0465444B2 - - Google Patents

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Publication number
JPH0465444B2
JPH0465444B2 JP57204532A JP20453282A JPH0465444B2 JP H0465444 B2 JPH0465444 B2 JP H0465444B2 JP 57204532 A JP57204532 A JP 57204532A JP 20453282 A JP20453282 A JP 20453282A JP H0465444 B2 JPH0465444 B2 JP H0465444B2
Authority
JP
Japan
Prior art keywords
film
sendust
magnetic
thickness
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57204532A
Other languages
Japanese (ja)
Other versions
JPS5996519A (en
Inventor
Hideo Zama
Hiroaki Ono
Norio Goto
Kanji Kawano
Toshimitsu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20453282A priority Critical patent/JPS5996519A/en
Publication of JPS5996519A publication Critical patent/JPS5996519A/en
Publication of JPH0465444B2 publication Critical patent/JPH0465444B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109Details
    • G11B5/313Disposition of layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3103Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔発明の利用分野〕 本発明は、ビデオテープレコーダなどに好適な
薄膜磁気ヘツドに関する。 〔従来技術〕 近年、ビデオテープレコーダに用いられる磁気
テープとしてメタルテープが普及し、これととも
に、かかる磁気テープに適する磁気ヘツドとし
て、高飽和磁束密度のセンダスト膜をコア材とす
る薄膜磁気ヘツドが注目されており、従来のフエ
ライトヘツドに比べて優れた性能を有しているこ
とが確認されている。 かかる薄膜磁気ヘツドは、基本的には、2つの
非磁性基板間にセンダスト膜を挾み込んで構成さ
れるものであるが、磁気テープに形成すべき記録
トラツクの幅が比較的広いことおよびセンダスト
膜の膜厚がトラツク幅を決定するものであること
から、センダスト膜の膜厚を比較的大きくしなけ
ればならない。しかしながら、センダスト膜の抵
抗値は非常に小さく、その膜厚を大きくすると、
高周波での渦電流損失が著しく大きくなり、高周
波での再生効率が低下してしまうことになる。 そこで、かかる欠点を除去するために、非磁性
基板間でセンダスト膜と電気的絶縁性を有する非
磁性絶縁膜とを交互に複数積層し、多層構造にし
て所定のトラツク幅を得るように薄膜磁気ヘツド
のコア材を構成し、コア材の電気抵抗を増大させ
て高周波での渦電流損失を大幅に減少させるよう
にしている。 ところで、かかるセンダスト多層膜のコア材か
らなる薄膜磁気ヘツドにおいて、センダスト膜の
膜厚をほゞ6μmで、かつ、センダスト膜間の非
磁性絶縁膜の膜厚を0.5μmとすることが提案され
た(特開昭49−127195)。これは、上記のように、
センダスト膜と非磁性絶縁膜との夫々の膜厚を設
定すると、センダスト膜に対する飽和磁束密度
Bsと保磁力HcとのBs/Hcが最大となることによ
るものであるとしている。 しかしながら、上記従来の薄膜磁気ヘツドにお
いて、非磁性絶縁膜として、たとえば、SiO2
を用いた場合、センダスト膜とSiO2膜との間で
熱膨張係数αが異なるために、非磁性絶縁膜の膜
厚を上記のように0.5μmとすると、センダスト膜
に応力が加わつて磁気特性の劣化をきたすことに
なる。すなわち、センダスト膜のBs/Hcが最大
となるように、センダスト膜および非磁性絶縁膜
の膜厚を設定したとしても、非磁性絶縁膜の種類
や熱膨張係数α、熱処理などの影響を受け、良好
な磁気特性を有する薄膜磁気ヘツドを得ることが
できなかつた。 〔発明の目的〕 本発明の目的は、上記従来技術の欠点を除き、
センダスト膜間に設けられる非磁性絶縁膜に係わ
らず、対象とする周波帯域の全域にわたつて良好
な磁気特性を有する薄膜磁気ヘツドを提供するに
ある。 〔発明の概要〕 この目的を達成するために、本発明は、コア材
を形成するセンダスト膜の膜厚を1〜10μmと
し、かつ、同じく非磁性絶縁膜の膜厚を0.03μm
以上0.1μm未満とした点に特徴がある。 数10μmのトラツク幅のセンダスト膜による薄
膜磁気ヘツドを作成するにあたり、まず、センダ
ストはフエライトなどに比べて比抵抗が著しく小
さいために、渦電流損による高周波での初透磁率
の劣化があることを考慮する必要がある。これ
は、スキンデブスの式、すなわち、次式 但し、ρ:センダストの比抵抗(≒100μΩ−
cm) ω:周波数 μp:真空中の透磁率 μc:センダスト(コア)の透磁率 ts:膜厚 に、センダストの比抵抗ρと周波数ωとを代入す
ることにより見積ることができる。また、センダ
ストのコア材により薄膜磁気ヘツドを作成する際
には、熱処理などの工程を経ることから、応力に
よる磁気特性の劣化、すなわち、磁歪が生ずるこ
とも考慮する必要がある。 そこで、これらの点を考慮し、磁歪入を零とす
るようなセンダストの組成を選定し、スパツタリ
ングによりセンダスト膜を形成してその特性を調
べたところ、スキンデプスによる周波数特性の劣
化が表われるのは、大略13μm以上の膜厚である
ことがわかつた。そして、15μmの厚膜のセンダ
スト膜をSiO2膜を介して2層積層し、その磁気
特性を測定したところ、15μmの厚膜のセンダス
ト膜一層の磁気特性に比べ、特に、初透磁率が全
周波数帯域(〜10MHz)にわたつて約1/2以下と
なつた。また、次に、約8μmの膜厚の単層のセ
ンダスト膜を作成し、その磁気特性を調べたとこ
ろ、13μmの膜厚の単層のセンダスト膜に比べ、
全周波数帯域にわたつて平行移動的に初透磁率が
向上した。 一方、周波数が100KHz、4MHzであるときのコ
アの初透磁率μc1000,2000について、前記スキン
デプスの式から膜厚tsを計算すると、次のように
なる。
