JPH0475355A - Joining method of semiconductor element to lead frame - Google Patents

Joining method of semiconductor element to lead frame

Info

Publication number
JPH0475355A
JPH0475355A JP2189807A JP18980790A JPH0475355A JP H0475355 A JPH0475355 A JP H0475355A JP 2189807 A JP2189807 A JP 2189807A JP 18980790 A JP18980790 A JP 18980790A JP H0475355 A JPH0475355 A JP H0475355A
Authority
JP
Japan
Prior art keywords
bonding agent
lead frame
semiconductor element
lead
drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2189807A
Other languages
Japanese (ja)
Other versions
JP2503738B2 (en
Inventor
Sadao Nagayama
長山　定夫
Takashi Suzumura
隆志 鈴村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP2189807A priority Critical patent/JP2503738B2/en
Publication of JPH0475355A publication Critical patent/JPH0475355A/en
Application granted granted Critical
Publication of JP2503738B2 publication Critical patent/JP2503738B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/011—Apparatus therefor
    • H10W72/0113—Apparatus for manufacturing die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent the generation of cracks in a semiconductor package without generating any warping on a lead film as in the case when an insulation film is used by directly dropping an insulation high temperature softening type bonding agent and connecting a semiconductor element with the lead film. CONSTITUTION:A heated and liquefied or semi-liquefied insulating high temperature softening type bonding agent 21 is adapted to drop on a region where a lead frame will be mounted from a specified elevation. The spots over which the bonding agent 21 is arranged to drop, must include such a location which can be insulated definitely and connected with a generation device to a satisfactory extent in a tab 27. As for other spots, the bonding agent is spot-dropped at the tip of an inner lead 19 as occasion demands. The spot drop method of the bonding agent 21 calls for a spot-drop device capable of dropping bonding agent over the regim where a lead frame will be mounted with accuracy, such as a dispenser type automatic spot-drop device.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 この発明はリードフレームに半導体素子を接合する方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method of bonding a semiconductor element to a lead frame.

〈従来の技術〉 近年、ＡＳ　Ｉ　Ｃ（Ａｐｐｌｉｃａｔｉｏｎ　　５ｐ
ｅｓｉｆｉｃＩＣ（＝用途特定ＩＣ）　）化への対応と
、ＩＣの大型化および高信頼性の両面からの要求とから
、シリコンチップの絶縁層としてポリイミドなどのフィ
ルムを貼り付けるリードフレームが実用化されている。<Conventional technology> In recent years, ASIC (Application 5P)
In response to the trend toward esificic ICs (application-specific ICs) and demands for larger ICs and higher reliability, lead frames to which films such as polyimide are attached as insulation layers for silicon chips have been put into practical use. There is.

　これらのフィルムは、テープ状でリードフレームに貼
り付けられ、さらにフィルムに予め塗布された接着剤に
より、あるいはその都度フィルムに接着剤を塗布してシ
リコンチップを貼付するものであり、ＬＯＣ（Ｌｅａｄ
　ｏｎ　Ｃｈｉｐ）、　ＣＯＬ　（Ｃｈｉｐ　ｏｎ　Ｌ
ｅａｄ）のタイプのそれぞれにおいて検討および実用化
されている。These films are attached to a lead frame in the form of a tape, and silicon chips are attached using an adhesive that has been applied to the film in advance or by applying adhesive to the film each time.
on Chip), COL (Chip on L)
Each type of technology (ead) has been studied and put into practical use.

