JPH0474860A - Ito sputtering target material and its production - Google Patents
Ito sputtering target material and its productionInfo
- Publication number
- JPH0474860A JPH0474860A JP2185129A JP18512990A JPH0474860A JP H0474860 A JPH0474860 A JP H0474860A JP 2185129 A JP2185129 A JP 2185129A JP 18512990 A JP18512990 A JP 18512990A JP H0474860 A JPH0474860 A JP H0474860A
- Authority
- JP
- Japan
- Prior art keywords
- ito
- powder
- specific surface
- surface area
- in2o3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 8
- 239000013077 target material Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 25
- 229910003437 indium oxide Inorganic materials 0.000 claims description 15
- 238000010304 firing Methods 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 8
- 239000000843 powder Substances 0.000 abstract description 37
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 7
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 4
- 238000001272 pressureless sintering Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005467 ceramic manufacturing process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）技術分野
本発明は、透明導電膜形成用の高密度ＩＴＯ（錫を含有
する酸化インジウムのことで、 Ｉｎｄｉｕｍ−Ｔｉｎ
−Ｏｗｉｄｅの略称）スパッタリングターゲツト材とそ
の製造方法に関するものである。Detailed Description of the Invention (a) Technical field The present invention relates to high-density ITO (indium oxide containing tin) for forming transparent conductive films.
The present invention relates to a sputtering target material (abbreviation of -Owide) and a method for manufacturing the same.
（ロ）従来技術
薄膜技術の発達に伴ない、表示素子分野などでは透明導
電膜が太陽電池や液晶デイスプレィ等に利用されて来て
おり、その中でも酸化インジウムおよび酸化錫からなる
Ｉ ｎ？ｏ、・５ｎ０２ （ＩＴＯ）膜は光透過性や
導電性等の特性を有することから、酸化物系透明導電膜
として広範囲に利用されている。(B) Prior art With the development of thin film technology, transparent conductive films have been used in the field of display devices, such as solar cells and liquid crystal displays. o,.5n02 (ITO) film has properties such as light transparency and conductivity, and is therefore widely used as an oxide-based transparent conductive film.
ＩＴＯからなる透明導電膜の作製法としては、塗布法、
ＣＶＤ法、真空蒸着法、電子ビーム蒸着法、インジウム
−錫メタルターゲットを用いた反応性スパッタ法、およ
びＩＴＯターゲットを用いたスパッタリング法等が提案
されているが、このうちＩＴＯターゲットを用いたスパ
ッタリング法が主流となっているのが現状である。Methods for producing transparent conductive films made of ITO include coating methods,
CVD method, vacuum evaporation method, electron beam evaporation method, reactive sputtering method using indium-tin metal target, sputtering method using ITO target, etc. have been proposed, but among these, sputtering method using ITO target Currently, it is the mainstream.
このＩＴＯターゲットの成形方法としては、下記の諸法
が提案されているが、未だ多くの解決すべき問題点があ
る。The following methods have been proposed as methods for forming this ITO target, but there are still many problems to be solved.
工）熱間加圧成形法： （特開昭６１−５５８１１号公
報参照）
この方法はＩ ｎ２０３と５ｎ０２の粉末材料を高温高
圧（１ｔｏｎ／Ｃｍ２で１×ｌＯ２′℃程度以上）で圧
搾して板状成形体を作製するため、簡単に高ｒ変化でき
るが、装と及び型が極めて高価となり、生産性も１−１
０枚／１〜２日程度と慈いので極めて高価なターグー２
１・となる。Engineering) Hot pressing method: (Refer to Japanese Patent Application Laid-Open No. 61-55811) This method involves compressing the powder materials of In203 and 5n02 at high temperature and high pressure (1 ton/Cm2, about 1×1O2′℃ or higher). Since a plate-shaped molded body is produced, it is easy to change the r to a high value, but the mounting and mold are extremely expensive, and the productivity is 1-1.
Targu 2 is extremely expensive as it is only 0 sheets/1 to 2 days.
It becomes 1.
