JPH0476473B2 - - Google Patents

Description

[Detailed description of the invention]

[Technical field to which the invention pertains] The present invention uses light (light in a broad sense here, including ultraviolet rays,
(visible light, infrared rays, X-rays, gamma rays, etc.)
The present invention relates to a photoreceptor member sensitive to magnetic waves. moreover
For details, use coherent light such as laser light.
The present invention relates to a light-receiving member suitable for. [Description of prior art] How to record digital image information as an image and
The laser is modulated according to the digital image information.
– By optically scanning the light-receiving member with light
forming an electrostatic latent image and then developing the latent image;
Furthermore, perform processing such as transfer and fixing as necessary.
There are known methods for recording images, among them
In the electrophotographic image forming method, laser
Therefore, small and inexpensive He-Ne laser or semiconductor
Body laser (usually has an emission wavelength of 650 to 820 nm)
It is common to record images using
Ru. By the way, it is not suitable for using semiconductor lasers.
As a light-receiving member for electrophotography, its photosensitivity
Area consistency is superior compared to other types of photoreceptive materials.
In addition to its high Bitkers hardness,
It is evaluated based on the fact that there are few problems of harm, for example,
In 1982-86341 and Japanese Patent Application 56-83746
Amorphous materials containing silicon atoms, such as those seen in
(hereinafter abbreviated as "a-Si")
The material is attracting attention. However, the light receiving member
If the receptor layer is a single-layer a-Si layer, its high light
Required for electrophotography while maintaining sensitivity
Ten¹²To ensure dark resistance of Ωcm or more, hydrogen atoms
or halogen atoms, or in addition to these, boron atoms
structure in a controlled manner in layers with a specific amount range of
Therefore, it is necessary to contain the
Therefore, it is necessary to strictly control various conditions.
Tolerances for the design of light-receiving members as required
There are considerable limitations. And such design
Even if the dark resistance is low to some extent, the problem of tolerance can be solved.
Improvements have been made by making it possible to effectively utilize the high light sensitivity of
Suggestions for improvement have been made. That is, for example,
Publication No. 54-121743, Japanese Unexamined Patent Publication No. 57-4053, Special
As seen in 1982-4172, the photoreceptive layer
Layered structure with two or more layers with different conductive properties
As a result, a depletion layer is formed inside the photoreceptor layer, or
JP-A No. 57-52178, No. 52179, No. 52180,
Only in the publications No. 58159, No. 58160, and No. 58161.
between the support and the photoreceptive layer, or/and
A multilayer structure with a barrier layer on the upper surface of the photoreceptive layer.
The photoreceptor area has increased apparent dark resistance by
material has been proposed. However, such a photoreceptive layer has a multilayer structure.
Light-receiving members have variations in the thickness of each layer.
When performing laser recording using
is coherent monochromatic light, so the laser in the photoreceptive layer
Free surface on the laser light irradiation side, each layer constituting the light-receiving layer
and the layer interface between the support and the photoreceptive layer (hereinafter, this self-
"Interface" in the sense of combining both surface and layer interface
It is called. ) Each of the reflected light that is reflected from
This often leads to conflicts. This interference phenomenon occurs in the visible image formed.
So-called interference fringes appear and cause image defects.
It causes. Especially for mid-tone images with high gradation.
In the case of forming a
This will give you a clear image. Another important point is the semiconductor laser used.
As the wavelength range of light becomes longer, the photoreceptive layer
The absorption of the laser light will decrease, so the
There is a problem in that the interference phenomenon described above becomes noticeable. i.e., e.g. two or more layers (multilayer)
In the case of composition, each of those layers
Interference effects occur, and each interference is synergistic.
This is where the interference fringes appear.
This directly affects the transfer member, causing
The interference fringes corresponding to the interference fringe pattern are transferred and fixed on the
and appear in the visible image, resulting in a defective image.
There is a problem that I encountered. As a measure to solve these problems, (a) support surface
Diamond cutting the surface to ±500Å to ±10000Å
A method of forming a light scattering surface by providing unevenness (for example,
(Refer to Japanese Patent Application Laid-Open No. 162975/1983), (b) Aluminum
The surface of the support is treated with black alumite, or
disperses carbon, color pigments, and dyes in resin.
A method of providing a light absorption layer by
-Refer to Publication No. 165845), (c) Aluminum support surface
The surface is treated with satin-like alumite, or sandblasted.
Support is created by creating fine grain-like unevenness by
A method of providing a light scattering and anti-reflection layer on the surface of the support (for example,
(see Japanese Unexamined Patent Publication No. 16554/1983), etc. have been proposed.
There is. Although these proposed methods may produce some results,
Nono completely eliminates the interference fringe pattern that appears on images.
It's not good enough. In other words, in method (a), a specific
It has a large number of uneven surfaces, which creates a light scattering effect.
The appearance of interference fringes due to
However, the light scattering is still specular reflection.
Because the light component remains, interference fringes due to the specularly reflected light
In addition to the pattern remaining, the surface of the support
The light scattering effect causes the irradiation spot to spread.
However, this results in a substantial decrease in resolution. For method (b), black alumite treatment is used.
complete absorption is not possible and reaction on the surface of the support
The emitted light remains. In addition, colored pigment dispersion resin
If a layer is provided, when forming the a-Si layer, the resin
The photoreceptive layer is formed when a degassing phenomenon occurs from the layer.
The quality will deteriorate significantly, and the resin layer is a-Si layer type.
The book was damaged by the plasma generated during its creation.
In addition to reducing the absorption function of the
This adversely affects the subsequent formation of the a-Si layer due to
There are problems such as: Regarding method (c), for example, consider the incident light.
If so, a part of it is reflected on the surface of the photoreceptive layer and
The remaining light enters the light-receiving layer and becomes transparent.
There will be too much light. At the surface of the support, the transmitted light
Some of it is scattered and becomes diffused light, and the rest is
It is specularly reflected and becomes reflected light, and a part of it becomes emitted light.
The emitted light is mixed with the reflected light.
It is an interfering component and will remain in any case.
However, the interference fringe pattern does not completely disappear. By the way, regarding preventing interference in this case,
to prevent multiple reflections from occurring inside the photoreceptive layer.
There are also attempts to increase the diffusivity of the surface of the support.
However, in such a case, the light is instead absorbed within the photoreceptive layer.
diffuses and causes halation, which is eventually solved.
Image resolution will decrease. In particular, in light-receiving members with a multilayer structure, support
Even if the body surface is irregularly roughened, the reaction on the first layer surface will not occur.
Emitted light, reflected light on the second layer, specularly reflected light on the support surface
interfere with each other, and the thickness of each layer of the light-receiving member is changed.
A pattern of interference fringes occurs. Therefore, multi-layered light
In the receiving member, the surface of the support is irregularly roughened.
Therefore, it is impossible to completely prevent interference fringes.
It is. In addition, the surface of the support may be coated by a method such as sandblasting.
When roughening a surface irregularly, the roughness will vary between lots.
There is a lot of variation in
However, the surface roughness is uneven, causing problems in manufacturing control.
be. In addition, relatively large protrusions are randomly shaped.
These large protrusions are photoreceptors.
This results in local breakdown of the layer. In addition, the surface of the support is simply roughened regularly.
Usually, light is applied along the uneven shape of the surface of the support.
Because the receptive layer is deposited on the uneven slope of the support,
The slopes of the unevenness of the photoreceptive layer become parallel, and that part
In minutes, the incident light causes bright areas and dark areas.
Also, the thickness of the photoreceptive layer as a whole is
Due to the non-uniformity, light and dark stripes appear. subordinate
Therefore, simply roughening the surface of the support regularly will not
It is not possible to completely prevent the occurrence of striped patterns. In addition, a multilayer structure is formed on a support whose surface is regularly roughened.
Even when a photoreceptive layer of
Interference between specularly reflected light and reflected light on the surface of the photoreceptor layer
In addition, interference from reflected light at the interface between each layer is added.
interference fringes in a single-layer light-receiving member.
The current situation makes it even more complicated. [Purpose of the invention] The present invention provides a photoreceptor mainly composed of a-Si.
Regarding light-receiving members having layers, the above-mentioned problems can be solved.
The purpose is to eliminate them and make them meet various requirements.
That is. That is, the main purpose of the present invention is to
The chemical and photoconductive properties mostly depend on the usage environment.
Stable virtually all the time without any light fatigue
Excellent, no deterioration even after repeated use
Excellent durability and moisture resistance, with no or almost no residual potential
a-Si, which is not observed and manufacturing control is easy
Provides a light-receiving member having a light-receiving layer composed of
It's about doing. Another object of the present invention is to provide photosensitivity in the entire visible light range.
High degree of accuracy, especially matching with semiconductor lasers
Composed of a-Si, which has excellent properties and fast photoresponse.
To provide a light-receiving member having a light-receiving layer
be. Still another object of the present invention is to provide high photosensitivity, high SN
Made of a-Si with specific characteristics and high electrical voltage resistance.
Provided is a light-receiving member having a light-receiving layer made of
There is a particular thing. Another object of the invention is the layer provided on the support.
and the support and between each laminated layer.
Excellent adhesion, dense and stable structure
A photoreceptive layer composed of a-Si with high layer quality
An object of the present invention is to provide a light-receiving member having the following features. Still another object of the present invention is to use coherent monochromatic light.
Suitable for image formation, suitable for long-term repeated use.
However, interference fringes and spots do not appear during reverse development.
There are no image defects or blurred images, and the density is very low.
is high, halftones appear clearly, and resolution is high.
With a-Si, you can obtain high-quality images.
Provided is a light-receiving member having a light-receiving layer configured.
There are many things. [Structure of the invention] The present inventors have previously described the conventional light-receiving member.
In order to overcome the above problems and achieve the above objectives,
As a result of intensive research, we have obtained the following knowledge.
Based on these findings, we have completed the present invention. That is, the present invention provides silicon atoms and
At least one of germanium atoms or tin atoms
A first layer composed of an amorphous material containing
and silicon atoms, oxygen atoms, carbon atoms and nitrogen atoms.
Contains at least one type selected from elementary atoms
and a second layer composed of an amorphous material.
A light-receiving member, wherein the first layer is made of germanium.
Containing at least one of um atoms and tin atoms
layer containing germanium atoms and tin atoms.
A multi-layered layer having, in order from the support side, a layer containing no
The surface of the support has a plurality of spherical traces.
It has an uneven shape due to depressions, and the spherical trace depressions
It may have multiple microscopic irregularities within the groove.
The present invention relates to a light-receiving member having the following features. By the way, as a result of intensive research by the inventors,
The findings obtained are summarized, with multiple layers on the support
In the light-receiving member, a plurality of
Providing unevenness with spherical trace depressions, and the spherical trace
Create multiple microscopic irregularities within the dent.
This reduces interference fringe patterns that appear during image formation.
The problem will be significantly resolved. This knowledge was confirmed by various experiments conducted by the inventors.
It is based on the facts obtained from. Here is a diagram to make it easier to understand.
This will be explained below using FIG. 1 shows the layers of a light receiving member 100 according to the present invention.
This is a schematic diagram showing the structure, showing multiple minute spherical traces.
It has an uneven shape due to depressions, and the spherical trace depressions
A support that has multiple microscopic irregularities within the groove.
On the body 101, along the uneven slope surface, the first
layer 102 and a second layer 103.
