JPH0475577B2 - - Google Patents

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Publication number
JPH0475577B2
JPH0475577B2 JP59009169A JP916984A JPH0475577B2 JP H0475577 B2 JPH0475577 B2 JP H0475577B2 JP 59009169 A JP59009169 A JP 59009169A JP 916984 A JP916984 A JP 916984A JP H0475577 B2 JPH0475577 B2 JP H0475577B2
Authority
JP
Japan
Prior art keywords
magnetic
magnetic recording
comparative example
recording medium
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59009169A
Other languages
Japanese (ja)
Other versions
JPS60154323A (en
Inventor
Koretada Tamagawa
Eisuke Myairi
Kazunori Ozawa
Norio Yokoyama
Hideaki Matsuyama
Kenji Yazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP59009169A priority Critical patent/JPS60154323A/en
Priority to NL8500085A priority patent/NL192409C/en
Priority to KR1019850000284A priority patent/KR920008414B1/en
Priority to DE3501561A priority patent/DE3501561C2/en
Priority to GB08501273A priority patent/GB2153851B/en
Priority to FR858500746A priority patent/FR2558631B1/en
Publication of JPS60154323A publication Critical patent/JPS60154323A/en
Publication of JPH0475577B2 publication Critical patent/JPH0475577B2/ja
Granted legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
    • G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
    • G11B5/706—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material
    • G11B5/70605—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the composition of the magnetic material metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C23C14/226—Oblique incidence of vaporised material on substrate in order to form films with columnar structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/85—Coating a support with a magnetic layer by vapour deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S100/00—Presses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Magnetic Record Carriers (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 本発明は、磁気記録媒体、特にノイズを低減せ
しめた薄膜型磁気記録媒体に関する。 背景技術とその問題点 近年、磁気記録の高密度化の目的で、磁性薄膜
型の磁気記録媒体即ち非磁性支持体上に、電気メ
ツキ,無電解メツキ,イオンプレーテイング,ス
パツタリング,真空蒸着等の方法により、数百Å
〜略1μの厚みの強磁性薄膜を形成させた磁気記
録媒体についての研究が盛んである。特に特公昭
41−19389号に開示された斜め蒸着法は、高い抗
磁力を有する磁気記録媒体が得られるので興味が
持たれ、種々の改良,改善がなされている。しか
し、この強磁性薄膜を磁気記録層とする磁気記録
媒体では、短波長域でのビデオ信号の出力が必ら
ずしも期待される程高くなく、ノイズレベルが高
いためS/N比としては充分満足されるものは得
られていない。 発明の目的 本発明は、上述の点に鑑み、ノイズレベルを低
減せしめ、S/N比を向上させた薄膜型磁気記録
媒体を提供せんとするものである。 発明の概要 本発明は、非磁性支持体上に酸素を含んだ真空
雰囲気中での斜め蒸着法により強磁性金属磁性材
料よりなる薄膜型磁気記録層を形成してなる磁気
記録媒体において、薄膜型磁気記録層を構成する
柱状結晶構造中に強磁性金属磁性材料の酸化物粒
子をランダムに配して成る磁気記録媒体である。 換言すると、この薄膜型磁気記録層は柱状結晶
構造の集合体から成り、各柱状結晶構造では強磁
性金属粒子と強磁性金属の酸化物粒子とがランダ
ムに配された構成となつている。 この発明の磁気記録媒体によれば、ノイズレベ
ルが低減し、S/N比が向上する。柱状結晶構造
中に蒸発物質である強磁性金属材料の酸化物粒子
をランダムに配することにより、ノイズレベルが
低減するのは、柱状結晶を構成する磁性蒸発粒子
のサイズが小さくなることに基因していると考え
られる。 実施例 以下、本発明の実施例を説明する。 第1図は本発明に適用される蒸着装置の概略図
である。この蒸着装置1は、所定量の酸素を含む
真空雰囲気に保たれた真空チヤンバー2内に金属
キヤン3が設けられ、これを繞つて非磁性支持体
4が供給リール5から巻取リール6に移送され、
金属キヤン3に対向する下方に適当な距離を置い
て金属磁性材料例えばCo,Fe,Niあるいはそれ
らの合金等の蒸着源7が配置され、この蒸着源7
から蒸発した金属磁性粒子がシヤツター8によつ
て非磁性支持体4上に所定の入射角をもつて斜め
蒸着されるように構成されている。 実施例 1 上記蒸着装置1を使用し、酸素ガス(O2)の
流量を100c.c./minとする1×10-4Torrの圧力下
で、10μ厚のポリエチレンテレフタレート
(PET)よりなる非磁性支持体4上にCo−Ni合
金(Coが80%,Niが20%)を順次斜め蒸着した。
蒸着時の入射角は40゜〜90゜,蒸着源7の加熱手段
は電子ビームである。このようにして作製された
蒸着テープを実施例1とした。このテープの特性
は以下の通りである。 Co−Ni蒸着膜厚 :1000Å 磁気特性 抗磁力(Hc) :820Oe 飽和磁束密度(Bm) :6800G 残留磁束密度(Br) :4900G 角型比(Br/Bm) :0.72 第2図はこの実施例1の蒸着テープの磁性層を
構成する柱状結晶の断面構造をモデル化して示し
たものである。測定は透過電子顕微鏡(TEM)
を用いて解析したものであり、図中10は柱状結
晶でその幅dは50〜100Å,11はCo−Ni粒子で
粒径50〜100Å,12はCo−Ni酸化物粒子で粒径
30〜70Åであつた。 比較例 1 酸素ガスを流さずに1×10-5Torrの圧力とし、
また入射角を70゜〜90゜とし、他は実施例1と同じ
条件で作製した蒸着テープを比較例1とした。こ
のテープの特性は以下の通りである。 Co−Ni蒸着膜厚 :1000Å 磁気特性 抗磁力(Hc) :800Oe 飽和磁束密度(Bm) :6900G 残留磁束密度(Br) :6280G 角型比(Br/Bm) :0.91 実施例 2 磁性材料をCo(100%)とした以外は実施例1
と同じ条件で作製した蒸着テープを実施例2とし