ＩＪ ）冷間静水圧プレス法・ （特開平１−″２９０
５５１号公報参照）
ＩＴＯ粉末をバインダーと共に金型に装入し加圧して予
備成形体を作り、該予備成形体を脱脂後５ ｔｏｎ／ｃ
ｍ２程度で再プレスした後、焼成する方法であるため、
製造工程が極めて複雑で多工程を必要とする上、更に高
圧処理を必要とするので技術的、経済的に問題があり、
実用的でない。IJ) Cold isostatic pressing method (Unexamined Japanese Patent Application Hei 1-''290
(Refer to Publication No. 551) ITO powder is charged into a mold together with a binder and pressurized to make a preform, and after degreasing the preform, 5 ton/c
Because it is a method of re-pressing at about m2 and then firing,
The manufacturing process is extremely complex and requires multiple steps, and it also requires high pressure treatment, which poses technical and economical problems.
Not practical.
ｍ）鋳込み成形法・ （＃開平１−２９０５５０号公叩
参照）
酸化インジウム−酸化錫の成形体を泥禁鋳込み成型法に
より成形し、該成形体を焼成する方法であり、この方法
ではスラリーの流動特性の適正化を図ると粉の焼結性が
劣化するため、高密度化にはおのずから限界がある。m) Cast molding method (Refer to Publication No. 1-290550) This is a method in which an indium oxide-tin oxide molded body is molded by a mud-free casting method, and the molded body is fired. If the flow characteristics are optimized, the sinterability of the powder deteriorates, so there is a natural limit to increasing the density.
以上列記したようなＩＴＯターゲットの高密度化を実現
するために、熱間加圧成形法を用いたり、３〜５ ｔｏ
ｎ／ｃｍ２の高圧で再プレスを行なったり、又は高濃度
のスラリーを型に流し込んで鋳込むことで、一応相対密
度７０％以との成形体が得られるが、上記のように各方
法とも解決すべき問題点が多い。In order to achieve higher density of the ITO target as listed above, hot pressing method is used, 3 to 5 to
A molded product with a relative density of 70% or more can be obtained by re-pressing at a high pressure of n/cm2 or by pouring a highly concentrated slurry into a mold, but as mentioned above, each method solves the problem. There are many issues that need to be addressed.
また、通常の冷間加圧成形法や常圧焼結法では相対密度
が６０％程度であって高密度とはいえず、所期の目的を
達し得ないのである。Further, in the ordinary cold pressing method and pressureless sintering method, the relative density is about 60%, which cannot be said to be high density, and the desired purpose cannot be achieved.
（ハ）発明の開示
本発明は上記のような状況に鑑み、冷間加圧成形法およ
び常圧焼結法による高密度ＩＴＯターゲット材について
検討の結果、原料粉体の比表面積値あるいは粉体を構成
する平均結晶子径が目的とする焼結体密度に著しく影響
を及ぼすとの知見を得、ＩＴＯターゲット製造時の原料
粉（主原料である酸化インジウム）の比表面積値（又は
結晶子径）を微細粒子範囲に限定することにより、特殊
な高温高圧処理を行なうことなく、通常のセラミックス
の成形及び焼成条件で、高密度ＩＴＯターゲットを製造
することができる方法を見出したのである。(c) Disclosure of the Invention In view of the above-mentioned circumstances, the present invention has been made based on the results of studies on high-density ITO target materials produced by cold pressing and pressureless sintering. We obtained the knowledge that the average crystallite diameter constituting the ) by limiting the amount of ITO to a fine particle range, we have discovered a method that allows high-density ITO targets to be manufactured under normal ceramic forming and firing conditions without special high-temperature, high-pressure treatment.
即ち、第１の発明は、比表面積値１０ｍ２／ｇ以上の酸
化インジウムを全原料中の８５〜９５ｗｔ％使用してな
る相対密度７０％以上の焼結体からなるＩＴＯスパッタ
リングターゲット材である。That is, the first invention is an ITO sputtering target material made of a sintered body with a relative density of 70% or more and made by using 85 to 95 wt% of indium oxide having a specific surface area of 10 m2/g or more based on the total raw material.
