JPH0474859A - Heater for heat treating device - Google Patents
Heater for heat treating deviceInfo
- Publication number
- JPH0474859A JPH0474859A JP19016590A JP19016590A JPH0474859A JP H0474859 A JPH0474859 A JP H0474859A JP 19016590 A JP19016590 A JP 19016590A JP 19016590 A JP19016590 A JP 19016590A JP H0474859 A JPH0474859 A JP H0474859A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- reflecting mirror
- sealed chamber
- heater
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、熱処理装置の密封室内に設けた基板を加熱す
る加熱装置に関する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a heating device for heating a substrate provided in a sealed chamber of a heat treatment device.
「従来の技術j
従来、レーザビームを用いた酸化物薄膜体積装置等の熱
処理装置においては、密封室内に収容した基板を加熱す
る必要があり、そのために、密封室に開口を形成すると
ともにこの開口を高温耐熱性の赤外線透過材料からなる
閉鎖部材で閉鎖させ、上記密封室の外部に設けた赤外線
ヒータからの熱を反射鏡により上記閉鎖部材を透過して
上記基板に案内し、それによって基板を加熱するように
した加熱装置が提案されている(特開平1−14632
0号公報)。"Conventional technology j Conventionally, in heat treatment equipment such as oxide thin film deposition equipment using a laser beam, it is necessary to heat a substrate housed in a sealed chamber. For this purpose, an opening is formed in the sealed chamber and is closed with a closing member made of a high-temperature heat-resistant infrared transmitting material, and heat from an infrared heater provided outside the sealed chamber is transmitted through the closing member by a reflecting mirror and guided to the substrate, thereby causing the substrate to A heating device for heating has been proposed (Japanese Unexamined Patent Publication No. 1-14632)
Publication No. 0).
この種の加熱装置では、赤外線ヒータを密封室の外部に
設けているので、赤外線ヒータを密封室内に設ける場合
に比較して密封室内の容積を小さくでき、したがって密
封室内を高真空に維持し易くなり、また密封室内に一酸
ノに窒素や酸素等を供給する場合にもそれらを相対的に
少量だけ供給すれば良いという利点がある。In this type of heating device, the infrared heater is installed outside the sealed chamber, so the volume inside the sealed chamber can be reduced compared to when the infrared heater is installed inside the sealed chamber, making it easier to maintain a high vacuum inside the sealed chamber. Furthermore, even when nitrogen, oxygen, etc. are supplied to the monoacid into the sealed chamber, there is an advantage that only a relatively small amount of these needs to be supplied.
「発明が解決しようとする課題」
しかしながら上記加熱装置では、上記反射鏡を赤外線ヒ
ータに隣接させて開口とは反対側に配置し、赤外線ヒー
タから上記開口とは反対側に放射された熱を開口に向け
て反射させるようにしただけなので熱効率が悪かった。"Problems to be Solved by the Invention" However, in the above heating device, the reflecting mirror is placed adjacent to the infrared heater and on the opposite side of the opening, and the heat radiated from the infrared heater to the opposite side of the opening is transmitted through the opening. Thermal efficiency was poor because the light was simply reflected towards the target.
本発明はそのような事情に鑑み、効率よく基板を加熱す
ることができる熱処理装置の加熱装置を提供するもので
ある。In view of such circumstances, the present invention provides a heating device for a heat treatment apparatus that can efficiently heat a substrate.
「課題を解決するための手段」
すなわち本発明は、上述した熱処理装置の加熱装置にお
いて、上記反射鏡を、上記閉鎖部材を挟んで密封室の内
側と外側とに設けるとともに、該反射鏡全体の形状を一
端が開口した有底筒状に形成し、その一端開口部を上記
密封室内で基板に対向させ、かつ反射鏡の密封室外の内
側底部に上記赤外線ヒータを収容したものである。"Means for Solving the Problems" That is, the present invention provides the heating device for the heat treatment apparatus described above, in which the reflecting mirror is provided on the inside and outside of the sealed chamber with the closing member sandwiched therebetween, and the reflecting mirror as a whole is The infrared heater is formed into a bottomed cylindrical shape with one end open, and the one end opening faces the substrate inside the sealed chamber, and the infrared heater is housed at the inner bottom of the reflecting mirror outside the sealed chamber.
