JPH04285158A - Vacuum deposition device - Google Patents

Vacuum deposition device

Info

Publication number
JPH04285158A
JPH04285158A JP4715091A JP4715091A JPH04285158A JP H04285158 A JPH04285158 A JP H04285158A JP 4715091 A JP4715091 A JP 4715091A JP 4715091 A JP4715091 A JP 4715091A JP H04285158 A JPH04285158 A JP H04285158A
Authority
JP
Japan
Prior art keywords
vapor
vapor deposition
plate
crucible
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4715091A
Other languages
Japanese (ja)
Inventor
Yoshio Hashidate
良夫 橋立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP4715091A priority Critical patent/JPH04285158A/en
Publication of JPH04285158A publication Critical patent/JPH04285158A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To surely and continuously liquify and recover the stuck vapor deposition substance by providing a vapor recovering plate in the position different from a base plate in a vacuum tank, and forming a groove continuously changed into a circular shape from a circular arc shape along inclination on the surface of the vapor recovering plate. CONSTITUTION:A vapor deposition film is formed in a vacuum tank by heating and vaporizing the vapor deposition substance housed in a crucible by irradiation of electron beams and sticking this vapor on the base plate arranged to the upside of the crucible. In the vacuum deposition device, a vapor recovering plate 21 is provided in the position different form the base plate. Unavailable vapor flow 10 vaporized in the direction different from the base plate is stuck on the surface of the vapor recovering plate 21. Thereafter, this vapor deposition substance is heated, melted and recovered. A plurality of pieces of groove continuously changed into a circular shape from a circular arc shape are formed along the downside from the upside of inclination on the recovery surface of the vapor recovering plat 21. Thereby, when the stuck vapor deposition substance is heated and melted, droplets of liquid flow down along the grooves and are recovered without separation and dropping. The device is continuously operated for a long time.

Description

【発明の詳細な説明】[Detailed description of the invention]

[発明の目的] [Purpose of the invention]

【0001】0001

【産業上の利用分野】本発明は電子ビーム加熱方式の真
空蒸着装置において、特に基板以外に付着して無効とな
った蒸着物質を連続的に安定して回収し、再び蒸着に利
用することにより、装置の運転効率および経済性を向上
させるようにした真空蒸着装置に関する。
[Industrial Application Field] The present invention is directed to an electron beam heating type vacuum evaporation apparatus, in particular, by continuously and stably recovering the evaporation material that has become ineffective due to adhesion to other than the substrate, and reusing it for evaporation. , relates to a vacuum evaporation apparatus that improves operating efficiency and economical efficiency of the apparatus.

【0002】0002

【従来の技術】従来、例えば半導体成膜処理の開発では
一般的に真空蒸着による薄膜生成技術が採用されている
2. Description of the Related Art Conventionally, for example, in the development of semiconductor film forming processes, thin film forming techniques using vacuum evaporation have generally been employed.

【0003】この薄膜生成技術は蒸着物質を真空中で蒸
気化して基板に蒸着させるものであり、物質を蒸発させ
る手段としては特に電子ビーム加熱方式が発生,制御等
に係わる技術的簡易性および経済的に有利であるという
理由から広く使用されている。
[0003] This thin film production technology involves vaporizing a deposition material in a vacuum and depositing it on a substrate. As a means of vaporizing the material, an electron beam heating method is particularly advantageous due to its technical simplicity and economy in terms of generation and control. It is widely used because of its advantages.

