JPH04742A - semiconductor integrated circuit - Google Patents

semiconductor integrated circuit

Info

Publication number
JPH04742A
JPH04742A JP10205390A JP10205390A JPH04742A JP H04742 A JPH04742 A JP H04742A JP 10205390 A JP10205390 A JP 10205390A JP 10205390 A JP10205390 A JP 10205390A JP H04742 A JPH04742 A JP H04742A
Authority
JP
Japan
Prior art keywords
wiring
functional block
mcu
section
random logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10205390A
Other languages
Japanese (ja)
Inventor
Hiroyuki Nakao
中尾 浩之
Shinji Suda
須田 眞二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10205390A priority Critical patent/JPH04742A/en
Publication of JPH04742A publication Critical patent/JPH04742A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To realize high density integration by making a lower side of a second functional block shorter than an upper side of a first functional block in a wiring region corresponding to the number of wirings which are wired and connected from the upper side of the first functional block to the second functional block and an upper region of a lower side of the second functional block. CONSTITUTION:Since an R/L part 1 and an MCU part 2 are not connected directly but connected through a peripheral cell 6, a wiring 5 concentrates to the part of an input and output terminal of the periphery cell 6. The wiring 5 is connected from the R/L part 1 and the MCU part 2 to peripheral cells 6, respectively. The wiring 5 concentrates on a wiring region 4 wherein the R/L part 1, the MCU part 2 and the peripheral cell 6 are approximate. In a region wherein the R/L part 1, the MCU part 2 and the peripheral cell 6 are approximate, a length of a functional block of the R/L part 1 in a direction parallel to a side thereto a functional block of the R/L part 1 and a functional block of the MCU part 2 are adjacent is shorter than a functional block of the MCU part 2; therefore, a space region without wiring inside a wiring region is reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体集積回路に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor integrated circuit.

〔従来の技術] 第3図は従来の半導体集積回路のチップレイアウトを示
す平面図である。図において、は)はR/L(ランダム
ロジック)部、(2)はMCU部、(3)は周辺セル領
域、(4)は配線領域である。
[Prior Art] FIG. 3 is a plan view showing a chip layout of a conventional semiconductor integrated circuit. In the figure, ( ) is an R/L (random logic) section, (2) is an MCU section, (3) is a peripheral cell region, and (4) is a wiring region.

第4図は第3図の部分拡大図で、R/L (ランダムロ
ジック)部(1)、MCU部(2)、周辺セル(6)の
接続関係を示す図である。図において、R/L (ラン
ダムロジック)部(1)と周辺セル(6)、MCU部(
2)と周辺セル(6)をそれぞれ接続し、R/L (ラ
ンダムロジック)部(1)とMCU部(2)は周辺セル
(6)を介して接続しである。
FIG. 4 is a partially enlarged view of FIG. 3, showing the connection relationship between the R/L (random logic) section (1), the MCU section (2), and the peripheral cells (6). In the figure, an R/L (random logic) section (1), a peripheral cell (6), an MCU section (
2) and a peripheral cell (6), respectively, and an R/L (random logic) section (1) and an MCU section (2) are connected via the peripheral cell (6).

第4図に示すように、R/L(ランダムロジック)部(
1)とMCU部(2)は直接に接続されず、必す周辺セ
ル(6)を介して接続されているため、周辺セル(6)
の入出力端子の部分に配線(5)が集まる。R/L (
ランダムロジック)部(1)及びMCU部(2)からそ
れぞれ周辺セル(6)に配線(51を接続しており、R
/L (ランダム09229部(1)、MCU部(2)
、周辺セル(6)か近接する配線鎮域圓は、配線(5)
か密集する。
As shown in Fig. 4, the R/L (random logic) section (
1) and the MCU section (2) are not directly connected, but are connected via the peripheral cell (6), so the peripheral cell (6)
Wiring (5) gathers at the input/output terminal portion of the. R/L (
The wiring (51) is connected from the random logic) section (1) and the MCU section (2) to the peripheral cell (6), respectively, and the R
/L (random 09229 part (1), MCU part (2)
, the wiring area adjacent to the peripheral cell (6) is the wiring (5)
or become dense.

〔発明が一決しようとする課題〕[Issues that invention attempts to solve once and for all]

従来の半導体集積回路のチップレイアウトは第3図に示
すように、R/L(ランダムロジック)部とMCU部は
、それぞれ、周辺セルに接続し、R/L(ランダムロジ
ック)部とMCU部を接続する配線についても5周辺セ
ルを介して接続してあり、従って、周辺セルのへd力端
子の部分及び、R/L(ランタムロジック)部、MCU
部、周辺セルか 近接する部分の配線領域に配線か密集
し、配線領域(4)の幅かR/L (ランダムロジック
)部、MCU部、周辺セルか近接する配線領域の部分の
配線の幅によって決定してしまい、R/L (ランダム
ロジック)部、MCU部、周辺セルか近接する配線領域
以外の配線領域内に、配線がレイアウトされていない空
き領域か生じるという問題点かあった。
As shown in Figure 3, the chip layout of a conventional semiconductor integrated circuit is such that the R/L (random logic) section and the MCU section are connected to peripheral cells, respectively. The wiring to be connected is also connected through the 5 peripheral cells, so the peripheral cell's power terminal part, R/L (random logic) part, MCU
If the wiring is densely packed in the wiring area of the adjacent area, the width of the wiring area (4) or the width of the wiring in the R/L (random logic) area, MCU area, or the adjacent wiring area of the peripheral cell. Therefore, there is a problem in that an empty area where no wiring is laid out occurs in the wiring area other than the wiring area adjacent to the R/L (random logic) section, MCU section, or peripheral cells.

