JPH0472064A - Plasma control system - Google Patents

Abstract

PURPOSE:To provide the plasma control system which executes stable film formation, etching and surface treating by observing the nature of the plasma itself and applying a feedback to the control means of a device by using the result thereof. CONSTITUTION:A voltage Vp to be impressed to a probe 8 is swept up to -30 to 30V by a plasma measuring means 10 after the start of discharge and the current Ip flowing in the probe 8 is measured. This operation is repeated several times. The resulted data of Vp, Ip are respectively stored in an arithmetic processing means 11. The arithmetic processing means 11 analyzes the Ip-Vp characteristic of every measurement in accordance with the theory of a probe method, determines the respective electron temps. Te and calculates the average value thereof. In succession, this value is compared with the set value already inputted to a comparing means 12. The comparing means 12 sends a signal to a pressure controller 40 in accordance therewith. A variable orifice 41 of the pressure controller 40 is controlled to maintain the electron temp. Te which is one of the various quantities of the plasma at a specified temp.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a device or process control method for performing film formation, etching, surface treatment, etc. using low-temperature plasma in a semiconductor manufacturing process. .

[Conventional technology]

Conventionally, plasma process conditions such as sputtering, CVD, etching, etc. are determined by experiments for each apparatus. This is because even when the same type of equipment is used, the properties of the thin films formed often differ, and the process control is based on experimentally determined equipment parameters such as gas pressure, flow rate, electrodes, and This is generally done by keeping the voltage, power, etc. applied to the substrate holder that holds the material constant.

On the other hand, as an example of controlling a process using a process monitor, an etching end point monitor is known in which the end point of etching is determined by a change in the plasma light emission phenomenon. VDC is also used as a means of measuring the negative DC component of the potential of a conductor to be processed or a conductor substrate holder exposed to plasma.
Monitors are widely commercially available, and systems for controlling high frequency power applied to the substrate holder so that the measured value is equal to a preset value are also known.

[Problem to be solved by the invention]

However, the conventional plasma management method described above, which maintains constant equipment parameters such as gas flow rate, pressure, voltage applied to the electrode or substrate holder, and electric power, results in film formation and etching surface treatment with good reproducibility over a long period of time, resulting in a glossy surface. 6 This is often due to the fact that the plasma that is formed is not necessarily the same even if the conditions are the same as before on the device display. For example, when sputtering an insulator, The plasma itself may change due to the gradual coating of an insulating film on the ground part in the chamber or changes in the thickness direction of the target.
As a result, the characteristics of the thin film formed on the material to be treated also change. This phenomenon of plasma change is not limited to sputtering, but applies to all processes using plasma.

On the other hand, the one-point etching detection method using changes in plasma light emission described in the previous section is a simple method for keeping the amount of etching constant, but it does not keep the properties of the plasma itself constant. Further, the VDC monitor described in the previous section has the disadvantage that in the case where the material to be treated is a conductor and a film is being formed, the surface potential of the substrate cannot be measured unless the film is also a conductor. In addition, in terms of process control, among the many device control means, feedback is applied only to the high frequency power applied to the substrate holder, so the control means are limited.

The present invention solves the above-mentioned problems by observing the properties of the plasma itself and using the results to provide feedback to the control means of the device, thereby providing plasma control that performs stable film formation, etching, and surface treatment. The purpose is to provide a system.

[Means for resolving lesson order]

The plasma control system of the present invention includes (1) a plasma generation apparatus having a means for generating plasma and a substrate holder for holding a material to be processed, a means for measuring plasma, a means for processing the measurement results; The present invention is characterized by comprising means for comparing the calculation result with a preset value, and means for controlling the plasma generator so that both values are equal.

(2) The plasma control system of item (1) is characterized in that gas pressure is controlled as means for controlling the plasma generator.

(3) The plasma control system of item (1) is characterized in that the gas flow rate is controlled as means for controlling the plasma generator.

