JPH0473312B2 - - Google Patents
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- Publication number
- JPH0473312B2 JPH0473312B2 JP58112169A JP11216983A JPH0473312B2 JP H0473312 B2 JPH0473312 B2 JP H0473312B2 JP 58112169 A JP58112169 A JP 58112169A JP 11216983 A JP11216983 A JP 11216983A JP H0473312 B2 JPH0473312 B2 JP H0473312B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- resistance
- photoelectric conversion
- conversion member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
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- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は光電変換部材に関し、詳しくはアモル
フアスシリコンを用いた光センサに利用できる光
電変換部材の改良に係る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a photoelectric conversion member, and specifically relates to improvement of a photoelectric conversion member that can be used in a photosensor using amorphous silicon.
近年、複写機やフアクシミリ等の光電変換部の
小形化するために原稿と同寸法の読取幅をもつた
光センサの開発がなされている。従来光センサの
光電変換部材としてはCdS−CdSe，Se−As−Te
等が検討されているが光応答時間が12msと遅い
ため、たとえば1ms／line程度の高速読み出しが
不可能である。
In recent years, in order to downsize photoelectric conversion units in copiers, facsimile machines, and the like, optical sensors having a reading width of the same size as a document have been developed. Conventional photoelectric conversion materials for optical sensors include CdS-CdSe and Se-As-Te.
etc. are being considered, but because the optical response time is as slow as 12 ms, high-speed readout of, for example, 1 ms/line is not possible.
そこで最近光応答時間が1ms以下というアモル
フアスシリコン（以下ａ−Siと記す。）が光電変
換部材として注目をあびて来た。ａ−SiはSiH4，
Si2H6等のSiを含むガスをグロー放電によつて分
解して成膜されるが、その暗抵抗比は最良の膜質
のもので1011Ω・cm，650nmの波長で
1015photons／cm2の光に対して107Ω・cmの光抵抗
を示す。ところが、暗抵抗が1011Ω・cmであるた
めａ−Si膜の上下に直接、電極ではさんで、電圧
を印加する構成の光センサでは、電極からの電荷
の注入によつて暗電流が増大してSN比が低下し
てしまつたり、また、光照射のくり返しによつて
ａ−Si膜が劣化してしまい、暗抵抗比がさらに小
さくなり、従つてさらに暗電流が増大するという
不具合点がある。たとえば1.5Vの動作電圧に対
して暗電流が10-9A／mm2と大きく、また、光照射
のくり返しを行なうと10-8A／mm2，10-7A／mm2と
増大して行く。G54の螢光灯で100Lux照射した
時の光抵抗が10-7A／mm2であるから、長時間の使
用に対してほとんどＳ／Ｎ比がとれない。 Therefore, amorphous silicon (hereinafter referred to as a-Si), which has a photoresponse time of 1 ms or less, has recently attracted attention as a photoelectric conversion member. a-Si is SiH 4 ,
The film is formed by decomposing Si-containing gas such as Si 2 H 6 by glow discharge, and its dark resistance ratio is 10 11 Ω・cm at a wavelength of 650 nm, which is the best film quality.
It exhibits a photoresistance of 10 7 Ω・cm for light of 10 15 photons/cm 2 . However, since the dark resistance is 10 11 Ω・cm, in an optical sensor configured to apply a voltage directly between electrodes on the top and bottom of the a-Si film, the dark current increases due to charge injection from the electrodes. In addition, the a-Si film deteriorates due to repeated light irradiation, which further reduces the dark resistance ratio and therefore further increases the dark current. There is. For example, the dark current is large at 10 -9 A/mm 2 for an operating voltage of 1.5 V, and increases to 10 -8 A/mm 2 and 10 -7 A/mm 2 with repeated light irradiation. go. Since the optical resistance when irradiated with 100 Lux using G54's fluorescent lamp is 10 -7 A/mm 2 , there is almost no S/N ratio for long-term use.
