JPH047666U - - Google Patents
Info
- Publication number
- JPH047666U JPH047666U JP4806990U JP4806990U JPH047666U JP H047666 U JPH047666 U JP H047666U JP 4806990 U JP4806990 U JP 4806990U JP 4806990 U JP4806990 U JP 4806990U JP H047666 U JPH047666 U JP H047666U
- Authority
- JP
- Japan
- Prior art keywords
- heater
- crucible
- melted
- explanatory diagram
- shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案装置の模式的縦断面図、第２図
は遮蔽体の効果を数値解析により計算した結果を
示す説明図、第３図は従来の装置及び本考案によ
る装置双方の装置より引上げた単結晶の電気抵抗
を評価した説明図、第４図は従来の装置及び本考
案の装置双方の使用頻度による固体層の厚みの変
化を比較した説明図、第５図はＣＺ法による結晶
成長装置を示す模式的縦断面図、第６図は溶融層
法による従来の結晶成長装置を示す模式的縦断面
図、第７図〜第１０図は溶融層法での充填材料の
相変化を示す一次元モデル図、第１１図は従来の
結晶成長装置内の中心軸上の温度分布を示す説明
図である。
１……坩堝、２……ヒータ、４……引上げ軸、
８……保温筒、１０……チヤンバ、１１……固体
原料供給器、２２……遮蔽体。
Figure 1 is a schematic vertical cross-sectional view of the device of the present invention, Figure 2 is an explanatory diagram showing the results of numerical analysis of the effect of the shield, and Figure 3 is a diagram showing the results of both the conventional device and the device of the present invention. An explanatory diagram evaluating the electrical resistance of a pulled single crystal, Figure 4 is an explanatory diagram comparing changes in the thickness of the solid layer depending on the frequency of use of both the conventional device and the device of the present invention, and Figure 5 is an explanatory diagram evaluating the electrical resistance of the pulled single crystal. FIG. 6 is a schematic vertical cross-sectional view showing a conventional crystal growth device using the fused layer method, and FIGS. 7 to 10 show the phase change of the filling material using the fused layer method. The one-dimensional model diagram shown in FIG. 11 is an explanatory diagram showing the temperature distribution on the central axis within the conventional crystal growth apparatus. 1... Crucible, 2... Heater, 4... Pulling shaft,
8...Heating cylinder, 10...Chamber, 11...Solid raw material supply device, 22...Shielding body.
Claims (1)
配設した坩堝内の結晶用原料を、前記ヒータにて
上側から下側へ向けて溶融しつつ、その溶融液か
ら結晶を引き上げて成長させる装置において、 前記ヒータの下方に、該ヒータから坩堝下部へ
の輻射熱を遮断する遮蔽体を設けたことを特徴と
する結晶成長装置。[Scope of Claim for Utility Model Registration] A raw material for crystallization in a crucible, which is surrounded by a heater and a heat insulating wall located outside the crucible, is melted from the upper side to the lower side by the heater, and the molten liquid is melted by the heater. An apparatus for growing a crystal by pulling it from a crucible, characterized in that a shield is provided below the heater to block radiant heat from the heater to the lower part of the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4806990U JPH047666U (en) | 1990-05-07 | 1990-05-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4806990U JPH047666U (en) | 1990-05-07 | 1990-05-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH047666U true JPH047666U (en) | 1992-01-23 |
Family
ID=31564558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4806990U Pending JPH047666U (en) | 1990-05-07 | 1990-05-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH047666U (en) |
-
1990
- 1990-05-07 JP JP4806990U patent/JPH047666U/ja active Pending
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