(4) The plasma control system of item (1) is characterized in that the voltage or power applied to the electrodes is controlled as means for controlling the plasma generator.

(5) The plasma control system of item (1) is characterized in that the voltage or power applied to the substrate is controlled as means for controlling the plasma generator.

(6) The plasma control system of item (1) is characterized in that the position of the substrate holder is controlled as means for controlling the plasma generator.

(7) The plasma control system according to item (1) is characterized in that the voltage applied to the third electrode arranged between the electrode and the substrate holder is controlled as means for controlling the plasma generator.

〔Example〕

Before describing embodiments of the present invention, a plasma measurement method will be described. Plasma measurement methods can be broadly divided into the probe method, which inserts an electrode directly into the plasma, the emission spectroscopy method, which analyzes plasma emission, and the method, which injects microwaves, lasers, etc. into the plasma and measures their interaction. . Both measurement methods attempt to quantitatively determine the properties of plasma. These quantities are generally referred to as "plasma parameters" and include plasma potential, floating potential, electron temperature, plasma density, etc. The plasma control system in this embodiment uses these quantities below. However, the values to be used are not limited to the above-mentioned quantities, but may be any value that represents the characteristics of the plasma. Further, in the following embodiments, a probe method is used as a plasma measurement means.

The measurement method is not limited to this method.

(Example 1) FIG. 1 shows an example in which the present invention is applied to a DC sputtering apparatus.

The target 20 is ITO, the substrate 7 is a glass substrate,
The target holder 21 and the substrate holder 6 are held by an insulator 5, respectively, which are electrically insulated from the chamber 1 which is at ground potential. A Mo wire was used for the electrode portion of the probe 8, and a glass tube was used for covering the Mo wire. In order to reduce film deposition on the probe surface, a probe evacuation chamber 9 was provided to maintain the probe outside the plasma except during measurement. Further, the disturbance given to the plasma by the probe 8 during measurement is not at a level that can be observed as a change in the emission intensity.

In an example of the discharge described below, first, the inside of the chamber 1 is evacuated to a predetermined degree of vacuum through the exhaust port 4 using an exhaust means (not shown), and then 58 CCM of Ar gas is introduced through the gas inlet 3.
Under the condition of pre-discharge Ar pressure setting of 0°6Pa, DC power supply 2
2 is an example in which the voltage is generated by applying -320V to the target 20.

After the discharge starts, the probe 8 is first moved from the probe retreat chamber 9 to the plasma generation chamber 2. The measurement is performed by changing the voltage Vp applied to the probe 8 by the plasma measuring means 10 to -30 to 3
The voltage Vp sweep time is approximately 30 by sweeping to 0V and measuring the current p flowing through the probe 8 at that time.
After repeating this operation several times, the probe 8
is evacuated to the probe evacuation chamber 9. Fl! V
The data p and Ip are each stored in the arithmetic processing means 11.

The arithmetic processing means 11 analyzes the II)-Vp characteristic for each measurement based on the theory of the probe method to determine the respective electron temperatures Te, and calculates the average value Te.

Subsequently, the value of Te and T that have been input in advance to the comparison means 12 are
The set value of e is compared.

In this device, the relationship between the electron temperature Te and the Ar pressure PAr is shown in FIG. 2. As the Ar pressure PAr increases, the electron temperature Te decreases to PAr=0. It has been confirmed through experiments that the decrease is in the range of 1 to 2-Pa. Therefore, comparison method 1
2 sends a signal to the pressure controller 40 to increase the Ar pressure PAr when Te is larger than the set value. Conversely, if Te is smaller than the set value, a signal is sent to the pressure controller 40 to reduce the Ar pressure PAr. Pressure controller 40 controls barrier pull orifice 41 in response to the applied signal.

By repeating the above operations, the pressure inside the chamber 1 is controlled, and the electron temperature Te, which is one of the plasma quantities measured by the probe, can be kept constant.

