JPH0466244B2 - - Google Patents
Info
- Publication number
- JPH0466244B2 JPH0466244B2 JP61019443A JP1944386A JPH0466244B2 JP H0466244 B2 JPH0466244 B2 JP H0466244B2 JP 61019443 A JP61019443 A JP 61019443A JP 1944386 A JP1944386 A JP 1944386A JP H0466244 B2 JPH0466244 B2 JP H0466244B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- pattern
- resist
- layer
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920000642 polymer Polymers 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 229920000620 organic polymer Polymers 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- KTZVZZJJVJQZHV-UHFFFAOYSA-N 1-chloro-4-ethenylbenzene Chemical compound ClC1=CC=C(C=C)C=C1 KTZVZZJJVJQZHV-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- MSSUFHMGCXOVBZ-UHFFFAOYSA-N anthraquinone-2,6-disulfonic acid Chemical compound OS(=O)(=O)C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 MSSUFHMGCXOVBZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- RDHPKYGYEGBMSE-UHFFFAOYSA-N bromoethane Chemical compound CCBr RDHPKYGYEGBMSE-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- FIONWRDVKJFHRC-UHFFFAOYSA-N trimethyl(2-phenylethenyl)silane Chemical compound C[Si](C)(C)C=CC1=CC=CC=C1 FIONWRDVKJFHRC-UHFFFAOYSA-N 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はケイ素原子を含むスチレン系重合体お
よびパターン形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a styrenic polymer containing silicon atoms and a pattern forming method.
最近、半導体集積回路、磁気バブルメモリ等の
製造に適する微細パターン形成方法として、二層
レジスト法が提案されている。この方法は、基板
上に有機高分子層を形成した後、その上にケイ素
含有レジスト層を設け、次いで露光、現像、転写
を行つて微細パターンを形成するものである。現
在、この二層レジスト法に適したケイ素含有レジ
ストの開発が盛んに行なわれている。
Recently, a two-layer resist method has been proposed as a fine pattern forming method suitable for manufacturing semiconductor integrated circuits, magnetic bubble memories, and the like. In this method, after forming an organic polymer layer on a substrate, a silicon-containing resist layer is provided thereon, and then exposure, development, and transfer are performed to form a fine pattern. Currently, silicon-containing resists suitable for this two-layer resist method are being actively developed.
Ｘ線、電子線あるいは紫外線に感応するケイ素
含有レジストとしてトリメチルシリルスチレンあ
るいはその共重合体が提案されている（例えば特
願昭57−123865〔特開昭59−15243号公報〕）。 Trimethylsilylstyrene or a copolymer thereof has been proposed as a silicon-containing resist sensitive to X-rays, electron beams, or ultraviolet rays (for example, Japanese Patent Application No. 123,865/1986 [Japanese Patent Application Laid-open No. 15243/1989]).
しかしながら、これら従来のレジスト材料のド
ライエツチング耐性は必ずしも満足できるもので
はない。一般にドライエツチング耐性が不十分の
場合、パターン転写時のエツチング条件が制限
される、エツチング時間が長くなる、マスク
パターンが正確に転写されない、いわゆるパター
ン変換差が生じる、等の問題を生じる。
However, the dry etching resistance of these conventional resist materials is not necessarily satisfactory. In general, when dry etching resistance is insufficient, problems such as etching conditions during pattern transfer are restricted, etching time becomes longer, mask patterns are not transferred accurately, and so-called pattern conversion differences occur.
本発明の目的はレジスト材料としてドライエツ
チング耐性の強いケイ素原子を含むスチレン系重
合体を提供することにある。 An object of the present invention is to provide a styrenic polymer containing silicon atoms that has strong dry etching resistance and is used as a resist material.
本発明の他の目的は二層レジスト法における微
細なパターン形成方法を提供することにある。 Another object of the present invention is to provide a method for forming fine patterns in a two-layer resist method.
第１の本発明のケイ素原子を含むスチレン系重
合体は、下記一般式で示される重量平均分子量が
10000〜500000のものである。
The styrenic polymer containing silicon atoms according to the first aspect of the present invention has a weight average molecular weight represented by the following general formula.
10,000 to 500,000.