た。このテープの特性は以下の通りである。 Co蒸着膜厚 :1000Å 磁気特性 抗磁力(Hc) :910Oe 飽和磁束密度(Bm) :7300G 残留磁束密度(Br) :5300G 角型比(Br/Bm) :0.73 この実施例2の磁性層を構成する柱状結晶の断
面構造も、図示せざるも第2図と同様であつて、
Co粒子とCoO粒子がランダムに分布した構造で
あつた。また各粒径も同様であり、Co粒子の粒
径は50〜100Å,CoO粒子の粒径は30〜70Å,柱
状結晶の幅は50〜100Åであつた。 比較例 2 酸素ガスを流さずに1×10-5Torrの圧力とし、
また入射角を70゜〜90゜とした以外は実施例2と同
じ条件で作製した蒸着テープを比較例2とした。
このテープの特性は以下の通りである。 Co蒸着膜厚 :1000Å 磁気特性 抗磁力(Hc) :900Oe 飽和磁束密度(Bm) :7500G 残留磁束密度(Br) :6800G 角型比(Br/Bm) :0.91 上記各例のテープの電磁変換特性を比較した結
果を下記表に示す。この測定は、ギヤツプ長0.2μ
mのフエライトヘツドを用い、テープ相対速度を
3.8m/secとして出力及びノイズをスペクトルア
ナライザーで測定した。これは5MHzの信号で比
較したものであり、比較例1のテープの相対出力
及びS/Nを0dBとした。
INDUSTRIAL APPLICATION FIELD The present invention relates to a magnetic recording medium, and particularly to a thin film magnetic recording medium with reduced noise. BACKGROUND TECHNOLOGY AND PROBLEMS In recent years, for the purpose of increasing the density of magnetic recording, electroplating, electroless plating, ion plating, sputtering, vacuum deposition, etc. have been applied to magnetic thin film type magnetic recording media, that is, non-magnetic supports. Depending on the method, hundreds of Å
There is active research into magnetic recording media in which ferromagnetic thin films with a thickness of approximately 1 μm are formed. Especially Tokko Akira
The oblique evaporation method disclosed in No. 41-19389 is of interest because a magnetic recording medium having high coercive force can be obtained, and various improvements have been made thereto. However, in magnetic recording media that use this ferromagnetic thin film as the magnetic recording layer, the video signal output in the short wavelength range is not necessarily as high as expected, and the noise level is high, so the S/N ratio is low. I haven't been able to find anything that satisfies me. OBJECTS OF THE INVENTION In view of the above-mentioned points, the present invention aims to provide a thin-film magnetic recording medium that reduces the noise level and improves the S/N ratio. Summary of the Invention The present invention relates to a magnetic recording medium in which a thin-film magnetic recording layer made of a ferromagnetic metal magnetic material is formed on a non-magnetic support by an oblique evaporation method in a vacuum atmosphere containing oxygen. This is a magnetic recording medium in which oxide particles of a ferromagnetic metal magnetic material are randomly arranged in a columnar crystal structure constituting a magnetic recording layer. In other words, this thin film magnetic recording layer is composed of an aggregate of columnar crystal structures, and each columnar crystal structure has a structure in which ferromagnetic metal particles and ferromagnetic metal oxide particles are randomly arranged. According to the magnetic recording medium of the present invention, the noise level is reduced and the S/N ratio is improved. The noise level is reduced by randomly arranging oxide particles of ferromagnetic metal material, which is an evaporation substance, in a columnar crystal structure. This is because the size of the magnetic evaporation particles that make up the columnar crystals becomes smaller. It is thought that Examples Examples of the present invention will be described below. FIG. 1 is a schematic diagram of a vapor deposition apparatus applied to the present invention. This vapor deposition apparatus 1 is provided with a metal can 3 in a vacuum chamber 2 maintained in a vacuum atmosphere containing a predetermined amount of oxygen, and a non-magnetic support 4 is transferred from a supply reel 5 to a take-up reel 6 over the metal can 3. is,
A vapor deposition source 7 of a metal magnetic material such as Co, Fe, Ni, or an alloy thereof is arranged at an appropriate distance below facing the metal can 3.
