JPH04774A - Squid and manufacture thereof - Google Patents

Squid and manufacture thereof

Info

Publication number
JPH04774A
JPH04774A JP2100476A JP10047690A JPH04774A JP H04774 A JPH04774 A JP H04774A JP 2100476 A JP2100476 A JP 2100476A JP 10047690 A JP10047690 A JP 10047690A JP H04774 A JPH04774 A JP H04774A
Authority
JP
Japan
Prior art keywords
squid
organic
complex
superconducting
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2100476A
Other languages
Japanese (ja)
Inventor
Kazue Kawabata
和重 川端
Makoto Mizutani
眞 水谷
Keiji Tanaka
田中 啓治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to JP2100476A priority Critical patent/JPH04774A/en
Publication of JPH04774A publication Critical patent/JPH04774A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

PURPOSE:To make it possible to manufacture SQUID without requiring a high temperatures process, such as heat treatment, by forming a thin film on an insulation substrate by vacuum-depositing an organic superconducting complex and providing a constriction by removing a part thereof. CONSTITUTION:First, an organic superconducting complex is put into a deposition boat 2 inside a chamber 1 of a vacuum deposition apparatus. After the pressure inside the chamber is decreased to a vacuum degree of 10Pa or smaller, the deposition boat 2 is heated to the vicinity of a sublimation point of the organic superconducting complex, usually in the range of 150 deg. to 260 deg.C, and the complex is deposited on the substrate held in a substrate holder 4. The thickness of the deposited film is adjusted by opening/closing a shutter 5 while the thickness is being monitored by a quartz oscillator film thickness gauge 6. The size of the film is controlled by the type of the deposition boat. A SQUID is produced by forming a constriction 13 by removing a part of the organic superconducting thin film 12 provided on an insulation substrate 11 in the above way by using a mechanical cutting member or a method of decomposing superconducting complexes.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は新規なスクイッド素子及びその製造方法に関す
るものである。さらに詳しくいえば、本発明は、熱処理
などの高温プロセスを必要とせずとも製造しうる、有機
超電導錯体を用いて成るスクイッド素子、及びこのもの
を低温プロセスのみを用いて効率よく製造する方法に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a novel SQUID element and a method for manufacturing the same. More specifically, the present invention relates to a SQUID device using an organic superconducting complex that can be manufactured without requiring high-temperature processes such as heat treatment, and a method for efficiently manufacturing this device using only low-temperature processes. It is.

[従来の技術〕 スクイッド素子(Superconduc目ng qu
antuminterference device)
は、超電導材料内部に弱い結合部分(ジョセフソン接合
)、すなわちくびれ部分などを有するものであって、例
えばスクイッド磁束計やジョセフソン電圧標準装置など
に用いられる。
[Prior art] Squid element (Superconductor)
antuminterference device)
The superconducting material has a weak coupling part (Josephson junction), that is, a constricted part, etc. inside the superconducting material, and is used, for example, in SQUID magnetometers and Josephson voltage standard devices.

従来、スクイッド素子における超電導材料としてはPb
系やNb系の合金が用いられていたが、現在ではPb系
は酸化が進みゃすいため、Nb系が主流となっている。
Conventionally, Pb has been used as a superconducting material in SQUID devices.
Although Pb-based alloys and Nb-based alloys have been used, Nb-based materials are now the mainstream because Pb-based materials are easily oxidized.

しかしなから、このNb系合金を用いて均質な薄膜を形
成させてスクイッド素子を製造する場合、薄膜化プロセ
スにおいて、700°C以上の高温を必要とするという
欠点がある。
However, when a SQUID element is manufactured by forming a homogeneous thin film using this Nb-based alloy, there is a drawback that a high temperature of 700° C. or more is required in the thinning process.

また、スクイッド素子の製造に、例えばYBa2Ctz
Oy−、などの酸化物系超電導体を用いる方法が提案さ
れているが(特開平1−120879号公報)、この方
法においても900°C以上の高温(熱処理)プロセス
を必要とするという欠点を有している。
In addition, for example, YBa2Ctz is used for manufacturing SQUID devices.
A method using oxide superconductors such as Oy-, etc. has been proposed (Japanese Unexamined Patent Publication No. 1-120879), but this method also has the drawback of requiring a high temperature (heat treatment) process of 900°C or higher. have.