[Field of Application of the Invention] The present invention relates to a thin film magnetic head suitable for video tape recorders and the like. [Prior Art] In recent years, metal tapes have become popular as magnetic tapes used in video tape recorders, and with this, thin film magnetic heads whose core material is a sendust film with a high saturation magnetic flux density have attracted attention as a magnetic head suitable for such magnetic tapes. It has been confirmed that this head has superior performance compared to conventional ferrite heads. Such a thin film magnetic head is basically constructed by sandwiching a Sendust film between two non-magnetic substrates, but the width of the recording track to be formed on the magnetic tape is relatively wide, and the Sendust film is sandwiched between two non-magnetic substrates. Since the thickness of the film determines the track width, the thickness of the sendust film must be relatively large. However, the resistance value of the sendust film is very small, and when the film thickness is increased,
The eddy current loss at high frequencies becomes significantly large, and the regeneration efficiency at high frequencies decreases. Therefore, in order to eliminate such defects, a plurality of sendust films and electrically insulating nonmagnetic insulating films are alternately laminated between the nonmagnetic substrates, and a thin film magnetic film is created to form a multilayer structure and obtain a predetermined track width. It constitutes the core material of the head, and increases the electrical resistance of the core material to significantly reduce eddy current loss at high frequencies. By the way, in a thin film magnetic head made of the core material of such a Sendust multilayer film, it has been proposed that the thickness of the Sendust film be approximately 6 μm, and the thickness of the nonmagnetic insulating film between the Sendust films be 0.5 μm. (Japanese Patent Application Laid-Open No. 49-127195). This, as mentioned above,
By setting the respective film thicknesses of the Sendust film and the non-magnetic insulating film, the saturation magnetic flux density for the Sendust film
It is said that this is due to the fact that B s /H c between B s and coercive force H c becomes maximum. However, in the conventional thin film magnetic head described above, when a SiO 2 film is used as the nonmagnetic insulating film, the thermal expansion coefficient α is different between the sendust film and the SiO 2 film. If the film thickness is set to 0.5 μm as described above, stress will be applied to the sendust film, resulting in deterioration of the magnetic properties. In other words, even if the thickness of the Sendust film and non-magnetic insulating film is set so that the B s /H c of the Sendust film is maximized, the effects of the type of non-magnetic insulating film, coefficient of thermal expansion α, heat treatment, etc. Therefore, it has not been possible to obtain a thin film magnetic head with good magnetic properties. [Object of the invention] The object of the present invention is to eliminate the drawbacks of the above-mentioned prior art,
It is an object of the present invention to provide a thin film magnetic head that has good magnetic properties over the entire target frequency band regardless of the nonmagnetic insulating film provided between the sendust films. [Summary of the Invention] In order to achieve this object, the present invention sets the thickness of the sendust film forming the core material to 1 to 10 μm, and also sets the thickness of the nonmagnetic insulating film to 0.03 μm.