そこで、例えばセラミツク基板上にCr電極、
ａ−Si膜、ITO膜と順次積層した後アニールを行
なう事によりａ−Si膜とITO膜との間にシヨツト
キーバリアを形成させ、ITO電極側からの電荷の
注入を防止するという提案がなされている。この
構成であればITO電極側を負極として1.5Vの電
圧を印加した時の暗電流が10-11A／mm2であり、
充分なＳ／Ｎ比がとれることがわかつた。しか
し、連続1000時間の通電試験を行なつたところ、
徐々にシヨツトキーバリアの障壁がBreak−
Down（破壊）され、全200ビツト中30ビツトが不
良になつてしまうという不具合点があつた。ま
た、この構成であつても印加する電圧を徐々に増
して行くと、10V近くでやはりシヨツトキーバリ
アが破壊され、耐圧が小さいという不具合点があ
つた。 Therefore, for example, Cr electrodes are placed on a ceramic substrate.
A proposal has been made to form a Schottky barrier between the a-Si film and the ITO film by sequentially stacking the a-Si film and the ITO film and then annealing them, thereby preventing charge injection from the ITO electrode side. being done. With this configuration, the dark current is 10 -11 A/mm 2 when a voltage of 1.5 V is applied with the ITO electrode side as the negative electrode.
It was found that a sufficient S/N ratio could be obtained. However, after 1000 hours of continuous power testing,
Gradually the Schottky barrier breaks-
There was a problem in which it was down (destroyed) and 30 bits out of a total of 200 bits became defective. Furthermore, even with this configuration, if the applied voltage was gradually increased, the Schottky barrier would still be destroyed at around 10V, resulting in a low withstand voltage.
本発明は、上記事情にもとづきなされたもの
で、その目的とするところは、光電流と暗電流と
の比が大きくSN比を向上させ、かつ耐圧にすぐ
れた光電変換部材を提供しようとするものであ
る。
The present invention has been made based on the above circumstances, and its purpose is to provide a photoelectric conversion member that has a large ratio of photocurrent to dark current, improves the signal-to-noise ratio, and has excellent withstand voltage. It is.
本発明はかかる目的を達成するために、基板上
に、第１の電極膜、Siを母体としてＣ，Ｏ，Ｎの
いずれか１つ以上を含むアモルフアスシリコンか
らなり暗抵抗比が1011Ω・cm以上の第１の高抵抗
膜、Siを母体として水素又はハロゲンの少なくと
も一方を含むアモルフアスシリコン膜、Siを母体
としてＣ，Ｏ，Ｎのいずれか１つ以上を含むアモ
ルフアスシリコンからなり暗抵抗比が1011Ω・cm
以上の第２の高抵抗膜、及び透光性を有する第２
の電極膜をこの順に成膜した後、150〜300℃の温
度でアニールを行うことにより構成したものであ
る。
In order to achieve such an object, the present invention includes a first electrode film on a substrate, which is made of amorphous silicon containing Si as a matrix and one or more of C, O, and N, and has a dark resistance ratio of 10 11 Ω.・First high-resistance film of cm or more, an amorphous silicon film containing at least one of hydrogen or halogen using Si as a matrix, and an amorphous silicon film containing at least one of C, O, and N using Si as a matrix. Dark resistance ratio is 10 11 Ω・cm
The above-described second high-resistance film, and a second film having light-transmitting properties.
After forming the electrode films in this order, the electrode films were annealed at a temperature of 150 to 300°C.
以下本発明の一実施例を図面を参照しながら説
明する。第１図は本発明の光電変換部材としての
ａ−Si光センサの層構成を示すもので、表面をグ
レーズ処理した酸化アルミニウム等のセラミツク
基板１上に第１の電極としてのCr電極２、Si及
びＣを母体としたアモルフアスで形成された高抵
抗の第１の薄膜５および第２の電極としての透光
性のITO電極６を順次積層した構成となつてい
る。
An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows the layer structure of an a-Si optical sensor as a photoelectric conversion member of the present invention, in which a Cr electrode 2 as a first electrode, a Si It has a structure in which a high-resistance first thin film 5 made of amorphous amorphous and C as a matrix and a translucent ITO electrode 6 as a second electrode are sequentially laminated.