In the above embodiment, the plasma M! An example is shown in which the electron temperature Te and the Ar pressure PAr are used as means for controlling the plasma generator, and the Ar pressure is feedback-controlled based on the result that Te decreases as PAr increases. However, this embodiment is not limited to the relationship between Te and PAr, and it is sufficient if it is confirmed that Te increases or decreases with respect to the Ar pressure PAr.

Furthermore, although it has been mentioned above that the plasma quantities to be measured are not limited to the electron temperature Te, the gas is not limited to Ar either.

(Example 2) An example in which the present invention is applied to a high-frequency plasma processing apparatus is shown in FIG. 3. The high-frequency electrode 30 was a mesh electrode, and the substrate 7 was a glass substrate. The electrode 30 and the conductive substrate holder 6 are
It is electrically insulated by an insulator 5 from the chamber 1 which is at ground potential. The electrode portion of the probe 8 was made of Mo wire, and a glass tube was used to cover the Mo wire. In order to reduce contamination of the probe surface by plasma particles or ejected materials from the inner wall of the chamber, a probe evacuation chamber 9 was provided to maintain the probe 8 outside the plasma except during measurement. Further, the disturbance given to the plasma by the probe 8 during measurement is not at a level that can be observed as a change in the emission intensity.

In an embodiment of the discharge described below, first, the inside of the chamber 1 is evacuated to a predetermined degree of vacuum through the exhaust port 4 using an exhaust means (not shown), and then the mass flow controller 5 is
Introduce 285 CCM of O2 gas through the O2 setting, o
This is an example in which 100 W of power was applied to the high frequency electrode 30 by the high frequency power supply 31 under the condition of 2 gas pressure of 2.7 Pa.

After the discharge starts, the probe 8 is first moved from the probe retreat chamber 9 to the plasma generation chamber 2. In the measurement, the floating potential Vf of the probe 8 is measured by the plasma measuring means 10. After repeating this Vf measurement several times, probe 8
is evacuated to the probe evacuation chamber 9. Data for each measurement of Vf is stored in the arithmetic processing means 11, and the average value Vf is determined. Subsequently, the value of Vf is compared with the set value of Vf inputted in advance to the comparison means 12. In this device, the floating potential Vf of the probe 8 and the QO2 of the flow rate are compared.
As shown in Figure 4, as the 02 flow rate Qoe increases, the floating potential Vf changes from Qo2 = 5 to 500SC.
It has been confirmed through experiments that the amount of water decreases in the CM range. Therefore, the comparison means 12 sends a signal to the mass flow controller 50 to increase the o2 flow IQo2 when the Vf is larger than the set value. Conversely, if Vf is smaller than the set value, a signal is sent to the mass flow controller 50 to decrease the 02 stream IQO2. mass flow controller 5
0 controls the 02 style JIQo2 according to the given signal.

By repeating the above operations, the flow rate of 02- is controlled, and the floating potential Vf, which is one of the plasma quantities measured by the probe, can be kept constant.

In the above embodiment, the floating potential Vf is used as the plasma I to be measured, and the 02 flow RQ o a is used as a means for controlling the plasma generator, and based on the result that Vf decreases as O02 increases, Oe fm ! An example of feedback control is shown. However, this embodiment is not limited to the relationship between Vf and Q o 2, and V
It has been confirmed that f increases or decreases with respect to the 02 flow jl Q Oe, and as mentioned above, the plasma quantities to be measured are not limited to the floating potential Vf, but the gas also changes in the 02 flow. It is not limited.

(Embodiment 3) FIG. 5 shows an embodiment in which the present invention is applied to a DC sputtering apparatus.

The target 20 uses a glass substrate as the ITO1 substrate 7,
Chambers 1 each at earth potential by means of insulators 5
The electrodes of the target holder 21, the substrate holder 6, and the flow tube 8 are electrically insulated from the
A glass tube was used to cover the o-ray. In order to reduce film deposition on the probe surface, a probe evacuation chamber 9 was provided to maintain the probe 8 outside the plasma except during measurement. Further, the disturbance given to the plasma by the probe 8 during measurement is not at a level that can be observed as a change in the emission intensity.

