JPH0466662A - Vacuum vapor deposition apparatus - Google Patents
Vacuum vapor deposition apparatusInfo
- Publication number
- JPH0466662A JPH0466662A JP17860390A JP17860390A JPH0466662A JP H0466662 A JPH0466662 A JP H0466662A JP 17860390 A JP17860390 A JP 17860390A JP 17860390 A JP17860390 A JP 17860390A JP H0466662 A JPH0466662 A JP H0466662A
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- Prior art keywords
- vapor
- recovery plate
- temp
- substrate
- vapor deposition
- Prior art date
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Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は電子ビーム加熱方式による真空蒸着装置におい
て、特に基板以外に付着した蒸着物質を連続的に回収し
、再び蒸着に利用することにより、装置の運転効率およ
び経済性を向上させるようにした真空蒸着装置に関する
。[Detailed Description of the Invention] [Objective of the Invention] (Industrial Field of Application) The present invention is a vacuum evaporation apparatus using an electron beam heating method, in particular, which continuously collects evaporation substances adhering to surfaces other than the substrate and performs evaporation again. The present invention relates to a vacuum evaporation apparatus that can be used to improve the operating efficiency and economic efficiency of the apparatus.
(従来の技術)
従来、例えば、半導体成膜処理の開発では−船釣に真空
蒸発による薄膜生成技術が採用されている。(Prior Art) Conventionally, for example, in the development of semiconductor film forming processing, a thin film forming technique using vacuum evaporation has been adopted for boat fishing.
この薄膜生成技術は蒸着物質を真空中で蒸気化して基板
に蒸着させるものであり、物質を蒸発させるための手段
としては特に電子ビームが発生、制御等に係わる技術的
簡易性および経済的に有利であるという理由から、広く
使用されている。This thin film production technology vaporizes the deposition material in vacuum and deposits it on the substrate, and as a means for vaporizing the material, electron beams are particularly advantageous due to their technical simplicity and economical aspects in terms of generation and control. It is widely used because of this.
第5図はかかる電子ビーム加熱方式による真空蒸着装置
の概略構成例を模式的に示すものである。FIG. 5 schematically shows an example of a schematic configuration of a vacuum evaporation apparatus using such an electron beam heating method.
第5図において、真空槽1は図示していない真空排気装
置により所定の真空度(10−’〜1O−6Torr)
に保持されている。この真空槽1内には上部から下部方
向に狭まるように傾斜する周壁面を有する蒸気封入容器
2が設けられており、この蒸気封入容器2の下部には蒸
着物質3を収容したるつぼ4が設置され、その上方に蒸
着すべき基板5が図示しない支持体に支持させて設けら
れている。また、るつぼ4の一側方に電子銃6が配設さ
れ、この電子銃6から発射された電子ビーム7を蒸着物
質3に照射(電子衝撃)することにより、蒸着物質3を
加熱、蒸発せしめて蒸気流8を生成させる。この場合、
るつぼ4には冷却バイブ9が埋設されており、加熱時に
冷却水を流してるつぼ4が高温になり過ぎて溶融しない
ようにしである。In FIG. 5, the vacuum chamber 1 is maintained at a predetermined degree of vacuum (10-' to 10-6 Torr) by an evacuation device (not shown).
is maintained. Inside the vacuum chamber 1, a steam enclosure 2 having a circumferential wall surface that is inclined to narrow from the top to the bottom is provided, and a crucible 4 containing a vapor deposition substance 3 is installed at the bottom of the vapor enclosure 2. A substrate 5 to be vapor-deposited is provided above it and supported by a support (not shown). Further, an electron gun 6 is disposed on one side of the crucible 4, and the vapor deposition material 3 is heated and evaporated by irradiating the vapor deposition material 3 with an electron beam 7 emitted from the electron gun 6 (electronic impact). to generate a steam stream 8. in this case,
A cooling vibrator 9 is embedded in the crucible 4 to prevent the crucible 4 through which cooling water is flowed during heating from becoming too high and melting.
また、基板5の上方には基板5とは異なる方向に蒸発す
る蒸気流10を回収するための2個の蒸気回収板11が
基板5の上方部から斜め下方に傾斜させて左右対称に配
設され、図示しない支持部材により支持されている。Further, above the substrate 5, two vapor recovery plates 11 for recovering vapor flow 10 that evaporates in a direction different from that of the substrate 5 are arranged symmetrically so as to be inclined obliquely downward from the upper part of the substrate 5. and is supported by a support member (not shown).