他方、近年、電子供与体と電子受容体間の電荷移動力に
よって2種の分子が結合した電荷移動錯体は、導電性や
常磁性、電子ビームに対する感応性、湿度に対する電気
感応性などの特性を有し、例えば電子材料やレジスト材
料、あるいは電極活性物質、感湿素子、エレクトロミッ
ク表示素子などとしての応用が可能であることから注目
され、積極的な研究がなされている。
On the other hand, in recent years, charge transfer complexes, in which two types of molecules are bound by the charge transfer force between an electron donor and an electron acceptor, have been developed with properties such as conductivity, paramagnetism, sensitivity to electron beams, and electrical sensitivity to humidity. It has attracted attention and is being actively researched because it can be applied as, for example, electronic materials, resist materials, electrode active materials, moisture-sensitive elements, electromic display elements, etc.

このような電荷移動錯体の中でも、特に臨界温度以下で
超電導性を示す有機超電導体は、例えばジョセフソン接
合素子や高感度磁気検知などへの利用が可能であること
から、最近注目されている。
Among such charge transfer complexes, organic superconductors, which exhibit superconductivity below a critical temperature, have recently attracted attention because they can be used, for example, in Josephson junction devices and high-sensitivity magnetic sensing.

[発明が解決しようとする課題] 本発明は、熱処理などの高温プロセスを必要とせずとも
製造しうる新規なスクイッド素子を提供することを目的
としてなされjこものである。
[Problems to be Solved by the Invention] The present invention has been made for the purpose of providing a novel SQUID element that can be manufactured without requiring high-temperature processes such as heat treatment.

[課題を解決するための手段] 本発明者らは前記目的を達成するために鋭意研究を重ね
j;結果、絶縁体基板上に、有機超電導体薄膜を設けた
ものから成るスクイ・ンド素子により、その目的を達成
しうろことを見い出し、この知見に基づいて本発明を完
成するに至った。
[Means for Solving the Problems] In order to achieve the above object, the present inventors have conducted extensive research; as a result, a SQUID element consisting of an organic superconductor thin film provided on an insulating substrate has been developed. The inventors have found a way to achieve this objective, and have completed the present invention based on this knowledge.

すなわち、本発明は、絶縁体基板上に、有機超電導体薄
膜を設けたものから成るスクイ・ンド素子を提供するも
のである。
That is, the present invention provides a SQUID element comprising an organic superconductor thin film provided on an insulating substrate.

本発明に従えば、前記スクイッド素子は、絶縁体基板上
に、有機超電導錯体を真空蒸着させて薄膜を形成させ、
次いでその一部を除去してくびれ部分を設けることによ
り、製造することができる。
According to the present invention, the SQUID element comprises vacuum-depositing an organic superconducting complex on an insulating substrate to form a thin film;
It can then be manufactured by removing a portion of it to provide a constricted portion.

以下、本発明の詳細な説明する。The present invention will be explained in detail below.

本発明において用いられる有機超電導錯体としては、例
えばビス(エチレンジチオ)テトラチアフルバレン(B
EDT−TTF)を電子供与体とする電荷移動錯体、具
体的には、第1表に示すものを挙げることができる。こ
れらの中で、超電導転移温度の高さから考えて(B E
 D T  T T F ) zCu(SCN)2や(
BEDT−TTF)213が好適である。
As the organic superconducting complex used in the present invention, for example, bis(ethylenedithio)tetrathiafulvalene (B
EDT-TTF) as an electron donor, specifically, those shown in Table 1 can be mentioned. Among these, considering the high superconducting transition temperature (B E
D T T T F ) zCu(SCN)2 and (
BEDT-TTF) 213 is preferred.

1)σ−(BEDT 第  1 表 TTF)21.錯体を熱処理したもの これらの有機超電導錯体は、ビス(エチレンジチオ)テ
トラチアフルバレン(BEDT−TTF)と対応する電
子受容体とを公知の方法、例えば電解結晶成長法、拡散
法、徐冷法などの結晶成長法、あるいはBEDT−TT
Fに気相、液相、または固相でハロゲン元素を反応させ
る方法なとによって製造することができる。
1) σ-(BEDT 1st Table TTF)21. These organic superconducting complexes are prepared by heating bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and the corresponding electron acceptor using known methods such as electrolytic crystal growth, diffusion, slow cooling, etc. Growth method or BEDT-TT
It can be produced by a method of reacting F with a halogen element in a gas phase, liquid phase, or solid phase.