In an example of the discharge described below, first, the inside of the chamber 1 is evacuated to a predetermined degree of vacuum from the exhaust port 4 using an exhaust means (not shown), and then 5 SC0M of Ar gas is introduced from the gas inlet 3, and the Ar pressure is 0.6 Pa. This is an example in which the power input to the target 20 by the true current power supply 22 is set to ioow and generated under the conditions.

After the discharge starts, the probe 8 is first moved from the probe retreat chamber 9 to the plasma generation chamber 2. The measurement is performed by changing the voltage Vp applied to the probe 8 by the plasma measuring means 10 to -30 to 3
The voltage Vp sweep time is approximately 30 by sweeping to 0V and measuring the current Ip flowing through the probe 8 at that time.
Seconds. After repeating this operation several times, the probe 8 is evacuated to the probe evacuation chamber 9. The obtained Vp and Ip data are stored in the arithmetic processing means 11, respectively.

The arithmetic processing means 11 analyzes the Ip-Vp characteristics for each measurement based on the principle of the probe method to determine the respective plasma densities Ne, and calculates the average value Ne.

Next, the value of Ne and N that have been input in advance to the comparison means 12 are
The relationship between the plasma density Ne and the power Pin applied to the target in this device, where the set value of e is compared, is as shown in Figure 6. As the input power Pin increases, the plasma density Ne changes from P in = 50 to 150. It has been confirmed through experiments that the value increases within the range of W. Therefore, when Ne is larger than the set value, the comparison means 12 calculates the input power Pin.
A signal is sent to the DC power supply 22 to decrease the . On the contrary, Ne
If is smaller than the set value, a signal is sent to the DC power supply 22 to increase input power Pin. The DC power supply 22 controls the power supplied to the target 20 according to the applied signal.

By repeating the above operations, the power applied to the target 11 is controlled, and the plasma density Ne, which is one of the plasma quantities measured by the probe, can be kept constant.

In the above embodiment, the plasma density Ne is used as the plasma quantity to be measured, the electric power Pin input to the electrode is used as a means for controlling the plasma generator, and an example is given in which the feedback control of Pin is performed based on the result that Ne increases as Pin increases. Indicated. However, in this embodiment, the Ne and P
It is not limited to the relationship of in, it is sufficient if it is confirmed that Ne increases or decreases with respect to Pin, and the various plasma quantities to be measured are based on the plasma density Ne
As mentioned above, the voltage applied to the electrodes may be used as the control means.

(Embodiment 4) FIG. 7 shows an embodiment in which the present invention is applied to a high-frequency plasma generator.

g! The conductive substrate holder 6 and the counter electrode 30 are insulators 5
are electrically insulated from the chamber 1, and are connected to high frequency power sources 60 and 31, respectively.

A glass substrate was used as the substrate 7. The probe 8 is inserted near the substrate 7. A Mo wire was used as the electrode of the probe 8, and a glass tube was used to cover the Mo wire. In order to reduce contamination of the probe surface by plasma particles or ejected materials from the inner wall of the chamber, a probe evacuation chamber 9 was provided to maintain the probe 8 outside the plasma except during measurement. Further, the disturbance given to the plasma by the probe 8 during measurement is not at a level that can be observed as a change in emission intensity.

In an example of the discharge described below, first, the inside of the chamber 1 is evacuated to a predetermined degree of vacuum from the exhaust port 4 using an exhaust means (not shown), and then He gas is introduced from the gas inlet 3, and the He gas pressure is 23 Pa. The example shown below is generated by applying 400 W of power from the high frequency power source 31. At the start of discharge, high frequency power supply 6
The power supplied to the substrate holder from 0 was set to 100W.