したがって、このような構成の真空蒸着装置において、
るつぼ4に収納された蒸着物質3に電子銃6より電子ビ
ーム7を照射して該蒸着物質3を加熱、蒸発させると蒸
気流が生成されて拡散し、基板方向に上昇する蒸気流8
は基板5に衝突すると該基板5上に蒸着膜12が形成さ
れ、また基板5方向とは異なる方向に蒸発する蒸気流1
0が蒸気回収板11に衝突すると該回収板11に蒸着膜
13が形成される。この蒸気回収板11に形成された蒸
着膜13は回収板11全体を図示しない熱源で蒸着物質
の溶融点以上の温度で一様に加熱することにより、溶融
、液化し、これを蒸気回収板11の下面の傾斜面に沿っ
て流下させ、蒸気封入容器2の壁面に伝ってるつぼ4内
に回収するようにしている。Therefore, in a vacuum evaporation apparatus with such a configuration,
When the vapor deposition material 3 housed in the crucible 4 is irradiated with an electron beam 7 from an electron gun 6 to heat and evaporate the vapor deposition material 3, a vapor flow is generated and diffused, and a vapor flow 8 rises toward the substrate.
When collides with the substrate 5, a vapor deposited film 12 is formed on the substrate 5, and the vapor flow 1 evaporates in a direction different from the direction of the substrate 5.
0 collides with the vapor recovery plate 11, a vapor deposited film 13 is formed on the recovery plate 11. The vapor deposited film 13 formed on the vapor recovery plate 11 is melted and liquefied by uniformly heating the entire recovery plate 11 with a heat source (not shown) at a temperature higher than the melting point of the vapor deposition material. The liquid flows down along the slope of the lower surface of the steam container 2, and is collected into the crucible 4 along the wall surface of the steam enclosure container 2.
(発明が解決しようとする課題)
しかし、このような従来の真空蒸着装置においては、蒸
気回収板11全体を一様に加熱して蒸着膜13を溶融す
る場合、まず最初に蒸気回収板11と蒸着膜13との接
触部が溶融するため、蒸着膜の自重により剥離して落下
してしまい、るつぼ内にうまく回収できない。また、蒸
着膜が剥離しないまでも蒸着物質の表面張力並びに比重
が大きい場合や回収板との濡れ性が小さい場合には、回
収板の付着物質の溶融による液滴が蒸気回収板の傾斜面
に沿って流下するに従い液滴が成長し、落下限界重量よ
りも大きくなると蒸気回収板から滴下してしまい連続的
に液化回収できず、装置を長時間連続して運転できない
という問題があった。(Problem to be Solved by the Invention) However, in such a conventional vacuum evaporation apparatus, when the entire vapor recovery plate 11 is heated uniformly to melt the vapor deposited film 13, the vapor recovery plate 11 and the vapor deposition film 13 are first heated. Since the contact portion with the vapor-deposited film 13 melts, the vapor-deposited film peels off due to its own weight and falls, and cannot be properly collected into the crucible. In addition, even if the vapor deposited film does not peel off, if the surface tension and specific gravity of the vapor deposited substance are high or the wettability with the recovery plate is low, droplets due to melting of the substance adhered to the recovery plate may fall onto the slope of the vapor recovery plate. The droplets grow as they flow down, and if they exceed the falling weight limit, they will drop from the vapor recovery plate, making it impossible to continuously liquefy and recover the vapor, which poses a problem in that the device cannot be operated continuously for long periods of time.
本発明は蒸気回収板に付着した蒸着物質を確実に連続し
て液化回収でき、もって長時間連続運転が可能で、経済
的に有利な真空蒸着装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an economically advantageous vacuum evaporation apparatus that can reliably and continuously liquefy and recover evaporated substances adhering to a vapor recovery plate, thereby enabling continuous operation for a long period of time.
