JPH0465644A - pressure sensor - Google Patents
pressure sensorInfo
- Publication number
- JPH0465644A JPH0465644A JP18011990A JP18011990A JPH0465644A JP H0465644 A JPH0465644 A JP H0465644A JP 18011990 A JP18011990 A JP 18011990A JP 18011990 A JP18011990 A JP 18011990A JP H0465644 A JPH0465644 A JP H0465644A
- Authority
- JP
- Japan
- Prior art keywords
- contact parts
- diaphragm region
- stress
- electric conductors
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は圧力センサに関し、特に、基板に設けられた
ダイヤフラム領域上に形成された複数の歪ゲージ間の接
続に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to pressure sensors, and more particularly to connections between a plurality of strain gauges formed on a diaphragm region provided on a substrate.
第2図はダイヤフラム領域を有する従来の圧力センサチ
ップの上面図である。半導体基板1に形成された正方形
のダイヤフラム領域2の各辺中央部には各々ゲージ抵抗
3か形成されている。ゲージ抵抗3は不純物拡散層によ
り形成されている。FIG. 2 is a top view of a conventional pressure sensor chip with a diaphragm region. A gauge resistor 3 is formed at the center of each side of a square diaphragm region 2 formed on a semiconductor substrate 1. Gauge resistor 3 is formed of an impurity diffusion layer.
ゲージ抵抗3の両端は各々アルミ配線4によりコンタク
トかとられており、4つのゲージ抵抗3によりブリッジ
回路が形成される。Both ends of the gauge resistors 3 are connected to each other by aluminum wiring 4, and a bridge circuit is formed by the four gauge resistors 3.
次に動作について説明する。ダイヤフラム領域2に応力
が加えられるとゲージ抵抗3の抵抗値か応力の大きさに
応じて変化し、この抵抗値に応した電圧が出力される。Next, the operation will be explained. When stress is applied to the diaphragm region 2, the resistance value of the gauge resistor 3 changes depending on the magnitude of the stress, and a voltage corresponding to this resistance value is output.
従来の圧力センサは以上のように構成され、応力を受け
るダイヤフラム領域2上に、ゲージ抵抗3とアルミ配線
4のコンタクト部が8ケ所存在し、応力によりコンタク
ト部に歪みが生しノイズが生じやすい。また、コンタク
ト部自身もノイズの原因となりやすいという問題点があ
った。The conventional pressure sensor is constructed as described above, and there are eight contact parts between the gauge resistor 3 and the aluminum wiring 4 on the diaphragm region 2 which is subjected to stress, and the stress tends to cause distortion in the contact parts and generate noise. . Another problem is that the contact portion itself tends to cause noise.
この発明は上記のような問題点を解決するためになされ
たもので、ノイズの生じにくい圧力センサを得ることを
目的とする。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a pressure sensor that is less likely to generate noise.
この発明に係る圧力センサは、半導体基板と、前記半導
体基板に形成されたダイヤフラム領域と、前記ダイヤフ
ラム領域上に形成され、前記ダイヤフラム領域に加えら
れた応力を電気信号に変換する複数の歪ゲージと、前記
半導体基板上に形成され、前記複数の歪ケージ間の接続
を行うための拡散配線層を備えている。A pressure sensor according to the present invention includes a semiconductor substrate, a diaphragm region formed on the semiconductor substrate, and a plurality of strain gauges formed on the diaphragm region and converting stress applied to the diaphragm region into electrical signals. , a diffusion wiring layer formed on the semiconductor substrate for connecting the plurality of strain cages.
この発明においてはダイヤフラム領域上に形成された複
数の歪ゲージ、の接続を拡散配線層で行ったのて、ダイ
ヤフラム領域上に歪ゲージとアルミ配線とのコンタクト
部をなくすことができる。In this invention, since the plurality of strain gauges formed on the diaphragm region are connected by the diffusion wiring layer, it is possible to eliminate the contact portion between the strain gauges and the aluminum wiring on the diaphragm region.
第1図はこの発明に係る圧力センサの一実施例を示す上
面図である。図において、第2図に示した従来例との相
違点は、ゲージ抵抗3の接続をアルミ配線4てなく拡散
配線層5により行い、ダイヤフラム領域2外で拡散配線
層5とアルミ配線4とのコンタクトをとったことである
。拡散配線層5はケージ抵抗3に隣接するように半導体
基板1に不純物を拡散させることにより形成する。アル
ミ配線4は該圧力センサに電源電圧■。CやGND電位
を与えたり、出力の引き出しの役目をする。FIG. 1 is a top view showing an embodiment of a pressure sensor according to the present invention. In the figure, the difference from the conventional example shown in FIG. I made contact with them. Diffusion wiring layer 5 is formed by diffusing impurities into semiconductor substrate 1 so as to be adjacent to cage resistor 3 . The aluminum wiring 4 connects the pressure sensor to the power supply voltage ■. It provides C or GND potential and serves as an output drawer.
