JPH0467344B2 - - Google Patents

Info

Publication number: JPH0467344B2
Authority: JP; Japan
Prior art keywords: thin film; pressure sensor; insulating layer; electrode; piezoelectric
Prior art date: 1982-12-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP57231525A

Other languages

English (en)

Japanese (ja)

Other versions

JPS59124181A (ja

Inventor

Yoshuki Osada

Yutaka Hirai

Takashi Nakagiri

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Canon Inc

Original Assignee

Canon Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-12-29

Filing date

1982-12-29

Publication date

1992-10-28

1982-12-29 Application filed by Canon Inc filed Critical Canon Inc

1982-12-29 Priority to JP57231525A priority Critical patent/JPS59124181A/ja

1984-07-18 Publication of JPS59124181A publication Critical patent/JPS59124181A/ja

1992-10-28 Publication of JPH0467344B2 publication Critical patent/JPH0467344B2/ja

Status Granted legal-status Critical Current

Links

239000010409 thin film Substances 0.000 claims description 60
239000004065 semiconductor Substances 0.000 claims description 29
230000005669 field effect Effects 0.000 claims description 15
239000011159 matrix material Substances 0.000 claims description 8
238000006243 chemical reaction Methods 0.000 claims description 3
239000000758 substrate Substances 0.000 description 38
239000007789 gas Substances 0.000 description 31
238000000034 method Methods 0.000 description 27
238000005229 chemical vapour deposition Methods 0.000 description 20
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 15
238000010586 diagram Methods 0.000 description 15
239000000463 material Substances 0.000 description 14
229910021417 amorphous silicon Inorganic materials 0.000 description 11
238000004544 sputter deposition Methods 0.000 description 11
229910052581 Si3N4 Inorganic materials 0.000 description 10
239000010408 film Substances 0.000 description 10
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
238000000137 annealing Methods 0.000 description 8
239000002994 raw material Substances 0.000 description 8
229910000077 silane Inorganic materials 0.000 description 8
238000004519 manufacturing process Methods 0.000 description 7
229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
235000012239 silicon dioxide Nutrition 0.000 description 7
238000010894 electron beam technology Methods 0.000 description 6
238000005530 etching Methods 0.000 description 6
230000008569 process Effects 0.000 description 6
239000000377 silicon dioxide Substances 0.000 description 6
238000012546 transfer Methods 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
239000003990 capacitor Substances 0.000 description 5
238000000151 deposition Methods 0.000 description 5
230000000694 effects Effects 0.000 description 5
230000010287 polarization Effects 0.000 description 5
-1 polyethylene terephthalate Polymers 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
238000003860 storage Methods 0.000 description 5
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
239000011521 glass Substances 0.000 description 4
230000010354 integration Effects 0.000 description 4
238000000059 patterning Methods 0.000 description 4
238000005546 reactive sputtering Methods 0.000 description 4
239000006104 solid solution Substances 0.000 description 4
239000000243 solution Substances 0.000 description 4
235000012431 wafers Nutrition 0.000 description 4
239000011787 zinc oxide Substances 0.000 description 4
WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
230000008901 benefit Effects 0.000 description 3
AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 3
229910052980 cadmium sulfide Inorganic materials 0.000 description 3
229910001882 dioxygen Inorganic materials 0.000 description 3
238000001704 evaporation Methods 0.000 description 3
239000005350 fused silica glass Substances 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
239000011810 insulating material Substances 0.000 description 3
229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
238000005259 measurement Methods 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
230000001360 synchronised effect Effects 0.000 description 3
238000007740 vapor deposition Methods 0.000 description 3
229910052845 zircon Inorganic materials 0.000 description 3
GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
239000004642 Polyimide Substances 0.000 description 2
239000010407 anodic oxide Substances 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
230000008020 evaporation Effects 0.000 description 2
238000005224 laser annealing Methods 0.000 description 2
230000007257 malfunction Effects 0.000 description 2
238000002156 mixing Methods 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000001451 molecular beam epitaxy Methods 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
230000002093 peripheral effect Effects 0.000 description 2
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
229920000515 polycarbonate Polymers 0.000 description 2
239000004417 polycarbonate Substances 0.000 description 2
239000011112 polyethylene naphthalate Substances 0.000 description 2
229920001721 polyimide Polymers 0.000 description 2
239000002861 polymer material Substances 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
230000004044 response Effects 0.000 description 2
229910052594 sapphire Inorganic materials 0.000 description 2
239000010980 sapphire Substances 0.000 description 2
230000035945 sensitivity Effects 0.000 description 2
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
239000004698 Polyethylene Substances 0.000 description 1
229910000831 Steel Inorganic materials 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
PQCCZSBUXOQGIU-UHFFFAOYSA-N [La].[Pb] Chemical compound [La].[Pb] PQCCZSBUXOQGIU-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
150000007513 acids Chemical class 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
230000003321 amplification Effects 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
238000009530 blood pressure measurement Methods 0.000 description 1
238000004891 communication Methods 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
238000009826 distribution Methods 0.000 description 1
239000000428 dust Substances 0.000 description 1
210000002458 fetal heart Anatomy 0.000 description 1
239000012212 insulator Substances 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
238000003199 nucleic acid amplification method Methods 0.000 description 1
229920000620 organic polymer Polymers 0.000 description 1
238000004806 packaging method and process Methods 0.000 description 1
229920000573 polyethylene Polymers 0.000 description 1
229920000139 polyethylene terephthalate Polymers 0.000 description 1
239000005020 polyethylene terephthalate Substances 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
238000003825 pressing Methods 0.000 description 1
230000002265 prevention Effects 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000010453 quartz Substances 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
239000010959 steel Substances 0.000 description 1
239000013077 target material Substances 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
238000002207 thermal evaporation Methods 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1