さらに、本発明では上記層構成で成膜を行なつ
た後150〜300℃の間の所定の温度でアニールを行
なう。この時、Si及びＣを母体としたアモルフア
スで形成された高抵抗の薄膜３及び５はより具体
的にはバンドギヤツプ1.8eV以上、暗抵抗比1011
Ω・cm以上のａ−SixC4-x：Ｈ膜を用いる。 Further, in the present invention, after forming a film with the above-described layer structure, annealing is performed at a predetermined temperature between 150 and 300°C. At this time, the high-resistance thin films 3 and 5 formed of amorphous amorphous with Si and C as the matrix have a band gap of 1.8 eV or more and a dark resistance ratio of 10 11
An a-SixC 4-x :H film of Ω·cm or more is used.
次に本発明の層構成のａ−Si光センサの効果を
示す。ITO電極６とａ−Si：Ｈ膜４の間の第２の
高抵抗性により、例えばITO電極６に負の電圧を
印加した時、負の電荷が、ａ−Si：Ｈ膜４中へ注
入されるのを阻止する。さらには、本発明では、
成膜後に150〜300℃でアニールを行なつているた
めａ−Si：Ｈ膜４とITO電極６との間にシヨツト
キーバリアが形成されるので、ITO電極６からの
負電荷の阻止はより強固となる他、アニールする
事により本来ａ−SixC4-x：Ｈ膜５では生ずるは
ずのない整流性が現われ、光照射時の光電流を減
少させる事なく、暗電流をより減少させる事がで
きる事がわかつた。 Next, the effects of the a-Si optical sensor having the layered structure of the present invention will be described. Due to the second high resistance between the ITO electrode 6 and the a-Si:H film 4, for example, when a negative voltage is applied to the ITO electrode 6, negative charges are injected into the a-Si:H film 4. prevent it from happening. Furthermore, in the present invention,
Since annealing is performed at 150 to 300°C after film formation, a Schottky barrier is formed between the a-Si:H film 4 and the ITO electrode 6, so negative charges from the ITO electrode 6 can be blocked. In addition to becoming more solid, annealing brings about rectification properties that would not normally occur in the a-SixC 4-x :H film 5, further reducing dark current without reducing photocurrent during light irradiation. I found out that it is possible.
また、Cr電極２とａ−Si：Ｈ膜４の間の第１
の高抵抗ａ−SixC4-x：Ｈ膜３は、Cr電極２の側
からの正の電荷がａ−Si：Ｈ膜４中へ注入される
のを阻止する機能がある。しかし光照射時にこの
膜４中で発生するキヤリアの内負のキヤリアが
Cr電極２へ到達するのを阻止してしまうため、
その膜厚は充分に限定しなければならない。本発
明者が、その膜厚の検討を行なつた結果、第１の
ａ−SixC4-x：Ｈ膜３の膜厚は30Å以下であつて
は、本来のａ−SixC4-x：Ｈ膜の電荷注入阻止能
力が損なわれ、1000Å以上の厚膜では、光照射時
に光電流が減少し、充分な信号電圧が得られない
事が判明した。 Moreover, the first electrode between the Cr electrode 2 and the a-Si:H film 4 is
The high resistance a-SixC 4-x :H film 3 has a function of blocking positive charges from the Cr electrode 2 side from being injected into the a-Si:H film 4 . However, the internal and negative carriers generated in this film 4 during light irradiation are
This prevents it from reaching the Cr electrode 2.
The film thickness must be sufficiently limited. The inventor investigated the film thickness and found that if the thickness of the first a-SixC 4-x :H film 3 is 30 Å or less, the original a-SixC 4-x :H It was found that the ability of the film to block charge injection was impaired, and with a film thicker than 1000 Å, the photocurrent decreased during light irradiation, making it impossible to obtain a sufficient signal voltage.
以下、具体例を説明する。すなわち、酸化アル
ミニウム等のセラミツク基板１上にグレーズ処理
をほどこした後蒸着によつてCr電極２を3000Å
成膜した。P.E.P（フオト、エングリージングプ
ロセス）によつて１×１mm2角のCr電極２を200ビ
ツトのパターニングを行なつた後第２図に示す真
空反応容器１０内にサンプル１２…をセツトし
た。 A specific example will be explained below. That is, after performing a glaze treatment on a ceramic substrate 1 made of aluminum oxide or the like, a Cr electrode 2 with a thickness of 3000 Å is formed by vapor deposition.