これらテープ状フィルムにはポリエーテルアミドイミド
系などの高温熱可塑性の接着剤が使用されることがある
。　上記のようにして接着剤がフィルムに塗布された半
導体装置は、信頼性試験の、特にリフロー試験において
、テープ状フィルムに吸い込まれた水分が試験実施時に
急激に膨張し、パッケージクラックが発生する原因とな
ることが分かつている・ 〈発明が解決しようとする課題〉 従来の絶縁層としての、ポリエーテルアミドイミド系接
着剤を塗布したポリイミド系テープの場合には、全体と
しての面積が増大化するとともに、上述した絶縁フィル
ムが吸湿性および保湿性を有するため、製作された半導
体装置の絶縁層からの電流リークが発生することや、ま
た、信頼性試験、特にリフローテスト時に半導体装置に
パッケージクラックが生じやすい。A high temperature thermoplastic adhesive such as a polyether amide imide adhesive may be used for these tape-like films. For semiconductor devices with adhesive applied to the film as described above, during reliability tests, especially reflow tests, moisture sucked into the tape-like film expands rapidly during the test, causing package cracks. <Problem to be solved by the invention> In the case of a conventional insulating layer of polyimide tape coated with a polyetheramide-imide adhesive, the overall area increases. In addition, since the above-mentioned insulating film has hygroscopic and moisture retention properties, current leakage may occur from the insulating layer of manufactured semiconductor devices, and package cracks may occur in semiconductor devices during reliability tests, especially reflow tests. Easy to occur.

このため最近では、使用される絶縁フィルムの小面積化
および省略化が検討され始めている。For this reason, recently, studies have begun to reduce the area and omit the insulating film used.

接着剤付きの絶縁性フィルムにシリコンチップを貼り付
ける方法では、加熱して高温で貼付するため、高温貼付
時に導体パターンと絶縁性フィルムとの熱膨張差から、
絶縁性フィルムの反りの問題が生じる。　天みに、４２
Ｎｉ−Ｆｅ合金の熱膨張率は、４Ｘ１０−’／”Ｃ、ポ
リイミドフィルムの熱膨張率は、１７〜２０×１０−＠
／”Ｃである。In the method of pasting silicon chips on an insulating film with adhesive, the silicon chips are heated and pasted at high temperatures, so due to the difference in thermal expansion between the conductor pattern and the insulating film during high temperature pasting,
This causes the problem of warpage of the insulating film. Heavenly, 42
The thermal expansion coefficient of Ni-Fe alloy is 4X10-'/''C, and the thermal expansion coefficient of polyimide film is 17-20x10-@
/”It is C.

この発明の目的は、上記問題点を解消し、耐熱性のある
構成とし、かつ高信頼性を得る仕方でリードフレームに
半導体素子を接合する方法を提供するにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for bonding a semiconductor element to a lead frame in a manner that eliminates the above-mentioned problems, provides a heat-resistant structure, and provides high reliability.

〈課題を解決するための手段〉 上言己目的を達成するため、この発明によれば、リード
フレームに半導体素子を接合するにあたり、リードフレ
ームの半導体素子を搭載する予定の領域に、絶縁性高温
軟化型の接着剤を直接点滴下し、この点滴下された接着
剤の上に半導体素子を載せて接合することを特徴とする
リードフレームへの半導体素子の接合方法を提供する。<Means for Solving the Problems> In order to achieve the above object, according to the present invention, when bonding a semiconductor element to a lead frame, an insulating high temperature To provide a method for joining a semiconductor element to a lead frame, which is characterized in that a softening type adhesive is directly dripped, and a semiconductor element is placed on the dripped adhesive and joined.

この発明は、リードフレームに半導体素子を接合する場
合に、接着剤付きの絶縁性フィルムを使用することなく
、絶縁性高温軟化型の接着剤を直接に点滴下し、その上
に半導体素子を接合するものである。When bonding a semiconductor element to a lead frame, this invention enables the insulating high-temperature softening adhesive to be dripped directly onto the adhesive without using an insulating film with adhesive, and the semiconductor element is bonded on top of the insulating adhesive. It is something to do.

以下にこの発明の詳細な説明する。This invention will be explained in detail below.

この発明に用いられるリードフレームは、外枠と、リー
ド部と、半導体素子を載置するためのタブとを有する。The lead frame used in the present invention has an outer frame, a lead portion, and a tab on which a semiconductor element is placed.