After the discharge starts, the probe 8 is first moved from the probe retreat chamber 9 to the plasma generation chamber 2. In the measurement, the floating potential Vf of the probe 8 is measured by the plasma measuring means 10. After repeating this Vf measurement several times, probe 8
is evacuated to the probe evacuation chamber 9. Data for each measurement of Vf is stored in the arithmetic processing means 11, and the average value Vf is determined. Subsequently, the value of Vf is compared with the set value of Vf that has been input in advance to the comparing means 12. In this device, the relationship between the floating potential Vf of the probe 8 and the power Psub applied to the substrate holder is as shown in section 8.
When b increases, the floating potential Vf becomes Psub=0
It has been confirmed through experiments that the power consumption increases in the range of ~200W. Therefore, the comparison means 12 sends a signal to the high frequency power source 60 to reduce the power Psub applied to the substrate holder 7 when Vf is larger than the set value. Conversely, if Vf is smaller than the set value, a signal is sent to the high frequency power supply 60 to increase the power Psub. The high frequency power source 60 controls the power applied to the substrate holder 6 according to the applied signal.

By repeating the above operations, the power applied to the substrate holder 5 is controlled, and the floating potential Vf, which is one of the plasma parameters I measured by the probe, can be kept constant.

In the above embodiment, the floating potential Vf is used as the plasma to be measured, and the electric power Psub applied to the substrate holder is used as a means for controlling the plasma generator, and Psub is feedback-controlled based on the result that Vf increases as Psub increases. showed that. However, this embodiment is not limited to the relationship between Vf and Psub as long as it is confirmed that Vf increases or decreases with respect to Psub. Further, as described above, the plasma quantities to be measured are not limited to the floating potential Vf, but a voltage applied to the substrate holder may be used as a control means.

(Embodiment 5) FIG. 9 shows an embodiment in which the present invention is applied to a high-frequency plasma processing apparatus.

A mesh electrode was used as the high frequency electrode 30, and a glass substrate was used as the substrate 7. The electrode 30 and the conductive substrate holder 6 are
An insulator 5 electrically insulates the chamber 1 which is at ground potential. In this state, the substrate holder 6 has a mechanism to move vertically by a substrate holder driving means 70.The electrode portion of the probe 8 is coated with an MO wire and a glass tube is used to cover it. In order to reduce contamination of the probe surface by plasma particles or ejected materials from the inner wall of the chamber, a probe evacuation chamber 9 was provided to maintain the probe 8 outside the plasma except during measurement. Further, the disturbance given to the plasma by the probe 8 during measurement is not at a level that can be observed as a change in the emission intensity.

In an example of the discharge described below, first, the inside of the chamber 1 is evacuated to a predetermined degree of vacuum from the exhaust port 4 using an exhaust means (not shown), and then 53 CCM of 02 gas is introduced from the gas inlet 3.
This is an example in which 100 W of power was applied to the high frequency electrode 30 from the high frequency power supply 31 under the condition of 0.2 gas pressure of 1.3 Pa. At the start of discharge, the high frequency electrode 30 and the substrate holder 6
The distance DES is set to 10 cm.

After the discharge starts, the probe 8 is first moved from the probe retreat chamber 9 to the plasma generation chamber 2. In the measurement, the floating potential Vf of the probe 8 is measured by the plasma measuring means 10. After repeating this measurement of Vf several times, the probe 8 is evacuated to the probe retraction chamber 9. Data for each measurement of Vf is stored in the arithmetic processing means 11, and the average value Vf is determined.

Subsequently, the distance between the floating potential Vf of the probe 8 and the high frequency W1 pole 301 and the substrate holder 6 in the device is compared with the Vf value and the Vf setting value inputted in advance to the comparison means 12. As shown in FIG. 10, it has been experimentally confirmed that as the distance 1ift D E S increases, the floating potential Vf decreases in the range of DES:=8.5 to 20 crn. Therefore, the comparison means 12 calculates the distance DES when Vf is greater than the set value.
A signal is sent to the substrate holder driver yj70 to increase the value. Conversely, if Vf is smaller than the set value, the distance DEs
A signal is sent to the substrate holder driving means 7o to decrease the . The substrate holder driving means 70 controls the position of the substrate holder 6 according to the applied signal.