この発明は上記のような問題点を解消するためになされ
たもので、R/L (ランダムロジック)部、MCU部
、周辺セルが近接する領域以外の配線領域内に生じる空
き領域を無くすことかできるとともに、配線領域のR線
密度を大きくすることかでき、チップ全体のサイズを小
さくし、半導体集積回路の高集積化を図ることを目的と
する。
This invention was made in order to solve the above-mentioned problems, and aims to eliminate the vacant area that occurs in the wiring area other than the area where the R/L (random logic) section, MCU section, and peripheral cells are adjacent. The present invention aims to increase the R-line density of the wiring region, reduce the overall chip size, and achieve higher integration of semiconductor integrated circuits.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る半一導体集積回路は、R/L (ランダ
ムロジック)部及びMCU部をレイアウトする場合にR
/L (ランダムロジック)部MCUC周部周辺セル間
線領域内の配線の幅を考慮し、配線の数か多く配線の幅
が大きくなった配線領域に接するR/L(ランダムロジ
ック)部の機能ブロックのR/L(ランダムロジック)
部とMCU部の並ぶ方向に垂直な方向の長さを、既存の
MCU部との機能ブロックの前記方向と同じ方向の長さ
よりも短かくするようにしたものである。
In the semiconductor integrated circuit according to the present invention, when laying out the R/L (random logic) section and the MCU section,
/L (Random Logic) part Considering the width of the wiring in the peripheral inter-cell line area of the MCUC, the function of the R/L (Random Logic) part that touches the wiring area where the number of wiring is larger and the width of the wiring is larger. Block R/L (random logic)
The length in the direction perpendicular to the direction in which the MCU section and the MCU section are lined up is made shorter than the length in the same direction of the functional block with the existing MCU section.

〔作 用〕[For production]

この発明における半導体集積回路は配線m域内に生じて
いた空き領域を無くすことかでき、配線領域の配線密度
を同上することができる。
In the semiconductor integrated circuit according to the present invention, it is possible to eliminate the vacant area that has occurred in the wiring area m, and it is possible to increase the wiring density in the wiring area.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第1
図はこの発明の一実施例である半導体集積回路のチップ
レイアウトを示す平面図で、図において、(1)はR/
L (ランダムロジック)部、(2(はMCU部、(3
)は周辺セル領域、(4)は配線領域である。
An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a plan view showing the chip layout of a semiconductor integrated circuit which is an embodiment of the present invention.
L (random logic) part, (2( is MCU part, (3
) is a peripheral cell area, and (4) is a wiring area.

第2図は第1図の部分拡大平面図で、R/L (ランダ
ムロジック)部(1)、MCU部(2)、周辺セル(6
)の接続関係を示した図である。図において、R/L 
(ランダムロジック)部(1)とMCU部(2)は周辺
セルを介して接続しである。
Figure 2 is a partial enlarged plan view of Figure 1, showing the R/L (random logic) section (1), MCU section (2), peripheral cells (6
) is a diagram showing the connection relationship of. In the figure, R/L
(Random logic) section (1) and MCU section (2) are connected via peripheral cells.

第2図に示すように、R/L (ランダムロジック)部
(1)とMCU部(2)は直接に接続されず周辺セル(
6)を介して接続されているため、周辺セル(6)の入
出力端子の部分に配線(5)か集まる。R/L (ラン
ダムロジック)部fi+及びMCU部(2)からそれぞ
れ周辺セル(6)に配線(5)を接続しており、R/L
 (ランダムロジック)部(1)、MCU部(2)周辺
セル(6)が近接する配線領域(4)には配線(5)か
密集する。
As shown in Fig. 2, the R/L (random logic) section (1) and the MCU section (2) are not directly connected and the peripheral cells (
6), the wiring (5) gathers at the input/output terminal portion of the peripheral cell (6). Wiring (5) is connected from the R/L (random logic) section fi+ and the MCU section (2) to the peripheral cell (6), and the R/L
(Random logic) portion (1), MCU portion (2), and wiring region (4) where peripheral cells (6) are close to each other are densely populated with wiring (5).

第2図において、R/L (ランダムロジック)部(1
)、MCU部(2)、周辺セル(6)か近接する領域で
は、R/L (ランダムロジック)部山の機能ブロック
さMCU部(2)の機能ブロックが隣接する辺に平行な
方向のR/L (ランダムロジック)部(1)の機能ブ
ロックの長さは、MCU部(2)の機能ブロックの長さ
に比べて、短かくなっているので、配線領域内で配線さ
れていない空き領域が小さくなる。
In Figure 2, the R/L (random logic) section (1
), MCU unit (2), peripheral cells (6), and in the area adjacent to each other, the functional block of the R/L (random logic) unit is /L (Random logic) The length of the functional block in section (1) is shorter than the length of the functional block in MCU section (2), so the free space in the wiring area that is not wired is becomes smaller.