【0004】図6はかかる電子ビーム加熱方式による真
空蒸着装置の概略構成例を模式的に示したものである。 図6において、真空槽1は図示しない真空排気装置によ
り所定の真空度(10−5〜10−6Torr)に保持
されている。この真空槽1内には、上部から下部方向に
狭まるように傾斜する周壁面を有する蒸気封入容器2が
設けられており、この蒸気封入容器2の下部には蒸着物
質3を収納したるつぼ4が設置され、その上方に蒸着す
べき基板5が図示していない支持体に支持されて設けら
れている。また、るつぼ4の一側方に電子銃6が配設さ
れ、この電子銃6から発射された電子ビーム7を蒸着物
質3に照射することにより蒸着物質3を加熱,蒸発せし
めて蒸気流8を生成させる。この場合、るつぼ4には冷
却パイプ9が埋設されており、加熱時に冷却水を流して
るつぼ4が高温になり過ぎて溶融しないようにしてある
FIG. 6 schematically shows an example of a schematic configuration of a vacuum evaporation apparatus using such an electron beam heating method. In FIG. 6, the vacuum chamber 1 is maintained at a predetermined degree of vacuum (10-5 to 10-6 Torr) by an evacuation device (not shown). This vacuum chamber 1 is provided with a steam enclosure 2 having a circumferential wall surface that is inclined to narrow from the top to the bottom, and a crucible 4 containing a vapor deposition substance 3 is provided at the bottom of the vapor enclosure 2. A substrate 5 to be vapor-deposited is placed above the substrate 5 and supported by a support (not shown). Further, an electron gun 6 is disposed on one side of the crucible 4, and by irradiating the vapor deposition material 3 with an electron beam 7 emitted from the electron gun 6, the vapor deposition material 3 is heated and evaporated to form a vapor flow 8. Generate. In this case, a cooling pipe 9 is embedded in the crucible 4 to prevent the crucible 4 through which cooling water is passed during heating from becoming too high and melting.

【0005】また、基板5の上方には基板5とは異なる
方向に蒸発する蒸気流10を回収するための2個の蒸気
回収板11が基板5の上方部から斜め下方に傾斜させて
左右対称に配設され、図示していない支持部材により支
持されている。従って、このような構成の真空蒸着装置
において、るつぼ4に収納された蒸着物質3に電子銃6
により電子ビーム7を照射して該蒸着物質3を加熱,蒸
発させると蒸気流が生成されて拡散し、基板方向に上昇
する蒸気流8は基板5に衝突すると該基板5上に蒸着膜
12が形成され、また基板5方向とは方向とは異なる方
向に蒸発する蒸気流10が蒸気回収板11に衝突すると
、該蒸気回収板11に蒸着膜13が形成される。この蒸
気回収板11に形成された蒸着膜13は蒸気回収板11
全体を図示しない熱源で蒸着物質の溶融点以上の温度で
一様に加熱させることにより、溶融,液化し、これを蒸
気回収板11の下面の傾斜面に沿って流下させ、蒸気封
入容器2の壁面に伝わってるつぼ4内に回収するように
している。
Further, above the substrate 5, two vapor recovery plates 11 for recovering the vapor flow 10 that evaporates in a direction different from that of the substrate 5 are arranged symmetrically so as to be inclined obliquely downward from the upper part of the substrate 5. , and is supported by a support member (not shown). Therefore, in the vacuum evaporation apparatus having such a configuration, the electron gun 6 is applied to the evaporation material 3 housed in the crucible 4.
When the vapor deposition material 3 is heated and evaporated by irradiation with an electron beam 7, a vapor flow is generated and diffused, and when the vapor flow 8 rising toward the substrate collides with the substrate 5, a vapor deposition film 12 is formed on the substrate 5. When the vapor flow 10 that is formed and evaporates in a direction different from the direction of the substrate 5 impinges on the vapor recovery plate 11, a vapor deposited film 13 is formed on the vapor recovery plate 11. The vapor deposited film 13 formed on this vapor recovery plate 11 is
By uniformly heating the entire body at a temperature higher than the melting point of the vapor deposition material using a heat source (not shown), it is melted and liquefied, and this is caused to flow down along the sloped surface of the lower surface of the vapor recovery plate 11 to form the vapor enclosure container 2. The liquid is transmitted to the wall and collected into the crucible 4.

【0006】[0006]

【発明が解決しようとする課題】しかし、このような従
来の真空蒸着装置においては、蒸気回収板11全体を一
様に加熱して蒸着膜13を溶融する場合、まず最初に蒸
気回収板11と蒸着膜13との接触部が溶融するため蒸
着膜の自重により剥離して落下してしまったり、蒸着膜
が剥離しないまでも蒸着物質の表面張力ならびに比重が
大きい場合や回収板との濡れ性が小さい場合には、回収
板の蒸着物質の溶融による液滴が蒸気回収板の傾斜面に
沿って流下するに従い液滴が成長し、落下限界重量より
も大きくなると蒸気回収板から滴下してしまい、連続的
に液化回収できず、装置を長時間連続して運転できない
という問題があった。
[Problems to be Solved by the Invention] However, in such a conventional vacuum evaporation apparatus, when the entire vapor recovery plate 11 is uniformly heated to melt the vapor deposited film 13, the vapor recovery plate 11 and Because the contact area with the vapor deposited film 13 melts, the vapor deposited film may peel off due to its own weight and fall, or even if the vapor deposited film does not peel off, the surface tension and specific gravity of the vapor deposited material may be high, or the wettability with the collection plate may be poor. If the droplet is small, the droplet will grow as it flows down the slope of the vapor recovery plate due to the melting of the vapor deposited material on the recovery plate, and if it becomes larger than the falling limit weight, it will drip from the vapor recovery plate. There was a problem that continuous liquefaction and recovery could not be performed and the equipment could not be operated continuously for a long time.