The metal magnetic particles evaporated from the metal magnetic particles are obliquely deposited onto the non-magnetic support 4 at a predetermined angle of incidence by the shutter 8. Example 1 Using the vapor deposition apparatus 1 described above, a non-woven fabric made of polyethylene terephthalate (PET) with a thickness of 10 μm was deposited under a pressure of 1×10 −4 Torr with a flow rate of oxygen gas (O 2 ) of 100 c.c./min. A Co-Ni alloy (80% Co, 20% Ni) was sequentially and obliquely deposited on the magnetic support 4 .
The incident angle during vapor deposition is 40° to 90°, and the heating means for the vapor deposition source 7 is an electron beam. The vapor-deposited tape thus produced was referred to as Example 1. The characteristics of this tape are as follows. Co-Ni deposited film thickness: 1000Å Magnetic properties Coercive force (Hc): 820Oe Saturation magnetic flux density (Bm): 6800G Residual magnetic flux density (Br): 4900G Squareness ratio (Br/Bm): 0.72 Figure 2 shows this example. 1 is a model showing the cross-sectional structure of columnar crystals constituting the magnetic layer of vapor-deposited tape No. 1. Measurement is done using a transmission electron microscope (TEM)
In the figure, 10 is a columnar crystal whose width d is 50 to 100 Å, 11 is a Co-Ni particle with a particle size of 50 to 100 Å, and 12 is a Co-Ni oxide particle with a particle size of 50 to 100 Å.
It was 30 to 70 Å. Comparative example 1 The pressure was set to 1×10 -5 Torr without flowing oxygen gas,
Comparative Example 1 was a vapor-deposited tape produced under the same conditions as Example 1 except that the incident angle was 70° to 90°. The characteristics of this tape are as follows. Co-Ni deposited film thickness: 1000Å Magnetic properties Coercive force (Hc): 800Oe Saturation magnetic flux density (Bm): 6900G Residual magnetic flux density (Br): 6280G Squareness ratio (Br/Bm): 0.91 Example 2 Co Example 1 except that (100%)
Example 2 was a vapor-deposited tape produced under the same conditions as Example 2. The characteristics of this tape are as follows. Co deposited film thickness: 1000Å Magnetic properties Coercive force (Hc): 910Oe Saturation magnetic flux density (Bm): 7300G Residual magnetic flux density (Br): 5300G Squareness ratio (Br/Bm): 0.73 Constitutes the magnetic layer of Example 2 The cross-sectional structure of the columnar crystal is also the same as that in Fig. 2, although it is not shown.
It had a structure in which Co particles and CoO particles were randomly distributed. The particle sizes of each particle were also similar; the particle size of Co particles was 50 to 100 Å, the particle size of CoO particles was 30 to 70 Å, and the width of columnar crystals was 50 to 100 Å. Comparative example 2 The pressure was set to 1×10 -5 Torr without flowing oxygen gas,
Comparative Example 2 was a vapor-deposited tape produced under the same conditions as Example 2 except that the incident angle was 70° to 90°.
The characteristics of this tape are as follows. Co deposited film thickness: 1000Å Magnetic properties Coercive force (Hc): 900Oe Saturation magnetic flux density (Bm): 7500G Residual magnetic flux density (Br): 6800G Squareness ratio (Br/Bm): 0.91 Electromagnetic characteristics of the tapes in each example above The results of the comparison are shown in the table below. This measurement is based on a gap length of 0.2μ.
Using a ferrite head of m, the tape relative speed is
The output and noise were measured using a spectrum analyzer at 3.8 m/sec. This is a comparison using a 5 MHz signal, and the relative output and S/N of the tape of Comparative Example 1 were set to 0 dB.