　このタブはタブ吊リードを介して外枠に結合されてい
る。This tab is connected to the outer frame via a tab suspension lead.

リード部は樹脂封止時に封止材に封止されるインナーリ
ードと、封止材の外側に出るアウターリードとを有する
。The lead portion includes an inner lead that is sealed in a sealant during resin sealing, and an outer lead that extends outside the sealant.

半導体素子の搭載される予定領域としては、タブの他に
インナーリードの先端部を含めることができる。　この
ようにすると、インナーリードと半導体素子との間のグ
イボンディングが容易になるとともに、ボンディングワ
イヤの長さも短くすることができる。In addition to the tab, the area where the semiconductor element is to be mounted can include the tip of the inner lead. In this way, the bonding between the inner lead and the semiconductor element becomes easy, and the length of the bonding wire can also be shortened.

上述したリードフレームの搭載予定領域に熱されて溶液
状または半溶液状になった絶縁性の高温軟化型の接着剤
を所定距離から点滴下する。　接着剤を点滴下する箇所
は、タブにおいては、絶縁が確実にでき、半導体素子と
の接合を十分なものとする箇所に少なくとも必要である
。　その他の箇所として、必要に応じインナーリード先
端部に点滴下する。An insulating high-temperature softening adhesive that has been heated into a solution or semi-solution state is dripped from a predetermined distance onto the area where the lead frame is to be mounted. The adhesive is dripped onto the tab at least at a location where insulation can be ensured and bonding with the semiconductor element can be ensured. For other locations, drip infusion into the tip of the inner lead as needed.

接着剤の点滴下の方法としては、リードフレームの上記
予定領域（箇所）に正確に点滴下できる方法、例えばデ
イスペンサ一方式の自動滴下装置が挙げられる。Examples of the method for dripping the adhesive include a method that allows dripping accurately to the above-mentioned predetermined area (location) of the lead frame, such as a dispenser-type automatic dripping device.

滴下を行うために、例えばポリエーテルイミド、あるい
はポリエーテルアミドイミドなどの高温軟化型接着剤を
高温で溶融して行うものと、他の方法としては接着性樹
脂を溶媒で溶いていわゆるフェス状にして行う方法があ
る。In order to perform the dropping process, a high-temperature softening adhesive such as polyetherimide or polyetheramide-imide is melted at high temperature.Another method is to melt the adhesive resin with a solvent and form it into a so-called face shape. There is a way to do it.

また、実装時に、上記絶縁性接着剤に加えてグイボンデ
ィング剤を半導体素子の接合面側に塗布し、このグイボ
ンディング剤付きの半導体素子をリードフレームに接合
すると、点滴下された接着剤とグイボンディング剤との
つきが良くなり接合強度が比較的に大きくなり好ましい
。In addition, during mounting, in addition to the above-mentioned insulating adhesive, a Gui bonding agent is applied to the bonding surface side of the semiconductor element, and when the semiconductor element with this Gui bonding agent is bonded to a lead frame, the dripped adhesive and Gui bonding agent can be applied to the bonding surface side of the semiconductor element. It is preferable because it has good adhesion with the bonding agent and the bonding strength is relatively high.

次いで、半導体素子が接合されたリードフレームに、半
導体素子の電極端子と、インナーリードとをボンディン
グワイヤにより接続し、最後に封止材で樹脂封止し、外
枠をカットし、アウターリードを屈曲させて、半導体装
置を得る。　得られた半導体装置の断面形状を第１図に
示す。　図中、１１は樹脂封止型半導体装置を、１３は
樹脂封止材を、１５はボンディングワイヤを、１７はア
ウターリードを、１９はインナーリードを、２１は絶縁
性接着剤を、２３は半導体ベレットを、２５はグイボン
ディング剤を、２７はタブをそれぞれ示す。Next, the electrode terminals of the semiconductor element and the inner leads are connected to the lead frame to which the semiconductor element is bonded using bonding wires, and finally the resin is sealed with a sealing material, the outer frame is cut, and the outer leads are bent. Then, a semiconductor device is obtained. The cross-sectional shape of the obtained semiconductor device is shown in FIG. In the figure, 11 is a resin molded semiconductor device, 13 is a resin molding material, 15 is a bonding wire, 17 is an outer lead, 19 is an inner lead, 21 is an insulating adhesive, and 23 is a semiconductor 25 represents a pellet, 25 represents a glue bonding agent, and 27 represents a tab.