また、第２の発明は、全体の８５〜９５ｗｔ％が比表面
積値１０ｍ２／ｇ以上の酸化インジウムである原料を冷
間加圧成形した後、常圧焼成することにより、相対密度
７０％以りの焼結体からなるＩＴｏスパッタリングター
ゲー、ト材を製造する方法である。In addition, the second invention is characterized in that a raw material in which 85 to 95 wt% of the total is indium oxide with a specific surface area of 10 m2/g or more is cold-pressed and then sintered under normal pressure to achieve a relative density of 70% or more. This is a method for manufacturing an ITo sputtering target material made of a sintered body.
次に、本発明の詳細な説明する。Next, the present invention will be explained in detail.
本発明者等は上記の知見に基き、多くの試作・実験を重
ね、原料粉末である酸化インジウムの比表面積を太きく
すること、換言すれば除粉粉末の平均結晶子径を超微細
な粒子範囲に限定することにより、冷間成形圧カニ１〜
３ ｔｏｎ／ａｍ” 、焼成温度二大気中１３００〜１
６００℃の条件で成形・焼成することにより、相対密度
７０〜９５％の焼結体が得られることを見出したのであ
る。Based on the above knowledge, the present inventors have conducted many trial productions and experiments, and have succeeded in increasing the specific surface area of the raw material powder, indium oxide. By limiting the range, cold forming pressure crab 1~
3 ton/am”, firing temperature 1300-1 in two atmospheres
It was discovered that a sintered body with a relative density of 70 to 95% can be obtained by molding and firing at 600°C.
原料粉末の比表面積値としては、１０ｍＺ／ｇ以ト、好
ましくは１０〜６０ｍ２／ｇで、最も好ましくは２０〜
４０ｍ２７ｇであり、この条件範囲の原料粉末である酸
化インジウムを使用することにより、相対密度の高い焼
結体が得られるのである。The specific surface area value of the raw material powder is 10 mZ/g or more, preferably 10 to 60 m2/g, and most preferably 20 to 60 m2/g.
By using indium oxide as a raw material powder within this condition range, a sintered body with a high relative density can be obtained.
本発明で使用する酸化インジウム粉末としては、比表面
積値１０ｍ２／ｇ以上、換言すれば平均結晶子径として
０．Ｏ１〜０．０８Ｂｍの範囲のものであれば、通常の
市販品の酸化インジウム粉と酸化錫粉末とを所定割合に
混合したもの、あるいは共沈法で製造した粉末でも差支
えなく、更に導電性および光透過性向上のために第三成
分を微量添加しても良い。The indium oxide powder used in the present invention has a specific surface area of 10 m2/g or more, in other words, an average crystallite diameter of 0. As long as it is in the range of O1 to 0.08Bm, it may be a mixture of commercially available indium oxide powder and tin oxide powder in a predetermined ratio, or a powder produced by a coprecipitation method. A trace amount of a third component may be added to improve light transmittance.
酸化インジウムの配合比としては、原料全体の８５〜９
５ｙｔ％が相対密度７０％以上の焼結体を得るために必
要である。The blending ratio of indium oxide is 85 to 9 of the total raw materials.
5yt% is necessary to obtain a sintered body with a relative density of 70% or more.
次に、成形方法としては、金型を用いた冷間加圧成形で
も、ゴム型を用いた冷間静水圧成形法でも良いが、原料
粉末の比表面積値が１０ｍ２／ｇ以上と大きいため、ス
ラリー化した時の粘性が高くなり、鋳込み成形法は適切
とはいえない。Next, the molding method may be cold pressing using a mold or cold isostatic pressing using a rubber mold, but since the specific surface area value of the raw material powder is as large as 10 m2/g or more, The cast molding method is not suitable because the viscosity becomes high when it is made into a slurry.