「作用」
上記構成によれば、反射鏡が有底筒状に形成されて赤外
線ヒータがその反射鏡の密封室外の内側底部に収容され
ているので、該赤外線ヒータからの熱は大部分が反射鏡
の一端の開口に向けて反射されるようになる。そしてこ
の反射鏡は、上記高温耐熱性の赤外線透過材料からなる
閉鎖部材を挟んで密封室の内側と外側とに設けてあり、
かつ該反射鏡の開口部を上記密封室内で基板に対向させ
ているので、該基板を効率よく加熱することができる。"Operation" According to the above configuration, the reflecting mirror is formed into a cylindrical shape with a bottom, and the infrared heater is housed in the inner bottom part of the reflecting mirror outside the sealed chamber, so that most of the heat from the infrared heater is reflected. It will now be reflected towards the opening at one end of the mirror. The reflecting mirrors are provided on the inside and outside of the sealed chamber with the closing member made of the above-mentioned high-temperature heat-resistant infrared transmitting material sandwiched therebetween,
In addition, since the opening of the reflecting mirror faces the substrate within the sealed chamber, the substrate can be efficiently heated.
「実施例」
以下図示実施例について本発明を説明すると、図におい
て、ステンレス材料によって円筒形状に形成した国体1
の内部に密封室2を形成してあり、この密封室2の内部
にセラミックス製の円板状のテーブル3を水平に配置し
、該テーブル3をセラミックス製の支柱4によって水平
に支持している。上記テーブル3の中央部には孔3aを
穿設してあり、この孔3aを高温耐熱性を有する蓄熱材
料、例えば不透明石英ガラスやゲルマニウムからなる基
板支持台5で覆っている。そしてこの基板支持台5上に
耐酸化性の大きいモリブデン製の板6を介してサファイ
ア製の基板7を載置している。``Example'' The present invention will be described below with reference to an illustrated example.
A sealed chamber 2 is formed inside the sealed chamber 2, and a ceramic disc-shaped table 3 is horizontally arranged inside the sealed chamber 2, and the table 3 is supported horizontally by a ceramic support 4. . A hole 3a is bored in the center of the table 3, and the hole 3a is covered with a substrate support 5 made of a heat storage material having high temperature resistance, such as opaque quartz glass or germanium. A substrate 7 made of sapphire is placed on this substrate support 5 with a plate 6 made of molybdenum having high oxidation resistance interposed therebetween.
上記基板7の斜め上方位置にPb−Zr−Tiの酸化物
からなるターゲット8を設けてあり、このターゲット8
はステンレス製のアーム9の先端部に取付けている。上
記アーム9は密封室1の外部に設けたアクチエータ10
によって昇降させることができるようになっている。A target 8 made of Pb-Zr-Ti oxide is provided diagonally above the substrate 7.
is attached to the tip of arm 9 made of stainless steel. The arm 9 is an actuator 10 provided outside the sealed chamber 1.
It can be raised and lowered by.
上記国体1の上方側面には筒状の導管11の一端を取付
けてあり、この導管11の他端に取付けた透明石英ガラ
スからなる窓12を介して導管11および密封室2内に
レーザビームLを導入することができるようなっている
。このレーザビームしは上記ターゲット8に照射されて
ベーパを発生させ、該ベーパは上記基板7上に堆積され
て薄膜を形成するようになる。One end of a cylindrical conduit 11 is attached to the upper side surface of the national body 1, and a laser beam L is transmitted into the conduit 11 and the sealed chamber 2 through a window 12 made of transparent quartz glass attached to the other end of this conduit 11. It is now possible to introduce This laser beam irradiates the target 8 to generate vapor, which is deposited on the substrate 7 to form a thin film.