又、第２の発明のパターン形成方法は有機高分
子層を形成した基板上に、下記一般式で示される
ケイ素原子を含む重量平均分子量が10000〜
500000のスチレン系重合体からなるレジスト層を
設けた後、Ｘ線、電子線あるいは紫外線によりレ
ジスト層にネガパターンを形成し、該ネガパター
ンをマスクとして前記有機高分子層をドライエツ
チングし、微細パターンを形成するものである。 Further, in the pattern forming method of the second invention, a substrate on which an organic polymer layer is formed has a weight average molecular weight of 10,000 to 10,000 including silicon atoms represented by the following general formula.
After forming a resist layer made of 500,000 styrene polymer, a negative pattern is formed on the resist layer using X-rays, electron beams, or ultraviolet rays, and the organic polymer layer is dry-etched using the negative pattern as a mask to form a fine pattern. It forms the
一般式：
（式中、ｎは正の整数を表わし、R1、R2、R3、
R4、R5はメチル基、エチル基、プロピル基、ブ
チル基、アミル基、ヘキシル基などの低級アルキ
ル基もしくは水素原子を表わす。）
〔作用〕
本発明によるケイ素原子を含むスチレン系重合
体（以下単にスチレン系重合体という）は、その
構成単位当りケイ素原子を２個含むために、重合
体中のケイ素含有量が非常に大きくなる。一方、
酸素を用いたドライエツチングにおいては、その
エツチング耐性と被エツチング材料中のケイ素含
有量は強く相関しており、ケイ素含有量が高いほ
どエツチング耐性が強くなる。 General formula: (In the formula, n represents a positive integer, R 1 , R 2 , R 3 ,
R 4 and R 5 represent a lower alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, an amyl group, a hexyl group, or a hydrogen atom. ) [Function] The styrenic polymer containing silicon atoms according to the present invention (hereinafter simply referred to as styrenic polymer) contains two silicon atoms per constituent unit, so the silicon content in the polymer is very large. Become. on the other hand,
In dry etching using oxygen, there is a strong correlation between the etching resistance and the silicon content in the material to be etched; the higher the silicon content, the stronger the etching resistance.
本発明によるスチレン系重合体はケイ素含有量
が高いために、非常に優れたドライエツチング耐
性を示す。その結果、前記したエツチング上の問
題を低減できることになる。 Owing to their high silicon content, the styrenic polymers according to the invention exhibit very good dry etching resistance. As a result, the above-mentioned etching problem can be reduced.
本発明によるスチレン系重合体は次のような反
応式で合成される。 The styrenic polymer according to the present invention is synthesized using the following reaction formula.
（式中、ｎは正の整数を表わし、R1、R2、R3、
R4、R5はメチル基、エチル基、プロピル基、ブ
チル基、アミル基、ヘキシル基などの低級アルキ
ル基もしくは水素原子を表わす。）
このようにして合成したスチレン系重合体膜に
Ｘ線、電子線あるいは紫外線を照射後、適当な有
機溶剤で現像することにより、照射部分のみを残
すことができるので、本発明によるスチレン系重
合体は、いわゆる、ネガ型レジストとして使用で
きる。 (In the formula, n represents a positive integer, R 1 , R 2 , R 3 ,
R 4 and R 5 represent a lower alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, an amyl group, a hexyl group, or a hydrogen atom. ) After irradiating the styrene polymer film synthesized in this way with X-rays, electron beams, or ultraviolet rays, it is possible to leave only the irradiated portion by developing it with an appropriate organic solvent. The combination can be used as a so-called negative resist.
従つてこのネガ型レジストで形成したパターン
をマスクとして用いることにより有機高分子層に
微細なパターンを転写することができる。 Therefore, by using a pattern formed with this negative resist as a mask, a fine pattern can be transferred to the organic polymer layer.
なお、本発明のケイ素原子を含むスチレン系重
合体の重量平均分子量が10000より小さい場合は
形成したネガパターンの現像液に対する耐性ある
いは耐熱性に問題があり、500000より大きい場合
は製造上不利であり、また塗布用溶剤あるいは現
像液の選定が難しくなる。 If the weight average molecular weight of the styrene polymer containing silicon atoms of the present invention is less than 10,000, there will be a problem in the resistance or heat resistance of the formed negative pattern to the developer, and if it is greater than 500,000, it will be disadvantageous in production. Furthermore, it becomes difficult to select a coating solvent or developer.
