JPH0472548U - - Google Patents
Info
- Publication number
- JPH0472548U JPH0472548U JP11555890U JP11555890U JPH0472548U JP H0472548 U JPH0472548 U JP H0472548U JP 11555890 U JP11555890 U JP 11555890U JP 11555890 U JP11555890 U JP 11555890U JP H0472548 U JPH0472548 U JP H0472548U
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- electron beam
- anode
- hole
- aligned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 230000001133 acceleration Effects 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
第1A図は、本考案の平面型・カソードの配置
を示す概略図、第1B図は、本考案の円筒型・カ
ソードの配置を示す概略図、第2図は、本考案の
円筒型・カソードを用いた電子ビーム源の構成図
、第3図は、各種放電ガスによる放電開始電圧と
ガス圧×電極間距離の関係を示す図、第4図は、
従来のカソードの正面断面図、第5図は、従来の
ドライエツチング装置の構成図である。
符号の説明、10,20,50……筒状密封容
器、11,23,23′,23″,63,63′
,63″,63″′……貫通孔、12,24,5
8……第1の中間電極、13,30,60……カ
ソード室、14,14′……ホウ化ランタン・フ
イラメント、15,15′……加熱電源、16,
16′……絶縁フランジ、17……イオン流、1
8,32,40……放電ガス導入孔、21,51
……カソード、22,54……ホルダ、25,5
2……アノード、26,53……電子ビーム加速
電極、27,55……放電領域、28,56……
電子ビーム加速領域、29,57……被処理領域
、31,62……アノード室、33,65……被
処理ガス導入孔、34,34′,64,64′,
64″……排気孔、59……第2の中間電極、6
1……中間室、41……補助カソード、42……
主カソード、43……絶縁支持部材、44……円
筒状部材。
Figure 1A is a schematic diagram showing the planar type cathode arrangement of the present invention, Figure 1B is a schematic diagram showing the cylindrical type cathode arrangement of the present invention, and Figure 2 is a cylindrical type cathode arrangement of the present invention. A configuration diagram of an electron beam source using
FIG. 5, which is a front sectional view of a conventional cathode, is a block diagram of a conventional dry etching apparatus. Explanation of symbols, 10, 20, 50... Cylindrical sealed container, 11, 23, 23', 23'', 63, 63'
, 63″, 63″′...Through hole, 12, 24, 5
8...First intermediate electrode, 13,30,60...Cathode chamber, 14,14'...Lanthanum boride filament, 15,15'...Heating power source, 16,
16'...Insulating flange, 17...Ion flow, 1
8, 32, 40...Discharge gas introduction hole, 21, 51
...Cathode, 22,54 ...Holder, 25,5
2...Anode, 26,53...Electron beam accelerating electrode, 27,55...Discharge region, 28,56...
Electron beam acceleration region, 29, 57...Processing region, 31, 62...Anode chamber, 33, 65...Processing gas introduction hole, 34, 34', 64, 64',
64″...Exhaust hole, 59...Second intermediate electrode, 6
1... Intermediate chamber, 41... Auxiliary cathode, 42...
Main cathode, 43... Insulating support member, 44... Cylindrical member.
Claims (1)
23′を有するアノード25と、貫通孔23″を
有する電子ビーム加速電極26とをこれらの貫通
孔を揃えて包囲体内に配置し、この包囲体の閉じ
た上流端と前記の中間電極24とによりカソード
室30を形成し、このカソード室30は外部の加
熱電源を備えたカソード21を含み、そして放電
用ガスを導入する導入孔32を有し、前記の中間
電極24と前記のアノード25とによりアノード
室31を形成し、そして前記のアノード25と前
記の電子ビーム加速電極26とにより加速領域2
8を形成し、この領域は排気孔34を有し、前記
のカソード21は前記の貫通孔が整列した線から
それの熱電子放射面を離して配置されていること
を特徴とするプラズマ発生用電子ビーム源。 2 カソードはホウ化ランタン・フイラメントか
ら成る平面型カソードである請求項1に記載のプ
ラズマ発生用電子ビーム源。 3 カソードはホウ化ランタン・フイラメントか
ら成る円筒型カソードであり、それの円筒中心を
貫通孔が整列した線に揃えて配置されている請求
項1に記載のプラズマ発生用電子ビーム源。[Claims for Utility Model Registration] 1. An intermediate electrode 24 having a through hole 23, an anode 25 having a through hole 23', and an electron beam accelerating electrode 26 having a through hole 23'' are surrounded by aligning these through holes. The closed upstream end of the enclosure and the intermediate electrode 24 form a cathode chamber 30 which contains a cathode 21 with an external heating source and which is supplied with a discharge gas. The intermediate electrode 24 and the anode 25 form an anode chamber 31, and the anode 25 and the electron beam acceleration electrode 26 form an acceleration region 2.
8, this region has an exhaust hole 34, and the cathode 21 is arranged with its thermionic emission surface separated from the line in which the through holes are aligned. Electron beam source. 2. The electron beam source for plasma generation according to claim 1, wherein the cathode is a planar cathode made of a lanthanum boride filament. 3. The electron beam source for plasma generation according to claim 1, wherein the cathode is a cylindrical cathode made of a lanthanum boride filament, and the center of the cylinder is aligned with a line in which the through holes are aligned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11555890U JPH0472548U (en) | 1990-11-02 | 1990-11-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11555890U JPH0472548U (en) | 1990-11-02 | 1990-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0472548U true JPH0472548U (en) | 1992-06-25 |
Family
ID=31863334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11555890U Pending JPH0472548U (en) | 1990-11-02 | 1990-11-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0472548U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6315548B2 (en) * | 1978-11-29 | 1988-04-05 | Tokyo Shibaura Electric Co | |
| JPS6453422A (en) * | 1987-08-24 | 1989-03-01 | Tokyo Electron Ltd | Dry etching device |
-
1990
- 1990-11-02 JP JP11555890U patent/JPH0472548U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6315548B2 (en) * | 1978-11-29 | 1988-04-05 | Tokyo Shibaura Electric Co | |
| JPS6453422A (en) * | 1987-08-24 | 1989-03-01 | Tokyo Electron Ltd | Dry etching device |
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