JPH0469426B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a film carrier consisting of a flexible film and a large number of conductive leads fixed thereto, and a semiconductor element having a large number of protruding electrodes, which are connected by thermocompression bonding. The present invention relates to a semiconductor device using a gigantic bonding method.

Conventional Structures and Their Problems Usually, wiring within a semiconductor device is broadly divided into signal lines and power supply lines, but in the case of semiconductor devices that require a large current, voltage drop due to wiring resistance becomes a problem. Normally, wiring within a semiconductor device is formed by sputtering or vacuum evaporation, so it is industrially impossible to make the wiring thick. Countermeasures have been taken such as widening the line wiring width and adopting multilayer wiring, but the former method increases the device area, while the latter method not only increases the number of manufacturing steps but also increases the wiring structure. The disadvantage is that it becomes complicated and reduces yield.

Therefore, a semiconductor device using a giant bonding method has been proposed, which is capable of reducing the voltage drop in the power supply line without taking the above-mentioned cost-increasing measures for semiconductor elements that require a large current.

A conventional example of such a gigantic bonding type semiconductor device is shown in FIGS. 1a and 1b. Figure 1b
is a sectional view taken along line A-A' in FIG. 1a.

Protruding electrodes 2 provided on the periphery of the semiconductor element 1
A conductive lead 3 extending from the base film 4 and forming a film carrier is connected to the base film 4. Further, protruding electrodes 6, 6a and 6b for power supply lines are provided inside and around the semiconductor element 1, and conductive leads 5 and 5 extending from the base film 4 are provided.
A is connected to the protruding electrodes 6, 6a and 6b.
This series of connections is made by simultaneously thermocompressing the protruding electrodes 2, 6, 6a and 6b and the conductive leads 3, 5 and 5a using the bonding tool 7 shown in FIG. 1b.

Incidentally, the protruding electrode 6b has the role of preventing the occurrence of an electrical short circuit (hereinafter referred to as an edge touch) between the conductive lead 5 extending into the interior of the semiconductor element 1 and the end face portion of the semiconductor element 1.

According to the conventional example shown in FIG. 1, the power supply line can be taken out inside and around the semiconductor element 1 at any number of locations. In addition, the conductive leads 5, 5
Since copper foil of 18 .mu.m or 35 .mu.m is normally used for a, the voltage drop can be ignored without increasing costs.

However, by connecting the conductive lead 5 between the protruding electrode 6 and the protruding electrode 6b and the conductive lead 5a between the protruding electrode 6 and the protruding electrode 6a, the main material of the semiconductor element 1 (usually Si) and the conductive lead 5 are connected. and 5a
Thermal stress occurs due to the difference in the coefficient of thermal expansion of the main material (usually Cu) of the protruding electrodes 6, 6a and 6b.
There are problems such as peeling of the conductive leads 5 and 5a, and peeling or disconnection of the conductive leads 5 and 5a.

Purpose of the Invention The present invention has been made to eliminate the drawbacks of the conventional examples, and provides a semiconductor device that can completely solve the problem of thermal stress caused by the difference in coefficient of thermal expansion of each material without increasing costs. This is what we are trying to provide.

Structure of the Invention In order to achieve this object, a semiconductor device according to the present invention includes a semiconductor element in which a plurality of protruding electrodes are formed in each of the peripheral part and the inside thereof, and a plurality of protruding electrodes each connected to the protruding electrodes in the peripheral part. a second conductive lead connected to the first conductive lead and the internal protruding electrode;
a film carrier in which a conductive lead is formed on a flexible base film, and a second conductive lead is attached to the second conductive lead so as to be arranged in parallel with the protruding electrode on the periphery of the semiconductor element. A dummy protruding electrode is provided to support without being connected, and the tip of the second conductive lead is branched into a plurality of parts corresponding to the internal protruding electrodes, each of which is connected to the protruding electrode. According to this configuration, an electrical short circuit between the second conductive lead and the end face of the semiconductor element is prevented by the dummy protruding electrode, and the second conductive lead and the dummy protruding electrode are not connected. It is possible to prevent problems such as breakage of the second conductive lead and peeling of the protruding electrode connected to the second conductive lead due to thermal stress.

DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. 2a and 2b. FIG. 2b is a sectional view taken along line A-A' in FIG. 2a. Also, the same numbers are given to the same parts as in the conventional example.

Protruding electrodes 2 provided on the periphery of the semiconductor element 1
A conductive lead 3 extending from the base film 4 and forming a film carrier is connected to the base film 4. Further, the conductive lead 8 for the power supply line extends from the base film into the inside of the semiconductor element 1, has a tip end branched corresponding to the protruding electrode 6, and has each tip end provided inside the semiconductor element 1. It is connected to the protruding electrodes 6 and 6a. Here, a dummy protruding electrode 6b is provided below the conductive lead 8 and at a position around the semiconductor element 1. This dummy protruding electrode 6b is a protruding electrode formed in the same manufacturing process as the protruding electrodes 2, 6, and 6a, and is effective in preventing edge touching.

The above protruding electrode 2, conductive lead 3, and protruding electrode 6
6a and the conductive lead 8 are simultaneously bonded by thermocompression using a bonding tool 10 shown in FIG. 3b.

However, the conductive lead 8 and the dummy protruding electrode 6b
is not thermocompression bonded by using a bonding tool 9 having a concave portion 10 at its tip as shown in FIG.

By adopting the structure of this specific example as described above, in addition to being able to prevent edge touching, the protruding electrode 6 and the protruding electrode 6a are connected by the curved conductive lead 8, and the protruding electrode 6 and the dummy protruding electrode 6 are connected by the curved conductive lead 8.
Since there is no mechanical connection between
Thermal stress due to the difference in coefficient of thermal expansion between the conductive lead 8 and the curved portion is absorbed by the curved portion and the dummy protruding electrode 6b, so that peeling of the protruding electrodes 6 and 6a or disconnection of the conductive lead 8 does not occur.

Effects of the Invention By implementing the specific example of the present invention described above, it is possible to increase the area of a semiconductor element even in a semiconductor device with high power consumption while keeping the number of man-hours in the film carrier manufacturing process and thermocompression bonding the same as before. Therefore, it is possible to provide a semiconductor device that can suppress voltage drop due to wiring. Furthermore, a great advantage can be obtained in that the conventional problem of edge contact and thermal stress caused by differences in the coefficient of thermal expansion of each material can be completely solved.

Although the embodiments have been described with respect to power supply wiring, it is clear that the present invention can also be applied to signal wiring.

[Brief explanation of the drawing]

FIG. 1a is a plan view showing a conventional semiconductor device using a guy-young bonding method in which conductive leads are extended into a semiconductor element, FIG. 1b is a sectional view taken along line A-A' in FIG. 1a, and FIG. 2a is a A plan view showing an embodiment of the semiconductor device of the present invention, FIG. 2b is a sectional view taken along the line A-A' in FIG. 2a, and FIG. 3 is a diagram showing the tip shape of a bonding tool used in the semiconductor device of the present invention It is. 1...Semiconductor element, 2...Protruding electrode in the peripheral area,
3...First conductive lead, 4...Base film, 6, 6a...Internal protruding electrode, 6b...Dummy protruding electrode, 8...Second conductive lead.

Claims (1)

[Claims] 1. A semiconductor element in which a plurality of protruding electrodes are formed on each of the peripheral part and the inside, a plurality of first conductive leads respectively connected to the protruding electrodes in the peripheral part, and a second conductive lead connected to the protruding electrodes in the inside. a film carrier in which a conductive lead is formed on a flexible base film, and a second conductive lead is attached to the second conductive lead so as to be arranged in parallel with the protruding electrode on the periphery of the semiconductor element. A semiconductor device, wherein a dummy protruding electrode is provided to support without being connected, and the tip of the second conductive lead is branched into a plurality of parts corresponding to the internal protruding electrodes, each of which is connected to the protruding electrode.