A film was formed. After patterning a square Cr electrode 2 of 1×1 mm with 200 bits by PEP (photo engraving process), the sample 12 was placed in a vacuum reaction vessel 10 shown in FIG.
まず、真空反応容器１０内を図示しない拡散ポ
ンプ、ロータリーポンプによつて10-6torrの真空
に引くと同時にヒーター１１を動作させ、サンプ
ル１２であるCr電極２…のパターニングの終つ
たセラミツク基板１を250℃の温度に昇温してお
く。バルブ１３を開にしガス導入管１４より純シ
ラン（SiH4）ガス（流量30SCCM）、及びCH4ガス
（流量30SCCM）を真空反応容器１０内へ導入する
と同時に排気系を図示しない拡散ポンプ、ロータ
リーポンプ系からメカニカルブースターポンプ、
ロータリーポンプ系へ切り替える。ついで、バル
ブ１５の開閉によつて真空反応容器１０内の圧力
が、1.0torrによる様調整した後、サンプル１２
と対向した電極１６へ高周波電源１７を介して周
波数13.56MHzの高周波出力（R.F.Power）50W
を印加し、約１分間500Åのａ−SixC4-x：Ｈ膜３
を成膜した。高周波電源１７を遮断し、CH4ガス
の真空反応容器内１０内への導入をやめる。そし
てSiH4ガス（流量30SCCM）を真空反応容器１０内
へ導入したまま真空反応容器１０内の圧力が
0.3torrによる様に、バルブ１５を開閉を調整し
た後、再度高周波電源１７を動作させて対向電極
１２へ10Wの電力を投入した。約１時間、膜厚
1μmのａ−Si：Ｈ膜４を成膜した後、高周波電源
１７を遮断し、バルブ１５を全開にすると同時に
バルブ１３より再度CH4ガス（流量30SCCM）を真
空反応容器１０内へ導入した。真空反応容器１０
内の圧力が1.0torrになる様バルブ１５の開閉を
調整した後、再度高周波出力50Wを対向電極１６
へ投入し、約15分間750Åのａ−SixC4-x：Ｈ膜５
の成膜を行なつた。ヒーター１１及び高周波出力
を遮断にし、バルブ１３を閉とし、バルブ１５を
全開にして真空反応容器１０内の残留ガスを排気
し、圧力が10-4torrになるまで真空にした。サン
プル１２の温度が100℃以下になるのを待つて、
大気中へ取り出し、図示しないITOスパツタ装置
内にセツトし、1500ÅのITO膜６をさらに積層し
た。次いて、全成膜行程を終えたａ−Si光センサ
を200℃の温度で１時間アニールした。この状態
で200ビツトの内、数ビツトを選んでITO電極６
の側にマイナス1.5Vの電圧を印加し、暗電流を
測定したところID＝５×10-13A／mm2ときわめて小
さい値を示した。次いて、ITO電極６側にマイナ
ス1.5Vの電圧を印加したまま、ITO電極６側か
らG54の螢光灯100Luxを照射したところ、Ip＝８
×10-8Aでありａ−Si：Ｈ膜４の上下にａ−
SixC4-x：Ｈ膜３，５がない場合と比べてほとん
ど変化がなかつた。また、このサンプルを全200
ビツト連続1000時間の通電試験を行なつたとこ
ろ、200ビツト全数不良がなかつた。 First, the interior of the vacuum reaction vessel 10 is evacuated to 10 -6 torr using a diffusion pump and a rotary pump (not shown), and at the same time the heater 11 is operated to remove the ceramic substrate 1 which has been patterned with the Cr electrodes 2, which are the samples 12. Raise the temperature to 250℃. Open the valve 13 and introduce pure silane (SiH 4 ) gas (flow rate 30 SCCM ) and CH 4 gas (flow rate 30 SCCM ) into the vacuum reaction vessel 10 from the gas introduction pipe 14, and at the same time, a diffusion pump whose exhaust system is not shown; From rotary pump system to mechanical booster pump,
Switch to rotary pump system. Next, the pressure inside the vacuum reaction vessel 10 was adjusted to 1.0 torr by opening and closing the valve 15, and then the sample 12 was
A high frequency output (RF Power) of 50 W with a frequency of 13.56 MHz is delivered to the electrode 16 opposite to the high frequency power source 17.