本発明において用いられる絶縁体基板としては、例えば
塩化ナトリウムや塩化カリウムなとの単結晶、ガラス、
石英ガラス、あるいはポリ塩化ビニルやポリエチレンな
どの有機物などが挙げられる。
Examples of insulating substrates used in the present invention include single crystals of sodium chloride and potassium chloride, glass,
Examples include quartz glass and organic materials such as polyvinyl chloride and polyethylene.

これらの絶縁体基板上に、前記有機超電導体薄膜を形成
させる方法としては、例えは真空蒸着法、スパッタリン
グ法、イオンクラスタビーム法、CVD法などの薄膜化
法を用いることができるが、本発明方法においては、該
有機超電導錯体が分解しにくい低エネルギーの薄膜形成
法である真空蒸着法が用いられる。
As a method for forming the organic superconductor thin film on these insulating substrates, for example, a thin film forming method such as a vacuum evaporation method, a sputtering method, an ion cluster beam method, or a CVD method can be used. As a method, a vacuum evaporation method is used, which is a low energy thin film forming method in which the organic superconducting complex is difficult to decompose.

この真空蒸着法においては、該基板と有機超電導錯体と
の距離は10cm以内、好ましくは5cm以内に保つの
が好ましい。この距離がlocmを超えると該超電導錯
体か分解しt;す、形成された薄膜の配向性が十分でな
くなるなどの傾向が生しる。
In this vacuum evaporation method, the distance between the substrate and the organic superconducting complex is preferably kept within 10 cm, preferably within 5 cm. If this distance exceeds locm, the superconducting complex tends to decompose, and the formed thin film tends to have insufficient orientation.

また真空度は通常10pa (パスカル)以下、好まし
くは1O−2Pa以下の範囲で選ばれる。この真空度か
10Paを超えると超電導錯体の酸化や分解が起こる恐
れがあり好ましくない。該超電導錯体の加熱は、その温
度が通常昇華点近傍に達するように行われるが、該錯体
の種類によって加熱温度は適宜選はれる。基板の温度は
通常30〜150℃の範囲で選ばれる。この温度か15
0°Cを超えると該錯体が分解する傾向が生じる。
Further, the degree of vacuum is usually selected within the range of 10 Pa (Pascal) or less, preferably 10-2 Pa or less. If the degree of vacuum exceeds 10 Pa, the superconducting complex may be oxidized or decomposed, which is not preferable. The superconducting complex is usually heated so that its temperature reaches near the sublimation point, but the heating temperature is appropriately selected depending on the type of the complex. The temperature of the substrate is usually selected in the range of 30 to 150°C. This temperature is 15
Above 0°C, the complex tends to decompose.

次に、有機超電導体薄膜の好適な形成方法の1例を添付
図面に従って説明する。第1図は超電導体薄膜を形成す
るための真空蒸着装置の1例の概略図であって、チェン
バー1内に蒸着ポート2と、その昇華口3かも10cm
以内の距離に基板ホルダー4が設置され、さらに蒸着ポ
ート2と基板ホルダー4との間にシャッター5が設けら
れている。
Next, one example of a suitable method for forming an organic superconductor thin film will be described with reference to the accompanying drawings. FIG. 1 is a schematic diagram of an example of a vacuum evaporation apparatus for forming a superconductor thin film, and there is a evaporation port 2 in a chamber 1 and a sublimation port 3 with a diameter of 10 cm.
A substrate holder 4 is installed at a distance within the range of 1 to 3, and a shutter 5 is further provided between the vapor deposition port 2 and the substrate holder 4.

まず、蒸着ポート2の中へ所要の有機超電導錯体を入れ
、排気弁7を介してチェンバー内を真空度10Pa以下
、好ましくは1O−2Pa以下に減圧にしたのち、蒸着
ポート2を有機超電導錯体の昇華点近傍まで、通常15
0〜260°Cの範囲に加熱し、基板ホルダー4に保持
された基板上に該錯体を蒸着させる。この際、あらかじ
めチェンバー1内をアルゴンなどの不活性ガスで置換し
たのち、減圧にしてもよい。蒸着膜の膜厚の調整は、水
晶振動子膜厚計6でモニターしながら、シャッター5の
開閉によって行われる。この方法によると、膜厚が数1
00μm程度まで可能であるし、また膜の大きさは蒸着
ポートの型によって制御することができる。このように
して得られた有機超電導体薄膜は基板面に対して高電気
伝導度方向が平行になるように配向し、かつ単一相から
成っている。
First, the required organic superconducting complex is put into the vapor deposition port 2, and the pressure inside the chamber is reduced to a degree of vacuum of 10 Pa or less, preferably 10-2 Pa or less via the exhaust valve 7, and then the vapor deposition port 2 is filled with the organic superconducting complex. Up to near the sublimation point, usually 15
The complex is deposited on the substrate held by the substrate holder 4 by heating to a temperature in the range of 0 to 260°C. At this time, the inside of the chamber 1 may be replaced with an inert gas such as argon in advance, and then the pressure may be reduced. The thickness of the deposited film is adjusted by opening and closing the shutter 5 while monitoring with a crystal resonator film thickness meter 6. According to this method, the film thickness is several 1
The film size can be controlled by the type of vapor deposition port. The organic superconductor thin film thus obtained is oriented such that the direction of high electrical conductivity is parallel to the substrate surface, and consists of a single phase.