次に本発明の実施例を説明する。 Next, examples of the present invention will be described.
まず第１の発明のスチレン系重合体の合成方法
の一例について説明する。 First, an example of the method for synthesizing the styrenic polymer of the first invention will be explained.
スチレン系重合体を形成する一例の単量体であ
る。 This is an example of a monomer that forms a styrenic polymer.
は次のような方法で合成した。 was synthesized in the following way.
乾燥窒素ガスでフラスコ内を置換後、グリニヤ
ール用マグネシウム1.5ｇ（0.06グラム原子）お
よび乾燥テトラヒドロフラン（以下THFと記す）
10mlを仕込んだ。少量のエチルブロマイドを加え
た後、Ｐ−クロルスチレン８ｇ（0.06モル）と乾
燥THF50mlからなる溶液を滴下し、反応させた。 After replacing the inside of the flask with dry nitrogen gas, add 1.5 g (0.06 gram atom) of Grignard magnesium and dry tetrahydrofuran (hereinafter referred to as THF).
I prepared 10ml. After adding a small amount of ethyl bromide, a solution consisting of 8 g (0.06 mol) of P-chlorostyrene and 50 ml of dry THF was added dropwise to react.
次いで、約50℃に保ちながら、クロルペンタメ
チルジシルメチレン９ｇ（0.05モル）と乾燥
THF15mlからなる溶液を滴下し、反応させた。
滴下後、約１時間室温で撹拌した。次いで、水を
100ml加えた後エーテル抽出を行い、エーテル層
を硫酸マグネシウムで乾燥させた。エーテルを除
去後、減圧蒸留で生成物を得た。収量は5.2ｇ
（収率42％）、沸点は104℃／２mmHgであつた。 Next, while maintaining the temperature at approximately 50°C, add 9 g (0.05 mol) of chlorpentamethyldisylmethylene and dry.
A solution consisting of 15 ml of THF was added dropwise to react.
After the dropwise addition, the mixture was stirred at room temperature for about 1 hour. Then add water
After adding 100 ml, ether extraction was performed, and the ether layer was dried with magnesium sulfate. After removing the ether, the product was obtained by vacuum distillation. Yield: 5.2g
(Yield: 42%), and the boiling point was 104°C/2mmHg.
次にスチレン重合体 は次のような方法で合成した。 Next, styrene polymer was synthesized in the following way.
上述の方法で合成した単量体5.0ｇ、アソビス
イソブチルニトリル（以下AIBNと記す）30mgお
よびベンゼン５mlを仕込み、脱気後70℃で19時間
かけて重合反応を行つた。 5.0 g of the monomer synthesized by the above method, 30 mg of asobisisobutylnitrile (hereinafter referred to as AIBN), and 5 ml of benzene were charged, and after degassing, a polymerization reaction was carried out at 70° C. for 19 hours.
反応後、メチルアルコール中に反応溶液を投入
することにより、白色固体を得た。この重合体を
メチルエチルケトンとメチルアルコールの溶液を
用いて、常法により分別精製を行つた。収量は
1.5ｇ（収率30％）であつた。ゲルパーミエイシ
ヨンクロマトグラフイ法により求めた重量平均分
子量は約26000、多分散度は約1.3であつた。ま
た、この重合物の核磁気共鳴スペクトル（δ）
ppmは０（11H、エチル基およびメチレン基）、
0.3（6H、メチル基）、1.0〜2.0（3H、メチレン
基）、6.2〜7.3（4H、ベンゼン環）の位置に現われ
た。 After the reaction, a white solid was obtained by pouring the reaction solution into methyl alcohol. This polymer was fractionated and purified by a conventional method using a solution of methyl ethyl ketone and methyl alcohol. The yield is
The amount was 1.5g (yield 30%). The weight average molecular weight determined by gel permeation chromatography was about 26,000, and the polydispersity was about 1.3. In addition, the nuclear magnetic resonance spectrum (δ) of this polymer
ppm is 0 (11H, ethyl group and methylene group),
They appeared at positions 0.3 (6H, methyl group), 1.0-2.0 (3H, methylene group), and 6.2-7.3 (4H, benzene ring).