また上記国体1に真空通路13を接続するとともに、上
記導管11の外周にガス供給管14を接続し、真空通路
13によって上記密封室1内を真空にするとともに、ガ
ス供給管14から密封室1内にN、0ガスや02ガスを
供給することができるようになっている。このとき、上
記ターゲット8からのベーパが窓12に付着するのを防
止するために、上記国体1に取付けた導管11に窓12
を設けて該窓12とターゲット8とをできるだけ離隔さ
せ、かつガス供給管14をその窓12に隣接させて設け
ている。In addition, a vacuum passage 13 is connected to the national body 1, and a gas supply pipe 14 is connected to the outer periphery of the conduit 11. N, 0 gas and 02 gas can be supplied inside. At this time, in order to prevent the vapor from the target 8 from adhering to the window 12, the window 12 is connected to the conduit 11 attached to the national polity 1.
is provided to separate the window 12 and target 8 as much as possible, and the gas supply pipe 14 is provided adjacent to the window 12.
上記国体1の上面には基板7の直上位置に透明石英ガラ
スからなる窓15を設けてあり、この窓15を介して基
板7にレーザビームを照射することにより、基板7に堆
積中の薄膜の表面を改質することができるようにしてい
る。A window 15 made of transparent quartz glass is provided on the upper surface of the national polity 1 at a position directly above the substrate 7. By irradiating the substrate 7 with a laser beam through this window 15, the thin film being deposited on the substrate 7 can be removed. The surface can be modified.
さらに、上記国体lの底面には大きな開口21を形成し
てあり、この間口21を高温耐熱性の赤外線透過材料、
例えば透明石英ガラスからなる閉鎖部材22で閉鎖して
いる。この閉鎖部材22は、その外周に設けたステンレ
ス製の枠部材23を上記国体1に図示しないボルトによ
って固定することによって、国体1に取付けている。Furthermore, a large opening 21 is formed in the bottom surface of the national polity l, and this opening 21 is filled with a high-temperature heat-resistant infrared transmitting material.
It is closed with a closing member 22 made of transparent quartz glass, for example. This closing member 22 is attached to the national polity 1 by fixing a stainless steel frame member 23 provided on its outer periphery to the national polity 1 with bolts (not shown).
上記基板支持台5および基板7を加熱する赤外線ヒータ
24は密封室1の外部に設けてあり、この赤外線ヒータ
24からの熱を反射鏡25により上記閉鎖部材22を透
過して上記基板支持台5に案内することができるように
している。上記反射鏡25は上記閉鎖部材22を挟んで
密封室2の内側と外側とに設けてあり、外側の反射鏡2
5Aは底部を丸くしたコツプ形状に、内側の反射125
Bは上方が窄まった円筒形状に形成し、それによって反
射鏡25の全体形状を一端が開口した有底筒状に、図示
実施例では上端部を切除した卵形に形成している。An infrared heater 24 for heating the substrate support stand 5 and the substrate 7 is provided outside the sealed chamber 1, and the heat from the infrared heater 24 is transmitted through the closure member 22 by a reflecting mirror 25 and is transmitted to the substrate support stand 5. I am able to guide you. The reflecting mirrors 25 are provided on the inside and outside of the sealed chamber 2 with the closing member 22 in between.
5A has a rounded bottom shape with 125 inner reflections.
B is formed into a cylindrical shape narrowing at the top, thereby making the overall shape of the reflecting mirror 25 a bottomed cylinder with one end open, and in the illustrated embodiment an oval shape with the upper end cut off.