なお、(B E D T −T T F ) 21 s
については、このような方法によるとσ型(B E D
 T −T T F ) 21 s(超電導を示さない
)のものも混入することがあるが、この場合は空気中で
30−150℃の温度で熱処理することにより、膜の構
造をβ型などの超電導を示す相にすることができる。β
型は基板温度約70°Cで生じ、θ、に、γ型はそれぞ
れ約60°C140°C130°Cの温度で生じる。
In addition, (B E D T - T T F ) 21 s
According to this method, the σ type (B E D
T - T T F ) 21 s (which does not exhibit superconductivity) may also be mixed in, but in this case, by heat treatment in air at a temperature of 30-150°C, the structure of the film can be changed to β-type, etc. It can be made into a phase that exhibits superconductivity. β
The .theta., .gamma. and .gamma. types occur at temperatures of approximately 60.degree. C., 140.degree. C. and 130.degree. C., respectively.

このようにして形成された有機超電導体薄膜の膜厚は1
0nmないし1μm程度がよく、薄すぎると電導性に劣
るし、厚すぎるともろくなる傾向がみられる。
The thickness of the organic superconductor thin film thus formed is 1
The thickness is preferably about 0 nm to 1 μm; if it is too thin, the conductivity will be poor, and if it is too thick, it will tend to become brittle.

本発明のスクイッド素子は、このようにして絶縁体基板
上に設けられた有機超電導体薄膜の一部を除去して、く
びれ部分を形成させることにより得られる。この一部を
除去する方法としては、例えはワイヤーソーやタイヤモ
ンドカッターなどによる機械的切断法や、電子線又はレ
ーザー照射による超電導錯体の分解法などを用いること
ができるが、くびれ部分を大きくする場合は前者の方法
が適しており、逆に小さくして集積化を図る場合には後
者の方法が適している。
The SQUID element of the present invention is obtained by removing a portion of the organic superconductor thin film thus provided on the insulating substrate to form a constricted portion. To remove this part, for example, mechanical cutting using a wire saw or tire cutter, or decomposition of the superconducting complex by electron beam or laser irradiation can be used. In this case, the former method is suitable, and on the other hand, when miniaturization and integration are desired, the latter method is suitable.

このようにして作製された本発明のスクイッド素子は、
所望により、環境(水蒸気など)からの悪影響や機械的
強度を向上させるために、その全体をポリカーボネート
などの有機絶縁ポリマーによって包み込んでもよい。
The SQUID device of the present invention produced in this way is
If desired, the entire structure may be encapsulated in an organic insulating polymer such as polycarbonate to improve mechanical strength and adverse effects from the environment (such as water vapor).

本発明のスクイッド素子は、第2図(a)及び第2図(
b)に示すように成形することにより、RFスクイッド
や、DCCスクイッドしての利用も可能である。この図
において、11は絶縁体基板、12は有機超電導体薄膜
、13はくびれ部分を示す。
The SQUID element of the present invention is shown in FIGS. 2(a) and 2(a).
By molding as shown in b), it is also possible to use it as an RF Squid or a DCC Squid. In this figure, 11 is an insulating substrate, 12 is an organic superconductor thin film, and 13 is a constricted portion.

[実施例] 次に実施例により本発明をさらに詳細に説明するか、本
発明はこれらの例によってなんら限定されるものではな
い。
[Examples] Next, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to these Examples in any way.

実施例I BEDT−TTF  [日本カーリット(株)製]及び
テトラブチルアンモニウムトリョウジド[和光紬薬(株
)製]を原料として、電解結晶成長法により(BEDT
−TTF)2I3錯体を作製した。
Example I Using BEDT-TTF [manufactured by Nippon Carlit Co., Ltd.] and tetrabutylammonium triodide [manufactured by Wako Tsumugi Co., Ltd.] as raw materials, BEDT-TTF was produced by an electrolytic crystal growth method.
-TTF)2I3 complex was prepared.