The feature is that the thickness is less than 0.1 μm. When creating a thin-film magnetic head using a sendust film with a track width of several tens of micrometers, we first considered that since sendust has a significantly lower resistivity than ferrite, the initial permeability deteriorates at high frequencies due to eddy current loss. need to be considered. This is the Skin Debs formula, i.e. However, ρ: Specific resistance of Sendust (≒100μΩ−
cm) ω: Frequency μ p : Magnetic permeability in vacuum μ c : Magnetic permeability of sendust (core) t s : Can be estimated by substituting the specific resistance ρ and frequency ω of sendust into the film thickness. Furthermore, when making a thin film magnetic head using the core material of Sendust, it is necessary to take into account that the magnetic properties deteriorate due to stress, that is, magnetostriction occurs, since it goes through processes such as heat treatment. Considering these points, we selected a composition of sendust that would make the magnetostriction zero, formed a sendust film by sputtering, and investigated its characteristics.We found that the frequency characteristics deteriorated due to skin depth. It was found that the film thickness was approximately 13 μm or more. Then, when we stacked two 15 μm thick Sendust films with a SiO 2 film in between and measured their magnetic properties, we found that the initial magnetic permeability was particularly low compared to the magnetic properties of a single layer of 15 μm thick Sendust films. It was approximately 1/2 or less across the frequency band (~10MHz). Next, we created a single-layer Sendust film with a thickness of about 8 μm and examined its magnetic properties, and found that compared to a single-layer Sendust film with a thickness of 13 μm,
The initial permeability improved in parallel over the entire frequency band. On the other hand, when the film thickness t s is calculated from the above skin depth formula for the core's initial magnetic permeability μ c 1000, 2000 when the frequencies are 100 KHz and 4 MHz, it is as follows.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を図面について説明す
る。 第2図は本発明による薄膜磁気ヘツドの一実施
例を示す正面図であつて、1,1′は非磁性基板、
2,2′,2″はセンダスト膜、3,3′は非磁性
絶縁膜、4は接着材、5はギヤツプスペーサ、