本発明に用いられるリードフレームの材料としては、Ｃ
ｕ、Ｃｕ合金およびＦｅ合金等の通常のリードフレーム
材として用いられるものであれば何でもよい。　例えば
４２％Ｎｉ−Ｆｅ合金は低熱膨張化がある程度なされて
いるので、本発明に用いられるリードフレーム材料とし
て有効である。The material of the lead frame used in the present invention is C
Any material used as a normal lead frame material may be used, such as U, Cu alloy, and Fe alloy. For example, a 42% Ni--Fe alloy has a certain degree of low thermal expansion and is therefore effective as a lead frame material used in the present invention.

〈実施例〉 以下にこの発明の詳細な説明する。<Example> This invention will be explained in detail below.

（実施例１） 厚さ２５０μｍの４２Ｎｉ−Ｆｅ合金製のリードフレー
ムに、主にポリエーテルアミドイミドよりなる接着剤約
１．５ｍｇを、接合部分にあたるインナーリード部にデ
イスペンサ一方式の自動滴下装置にて、それぞれ所定箇
所に点滴下して、リードフレームを作製した。(Example 1) Approximately 1.5 mg of adhesive mainly made of polyetheramide imide was applied to a lead frame made of 42Ni-Fe alloy with a thickness of 250 μm on the inner lead part corresponding to the joint part using a dispenser-type automatic dripping device. A lead frame was prepared by injecting the solution into each predetermined location.

このリードフレームに、接合される面にグイボンディン
グ剤が予め塗布された半導体素子をギヤングボンディン
グにより接合し、リードフレームに搭載された半導体素
子の電極端子とインナーリードの先端部とをワイヤボン
ディングにより接続し、樹脂モールドにてインナーリー
ドおよび半導体素子を封止して、半導体装置を作製した
。A semiconductor element whose surface to be bonded has been coated with a bonding agent in advance is bonded to this lead frame by Guy Young bonding, and the electrode terminal of the semiconductor element mounted on the lead frame and the tip of the inner lead are bonded by wire bonding. After connecting, the inner leads and the semiconductor element were sealed with a resin mold to produce a semiconductor device.

得られた半導体装置の製品に対し、プリント基板への実
装時の半田リフロー温度に相当する２１５℃に１．５分
間さらしたが、パッケージクラックが生じることがなか
った。The obtained semiconductor device product was exposed to 215° C. for 1.5 minutes, which corresponds to the solder reflow temperature during mounting on a printed circuit board, but no package cracks occurred.

〈発明の効果〉 以上の説明から明らかなように、絶縁性フィルムを省略
し、絶縁性高温軟化型の接着剤を直接滴下して半導体素
子をリードフレームに接合したことにより、絶縁性フィ
ルムを用いた場合のようにリードフレームに反りが発生
することはな（、実装時に半導体パッケージにクラック
が発生することがない。　したがって、この発明方法を
用いて得られた半導体パッケージの耐熱性が向上し、高
信頼性が得られる。　また絶縁性高温軟化型の接着剤が
自動的に所定位置に点滴下されることにより、製造工程
を簡略化できる。<Effects of the Invention> As is clear from the above explanation, by omitting the insulating film and directly dropping the insulating high temperature softening adhesive to bond the semiconductor element to the lead frame, it is possible to use the insulating film. The lead frame does not warp (and the semiconductor package does not crack during mounting) as would be the case if High reliability can be obtained.In addition, the manufacturing process can be simplified by automatically dripping the insulating high temperature softening adhesive into a predetermined position.