[発明の構成]
(課題を解決するための手段)
上記の目的を達成するため、第1の発明では真空槽内に
蒸着物質を収納したるつぼを配設し、電子ビームの照射
により前記蒸着物質を加熱、蒸発させ、その金属蒸気を
るつぼ上方に設けられた基板上に付着させて蒸着膜を形
成し、且つ前記基板とは異なる位置に設けられた蒸気回
収板に前記基板方向とは異なる方向に蒸発する金属蒸気
を付着させると共にこの蒸着物質を加熱、溶融して回収
するようにした真空蒸着装置において、前記蒸気回収板
を複数の領域に区分してその各領域を異なる温度に加熱
する加熱手段を設け、この加熱手段を制御して前記各領
域の温度分布を周期的に変化させる制御手段を設けるよ
うにしたものである。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, in the first invention, a crucible containing a vapor deposition material is disposed in a vacuum chamber, and the vapor deposition material is melted by irradiation with an electron beam. is heated and evaporated, and the metal vapor is deposited on a substrate provided above the crucible to form a vapor deposited film, and the metal vapor is deposited on a vapor recovery plate provided at a position different from the substrate in a direction different from the direction of the substrate. In a vacuum evaporation apparatus that deposits metal vapor to be evaporated on the surface and recovers the vaporized material by heating and melting the vapor, the vapor recovery plate is divided into a plurality of regions and each region is heated to a different temperature. A control means is provided for controlling the heating means and periodically changing the temperature distribution in each region.
また、第2の発明では真空槽内に蒸着物質を収納したる
つぼを配設し、電子ビームの照射により前記蒸着物質を
加熱、蒸発させ、その金属蒸気をるつぼ上方に設けられ
た基板上に付着させて蒸着膜を形成し、且つ前記基板と
は異なる位置に設けられた蒸気回収板に前記基板方向と
は異なる方向に蒸発する金属蒸気を付着させると共にこ
の蒸着物質を加熱、溶融して回収するようにした真空蒸
着装置において、前記蒸気回収板の下面に適宜の距離を
存して対向させ、該蒸気回収板の蒸着物質の溶融により
生じる液滴が落下限界重量のときの液滴径よりも小さな
間隔の網目を有する網体を設けるようにしたものである
。Further, in the second invention, a crucible containing a vapor deposition material is disposed in a vacuum chamber, the vapor deposition material is heated and evaporated by irradiation with an electron beam, and the metal vapor is deposited on a substrate provided above the crucible. metal vapor that evaporates in a direction different from the direction of the substrate is deposited on a vapor recovery plate provided at a position different from the substrate, and this vapor deposition material is heated, melted, and recovered. In such a vacuum evaporation apparatus, the vapor recovery plate is arranged to face the lower surface of the vapor recovery plate at an appropriate distance, and the droplets formed by melting the vapor deposition material on the vapor recovery plate have a droplet diameter that is larger than the droplet diameter when the droplet weight is the falling limit weight. A mesh body having meshes with small intervals is provided.
(作用)
上記第1の発明による真空蒸着装置にあっては、蒸気回
収板に区分される領域を例えば高温領域(蒸着物質の融
点以上で沸点以下の温度領域)、中湿度領域(蒸着物質
の融点より例えば10〜20deg程度低い温度領域)
、低温領域(蒸着物質の融点より例えば30〜50 d
eg程度低い温度領域)として各領域の加熱手段を周期
的に制御することにより、高温領域の蒸着膜だけが液化
しても、他の領域の蒸着膜は液化しないので、蒸着膜が
その自重により蒸気回収板から剥離して落下するような
ことがなくなり、連続的な液化回収が可能となる。(Function) In the vacuum evaporation apparatus according to the first invention, the regions divided by the vapor recovery plate are, for example, a high temperature region (temperature region above the melting point of the evaporation material and below the boiling point), a medium humidity region (a region with a temperature above the melting point of the evaporation material and below the boiling point of the evaporation material), Temperature range, for example, about 10 to 20 degrees lower than the melting point)
, low temperature region (e.g. 30 to 50 d below the melting point of the vapor deposition material)
By periodically controlling the heating means of each region as a low temperature region (e.g. low temperature region), even if only the deposited film in the high temperature region liquefies, the deposited film in other regions does not liquefy. This eliminates the possibility of the vapor separating from the vapor recovery plate and falling, allowing continuous liquefaction recovery.
