JPH0465544B2 - - Google Patents
Info
- Publication number
- JPH0465544B2 JPH0465544B2 JP458190A JP458190A JPH0465544B2 JP H0465544 B2 JPH0465544 B2 JP H0465544B2 JP 458190 A JP458190 A JP 458190A JP 458190 A JP458190 A JP 458190A JP H0465544 B2 JPH0465544 B2 JP H0465544B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- copper
- semiconductor element
- tungsten
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 43
- 239000010949 copper Substances 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 230000008595 infiltration Effects 0.000 claims description 4
- 238000001764 infiltration Methods 0.000 claims description 4
- 239000011162 core material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000007769 metal material Substances 0.000 description 7
- 238000005219 brazing Methods 0.000 description 6
- 229910052573 porcelain Inorganic materials 0.000 description 6
- 229910000833 kovar Inorganic materials 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 3
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005802 health problem Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
［産業上の利用分野］
本発明は、高周波高出力トランジスターパツケ
ージに関するもので、更に詳しくは高周波高出力
トランジスターパツケージの半導体素子搭載部兼
放熱板として、銅−タングステンあるいは銅−モ
リブデンよりなる非合金組成体を用いたものであ
る。
［従来の技術］
従来、半導体用セラミツクパツケージはグリー
ンセラミツクシートに必要金属層をスクリーンプ
リント法により印刷しこれを積層し焼結一体化し
て、このセラミツク体の金属層に必要な金属部材
をろう付けにより取りつける方法か、又はプレス
法によつてセラミツク枠体を成形し、これにメタ
ライズを施して、このメタライズ部を介して金属
部材とろう付法により接着しパツケージとしてき
た。
しかし、積層パツケージの中でも、半導体素子
を接着する部分、いわゆる半導体素子搭載部がセ
ラミツク上のメタライズ部によつて構成されてい
るパツケージでは、セラミツクを焼結一体化する
際に起るシート自身の歪或いは積層時の外的な力
によつて生ずる歪により半導体素子搭載部のセラ
ミツクに反りや、うねりを生ずることがあるとい
う欠点があり、半導体素子の接着強度が弱いとか
又半導体素子が水平に搭載されない等の欠点が生
じ、半導体素子搭載部の平坦なパツケージを製作
するためにすでに特願昭56−214341号として提案
された発明等がなされてきた。
第２図は従来法による高周波高出力トランジス
ターパツケージの要部断面図であり、セラミツク
と無酸素銅との熱膨脹係数の差を吸収せしめる金
属体としてコバールか又は無酸素素銅等によつて
形成された介在金属枠体３を利用し、セラミツク
枠体１と無酸素銅製半導体素子搭載部兼放熱板２
の間に前記介在金属枠体３をろう付した構成であ
る。
高周波トランジスターでは、その性質上発熱を
伴うため熱伝導性の良いベリリヤ磁器等を用いる
こともなされたが、ベリリヤは毒性を有し、ベリ
リヤ磁器製造の際の労働衛生上の問題や、それに
続く公害問題等のために製造する事業所が少くな
り、又高価であるという欠点があつた。更には高
出力トランジスターでは多量の熱を発生するため
に無酸素銅等の高熱伝導性金属を用いた放熱板を
兼ねた半導体素子搭載部材を取りつけて熱の放散
を行わしめる構造としているが、使用する無酸素
銅とセラミツクとの持つ膨脹係数の差が大きすぎ
るためろう付後セラミツクにクラツク等が発生す
ることがしばしばであつた。又、このクラツクの
発生を防止するために商品名コバールのようなセ
ラミツクと熱膨脹係数の近い金属をセラミツクと
無酸素銅との間に介在させ、しかも該コバール部
材の形状に工夫をこらした形としてろう付するか
又は無酸素銅の形状やセラミツクの形状に工夫を
こらして熱膨脹率の差の解消に努力してきた。
最近、技術の発展に伴つて大型の素子を搭載す
るパツケージが要求されるようになり、したがつ
てパツケージ自体も大型化され、セラミツクの歪
を僅少にとどめたり、接合する半導体素子搭載部
材との膨脹差を解消せしめたりすることがますま
す困難さを増してきた。
一方、シリコン素子と銅を主体とする端子板が
接続される構造の半導体装置において、両者の中
間に、銅中にタングステン又はモリブデンを分散
せしめて焼結してなる電極を介在せしめた装置も
知られている（特開昭50−62776号公報参照）。
［発明が解決しようとする課題］
本発明は前記諸欠点、諸問題を一挙に解決する
だけでなく、大型化を可能にした高周波高出力ト
ランジスターパツケージを提供することを目的と
する。又、用いる材質については、特開昭50−
62776号公報記載の技術では、銅とタングステン
又はモリブデンとの混和物が焼結体であるため、
熱膨脹係数、熱伝導率ともＷ（又はMo）／Cuの
複合則があてはまらず、実質的には空孔が存在す
るもので、メツキ性、気密性や熱伝導性等の基板
に要求される特性の点で問題がある。本発明で