上記外側の反射鏡25Aは枠部材23の内周面に、また
内側の反射鏡25Bは開口21の内周面にそれぞれ取付
けてあり、かつ外側のコツプ形状の反射鏡25A内に上
記赤外線ヒータ24を収容し、また内側の円筒形状の反
射鏡25Bの上端開口部を上記密封室1内で基板支持台
5に対向させている。The outer reflective mirror 25A is attached to the inner peripheral surface of the frame member 23, and the inner reflective mirror 25B is attached to the inner peripheral surface of the opening 21. The upper end opening of the inner cylindrical reflecting mirror 25B faces the substrate support stand 5 within the sealed chamber 1.
以上の構成において、基板7上に薄膜を形成する際には
、上記真空通路13によって密封室1内を真空に維持す
るとともに、ガス供給管14から密封室1内に所要濃度
のガスを供給する。また赤外線ヒータ24に通電して該
赤外線ヒータ24からの熱を外側の反射g 25Aによ
って透明石英ガラスからなる閉鎖部材22に反射案内し
、この閉鎖部材22を透過した熱を内側の反射鏡25B
を介して基板支持台5に反射案内する。これにより蓄熱
材料からなる基板支持台5が加熱されて蓄熱され、該基
板支持台5の熱によって上記基板7が800°C前後に
加熱される。In the above configuration, when forming a thin film on the substrate 7, the vacuum passage 13 maintains the inside of the sealed chamber 1 in a vacuum, and the gas supply pipe 14 supplies a required concentration of gas into the sealed chamber 1. . Further, the infrared heater 24 is energized, and the heat from the infrared heater 24 is reflected and guided to the closing member 22 made of transparent quartz glass by the outer reflecting mirror 25A, and the heat transmitted through the closing member 22 is reflected to the inner reflecting mirror 25B.
It is reflected and guided to the substrate support stand 5 via. As a result, the substrate support stand 5 made of a heat storage material is heated and heat is stored, and the substrate 7 is heated to around 800°C by the heat of the substrate support stand 5.
このとき、上記赤外線ヒータ24を全体として端が開口
した有底筒状となる反射鏡25内に収容しているので、
該赤外線ヒータ24からの熱を効率的に基板支持台5お
よび基板7に案内して基板7を加熱することができる。At this time, since the infrared heater 24 is housed in a reflecting mirror 25 that has a bottomed cylindrical shape with an open end,
The heat from the infrared heater 24 can be efficiently guided to the substrate support stand 5 and the substrate 7 to heat the substrate 7.
そして赤外線ヒータ24からの熱がステンレス類の国体
1等を過度に加熱することがなく、しかも基板支持台5
を支持するテーブル3は耐高温、耐酸化性に優れたセラ
ミックスから製造しているので、ステンレスの加熱によ
りその内部からCが発生することが防止でき、それによ
って基板7上に堆積される薄膜の純度が低下するのが防
止できる。In addition, the heat from the infrared heater 24 does not excessively heat the stainless steel national body 1, etc., and the substrate support 5
The table 3 that supports the substrate 7 is made of ceramic with excellent high temperature resistance and oxidation resistance, so it is possible to prevent C from being generated from inside the stainless steel by heating it, thereby preventing the formation of a thin film deposited on the substrate 7. Degradation of purity can be prevented.
そして上述した状態で図示しないレーザ発振器からレー
ザビームを放射させ、該レーザビームを急12から導管
11を介してターゲット8に照射させれば、該ターゲッ
ト8からベーパが発生されて基板7上に堆積され、薄膜
を形成するようになる。Then, in the above-described state, if a laser beam is emitted from a laser oscillator (not shown) and the target 8 is irradiated from the laser beam 12 through the conduit 11, vapor is generated from the target 8 and deposited on the substrate 7. and forms a thin film.
「発明の効果」
以上のように、本発明によれば、反射鏡を有底筒状に形
成して赤外線ヒータをその内部に収容しているので、該
赤外線ヒータからの熱を効率よく基板に伝達して該基板
を効果的に加熱することができるという効果が得られる
。"Effects of the Invention" As described above, according to the present invention, the reflecting mirror is formed into a bottomed cylindrical shape and the infrared heater is housed therein, so that the heat from the infrared heater is efficiently transferred to the substrate. The effect is that the substrate can be effectively heated by the heat transfer.