MClJ部(2)は既存の機能ブロックであり、特定用
途向けの回路のR/L (ランダムロジック)部t1)
は機能ブロックサイズを変更することかできる。
The MClJ section (2) is an existing functional block, and is an R/L (random logic) section t1) of a circuit for a specific application.
can change the functional block size.

R/L (ランダムロジック)部(1)は機能ブロック
サイズを変更しても、面積の変動は少ない。したかって
、R/L (ランダムロジック9部illとMCU部(
2)か並ぶ方向に垂直な方向か小さくなり、R/L (
ランダムロジック)部(1)とMCU部(2)が並ぶ方
向か大きくなっても、配線領域内の空き領域か小さくな
った面積たけ、チップ全体の面積か小さくなる。
Even if the functional block size of the R/L (random logic) section (1) is changed, there is little variation in area. So, R/L (random logic 9 part ill and MCU part (
2) It becomes smaller in the direction perpendicular to the direction in which R/L (
Even if the size of the random logic section (1) and the MCU section (2) increases in the direction in which they are lined up, the area of the entire chip decreases as the free space within the wiring area decreases.

〔発明の効果1 以上のようにこの発明によれば、配線領域内の配線を空
き領域を最小にするようにレイアウトすることができる
ので、配線領域内の配線密度を太き(することかでき、
チップ全体の面積を最小にすることができる。また、高
集積化された半導体集積回路か得られるという効果かあ
る。
[Effect of the invention 1 As described above, according to the present invention, the wiring within the wiring area can be laid out so as to minimize the free space, so the wiring density within the wiring area can be ,
The overall chip area can be minimized. Another advantage is that a highly integrated semiconductor integrated circuit can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例による半導体集積(ロ)路
のチップレイアウトを示す平面図、第2図はR/L (
ランダムロジック)部、 MCU部、周辺セルの接続関
係を示す第1図の部分拡大平面図、第3図は従来の半導
体集積回路のチップレイアウトを示す平面図、第4図は
R/L (ランダムロジック)部、MCU部、周辺セル
の接続関係を示す第3図の部分拡大平面図である。 図において、(1)はR/L (ランダムロジック車、
(2)はMCU部、(3)は周辺セル領域、(4)は配
線領域、(51は配線、(6)は周辺セルを示す。 なお、図中、同一符号は同一、または相当部分を示す。
FIG. 1 is a plan view showing a chip layout of a semiconductor integrated circuit according to an embodiment of the present invention, and FIG.
Figure 1 is a partially enlarged plan view showing the connection relationships among the R/L (random logic) section, MCU section, and peripheral cells; Figure 3 is a plan view showing the chip layout of a conventional semiconductor integrated circuit; Figure 4 is the R/L (Random FIG. 4 is a partially enlarged plan view of FIG. 3 showing a connection relationship among a logic section, an MCU section, and peripheral cells; In the figure, (1) is R/L (random logic car,
(2) is the MCU section, (3) is the peripheral cell area, (4) is the wiring area, (51 is the wiring, and (6) is the peripheral cell. In the figures, the same reference numerals indicate the same or equivalent parts. show.

Claims (1)

【特許請求の範囲】[Claims]  第1の機能ブロックと第2の機能ブロックから成り、
上記第1の機能ブロックの上辺と上記第2の機能ブロッ
クの下辺とを配線領域を挾んで隣接して配置し、上記第
1の機能ブロックの上辺から上記第2の機能ブロック及
び第2の機能ブロックの下辺より上部の領域に配線接続
する配線数に対応した配線領域分を第1の機能ブロック
の上辺に比べ、第2の機能ブロックの下辺を短かくした
ことを特徴とする半導体集積回路。
Consists of a first functional block and a second functional block,
The upper side of the first functional block and the lower side of the second functional block are arranged adjacent to each other with a wiring area in between, and the second functional block and the second function are arranged from the upper side of the first functional block to the lower side of the second functional block. A semiconductor integrated circuit characterized in that the lower side of the second functional block is shorter than the upper side of the first functional block by a wiring area corresponding to the number of wires connected to the area above the lower side of the block.
JP10205390A 1990-04-17 1990-04-17 semiconductor integrated circuit Pending JPH04742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10205390A JPH04742A (en) 1990-04-17 1990-04-17 semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10205390A JPH04742A (en) 1990-04-17 1990-04-17 semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH04742A true JPH04742A (en) 1992-01-06

Family

ID=14317028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10205390A Pending JPH04742A (en) 1990-04-17 1990-04-17 semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH04742A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2261183A2 (en) 2000-03-06 2010-12-15 Nippon Sheet Glass Company, Limited High transmittance glass sheet and method of manufacture the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2261183A2 (en) 2000-03-06 2010-12-15 Nippon Sheet Glass Company, Limited High transmittance glass sheet and method of manufacture the same

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