6,6′はコア半体である。 第2図は薄膜磁気ヘツドの磁気テープ摺動面を
示すものである。同図において、コア半体6,
6′は、非磁性基板1,1′間に非磁性絶縁膜3,
3′を介してセンダスト膜2,2′,2″が積層さ
れ、センダスト膜2″が接着材4によつて非磁性
絶縁膜1′に接着されて形成され、夫々のコア半
体6,6′がギヤツプスペーサ5を介して一体化
されて薄膜磁気ヘツドが形成されている。 非磁性基板1,1′は、たとえば、熱膨張係数
αが約140×10-7/degのMn−Niの酸化物からな
り、非磁性絶縁膜3,3′は、たとえば、SiO2
であり、また、接着材としては、たとえば、低融
点鉛系ガラスが用いられる。センダスト膜2から
センダスト膜2″までの全体の厚さが薄膜磁気ヘ
ツドのトラツク幅となり、ギヤツプスペーサ5に
より、トラツク幅に対して所定のアジマス角のヘ
ツドギヤツプが形成されている。 センダスト膜2,2′,2″と非磁性絶縁膜3,
3′との膜厚は、薄膜磁気ヘツドの全周波数帯域
における磁気特性が良好であるように設定され、
特に、非磁性絶縁膜3,3′の膜厚は、センダス
ト膜2,2′,2″間の膜はがれの防止の点からも
考慮して設定されるものであるが、以下、夫々の
膜厚について、第1図A,Bの実験結果も勘案し
て説明する。 まず、第2図の薄膜磁気ヘツドの製造について
説明する。 第3図AないしGは第2図の薄膜磁気ヘツドの
製造方法の一具体例を示す工程図であつて、7は
コア材であり、第2図に対応する部分には同一符
号をつけている。 まず、熱膨張係数αが約140×10-7/degのMn
−Ni酸化物からなる非磁性基板1,1′を作成し
(第3図A)、非磁性基板1上に、DC4極のスパツ
タリング装置により、3μm/時の速度でセンダ
ストを堆積して約8μmの膜厚のセンダスト膜2
を形成し、さらに、RFスパツタリング装置によ
り、SiO2をスパツタしてSiO2の非磁性絶縁膜3
を約700Åの膜厚に形成する(第3図B)。同様の
方法により、さらに、膜厚約8μmのセンダスト
膜2′,膜厚約700ÅのSiO2膜3′、膜厚約8μmの
センダスト膜2″を順次形成する(第3図C)。 しかる後、センダスト膜2″上に、RFスパツタ
リング装置により、1W/cm2のパワーで低融点鉛
系ガラスをスパツタし、約0.25μmの厚さの該低
融点鉛系ガラスからなる接着材4を形成し(第3
図D)、同様にして、他方の非磁性基板1′上に、
同様の接着材4を約0.25μmの厚さで形成する。
次に、このようにして得られた基板を、接着材4
が互いに当接するように突き合わせ、加重加熱し
てサンドイツチ状のコア体7を形成する(第3図
F)。なお、センダスト膜2,2,2″をスパツタ
して形成後、所望の磁気特性を出すために熱処理
アニールし、その後、接着材4をスパツタして非
磁性基板1′とセンダスト膜2″とを接着してもよ
いし、また、非磁性基板1′、センダスト膜2″の
いずれか一方のみに接着材4をスパツタし、コア
体7を形成するようにしてもよい。 次に、コア体7を所定のアジマス角を付して切
断し、コア半体6,6′を形成し、ヘツドギヤツ
プ面となる切断面を研磨ラツプしてギヤツプ突き
合わせ面を形成する。そして、夫々のギヤツプ突
き合わせ面を形成する。そして、夫々のギヤツプ
突き合わせ面に非磁性の、たとえば、SiO2から
なるギヤツプスペーサ材5をスパツタ(第3図
G)し、これらギヤツプスペーサ材5が当接する
ようにコア半体6,6′を突き合わせ、加重加熱
してボンデイングし、第2図に示す薄膜磁気ヘツ
ドが得られる。 このようにして薄膜磁気ヘツドが得られるもの
であるが、同様の製造方法により、第1図に示す
ように、センダスト膜1層当りの膜厚が異なるコ
ア体を作成し、夫々のコア体から薄膜磁気ヘツド
を作成して夫々のヘツド出力(自己録再出力)を
測定したところ、第4図に示されるような測定結
果を得た。 第4図では横軸に4MHzでの初透磁率センダス
ト膜1層当りの膜厚に対してとり、縦軸に4MHz
における再生出力をとつているが、この第4図か
ら明らかなように、初透磁率800〜1000あたりか
らヘツド出力は急激に上昇しており、このこと
は、第1図Aにおける初透磁率とセンダスト膜1
層当りの膜厚との関係と対応している。第4図で
は4MHzでのヘツド出力を示したが、1MHzでのヘ
ツド出力についても全く同じ傾向を示した。 なお、このときの出力測定条件は、薄膜磁気ヘ
ツドと磁気テープとの相対速度が4.1m/秒、ト
ラツク幅24μm、インダクタンス2μHとした。 このように、初透磁率が800前後以上で急激な
ヘツド出力の上昇がみられることになり、したが
つて、第1図Aからセンダスト膜1層当りの膜厚
は8〜10μmよりも薄くすることにより、大きな
ヘツド出力が得られることになる。なお、飽和磁
束密度Bs,保磁力Hcはセンダスト膜1層当りの
膜厚に対して一定であるから(第1図B)、これ
らを考慮する必要がない。 さて、次に、第3図A〜Gに示した製造方法に
より、膜厚4μmのセンダスト膜を6層積層し、
SiO2の非磁性絶縁膜の膜厚が0.01μm〜0.52μmの
範囲で異なる複数のコア体を作成し、夫々のコア
体から薄膜磁気ヘツドを作成した。そして、夫々
の薄膜磁気ヘツドについて、4MHzにおけるヘツ