また、第2の発明による真空蒸着装置にあっては、蒸気
回収板の蒸着物質の溶融により生じる液滴が落下限界重
量よりも大きくなって蒸気回収板から滴下しても、蒸気
回収板の下方に設けられた網体の網目の間隔が液滴径に
比べて小さいので、液滴はこの網体の傾斜に沿って移動
することになり、連続的な液化回収が可能となる。In addition, in the vacuum evaporation apparatus according to the second aspect of the invention, even if a droplet generated by melting the vapor deposition material on the vapor recovery plate becomes larger than the falling limit weight and drops from the vapor recovery plate, the liquid droplet will not fall below the vapor recovery plate. Since the distance between the meshes of the mesh provided in the mesh is smaller than the droplet diameter, the droplets move along the slope of the mesh, making continuous liquefaction recovery possible.
(実施例) 以下本発明の実施例を図面を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
第1図は本発明の第1の実施例における要部、つまり蒸
気回収板のみを示す斜視図であり、また第2図は第1図
の■−■線に沿う矢視断面図である。なお、真空蒸着装
置としての他の構成は第5図と同様なので、ここではそ
の説明を省略する。FIG. 1 is a perspective view showing only the main part of the first embodiment of the present invention, that is, a steam recovery plate, and FIG. 2 is a sectional view taken along the line 1--2 in FIG. Note that the other configuration of the vacuum evaporation apparatus is the same as that shown in FIG. 5, so the explanation thereof will be omitted here.
第1の実施例では第5図の基板5の上方から斜め下方に
傾斜させて左右対称に配設されるに蒸気回収板21とし
て、傾斜面と直交する方向に複数の小面積領域22が形
成されるように区分して、各領域22にその領域を加熱
するための図示しない独立したヒータがそれぞれ設けら
れている。また、各独立ヒータは図示しない制御手段に
より電源出力を周期的に変化させて異なる温度に制御可
能になっている。In the first embodiment, a plurality of small-area regions 22 are formed as a vapor recovery plate 21 in a direction perpendicular to the inclined surface, which is arranged symmetrically and inclined diagonally downward from above the substrate 5 in FIG. Each region 22 is provided with an independent heater (not shown) for heating the region. Furthermore, each independent heater can be controlled to different temperatures by periodically changing the power output by a control means (not shown).
このような構成の蒸気回収板21において、各領域のヒ
ータの温度制御条件を設定し、例えば高温領域部22a
を蒸着物質の融点以上で沸点以下の温度分布、中温領域
部22bを蒸着物質の融点よりやや低い例えば10〜2
0deg程度低い温度分布、低温領域部22cを蒸着物
質の融点より低い例えば30〜50deg程度低い温度
分布となるように制御手段により各領域のヒータを制御
すると、高温領域部22aに付着した蒸着膜は溶融、液
化して傾斜面に沿って流下する。この場合、高温領域部
22aは傾斜方向と直交する方向に区分された細長い小
面積となっており、この領域部の蒸着量が少ないので、
蒸着膜の自重により蒸気回収板21から剥離してるつぼ
内に落下し、蒸着状態を乱すようなことはない。In the steam recovery plate 21 having such a configuration, the temperature control conditions of the heaters in each area are set, for example, the high temperature area part 22a.
The temperature distribution is above the melting point and below the boiling point of the vapor deposition material, and the medium temperature region 22b is slightly lower than the melting point of the vapor deposition material, for example 10 to 2
When the heaters in each region are controlled by the control means so that the temperature distribution is about 0 degrees lower, and the temperature distribution in the low temperature region 22c is lower than the melting point of the vapor deposition material, for example, about 30 to 50 degrees, the vapor deposited film attached to the high temperature region 22a is It melts and liquefies and flows down the slope. In this case, the high temperature region 22a has a small elongated area divided in a direction perpendicular to the inclination direction, and the amount of vapor deposition in this region is small.
There is no possibility that the vapor-deposited film will peel off from the vapor recovery plate 21 due to its own weight and fall into the crucible, thereby disturbing the vapor-deposition state.