3 shows a photoreceptive member with layers. 2 and 4 show the light receiving member of the present invention.
Explain how the problem of interference fringes is solved by
This is a diagram for understanding. Figure 3 shows a support with a regularly roughened surface.
Conventional photoreceptor with multilayered photoreceptor layers deposited
It is an enlarged view of a part of the material. The smell of the figure
301 is the first layer, 302 is the second layer, 30
3 is the free surface, 304 is the boundary between the first layer and the second layer.
Each side is shown. As shown in Figure 3,
The surface of the support is simply made regular by cutting or other means.
If the surface of the support is only roughened, it is usually caused by a concave surface.
Since the light-receiving layer is formed along the convex shape, it provides support.
Inclined surface of the body surface and uneven surface of the photoreceptive layer
This is where they form a parallel relationship. This causes, for example, the photoreceptor layer to
Consisting of two layers, a layer 301 and a second layer 302.
In a light receiving member having a multilayer structure,
For example, the following problems are regularly encountered. Immediately
The interface 304 between the first layer and the second layer and the free
Since the surface 303 is in a parallel relationship, the interface 304
Reflected light R at₁and the reflected light R on the free surface₂is the direction
coincide, and interference fringes are generated depending on the thickness of the second layer.
Ru. Figure 2 shows the uneven shape due to multiple spherical trace depressions.
A multilayer photoreceptive layer is deposited on a support with
FIG.
Ru. In the figure, 201 is the first layer, 202 is the first layer, and 202 is the first layer.
second layer, 203 is the free surface, 204 is the first layer
and the interface with the second layer, respectively. Second
As shown in the figure, there are multiple microscopic spheres on the surface of the support.
When providing an uneven shape with trace depressions, the support
The light-receiving layer provided on top is formed along the uneven shape.
For depositing a first layer 201 and a second layer 202
The interface 204 with and the free surface 203 are each
Spherical trace depressions are formed along the uneven shape of the support surface.
It is formed into an uneven shape by scratching. shape on the interface 204
The curvature of the formed spherical trace depression is R₁, on the free surface
The curvature of the formed spherical trace depression is R₂Then,
R₁and R₂What is R?₁≠R₂Therefore, at the interface 204
The reflected light and the reflected light at the free surface 203 are each
with different reflection angles, i.e. in FIG.
θ₁,θ₂is θ₁≠θ₂However, the direction is different, and the
l shown in Figure 2₁,l₂, l₃using l₁+l₂−l₃expressed in
The wavelength shift where the signal is transmitted is not constant, but changes.
Therefore, it corresponds to the so-called Newton ring phenomenon.
Shearing interference occurs, and the interference fringes are inside the depression.
This is where it will be dispersed. This allows
The image that appears through the photoreceptor is microscopic.
In other words, even if interference fringes were to appear,
These are invisible to the naked eye.
Ru. That is, the use of a support having such a surface shape.
is formed by forming a multilayered photoreceptive layer thereon.
In a light-receiving member, light passing through the light-receiving layer
is reflected at the layer interface and the support surface, causing them to dry.
The resulting image may appear striped.
To efficiently prevent
This leads to obtaining a light-receiving member. FIG. 4 shows the light receiving member of the present invention shown in FIG.
FIG. 3 is an enlarged view of a part of the support surface in FIG. No.
As shown in Figure 4, in the light receiving member of the present invention
The support surface is one of the surfaces within the spherical trace depression 401.
Further minute unevenness or unevenness group 40 on the part or the whole
2 is formed. Even more minute irregularities like this
When the unevenness group 402 is provided, it is written using FIG.
In addition to the interference prevention effect mentioned above,
The convexity 402 provides a scattering effect, which
The occurrence of interference fringes is more reliably prevented.
Ru. By the way, in the conventional technology, as mentioned above,
Diffuse reflection can be achieved by randomly roughening the surface of the support.
This prevents the occurrence of interference fringes. deer
In such cases, sufficient interference fringes can be prevented from occurring.
Not only will it not be possible to obtain the desired effect, but also the
For example, when cleaning
Problems also arise when cleaning the product. Immediately
In other words, the surface of the light-receiving layer is formed by recesses provided on the support.
Due to the unevenness along the convexity, the blade is difficult to receive light.
Mainly applies to the convex and convex parts of the layer, cleaning
In addition, the convex parts of the photoreceptive layer and the blade surface
As a result, the durability of both will increase.
There are many problems. On the other hand, in the light receiving member of the present invention,
The minute unevenness that causes scattering effects creates spherical traces.
Because it exists in the depression (concave part), it is difficult to clean it when cleaning.
, the blade contacts the recess in the photoreceptive layer.
This eliminates the problem that the blade and photoreceptive layer surface
It also has the advantage of not placing a large load on the
Ru. Now, it is provided on the surface of the support of the light receiving member of the present invention.
The curvature, width, and
And the height of the finer unevenness inside the spherical trace depression is:
The generation of interference fringes in the light receiving member of the present invention
It is important to efficiently obtain the effect of preventing
It is essential. As a result of various experiments, the inventors
We investigated the following points. In other words, the curvature of the uneven shape due to the spherical trace depression is
When R and width are D, the following formula: D/R≧0.035 If it satisfies the
0.5 or more Newton rings due to ring interference
It will exist. Furthermore, the following formula: D/R≧0.055 If it satisfies the
There is one or more Newton rings due to ring interference.
There will be. For these reasons, it is possible that
The interference fringes are dispersed within each trace depression, and the light
To prevent interference fringes from occurring on the receiving member
The above D/R is 0.035, preferably 0.055 or more. It is desirable that Further, the upper limit of D/R is preferably 0.5. This is because when D/R is larger than 0.5, the depression Width D becomes relatively large, leading to image unevenness, etc.
This is because the situation becomes easier. In addition, the width D of the unevenness due to the trace depression is large.
It is also about 500 μm, preferably 200 μm or less, more preferably
More preferably, the thickness is 100 μm or less. D is
If it exceeds 500μm, image unevenness is likely to occur.
At the same time, there is a risk that the resolution will be exceeded.
In such cases, effective interference fringe prevention effects can be used.
becomes difficult to obtain. The height of the minute irregularities formed within the spherical trace depression,
That is, the surface roughness γmax within the spherical trace depression is 0.5 to
Preferably, it is in the range of 20 μm. γmam
If the diameter is 0.5 μm or less, sufficient scattering effect cannot be obtained.
Moreover, if the thickness exceeds 20μm, it will become a spherical trace depression.
Compared to the unevenness caused by
becomes too large and the dents no longer have a spherical shape.
It has the effect of preventing interference fringes from occurring.
You won't get enough. Also, on such supports
Increasing the non-uniformity of the photoreceptive layer provided on the
This is preferable because it tends to cause image defects.
It's not right. The present invention is based on the above-identified facts.
The light receiving member provided by the present invention is as follows.
The main structure is as follows. That is, silicon atoms and germanium are placed on the support.
containing at least one of a umium atom or a tin atom.
a first layer composed of an amorphous material having
Con atoms, oxygen atoms, carbon atoms and nitrogen atoms
Amorphous containing at least one selected from among
a photoreceptive layer having a second layer composed of a material;
the first layer comprising a gel
Contains at least one of manium atoms or tin atoms
layer A with germanium atoms and tin atoms.
Layers that do not contain any of the
The support has a multi-layer structure, and the surface of the support has depressions.
The radius of curvature R and the width D of the depression are 500 μm or less.
Multiple spherical trace depressions with 0.35≦D/R
It has an unevenness according to
Characterized by the formation of minute irregularities of 0.5 to 20 μm
This is a light-receiving member. Support in the light-receiving member of the present invention having the above structure
The unevenness caused by the plurality of spherical trace depressions on the surface of
Even if they have the same radius of curvature, or almost the same radius of curvature,
Formed by a depression with the same radius of curvature and width
It may be. Light reception in the light receiving member of the present invention having the above configuration
The layer consists of atoms belonging to a group or groups of the periodic table.
May contain. In this case, the light-receiving layer contains
Regarding atoms belonging to a group or groups of the periodic law,
The distribution concentration of these atoms is relatively small on the support side.
The concentration is higher on the second layer side than on the support side.
at low or virtually zero concentrations.
so that it is distributed unevenly in the layer thickness direction.
be able to. In the light receiving member of the present invention having the above structure, the front
Germanium atoms or tin atoms contained in the recording layer
Regarding the atoms, the distribution concentration of those atoms is on the support side.
It is said that the concentration is relatively high, and the layer
layer containing neither umium atoms nor tin atoms)
In the layer thickness direction, the concentration is much lower on the side than on the support side.
can be unevenly distributed
Ru. The second layer of the light receiving member of the present invention having the above structure
of oxygen atoms, carbon atoms and nitrogen atoms contained in
For at least one type of atom selected from among
These atoms are contained in a uniform distribution in the layer thickness direction.
Alternatively, the atoms may be
The distribution concentration is relatively high on the support side, and
Much lower on the surface side of the second layer than on the support side
concentration or substantially near zero concentration.
so that it is unevenly distributed in the layer thickness direction.
be able to. Light reception in the light receiving member of the present invention having the above configuration
The layer consists of atoms belonging to a group or groups of the periodic table.
As one of the constituent layers, a charge injection prevention layer containing
can have Light reception in the light receiving member of the present invention having the above configuration
The layer may have a barrier layer as one of the constituent layers.
can. The first layer and the second layer of the light receiving member of the present invention
Regarding the creation, the above-mentioned purpose of the present invention can be efficiently achieved.
In order to achieve this, the layer thickness must be precisely determined at the optical level.
Since it is necessary to control the glow discharge method,
sputtering method, ion plating method, etc.
Vacuum deposition methods are commonly used, but in addition to these methods, optical
CVD method, thermal CVD method, etc. can also be adopted. Hereinafter, the optical receiver of the present invention will be described according to the illustrated embodiment.
Although the specific contents of the container member will be explained, the light receiving member of the present invention
The container members are not limited by these examples.
do not have. FIG. 1 explains the layer structure of the light-receiving member of the present invention.
This is a diagram schematically showing 10
0 is a light receiving member, 101 is a support, 102 is a first
layer, 102' is a germanium atom or a tin atom
102″ is a gel layer containing at least one of
Contains neither manium nor tin atoms
layer, 103 is the second layer, 104 is the free surface
ing. support The support 101 in the light receiving member of the present invention is
The surface has a resolution higher than that required for the light-receiving member.
It has minute irregularities, and the irregularities are composed of multiple spherical shapes.
It is due to a trace depression, and the spherical trace depression
Multiple microscopic irregularities are formed within the groove.
It is something. Below, the support in the light-receiving member of the present invention will be described.
The surface shape and its preferred manufacturing example are shown in Figures 4 and 5.
As will be explained, in the light receiving member of the present invention
The surface shape of the support and its manufacturing method are determined by these.
It is not limited to this. FIG. 4 shows a support in the light-receiving member of the present invention.
A typical example of the surface shape of
This is a partially enlarged schematic diagram of the section. In Fig. 4, 401 is a support, and 402 is a support.
Body surface, 403 is an uneven shape due to spherical trace depressions,
404 is an even smaller hole provided within the spherical trace recess.
It shows an uneven shape. Furthermore, FIG. 4 shows how to obtain the surface shape of the support.
It also shows one example of a preferred manufacturing method,
403' has minute irregularities 404' on its surface.
A rigid sphere 403' is shown, and the rigid sphere 403' is supported.
Naturally falling from a predetermined height from the body surface 402
By colliding with the support surface 402,
A spherical mark with minute irregularities 404 in the depression