次に、第1図に示す真空蒸着装置を用い、前記錯体lo
mgをるつぼ(蒸着ポート)2に入れ、るつぼ口(昇降
口)3から2cm離れた位置に3×3X0.3cm3の
塩化ナトリウム単結晶基板を基板ホルダー4に保持し、
基板温度70°Cするつぼ温度200°C1チ工ンバー
内真空度10−’Paの条件で真空蒸着を行い、基板上
に膜厚500nmの薄膜を形成させた。次いで、これを
70°Cで5時間空気中でアニールし、高い超電導転移
温度を示す相に変化させた。
Next, using the vacuum evaporation apparatus shown in FIG. 1, the complex lo
mg into a crucible (evaporation port) 2, and hold a 3 x 3 x 0.3 cm3 sodium chloride single crystal substrate in a substrate holder 4 at a position 2 cm away from the crucible mouth (elevating port) 3.
Vacuum evaporation was performed under the conditions of a substrate temperature of 70°C, a crucible temperature of 200°C, and a chamber vacuum of 10-'Pa to form a thin film with a thickness of 500 nm on the substrate. This was then annealed in air at 70°C for 5 hours to transform it into a phase exhibiting a high superconducting transition temperature.

このようにして得られた薄膜から、0.5Xlc講の膜
の部分を残して、それ以外の膜をナイフによって除去し
、次いで残った膜の中心部分にワイヤーソーによりくび
れ部分を形成させ、第3図に示すような、絶縁体基板1
1上に、面積が1 mm2のくびれ部分13を有する有
機超電導体薄膜12が設けられた構造のスクイッド素子
を作製した。
From the thin film obtained in this way, the remaining film was removed with a knife, leaving the 0.5Xlc film part, and then a constriction was formed in the center of the remaining film with a wire saw. Insulator substrate 1 as shown in Figure 3
A SQUID element having a structure in which an organic superconductor thin film 12 having a constricted portion 13 with an area of 1 mm 2 was provided on top of the organic superconductor thin film 12 was fabricated.

この素子に、金ペーストを用いて電流電圧端子を取付け
、くびれ部分の電圧−電流特性を調べた。
Current and voltage terminals were attached to this element using gold paste, and the voltage-current characteristics of the constricted portion were examined.

第4図にこの測定系の概念図を示す。すなわち、スクイ
ッド素子14に、金ペーストを用いて端子15 a、 
15 b、 15 c、 15 dを取付け、電源16
、信号処理装置17及び10Ωの抵抗18を設置する。
Figure 4 shows a conceptual diagram of this measurement system. That is, the SQUID element 14 is provided with terminals 15 a, using gold paste.
Install 15 b, 15 c, 15 d, and power supply 16
, a signal processing device 17 and a 10Ω resistor 18 are installed.

測定は、まず素子14を液体ヘリウム温度に冷却して超
電導状態にしたのち、電源16よりくびれ部分13と抵
抗18に電圧を印加し、くびれ部分13に流れる電流を
抵抗18の両端に発生する電圧から調べるとともに、く
びれ部分13に発生する電圧を素子14に取付けた電圧
端子15c及び15dから調へt;。この両方の電圧か
ら、くびれ部分13の電圧−電流特性を信号処理装置1
7において調べた。
The measurement is carried out by first cooling the element 14 to liquid helium temperature to make it superconducting, then applying a voltage to the constriction part 13 and the resistor 18 from the power supply 16, and converting the current flowing through the constriction part 13 into the voltage generated across the resistor 18. At the same time, the voltage generated at the constricted portion 13 is measured from the voltage terminals 15c and 15d attached to the element 14. From these two voltages, the voltage-current characteristics of the constricted portion 13 are determined by the signal processing device 1.
Investigated in 7.

第5図は、くびれ部分にマイクロ波を照射した際の電圧
−電流特性曲線で、くびれ部分がスクイッド素子として
働くために必要なジョセフソン接合していることを示す
階段状の変化(シャピロステップ)が見られた。また、
この階段状ステップの電圧はマイクロ波の周波数に比例
することが確認された。
Figure 5 shows the voltage-current characteristic curve when the constriction is irradiated with microwaves, showing a step-like change (Shapiro step) indicating that the constriction is a Josephson junction, which is necessary for the constriction to function as a SQUID element. It was observed. Also,
It was confirmed that the voltage of this stepped step is proportional to the microwave frequency.