【表】 先ず共にCo−Ni磁性層である実施例1と比較
例1との比較について述べる。抗磁力Hcは互い
にほぼ等しく、残留磁束密度Br及び角型比Br/
Bmは共に比較例1が優つている。また前記表か
ら、実施例1のテープは出力では比較例1より低
く、S/Nでは比較例1より優つており、ノイズ
が低減しているのが判る。 そして、電子顕微鏡観察によれば、実施例1で
は第2図に示すように柱状結晶中にCo−Ni及び
Co−Ni酸化物の微結晶がランダムに分布してい
ることが判明した。他方、比較例1では柱状結晶
がCo−Niの微結晶で形成されている。実施例1
では柱状結晶を形成するCo−Ni微結晶が、生成
されたCo−Ni酸化物により細分化されて、微粒
子化される。これに対して比較例1ではCo−Ni
微結晶がCo−Ni酸化物により細分化されること
がない。従つて、実施例1ではCo−Ni磁性微結
晶の粒子サイズが比較例1のそれより小さくなる
ために電磁変換特性においてノイズが低減され
る。 次に、共にCo磁性層である実施例2と比較例
2の比較においても同様である。即ち抗磁力Hc
は互いにほぼ等しく、残留磁束密度Br及び角型
比Br/Bmは共に比較例2が優つている。そし
て、前記表から明らかなように実施例2は、出力
では比較例2より低く、S/Nでは比較例2より
優つており、ノイズが低くなつている。 一方、顕微鏡観察によれば、実施例2では柱状
結晶中にCo及びCo酸化物の微結晶がランダムに
分布している。これに対し比較例2では柱状結晶
がCoの微結晶で形成されている。そして実施例
2では柱状結晶を形成するCo微結晶が、生成さ
れたC酸化物により細分化され微粒子化されるの
に対し、比較例2ではCo微結晶はCo酸化物によ
り細分化されることはない。従つて、この実施例
2の場合もCo磁性微結晶の粒子サイズが比較例
2のそれより小さくなり、電磁変換特性において
ノイズが低減される。 尚、強磁性金属磁性材料としてはCo,Ni,Fe
あるいはそれらの合金を用いることができる。 発明の効果 本発明によれば、薄膜型磁気記録層を構成する
柱状結晶構造中にその強磁性金属磁性材料の酸化
物粒子をランダムに配したことにより、柱状結晶
を構成する強磁性金属微結晶が細分化される。従
つて電磁変換特性においてノイズレベルが低く、
S/N比が高い薄膜型磁気記録媒体が得られる。
[Table] First, a comparison will be made between Example 1 and Comparative Example 1, both of which are Co--Ni magnetic layers. The coercive forces Hc are almost equal to each other, and the residual magnetic flux density Br and squareness ratio Br/
Comparative Example 1 is superior in both Bm. Further, from the above table, it can be seen that the tape of Example 1 has a lower output than Comparative Example 1, and a superior S/N than Comparative Example 1, indicating that noise is reduced. According to electron microscope observation, in Example 1, Co-Ni and Co-Ni were present in the columnar crystals as shown in FIG.
It was found that the Co-Ni oxide microcrystals were randomly distributed. On the other hand, in Comparative Example 1, the columnar crystals are formed of Co--Ni microcrystals. Example 1
In this case, Co--Ni microcrystals forming columnar crystals are subdivided into fine particles by the generated Co--Ni oxide. On the other hand, in Comparative Example 1, Co-Ni
Microcrystals are not fragmented by Co-Ni oxide. Therefore, in Example 1, the particle size of the Co--Ni magnetic microcrystals is smaller than that in Comparative Example 1, so that noise is reduced in the electromagnetic conversion characteristics. Next, the same applies to the comparison between Example 2 and Comparative Example 2, both of which are Co magnetic layers. That is, the coercive force Hc
are almost equal to each other, and Comparative Example 2 is superior in both the residual magnetic flux density Br and the squareness ratio Br/Bm. As is clear from the above table, the output of Example 2 is lower than that of Comparative Example 2, the S/N is superior to Comparative Example 2, and the noise is lower. On the other hand, according to microscopic observation, in Example 2, Co and Co oxide microcrystals were randomly distributed in the columnar crystals. On the other hand, in Comparative Example 2, the columnar crystals are formed of Co microcrystals. In Example 2, the Co microcrystals forming columnar crystals are subdivided into fine particles by the generated C oxide, whereas in Comparative Example 2, the Co microcrystals are subdivided by the Co oxide. There isn't. Therefore, the particle size of the Co magnetic microcrystals in Example 2 is also smaller than that in Comparative Example 2, and noise is reduced in the electromagnetic conversion characteristics. In addition, Co, Ni, Fe are used as ferromagnetic metal magnetic materials.
Alternatively, alloys thereof can be used. Effects of the Invention According to the present invention, the ferromagnetic metal microcrystals forming the columnar crystals are randomly arranged in the columnar crystal structure forming the thin-film magnetic recording layer. is subdivided. Therefore, the noise level is low in electromagnetic conversion characteristics,
A thin film magnetic recording medium with a high S/N ratio can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に適用される蒸着装置、第2図
は本発明で得られた磁性層を構成する柱状結晶の
断面構造をモデル化した図である。 4は非磁性支持体、10は柱状結晶、11は
Co−Ni粒子、12はCo−Ni酸化物粒子である。
FIG. 1 is a vapor deposition apparatus applied to the present invention, and FIG. 2 is a diagram modeling the cross-sectional structure of columnar crystals constituting the magnetic layer obtained by the present invention. 4 is a non-magnetic support, 10 is a columnar crystal, 11 is a
Co-Ni particles 12 are Co-Ni oxide particles.