It is possible to form an uneven shape 403 due to trace depressions.
It shows. Then, a rigid sphere 4 with approximately the same diameter R'
Using multiple pieces of 03' and placing them at the same height h,
Support by dropping simultaneously or sequentially
The body surface 402 has approximately the same curvature R and approximately the same
Forming a plurality of spherical trace depressions 403 having a width D of
can do. Figure 5 shows a plurality of spheres on the surface as described above.
The support is formed with an uneven shape due to the concave and convex shape.
Some typical examples are shown below. The smell of the figure
501 is a support, 502 is a surface of the support, and 50
3 has a plurality of even finer uneven shapes in the depression.
A spherical trace depression (in Fig. 5, a spherical trace depression)
Multiple microscopic uneven shapes formed within the trace depression
Although not shown in the figure, inside the spherical trace depression 503
Assume that each has a finer uneven shape.
Ru. ), 503' has minute irregularities on the surface.
Rigid sphere (similarly, the shape of minute irregularities on the surface is
Although not shown, there are minute irregularities on the surface of the rigid sphere.
It is assumed that it has a shape. ) are shown respectively.
ing. In the example shown in FIG. 5A, the surface 5 of the support 501
Multiple spheres with almost the same diameter in different parts of 02
503', 503', ... from almost the same height
Almost the same curvature and almost the same width when dropped
The multiple trace depressions 503, 503, ... are overlapped with each other.
Regularly uneven shapes formed densely so as to overlap each other.
It is formed into a shape. In this case, each other
To form overlapping depressions 503, 503,...
is when the sphere 503' collides with the support surface 502.
The spheres 503' and 50 are arranged so that their periods are shifted from each other.
Yes, it is necessary to allow 3',... to fall naturally.
It's no good. In addition, in the example shown in FIG. 5B,
The two types of spheres 503', 503', ... are almost the same.
or from a different height, the support 5
The surface 502 of 01 has two types of curvature and two types of width.
The plurality of depressions 503, 503,... are overlapped with each other.
The height of the unevenness on the surface is
It has irregular irregularities. Furthermore, Figure 5C (front view and cross section of the support surface)
In the example shown in the top view), the surface 502 of the support 501
, a plurality of spheres 503', 50 having approximately the same diameter
3',... are dropped irregularly from almost the same height,
Multiple depressions with almost the same curvature and multiple types of widths
503, 503, ... so that they overlap with each other.
This is caused by the formation of irregular irregularities.
Ru. As described above, the support of the light receiving member of the present invention
Forms an uneven shape on the surface with spherical trace depressions.
Moreover, within the spherical trace depression, there are a plurality of microscopic dents.
In order to form an uneven shape, it is necessary to
A rigid sphere with an uneven shape is dropped onto the surface of a support.
A preferred example is the method of
In the case of , the diameter of the hard sphere, the height to which it falls, and
The hardness of the support surface, the shape of the irregularities on the surface of the rigid sphere, and
and the size of the rigid sphere, or the amount of rigid spheres that are caused to fall.
By selecting appropriate conditions, it is possible to
Spherical trace depression with desired average curvature and average width
or fill the desired size in the spherical trace depression.
It is possible to form irregularities with a predetermined density.
Wear. That is, by selecting the above conditions,
The height and height of the irregularities formed on the surface of the support
It is formed in the pitch of unevenness or in the concave part of uneven shape.
The height of the unevenness and the pitch of the unevenness of the even finer unevenness
It is possible to freely adjust the height etc. according to the purpose.
to obtain a support having a desired uneven shape.
be able to. Then, the support of the light-receiving member has an uneven surface.
To make it into a finished product, use a lathe, milling machine, etc.
Created by cutting with a diamond cutting tool.
Someone who has proposed a method to do this that is reasonably effective.
However, in this method, the use of cutting oil,
Removal of chips unavoidably generated by cutting, cutting surface
It is essential to remove the cutting oil that remains in the
In the end, processing is complicated and inefficient, etc.
However, in the present invention, the support
As mentioned above, the uneven surface shape is shaped into a spherical trace depression.
The above problems can be completely eliminated by forming more
Efficiently and easily create supports with desired uneven surfaces
Can be created. The support 101 used in the present invention is electrically conductive.
It may be electrically insulating or electrically insulating.
stomach. As the conductive support, for example, NiCr,
Stainless steel, Al, Cr, Mo, Au, Nb, Ta, V,
Metals such as Ti, Pt, Pb or alloys of these may be mentioned.
It will be done. As the electrically insulating support, polyester, polyester, etc.
polyethylene, polycarbonate, cellulose, aluminum
acetate, polypropylene, polyvinyl chloride, polycarbonate
Polyvinylidene chloride, polystyrene, polyamide, etc.
synthetic resin film or sheet, glass, ceramic
Examples include Mitsuku, paper, etc. Electrical insulation properties of these
The support preferably has at least one surface
Conductive treatment and a photoreceptive layer on the conductive treated surface side.
It is desirable to provide For example, if it is glass, NiCr,
Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt,
Pd, In₂O₃, SnO₂, ITO (In₂O₃+SnO₂) etc.
By providing a thin film consisting of
Or synthetic resin film such as polyester film
NiCr, Al, Ag, Pb, Zn, Ni,
Gold such as Au, Cr, Mo, Ir, Nb, Ta, V, Tl, Pt, etc.
Vacuum evaporation, electron beam evaporation, sputtering
Provided on the surface with a ring etc., or attached with the metal mentioned above.
The surface is laminated to make it conductive.
Give. The shape of the support body is cylindrical, belt-shaped,
It can be of any shape such as a plate, but depending on the purpose,
Its shape can be determined as desired.
It is possible. For example, the light receiving member 1 in FIG.
Since 00 is used as an electrophotographic image forming member,
If available, use an endless belt for continuous high-speed copying.
Alternatively, it is desirable to have a cylindrical shape. Support thickness
may be adjusted as appropriate to form the desired light-receiving member.
However, flexibility is required as a light receiving member.
If the support is
It can be made as thin as possible within the range. death
However, in manufacturing and handling the support, mechanical
In terms of optical strength, etc., the thickness is usually 10μ or more. Next, the light receiving member of the present invention was used as a light receiving member for electrophotography.
When used as a container member, the support surface
An example of a surface manufacturing device is shown in FIGS. 6A and 6B.
However, the present invention is not limited thereby.
It's not something you can do. Aluminum is used as a support for electrophotographic light receiving members.
By applying normal extrusion processing to minium alloy etc.
Make it into a hole tube or mandrel tube and then draw it out.
Heat treatment is applied to the drawn pipe obtained through processing as necessary.
Cylindrical shape that has undergone treatment such as heat refining
A substrate is used, and the cylindrical substrate is shown in FIGS. 6A and 6B.
The uneven shape is formed on the surface of the support using manufacturing equipment.
I will make it happen. Form the above-mentioned uneven shape on the surface of the support
For example, the sphere used for this purpose is stainless steel.
metal, aluminum, steel, nickel, brass, etc.
Various rigid spheres such as metal, ceramic, plastic, etc.
Among others, durability and low cost
Rigid spheres made of stainless steel and steel due to
is desirable. The hardness of such a rigid sphere is
The hardness may be higher or lower than that of the holding body.
However, if the sphere is used repeatedly,
It is desirable that the hardness be higher than the hardness. The specific shape as described above is formed on the surface of the support of the present invention.
To form, on the surface of various rigid spheres as described above
It is necessary to use a material with unevenness, and
A rigid sphere with an uneven surface is, for example, embossed.
Methods of applying plastic processing such as
Mechanical treatments such as surface roughening methods (Nashiji method)
Methods of forming unevenness by
A method of forming irregularities using chemical methods such as etching.
It is created by processing a rigid sphere using
can be done. Furthermore, by forming unevenness like this
Electrolytic polishing, chemical polishing, and finishing polishing are applied to the hard sphere surface.
Polishing, anodic oxidation film formation, chemical conversion film formation,
For mounting, enameling, mounting, vapor deposition film formation, CVD method
Surface treatment such as film formation is performed to create an uneven shape (high
), hardness, etc. can be adjusted as appropriate. Figures 6A and 6B are for explaining an example of manufacturing equipment.
FIG. In the figure, 601 is an aluminum sheet for making a support.
cylinder, and the cylinder 601 is
The surface may be finished to an appropriate degree of smoothness. S
The cylinder 601 is supported by a rotating shaft 602.
and is driven by an appropriate driving means 603 such as a motor.
and is rotatable approximately around its axis.
604 is pivotally supported by a bearing 602, and a cylinder 6
It is a rotating container that rotates in the same direction as 01, and
The inside of the container 604 has an uneven surface.
A large number of rigid spheres 605 are accommodated. rigid sphere 6
05 is a protrusion provided on the inner wall of the rotating container 604.
It is supported by a plurality of ribs 606 that have come out, and
By the rotation of the rotating container 604, it reaches the top of the container.
transported. The rotation speed of the rotating container is moderate.
When it is transported to the top of the container along the container wall,
The rigid sphere 605 is dropped onto the cylinder 601.
dropped and collided with the cylinder surface, leaving a trace dent on the surface.
form. Note that holes are uniformly punched in the wall of the rotating container 604.
A shower provided on the outside of the container 604 when the container 604 is rotated.
-The cleaning liquid is sprayed from the pipe 607, and the
Under 601, rigid sphere 605, and rotating container 604
It can also be made so that it can be washed. in this way
In this case, the rigid spheres or the rigid sphere and the rotating container
attached due to static electricity caused by contact with
It is not necessary to wash out the garbage etc. to the outside of the rotating container 604.
to form the desired support without adhesion of rubber, etc.
be able to. The cleaning solution includes drying of the cleaning solution.
It is necessary to use a material with no unevenness or dripping.
Therefore, non-volatile substances alone or trichlor
Mixing with cleaning liquids such as ethane and trichlorethylene
It is preferable to use a compound. first layer In the light receiving member of the present invention, the first layer 10
2 is provided on the aforementioned support 101, and the first
The layer includes germanium atoms from the support 101 side.
(Ge) or at least one of tin atoms (Sn)
On the other hand, preferably further a hydrogen atom and a halogen
a-Si containing at least one of the atoms
[Hereafter, expressed as "a-Si (Ge, Sn) (H, X)"
Ru. ] and water as necessary.
At least one of elementary atoms and halogen atoms
a-Si [hereinafter referred to as "a-Si(H,X)"]
write. ] are laminated in order.
It has a multi-layered structure. and the photoreceptive layer 10
2 further includes a substance that controls conductivity as necessary.
It can contain quality. Halogen atom (X) contained in the first layer
Specifically, fluorine, chlorine, bromine, and iodine
In particular, fluorine and chlorine are preferred.
can be mentioned. and the first layer 102
The amount of hydrogen atoms (H) contained in the
amount of hydrogen atoms (X), or hydrogen atoms and halogen
The sum of the amounts of atoms (H+X) is usually 1 to 40 atomic
%, preferably 5 to 30 atomic%
Yes. Further, in the light receiving member of the present invention, the first layer
In order to efficiently achieve the purpose of the present invention, the layer thickness of
One of the important factors is the desired
When designing the light-receiving member, so that the characteristics
It is necessary to pay sufficient attention to the
100μ, preferably 1 to 80μ, more preferably
The thickness should be 2 to 50μ. By the way, the first layer of the light-receiving member of the present invention is
Contains rumanium atoms and/or tin atoms
The purpose of this is mainly to
The aim is to improve the absorption spectral characteristics of
Ru. That is, germanium atoms or
By containing / and tin atoms, the present
The light-receiving member of the invention exhibits various excellent properties.
However, in particular, it includes the visible light region.
Waves in the entire range from relatively short wavelengths to relatively long wavelengths
A fast photoresponsive material with excellent photosensitivity to long-duration light.
becomes. And this means that the semiconductor laser
This is especially noticeable when using light rays. In the first layer of the light receiving member of the present invention
is a germanium atom or/and a tin atom.
Uniform distribution in the layer 102' in contact with the support 101
or non-uniformly distributed state.
(Here, uniform distribution
The state refers to germanium atoms and/or tin atoms.
The distribution concentration is in a plane parallel to the support surface of layer 102'.
uniform in the thickness direction of the layer 102'
It also means that the shape of the distribution is uniform.
The state refers to germanium atoms and/or tin atoms.
The distribution concentration is in a plane parallel to the support surface of layer 102'.