ド出力とセンダスト膜の膜はがれ不良率を調べ
た。 この結果、第5図に示すように、非磁性絶縁膜
の膜厚が増加すると、ヘツド出力αは減少し、ま
た、膜はがれ不良率bも増加する。特に、ヘツド
出力は、非磁性絶縁膜の膜厚が1000Å以上になる
と、減少していくことがわかつた。この膜はがれ
不良率bはセンダスト膜と非磁性絶縁膜との熱膨
張係数αの差に影響され、非磁性絶縁膜がSiO2
の場合には上記のようであるが、SiO2より熱膨
張係数αが大きいアルミナの場合には、SiO2
場合よりも厚い膜厚で出力減少、膜はがれ不良率
が生ずる傾向がある。 また、SiO2による非磁性絶縁膜の場合、膜厚
が300Å近傍からヘツド出力の減少がみられ、膜
厚が約100Å近傍では約0.5dBの出力低下があつ
た。さらに、非磁性絶縁膜の膜厚を100Å以下に
して実験したところ、約50Åの膜厚の非磁性絶縁
膜の場合、1層当りの膜厚が4μmのセンダスト
多層膜では、必ずしも良好な磁気特性が得られる
ものではなかつた。これは、SiO2のピンホール
により、あるいは、必ずしも絶縁性が良好でなく
なることから、非磁性絶縁膜の効果が薄れたこと
によるものである。 したがつて、以上のことから、第2図の薄膜磁
気ヘツドの非磁性絶縁膜の膜厚は0.03μm以上
0.1μm未満の範囲内に設定する。 次に、本発明による薄膜磁気ヘツドの製造方法
の他の具体例について説明する。 Mn−Ni酸化物の非磁性基板上に、DC4極のス
パツタリング装置により、膜厚5μmのセンダス
ト膜を形成し、さらに、RFスパツタリング装置
により、アルミナをスパツタして膜厚1000Åの非
磁性絶縁膜を形成した。この工程を5回繰り返し
順次非磁性絶縁膜を介して膜厚5μmのセンダス
ト膜を5層形成した。 次に、このセンダスト多層膜基板を、真空度
10-2〜10-3Torrの炉内600℃で30分間のアニール
処理を行ない、さらに、センダスト膜上を軽くラ
ツプして洗浄し、鉛が約70〜80%含有した低融点
ガラスをセンダスト膜と他方のMn−Ni酸化物非
磁性基板上に0.25μmの厚さでスパツタする。こ
れら2つの基板は、低融点ガラス膜を互いに当接
させて突き合わせ、アニール条件と同一条件で加
重加熱し、センダスト膜をサンドイツチ状にラミ
ネートしてコア体を形成する。 次に、このコア体は所定のアジマス角を付して
切断し、2つのコア半体を得る。これらコア半体
の切断面は鏡面ラツプ仕上げしてヘツドギヤツプ
面とし、これらヘツドギヤツプ面に鉛系低融点ガ
ラスをRFスパツタリング装置によりスパツタし、
厚さ約0.15μmの接着材を形成する。そして、
夫々の接着材を互いに当接するように2つのコア
半体を突き合わせ、10-2〜10-3Torrの真空炉内
で上記ラミネート時よりも低い温度でボンデイン
グし、さらに所定の加工を経て薄膜磁気ヘツドが
作成される。 このようにして得られた薄膜磁気ヘツドにおい
ては、実効ギヤツプ長が約0.25〜0.3μmであり、
短波長記録を充分に満足するものである。 なお、以上の実施例および製造方法では、一方
の非磁性基板上にのみセンダスト膜を積層し、こ
れに他方の非磁性基板を接着する場合について説
明したが、双方の非磁性基板に夫々センダスト膜
を積層し、それらを互いに突き合わせてラミネー
トしてもよく、また、非磁性絶縁膜としては
SiO2.アルミナに限るものではない。 〔発明の効果〕 以上説明したように、本発明によれば、積層さ
れるセンダスト膜の1層当りの膜厚を1〜10μm
とし、該センダスト膜間の非磁性絶縁膜の膜厚を
0.03μm以上0.1μm未満とするものであるから、
飽和磁束密度および保磁力が変化することなく、
初透磁率が著しく増加して磁気特性が改善され、
ヘツド出力が著しく増大化して性能のバラツキも
ほとんどなく、さらに、性能の劣化をきたすこと
なく、膜はがれ不良を低減化することができ、製
造歩留りが大幅に向上して、上記記従来技術にな
い優れた機能を有する薄膜磁気ヘツドを提供する
ことができる。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is a front view showing an embodiment of the thin film magnetic head according to the present invention, in which 1 and 1' are nonmagnetic substrates,
2, 2', 2'' are sendust films, 3, 3' are non-magnetic insulating films, 4 is an adhesive, 5 is a gear spacer,
6 and 6' are core halves. FIG. 2 shows the magnetic tape sliding surface of the thin film magnetic head. In the figure, core halves 6,
6' is a non-magnetic insulating film 3, between the non-magnetic substrates 1, 1'.
