JPH0471167B2 - - Google Patents

Info

Publication number
JPH0471167B2
JPH0471167B2 JP59194157A JP19415784A JPH0471167B2 JP H0471167 B2 JPH0471167 B2 JP H0471167B2 JP 59194157 A JP59194157 A JP 59194157A JP 19415784 A JP19415784 A JP 19415784A JP H0471167 B2 JPH0471167 B2 JP H0471167B2
Authority
JP
Japan
Prior art keywords
semiconductor
electrode
light
present
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59194157A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6171325A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59194157A priority Critical patent/JPS6171325A/ja
Publication of JPS6171325A publication Critical patent/JPS6171325A/ja
Publication of JPH0471167B2 publication Critical patent/JPH0471167B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials

Landscapes

  • Position Input By Displaying (AREA)
  • Facsimile Heads (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP59194157A 1984-09-17 1984-09-17 半導体装置 Granted JPS6171325A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59194157A JPS6171325A (ja) 1984-09-17 1984-09-17 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59194157A JPS6171325A (ja) 1984-09-17 1984-09-17 半導体装置

Related Child Applications (5)

Application Number Title Priority Date Filing Date
JP62000296A Division JPS62169381A (ja) 1987-01-05 1987-01-05 半導体装置
JP62000297A Division JPS62169382A (ja) 1987-01-05 1987-01-05 半導体装置
JP62000295A Division JPS62169380A (ja) 1987-01-05 1987-01-05 半導体装置
JP62000294A Division JPS62174979A (ja) 1987-01-05 1987-01-05 半導体装置
JP62000293A Division JPS62169379A (ja) 1987-01-05 1987-01-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS6171325A JPS6171325A (ja) 1986-04-12
JPH0471167B2 true JPH0471167B2 (de) 1992-11-13

Family

ID=16319865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59194157A Granted JPS6171325A (ja) 1984-09-17 1984-09-17 半導体装置

Country Status (1)

Country Link
JP (1) JPS6171325A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6382326A (ja) * 1986-09-26 1988-04-13 Kanagawa Pref Gov 紫外線センサ用素子

Also Published As

Publication number Publication date
JPS6171325A (ja) 1986-04-12

Similar Documents

Publication Publication Date Title
CN106684202B (zh) 一种感光组件、指纹识别面板及装置
CN112928134B (zh) 阵列基板和显示面板
US6740884B2 (en) Imaging array and methods for fabricating same
US7973311B2 (en) Isolated sensor structures such as for flexible substrates
US5164322A (en) Method for manufacturing photoelectric conversion device with a high response speed
JP2004119719A (ja) 光センサ用ダイオード、これを用いた画像入力回路、および画像入力回路の駆動方法
JPH0783098B2 (ja) 光イメ−ジ検出器の製造方法及びこの製造方法により製造される２次元マトリクス検出器
US4810661A (en) Photoelectric conversion device and method for manufacturing the same
CN111370524B (zh) 感光传感器及其制备方法、阵列基板、显示面板
JPH0471167B2 (de)
JPS62174979A (ja) 半導体装置
JPH0746721B2 (ja) イメ−ジセンサおよびその製造方法
JPS62169382A (ja) 半導体装置
JPS62169379A (ja) 半導体装置
JPS62169380A (ja) 半導体装置
JPS62169378A (ja) 半導体装置作製方法
KR100308750B1 (ko) 박막반도체장치및그제조방법
JPS62169381A (ja) 半導体装置
JPS6171665A (ja) 半導体装置作製方法
JPS6191687A (ja) 半導体装置
JPS6167263A (ja) 半導体装置作製方法
JPS6167262A (ja) 半導体装置
JPS6167261A (ja) 半導体装置
US5187563A (en) Photoelectric conversion device with Al/Cr/TCO electrode
JPS6269553A (ja) 半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term