Landscapes

Measuring Fluid Pressure (AREA)
Pressure Sensors (AREA)

JP57231525A 1982-12-29 1982-12-29 圧力センサ Granted JPS59124181A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP57231525A JPS59124181A (ja)	1982-12-29	1982-12-29	圧力センサ

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP57231525A JPS59124181A (ja)	1982-12-29	1982-12-29	圧力センサ

Publications (2)

Publication Number	Publication Date
JPS59124181A JPS59124181A (ja)	1984-07-18
JPH0467344B2 true JPH0467344B2 (de)	1992-10-28

Family

ID=16924850

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP57231525A Granted JPS59124181A (ja)	1982-12-29	1982-12-29	圧力センサ

Country Status (1)

Country	Link
JP (1)	JPS59124181A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6274029B2 (ja) *	2014-06-18	2018-02-07	大日本印刷株式会社	圧力センサ装置およびその製造方法
JP2019002776A (ja) *	2017-06-14	2019-01-10	コニカミノルタ株式会社	多点圧力センサ
CN110943156B (zh) *	2019-12-24	2021-08-24	中山大学	一种基于压电材料的压力传感器及制备方法

1982
- 1982-12-29 JP JP57231525A patent/JPS59124181A/ja active Granted

Also Published As

Publication number	Publication date
JPS59124181A (ja)	1984-07-18

Publication	Publication Date	Title
US5165283A (en)	1992-11-24	High temperature transducers and methods of fabricating the same employing silicon carbide
Royer et al.	1983	ZnO on Si integrated acoustic sensor
CA1060573A (en)	1979-08-14	Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same
US4766666A (en)	1988-08-30	Semiconductor pressure sensor and method of manufacturing the same
US4495820A (en)	1985-01-29	Capacitive pressure sensor
US5155061A (en)	1992-10-13	Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
US4771638A (en)	1988-09-20	Semiconductor pressure sensor
US4462018A (en)	1984-07-24	Semiconductor strain gauge with integral compensation resistors
EP0010204B2 (de)	1986-07-16	Halbleiter-Absolutdruck-Wandleranordnung
US4543576A (en)	1985-09-24	System for measuring electrical resistance and temperature during manufacture of thin, conductive films deposited on substrates by means of evaporation or sputter deposition
US5518951A (en)	1996-05-21	Method for making thin film piezoresistive sensor
US20090146230A1 (en)	2009-06-11	Semiconductor pressure sensor, method for producing the same, semiconductor device, and electronic apparatus
JPH0750789B2 (ja)	1995-05-31	半導体圧力変換装置の製造方法
JPH09500234A (ja)	1997-01-07	配向されて成長した焦電性の層を有するパイロ検出素子およびその製造法
US5589810A (en)	1996-12-31	Semiconductor pressure sensor and related methodology with polysilicon diaphragm and single-crystal gage elements
JPH02290524A (ja)	1990-11-30	半導体ウエーハ及びその形成法とトランスジューサ及びその製法
US5883419A (en)	1999-03-16	Ultra-thin MO-C film transistor
JPH06129933A (ja)	1994-05-13	過圧保護ポリシリコン容量性差圧センサー及びその製造方法
TW200426353A (en)	2004-12-01	Semiconductor pressure sensor
US5317922A (en)	1994-06-07	Capacitance transducer article and method of fabrication
US6691581B2 (en)	2004-02-17	Pressure transducer fabricated from beta silicon carbide
JPS59124181A (ja)	1984-07-18	圧力センサ
Chung et al.	1991	High‐performance pressure sensors using double silicon‐on‐insulator structures
JPS6257259B2 (de)	1987-11-30
JPH01136378A (ja)	1989-05-29	圧力変換装置の製造方法