was applied to the a-SixC 4-x :H film 3 of 500 Å for about 1 minute.
was deposited. The high frequency power source 17 is cut off and the introduction of CH 4 gas into the vacuum reaction vessel 10 is stopped. Then, while introducing SiH 4 gas (flow rate 30 SCCM ) into the vacuum reaction vessel 10, the pressure inside the vacuum reaction vessel 10 is reduced.
After adjusting the opening and closing of the valve 15 at 0.3 torr, the high frequency power supply 17 was operated again to supply 10 W of power to the counter electrode 12. Approximately 1 hour, film thickness
After forming the 1 μm a-Si:H film 4, the high frequency power supply 17 was shut off, and the valve 15 was fully opened, at the same time CH 4 gas (flow rate 30 SCCM ) was introduced into the vacuum reaction vessel 10 again from the valve 13. . Vacuum reaction vessel 10
After adjusting the opening and closing of the valve 15 so that the internal pressure becomes 1.0 torr, the high frequency output of 50W is applied to the counter electrode 16 again.
a-SixC 4-x :H film 5 of 750 Å for about 15 minutes.
A film was formed. The heater 11 and the high frequency output were cut off, the valve 13 was closed, and the valve 15 was fully opened to exhaust the residual gas in the vacuum reaction vessel 10, and the vacuum was evacuated until the pressure reached 10 -4 torr. Wait until the temperature of sample 12 falls below 100℃.
It was taken out into the atmosphere, set in an ITO sputtering device (not shown), and an ITO film 6 of 1500 Å was further laminated thereon. Next, the a-Si optical sensor that had undergone all the film-forming steps was annealed at a temperature of 200° C. for 1 hour. In this state, select a few bits out of the 200 bits and connect them to ITO electrode 6.
When a voltage of minus 1.5 V was applied to the side of the electrode and the dark current was measured, it showed an extremely small value of I D =5×10 −13 A/mm 2 . Next, while applying a voltage of -1.5V to the ITO electrode 6 side, a G54 fluorescent lamp of 100 Lux was irradiated from the ITO electrode 6 side, and I p = 8.
×10 -8 A, and a-
SixC 4-x : There was almost no change compared to the case without H films 3 and 5. In addition, this sample has a total of 200
When we conducted an electric current test for 1000 hours of continuous bits, all 200 bits had no defects.
なお、本発明は上記実施例に限るものでない。
すなわち、本発明ではITO電極６とａ−Si：Ｈ膜
４の間に高抵抗膜としてａ−SixC4-x：Ｈ膜５を
用いたが、本発明ではこれに限定する事なく、例
えばａ−SixC4-x膜あるいはハロゲンを含むａ−
Six：ハロゲンであつても良く、また、Ｏ又はＮ
を含むａ−SixO2-x膜、ａ−SixO2-x：Ｈ膜、ａ
−SixO2-x：ハロゲン膜、ａ−SixN1-x膜、ａ−
SixN1-x：Ｈ膜、ａ−SixN1-x：ハロゲン膜であ
つても、光学バンドギヤツプが1.8eV以上暗抵抗
比ρD＝1011Ω・cm以上の高抵抗膜であればまつた
く同様の効果が期待できる。 Note that the present invention is not limited to the above embodiments.
That is, in the present invention, the a-SixC 4-x :H film 5 is used as a high-resistance film between the ITO electrode 6 and the a-Si:H film 4, but the present invention is not limited to this; -SixC 4-x film or a containing halogen-
Six: May be halogen, also O or N
a-SixO 2-x film containing, a-SixO 2-x :H film, a
-SixO 2-x : halogen film, a-SixN 1-x film, a-
SixN 1-x : H film, a-SixN 1-x : Even if it is a halogen film, it is the same as long as it is a high-resistance film with an optical band gap of 1.8 eV or more and a dark resistance ratio ρ D = 10 11 Ω・cm or more. The effects can be expected.