【0007】本発明は上記事情に鑑みてなされたもので
、その目的は蒸気回収板に付着した蒸着物質を確実に連
続して液化回収でき、もって長時間連続運転が可能で経
済的に有利な真空蒸着装置を提供することにある。 [発明の構成]
The present invention has been made in view of the above circumstances, and its purpose is to reliably and continuously liquefy and recover the vapor deposited substances adhering to the vapor recovery plate, thereby enabling continuous operation for a long period of time and providing an economically advantageous method. An object of the present invention is to provide a vacuum evaporation device. [Structure of the invention]

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明は真空槽内に蒸着物質を収納したるつぼを配
設し、電子ビームの照射により前記蒸着物質を加熱,蒸
発させ、その金属蒸気をるつぼ上方に設けた基板上に付
着させて蒸着膜を形成し、また前記基板とは異なる位置
に設けられた蒸気回収板に前記基板とは異なる方向に蒸
発する金属蒸気を付着させると共にこの蒸着物質を加熱
・溶融して回収するように構成した真空蒸着装置におい
て、前記蒸気回収板の回収表面に傾斜面上方側から下方
側に沿って円弧状から円状に連続的に変化させた溝を複
数本形成させたことを特徴とするものである。
[Means for Solving the Problems] In order to achieve the above object, the present invention disposes a crucible containing a vapor deposition material in a vacuum chamber, heats and evaporates the vapor deposition material by irradiation with an electron beam, and then evaporates the vapor deposition material. The metal vapor is deposited on a substrate provided above the crucible to form a vapor deposited film, and the metal vapor that evaporates in a direction different from that of the substrate is deposited on a vapor recovery plate provided at a position different from the substrate. In a vacuum evaporation apparatus configured to heat and melt the vapor deposition material and recover it, the recovery surface of the vapor recovery plate has a slope that changes continuously from an arc shape to a circular shape from the upper side to the lower side. It is characterized in that a plurality of grooves are formed.

【0009】[0009]

【作用】本発明による真空蒸着装置は、基板方向に蒸発
する金属蒸気フラックスの大きい蒸気回収板上方側では
円弧状であるが液滴はまだ成長初期段階であるため滴下
することはなく、蒸気回収板の傾斜面に沿って流下する
に従い液滴が成長しても傾斜面に沿って溝の形状が円状
となっているため、液滴は蒸気回収板表面から離脱滴下
することがなくなり、連続的な液化回収が可能となる。
[Operation] In the vacuum evaporation apparatus according to the present invention, the metal vapor flux evaporating toward the substrate is arcuate on the upper side of the vapor recovery plate, but since the droplets are still in the early stage of growth, they do not drip, and the vapor recovery plate is arcuate. Even if the droplets grow as they flow down the slope of the plate, the shape of the groove along the slope is circular, so the droplets will not separate from the surface of the steam recovery plate and will continue to flow. liquefaction recovery becomes possible.

【0010】0010

【実施例】以下、本発明の実施例を図面を参照して説明
する。
Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.

【0011】図1は本発明の一実施例である真空蒸着装
置の蒸気回収板の斜視図であり、また図2は図1のA矢
視方向からみた図、図3は図1のB−B線に沿った部分
断面図、図4は図1のC−C線に沿った部分断面図、図
5はD−D線に沿った部分断面図である。なお、蒸気回
収板以外の構成は既に説明した図6の従来の真空蒸着装
置と同様であるので、その説明は省略するものとする。
FIG. 1 is a perspective view of a vapor recovery plate of a vacuum evaporation apparatus according to an embodiment of the present invention, FIG. 2 is a view seen from the direction of arrow A in FIG. 1, and FIG. 4 is a partial sectional view taken along line B, FIG. 4 is a partial sectional view taken along line CC in FIG. 1, and FIG. 5 is a partial sectional view taken along line DD. Note that the configuration other than the vapor recovery plate is the same as that of the conventional vacuum evaporation apparatus shown in FIG. 6, which has already been explained, so the explanation thereof will be omitted.