成形時の成形圧力としては、冷開成形圧力１〜３ ｔｏ
ｎ／ｃ■２で１更に焼結体の相対密度を９０％以北する
ためには１．５ ｔｏｎ／ｃ１２以上が好ましいのであ
る。成形圧力が１ ｔｏｎ／ｃ■２未満の場合でも、応
所期の目的を達成することができ、例えば成形圧力２５
０ Ｋｇ／ ｃｍ２．焼結温度１５００℃、焼結時間６
０分間の条件で製造した焼結体の相対密度は７３％程度
である。The molding pressure during molding is a cold-opening molding pressure of 1 to 3 to
In order to increase the relative density of the sintered body to more than 90%, n/c2 is preferably 1.5 ton/c12 or more. Even if the molding pressure is less than 1 ton/c 2, the desired purpose can be achieved; for example, if the molding pressure is 25
0 Kg/cm2. Sintering temperature 1500℃, sintering time 6
The relative density of the sintered body manufactured under the conditions of 0 minutes was about 73%.
本発明は上記のように構成されてなり、比表面積値１０
ｍ２／ｇ以上、好ましくはｌＯ〜６０ｍ２／ｇ、最も好
ましくは２０〜４０ｍ２／Ｈの酸化インジウム粉末を８
５〜９５ｗｔ％と、酸化錫を５〜１５ｗｔ％、その他不
可避不純物からなる原料粉末を使用し、冷間加圧成形法
で成形し、常圧焼結法により焼結して製造された相対密
度７０％以上の高密度ＩＴＯスパッタリング材である。The present invention is constructed as described above, and has a specific surface area of 10
m2/g or more, preferably lO to 60 m2/g, most preferably 20 to 40 m2/H of indium oxide powder
Relative density manufactured by using raw material powder consisting of 5 to 95 wt%, 5 to 15 wt% of tin oxide, and other unavoidable impurities, molded by cold pressing method, and sintered by pressureless sintering method. It is a high-density ITO sputtering material of 70% or more.
上記の比表面積値１０〜６０ｍ２／ｇの微粉末は、透過
型電子顕微鏡で精査の結果、−次粒子が０．０１〜Ｑ、
Ｑ８ｐｍの範囲であり、この−次粒子を「結晶子」と呼
称した。即ち、乎均結晶子径０．０１〜０．０８ｐｍ粉
末が比表面積１０〜６０ｍ２／ｇの粉末に相当するので
ある。The above-mentioned fine powder with a specific surface area value of 10 to 60 m2/g was carefully examined using a transmission electron microscope, and the -order particles were 0.01 to Q.
Q8pm range, and these secondary particles were called "crystallites". That is, a powder having an average crystallite diameter of 0.01 to 0.08 pm corresponds to a powder having a specific surface area of 10 to 60 m2/g.
次に、本発明を実施例により説明する。Next, the present invention will be explained by examples.
（ニ）実施例
実施例１
比表面積３６ｍ２／ｇの酸化インジウム微粉末１９０ｇ
と酸化錫微粉末１０ｇを採取し、この原料粉末に対して
１０ｗｔ％の水をパインターとして添加し、メノウ製自
動乳鉢で５時間混合してＩＴＯ粉を得た。(d) Examples Example 1 190 g of indium oxide fine powder with a specific surface area of 36 m2/g
10 g of tin oxide fine powder was collected, 10 wt % of water was added as a pinter to this raw material powder, and the mixture was mixed in an automatic agate mortar for 5 hours to obtain ITO powder.
このＩＴＯ粉を目開き２００ｐｍの篩で造粒した後、内
径２５．４ｍｍφの金型に充填して約１０ｇのペレット
とし、１．５ ｔｏｎ／ｃｍｚで冷間加圧成形した後、
１５００℃で１時間常圧焼成して焼結体を製造した。こ
の焼結体の相対密度は９０．２％であった。This ITO powder was granulated through a sieve with an opening of 200 pm, then filled into a mold with an inner diameter of 25.4 mm to form pellets of about 10 g, and after being cold-pressed at 1.5 ton/cmz,
A sintered body was produced by firing at 1500° C. for 1 hour under normal pressure. The relative density of this sintered body was 90.2%.
また、上記と同様の原料粉末を使用し、同様の操作を行
ない、加圧成形圧を０．２５ｔｏｎ／ｃ篇２と３．０ｔ
ｏｎ／ｃｍ２に変化して成形した後、各１５００℃で１
時間常圧焼成して焼結体を製造した。In addition, using the same raw material powder as above and performing the same operation, the pressure molding pressure was set to 0.25 ton/c version 2 and 3.0 t.
on/cm2, and then molded at 1,500°C.