Claims (1)

【特許請求の範囲】[Claims] 1 非磁性支持体上に、酸素を含んだ真空雰囲気
中での斜め蒸着法により、強磁性金属磁性材料よ
りなる薄膜型磁気記録層を形成してなる磁気記録
媒体において、上記薄膜型磁気記録層を構成する
柱状結晶構造中に上記強磁性金属磁性材料の酸化
物粒子をランダムに配したことを特徴とする磁気
記録媒体。
1. A magnetic recording medium in which a thin-film magnetic recording layer made of a ferromagnetic metal magnetic material is formed on a non-magnetic support by an oblique evaporation method in a vacuum atmosphere containing oxygen, wherein the thin-film magnetic recording layer is A magnetic recording medium characterized in that oxide particles of the ferromagnetic metal magnetic material are randomly arranged in a columnar crystal structure constituting the magnetic recording medium.
JP59009169A 1984-01-20 1984-01-20 Magnetic recording medium Granted JPS60154323A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59009169A JPS60154323A (en) 1984-01-20 1984-01-20 Magnetic recording medium
NL8500085A NL192409C (en) 1984-01-20 1985-01-15 Magnetic record carrier with a thin film of ferromagnetic metal on a non-magnetic substrate.
KR1019850000284A KR920008414B1 (en) 1984-01-20 1985-01-18 Magnetic medium
DE3501561A DE3501561C2 (en) 1984-01-20 1985-01-18 Magnetic recording medium
GB08501273A GB2153851B (en) 1984-01-20 1985-01-18 Ferro-magnetic layer of magnetic recording media
FR858500746A FR2558631B1 (en) 1984-01-20 1985-01-18 MAGNETIC RECORDING MEDIUM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59009169A JPS60154323A (en) 1984-01-20 1984-01-20 Magnetic recording medium