このような高温領域部22a、中温領域部22bおよび
低温領域部22cを回収時間に応じた周期で変化させる
ことにより、各領域の温度分布は高温−低温一中温一高
温と変化する。したがって、蒸着膜の溶融領域が順次傾
斜方向に移動するので、蒸気回収板21に付着した蒸着
膜を剥離落下させることなく、確実に回収することがで
きる。By changing the high temperature region 22a, medium temperature region 22b, and low temperature region 22c at a cycle according to the recovery time, the temperature distribution in each region changes from high temperature to low temperature to medium temperature to high temperature. Therefore, since the melted region of the vapor deposited film sequentially moves in the oblique direction, the vapor deposited film attached to the vapor recovery plate 21 can be reliably recovered without peeling off and falling.
次に本発明の第2の実施例を第3図および第4図を参照
して説明する。Next, a second embodiment of the present invention will be described with reference to FIGS. 3 and 4.
第3図は本発明の第2の実施例における要部、つまり蒸
気回収部を示す斜視図であり、また第4図は第3図のI
V−IV線に沿って断面した部分拡大図である。なお、
真空蒸着装置としての他の構成は第5図と同様なので、
ここではその説明を省略する。第2の実施例では第5図
の基板5の上方から斜め下方に傾斜させて左右対称に配
設された蒸気回収板31の下面に対向させて蒸着物質の
液滴に濡れにくい材質または濡れにくい表面状態に形成
された網体32を設けるようにしたものである。FIG. 3 is a perspective view showing the main part, that is, the steam recovery section, in the second embodiment of the present invention, and FIG. 4 is a perspective view showing the I of FIG.
It is a partially enlarged view taken in section along the V-IV line. In addition,
The other configuration of the vacuum evaporation apparatus is the same as that shown in Fig. 5, so
The explanation thereof will be omitted here. In the second embodiment, a material is made of a material that is difficult to get wet with droplets of vapor deposition material or is made to face the lower surface of a vapor recovery plate 31 that is arranged symmetrically and inclined diagonally downward from above the substrate 5 in FIG. A mesh body 32 formed on the surface is provided.
この場合、網体32の網目11は蒸気回収板31の蒸着
物質の溶融により生じる液滴が成長して落下限界重量に
なったときの液滴径d crttよりも小さな間隔にし
てあり、また蒸気回収板31との対向間距離りは液滴径
dcrit以上にしである。このようにした理由は次の
通りである。In this case, the meshes 11 of the mesh body 32 are arranged at intervals smaller than the droplet diameter dcrtt when the droplets generated by melting the vapor-deposited substance on the vapor recovery plate 31 grow and reach the falling limit weight, and the The distance between the opposite sides of the collection plate 31 is equal to or larger than the droplet diameter dcrit. The reason for doing this is as follows.
(1)網体32と蒸気回収板31との対向距離が液滴径
d critよりも小さいと、蒸気回収板31に付着し
た液滴がその傾斜面に沿って流下するに従い成長するが
、このときd critまで成長する前に網体32に触
れてしまい、網体32と蒸気回収板31との間に挾まっ
てしまう。この場合、条件によっては液滴が動けなくな
り、目詰まりしてしまい、蒸着物質を連続的に回収でき
なくなってしまう。(1) If the facing distance between the net body 32 and the vapor recovery plate 31 is smaller than the droplet diameter d crit, the droplets attached to the vapor recovery plate 31 will grow as they flow down along the inclined surface. In some cases, it touches the net 32 before it grows to d crit and becomes trapped between the net 32 and the steam recovery plate 31. In this case, depending on the conditions, the droplets may become stuck and become clogged, making it impossible to continuously collect the deposited material.
(2)また、網体32と蒸気回収板31との対向距離が
あまり大きすぎると、液滴が成長しd critを越え
て蒸気回収板31から離脱した場合、液滴が網体32上
に到達した時の速度が大きくなり過ぎ、網体上に落ちた
とき液滴が飛散してしまい、連続的に蒸着物質の回収が
できくなる。(2) Furthermore, if the facing distance between the mesh body 32 and the vapor recovery plate 31 is too large, the droplets will grow and leave the vapor recovery plate 31 beyond d crit. The velocity upon reaching the net becomes too high, and the droplets scatter when they fall onto the net, making it impossible to continuously collect the deposited material.
上記(1)、(2)のような理由から網体32と蒸気回
収板31との対向距離りを、d crit< L< 3
d erit程度にとれば、目詰まりすることもなく
、例え蒸気回収板31に付着した蒸着物質の液滴が網体
32上に落下したとしても、網体32の網目の間隔1.