【0012】本実施例の蒸気回収板21は図6で示す従
来の蒸気回収板11の代わりとして用いたものである。 すなわち、2個の蒸気回収板21は基板の上方から斜め
下方に傾斜させて左右対称に配置されており、この蒸気
回収板21には無効蒸気の蒸着膜を加熱し液化するため
の図示しないヒータが設けられている。また蒸気回収板
21の回収表面には上方側から下方側に沿って溝を形成
しており、この溝は、図2〜図4に示したように、平面
に近い円弧状(中心角10°)の溝からだんだん円状に
なるように形成された溝(22a,22b,22c)が
複数本設けられている。
The steam recovery plate 21 of this embodiment is used in place of the conventional steam recovery plate 11 shown in FIG. That is, the two vapor recovery plates 21 are arranged symmetrically and inclined diagonally downward from above the substrate, and the vapor recovery plates 21 are equipped with a heater (not shown) for heating and liquefying the vapor deposited film of ineffective vapor. is provided. Further, a groove is formed on the recovery surface of the steam recovery plate 21 from the upper side to the lower side, and this groove has a near-plane arc shape (center angle 10°) as shown in FIGS. 2 to 4. A plurality of grooves (22a, 22b, 22c) are provided which are formed to gradually become circular from the groove in ).

【0013】本実施例では、このような溝を備えた蒸気
回収板21を設けることにより次のような作用効果を得
ることができる。すなわち、基板方向とは異なる方向に
金属蒸気が上昇し、蒸気回収板21の下向き面に付着し
、その付着膜は図示しない加熱手段による加熱により液
化または凝縮する。この液体は傾斜させてある蒸気回収
板21の溝22a,22b,22cに沿って流下するの
に従い、液滴となり成長するが、この溝は下方にいくに
従い円状に近く(弧の中心角350°)なっているため
成長しても液滴はその途中で回収板21から離脱滴下す
ることないので、蒸着物質を連続的に回収することがで
きる。本発明は上記実施例に限定されるものではなく、
その要旨を変更しない範囲で種々変形して実施できるこ
とは勿論である。
In this embodiment, by providing the steam recovery plate 21 with such grooves, the following effects can be obtained. That is, metal vapor rises in a direction different from the substrate direction and adheres to the downward surface of the vapor recovery plate 21, and the attached film is liquefied or condensed by heating by a heating means (not shown). As this liquid flows down along the grooves 22a, 22b, and 22c of the inclined vapor recovery plate 21, it becomes a droplet and grows. °), even if the droplet grows, it will not separate from the collection plate 21 during its growth and drop, so the deposited material can be collected continuously. The present invention is not limited to the above embodiments,
Of course, various modifications can be made without changing the gist of the invention.

【0014】[0014]

【発明の効果】以上説明したように、本発明によれば、
蒸気回収板に付着した蒸着物質を確実に連続して液化回
収し、再び蒸着に利用することができるので、装置の長
時間連続運転が可能となるとともに経済的にも有利な真
空蒸着装置を提供することができる。
[Effects of the Invention] As explained above, according to the present invention,
The vapor deposition material attached to the vapor recovery plate can be reliably and continuously liquefied and recovered and used again for vapor deposition, allowing the device to operate continuously for a long time and providing an economically advantageous vacuum vapor deposition device. can do.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の一実施例の斜視図。FIG. 1 is a perspective view of an embodiment of the present invention.

【図2】図1のA矢視方向からみた図。FIG. 2 is a view seen from the direction of arrow A in FIG. 1.

【図3】図1のB−B線に沿った部分断面図。FIG. 3 is a partial cross-sectional view taken along line BB in FIG. 1;

【図4】図1のC−C線に沿った部分断面図。FIG. 4 is a partial cross-sectional view taken along line CC in FIG. 1;

【図5】図1のD−D線に沿った断面図。FIG. 5 is a sectional view taken along line DD in FIG. 1;

【図6】従来の真空蒸着装置を模式的に表した構成図。FIG. 6 is a schematic configuration diagram of a conventional vacuum evaporation apparatus.