Publications (2)

Publication Number Publication Date
JPS60154323A JPS60154323A (en) 1985-08-14
JPH0475577B2 true JPH0475577B2 (en) 1992-12-01

Family

ID=11713089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59009169A Granted JPS60154323A (en) 1984-01-20 1984-01-20 Magnetic recording medium

Country Status (6)

Country Link
JP (1) JPS60154323A (en)
KR (1) KR920008414B1 (en)
DE (1) DE3501561C2 (en)
FR (1) FR2558631B1 (en)
GB (1) GB2153851B (en)
NL (1) NL192409C (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1235808A (en) * 1984-03-22 1988-04-26 Tetsuo Oka Vertical magnetic recording medium and process for preparation thereof
JPS63237210A (en) * 1987-03-25 1988-10-03 Sony Corp Magnetic recording medium
JP2639065B2 (en) * 1989-03-10 1997-08-06 松下電器産業株式会社 Manufacturing method of magnetic recording media
FR2713360B1 (en) * 1993-12-01 1996-03-08 Aerospatiale Centralized control system for an industrial installation.
US7241519B2 (en) 2003-07-07 2007-07-10 Sony Corporation Magnetic recording medium with columar magnetic layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1599161A (en) * 1976-07-15 1981-09-30 Matsushita Electric Industrial Co Ltd Magnetic recording medium and method of making the same
JPS5629A (en) * 1979-06-15 1981-01-06 Ulvac Corp Vacuum-evaporated film type magnetic recording substance and its manufacture
JPS6033289B2 (en) * 1979-07-18 1985-08-02 松下電器産業株式会社 Metal thin film magnetic recording media
JPS573223A (en) * 1980-06-03 1982-01-08 Tdk Corp Magnetic recording medium
JPS5798133A (en) * 1980-12-05 1982-06-18 Matsushita Electric Ind Co Ltd Magnetic recording medium
JPS57152516A (en) * 1981-03-16 1982-09-20 Hitachi Maxell Ltd Magnetic recording medium
JPS57152520A (en) * 1981-03-17 1982-09-20 Matsushita Electric Ind Co Ltd Magnetic recording medium
JPS5814324A (en) * 1981-07-17 1983-01-27 Fuji Photo Film Co Ltd Magnetic recording medium
JPS5841443A (en) * 1981-09-04 1983-03-10 Fuji Photo Film Co Ltd Manufacture of magnetic recording medium
JPS5883327A (en) * 1981-11-12 1983-05-19 Fuji Photo Film Co Ltd Magnetic recording medium
JPS5883328A (en) * 1981-11-12 1983-05-19 Fuji Photo Film Co Ltd Magnetic recording medium
JPS5968815A (en) * 1982-10-12 1984-04-18 Sony Corp Magnetic recording medium
US4537832A (en) * 1982-12-25 1985-08-27 Tdk Corporation Magnetic recording medium

Also Published As

Publication number Publication date
DE3501561C2 (en) 1995-08-31
KR850005665A (en) 1985-08-28
NL192409C (en) 1997-07-04
FR2558631A1 (en) 1985-07-26
FR2558631B1 (en) 1992-09-18
JPS60154323A (en) 1985-08-14
KR920008414B1 (en) 1992-09-28
DE3501561A1 (en) 1985-08-14
NL8500085A (en) 1985-08-16
GB8501273D0 (en) 1985-02-20
GB2153851A (en) 1985-08-29
NL192409B (en) 1997-03-03
GB2153851B (en) 1987-06-03

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