はd critよりも小さくしておくことにより、液滴
の表面張力により網体32より下方に落下することはな
い。For the reasons (1) and (2) above, the facing distance between the net body 32 and the vapor recovery plate 31 is determined as d crit<L<3
If the spacing between the meshes of the mesh body 32 is set to about 1.5 mm, no clogging will occur, and even if droplets of the vapor deposition material adhering to the vapor recovery plate 31 fall onto the mesh body 32, the distance between the meshes of the mesh body 32 will be 1.
By setting d crit to be smaller than d crit , the droplet does not fall downward from the net body 32 due to the surface tension of the droplet.
このような構成の網体32を蒸気回収板の下面に対向さ
せて設けることにより次のような作用効果が得られる。By providing the mesh body 32 having such a configuration so as to face the lower surface of the steam recovery plate, the following effects can be obtained.
即ち、基板方向とは異なる方向に金属蒸気が上昇すると
、この金属蒸気は網体32の網目を通過して蒸気回収板
31の下面に付着し、その付着物質は図示しない加熱手
段による加熱により液体状態となる。この液体は蒸気回
収板31の傾斜面に沿って流下するに従い、液滴33と
なって成長し、やがてこの液滴33が落下限界重量we
rltよりも大きくなると、蒸気回収板31の下面を離
脱し、網体32上に落下する。しかし、この網体32の
網目の間隔1.は落下時の液滴径d crttよりも小
さくなっているので、液滴33の表面張力により網体3
2から下方に落下することはない。また、液滴33と網
体32との接触面積は小さく、しかも網体自体は液滴と
の濡れ性が小さいため、液滴33は網体32上をその傾
斜に沿って滑るように移動し、速やかに蒸着物質を連続
的に回収することができる。That is, when the metal vapor rises in a direction different from the direction of the substrate, the metal vapor passes through the mesh of the net member 32 and adheres to the lower surface of the vapor recovery plate 31, and the attached substance is heated by a heating means (not shown) to become a liquid. state. As this liquid flows down along the slope of the vapor recovery plate 31, it becomes a droplet 33 and grows, and eventually the droplet 33 reaches the falling limit weight we.
When it becomes larger than rlt, it leaves the lower surface of the steam recovery plate 31 and falls onto the net body 32. However, the mesh spacing of this mesh body 32 is 1. is smaller than the droplet diameter d crtt when falling, so the surface tension of the droplet 33 causes the net 3
It will not fall downward from 2. Furthermore, since the contact area between the droplets 33 and the net 32 is small, and the net itself has low wettability with the droplets, the droplets 33 slide on the net 32 along its slope. , the deposited material can be rapidly and continuously recovered.
なお、上記各実施例では蒸気回収板に付着した蒸着物質
をるつぼに回収する場合について述べたが、蒸気回収板
の傾斜面に沿って流下する液滴を別途に配設された蒸気
回収装置に回収するようにしてもよい。In each of the above embodiments, a case has been described in which the vapor deposition material adhering to the vapor recovery plate is collected into a crucible, but droplets flowing down along the slope of the vapor recovery plate are collected in a separately installed vapor recovery device. It may be collected.
〔発明の効果]
以上述べたように本発明によれば、蒸気回収板に付着し
た蒸着物質を確実に連続して液化回収して再び蒸着に利
用することができるので、装置の長時間連続運転が可能
となるとともに、経済的にも有利な真空蒸着装置を提供
することができる。[Effects of the Invention] As described above, according to the present invention, the vapor deposition material attached to the vapor recovery plate can be reliably and continuously liquefied and recovered and used for vapor deposition again, so that long-term continuous operation of the apparatus is possible. This makes it possible to provide an economically advantageous vacuum evaporation apparatus.
第1図は本発明による真空蒸着装置の第1の実施例にお
ける蒸気回収板を示す斜視図、第2図は第1図の■−■
線に沿う矢視断面図、第3図は本発明の第2の実施例に
おける蒸気回収部を示す斜視図、第4図は第3図のIV
−IV線に沿って断面した部分拡大図、第5図は従来の
真空蒸着装置の一例を模式的に示す概略構成図である。
1・・・真空槽、2・・・蒸気封入器、3・・・蒸着物
質、4・・・るつぼ、5・・・基板、6・・・電子銃、
7・・・電子ビーム、8.10・・・蒸気流、21.3
1・・・蒸気回収板、32・・・網体。
出願人代理人 弁理士 鈴江武彦
第
図FIG. 1 is a perspective view showing a vapor recovery plate in a first embodiment of the vacuum evaporation apparatus according to the present invention, and FIG. 2 is a perspective view of the vapor recovery plate shown in FIG.