[発明の効果] 本発明によると、超電導材料として有機超電導錯体を用
い、真空蒸着法により絶縁体基板上に有機超電導体薄膜
を形成させたのち、その一部を除去してくびれ部分を形
成させることにより、熱処理などの高温プロセスを必要
とせず、低温プロセスのみでスクイッド素子を作製する
ことができる。
[Effects of the Invention] According to the present invention, an organic superconducting complex is used as a superconducting material, and after an organic superconducting thin film is formed on an insulating substrate by a vacuum evaporation method, a part of the organic superconducting thin film is removed to form a constricted portion. As a result, a SQUID element can be manufactured using only a low-temperature process without requiring a high-temperature process such as heat treatment.

このようにして得られた本発明のスクイッド素子は適当
に成形することにより、RFスクイッドやDCCスクイ
ッドして利用することができ、例えばスクイッド磁束計
やジョセフソン電圧標準装置などに好適に用いられる。
By appropriately molding the SQUID element of the present invention thus obtained, it can be used as an RF SQUID or DCC SQUID, and is suitably used, for example, in a SQUID magnetometer, a Josephson voltage standard device, and the like.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のスクイッド素子の製造において用いら
れる真空蒸着装置の1例の概略図、第2図(a)、(b
)及び第3図は、それぞれ本発明のスクイッド素子の異
なった例の構造を示す概略図、第4図は本発明のスクイ
ッド素子におけるくびれ部分の電圧−電流特性を調べる
ための概念図、第5図は本発明のスクイッド素子におけ
るくびれ部分にマイクロ波を照射した際の電圧−電流特
性の1例を示すグラフである。 第1図において、符号1はチェンバー、2は蒸着ポート
、3は昇華口、4は基板ホルダー 5はシャッター、6
は膜圧針、7は排気弁であり、第2図、第3図及び第4
図において11は絶縁体基板、12は有機超電導体薄膜
、13はくびれ部分、14はスクイッド素子、15 a
、  15 b、  15 c及び15dは、金ペース
トで取付けられた端子、16は電源、17は信号処理装
置、18は抵抗である。
FIG. 1 is a schematic diagram of an example of a vacuum evaporation apparatus used in manufacturing the SQUID device of the present invention, and FIGS. 2(a) and (b)
) and FIG. 3 are schematic diagrams showing the structures of different examples of the SQUID element of the present invention, FIG. The figure is a graph showing an example of voltage-current characteristics when the constricted portion of the SQUID element of the present invention is irradiated with microwaves. In Figure 1, numeral 1 is a chamber, 2 is a deposition port, 3 is a sublimation port, 4 is a substrate holder, 5 is a shutter, and 6
is a membrane pressure needle, 7 is an exhaust valve, and Figures 2, 3, and 4
In the figure, 11 is an insulator substrate, 12 is an organic superconductor thin film, 13 is a constriction part, 14 is a SQUID element, and 15 a
, 15 b, 15 c, and 15 d are terminals attached with gold paste, 16 is a power supply, 17 is a signal processing device, and 18 is a resistor.

Claims (1)

【特許請求の範囲】 1 絶縁体基板上に、有機超電導体薄膜を設けたものか
ら成るスクイッド素子。 2 絶縁体基板上に、有機超電導錯体を真空蒸着させて
薄膜を形成させ、次いでその一部を除去してくびれ部分
を設けることを特徴とする請求項1記載のスクイッド素
子の製造方法。
[Claims] 1. A SQUID device comprising an organic superconductor thin film provided on an insulating substrate. 2. The method for manufacturing a SQUID device according to claim 1, characterized in that the organic superconducting complex is vacuum-deposited on the insulating substrate to form a thin film, and then a portion of the thin film is removed to provide a constricted portion.
JP2100476A 1990-04-18 1990-04-18 Squid and manufacture thereof Pending JPH04774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2100476A JPH04774A (en) 1990-04-18 1990-04-18 Squid and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2100476A JPH04774A (en) 1990-04-18 1990-04-18 Squid and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH04774A true JPH04774A (en) 1992-01-06

Family

ID=14274972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2100476A Pending JPH04774A (en) 1990-04-18 1990-04-18 Squid and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH04774A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354591B2 (en) 2006-04-10 2013-01-15 Sumitomo Electric Industries, Ltd. Superconducting cable

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354591B2 (en) 2006-04-10 2013-01-15 Sumitomo Electric Industries, Ltd. Superconducting cable

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