は、Ｗ（又はMo）／Cuの複合材料におけるこの
点の問題も解決するものである。
［課題を解決するための手段］
本発明は、半導体素子搭載用部材兼放熱板がタ
ングステン又はモリブデン多孔体芯材の空〓に溶
浸法により銅を溶融充填した、重量％で99〜70％
がタングステン又はモリブデンからなり、残部が
銅の組成を有し、その熱膨脹係数が搭載する半導
体素子並びにセラミツク枠体の熱膨脹係数に相当
し、かつ高い熱伝導性を具備した非合金組成体に
ニツケルメツキを施して構成され、かつ、その表
面に凹部が形成されており、当該凹部に予めメタ
ライズされたセラミツク枠体が直接ろう付接合さ
れて一体構造とされてなることを特徴とする高周
波高出力トランジスターパツケージである。
本発明で使用する非合金組成体は、上記のとお
りタングステン又はモリブデン多孔体を芯材とし
て、それに銅材を溶融して充填せしめた複合材料
である。これは溶浸法と呼ばれる方法であつて、
この方法によると、毛細管現象によりタングステ
ン又はモリブデンの多孔体の空〓率は、溶融した
銅によりほぼ完全に充填されるので、非合金組成
体の密度は実質100％になる。
前記材料の持つ特性のうち熱膨脹係数及び熱伝
導率を第１表で銅−タングステン組成体につい
て、第２表で銅−モリブデン組成体について示し
た。
[Field of Industrial Application] The present invention relates to a high-frequency, high-output transistor package, and more specifically, a non-alloy composition made of copper-tungsten or copper-molybdenum is used as a semiconductor element mounting portion and a heat sink of a high-frequency, high-output transistor package. It uses the body. [Prior art] Conventionally, ceramic packages for semiconductors have been produced by printing the necessary metal layers on green ceramic sheets using a screen printing method, laminating them, sintering them into one piece, and brazing the necessary metal members to the metal layers of the ceramic body. A ceramic frame is formed by a method of attaching the ceramic frame by a method of attaching the ceramic frame by a method of attaching the ceramic frame to a ceramic frame, or a method of attaching the ceramic frame by a press method, metallizing the frame, and bonding it to a metal member through the metallized portion by a brazing method to form a package. However, among laminated packages, in packages where the part to which the semiconductor element is bonded, the so-called semiconductor element mounting part, is composed of a metallized part on the ceramic, the sheet itself is distorted when the ceramic is sintered and integrated. Another drawback is that distortion caused by external forces during stacking may cause warping or waviness in the ceramic of the semiconductor element mounting area, and the adhesive strength of the semiconductor element may be weak, or the semiconductor element may be mounted horizontally. However, an invention proposed in Japanese Patent Application No. 56-214341 has already been made in order to manufacture a flat package for a semiconductor element mounting portion. Figure 2 is a cross-sectional view of the main parts of a conventional high-frequency, high-output transistor package, in which Kovar or oxygen-free copper is used as a metal body to absorb the difference in coefficient of thermal expansion between ceramic and oxygen-free copper. A ceramic frame 1 and an oxygen-free copper semiconductor element mounting portion/heat sink 2 are constructed using an interposed metal frame 3.