Uniform in the direction, but in the thickness direction of the layer 102'
means that it is non-uniform. ). And in the layer 102' of the present invention, in particular:
Germanium atoms and/or tin atoms are present in layer 10
A state in which there is more distribution on the support side than on the 2″ side.
It is desirable to contain it so that
If the end of the support is exposed to germanium,
Extremely large distribution concentration of tin atoms and/or tin atoms
By doing so, long wavelength light such as semiconductor lasers can be
When using a source, in layer 102'' there is almost no
The layer 102' absorbs the long wavelength light that cannot be fully absorbed.
The surface of the support can be absorbed virtually completely.
Interference due to reflected light from surfaces is now prevented.
Ru. Further, in the light receiving member of the present invention, the layer 10
2' and layer 102'', respectively,
have a common component: silicon atoms
This ensures sufficient chemical stability at the laminated interface.
has been done. The germanium source contained in the layer 102' will be described below.
of tin atoms and/or tin atoms in the layer thickness direction of the layer 102'.
Some typical examples of distribution states are shown in germanium
This will be explained using Figures 7 to 15, taking the mu atom as an example.
Ru. In Figures 7 to 15, the horizontal axis is germanium.
The vertical axis represents the distribution concentration C of the umium atoms in the layer 102'.
Indicates the layer thickness, t_Bis the end of the layer 102' on the support side.
position, t_Tis the layer 102″ side opposite to the support side
Indicates the position of the end face. That is, germanium atoms
The contained layer 102' is t_Bt than the side_Ttowards the side
Layering is done. In addition, in each figure, the layer thickness and concentration are indicated.
If the values are shown as they are, the differences between each figure will not be clear.
The illustrations are shown in extreme form to
This is an explanatory model to make it easier to understand.
It is formal. FIG. 7 shows the gel contained in layer 102'.
First typical example of the distribution state of Ni atoms in the layer thickness direction
is shown. In the example shown in Figure 7, the germanium atom
the surface of the support on which the layer 102' contained is formed;
Interface position t where layer 102' contacts_BMoret₁position
Then, the distribution concentration C of germanium atoms is the concentration C₁
germanium atoms in layer 1 while taking a constant value
02′, position t₁Rather than concentration C₂More interface
position t_Tis gradually and continuously reduced until
Ru. Interface position t_TIn this case, the fraction of germanium atoms is
The cloth density C is substantially zero. (Here, “substantially zero” means that the amount is below the detection limit.
It is. ) In the example shown in FIG.
The distribution concentration C of rumanium atoms is at position t_FiveMore position_T
Concentration C up to₃gradually and continuously decreasing from
position t_Tconcentration C at_FourForm a distribution state such that
are doing. In the case of Figure 9, position t_BMore position_TUntil,
The distribution concentration C of germanium atoms is the concentration C_Fiveconstant
position and position t₂and position t_TBetween
Gradually and continuously decreased, position t_TIn, the distribution
The concentration C is substantially zero. In the case of Figure 10, the distribution of germanium atoms
Concentration C is at position t_BMore position_Tup to the concentration C₆Yo
At the beginning, the position is gradually decreased, and the position t₃steeper than
position t is continuously decreased in speed_Tsubstantially in
It is considered to be zero. In the example shown in Figure 11, germanium atoms
The distribution concentration C of is given by the position t_Band position t_FourIn between,
Concentration C₇is a constant value, and the position t_TThe distribution concentration in
C is assumed to be zero. position t_Fourand position t_Tminutes between
The cloth density C is linearly proportional to the position t._FourMore position_Tleading to
has been reduced to. In the example shown in FIG. 12, the distribution concentration C
is position t_BMore position_Fiveuntil the concentration C₈Take a constant value of
position t_FiveMore position_Tuntil the concentration C₉More concentration C_Ten
It is said that the distribution state decreases linearly until
Ru. In the example shown in FIG. 13, the position t_BMore position
t_TUntil , the distribution concentration C of germanium atoms is
Concentration C₁₁It is reduced more linearly and reaches zero.
It's on. In Figure 14, position t_BMore position₆leading to
Until then, the distribution concentration C of germanium atoms is the concentration
C₁₂More concentration C₁₃is linearly decreased until the position
t₆and position t_TBetween, the concentration C₁₃with a constant value of
An example is shown. In the example shown in Figure 15, germanium
The distribution concentration C of atoms is the position t_Bconcentration C at₁₄in
Yes, position t₇This concentration C until it reaches₁₄the beginning
is gradually decreased, and t₇around the position of
is sharply decreased at position t₇Then the concentration C₁₅considered to be
Ru. position t₇and position t₈At first, the relationship between
After that, it gradually decreased gradually.
position t₈At concentration C₁₆and position t₈and position t₉between
The position t is gradually decreased.₉In, the concentration
C₁₇leading to. position t₉and position_TThe concentration between
C₁₇Shape as shown in the figure to make it more substantially zero
It decreases according to a curve like this. As described above, as shown in FIGS. 7 to 15, the layer 102'
germanium atoms and/or tin contained in
We will explain some typical examples of the distribution state of atoms in the layer thickness direction.
As explained above, in the light receiving member of the present invention, the support
On the support side, germanium atoms or/and
The interface t_T~ side
, the distribution concentration C is smaller than that on the support side.
germanium atom with a significantly lowered portion
Or/and the distribution state of tin atoms is the constituent layer 102'
It is desirable that the That is, the layer constituting the light receiving member in the present invention
102' is preferably on the support side as described above.
Germanium atoms and/or tin atoms are present in the
It has a localized area where it is contained at a relatively high concentration.
is desirable. In the light receiving member of the present invention, the localized region is
Please explain using the symbols shown in Figures 7 to 15.
For example, the interface position t_BIt is desirable that it be provided within 5μ.
Yes. Then, the above localized region is at the interface position t_BMore than 5μ thick
In some cases, it is defined as the entire layer area up to
Sometimes it is considered part of the area. The localized region may be part or all of layer 102'.
The characteristics required for the photoreceptive layer to be formed
It is determined appropriately according to gender. The localized region contains germanium atoms contained within it.
distribution state of tin atoms and/or tin atoms in the layer thickness direction.
distribution concentration of germanium atoms and/or tin atoms.
The maximum value Cmax of
or more than 1000 atomic ppm, more preferably
5000 atomic ppm or more, optimally 1×10^Fouratomic
layer to achieve a distribution state of ppm or more.
preferably formed. That is, in the light receiving member of the present invention, germanium
Layer 1 containing nium atoms and/or tin atoms
02' is a layer thickness from the support side of 5μ or less (t_Bfrom
The maximum value Cmax of the distribution concentration exists in the layer area of 5μ layer)
It is preferable to form it so that it does. In the light-receiving member of the present invention, in the layer 102'
Germanium atoms or/and tin base to be contained
The content of children can efficiently achieve the purpose of the present invention.
It is necessary to decide appropriately according to the desired situation, and usually
is 1~6×10^Fiveatomic ppm, preferably
is 10~3×10^Fiveatomic ppm, more preferably 1
×10²~2×10^FiveSet to atomic ppm. Further, in the light receiving member of the present invention, the first layer
Add a substance that controls conductivity to the entire layer or a part of it.
Contained in the layer area in a uniform or non-uniform distribution state
can be done. The substance that controls the conductivity is a semiconductor component.
I can name the so-called impurities in the field.
belongs to group of the periodic table, giving P-type conductivity.
atoms (hereinafter simply referred to as "group atoms"), or
Atoms belonging to group of the periodic table that give n-type conductivity
(hereinafter simply referred to as "group atoms"), are used.
Ru. Specifically, the group atoms include B (boron).
element), Al (aluminum), Ga (gallium), In
(Thallium), Tl (Thallium), etc.
However, particularly preferred are B and Ga.
Group atoms include P (phosphorus), As (arsenic), and Sb.
(antimony), Bi (bismane), etc.
However, particularly preferred are P and Sb. The first layer of the present invention is a substance that controls conductivity.
or where group atoms are contained.
If so, either contain it in the entire layer area or
Whether it is included in the layer area depends on the purpose as described below.
It varies depending on the purpose and expected effect.
Therefore, the amount contained also differs. That is, the conductivity type and/or conductivity of the first layer
If the main purpose is to control
Contained in the entire layer area of the first layer, in this case,
Relatively little content of group atoms or group atoms
usually 1×10^-3~1×10³At atomicppm
Yes, preferably 5×10^-2~5×10²atomic
ppm, optimally 1×10^-1~2×10²At atomic ppm
be. In addition, some group elements are added to some layer regions in contact with the support.
Contains children or group atoms in a uniform distribution
or group atoms in the layer thickness direction or
The distribution concentration of group atoms is on the side in contact with the support.
When containing it at a high concentration,
Structures containing such group atoms or group atoms
Stratification or high concentration of group atoms or group atoms
The layer region contained in the layer functions as a charge injection blocking layer.
It will be a place to do it. That is, it contains group atoms.
If the free surface of the photoreceptor layer becomes polarized,
When subjected to electrical treatment, from the support side into the photoreceptive layer
To more effectively block the movement of injected electrons.
and when containing group atoms
The free surface of the photoreceptor layer undergoes polar charging treatment.
is injected from the support side into the photoreceptive layer when
The movement of holes can be more efficiently blocked.
Ru. In such cases, the content is relatively large.
Specifically, 30 to 5×10^Fouratomic
ppm, preferably 50-1×10^Fouratomic ppm, maximum
Suitably 1×10²~5×10³Set as taomic ppm. difference
Furthermore, the effect as the charge injection blocking layer can be efficiently
group atoms or containing group atoms.
layer or layer region provided at the end of the support body having
When the layer thickness of the photoreceptor layer is t and the layer thickness of the photoreceptive layer is T,
In this case, it is desirable that the relationship t/T≦0.4 holds true.
more preferably, the value of the relational expression is 0.35 or less,
Ideally, it should be 0.3 or less.
Further, the layer thickness t of the layer or layer region is generally 3
×10^-3~10μ, preferably 4×10^-3~8μ,
Optimally 5×10^-3It is desirable to set it to ~5μ. Next, group atoms or group atoms to be included in the first layer.
The amount of group atoms is relatively large on the support side.
and decreases from the support side to the second layer side
However, near the interface with the second layer, there is relatively little
amount or become substantially close to zero
When group atoms or group atoms are distributed in
Some typical examples are shown in Figures 16 to 24.
As will be explained, the present invention is based on these examples.
It is not limited. In each figure, the horizontal axis is
The vertical axis represents the group atom or the distribution concentration C of the group atom.
indicates the layer thickness of the first layer, t_Bis the support and the first layer
The interface position with t_Tis the boundary between the first layer and the second layer
Indicates the surface position. Figure 16 shows the group contained in the first layer.
The first distribution state of atoms or group atoms in the layer thickness direction
A typical example is shown. In this example, group atoms or
is the first layer containing group atoms and the support surface.
The interface position t where_BMore position₁Until then, Ichizokuhara
The distribution concentration C of children or group atoms is C₁constant value
and position t₁The interface position with the second layer t_Tto
is the group atom or the distribution concentration C of the group atom is concentrated.
Degree C₂The interface position t decreases continuously from_TIn
Group atoms or distribution concentration C of group atoms is C₃and
Become. FIG. 17 shows one other typical example.
In this example, the group atoms or
is the distribution concentration C of group atoms is the position t_Bfrom position t_T
until the concentration C_FourContinuously decreases from
Placement_Tconcentration C at_Fivebecomes. In the example shown in FIG. 18, the position t_Bfrom position t₂to
is the group atom or the distribution concentration C of the group atom is the concentration
C₆The position t is maintained at a constant value of₂from position t_Tleading to
up to the group atom or the distribution concentration C of the group atom
is the concentration C₇Gradually and continuously decreases from position t_TNii
Then, the distribution concentration C of group atoms or group atoms is
Effectively becomes zero. However, here it is essentially zero.
means that the amount is below the detection limit. In the example shown in Figure 19, the group atom or group
The distribution concentration C of atoms is at position t_BMore position_Tuntil now
So, the concentration C₈Continuously gradually decreases from position t_Tto
In this case, group atoms or distribution concentration C of group atoms
is effectively zero. In the example shown in FIG.