また、本発明のITO電極６とａ−Si：Ｈ膜４の
間に挾んだａ−SixC4-x：Ｈ膜５の膜厚は1000Å
であつたが、種々の実験から、ITO電極６のアニ
ールによるシヨツトキーバリア性能をそこねる事
なく、ａ−SixC4-x：Ｈ膜５の電荷注入阻止性を
充分効果的にするためには、その膜厚は30Å〜
5000Åが適正であると判明した。 Furthermore, the thickness of the a-SixC 4-x :H film 5 sandwiched between the ITO electrode 6 and the a-Si:H film 4 of the present invention is 1000 Å.
However, various experiments have shown that in order to make the charge injection blocking property of the a-SixC 4-x :H film 5 sufficiently effective without impairing the shot key barrier performance by annealing the ITO electrode 6, , the film thickness is 30Å~
5000 Å was found to be appropriate.
その他、本発明は本発明の要旨を変えない範囲
で種々変形実施可能なことは勿論である。 In addition, it goes without saying that the present invention can be modified in various ways without departing from the gist of the invention.
しかして、上記実施例のように基板１上にCr
電極２、SiとＣを母体としたアモルフアスの第１
の高抵抗薄膜３、ａ−Si：Ｈ光導電膜４、SiとＣ
を母体としたアモルフアスの第２の高抵抗薄膜
５、および透光性のITO電極６を順次積層した
後、150〜300℃でアニールしたａ−Si光イメージ
センサでは、ITO電極６側に負の電圧を印加した
時従来の単なるCr電極２、ａ−Si：Ｈ膜４、
ITO電極６を順次積層した構成のａ−Si光センサ
と比べ、光照射時の光電流を変化させることな
く、暗電流をきわめて小さくする事が出来る他、
全ビツト数の連続1000時間の通電試験によつても
不良ビツトが生じる事もなく、実用上好特性の光
電変換部材を提供する事が出来る。 However, as in the above embodiment, there is no Cr on the substrate 1.
Electrode 2, the first amorphous amorphous material with Si and C as the matrix
High resistance thin film 3, a-Si:H photoconductive film 4, Si and C
In the a-Si optical image sensor, a second high-resistance thin film 5 of amorphous amorphous as a matrix and a transparent ITO electrode 6 are sequentially laminated, and then annealed at 150 to 300°C. When a voltage is applied, the conventional simple Cr electrode 2, a-Si:H film 4,
Compared to an a-Si optical sensor that has a structure in which ITO electrodes 6 are sequentially laminated, the dark current can be made extremely small without changing the photocurrent during light irradiation.
No defective bits were generated even in a continuous 1000-hour energization test for all bits, making it possible to provide a photoelectric conversion member with practically good characteristics.
以上説明したように、本発明によれば、光電流
と暗電流との比が大きくSN比を向上させ、かつ、
耐圧に優れ優れ長期に亘つて安定した性能を維持
できる光電変換部材を提供できるといつた効果を
奏する。
As explained above, according to the present invention, the ratio of photocurrent to dark current is large, improving the S/N ratio, and
It is possible to provide a photoelectric conversion member that has excellent voltage resistance and can maintain stable performance over a long period of time.
第１図は本発明の光電変換部材の一実施例を示
す構成説明図、第２図は成膜装置の概略的構成図
である。
１…基板（セラミツク基板）、２…第１の電極
（Cr電極）、３…第１の高抵抗膜（ａ−SixC4-x：
Ｈ膜）、４…アモルフアスシリコン光導電性膜
（ａ−Si：Ｈ膜）、５…第２の高抵抗膜（ａ−
SixC4-x：Ｈ膜）、６…第２の電極（ITO透明電
極）。
FIG. 1 is a structural explanatory diagram showing one embodiment of the photoelectric conversion member of the present invention, and FIG. 2 is a schematic structural diagram of a film forming apparatus. 1... Substrate (ceramic substrate), 2... First electrode (Cr electrode), 3... First high resistance film (a-SixC 4-x :
H film), 4... Amorphous silicon photoconductive film (a-Si:H film), 5... Second high resistance film (a-
SixC 4-x : H film), 6... second electrode (ITO transparent electrode).