In this structure, the intervening metal frame 3 is brazed in between. Because high-frequency transistors generate heat due to their nature, materials such as Beryllium porcelain, which has good thermal conductivity, have been used. However, Beryllium is toxic, causing occupational health problems during the production of Beryllium porcelain, and subsequent pollution. Due to these problems, there were fewer establishments producing it, and it also had the disadvantage of being expensive. Furthermore, since high-output transistors generate a large amount of heat, they are structured to dissipate heat by attaching a semiconductor element mounting member that also serves as a heat sink using a highly thermally conductive metal such as oxygen-free copper. Because the difference in expansion coefficient between oxygen-free copper and ceramic is too large, cracks often occur in the ceramic after brazing. In addition, in order to prevent the occurrence of cracks, a metal such as Kovar (trade name), which has a coefficient of thermal expansion similar to that of ceramic, is interposed between the ceramic and oxygen-free copper, and the shape of the Kovar member is devised. Efforts have been made to eliminate the difference in coefficient of thermal expansion by brazing or by devising the shape of oxygen-free copper or ceramic. Recently, with the development of technology, there has been a demand for packages that can mount large devices, and the packages themselves have also become larger. It has become increasingly difficult to eliminate the difference in expansion. On the other hand, in a semiconductor device having a structure in which a silicon element and a terminal plate mainly made of copper are connected, a device is also known in which an electrode made by dispersing tungsten or molybdenum in copper and sintering it is interposed between the two. (Refer to Japanese Unexamined Patent Publication No. 1983-62776). [Problems to be Solved by the Invention] An object of the present invention is to not only solve the above-mentioned drawbacks and problems all at once, but also to provide a high-frequency, high-output transistor package that can be made larger. In addition, regarding the materials used, please refer to Japanese Patent Application Laid-Open No.
In the technology described in Publication No. 62776, since the mixture of copper and tungsten or molybdenum is a sintered body,
The combined law of W (or Mo)/Cu does not apply to both the coefficient of thermal expansion and the thermal conductivity, and in reality there are pores, and the properties required for the substrate such as plating, airtightness, and thermal conductivity. There is a problem with this. The present invention also solves this problem in W (or Mo)/Cu composite materials. [Means for Solving the Problems] The present invention provides a semiconductor element mounting member/heat dissipation plate in which copper is melted and filled in the void of a porous tungsten or molybdenum core material by an infiltration method, and is 99 to 70% by weight.
is made of tungsten or molybdenum, the remainder is copper, the coefficient of thermal expansion corresponds to that of the semiconductor element and ceramic frame on which it is mounted, and the non-alloy composition has high thermal conductivity. A high-frequency, high-output transistor package characterized in that it has a recess formed on its surface, and a pre-metalized ceramic frame is directly brazed and joined to the recess to form an integrated structure. It is. As described above, the non-alloy composition used in the present invention is a composite material in which a tungsten or molybdenum porous body is used as a core material and a copper material is melted and filled therein. This is a method called infiltration method,