A sintered body was produced by firing at normal pressure for a period of time.
この各焼結体の相対密度は、０．２５ｔｏｎ／ｃｍ２成
形の場合が７３．０％であり、３．Ｏｔｏｎ／ｃｍ２の
場合は９４．５％であった・
実施例２
比表面積３６ｍ２／ｇの酸化インジウム３８００ｇと酸
化錫微粉末２００ｇを採取し、この原料粉末に対して１
０ｗｔ％の水をバインダーとして添加し、実施例１と同
様に混合・造粒処理した後、１５０Ｘ４５０ｍｍの金型
に充填し、１ ｔｏｎ／ａｍ２の圧力で冷間加圧成形し
た後、１５００℃で３時間常圧焼成して焼結体を製造し
た。The relative density of each sintered body is 73.0% in the case of 0.25 ton/cm2 molding, and 3. In the case of Oton/cm2, it was 94.5%. Example 2 3800 g of indium oxide with a specific surface area of 36 m2/g and 200 g of tin oxide fine powder were collected, and 1
0 wt% water was added as a binder, mixed and granulated in the same manner as in Example 1, then filled into a 150 x 450 mm mold, cold pressed at a pressure of 1 ton/am2, and then heated at 1500°C. A sintered body was produced by firing at normal pressure for 3 hours.
この焼結体の相対密度は８４，０％であった。The relative density of this sintered body was 84.0%.
実施例３
比表面積５５ｍ２／Ｈのインジウム微粉末１９０ｇと酸
化錫微粉末１０ｇを採取し、この原料粉末に対して１０
ｗｔ％の水をバインダーとして添加し、メノウ製自動乳
鉢で５時間混合し、ＩＴＯ粉を得た。このＩＴＯ粉を目
開き２００終ｍの篩で裏ごしして造粒し、内径２５．４
層■φの金型に約１０ｇ充填し、成形圧力１．５ ｔｏ
ｎ／ｃｍ”で冷開成形した後、１５００℃で１時間常圧
焼結して焼結体を製造した。Example 3 190 g of indium fine powder and 10 g of tin oxide fine powder with a specific surface area of 55 m2/H were collected, and 10 g of
Wt% of water was added as a binder and mixed in an automatic agate mortar for 5 hours to obtain ITO powder. This ITO powder was strained and granulated through a sieve with an opening of 200 m, and the inner diameter was 25.4 m.
Fill approximately 10g into a mold with layer ■φ, and molding pressure 1.5 to
After cold-open molding at 1500° C. for 1 hour under normal pressure, a sintered body was produced.
この焼結体の相対密度は８３．５％であった。The relative density of this sintered body was 83.5%.
比較例１
比表面積６ｍ２／ｇと８ｍ２／Ｈの酸化インジウム微粉
末を各準備し、各酸化インジウム微粉末に酸化錫微粉末
を各５ｗｔ％となるように配合し、更にバインダーとし
て水を各１０ｗｔ％となるように添加した後、実施例１
と同様に各配合原料粉をメノウ製自動乳鉢で５時間混合
し、各ＩＴＯ粉を得た。Comparative Example 1 Indium oxide fine powders with specific surface areas of 6 m2/g and 8 m2/H were prepared, and each indium oxide fine powder was blended with tin oxide fine powder at a concentration of 5 wt%, and water was added as a binder in an amount of 10 wt% each. %, Example 1
Similarly, each blended raw material powder was mixed in an automatic agate mortar for 5 hours to obtain each ITO powder.
このＩＴＯ粉を目開き２００ｇｍの篩で裏ごしして造粒
し、内径２５．４ｍｍφの金型にそれぞれ約１０ｇ充填
し、成形圧力１ ｔｏｎ／ｃｍＺで冷間加圧成形した後
、１５００℃で１時間常圧焼成して焼結体を製造した。This ITO powder was strained through a sieve with an opening of 200 gm and granulated, and about 10 g of each was filled into a mold with an inner diameter of 25.4 mmφ, and after cold pressing at a molding pressure of 1 ton/cmZ, the powder was granulated at 1500°C. A sintered body was produced by firing at normal pressure for a period of time.