動作については従来と同様である。すなわち、ダイヤフ
ラム領域2に応力が加えられるとケージ抵抗3の抵抗値
か変化し、この抵抗値に応した電圧が出力される。複数
のゲージ抵抗3間の接続を拡散配線層5により行い、ダ
イヤフラム領域2上にはアルミ配線4とのコンタクト部
か存在しない。The operation is the same as before. That is, when stress is applied to the diaphragm region 2, the resistance value of the cage resistor 3 changes, and a voltage corresponding to this resistance value is output. Connections between the plurality of gauge resistors 3 are made by a diffusion wiring layer 5, and there is no contact portion with the aluminum wiring 4 on the diaphragm region 2.
そのため、ダイヤフラム領域2に応力を加えた場合、従
来のようにゲージ抵抗3とアルミ配線4とのコンタクト
部に歪みが生しることはなく、ノイスか低減する。また
、拡散配線層5とアルミ配線4とのコンタクト部は図に
示すように4ケ所となり、コンタクト部自体も数か半分
になっているので、さらにノイズが低減する。Therefore, when stress is applied to the diaphragm region 2, distortion does not occur in the contact portion between the gauge resistor 3 and the aluminum wiring 4 as in the conventional case, and noise is reduced. Further, the number of contact portions between the diffusion wiring layer 5 and the aluminum wiring 4 is four as shown in the figure, and the number of contact portions themselves is reduced by half or half, further reducing noise.
なお、上記実施例ではダイヤフラム領域2に加えられた
応力を電気信号に変換する歪ゲージとしてゲージ抵抗を
示したか、その他のものでもよい。In the above embodiment, a strain gauge was used as a strain gauge to convert the stress applied to the diaphragm region 2 into an electrical signal, but other gauges may be used.
以上のようにこの発明によれば、ダイヤフラム領域上に
形成された複数の歪ゲージ間の接続を行うための拡散配
線層を設けたのて、ダイヤフラム領域上に歪ケージとア
ルミ配線とのコンタクト部をなくすことかできる。その
結果、コンタクト部に応力か加わることかなく、ノイズ
が低減するという効果かある。As described above, according to the present invention, after providing a diffusion wiring layer for connecting a plurality of strain gauges formed on a diaphragm region, a contact portion between a strain cage and an aluminum wiring is provided on a diaphragm region. It is possible to eliminate it. As a result, no stress is applied to the contact portion, which has the effect of reducing noise.
第1図はこの発明に係る圧力センサの一実施例を示す上
面図、第2図は従来の圧力センサの上面図である。
図において、1は半導体基板、2はダイヤフラム領域、
3はゲージ抵抗、5は拡散配線層である。
なお、各図中同一符号は同一または相当部分を示す。
第 1 崗
第2図FIG. 1 is a top view showing an embodiment of a pressure sensor according to the present invention, and FIG. 2 is a top view of a conventional pressure sensor. In the figure, 1 is a semiconductor substrate, 2 is a diaphragm region,
3 is a gauge resistor, and 5 is a diffusion wiring layer. Note that the same reference numerals in each figure indicate the same or corresponding parts. Part 1 Figure 2
Claims (1)
領域に加えられた応力を電気信号に変換する複数の歪ゲ
ージと、 前記半導体基板上に形成され、前記複数の歪ゲージ間の
接続を行うための拡散配線層を備えた圧力センサ。(1) A semiconductor substrate, a diaphragm region formed on the semiconductor substrate, a plurality of strain gauges formed on the diaphragm region and converting stress applied to the diaphragm region into electrical signals, and on the semiconductor substrate. A pressure sensor comprising a diffusion wiring layer for connecting the plurality of strain gauges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2180119A JP2628931B2 (en) | 1990-07-05 | 1990-07-05 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2180119A JP2628931B2 (en) | 1990-07-05 | 1990-07-05 | Pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0465644A true JPH0465644A (en) | 1992-03-02 |
| JP2628931B2 JP2628931B2 (en) | 1997-07-09 |
Family
ID=16077752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2180119A Expired - Lifetime JP2628931B2 (en) | 1990-07-05 | 1990-07-05 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2628931B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002037011A (en) * | 2000-06-13 | 2002-02-06 | Takata Corp | Device and method for protecting vehicle occupant |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197873A (en) * | 1981-05-29 | 1982-12-04 | Hitachi Ltd | Semiconductor pressure detector |
-
1990
- 1990-07-05 JP JP2180119A patent/JP2628931B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197873A (en) * | 1981-05-29 | 1982-12-04 | Hitachi Ltd | Semiconductor pressure detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002037011A (en) * | 2000-06-13 | 2002-02-06 | Takata Corp | Device and method for protecting vehicle occupant |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2628931B2 (en) | 1997-07-09 |
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