Claims (1)
Ｃ，Ｏ，Ｎのいずれか１つ以上を含むアモルフア
スシリコンからなり暗抵抗比が1011Ω・cm以上の
第１の高抵抗膜、Siを母体として水素又はハロゲ
ンの少なくとも一方を含むアモルフアスシリコン
膜、Siを母体としてＣ，Ｏ，Ｎのいずれか１つ以
上を含むアモルフアスシリコンからなり暗抵抗比
が1011Ω・cm以上の第２の高抵抗膜、及び透光性
を有する第２の電極膜をこの順に成膜した後、
150〜300℃の温度でアニールを行うことにより構
成したことを特徴とする光電変換部材。 ２ 第１及び第２の高抵抗膜が水素またはハロゲ
ンの少なくとも一方を含むことを特徴とする特許
請求の範囲第１項記載の光電変換部材。 ３ 第１及び第２の高抵抗膜の光学バンドギヤツ
プが1.8eV以上であることを特徴とする特許請求
の範囲第１項記載の光電変換部材。 ４ 第１の高抵抗膜の膜厚が30Å〜5000Åであ
り、第２の高抵抗膜の膜厚が30Å〜1000Åである
ことを特徴とする特許請求の範囲第１項記載の光
電変換部材。 ５ 透光性の電極がITOであることを特徴とする
特許請求の範囲第１項記載の光電変換部材。[Claims] 1. A first electrode film on a substrate, which is made of amorphous silicon containing Si as a matrix and one or more of C, O, and N, and has a dark resistance ratio of 10 11 Ω·cm or more. A first high-resistance film, an amorphous silicon film containing at least one of hydrogen or halogen using Si as a base material, and an amorphous silicon film containing at least one of C, O, and N using Si as a base material and having a dark resistance ratio. After forming a second high resistance film of 10 11 Ω·cm or more and a second electrode film having translucency in this order,
A photoelectric conversion member constructed by annealing at a temperature of 150 to 300°C. 2. The photoelectric conversion member according to claim 1, wherein the first and second high-resistance films contain at least one of hydrogen and halogen. 3. The photoelectric conversion member according to claim 1, wherein the first and second high-resistance films have an optical bandgap of 1.8 eV or more. 4. The photoelectric conversion member according to claim 1, wherein the first high resistance film has a thickness of 30 Å to 5000 Å, and the second high resistance film has a thickness of 30 Å to 1000 Å. 5. The photoelectric conversion member according to claim 1, wherein the translucent electrode is ITO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58112169A JPS604274A (en) | 1983-06-22 | 1983-06-22 | Photoelectric conversion member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58112169A JPS604274A (en) | 1983-06-22 | 1983-06-22 | Photoelectric conversion member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS604274A JPS604274A (en) | 1985-01-10 |
| JPH0473312B2 true JPH0473312B2 (en) | 1992-11-20 |
Family
ID=14579970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58112169A Granted JPS604274A (en) | 1983-06-22 | 1983-06-22 | Photoelectric conversion member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS604274A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4982246A (en) * | 1989-06-21 | 1991-01-01 | General Electric Company | Schottky photodiode with silicide layer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1078078A (en) * | 1976-03-22 | 1980-05-20 | David E. Carlson | Schottky barrier semiconductor device and method of making same |
| JPS558092A (en) * | 1978-07-04 | 1980-01-21 | Nec Corp | Fine film solar cell and its production method |
| JPS5640284A (en) * | 1979-09-10 | 1981-04-16 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor heterojunction element |
| JPS55151329A (en) * | 1979-05-14 | 1980-11-25 | Shunpei Yamazaki | Fabricating method of semiconductor device |
-
1983
- 1983-06-22 JP JP58112169A patent/JPS604274A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS604274A (en) | 1985-01-10 |
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