このようにして合成した重合体１ｇをキシレン
10mlに溶解させて、レジスト溶液とし、Si基板上
にスピン塗布法により、厚さ0.2μｍの重合体層を
形成した。そして電子線露光装置を用いて約
200μc／cm2照射後、THFとエチルアルコールから
なる現像液に１分間、次いで、イソプロピルアル
コールに１分間浸漬した。 1 g of the polymer synthesized in this way was mixed with xylene.
It was dissolved in 10 ml to form a resist solution, and a 0.2 μm thick polymer layer was formed on a Si substrate by spin coating. Then, using an electron beam exposure device, approximately
After irradiation with 200 μc/cm 2 , it was immersed in a developer consisting of THF and ethyl alcohol for 1 minute, and then in isopropyl alcohol for 1 minute.
その結果、Si基板上にほとんど膜減りのないネ
ガパターンが得られた。 As a result, a negative pattern with almost no film loss was obtained on the Si substrate.
次に第２の発明のパターン形成方法の一実施例
について説明する。 Next, an embodiment of the pattern forming method of the second invention will be described.
Si基板上に、スピン塗布法によりノボラツク樹
脂層を形成し、250℃で１時間加熱処理した。こ
の時、ノボラツク樹脂層の厚みは約1.5μｍであつ
た。 A novolak resin layer was formed on a Si substrate by spin coating and heat treated at 250°C for 1 hour. At this time, the thickness of the novolak resin layer was approximately 1.5 μm.
次いで、このノボラツク樹脂層の上に、スチレ
ン系重合体１ｇをキシレン10mlに溶解させて調整
したレジスト溶液を用いて、厚さ約0.2μｍのレジ
スト層を形成した。そして、電子線露光装置を用
いて露光後、THFとエチルアルコールからなる
現像液とイソプロピルアルコールに浸漬し、サブ
ミクロンのネガパターンを得た。 Next, a resist layer having a thickness of about 0.2 μm was formed on this novolak resin layer using a resist solution prepared by dissolving 1 g of a styrene polymer in 10 ml of xylene. After exposure using an electron beam exposure device, it was immersed in a developer consisting of THF and ethyl alcohol and isopropyl alcohol to obtain a submicron negative pattern.
更に、このネガパターンをマスクとし反応性イ
オンエツチング装置を用いて、酸素流量
5SCCM2.0Pa、0.16W／cm2の条件で７分間エツチ
ングと行つた。 Furthermore, using this negative pattern as a mask and using a reactive ion etching device, the oxygen flow rate was adjusted.
Etching was carried out for 7 minutes under the conditions of 5SCCM2.0Pa and 0.16W/ cm2 .
その結果、レジスト層からなるサブミクロンの
パターンが下層のノボラツク樹脂層に精度良く転
写されていることが走査型電子顕微鏡により確認
された。また、Ｘ線露光法、紫外線露光法などを
用いた場合も同様に微細なパターンが得られた。 As a result, it was confirmed by a scanning electron microscope that the submicron pattern made of the resist layer was accurately transferred to the underlying novolak resin layer. Similarly, fine patterns were also obtained using X-ray exposure, ultraviolet exposure, and the like.
以上説明したように、本発明のケイ素原子を含
むスチレン系重合体はケイ素含有量が多い為にド
ライエツチング耐性の強いレジストとして使用で
きる効果がある。
As explained above, the silicon atom-containing styrenic polymer of the present invention has a large silicon content, so it can be used as a resist with strong dry etching resistance.
更に、このスチレン系重合体膜を露光、現像す
ることによつて得られるネガパターンはドライエ
ツチングにより、厚い有機高分子層をエツチング
する際のマスクとして充分な耐性を示す為、有機
高分子層へのパターン転写を精度良く行なえると
いう効果がある。 Furthermore, the negative pattern obtained by exposing and developing this styrene polymer film has sufficient resistance as a mask when etching a thick organic polymer layer by dry etching. This has the effect that pattern transfer can be performed with high precision.