The sendust films 2, 2', 2'' are laminated through the core halves 6, 6', and the sendust film 2'' is bonded to the non-magnetic insulating film 1' with the adhesive 4. ' are integrated via a gear spacer 5 to form a thin film magnetic head. The nonmagnetic substrates 1 and 1' are made of, for example, Mn-Ni oxide with a coefficient of thermal expansion α of about 140×10 -7 /deg, and the nonmagnetic insulating films 3 and 3' are made of, for example, a SiO 2 film. For example, low melting point lead glass is used as the adhesive. The total thickness from the sendust film 2 to the sendust film 2'' becomes the track width of the thin film magnetic head, and the gap spacer 5 forms a head gap having a predetermined azimuth angle with respect to the track width.Sendust films 2, 2' , 2″ and the nonmagnetic insulating film 3,
The film thickness with 3' is set so that the magnetic properties of the thin film magnetic head are good in the entire frequency band,
In particular, the thickness of the non-magnetic insulating films 3 and 3' is set taking into account the prevention of film peeling between the sendust films 2, 2' and 2''. The thickness will be explained taking into account the experimental results shown in Figures 1A and B. First, the manufacturing of the thin film magnetic head shown in Figure 2 will be explained. Figures 3 A to G show the manufacturing of the thin film magnetic head shown in Figure 2. In the process diagram showing a specific example of the method, 7 is a core material, and parts corresponding to those in Figure 2 are given the same reference numerals.First, the thermal expansion coefficient α is approximately 140 deg Mn
-Nonmagnetic substrates 1 and 1' made of Ni oxide were prepared (Fig. 3A), and sendust was deposited on the nonmagnetic substrate 1 at a rate of 3 μm/hour to a thickness of about 8 μm using a DC 4-pole sputtering device. Sendust film 2 with a film thickness of
Then, using an RF sputtering device, SiO 2 is sputtered to form a SiO 2 nonmagnetic insulating film 3.
is formed to a thickness of about 700 Å (Figure 3B). Using the same method, a sendust film 2' with a thickness of about 8 μm, a SiO 2 film 3' with a thickness of about 700 Å, and a sendust film 2'' with a thickness of about 8 μm are successively formed (FIG. 3C). On top of the sendust film 2'', a low melting point lead glass is sputtered using an RF sputtering device at a power of 1 W/cm 2 to form an adhesive material 4 made of the low melting point lead glass with a thickness of about 0.25 μm. (3rd
Figure D), similarly, on the other non-magnetic substrate 1',
A similar adhesive material 4 is formed to a thickness of about 0.25 μm.
Next, the substrate obtained in this way is attached to an adhesive 4.
are brought into contact with each other and heated under weight to form a sandwich-like core body 7 (FIG. 3F). After forming the sendust films 2, 2, 2'' by sputtering, heat treatment and annealing are performed to obtain the desired magnetic properties, and then the adhesive 4 is sputtered to bond the nonmagnetic substrate 1' and the sendust film 2''. The core body 7 may be formed by adhesion, or the adhesive material 4 may be sputtered on only one of the nonmagnetic substrate 1' and the sendust film 2'' to form the core body 7. is cut at a predetermined azimuth angle to form core halves 6, 6', and the cut surfaces that will become the head gap surfaces are polished and lapped to form gap abutting surfaces.Then, the respective gap abutting surfaces are formed. Then, sputter a non-magnetic gear spacer material 5 made of, for example, SiO 2 onto the abutting surfaces of each gear (FIG. 3G), and align the core halves 6, 6' so that the gear spacer materials 5 are in contact with each other. The thin film magnetic head shown in Fig. 2 is obtained by butting and bonding with weighted heating.The thin film magnetic head is obtained in this way, and by the same manufacturing method, as shown in Fig. 1, When core bodies with different film thicknesses per layer of sendust film were created and thin film magnetic heads were created from each core body and the output (self-recording/reproducing output) of each head was measured, the results were as shown in Figure 4. In Figure 4, the horizontal axis shows the initial permeability per layer of Sendust film at 4MHz, and the vertical axis shows the initial magnetic permeability at 4MHz.
As is clear from Fig. 4, the head output rapidly increases from around 800 to 1000, which is the same as the initial permeability in Fig. 1A. sendust film 1
This corresponds to the relationship with the film thickness per layer. Although Figure 4 shows the head output at 4MHz, the head output at 1MHz also showed exactly the same tendency. The output measurement conditions at this time were that the relative speed between the thin film magnetic head and the magnetic tape was 4.1 m/sec, the track width was 24 μm, and the inductance was 2 μH. In this way, when the initial magnetic permeability is around 800 or more, a rapid increase in head output is observed. Therefore, from Figure 1A, the film thickness per layer of sendust film should be made thinner than 8 to 10 μm. As a result, a large head output can be obtained. Incidentally, since the saturation magnetic flux density B s and the coercive force H c are constant with respect to the film thickness of one Sendust film (FIG. 1B), there is no need to take these into account. Next, by the manufacturing method shown in FIGS. 3A to 3G, six layers of Sendust films with a film thickness of 4 μm are laminated.