The distribution concentration C of atoms is the position t_BMore position₃Between
Then the concentration C₉is at a constant value of t, and the position t₃from position t_T
Between, the concentration C₉From concentration C_Tenuntil
Decrease linearly. In the example shown in FIG.
The distribution concentration C of atoms is the position t_BMore position_Fourleading to
until the concentration C₁₁is at a constant value of t, and the position t_FourMore position_T
until the concentration C₁₂From concentration C₁₃linearly until
decreases to In the example shown in Figure 22, the group atoms or
The distribution concentration C of group atoms is given by the position t_Bfrom position t_Tto
All the way, concentration C₁₄until it becomes essentially zero.
decreases linearly. In the example shown in Figure 23, the group atom or the group
The distribution concentration C of atoms is the position t_Bfrom position t_Fiveleading to
Concentration up to C₁₅From concentration C₁₆linearly until
decrease position t_Bfrom position t_Tuntil the concentration C₁₆constant value of
keep it. Finally, in the example shown in Figure 24, the group atoms or
is the distribution concentration C of group atoms is the position t_Bdark
Degree C₁₇and position t_Bfrom position t₆until the concentration C₁₇mosquito
At the beginning, it slowly decreases and reaches position t.₆Nearby there is a sudden
sharply decreased, position t₆Then the concentration C₁₈becomes. next,
position t₆from position t₇decreases rapidly at first
a little, then slowly gradually decreases, position t₇Nii
Then the concentration C₁₉becomes. further position t₇and position t₈between
decreases very slowly and gradually until position t₈smell
concentration C₂₀becomes. Furthermore, position t₈from position t_Tto
Until then, the concentration C₂₀becomes essentially zero from
gradually decreases to As in the examples shown in Figures 16 to 24, the first
group atoms or group atoms on the side closer to the support side of the layer of
It has a part with a high distribution concentration C of atoms, and has a third layer.
On the interface side, the distribution concentration C is quite low.
The part of the concentration or the part of the concentration that is substantially close to zero.
If it has a part, the part close to the support side
The distribution concentration of group atoms or group atoms is relatively
Providing localized areas of high concentration, preferably
From the interface position where the localized region contacts the support surface
By providing within 5μ, group atoms or
The layer region where the distribution concentration of group atoms is high is charged
The above-mentioned effect of forming the injection blocking layer is improved.
It is played even more efficiently. The above describes the distribution state of group atoms or group atoms.
We have described the effects of each individually, but the
A light-receiving member with characteristics that can achieve the desired purpose
For obtaining these group atoms or group
The distribution state of atoms and the number of atoms contained in the first layer
Adjust the amount of group atoms or group atoms as appropriate.
It goes without saying that they are used in combination as appropriate.
not. For example, at the support side end of the first layer
When a charge injection blocking layer is provided, the
Contained in the charge injection blocking layer in the outer first layer
conductivity of a polarity different from the polarity of the material that controls conductivity.
It may also contain a substance that controls conductivity.
Alternatively, a substance that controls conductivity of the same polarity can be
The amount is much smaller than that contained in the entry prevention layer.
It may also be included. Furthermore, in the light receiving member of the present invention, the support
As a constituent layer provided at the end on the body side, it prevents charge injection.
Instead of layers, the so-called
A barrier layer may also be provided or the barrier layer
It is also possible to use both the charge injection blocking layer and the charge injection blocking layer as constituent layers.
can. As a material for forming such a barrier layer,
is Al₂O₃, SiO₂,Si₃N_FourInorganic electrical insulation materials such as
and organic electrical insulating materials such as polycarbonate and polycarbonate.
can be done. second layer The second layer 103 of the light receiving member of the present invention is as described above.
provided on the first layer 102 of the free surface 104
A layer with oxygen atoms, that is, a surface layer, with oxygen atoms,
Carbon atoms are at least one of the nitrogen atoms
Amorphous ash containing one in a uniform distribution state
Recon [hereinafter referred to as "a-Si (O, C, N) (H, X)"]
It is written as. ]. A second layer 103 is provided on the light-receiving member of the present invention.
The objectives are moisture resistance, continuous repeated use characteristics, and electrical resistance.
Improved pressure resistance, usage environment characteristics, durability, etc.
These objectives constitute the second layer.
Oxygen atoms, carbon atoms or
contains at least one nitrogen atom.
This is achieved by making it possible. Further, in the light receiving member of the present invention, the first layer
Amorphous amorphous 102 and second layer 103
Each material has a common composition of silicon atoms.
Since it has atoms, the first layer 102 and the second layer
Chemical stability is ensured at the interface with layer 103.
Wear. In the second layer 103, oxygen atoms, carbon atoms and
and nitrogen atoms in a uniform distribution.
However, as the amount of these atoms increases
Accordingly, the above-mentioned characteristics are improved. However, there are many
If too much is used, the layer quality will deteriorate and the electrical and mechanical properties will deteriorate.
also decreases. For these reasons, these atoms
The content is usually 0.001 to 90 atomic%, preferably
1 to 90 atomic%, optimally 10 to 80 atomic%
Ru. The second layer also contains a small number of hydrogen atoms or halogen atoms.
It is desirable to contain at least one of them.
Hydrogen atoms (H) contained in the second layer
or amount of halogen atom (X) or hydrogen
The sum of the amounts of atoms and halogen atoms (H+X) is usually
1 to 40 atomic%, preferably 5 to 30 atomic%,
The optimum value is 5 to 25 atomic%. The second layer 103 has desired characteristics.
It needs to be formed carefully. That is, Siri
Con atoms, oxygen atoms, carbon atoms and nitrogen atoms
at least one selected from among the children, or
Furthermore, hydrogen atoms and/or halogen atoms are included as constituent atoms.
The child substance is determined by the content of each constituent atom and other
Depending on the preparation conditions, the morphology varies from crystalline to amorphous.
The electrical properties range from conductivity to semiconductivity.
properties, insulation properties, and photoelectric properties are photoconductive.
In order to show each property from non-photoconductive properties,
Second layer 103 having desired properties depending on purpose
The content and creation of each constituent atom so that it can form
It is important to choose conditions etc. For example, the second layer 103 may be used to improve electrical voltage resistance.
If the main purpose is to provide the second layer 1
The amorphous material constituting 03 is
It forms as a material with remarkable electrically insulating behavior.
In addition, the second layer 103 can be used continuously and repeatedly.
When installed with the main purpose of improving environmental characteristics
The amorphous material constituting the second layer 103 is
Although the degree of electrical insulation mentioned above is alleviated to some extent,
Something that has a certain degree of sensitivity to the light it irradiates
form as. In addition, in the present invention, the layer thickness of the second layer is also determined by the present invention.
important factors for efficiently achieving the objectives of
It is determined as appropriate depending on the intended purpose.
However, the oxygen atoms and carbon contained in the layer
elementary atoms, nitrogen atoms, halogen atoms, hydrogen atoms
depending on the amount or properties required for the second layer.
Decisions need to be made based on mutual and organic relationships.
Ru. In addition, economic
It is also necessary to consider this point. These things
Therefore, the thickness of the second layer is usually 3×10^-Five~30μ and
but more preferably 4×10^-3~20μ, especially good
Preferably 5×10^-3~10μ. The light-receiving member of the present invention has a layer structure as described above.
As a result, the above-mentioned amorphous silicon
Problems of light-receiving members having structured light-receiving layers
In particular, coherent monochromatic light
Interference also occurs when using a laser beam as a light source.
The appearance of interference fringe patterns in images formed by this phenomenon
significantly prevents the formation of visible images of very good quality.
can be done. Further, the light receiving member of the present invention has a light receiving member in the entire visible light range.
It has high photosensitivity, especially on the long wavelength side.
Due to its excellent characteristics, it is especially suitable for use with semiconductor lasers.
It has excellent quenching properties, fast photoresponse, and extremely
Excellent electrical, optical and photoconductive properties, electrical resistance
Indicates pressure resistance and usage environment characteristics. In particular, it has been applied as a light-receiving member for electrophotography.
In some cases, the residual potential has no effect on image formation.
Its electrical characteristics are stable, high sensitivity, and high
It has a signal-to-noise ratio and is resistant to light fatigue and repeated use.
Good usage characteristics, high density, and vivid halftones.
Stable, clear, high-resolution, high-quality images
can be obtained repeatedly. Next, the method for forming the photoreceptive layer of the present invention will be explained.
do. There is no amorphous material constituting the photoreceptive layer of the present invention.
The glow discharge method, the sputtering method, or the
Technology that utilizes discharge phenomena such as on-plating method
This is done by the empty deposition method. These manufacturing methods are
Manufacturing conditions, level of equipment capital investment, manufacturing scale,
Factors such as characteristics desired for the light-receiving member to be created
be selected and adopted as appropriate, depending on the desired characteristics.
Conditions for manufacturing photoreceptive members with
is relatively easy to control, and together with silicon atoms
Carbon atoms and hydrogen atoms can be easily introduced, etc.
Therefore, glow discharge method or spatter
The method using the method is preferred. Then, glow discharge method and
Formed using the puttering method in combination with the same equipment system.
You may. For example, a-Si(H,
To form a layer consisting of X), basically
Raw materials for supplying silicon that can supply silicon atoms (Si)
Along with the gas, hydrogen atoms (H) or/and halogen for introducing
The internal pressure of the raw material gas for introducing Gen atoms (X) is reduced.
The product can be introduced into a deposition chamber that can be
– A specified device that causes an electric discharge and is placed in a specified position in advance.
A layer consisting of a-Si(H,X) is deposited on the surface of the support.
Form. As the raw material gas for supplying Si, SiH_Four,
Si₂H₆,Si₃H₈,Si_FourH_Tengaseous state or gas such as
Examples include silicon hydride (silanes) that can be
In addition, the ease of layer formation work and good Si supply efficiency, etc.
At the point, SiH_Four,Si₂H₆is preferred. In addition, as a raw material gas for introducing the halogen atoms,
Examples include many halogen compounds, such as
Halogen gas, halides, interhalogen compounds
gases such as halogen-substituted silane derivatives
Preference is given to halogenated compounds in the form of
stomach. Specifically, fluorine, chlorine, bromine, and iodine
Logen gas, BrF, ClF, ClF₃,BrF_Five,BrF₃,
IF₇, interhalogen compounds such as ICl, IBr, and
SiF_Four,Si₂F₆, SiCl_Four, SiBr_FourSilicon halides such as
etc. Silicon halide as mentioned above
When using gaseous or gasifiable substances
without using separate raw material gas for Si supply.
It is composed of a-Si containing halogen atoms.
This method is particularly effective because it allows the formation of a layer of In addition, as a raw material gas for supplying hydrogen atoms,
is hydrogen gas, HF, HCl, HBr, HI, etc.
ionide, SiH_Four,Si₂H₆,Si₃H₈,Si_FourH_TenHydrogen such as
Silicon oxide or SiH₂F₂,SiH₂I₂,SiH₂Cl₂,
SiHCl₃,SiH₂Br₂,SiHBr₃halogen-substituted water such as
Substances that are in a gaseous state or can be gasified, such as silicon oxide
In the field using these raw material gases,
In some cases, it is called control of electrical or photoelectric properties.
The inclusion of hydrogen atoms (H), which is extremely effective in
It is effective because the amount can be easily controlled.
be. and the hydrogen halide or the halogen
When using hydrogen-substituted silicon hydride, halogen source
Since a hydrogen atom (H) is also introduced at the same time as a child,
Particularly effective. Reactive sputtering method or ion platey
Forming a layer consisting of a-Si (H,
For example, in the case of sputtering method,
For introducing halogen atoms, refer to the above
Halogen compounds or silicon containing the above halogen atoms
A gas of an elementary compound is introduced into the deposition chamber and the gas is purified.
All you have to do is create a lasma atmosphere. In addition, when introducing hydrogen atoms, hydrogen atom guide
Necessary raw material gas, e.g. H₂Or the above scenario
Gases such as orchids are placed in a deposition chamber for sputtering.
Introduce it and create a plasma atmosphere of the gas.
Bye. For example, in the case of the reactive sputtering method, Si
Gas for introducing halogen atoms using a target
and H₂If necessary, use an inert gas such as He or Ar.
A plasma atmosphere is created by introducing the
forming and sputtering the Si target.
In particular, from a-Si(H,X) on the support
form a layer of Structured with a-SiGe(H,X) by glow discharge method.
Silicon atoms (Si)
Raw material gas for Si supply that can supply
Raw material gas for Ge supply that can supply Mu atoms (Ge)