図は本発明の一実施例を示す断面図である。
1・・・国体 2・・・密封室5・・・基板支
持台 7・・・基板The figure is a sectional view showing one embodiment of the present invention. 1... National polity 2... Sealed room 5... Board support stand 7... Board
Claims (1)
を閉鎖する高温耐熱性の赤外線透過材料からなる閉鎖部
材と、上記密封室の外部に設けた赤外線ヒータと、この
赤外線ヒータからの熱を上記閉鎖部材を透過して上記基
板に案内する反射鏡とを備える熱処理装置の加熱装置に
おいて、 上記反射鏡を、上記閉鎖部材を挟んで密封室の内側と外
側とに設けるとともに、該反射鏡全体の形状を一端が開
口した有底筒状に形成し、その一端開口部を上記密封室
内で基板に対向させ、かつ反射鏡の密封室外の内側底部
に上記赤外線ヒータを収容したことを特徴とする熱処理
装置の加熱装置。[Scope of Claims] A sealed chamber containing a substrate, a closing member made of a high temperature resistant infrared transmitting material for closing an opening formed in the sealed chamber, an infrared heater provided outside the sealed chamber, and an infrared heater provided outside the sealed chamber; A heating device for a heat treatment apparatus comprising a reflecting mirror that guides heat from an infrared heater to the substrate through the closing member, wherein the reflecting mirror is provided on the inside and outside of the sealed chamber with the closing member in between. At the same time, the overall shape of the reflecting mirror is formed into a bottomed cylindrical shape with one end open, the one end opening facing the substrate within the sealed chamber, and the infrared heater is housed at the inner bottom of the reflecting mirror outside the sealed chamber. A heating device for a heat treatment device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19016590A JPH0474859A (en) | 1990-07-18 | 1990-07-18 | Heater for heat treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19016590A JPH0474859A (en) | 1990-07-18 | 1990-07-18 | Heater for heat treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0474859A true JPH0474859A (en) | 1992-03-10 |
Family
ID=16253515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19016590A Pending JPH0474859A (en) | 1990-07-18 | 1990-07-18 | Heater for heat treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0474859A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
-
1990
- 1990-07-18 JP JP19016590A patent/JPH0474859A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR940005827A (en) | Laser ablation apparatus and thin film formation method | |
| JPH0474859A (en) | Heater for heat treating device | |
| TW503450B (en) | Lamp based scanning rapid thermal processing | |
| JPH08139047A (en) | Heat treatment apparatus | |
| JPH03291940A (en) | Uniformly heating structure of semiconductor manufacturing device | |
| JPH06168894A (en) | Substrate heating system | |
| KR20100040747A (en) | Heat treating device | |
| JPS60189927A (en) | Vapor phase reactor | |
| JP2686498B2 (en) | Semiconductor manufacturing equipment | |
| JP3604425B2 (en) | Vapor phase growth equipment | |
| JP2006111961A (en) | Vapor deposition source system | |
| JPS6157907B2 (en) | ||
| JP2507905Y2 (en) | Radiation introduction heating device | |
| JPH0297670A (en) | Thin film manufacturing equipment | |
| JPH078025Y2 (en) | Image furnace | |
| JPS62130275A (en) | Radiation introducing window | |
| JPH0483866A (en) | Laser vapor deposition device | |
| JPH0545052B2 (en) | ||
| JP2976363B2 (en) | Vacuum heat treatment equipment | |
| JPH0510354Y2 (en) | ||
| JPH01163594A (en) | High-temperature observation furnace by infrared image heating | |
| JPS62127469A (en) | Vapor phase growth equipment | |
| JPH06151308A (en) | Evaporation equipment | |
| JPH03145580A (en) | getta pump | |
| JPH0841629A (en) | Cell shutter and its use method |