A plurality of core bodies having nonmagnetic insulating films of SiO 2 having different thicknesses in the range of 0.01 μm to 0.52 μm were prepared, and a thin film magnetic head was created from each core body. For each thin-film magnetic head, the head output at 4 MHz and the defective rate of Sendust film peeling were investigated. As a result, as shown in FIG. 5, as the thickness of the nonmagnetic insulating film increases, the head output α decreases and the defective rate b due to film peeling also increases. In particular, it was found that the head output decreased when the thickness of the nonmagnetic insulating film exceeded 1000 Å. This film peeling failure rate b is influenced by the difference in thermal expansion coefficient α between the Sendust film and the nonmagnetic insulating film, and the nonmagnetic insulating film is SiO 2
As mentioned above, in the case of alumina, which has a larger coefficient of thermal expansion α than SiO 2 , a thicker film tends to result in a decrease in output and a higher rate of defective films due to film peeling than in the case of SiO 2 . In addition, in the case of a nonmagnetic insulating film made of SiO 2 , a decrease in head output was observed when the film thickness approached 300 Å, and the output decreased by approximately 0.5 dB when the film thickness approached approximately 100 Å. Furthermore, in an experiment with the thickness of the non-magnetic insulating film set to 100 Å or less, it was found that in the case of a non-magnetic insulating film with a thickness of about 50 Å, a Sendust multilayer film with a film thickness of 4 μm per layer does not necessarily have good magnetic properties. It was not something that could be obtained. This is because the effect of the non-magnetic insulating film has weakened due to pinholes in SiO 2 or because the insulation is no longer necessarily good. Therefore, from the above, the thickness of the non-magnetic insulating film of the thin-film magnetic head shown in Fig. 2 is 0.03 μm or more.
Set within the range of less than 0.1 μm. Next, another specific example of the method for manufacturing a thin film magnetic head according to the present invention will be described. A sendust film with a thickness of 5 μm was formed on a nonmagnetic substrate of Mn-Ni oxide using a DC 4-pole sputtering device, and then a nonmagnetic insulating film with a thickness of 1000 Å was formed by sputtering alumina using an RF sputtering device. Formed. This process was repeated 5 times to sequentially form 5 layers of Sendust films each having a thickness of 5 μm with the nonmagnetic insulating film interposed therebetween. Next, this Sendust multilayer film substrate was placed in a vacuum
Annealing is performed for 30 minutes at 600°C in a furnace at 10 -2 to 10 -3 Torr, and the top of the sendust film is then gently lapped and cleaned, and the low melting point glass containing about 70 to 80% lead is coated with the sendust film. and sputtered onto the other Mn--Ni oxide nonmagnetic substrate to a thickness of 0.25 μm. These two substrates are butted together with their low melting point glass films brought into contact with each other, heated under weight under the same conditions as the annealing conditions, and the sendust films are laminated in a sandwich pattern to form a core body. Next, this core body is cut at a predetermined azimuth angle to obtain two core halves. The cut surfaces of these core halves are mirror-finished to form head gap surfaces, and lead-based low melting point glass is sputtered onto these head gap surfaces using an RF sputtering device.
An adhesive material with a thickness of approximately 0.15 μm is formed. and,
The two core halves are butted together so that their respective adhesives are in contact with each other, and bonding is performed in a vacuum furnace at 10 -2 to 10 -3 Torr at a temperature lower than that during lamination, followed by a predetermined process to form a thin film magnetic material. A head is created. The thin film magnetic head thus obtained has an effective gap length of about 0.25 to 0.3 μm,
This sufficiently satisfies short wavelength recording. Note that in the above embodiments and manufacturing method, the case where the Sendust film is laminated only on one non-magnetic substrate and the other non-magnetic substrate is bonded to this is explained, but the Sendust film is laminated on both non-magnetic substrates respectively. It is also possible to laminate them by stacking them and butting them together, and as a non-magnetic insulating film
SiO 2 .Not limited to alumina. [Effects of the Invention] As explained above, according to the present invention, the thickness of each layer of the sendust film to be stacked is 1 to 10 μm.