【符号の説明】[Explanation of symbols]

1…真空槽、2…蒸気封入容器、3…蒸着物質、4…る
つぼ、5…基板、6…電子銃、7…電子ビーム、8…蒸
気流、9…冷却パイプ、10…無効蒸気流、11…蒸気
回収板、12…蒸着膜、13…無効となった蒸着膜、2
1…蒸気回収板。
DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Vapor enclosure container, 3... Vapor deposition substance, 4... Crucible, 5... Substrate, 6... Electron gun, 7... Electron beam, 8... Vapor flow, 9... Cooling pipe, 10... Inactive vapor flow, 11... Steam recovery plate, 12... Vapor deposited film, 13... Invalid vapor deposited film, 2
1...Steam recovery plate.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】真空槽内に蒸着物質を収納したるつぼを配
設し、電子ビームの照射により前記蒸着物質を加熱,蒸
発させ、その金属蒸気をるつぼ上方に設けた基板上に付
着させて蒸着膜を形成し、また前記基板とは異なる位置
に設けられた蒸気回収板に前記基板とは異なる方向に蒸
発する金属蒸気を付着させると共にこの蒸着物質を加熱
・溶融して回収するように構成した真空蒸着装置におい
て、前記蒸気回収板の回収表面に傾斜面上方側から下方
側に沿って円弧状から円状に連続的に変化させた溝を複
数本形成させたことを特徴とする真空蒸着装置。
Claim 1: A crucible containing a vapor deposition material is disposed in a vacuum chamber, the vapor deposition material is heated and evaporated by irradiation with an electron beam, and the metal vapor is deposited on a substrate provided above the crucible for vapor deposition. A film is formed, and a metal vapor that evaporates in a direction different from that of the substrate is deposited on a vapor recovery plate provided at a position different from that of the substrate, and this evaporated material is heated and melted to be recovered. A vacuum evaporation apparatus characterized in that a plurality of grooves that continuously change from an arc shape to a circle shape are formed on the recovery surface of the vapor recovery plate from the upper side to the lower side of the inclined surface. .
JP4715091A 1991-03-13 1991-03-13 Vacuum deposition device Pending JPH04285158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4715091A JPH04285158A (en) 1991-03-13 1991-03-13 Vacuum deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4715091A JPH04285158A (en) 1991-03-13 1991-03-13 Vacuum deposition device

Publications (1)

Publication Number Publication Date
JPH04285158A true JPH04285158A (en) 1992-10-09

Family

ID=12767069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4715091A Pending JPH04285158A (en) 1991-03-13 1991-03-13 Vacuum deposition device

Country Status (1)

Country Link
JP (1) JPH04285158A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012214893A (en) * 2011-03-31 2012-11-08 Seagate Technology Llc Apparatus and vacuum system for collecting condensed vapor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012214893A (en) * 2011-03-31 2012-11-08 Seagate Technology Llc Apparatus and vacuum system for collecting condensed vapor

Similar Documents

Publication Publication Date Title
JPH03107452A (en) Method of attaching gas phase and its device
US4700660A (en) Evaporator for depositing films in a vacuum
JP2003160855A (en) Thin-film forming apparatus
KR910002567B1 (en) Carrier Gas Cluster Circles for Thermally Regulated Clusters
KR20080003720A (en) Multi-nozzle evaporation source for deposition process
US4856457A (en) Cluster source for nonvolatile species, having independent temperature control
JP2021066954A (en) Vapor deposition cell for vacuum vapor deposition chamber, and related vapor deposition method
KR101846692B1 (en) Evaporation source with Plate for Preventing Spitting
JPH06299353A (en) Continuous vacuum deposition equipment
JP7161551B2 (en) device
JP3074871B2 (en) Raw material evaporator for CVD
JPH0466662A (en) Vacuum vapor deposition apparatus
JPH05117846A (en) Vacuum deposition equipment
US3485997A (en) Process and apparatus for the thermal vaporization of mixtures of substances in a vacuum
JPH04124269A (en) Vacuum vapor deposition device
JP2013529258A (en) Side emission type linear evaporation source, manufacturing method thereof, and linear evaporator
JPH05295523A (en) Vacuum vapor deposition device
JP2781996B2 (en) High temperature steam generator
JPH0774111A (en) Steam generation and recovery device
JPH0681134A (en) Vacuum deposition device
JP3938990B2 (en) Solution vaporizer and film forming apparatus
JPS5974277A (en) Vacuum depositing apparatus
JPH0379758A (en) Vapor deposition device
JP2002332564A (en) Vacuum vapor deposition apparatus
JPH0641605Y2 (en) Thin film evaporator