By repeating the above operations, the distance between the high frequency electrode 30 and the substrate 7 can be controlled, and the floating potential Vf, which is one of the various plasma quantities measured by the probe, can be kept constant.

In the above embodiment, the floating potential Vf is used as the plasma quantity to be measured, the distance tillES between the electrode and the substrate holder is used as the means for controlling the plasma generator, and Vf
An example is shown in which DES is feedback-controlled based on the result that DES decreases as DES increases. However, this embodiment is not limited to the relationship between Vf and DES; it is sufficient if it is confirmed that Vf increases or decreases with respect to DES, and the plasma quantities to be measured are at floating potential. Although it was mentioned above that the distance is not limited to Vf, the electrode side may be moved as a means of changing the distance between the electrode and the substrate.

(Embodiment 6) FIG. 11 shows an embodiment in which the present invention is applied to a DC sputtering apparatus.

The target 20 uses a glass substrate as the ITO1 substrate 7,
Chambers 1 each at earth potential by means of an insulator 5
The target holder 21 and the substrate holder 6 are electrically insulated from the target holder 21 and the substrate holder 6. Target 20 and substrate 7
An electrode (hereinafter referred to as a third electrode) 80 is installed between them, and this third electrode 80 is connected to a DC power source 81. The probe 8 is inserted between the substrate 7 and the third electrode 80 near the substrate. An MO wire was used as the electrode of the probe 8, and a glass tube was used to cover the MO wire. In order to reduce film deposition on the probe surface, a probe evacuation chamber 9 was provided to maintain the probe 8 outside the plasma except during measurement. Moreover, the disturbance given to the plasma by the probe 8 during measurement is not at a level that can be observed as a change in the emission intensity.

In an example of the discharge described below, first, the inside of the chamber 1 is evacuated to a predetermined degree of vacuum through the exhaust port 4 using an exhaust means (not shown), and then 5300M of Ar gas is introduced through the gas inlet 3.
This is an example in which the voltage was generated by applying -330V to the target 20 using a DC current M22 under the condition of an Ar pressure of 0.6 Pa.

At the start of discharge, the voltage applied to the third electrode 80 was set to 20V.

After the discharge starts, the probe 8 is first moved from the probe retreat chamber 9 to the plasma generation chamber 2. In the measurement, the floating potential Vf of the probe 8 is measured by the plasma measuring means 10. After repeating this Vf measurement several times, probe 8
is evacuated to the probe evacuation chamber 9. Data for each measurement of Vf is stored in the arithmetic processing means 11, and the average value Vf is determined. Next, the relationship between the floating potential Vf of the probe 8 and the voltage VT applied to the third electrode 80 is shown in FIG. As shown, the voltage v
As T increases, the floating potential Vf changes from VT=0 to 6.
It has been confirmed through experiments that the voltage increases in the 0V range. Therefore, the comparison means 12 sends a signal to the DC power supply 81 to reduce the voltage VT applied to the 39th pole 80 when Vf is larger than the set value. Conversely, if Vf is smaller than the set value, a signal is sent to the DC power supply 81 to increase the voltage VT. The DC power source 81 connects the third electrode 8 according to the applied signal.
Control the voltage applied to 0.

By repeating the above operations, the voltage applied to the third electrode 80 is controlled, and the floating potential Vf, which is one of the plasma quantities measured by the probe, can be kept constant.

In the above embodiment, the floating potential Vf is used as the plasma quantity to be measured, and the voltage VT applied to the third electrode is used as a means for controlling the plasma generator, and VT is feedback-controlled based on the result that Vf increases as VT increases. An example is shown below. However, this embodiment is not limited to the relationship between Vf and V7, as long as it is confirmed that Vf increases or decreases with respect to VT.