各焼結体の相対密度は、比表面１１６ｍ２／Ｈの酸化イ
ンジウムを主原料粉とした焼結体の相対密度は５６．３
％であり、比表面積８ｍＺ／ｇの場合の相対密度は６０
．１％であった。The relative density of each sintered body is 56.3.
%, and when the specific surface area is 8 mZ/g, the relative density is 60
．． It was 1%.
（ホ）発明の効果
本発明法は上述したように、従来のような特殊な高温・
高圧処理や特殊で高価な装置を使用することなく、通常
のセラミックス製造プロセスと同様な簡単な工程で、冷
間成形圧力も低く、生産性も１時間当り２０〜３０枚程
度と高いので、低コストでの量産が可能となる。(e) Effects of the invention As mentioned above, the method of the present invention
It is a simple process similar to the normal ceramic manufacturing process, without the use of high-pressure treatment or special and expensive equipment, and the cold forming pressure is low, and the productivity is high at about 20 to 30 pieces per hour. Mass production is possible at low cost.
また、本発明によれば、常圧焼結法で従来法では達成で
きなかった高密度の透明導電膜スパッタリングターゲツ
ト材が実現できたのである。Furthermore, according to the present invention, a high-density transparent conductive film sputtering target material, which could not be achieved by conventional methods, could be realized by pressureless sintering.
しかも、本発明によれば到達相対密度が高いので、高品
質の透明導電膜用ターゲットを製造することができるの
である。Moreover, according to the present invention, since the achieved relative density is high, a high quality target for a transparent conductive film can be manufactured.
Claims (2)
を全原料中の８５〜９５ｗｔ％使用してなる相対密度７
０％以上の焼結体からなるＩＴＯスパッタリングターゲ
ット材。(1) Relative density 7 made by using 85 to 95 wt% of indium oxide with a specific surface area of 10 m^2/g or more based on the total raw material
ITO sputtering target material consisting of 0% or more sintered body.
／ｇ以上の酸化インジウムである原料を冷間加圧成形し
た後、常圧焼成することにより、相対密度７０％以上の
焼結体からなるＩＴＯスパッタリングターゲット材を製
造する方法。(2) 85-95wt% of the total has a specific surface area of 10m^2
A method for manufacturing an ITO sputtering target material consisting of a sintered body with a relative density of 70% or more by cold-pressing a raw material of indium oxide with a density of 70% or more and then firing at normal pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18512990A JP3184977B2 (en) | 1990-07-12 | 1990-07-12 | Method for producing ITO sputtering target material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18512990A JP3184977B2 (en) | 1990-07-12 | 1990-07-12 | Method for producing ITO sputtering target material |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11163949A Division JP2000080469A (en) | 1999-06-10 | 1999-06-10 | ITO sputtering target material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0474860A true JPH0474860A (en) | 1992-03-10 |
| JP3184977B2 JP3184977B2 (en) | 2001-07-09 |
Family
ID=16165383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18512990A Expired - Fee Related JP3184977B2 (en) | 1990-07-12 | 1990-07-12 | Method for producing ITO sputtering target material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3184977B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656216A (en) * | 1994-08-25 | 1997-08-12 | Sony Corporation | Method for making metal oxide sputtering targets (barrier powder envelope) |
| US6582641B1 (en) | 1994-08-25 | 2003-06-24 | Praxair S.T. Technology, Inc. | Apparatus and method for making metal oxide sputtering targets |
| US7799312B2 (en) | 2002-03-22 | 2010-09-21 | Samsung Corning Precision Glass Co., Ltd. | Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor |
| CN115893989A (en) * | 2022-12-29 | 2023-04-04 | 芜湖映日科技股份有限公司 | Process method for refining ITO target material micro grain structure and enhancing mechanical strength |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290551A (en) * | 1988-05-16 | 1989-11-22 | Tosoh Corp | Production of target for sputtering to be used for production of transparent electroconductive film |
| JPH0243356A (en) * | 1988-08-04 | 1990-02-13 | Tosoh Corp | Production of sputtering target for transparent conductive film |
| JPH02297812A (en) * | 1989-02-28 | 1990-12-10 | Tosoh Corp | Sintered body of oxide, manufacture thereof, and target using same |
| JPH02297813A (en) * | 1989-02-28 | 1990-12-10 | Tosoh Corp | Sintered body of oxide, manufacture thereof, and target using same |
-
1990