and a hydrogen atom (H) or/and a halogen atom (X)
Hydrogen atoms (H) and/or halogen atoms that can be supplied
(X) Supply raw material gas to a composting machine that can reduce the internal pressure.
Introduce the gas into the deposition chamber at the desired pressure, and
set in a predetermined position by causing a glow discharge in the
a-SiGe on the surface of a predetermined support
A layer composed of (H, X) is formed. Raw material gas for supplying Si, raw material for supplying halogen atoms
It can be used as a raw material gas and a raw material gas for supplying hydrogen atoms.
The substance composed of the above-mentioned a-Si(H,X) is
The same material used to form the layer
used. In addition, substances that can be used as raw material gas for the Ge supply
In terms of quality, GeH_Four, Ge₂H₆, Ge₃H₈, Ge_FourH_Ten,
Ge_FiveH₁₂, Ge₆H₁₄, Ge₇H₁₆, Ge₈H₁₈, Ge₉H₂₀etc
germanium hydride in the gaseous state or gasifiable
can be used. Especially when creating layers.
In terms of ease of handling and good Ge supply efficiency,
GeH_Four, Ge₂H₆, and Ge₃H₈is preferred. a-SiGe (H,X) by sputtering method
To form a layer composed of
A target made of germanium and a target made of germanium.
or silicon and germanium.
Using a target consisting of
by sputtering in a gas atmosphere.
Now. a-SiGe using ion plating method
When forming a layer composed of (H, X),
For example, polycrystalline silicon or single crystal silicon and polycrystalline silicon.
Crystal germanium or single crystal germanium
Each is housed in the evaporation port as an evaporation source, and this evaporation
Source: resistance heating method or electron beam method
(E.B. method) etc. to heat and evaporate the flying evaporated matter.
through the desired gas plasma atmosphere.
It can be done with. Sputtering method and ion plating
In either case, halogen is not present in the layer formed.
In order to contain atoms, the above-mentioned halides or
is a deposition chamber containing silicon compound gas containing halogen atoms.
to form a plasma atmosphere of the gas.
Bye. Also, when introducing hydrogen atoms, hydrogen
Raw material gas for atomic supply, e.g. H₂Or the above
Hydrogenated silanes or/and germanium hydrogenated
gases such as aluminum are introduced into the deposition chamber for sputtering.
to form a plasma atmosphere of these gases.
That's fine. Furthermore, raw material gas for supplying halogen atoms
As for the above-mentioned halides or halogens,
Silicon compounds containing are listed as effective.
However, in addition, halogens such as HF, HCl, HBr, HI, etc.
hydrogen chloride, SiH₂F₂,SiH₂I₂,SiH₂Cl₂, SiHCl₃,
SiH₂Br₂,SiHBr₃halogen-substituted silicon hydrides, such as
and GeHF₃, GeH₂F₂, GeH₃F, GeHCl₃,
GeH₂Cl₂, GeH₃Cl, GeHBr₃, GeH₂Br₂,
GeH₃Br, GeHI₃, GeH₂I₂, GeH₃Hydrogenation of I etc.
Germanium rogenide, etc., GeF_Four, GeCl_Four,
GeBr_Four, GeI_Four, GeF₂, GeCl₂, GeBr₂, GeI₂etc.
Gaseous or gaseous materials such as germanium halides, etc.
Substances that can be converted into carbonaceous substances can also be used as effective starting materials.
Ru. Glow discharge method, sputtering method or ion
Using the metal plating method, tin-containing
Amorphous silicon (hereinafter referred to as “a-SiSn (H,
It is written as X). ) forms a photoreceptive layer consisting of
To do this, the above-mentioned a-SiGe (H,
During the formation of the layer for which germanium atoms are supplied,
The starting material is used as a starting material for supplying tin atoms (Sn).
Instead, it is used to control its amount in the layer formed.
This is done by containing the Serves as raw material gas for supplying the tin atoms (Sn) mentioned above.
As a substance that absorbs water, tin hydride (SnH_Four)or
SnF₂, SnF_Four, SnCl₂, SnCl_Four, SnBr₂, SnBr_Four,
SnI₂, SnI_FourGaseous tin halides such as
can be gasified, and halogen
When tin oxide is used, it is
Forming a layer composed of a-Si containing rogen atoms
It is particularly effective because it can be achieved. inside
However, ease of handling during layer creation work and Sn supply efficiency
SnCl_Fouris preferred. And SnCl_FourDeparture for tin atom (Sn) supply
When used as a substance, to gasify it,
Solid SnCl_FourAt the same time as heating Ar, He,
Blow in an inert gas such as
It is preferable to publish the
The desired gas is placed in a deposition chamber with a reduced pressure inside.
Introduce it at a low pressure. glow discharge method, sputtering method, or
Using the on-plating method, a-Si(H,X)
Or a-Si (Ge, Sn) (H, Y) and further group
Amorphous material containing atoms or group atoms
To form a structured layer, a-Si(H,X)
Or when forming a-Si (Ge, Sn) (H, X) layer
a group atom or a starting material for the introduction of a group atom;
, a-Si(H,X) or a-Si(Ge,
Sn) (H, Y) used with starting materials for formation.
and control their amount into the layer to be formed.
Do what you have. Specifically, as a starting material for introducing group atoms,
For boron atom introduction, H₂H₆, B_FourH_Ten,
B_FiveH₉, B_FiveH₁₁, B₆H_Ten, B₆H₁₂, B₆H₁₄Hydrogen such as
Boron oxide, BF₃, BCl₃,BBr₃Boron halides such as
etc. In addition, AlCl₃, GaCl₃,Ga
(CH₃)₂,InCl₃, TlCl₃etc. can also be mentioned. Specifically, as a starting material for the introduction of group atoms.
is PH for introducing phosphorus atom.₃,P₂H_FourHydrogen such as
Phosphorus, PH_FourI, P.F.₃, P.F._Five, PCl₃, PCl_Five, PBr₃,
PBr_Five, Pi₃Examples include halogenated phosphorus such as. this
et al., AsH₃,AsF₃, ASCl₃, AsBr₃,AsF_Five,
SbH₃, SbF₃, SbF_Five, SbCl₃, SbCl_Five, BCl₃,
BBr₃Examples include boron halides such as. this
Others, AlCl₃, CaCl₃, Ga(CH₃)₂,InCl₃, TlCl₃etc
can also be mentioned. Specifically as a starting material for the introduction of group V atoms.
is PH for introducing phosphorus atoms.₃,P₂H₆Hydrogenation of etc.
Phosphorus, PH_FourI, P.F.₃, P.F._Five, PCl₃, PCl_Five, PBr₃,
PBr_Five, P.I.₃Examples include halogenated phosphorus such as. this
et al., AsH₃,AsF₃,AsCl₃, AsBr₃,AsF_Five,
SbH₃, SbF₃, SbCl₃, SbCl_Five, BiH₃, BiCl₃,
BiBr_Fiveetc. are also effective starting materials for the introduction of group V atoms.
It can be mentioned as a thing. Selected from oxygen atom, carbon atom and nitrogen atom
At least one type of
using the ion plating method or ion plating method,
The second layer 103 contains a-Si (O, C,
Regarding forming a layer composed of N)(H,X)
Then, proceed as in the case of forming the first layer described above.
will be carried out. For example, if a layer or layer region containing oxygen atoms is
-For formation by discharge method, silicon atoms
Raw material gas containing (Si) as a constituent atom and oxygen atom
Raw material gas containing (O) as a constituent atom and as necessary
constitutes a hydrogen atom (H) or a halogen atom (X)
Mix it with the raw material gas to be used at the desired mixing ratio.
or silicon atoms (Si)
The raw material gas, oxygen atoms (O) and hydrogen atoms
(H) is also the desired source gas.
or silicon atoms at a mixing ratio of
Raw material gas containing (Si) as a constituent atom and silicon raw material
(Si), oxygen atom (O), and hydrogen atom (H)
Used by mixing with a raw material gas whose constituent atoms are
be able to. Also, separately, silicon atoms (Si) and hydrogen atoms (H)
Oxygen atoms (O) are added to the raw material gas whose constituent atoms are
It is also possible to use a mixture of raw material gases as constituent atoms.
stomach. As a starting material for such introduction of oxygen atoms,
Gaseous state or gasification containing oxygen atoms as constituent atoms
Any gasified substance that can
It can be something. Specifically, the starting material for introducing oxygen atoms is
For example, oxygen (O₂), ozone (O₃), nitric oxide
element (NO), nitrogen dioxide (NO₂), nitrogen monoxide
(N₂O), nitrogen sesquioxide (N₂O₃), nitrogen tetroxide
(N₂O_Four), nitrogen pentoxide (N₂O_Five), nitrogen trioxide
(NO₃), silicon atom (Si) and oxygen atom (O)
Hydrogen atom (H) as a constituent atom, for example, disilyl
Xane (H₃SiOSiH₃), trisiloxane
(H₃SiOSiH₂OSiH₃) and other lower siloxanes.
can be given. Oxygen-containing oxygen atoms are produced by sputtering.
To form the layer, a single crystal or polycrystalline Si wafer is used.
-Ha or SiO₂Wafer or Si and SiO₂is mixed
Targeting wafers containing
Then, these were sputtered in various gas atmospheres.
This can be done by logging. For example, using a Si wafer as a target
If necessary, oxygen atoms and hydrogen atoms or/and
The raw material gas for introducing halogen atoms and
For sputtering, dilute with diluent gas according to
The gas plasma of these gases is introduced into the deposition chamber.
sputtering the Si wafer by forming a
That's fine. Also, separately, Si and SiO₂target different from
as or Si and SiO₂one target mixed with
For sputtering by using the
in an atmosphere of diluent gas as a gas or less
Also hydrogen atom (H) or/and halogen atom (X)
Sputtering in a gas atmosphere containing constituent atoms
It is done by ringing. Introduction of oxygen atom
As raw material gas for
The raw material gas for introducing oxygen atoms into the raw material gas shown in
gas is also effective in sputtering.
It can be used as Also, for example, a second layer containing carbon atoms can be
To form by the low discharge method, silicon atoms
Raw material gas containing (Si) as a constituent atom and carbon atom (C)
and hydrogen as necessary.
Atoms constituting the atom (H) or/and halogen atom (X)
Used by mixing with the raw material gas at the desired mixing ratio.
or with silicon atoms (Si) as constituent atoms.
The raw material gas consists of carbon atoms (C) and hydrogen atoms (H).
The raw material gas containing atoms is also mixed at the desired mixing ratio.
or composed of silicon atoms (Si)
Raw material gas as atoms, silicon atoms (Si), and carbon
Raw material gas whose constituent atoms are elementary atoms (C) and hydrogen atoms (H)
or even silicon atoms (Si).
and a raw material gas containing hydrogen atoms (H) and carbon atoms.
When using a mixture of raw material gases whose constituent atoms are carbon atoms (C),
Ru. It is effectively used as such raw material gas.
is SiH whose constituent atoms are Si and H_Four, Si₂H₆,
Si₃H₈,Si_FourH_TenHydrogen such as silanes such as
Silicon oxide gas, whose constituent atoms are C and H, e.g.
Saturated hydrocarbons having 1 to 4 carbon atoms, esters having 2 to 4 carbon atoms
Tyrenic hydrocarbons, acetylenes with 2 to 3 carbon atoms
Examples include carbon-hydrogen. Specifically, methane is a saturated hydrocarbon.
(CH_Four), ethane (C₂H₆), propane (C₃H₈), n
-butane (n-C_FourH_Ten), pentane (C_FiveH₁₂),workman
Ethylene (C₂H_Four)
Propylene (C₃H₆), butene-1 (C_FourH₈), Butte
N-2 (C_FourH₃), isoptylene (C_FourH₈), Bente
(C_FiveH_Ten), as acetylenic hydrocarbons,
Acetylene (C₂H₂), methylacetylene
(C₃H_Four), butin (C_FourH₆) etc. As a raw material gas containing Si, C, and H as constituent atoms
is Si(CH₃)_Four, Si(C₂H_Five)_FourAlkyl silicide such as
can be mentioned. In addition to these raw material gases, H
Of course, H is used as the raw material gas for introduction.₂can also be used. a-SiC(H,X) by sputtering method
To form the second layer consisting of
is a polycrystalline Si wafer or C (graphite) wafer.
Contains Aha or a mixture of Si and C
Using the wafer as a target, attach these to the desired target.
by sputtering in a gas atmosphere.
cormorant. For example, using a Si wafer as a target
In some cases, carbon atoms and hydrogen atoms or/and
Requires raw material gas to introduce halogen atoms.
Dilute with diluent gas such as Ar or He according to the
These gases are introduced into the deposition chamber for vine ring.
Forms a gas plasma to sputter the Si wafer
All you have to do is ring it. Also, should Si and C be separate targets?
Or as a single target with a mixture of Si and C.
When used, use it as a sputtering gas.
Raw materials for introducing hydrogen atoms and/or halogen atoms
Add the gas to the spa, diluting it with diluent gas if necessary.
Introduced into the deposition chamber for vine ring, gas plasma
All you need to do is to form and sputter. The spats
Raw material gas for introducing each atom used in the taring method
Then, the raw material gas used in the glow discharge method mentioned above is
It can be used as is. Furthermore, for example, amorphous amorphous atom containing a nitrogen atom
The second layer made of silicon is created using the glow discharge method.
To form a silicon atom (Si) as a constituent material,
The raw material gas as a child and the constituent atoms of nitrogen atoms (N)
The raw material gas and, if necessary, hydrogen atoms (H) or
and a raw material gas containing a halogen atom (X) as a constituent atom.
or
is a raw material gas whose constituent atoms are silicon atoms (Si).
constituent atoms, nitrogen atom (N) and hydrogen atom (H)
and raw material gas at the desired mixing ratio.
It can be used if it matches. Also, separately, silicon atoms (Si) and hydrogen atoms (H)
Nitrogen atoms (N) are added to the raw material gas whose constituent atoms are
It is also possible to use a mixture of raw material gases as constituent atoms.
stomach. As a starting material for such nitrogen atom introduction,
A gaseous substance whose constituent atoms are at least nitrogen atoms
Whether it is a gasified substance or a substance that can be gasified.
For example, it may be any of the following. Specifically, the starting materials for introducing nitrogen atoms are
has a nitrogen atom as a constituent atom or a nitrogen atom.
Nitrogen (N₂),a
ammonia (NH₃), hydrazishi (H₂NNH₂),a
Hydrogen dihydride (HN₃), ammonium azide
(NH_FourN₃), nitrogen such as nitrides and azides, etc.
Examples include elementary compounds. In addition to this, three
Nitrogen (F₃N), nitrogen tetrafluoride (F_FourN₂) etc.
These halogenated nitrogen compounds can be mentioned.
When using a rogogenated nitrogen compound, the nitrogen atom
In addition to introducing (N), introducing halogen atom (X)
You can also do it. Nitrogen-containing
To form the layer region, single-crystal or polycrystalline Si is used.
Wafer or Si₃N_FourWafer or Si and Si₃N_Fourbut
Target mixed wafers
As a result, these are spattered in various gas atmospheres.
This can be done by ringing. For example, using a Si wafer as a target
If necessary, nitrogen atoms and optionally hydrogen atoms or/and
The raw material gas for introducing halogen atoms and
For sputtering, dilute with diluent gas according to
The gas plasma of these gases is introduced into the deposition chamber.
sputtering the Si wafer by forming a
That's fine. Also, separately, Si and Si₃N_Fourtarget different from