3 is a perspective view showing a steam recovery section in the second embodiment of the present invention, and FIG. 4 is a sectional view taken along the line shown in FIG.
FIG. 5 is a partially enlarged cross-sectional view taken along line -IV, and is a schematic configuration diagram schematically showing an example of a conventional vacuum evaporation apparatus. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Steam enclosure, 3... Vapor deposition substance, 4... Crucible, 5... Substrate, 6... Electron gun,
7...Electron beam, 8.10...Vapor flow, 21.3
1... Steam recovery plate, 32... Net body. Applicant's agent Patent attorney Takehiko Suzue
Claims (2)
電子ビームの照射により前記蒸着物質を加熱、蒸発させ
、その金属蒸気をるつぼ上方に設けられた基板上に付着
させて蒸着膜を形成し、且つ前記基板とは異なる位置に
設けられた蒸気回収板に前記基板方向とは異なる方向に
蒸発する金属蒸気を付着させると共にこの蒸着物質を加
熱、溶融して回収するようにした真空蒸着装置において
、前記蒸気回収板を複数の領域に区分してその各領域を
異なる温度に加熱する加熱手段を設け、この加熱手段を
制御して前記各領域の温度分布を周期的に変化させる制
御手段を設けたことを特徴とする真空蒸着装置。(1) A crucible containing a vapor deposition substance is placed in a vacuum chamber,
heating and evaporating the vapor deposition material by irradiation with an electron beam, and depositing the metal vapor on a substrate provided above the crucible to form a vapor deposition film; and a vapor recovery plate provided at a position different from the substrate. In a vacuum evaporation apparatus, the vapor recovery plate is divided into a plurality of regions, and the vapor recovery plate is divided into a plurality of regions. A vacuum evaporation apparatus characterized in that a heating means for heating regions to different temperatures is provided, and a control means is provided for controlling the heating means to periodically change the temperature distribution of each region.
電子ビームの照射により前記蒸着物質を加熱、蒸発させ
、その金属蒸気をるつぼ上方に設けられた基板上に付着
させて蒸着膜を形成し、且つ前記基板とは異なる位置に
設けられた蒸気回収板に前記基板方向とは異なる方向に
蒸発する金属蒸気を付着させると共にこの蒸着物質を加
熱、溶融して回収するようにした真空蒸着装置において
、前記蒸気回収板の下面に適宜の距離を存して対向させ
、該蒸気回収板の蒸着物質の溶融により生じる液滴が落
下限界重量のときの液滴径よりも小さな間隔の網目を有
する網体を設けたことを特徴とする真空蒸着装置。(2) A crucible containing a vapor deposition substance is placed in a vacuum chamber,
heating and evaporating the vapor deposition material by irradiation with an electron beam, and depositing the metal vapor on a substrate provided above the crucible to form a vapor deposition film; and a vapor recovery plate provided at a position different from the substrate. In a vacuum evaporation apparatus in which a metal vapor is deposited on a metal vapor that evaporates in a direction different from the direction of the substrate, and the vapor-deposited material is heated, melted, and recovered, an appropriate distance is provided on the lower surface of the vapor recovery plate. 1. A vacuum evaporation apparatus, characterized in that a net body is provided facing the vapor recovery plate and having a mesh having a smaller interval than the droplet diameter when the droplet generated by melting the vapor deposition substance on the vapor recovery plate has a fall limit weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17860390A JPH0466662A (en) | 1990-07-06 | 1990-07-06 | Vacuum vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17860390A JPH0466662A (en) | 1990-07-06 | 1990-07-06 | Vacuum vapor deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0466662A true JPH0466662A (en) | 1992-03-03 |
Family
ID=16051342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17860390A Pending JPH0466662A (en) | 1990-07-06 | 1990-07-06 | Vacuum vapor deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0466662A (en) |
-
1990
- 1990-07-06 JP JP17860390A patent/JPH0466662A/en active Pending
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