Furthermore, as mentioned above, the various plasma quantities to be measured are not limited to the floating potential Vf.

〔Effect of the invention〕

As described above, the system of the present invention is a plasma generating apparatus that performs film formation, etching, and surface treatment. It consists of a means for controlling the first-stage plasma generator so that the
It is possible to determine plasma parameters that represent the unique properties of plasma, and it is possible to keep specific plasma quantities constant.

As a result, it becomes possible to stabilize the plasma process.

[Brief explanation of the drawing]

FIG. 1 is a system configuration diagram when gas pressure is used as a control means in the plasma control system according to the present invention;
, FIG. 2 shows the relationship between the electron temperature Te and the Ar pressure PAr, which was investigated using the sputtering apparatus shown in FIG. FIG. 3 is a system configuration diagram when gas flow rate is used as a control means in the plasma control system according to the present invention;
FIG. 4 is a diagram showing the relationship between the floating potential Vf and the 02 flow rate Qo2, which was investigated using the high-frequency plasma processing apparatus shown in FIG. FIG. 5 is a system configuration diagram when electric power input to a target is used as a control means in the plasma control system according to the present invention. FIG. 6 is a diagram showing the relationship between the plasma density Ne and the electric power Pin input to the target, which was investigated using the sputtering apparatus shown in FIG. 5. FIG. 7 is a system configuration diagram when electric power input to the substrate holder is used as a control means in the plasma control system according to the present invention. FIG. 8 is a diagram showing the relationship between the floating potential Vf and the electric power Psub input to the substrate holder, which was investigated using the apparatus shown in FIG. 7. FIG. 9 is a configuration diagram of a system for controlling the position of a substrate holder as a control means in the plasma control system according to the present invention. FIG. 10 is a diagram showing the relationship between the floating potential Vf and the electrode-to-substrate holder distance DBS, which was investigated using the high-frequency plasma processing apparatus shown in FIG. 9. FIG. 11 is a system configuration diagram when a voltage applied to the third electrode is used as a control means in the plasma control system according to the present invention. FIG. 6 is a diagram showing the relationship between potential Vf and voltage VT applied to the third electrode. 1... Chamber 2... Plasma generation chamber 3... Gas inlet 4... Exhaust port 5... Insulator 6... Substrate holder 7... Substrate 8... Probe 9...・Probe evacuation chamber 10...Plasma measurement means 11...Arithmetic processing means 12...Comparison means 20...Target 21...Target holder 22.81...DC power supply 30...High frequency electrode 31 .60...High frequency power supply 40...Pressure controller 41...Barrier pull orifice 50...Mass flow controller 70...Substrate holder driving means 80...Third electrode

Claims (7)

[Claims] (1) In a plasma generation apparatus having a means for generating plasma and a substrate holder for holding a material to be processed, the means for measuring plasma, the means for calculating the measurement result, and the calculation result being set to a preset value. A plasma control system comprising means for comparing and means for controlling the plasma generator so that the two are equal. (2) The plasma control system according to claim 1, wherein gas pressure is controlled as means for controlling the plasma generator. (3) The plasma control system according to claim 1, characterized in that gas flow rate is controlled as means for controlling the plasma generator. (4) The plasma control system according to claim 1, characterized in that the voltage or power applied to the electrodes is controlled as means for controlling the plasma generator. (5) The plasma control system according to claim 1, characterized in that the voltage or power applied to the substrate holder is controlled as means for controlling the plasma generator. (6) The plasma control system according to claim 1, characterized in that the position of the substrate holder is controlled as means for controlling the plasma generator. (7) The plasma control system according to claim 1, characterized in that the voltage applied to a third electrode arranged between the electrode and the substrate holder is controlled as means for controlling the plasma generator.