According to this method, the porosity of the tungsten or molybdenum porous body is almost completely filled with molten copper due to capillarity, so that the density of the non-alloyed composition becomes substantially 100%. Among the properties of the materials, the thermal expansion coefficient and thermal conductivity are shown in Table 1 for the copper-tungsten composition and in Table 2 for the copper-molybdenum composition.
【表】【table】
【表】
第１表及び第２表から明らかなように、銅−タ
ングステン、銅−モリブデン組成体は、銅の含有
量の比較的少い領域においてはセラミツクを持つ
熱膨脹係数50〜75×10-7に適合する熱膨脹係数を
有し、しかもその値はＷ（又はMo）／Cuの複合
則に基づく理論値とほぼ一致するため、銅含有率
を変えることによつて任意に必要とする熱膨脹係
数を有する複合金属材料を得ることができる。し
たがつて現在使用されている金属よりも熱膨脹係
数がセラミツクのそれに適合する金属材料を得る
ことができる。
そして、又、セラミツクと対応する熱膨脹係数
を有する組成体はコバール金属やセラミツクより
１桁上の熱伝導率を有し、セラミツク中で最も熱
伝導率が大きいといわれているベリリヤ磁器の有
する熱膨脹係数（76×10-7）に近い熱膨脹係数を
有する組成体では、ベリリヤ磁器よりはるかに大
きい熱伝導率を有している金属材料である。
そして又、セラミツクと対応する熱膨脹係数を
有する組成体はコバール金属やセラミツクよりも
１桁上の熱伝導率を有し、セラミツク中で最も熱
伝導率が大きいといわれているベリリヤ磁器の有
する熱膨脹係数（76×10-7）に近い熱膨脹係数を
有する組成体では、ベリリヤ磁器よりはるかに大
きい熱伝導率を有している金属材料である。
［実施例］
第１図は本願発明を利用した改良型高周波高出
力トランジスターパツケージの要部断面図であ
る。第１図においてセラミツク枠体１１を常法の
シート積層法により形成し焼結一体化せしめる、
他方半導体素子搭載部兼放熱板１２を溶浸法によ
り形成した銅25％、タングステン75％の組成体及
び銅35％、タングステン65％の組成体により夫々
形成し、ニツケルメツキ2μ前後を施し、前記部
材１２の中央付近凹部に前記セラミツク枠体１１
を載置してろう付法により接合せしめる。このろ
う付の際に、リード等必要な金属（図示せず）を
同時にろう付することができる。その後必要部分
にニツケル又は金等のメツキを施す。これらパツ
ケージのうち、銅35％、タングステン65％よりな
る組成体を使用した場合はセラミツクにクラツク
が入り、そのセラミツクの一部は後日剥離すると
いう現象を生じた。銅25％、タングステン75％の
ものは第２図３に示したごとき介在物を置く構造
にせずセラミツクと直接ろう付しても前記のよう
なクラツク及び剥離現象を生せず所定テストに合
格した。
なお、本実施例ではシート積層法を利用したセ
ラミツク枠体を使用したが、プレス法によつて製
作されたセラミツク枠体についても同様な好結果
が得られている。
［発明の効果］
以上詳細に説明したごとく、本発明はセラミツ
ク材料に金属材料を半導体素子搭載部材として取
りつけたセラミツクパツケージであつて、用いる
金属材料の持つ熱膨脹係数がセラミツク例えばム
ライトなどにも適合しているため、この金属材料
をセラミツク部と容易に置き換えることができ反
りや歪のない平坦な半導体搭載部を持つパツケー
ジをつくり出せるし、したがつて大型化も容易で
ある。更には熱伝導率が大きいため放熱部材とし
て用いることもでき大容量化された半導体素子に
も高い熱放散を必要とするパツケージにも最適で
あり、又本金属材料にメツキ層を形成することに
より直接半導体素子を接着できるためパツケージ
の部品点数を減らしたり形状をシンプルにしたり
することができ今後の高周波高出力トランジスタ
ーパツケージとして必須のものとなるものであ
る。[Table] As is clear from Tables 1 and 2, copper-tungsten and copper-molybdenum compositions have a thermal expansion coefficient of 50 to 75×10 - which has ceramic in the region where the copper content is relatively low. 7 , and its value almost matches the theoretical value based on the compound law of W (or Mo)/Cu, so it can be adjusted arbitrarily by changing the copper content A composite metal material having the following properties can be obtained. Therefore, it is possible to obtain a metal material whose coefficient of thermal expansion matches that of ceramics better than the currently used metals. Furthermore, a composition with a coefficient of thermal expansion corresponding to that of ceramic has a thermal conductivity one order of magnitude higher than that of Kovar metal or ceramics, and the coefficient of thermal expansion of Beryliya porcelain, which is said to have the highest thermal conductivity among ceramics. For compositions with a coefficient of thermal expansion close to (76×10 −7 ), it is a metallic material that has a much greater thermal conductivity than Beryllya porcelain. Furthermore, a composition with a coefficient of thermal expansion corresponding to that of ceramic has a thermal conductivity one order of magnitude higher than that of Kovar metal or ceramic, and the coefficient of thermal expansion of Beryliya porcelain, which is said to have the highest thermal conductivity among ceramics. For compositions with a coefficient of thermal expansion close to (76×10 −7 ), it is a metallic material that has a much greater thermal conductivity than Beryllya porcelain. [Embodiment] FIG. 1 is a sectional view of a main part of an improved high frequency, high output transistor package using the present invention. In FIG. 1, a ceramic frame 11 is formed by a conventional sheet lamination method and sintered into one piece.