as or Si and Si₃N_FourA single target mixed with
For sputtering by using the
in an atmosphere of diluent gas as a gas or less
Also hydrogen atom (H) or/and halogen atom (X)
Sputtering in a gas atmosphere containing constituent atoms
It is done by ringing. Introduction of nitrogen atom
The raw material gas for this purpose is the glow discharge example mentioned above.
The raw material gas for introducing nitrogen atoms into the raw material gas shown in
gas is also effective in sputtering.
It can be used as As described above, the light receiving member of the present invention
The receiving layer can be prepared using glow discharge method, sputtering method, etc.
Although the photoreceptive layer contains
subsequent atoms or secondary atoms, oxygen atoms, carbon atoms or nitrogen atoms
Elementary atoms, hydrogen atoms, and/or halogen atoms
The content of each of the particles flowing into the deposition chamber is controlled by
the gas flow rate or
controls the gas flow ratio between the starting materials for each atom supply.
This is done by controlling the In addition, the support during the formation of the first layer and the second layer
Conditions such as temperature, gas pressure in the deposition chamber, discharge power, etc.
In order to obtain a light-receiving member with desired properties,
is an important factor, and the function of the layer to be formed should be considered.
It should be selected as appropriate. Furthermore, this
These layer formation conditions are as follows for the first layer and the second layer.
Depending on the type and amount of each of the above atoms contained
Since the atoms to be included may also be different,
Determined by taking into consideration the type and amount of
There is also a need to do so. Specifically, a layer consisting of a-Si (H,
or group atoms or group atoms, or oxygen atoms.
a-Si containing atoms, carbon atoms, and nitrogen atoms
When forming a photoreceptive layer consisting of (H, X),
The support temperature is usually 50 to 350°C, but it is particularly preferable.
Preferably, the temperature is 50 to 250°C. The gas pressure inside the deposition chamber is
Usually 0.01 to 1 Torr, particularly preferably 0.1 to 1 Torr
Set to 0.5Torr. Also, the discharge power is 0.005 ~
50W/cm²Although it is normal, it is more preferable to
is 0.01~30W/cm², particularly preferably 0.01 to 20W/
cm²shall be. When forming a layer consisting of a/SiGe(H,X)
or contain group atoms or group atoms.
Form a layer consisting of a-SiGe(H,X)
For the case, the support temperature is usually 50-350℃
The temperature is more preferably 50 to 300°C, particularly preferably 50 to 300°C.
Preferably, the temperature is 100 to 300℃. Then, the gas in the deposition chamber
The gas pressure is usually 0.01 to 5 Torr, but preferably
is 0.001 to 3 Torr, particularly preferably 0.1 to 3 Torr.
Set to 1 Torr. Also, the discharge power is 0.005 ~
50W/cm²Usually, but preferably
0.01～30W/cm²and particularly preferably from 0.01 to
20W/cm²shall be. However, these supports for layer formation are
Specifics of support temperature, discharge power, and gas pressure in the deposition chamber
These conditions are usually not easily determined individually.
It's a shame. Therefore, the desired property
mutual and organic association to form a layer of crystalline material.
It is desirable to determine the optimal conditions for layer formation based on the
Delicious. By the way, the gel contained in the photoreceptive layer of the present invention
Rumanium atom or/and tin atom, oxygen atom,
carbon atom or nitrogen atom, group atom or group atom
children, or hydrogen atoms and/or halogen atoms.
In order to make the distribution state uniform, it is necessary to form a photosensitive layer.
It is necessary to keep the above conditions constant when
It is essential. In addition, in the present invention, when forming the photoreceptive layer,
The germanium atoms or germanium atoms contained in the layer are
is/and tin atom, or group atom or group atom
The distribution concentration of group atoms is changed in the layer thickness direction to obtain the desired value.
To form a layer having a distribution state in the layer thickness direction,
When using the glow discharge method, germanium
Mu atoms or/and tin atoms, or group atoms
or a deposition chamber for the gas of the starting material for the introduction of group atoms;
The gas flow rate when introduced into the chamber is adjusted according to the desired rate of change.
while keeping other conditions constant.
Form. And to change the gas flow rate,
Specifically, e.g. manually or with an externally driven motor.
The gas can be removed by any commonly used method such as
A predetermined needle valve installed in the middle of the gas flow path system.
What is necessary is to perform an operation to gradually change the opening of the tube. child
When , the rate of change of flow rate does not need to be linear;
For example, using a microcomputer, etc.,
Control the flow rate according to the rate of change curve to achieve the desired content.
A rate curve can also be obtained. In addition, the photoreceptive layer is formed using a sputtering method.
germanium atom or tin atom,
or group atoms or portions of group atoms in the layer thickness direction.
By changing the fabric concentration in the layer thickness direction, the desired layer thickness direction can be obtained.
To form the distribution state, a glow discharge method was used.
As in the case, germanium atoms or tin atoms,
or a group atom or a starting point for the introduction of a group atom.
The substance is used in a gaseous state and the gas is introduced into the deposition chamber.
Change the gas flow rate when entering according to the desired rate of change
let 〔Example〕 Hereinafter, the present invention will be further explained according to Examples 1 to 11.
Although explained in detail, the present invention is not limited by these.
It is not something that will be done. In each example, the photoreceptive layer was prepared using a glow discharge method.
It was formed using Figure 25 shows the glow discharge method.
This is an apparatus for manufacturing a light-receiving member of the present invention. 2502, 2503, 2504, 250 in the diagram
5,2506 gas cylinders have each of the present invention.
The raw material gas for forming the layer is sealed,
As an example, 2502 is SiF_Fourgas
(99.999% purity) cylinder, 2503 is H₂diluted with
B₂H_FourGas (purity 99.999%, below B₂H_Four/H₂and
Omitted. ) cylinder, 2504 is CH_FourGas (purity
99.999%) cylinder, 2505 is GeF_FourGas (purity
99.999%) cylinder, 2506 is inert gas (He)
It's a cylinder. And 2506′ is SnCl_Fouris in
It is an airtight container. To allow these gases to flow into the reaction chamber 2501
is the valve 252 of the gas cylinders 2502 to 2506
2-2526, leak valve 2535 is closed
Also, check that the inflow valves 2512-2
516, outflow valves 2517-2521, auxiliary valves
Make sure that lubricants 2532 and 2533 are open.
First, open the main valve 2534 to react.
The chamber 2501 and gas piping are evacuated. then vacuum
First layer and second layer on Al cylinder 2537
An example of forming a layer will be described below. First, from gas cylinder 2502, SiF_Fourgas, gas
B from cylinder 2503₂H₆/H₂gas, gas cylinder
GeF from 2505_FourGas valve 2522,
Open 2523, 2525 and check the outlet pressure gauge 252
The pressure of 7,2528,2530 is 1Kg/cm²adjusted to
and inlet valves 2512, 2513, 2515.
Gradually open the mass flow controller, 250
7,2508,2510. Continue
Outlet valve 2517, 2518, 2520 supplement
Gradually open the auxiliary valve 2532 to supply gas to the reaction chamber 2.
501. SiF at this time_Fourgas flow
amount, GeF_FourGas flow rate, B₂H₆/H₂The ratio of gas flow rates is
Outflow valves 2517, 251 to the desired value.
8,2520, and also the inside of the reaction chamber 2501.
Read the vacuum gauge 2536 so that the pressure is at the desired value.
Adjust the opening of main valve 2534 while watching the
do. Then, the temperature of the base cylinder 2537 increases.
Temperature in the range of 50 to 400℃ by thermal heater 2538
After confirming that the power is set to
540 to the desired power and inside the reaction chamber 2501.
In addition to causing a glow discharge in the
Using a computer (not shown),
According to the designed flow rate curve, SiF_Fourgas,
GeF_Fourgas and B₂H₆/H₂Control the gas flow rate of gas
While doing so, first place the cylinder on the base cylinder 2537.
Contains Con atoms, Germanium atoms and Boron atoms
A layer 102' is formed. Layer 10 to desired layer thickness
2' is formed, the outflow valve 25
Completely close 18,2520 and discharge if necessary.
Follow the same procedure to emit glow except for changing the conditions.
By continuing to apply electricity, gel is formed on the layer 102'.
Forming a layer 102″ that does not substantially contain nium atoms
can be achieved. In this way, layer 102' and layer 102'' are removed from the support side.
After forming the first layer 102 having
To form the second layer 103 on the layer 102 of
For example, SiF_Fourgas
and CH_FourEach gas can be changed to He, Ar, or
H₂Dilute with diluent gas such as
into the reaction chamber 1601 and follow the desired conditions.
and deposit a second layer. Gas flow valves required when forming each layer
It goes without saying that all other outflow valves should be closed.
Also, when forming each layer, the
The used gas is inside the reaction chamber 2501 and the outflow valve 25
Gas reaching inside reaction chamber 2501 from 17 to 2521
To avoid residue in the piping, drain valve
Close the valves 2517 to 2521 and auxiliary valve 253.
2, open 2533 and fully close main valve 2534.
It is necessary to open the system and evacuate the system to high vacuum once.
Do accordingly. In addition, if tin atoms are included in the first layer,
In this case, SnCl is used as the raw material gas._Fourwith the starting material
When using a gas that has been
solid SnCl_Fourusing heating means (not shown)
At the same time, the SnCl_FourAr, He, etc.
Inert gas such as Ar, He etc. from inert gas cylinder 2506
Blow sexual gas and pubbling. Occurred
SnCl_FourThe gas is the aforementioned SiF_Fourgas, GeF_Fourgas and
B₂H₆/H₂into the reaction chamber using the same procedure as gas etc.
Let it flow. Test example 1 Chemically treated SUS stainless steel rigid sphere with a diameter of 0.6 mm.
The surface was etched to form irregularities.
The processing agents used include hydrochloric acid, hydrofluoric acid, sulfuric acid,
Examples include acids such as chromic acid and alkalis such as caustic soda.
can be done. In this test example, concentrated hydrochloric acid 1
Hydrochloric acid solution mixed at a volume of pure 1 to 4
The immersion time of the hard sphere, the acid concentration, etc. were changed using
The shape of the unevenness was adjusted as appropriate. Test example 2 Rigid spheres treated by the method of Test Example 1 (Table
Height γ of surface unevenness_nax= 5μm), Figures 6A and B
Using the equipment shown in
The surface of the holder (diameter 60mm, length 298mm) is treated,
Irregularities were formed. The diameter R′ of the true sphere, the falling height h and the curvature R of the trace depression,
When we investigated the relationship with the width r, we found that the curvature R of the trace depression
and the width r are the conditions such as the diameter R′ of the perfect sphere and the falling height h.
It was confirmed that it can be determined by Also, traces
Pitch of depressions (density of trace depressions, and unevenness of pits)
h) is the rotational speed, rotational speed or stiffness of the cylinder.
Adjust to the desired pitch by controlling the amount of fall of the true sphere, etc.
It has been confirmed that it can be done. Furthermore, R
As a result of considering the size of R and D, R is
If it is less than 0.1mm, the rigid sphere will be small, light and easy to drop.
The lower height must be ensured and the formation of trace depressions
This is undesirable as it makes it difficult to control
If R exceeds 2.0mm, the rigid sphere becomes large and heavy.
To adjust the falling height, compare D for example.
If you want to make the target smaller, make the drop height extremely low.
Control the formation of trace depressions as necessary
This is undesirable because it makes it difficult to
If it is less than 0.02mm, the rigid sphere will fall smaller and lighter.
The height must be ensured and the formation of vestigial depressions must be avoided.
This is undesirable as it makes it difficult to control.
were confirmed respectively. Furthermore, when we tried the formed trace depressions, we found that
Inside the trace depression, there is a microscopic groove corresponding to the surface unevenness of the rigid sphere.
It was confirmed that small irregularities were formed. Example 1 Aluminum alloy cylinder as in Test Example 2
D shown in the upper column of Table 1A, and
Cylindrical Al support (cylinder) with D/R Nos. 101 to 106) were obtained. Next, on the Al support (cylinder No. 101 to 106)
The conditions shown in Figure 25 are as shown in Table 1B below.
A light-receiving layer was formed using the manufacturing equipment described above. These light receiving members are shown in FIG.
Using an image exposure device, wavelength 780nm, spot diameter
Perform image exposure by irradiating 80 μm laser light.
Then, development and transfer were performed to obtain an image. obtained
The occurrence of interference fringes in images is shown in the bottom column of Table 1A.
It was hot in the cage. Note that FIG. 26A schematically shows the entire exposure apparatus.
FIG. 26B is a plan view showing the entire exposure apparatus.
FIG. In the figure, 2601
is a light receiving member, 2602 is a semiconductor laser, 26
03 indicates fθ lens, 2604 indicates polygon mirror.
are doing. Next, as a comparison, a conventional diamond cutting tool
Aluminum alloy cylinder surface treated with
Dar (No.107) (diameter 60mm, length 298mm, uneven pitch
100μm, depth of unevenness 3μm), same as above.
A light-receiving member was prepared in the same manner. The resulting photoreception
When the parts were observed under an electron microscope, it was found that the surface of the support
is parallel to the layer interface of the photoreceptive layer and the surface of the photoreceptive layer.
was doing. Using this light-receiving member, the above-mentioned
Image formation is performed in the same manner, and the resulting image is
The same evaluation as above was carried out. the result
were as shown in the bottom column of Table 1A.