Claims (1)
R4、R5はメチル基、エチル基、プロピル基、ブ
チル基、アミル基、ヘキシル基などの低級アルキ
ル基もしくは水素原子を表わす。）で示されるケ
イ素原子を含む重量平均分子量が10000〜500000
のスチレン系重合体。 ２ 有機高分子層を形成した基板上に、 一般式： （式中、ｎは正の整数を表わし、R1、R2、R3、
R4、R5はメチル基、エチル基、プロピル基、ブ
チル基、アミル基、ヘキシル基などの低級アルキ
ル基もしくは水素原子を表わす。）で示されるケ
イ素原子を含む重量平均分子量が10000〜500000
のスチレン系重合体からなるレジスト層を設けた
後、Ｘ線、電子線あるいは紫外線によりレジスト
層にネガパターンを形成し、該ネガパターンをマ
スクとして前記有機高分子層をドライエツチング
し、微細パターンを形成することを特徴とするパ
ターン形成方法。[Claims] 1. General formula: (In the formula, n represents a positive integer, R 1 , R 2 , R 3 ,
R 4 and R 5 represent a lower alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, an amyl group, a hexyl group, or a hydrogen atom. ) The weight average molecular weight including silicon atoms is 10,000 to 500,000
styrenic polymer. 2 On the substrate on which the organic polymer layer is formed, the general formula: (In the formula, n represents a positive integer, R 1 , R 2 , R 3 ,
R 4 and R 5 represent a lower alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, an amyl group, a hexyl group, or a hydrogen atom. ) The weight average molecular weight including silicon atoms is 10,000 to 500,000
After forming a resist layer made of a styrene polymer, a negative pattern is formed on the resist layer using X-rays, electron beams, or ultraviolet rays, and the organic polymer layer is dry-etched using the negative pattern as a mask to form a fine pattern. A pattern forming method characterized by forming a pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61019443A JPS62177005A (en) | 1986-01-30 | 1986-01-30 | Styrene polymer containing silicon atom and pattern formation therewith |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61019443A JPS62177005A (en) | 1986-01-30 | 1986-01-30 | Styrene polymer containing silicon atom and pattern formation therewith |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62177005A JPS62177005A (en) | 1987-08-03 |
| JPH0466244B2 true JPH0466244B2 (en) | 1992-10-22 |
Family
ID=11999445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61019443A Granted JPS62177005A (en) | 1986-01-30 | 1986-01-30 | Styrene polymer containing silicon atom and pattern formation therewith |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62177005A (en) |
-
1986
- 1986-01-30 JP JP61019443A patent/JPS62177005A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62177005A (en) | 1987-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3980572B2 (en) | Monomers and polymers with high silicon content suitable for 193 nm bilayer resists | |
| EP0185030B1 (en) | Bilevel resist | |
| GB2158450A (en) | Silicon-containing novolak resin and material and pattern forming method using same | |
| JP2619358B2 (en) | Photosensitive resin composition | |
| JPS63271248A (en) | Silicon-containing resist | |
| JP2659025B2 (en) | Radiation resist, method of manufacturing the same, and method of forming pattern | |
| US6479219B2 (en) | Polymers having silicon-containing acetal or ketal functional groups | |
| JPH05249681A (en) | Acid decomposable compound and positive radiation sensitive resist composition containing the same | |
| JPH0466244B2 (en) | ||
| JPH0466243B2 (en) | ||
| JPS62191849A (en) | Radiation sensitive resin composition | |
| JPH0427542B2 (en) | ||
| JPH054665B2 (en) | ||
| US6482566B1 (en) | Hydroxycarborane photoresists and process for using same in bilayer thin film imaging lithography | |
| JPS6120031A (en) | Resist material and its preparation | |
| JPS62135823A (en) | Resist composition and pattern forming method | |
| JPH06123970A (en) | Positive resist material | |
| US4520097A (en) | Negative-type resist sensitive to ionizing radiation | |
| JPS61143746A (en) | Novel high-energy ray sensitive material | |
| JPS6347753A (en) | Resist material and formation of pattern | |
| JPH0734113B2 (en) | Resist material | |
| JPH054666B2 (en) | ||
| JP2000319396A (en) | Method for producing polysulfone derivative for photosensitive resin, polysulfone derivative produced by the method, resist composition using the polysulfone derivative | |
| JPS6347752A (en) | Resist material and formation of pattern | |
| JPS6234908A (en) | Alpha-methylstyrene polymer containing silicon and vinyl group, composition containing same and use thereof |