On the other hand, the semiconductor element mounting portion/heat dissipation plate 12 is formed by a composition of 25% copper and 75% tungsten and a composition of 35% copper and 65% tungsten, respectively, formed by an infiltration method, and is coated with a nickel plating of about 2 μm. The ceramic frame 11 is placed in a recess near the center of 12.
are placed and joined by brazing. During this brazing, necessary metals (not shown) such as leads can be brazed at the same time. After that, the necessary parts are plated with nickel or gold. Among these packages, when a composition consisting of 35% copper and 65% tungsten was used, cracks appeared in the ceramic, and a portion of the ceramic peeled off at a later date. The one with 25% copper and 75% tungsten did not cause cracking or peeling as described above even when directly brazed to ceramic without any inclusions as shown in Figure 2 and 3, and passed the specified test. . In this example, a ceramic frame made by sheet lamination was used, but similar good results have been obtained with a ceramic frame made by a press method. [Effects of the Invention] As explained in detail above, the present invention is a ceramic package in which a metal material is attached to a ceramic material as a semiconductor element mounting member, and the thermal expansion coefficient of the metal material used is compatible with ceramics such as mullite. Therefore, this metal material can be easily replaced with a ceramic part, making it possible to create a package with a flat semiconductor mounting part without warping or distortion, and therefore making it easy to increase the size. Furthermore, due to its high thermal conductivity, it can be used as a heat dissipation member, making it ideal for large-capacity semiconductor devices and packages that require high heat dissipation. Since semiconductor elements can be directly bonded, the number of parts in the package can be reduced and the shape can be simplified, making it essential for future high-frequency, high-output transistor packages.
第１図は本発明の実施例の高周波高出力トラン
ジスターパツケージの要部断面図、第２図は従来
技術による高周波高出力トランジスターパツケー
ジの要部断面図である。
１…セラミツク枠体、２…無酸素銅製半導体素
子搭載部兼放熱板、３…介在金属枠体、１１…セ
ラミツク枠体、１２…半導体素子搭載部兼放熱
板。
FIG. 1 is a sectional view of a main part of a high frequency, high power transistor package according to an embodiment of the present invention, and FIG. 2 is a sectional view of a main part of a high frequency, high power transistor package according to the prior art. DESCRIPTION OF SYMBOLS 1...Ceramic frame, 2...Semiconductor element mounting part and heat sink made of oxygen-free copper, 3...Interposed metal frame, 11...Ceramic frame, 12...Semiconductor element mounting part and heat sink.
Claims (1)
ン又はモリブデン多孔体芯材の空〓に溶浸法によ
り銅を溶融充填した、重量％で99〜70％がタング
ステン又はモリブデンからなり、残部が銅の組成
を有し、その熱膨脹係数が搭載する半導体素子並
びにセラミツク枠体の熱膨脹係数に相当し、かつ
高い熱伝導性を具備した非合金組成体にニツケル
メツキを施して構成され、かつ、その表面に凹部
が形成されており、当該凹部に予めメタライズさ
れたセラミツク枠体が直接ろう付接合されて一体
構造とされてなることを特徴とする高周波高出力
トランジスターパツケージ。1. The semiconductor element mounting member/heat sink is made of tungsten or molybdenum porous core material, which is melted and filled with copper by infiltration method, and has a composition in which 99 to 70% by weight is tungsten or molybdenum, and the remainder is copper. It is constructed by applying nickel plating to a non-alloy composition having a thermal expansion coefficient corresponding to that of the semiconductor element and ceramic frame on which it is mounted, and having high thermal conductivity, and having recesses on its surface. 1. A high-frequency, high-output transistor package characterized in that a pre-metallized ceramic frame body is directly brazed and joined to the recessed portion to form an integral structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP458190A JPH0340453A (en) | 1990-01-16 | 1990-01-16 | High frequency high output transistor package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP458190A JPH0340453A (en) | 1990-01-16 | 1990-01-16 | High frequency high output transistor package |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57157684A Division JPS5946050A (en) | 1982-09-09 | 1982-09-09 | Ceramic package for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0340453A JPH0340453A (en) | 1991-02-21 |
| JPH0465544B2 true JPH0465544B2 (en) | 1992-10-20 |
Family
ID=11588006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP458190A Granted JPH0340453A (en) | 1990-01-16 | 1990-01-16 | High frequency high output transistor package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0340453A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2665134B2 (en) * | 1993-09-03 | 1997-10-22 | 日本黒鉛工業株式会社 | Flexible circuit board and method of manufacturing the same |
| US9009901B2 (en) | 2011-09-20 | 2015-04-21 | Braun Gmbh | Oral care devices having automatic mode selection |
| CN106876357B (en) * | 2017-01-24 | 2024-11-15 | 深圳市槟城电子股份有限公司 | Electrode for chip packaging and chip packaging structure using the electrode |
-
1990
- 1990-01-16 JP JP458190A patent/JPH0340453A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0340453A (en) | 1991-02-21 |
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