符号の説明 １１・・・樹脂封止型半導体装置、 １３・・・樹脂封止材、 １５・・・ボンディングワイヤ、 １７・・・アウターリード、 １９・・・インナーリード、 ２１・・・絶縁性接着剤、 ２３・・・半導体ベレット、 ２５・・・グイボンディング剤Explanation of symbols 11...resin-sealed semiconductor device, 13...Resin sealing material, 15... bonding wire, 17... Outer lead, 19... Inner lead, 21... Insulating adhesive, 23...Semiconductor pellet, 25... Gui bonding agent

Claims (1)

【特許請求の範囲】[Claims] （１）リードフレームに半導体素子を接合するにあたり
、リードフレームの半導体素子を搭載する予定の領域に
、絶縁性高温軟化型の接着剤を直接点滴下し、この点滴
下された接着剤の上に半導体素子を載せて接合すること
を特徴とするリードフレームへの半導体素子の接合方法
。(1) When bonding a semiconductor element to a lead frame, drop an insulating high-temperature softening adhesive directly onto the area of the lead frame where the semiconductor element is to be mounted, and place it on top of the dripped adhesive. A method for bonding a semiconductor element to a lead frame, the method comprising mounting and bonding the semiconductor element.
JP2189807A 1990-07-18 1990-07-18 Method of joining semiconductor element to lead frame Expired - Lifetime JP2503738B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2189807A JP2503738B2 (en) 1990-07-18 1990-07-18 Method of joining semiconductor element to lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2189807A JP2503738B2 (en) 1990-07-18 1990-07-18 Method of joining semiconductor element to lead frame

Publications (2)

Publication Number Publication Date
JPH0475355A true JPH0475355A (en) 1992-03-10
JP2503738B2 JP2503738B2 (en) 1996-06-05

Family

ID=16247538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2189807A Expired - Lifetime JP2503738B2 (en) 1990-07-18 1990-07-18 Method of joining semiconductor element to lead frame

Country Status (1)

Country Link
JP (1) JP2503738B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880522A (en) * 1996-07-24 1999-03-09 Hitachi Cable, Ltd. Stamped lead frame with adhesive layer for fixing to semiconductor device
US6040620A (en) * 1996-07-05 2000-03-21 Hitachi Cable, Ltd. Lead frame for LOC having a regulating lead to prevent variation in adhesive coverage
US6107675A (en) * 1996-06-12 2000-08-22 Hitachi Cable, Ltd. Lead frame
US6246106B1 (en) 1996-07-05 2001-06-12 Hitachi Cable, Ltd. Lead frame
US6268646B1 (en) 1996-08-27 2001-07-31 Hitachi Cable, Ltd. Lead frame for lead on chip
JP2007235021A (en) * 2006-03-03 2007-09-13 Mitsui Chemicals Inc Adhesive film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3163882B2 (en) 1994-01-19 2001-05-08 ミノルタ株式会社 Scanning device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107675A (en) * 1996-06-12 2000-08-22 Hitachi Cable, Ltd. Lead frame
US6040620A (en) * 1996-07-05 2000-03-21 Hitachi Cable, Ltd. Lead frame for LOC having a regulating lead to prevent variation in adhesive coverage
US6246106B1 (en) 1996-07-05 2001-06-12 Hitachi Cable, Ltd. Lead frame
US5880522A (en) * 1996-07-24 1999-03-09 Hitachi Cable, Ltd. Stamped lead frame with adhesive layer for fixing to semiconductor device
US6268646B1 (en) 1996-08-27 2001-07-31 Hitachi Cable, Ltd. Lead frame for lead on chip
JP2007235021A (en) * 2006-03-03 2007-09-13 Mitsui Chemicals Inc Adhesive film

Also Published As

Publication number Publication date
JP2503738B2 (en) 1996-06-05

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