[Table] ×…Unsuitable for practical use, △…Possible for practical use, ○…Good practicality, ◎…Excellent practicality

[Table] Example 2 In the same manner as in Example 1 except that the photoreceptive layer was formed according to the layer formation conditions shown in Table 2B,
A photoreceptive layer was formed on the Al support (cylinder Nos. 101 to 107). In addition, when forming the first layer
The gas flow rates of SiF ₄ gas and GeF ₄ gas were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG. When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 2A.

[Table] ×…Unsuitable for practical use, △…Possible for practical use, ○…Good practicality, ◎…Excellent practicality

[Table] Example 3 A spherical trace depression (D=450±50μm), ( Al support (Cylinder No. 301 ~
306) was obtained. Next, a light-receiving layer was formed on the Al support (cylinder Nos. 301 to 306) using the manufacturing apparatus shown in FIG. 25 under the conditions shown in Table 3B below. Note that GeF ₄ gas and SiF ₄ gas at the time of forming the first layer
The gas flow rate was automatically adjusted by microcomputer control according to the gas flow rate change line shown in FIG. When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 3A.

[Table] ×…Unsuitable for practical use, △…Acceptable for practical use, ○
…Good practicality, ◎…Practical
Particularly good

【table】

[Table] Example 4 All procedures were carried out in the same manner as in Example 3, except that the photoreceptive layer was formed according to the layer formation conditions shown in Table 4B.
A photoreceptive layer was formed on the Al support (cylinder Nos. 301 to 306). In addition, when forming the first layer
The gas flow rates of SiF ₄ gas and GeF ₄ gas were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG. When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 4A.

[Table] ×…Unsuitable for practical use, △…Acceptable for practical use, ○
…Good practicality, ◎…Practical
Especially good

[Table] Examples 5 to 11 Al support of Example 1 (Cylinder No. 103 to 106)
A light-receiving member was produced in the same manner as in Example 1 except that a light-receiving layer was formed thereon according to the layer forming conditions shown in Tables 5 to 11. In Examples 5 to 11, the flow rate of the gas used during the first layer formation was automatically adjusted by microcomputer control according to the flow rate change lines shown in FIGS. 30 to 36, respectively. Further, the boron atoms contained in the first layer were B ₂ H ₆ /SiF ₄ +GeF ₄ ≈100 ppm, and the boron atoms were introduced as much as possible so that the entire layer was doped at about 200 ppm. Image formation was performed on the obtained light-receiving member in the same manner as in Example 1. No interference fringes were observed in any of the images obtained, and they were of extremely good quality.

【table】

【table】

【table】

【table】

【table】

【table】

【table】

[Summary of effects of the invention]

By having the light-receiving member of the present invention having the above-described layer structure, all of the problems of the light-receiving member having a light-receiving layer made of amorphous silicon described above can be solved, and in particular Even when monochromatic laser light is used as a light source, it is possible to significantly prevent the appearance of interference fringes in the formed image due to interference phenomena, and to form an extremely high-quality visible image. In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. It exhibits excellent electrical, optical, photoconductive properties, electrical voltage resistance, and use environment characteristics. In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical properties are stable, it is highly sensitive, and it has high sensitivity.
It has a high signal-to-noise ratio, has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

[Brief explanation of the drawing]

FIG. 1 is a diagram schematically showing an example of the light-receiving member of the present invention, and FIGS. 2 and 3 are diagrams for explaining the principle of preventing the generation of interference fringes in the light-receiving member of the present invention. FIG. 2 is a partially enlarged view showing that the generation of interference fringes can be prevented in a light-receiving member in which irregularities formed by spherical trace depressions are formed on the surface of the support, and FIG. 3 is a diagram showing a conventional surface. FIG. 3 is a diagram showing that interference fringes occur in a light-receiving member in which a light-receiving layer is deposited on a regularly roughened support.
FIGS. 4 and 5 are schematic diagrams for explaining the uneven shape of the support surface of the light-receiving member of the present invention and the method for producing the uneven shape. FIG. 6 is a diagram schematically showing a configuration example of an apparatus suitable for forming the uneven shape provided on the support of the light-receiving member of the present invention, in which FIG. 6A is a front view and FIG. 6B is a front view. The figure is a longitudinal sectional view. Figures 7 to 15 are diagrams showing the distribution state of germanium atoms or tin atoms in the layer thickness direction in the first layer of the present invention, and Figures 16 to 24 are diagrams showing the distribution state of germanium atoms or tin atoms in the first layer of the present invention. FIG. 3 is a diagram showing the distribution state of atoms or group atoms in the layer thickness direction; in each diagram, the vertical axis represents the layer thickness of the photoreceptive layer, and the horizontal axis represents the distribution concentration of each atom. FIG. 25 is an example of an apparatus for manufacturing the light-receiving layer of the light-receiving member of the present invention, and is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method. FIG. 26 is a diagram illustrating an image exposure apparatus using laser light. 27 to 36 are diagrams showing changes in gas flow rate in the first layer formation of the present invention, in which the vertical axis represents the layer thickness of the photoreceptive layer, and the horizontal axis represents the gas flow rate of the gas used. 1 to 3, 100...light receiving member, 101...support, 102, 201, 30
1...First layer, 102'...Layer containing at least one of germanium atoms or tin atoms, 102''...Layer containing neither germanium atoms nor tin atoms, 103,20
2,302...second layer, 104,203,30
3... Free surface, 204,304... Interface between the first layer and the second layer, 40 for Figures 4 and 5
1,501...Support, 402,502...Support surface, 403,503...Spherical trace depression, 40
3', 503'...Rigid sphere having an uneven shape on the surface, 404...Minute uneven shape formed in the spherical trace depression, 404'... uneven shape formed on the surface of the rigid sphere, Regarding Fig. 6, 601...Cylinder, 602...Rotating shaft (receiving), 603...Driving means, 604...Rotating container, 605...Rigid sphere having an uneven shape on the surface, 606...Ribs provided on the inner wall of the container, 607...Shower tube, regarding Fig. 25, 2501...Reaction chamber, 2502-25
06... Gas cylinder, 2506'... Sealed container for SnCl ₄ , 2507-2511... Mass flow controller, 2512-2516... Inflow valve, 2
517-2521...Outflow valve, 2522-2
526... Valve, 2527-2531... Pressure regulator, 2532, 2533... Auxiliary valve, 2
534... Main valve, 2535... Leak valve, 2536... Vacuum gauge, 2537... Basic cylinder, 2538... Heater, 2539
...Motor, 2540...High frequency power supply, No. 26
Regarding the figure, 2601...light receiving member, 2602
... Semiconductor laser, 2603 ... fθ lens, 2
604...Polygon mirror.

Claims (1)

[Claims] 1. A first layer made of an amorphous material containing silicon atoms and at least one of germanium atoms and tin atoms, on a support, and a first layer made of an amorphous material containing silicon atoms, oxygen atoms, and carbon atoms. A photoreceptive layer comprising a second layer made of an amorphous material containing at least one selected from atoms and nitrogen atoms, the first layer comprising germanium atoms. It has a multilayer structure including a layer A containing at least one of atoms or tin atoms and a layer B containing neither germanium atoms nor tin atoms in order from the support side, and the surface of the support has a width D of the recess.
is 500 μm or less, and the radius of curvature R and width D of the depression are
It has unevenness due to a plurality of spherical trace depressions with 0.035≦D/R, and further inside the spherical trace depressions.
A light-receiving member characterized in that minute irregularities of 0.5 to 20 μm are formed. 2. The light-receiving member according to claim 1, wherein the second layer contains at least one kind selected from the oxygen atoms, carbon atoms, and nitrogen atoms in a uniform distribution state in the layer thickness direction. 3. The light-receiving member according to claim 1, wherein the light-receiving layer contains atoms belonging to Group 1 or Group 3 of the periodic table. 4. The light-receiving member according to claim 1, wherein the light-receiving layer has, as one of its constituent layers, a charge injection prevention layer containing atoms belonging to Group 1 or Group 3 of the periodic table. 5. The light-receiving member according to claim 1, wherein the light-receiving layer has a barrier layer as one of the constituent layers. 6. The light-receiving member according to claim 1, wherein the irregularities formed by the spherical trace depressions have the same radius of curvature. 7. The light-receiving member according to claim 1, wherein the unevenness caused by the spherical trace depressions is formed by depressions having substantially the same radius of curvature and width. 8. The light-receiving member according to claim 1, wherein the support is a metal body. 9. The distribution concentration of atoms belonging to group or groups of the periodic table contained in the photoreceptive layer is relatively high on the support side, and is considerably lower or substantially lower on the second layer side than on the support side. 4. The light-receiving member according to claim 3, wherein the light-receiving member has a concentration close to zero and is distributed non-uniformly in the layer thickness direction. 10 The distribution concentration of germanium atoms or tin atoms contained in the layer A is relatively high on the support side, and the concentration on the layer B side containing neither germanium atoms nor tin atoms is considerably lower than that on the support side. The light-receiving member according to claim 1, wherein the light-receiving member is non-uniformly distributed in the layer thickness direction. 11 The distribution concentration of at least one type of atom selected from oxygen atoms, carbon atoms, and nitrogen atoms contained in the second layer is relatively high on the support side, and 2. The light-receiving member according to claim 1, wherein the light-receiving member has a considerably lower concentration than that on the support side or a concentration substantially close to zero and is distributed non-uniformly in the layer thickness direction.