The thickness of the nonmagnetic insulating film between the sendust films is
Since it is 0.03 μm or more and less than 0.1 μm,
without changing the saturation magnetic flux density and coercive force.
The initial magnetic permeability increases significantly and the magnetic properties are improved,
The head output is significantly increased and there is almost no variation in performance.Furthermore, it is possible to reduce film peeling defects without deteriorating performance, and the manufacturing yield is greatly improved, which is not possible with the above conventional technology. A thin film magnetic head with excellent functionality can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図A,Bは積層されたセンダスト膜の磁気
特性の実験結果を示す特性図、第2図は本発明に
よる薄膜磁気ヘツドの一実施例を示す正面図、第
3図AないしGは第2図の薄膜磁気ヘツドの製造
方法の一具体例を示す工程図、第4図は第2図の
薄膜磁気ヘツドにおける初透磁率に対する再生出
力の測定結果を示す特性図、第5図は第2図にお
ける薄膜磁気ヘツドの非磁性絶縁膜の膜厚に対す
る再生出力の測定結果を示す特性図である。 1,1′……非磁性基板、2,2′,2″……セ
ンダスト膜、3,3′……非磁性絶縁膜。
FIGS. 1A and 1B are characteristic diagrams showing the experimental results of the magnetic properties of stacked Sendust films, FIG. 2 is a front view showing an embodiment of a thin film magnetic head according to the present invention, and FIGS. Figure 2 is a process diagram showing a specific example of the manufacturing method for the thin film magnetic head, Figure 4 is a characteristic diagram showing the measurement results of the reproduction output versus the initial magnetic permeability of the thin film magnetic head in Figure 2, and Figure 5 is a diagram showing the measurement results of the reproduction output with respect to the initial magnetic permeability of the thin film magnetic head in Figure 2. FIG. 3 is a characteristic diagram showing measurement results of reproduction output with respect to the film thickness of the nonmagnetic insulating film of the thin-film magnetic head shown in the figure. 1, 1'... Nonmagnetic substrate, 2, 2', 2''... Sendust film, 3, 3'... Nonmagnetic insulating film.

Claims (1)

【特許請求の範囲】[Claims] 1 2つの非磁性基板間に複数のセンダスト膜が
非磁性絶縁膜のみを介して積層されてなるコア半
体が2個、ギヤツプスペーサを介して、一体化し
てなる薄膜磁気ヘツドであつて、該コア半体夫々
の該センダスト膜の膜厚が1〜10μmで、かつ該
コア半体夫々の該非磁性絶縁膜の膜厚が0.03μm
以上0.1μm未満であることを特徴とする薄膜磁気
ヘツド。
1. A thin film magnetic head comprising two core halves each formed by laminating a plurality of sendust films between two nonmagnetic substrates with only a nonmagnetic insulating film interposed therebetween, and integrated through a gear spacer, the core The thickness of the sendust film of each half is 1 to 10 μm, and the thickness of the nonmagnetic insulating film of each of the core halves is 0.03 μm.
A thin film magnetic head characterized in that the thickness is greater than or equal to 0.1 μm.
JP20453282A 1982-11-24 1982-11-24 Thin film magnetic head Granted JPS5996519A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20453282A JPS5996519A (en) 1982-11-24 1982-11-24 Thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20453282A JPS5996519A (en) 1982-11-24 1982-11-24 Thin film magnetic head

Publications (2)

Publication Number Publication Date
JPS5996519A JPS5996519A (en) 1984-06-04
JPH0465444B2 true JPH0465444B2 (en) 1992-10-20

Family

ID=16492095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20453282A Granted JPS5996519A (en) 1982-11-24 1982-11-24 Thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS5996519A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61260412A (en) * 1985-05-14 1986-11-18 Sharp Corp Member for magnetic head

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543238B2 (en) * 1973-04-10 1979-02-20
JPS57141009A (en) * 1981-02-23 1982-09-01 Hitachi Ltd Thin film magnetic head and its production
JPS57189320A (en) * 1981-05-15 1982-11-20 Comput Basic Mach Technol Res Assoc Thin film magnetic head
JPS5845617A (en) * 1981-09-08 1983-03-16 Sony Corp Magnetic head
JPS5870418A (en) * 1981-10-22 1983-04-26 Sony Corp Manufacture of magnetic head

Also Published As

Publication number Publication date
JPS5996519A (en) 1984-06-04

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