- 1990-07-12 JP JP18512990A patent/JP3184977B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290551A (en) * | 1988-05-16 | 1989-11-22 | Tosoh Corp | Production of target for sputtering to be used for production of transparent electroconductive film |
| JPH0243356A (en) * | 1988-08-04 | 1990-02-13 | Tosoh Corp | Production of sputtering target for transparent conductive film |
| JPH02297812A (en) * | 1989-02-28 | 1990-12-10 | Tosoh Corp | Sintered body of oxide, manufacture thereof, and target using same |
| JPH02297813A (en) * | 1989-02-28 | 1990-12-10 | Tosoh Corp | Sintered body of oxide, manufacture thereof, and target using same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656216A (en) * | 1994-08-25 | 1997-08-12 | Sony Corporation | Method for making metal oxide sputtering targets (barrier powder envelope) |
| US6582641B1 (en) | 1994-08-25 | 2003-06-24 | Praxair S.T. Technology, Inc. | Apparatus and method for making metal oxide sputtering targets |
| US7799312B2 (en) | 2002-03-22 | 2010-09-21 | Samsung Corning Precision Glass Co., Ltd. | Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor |
| CN115893989A (en) * | 2022-12-29 | 2023-04-04 | 芜湖映日科技股份有限公司 | Process method for refining ITO target material micro grain structure and enhancing mechanical strength |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3184977B2 (en) | 2001-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3746094B2 (en) | Target and manufacturing method thereof | |
| KR940007607B1 (en) | Manufacturing method of ITO sputtering target | |
| US5160675A (en) | Sputtering target for producing electroconductive transparent films and process for manufacture thereof | |
| KR100205556B1 (en) | High Density Itio Sintered Itio Target and Manufacturing Method Thereof | |
| JP3777468B2 (en) | Sputtering target for cathode sputtering and method for producing the sputtering target | |
| KR100413958B1 (en) | Sputtering target and method for preparation thereof | |
| CN113416073B (en) | A kind of multi-phase composition tantalum/niobate composite ceramics and its preparation method | |
| JPH0754132A (en) | ITO sintered body and sputtering target | |
| CN116751048B (en) | Gallium-aluminum doped zinc oxide target material and preparation method and application thereof | |
| JPH0474860A (en) | Ito sputtering target material and its production | |
| CN117247274A (en) | A kind of Nb-doped tantalum-containing tin oxide target material and preparation method thereof | |
| JP4196805B2 (en) | Indium oxide target and method for manufacturing the same | |
| JP4724330B2 (en) | Tin-antimony oxide sintered compact target and method for producing the same | |
| JPH03126655A (en) | Indium oxide-tin oxide sintered body and method for producing the same | |
| JPH0243356A (en) | Production of sputtering target for transparent conductive film | |
| JP4120351B2 (en) | High concentration tin oxide ITO target and manufacturing method thereof | |
| JP4508079B2 (en) | Manufacturing method of sputtering target | |
| JP2000080469A (en) | ITO sputtering target material | |
| KR20220041778A (en) | Method for manufacturing deposition tablet, oxide transparent conductive film, and tin oxide-based sintered body | |
| US5700418A (en) | Method of manufacture of components made of sintered indium-tin-oxide solid-solution crystals | |
| JPH01290551A (en) | Production of target for sputtering to be used for production of transparent electroconductive film | |
| KR102272222B1 (en) | Manufacturing method of high purity ITO target | |
| TW201900911A (en) | Sputter target for transparent conductive film | |
| KR0177881B1 (en) | Manufacturing method of ITO sintered body | |
| JP2003002749A (en) | Method for producing indium oxide powder and ITO sputtering target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080511 Year of fee payment: 7 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080511 Year of fee payment: 7 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090511 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090511 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100511 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |