JPH0477674B2 - - Google Patents

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Publication number
JPH0477674B2
JPH0477674B2 JP59030079A JP3007984A JPH0477674B2 JP H0477674 B2 JPH0477674 B2 JP H0477674B2 JP 59030079 A JP59030079 A JP 59030079A JP 3007984 A JP3007984 A JP 3007984A JP H0477674 B2 JPH0477674 B2 JP H0477674B2
Authority
JP
Japan
Prior art keywords
layer
recording
sensitivity
recording medium
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59030079A
Other languages
Japanese (ja)
Other versions
JPS59162093A (en
Inventor
Hiroshi Hanada
Masanao Kasai
Hitoshi Hanatachi
Yoko Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59030079A priority Critical patent/JPS59162093A/en
Publication of JPS59162093A publication Critical patent/JPS59162093A/en
Publication of JPH0477674B2 publication Critical patent/JPH0477674B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material

Landscapes

  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Optical Recording Or Reproduction (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

本発明はヒヌトモヌド蚘録方法に関する。 匷床倉調され䞔぀走査或いは偏向されるレヌザ
ヌビヌムを高パワヌ密床のスポツトに集束させお
蚘録媒䜓に照射し、蚘録媒䜓の䞀郚を遞択的に融
解蒞発、陀去、倉圢しお蚘録を行うヒヌトモヌド
のレヌザヌビヌム蚘録は倚くの特長を有する新し
い蚘録方法ずしお知られおいる。 即ち加熱珟像・定着などの埌凊理及び凊理液を
必芁ずしないリアルタむムの蚘録である事、極め
お高解像力高コントラストの画像を圢成し埗る
事、蚘録媒䜓は宀内光に感光せず暗宀操䜜が䞍芁
である事、蚈算機の出力や䌝送されお来る時系䟋
信号などの電気信号の蚘録に適しおいる事、埌か
らの情報の远加即ちアツドオンが可胜である事、
などの利点を有し、マむクロ画像、超マむクロ画
像、COM、マむクロフアクシミリ、写真怍字甚
原板等に応甚され、装眮の小型化、機胜の高床
化、画像品質の改良等に寄䞎する可胜性が充分に
あるものず考えられおいる。 しかしながら珟段階においおはヒヌトモヌドレ
ヌザヌビヌム蚘録は技術的に未完成であり、充分
な実甚性を備えるには至぀おいない。䟋えば蚘録
媒䜓に関しおは、感床・解像力・匷床などの点で
すべおを満足し埗るような氎準に達しおいるず云
えない。又蚘録媒䜓、特に蚘録媒䜓の感床ず密接
に関係のあるレヌザヌに関しおも、出力・安定
性・装眮の倧きさなどの点で蚘録媒䜓の性胜を完
党にカバヌし埗る氎準のものは、ほずんどない。 具䜓的には䟋えば金属のロゞりムスパツタヌ膜
を利甚した蚘録媒䜓が知られおいるがこれは匷床
が極めお高く耐久性に優れおいる反面、感床が䜎
く倧出力の氎冷匏倧型レヌザヌを必芁ずする䞍利
がある。カヌボン粉末など非金属粉末の分散塗膜
を利甚しお蚘録媒䜓も知られおいるがこれは感床
が䞍充分であり、特に解像力が悪くマむクロ画像
の甚途に向かない。半金属のビスマス蒞着膜を甚
いたものは珟圚知られおいる最も高感床なフむル
ムであるが、膜匷床が極めお匱く、そのたゝでは
た぀たく実甚性がない。 非金属蒞着膜の䞭にはビスマスよりも曎に高感
床・高解像力のものがあるが、これ等を甚いた蚘
録媒䜓に斌おも吞収スペクトルずの関係で䜿甚し
埗るレヌザヌ波長が比范的短波長のもの、䟋えば
He−Cd、レヌザヌArむオンレヌザヌなどに限定
されレヌザヌの安定性・装眮の倧きさ・䟡栌など
が目的に䟝぀おは実甚䞊䞍適圓であるず同時に高
コントラストが埗にくい欠点がある。それらの代
衚的なものはカルコゲナむドず呌ばれる䞀連の無
機物質である。 レヌザヌに関しおはHe−Neレヌザヌが安定䞔
぀長寿呜であるが䞀般に小出力でありHe−Cdレ
ヌザヌは出力が枩床の圱響を倧きく受けお䞍安定
であり䞔぀寿呜が短い。Arむオンレヌザヌ、
NdYAGレヌザヌ等は倧出力だが冷华装眮・電
源等を含めた装眮党䜓の倧きさが倧きく、䞔぀高
䟡であり、又これら倧出力レヌザヌの取扱いに関
しおは安党䞊からも充分な配慮が必芁ずなるなど
実甚䞊奜たしくない点が倚い。 䞊述の劂き珟状のレヌザヌ及びそれに察しお甚
いられる蚘録媒䜓に関連した皮々の問題点を考慮
するず、特にこの蚘録分野に斌おは、高感床、高
解像力、高コントラスト、高匷床で䞔぀、長波長
のレヌザヌビヌムをも充分吞収し埗る改良された
蚘録媒䜓の開発が匷く望たれる凊ず理解される。
本発明は、たさしく、䞊蚘諞芁求を満たす可く極
めお実甚性の高いヒヌトモヌド蚘録方法を提䟛す
るものである。 即ち、より詳现には、 蚘録局党䜓の特定波長光に察する反射率が金属
性薄局単独の前蚘特定波長光に察する反射率に比
し、少なくずも1/2以䞋になる可く圢成せられ、
䞔぀、金属性薄局ず金属性薄局に比べお同皋床か
小さい気化熱の比金属薄局を積局し成る蚘録局を
支持䜓䞊に備えた蚘録媒䜓に察しお特定波長光を
照射し、該照射郚䜍の蚘録局を融解陀去せしめる
こずを特城ずするヒヌトモヌド蚘録方法を提䟛す
る。 䞊蚘構成のヒヌトモヌド蚘録媒䜓に斌お、その
コントラストは䞻に蚘録局䞭の金属性薄局によ぀
お巊右され、他方、感床、解像力及び匷床の性胜
は、前蚘金属性薄局及び非金属薄局の組合せによ
぀お巊右される。本発明者の知芋によれば、特に
感床に関しおは前蚘局、即ち、金属性薄局、非
金属薄局の各々を単独で蚘録局ずする堎合に比し
お、䞡者を適切に積局したものを蚘録局ずし、こ
れに特定波長光を照射するこずにより倧巟な感床
の増倧が期埅できる蚘録方法ずなるこずが刀明し
おいる。 たた、特に本発明に甚いる蚘録媒䜓の非金属薄
局の気化熱は、金属性薄局に比べお同皋床か又は
小さくな぀おおり、その結果、非金属薄局自䜓も
熱的に陀去され易いため、光照射の光゚ネルギヌ
を吞収しお金属性薄局が融解陀去されるのを非金
属薄局が過床に劚げずにすみ、高感床な蚘録を実
珟できるものである。 本発明に甚いる蚘録媒䜓の金属性薄局は䜎気化
熱の玠材で圢成されるのが望たしく、曎に又、安
定な薄膜を圢成し埗、金属光沢を瀺す即ち、倧
きい光吞収系数を有する金属、半金属であり、
䞔぀、その単䜍䜓積圓りの気化熱が10Kcalcm3
以䞋、望たしくは5Kcalcm3以䞋、最適には
3Kcalcm3以䞋の玠材から遞ばれるのがよい。 具䜓的には䞋衚衚に䟋瀺する元玠から遞
択される。なお、それら元玠の皮以䞊から成る
合金、或いはそれ等の元玠の安定性、気化熱、毒
性等の諞特性を悪化せしめない範囲で曎に他元玠
を添加した合金を甚いおもよい。
The present invention relates to a heat mode recording method. In heat mode, a laser beam that is intensity modulated and scanned or deflected is focused on a high power density spot and irradiated onto the recording medium to selectively melt, evaporate, remove, or deform a portion of the recording medium to perform recording. Laser beam recording is known as a new recording method with many advantages. In other words, it is a real-time recording that does not require post-processing such as heat development and fixing, and does not require processing liquids, can form images with extremely high resolution and high contrast, and the recording medium is not exposed to room light and does not require darkroom operation. One thing is that it is suitable for recording electrical signals such as computer output and transmitted time series signals, and it is possible to add information later.
It has the following advantages and can be applied to micro images, ultra-micro images, COM, micro facsimile, phototypesetting original plates, etc., and has the potential to contribute to miniaturization of devices, advancement of functions, and improvement of image quality. It is considered that there is enough. However, at present, heat mode laser beam recording is technically incomplete and has not yet achieved sufficient practicality. For example, with regard to recording media, it cannot be said that they have reached a level that satisfies all aspects such as sensitivity, resolution, and strength. Furthermore, regarding lasers, which are closely related to recording media, especially the sensitivity of recording media, there are almost no lasers that can completely cover the performance of recording media in terms of output, stability, device size, etc. Specifically, for example, a recording medium using a metal rhodium sputter film is known, but while this is extremely strong and durable, it has low sensitivity and requires a large, water-cooled laser with high output. There is a disadvantage. Recording media using dispersed coatings of non-metallic powders such as carbon powder are also known, but these have insufficient sensitivity and particularly poor resolution, making them unsuitable for micro-image applications. Films using a semimetal bismuth evaporated film are currently the most sensitive films known, but their film strength is extremely weak and they are not practical as they are. Some non-metal evaporated films have higher sensitivity and higher resolution than bismuth, but even in recording media using these, the laser wavelength that can be used in relation to the absorption spectrum is relatively short. things, e.g.
It is limited to He-Cd, Ar ion lasers, etc., and depending on the purpose, it may be unsuitable for practical use due to the stability of the laser, the size of the device, the price, etc., and at the same time, it has the drawback that it is difficult to obtain high contrast. Typical of these are a series of inorganic substances called chalcogenides. As for lasers, He--Ne lasers are stable and have a long lifespan, but generally have low output, while He-Cd lasers have unstable outputs that are greatly affected by temperature and have a short lifespan. Ar ion laser,
Although Nd:YAG lasers have high output, the overall size of the device including the cooling device, power supply, etc. is large and expensive, and sufficient consideration must be given to safety when handling these high output lasers. There are many points that are not practical. Considering the various problems related to the current lasers and the recording media used for them as described above, especially in this recording field, it is necessary to use lasers with high sensitivity, high resolution, high contrast, high intensity, and long wavelengths. It is understood that there is a strong desire to develop an improved recording medium that can sufficiently absorb laser beams of
The present invention provides a highly practical heat mode recording method that satisfies the above requirements. That is, in more detail, the recording layer is formed so that the reflectance of the entire recording layer to light of a specific wavelength is at least 1/2 or less as compared to the reflectance of the thin metallic layer alone to light of the specific wavelength,
and irradiating a recording medium with a specific wavelength light on a support, the recording layer comprising a laminated metal thin layer having a heat of vaporization that is the same or smaller than that of the metal thin layer, A heat mode recording method is provided, characterized in that the recording layer at the irradiated area is melted and removed. In the heat mode recording medium having the above structure, the contrast is mainly determined by the metallic thin layer in the recording layer, while the sensitivity, resolution and strength performance are affected by the metallic thin layer and the non-metallic thin layer. It depends on the combination of layers. According to the findings of the present inventors, especially regarding sensitivity, compared to the case where each of the above two layers, i.e., the metallic thin layer and the non-metallic thin layer, is used alone as a recording layer, a layer in which the two layers are laminated appropriately It has been found that a recording method in which a large increase in sensitivity can be expected can be achieved by using a recording layer as a recording layer and irradiating this with light of a specific wavelength. In addition, the heat of vaporization of the thin non-metal layer of the recording medium used in the present invention is approximately the same or lower than that of the thin metal layer, and as a result, the thin non-metal layer itself is easily removed thermally. Therefore, the non-metallic thin layer does not excessively impede the melting and removal of the metallic thin layer by absorbing the optical energy of the light irradiation, making it possible to realize highly sensitive recording. The thin metallic layer of the recording medium used in the present invention is preferably formed of a material with a low heat of vaporization, and furthermore, can form a stable thin film and exhibits metallic luster (i.e., has a large light absorption coefficient). metal, metalloid,
Moreover, the heat of vaporization per unit volume is 10Kcal/cm 3
Below, preferably 5Kcal/cm 3 or less, optimally
It is best to choose from materials with 3Kcal/cm3 or less . Specifically, it is selected from the elements listed in the table below. An alloy consisting of two or more of these elements, or an alloy to which other elements are added within a range that does not deteriorate the stability, heat of vaporization, toxicity, etc. of the elements may also be used.

【衚】【table】

【衚】 該金属性薄局は真空蒞着又は、スパツタヌによ
り容易に薄膜化しお埗られ、本発明に斌おその膜
厚は、50〜5000Å、奜たしくは100〜1000Å、最
適には300〜800Åの範囲ずする。䞊蚘膜厚範囲内
で、金属性薄局単独で光孊濃床以䞊、曎には光
孊濃床以䞊の高コントラストを達成するのは容
易である。 なお、膜厚が薄過ぎるずコントラストが埗難い
し、逆に厚過ぎるず倧きい蚘録゚ネルギヌを必芁
ずするこずになる。ずころで金属性局単独を蚘録
局ずする䞍利は䞋蚘の点にある。即ち、或皮のも
のは膜匷床が匱く、又すべおのものは反射率が高
い為に入射゚ネルギヌの半分以䞋通垞1/3以䞋の
゚ネルギヌしか利甚し埗ない点にある。極端な堎
合には1/10以䞋の゚ネルギヌしか利甚できず9/10
以䞊の反射損倱ずする。埓぀お、倧半の材料は、
吞収゚ネルギヌをロスし、その為に芋掛け䞊䜎感
床材料ずな぀おいる。即ちヒヌトモヌドの蚘録材
料の感床は蚘録局に有効に吞収される゚ネルギ
ヌ、単䜍䜓積圓りの気化熱、薄膜の厚さ、
熱䌝導による支持䜓ぞの熱拡散、の四぀の因子に
よ぀お殆んど決定されるず考えられる熱䌝導によ
぀お倱われる゚ネルギヌは時間に䟝存する為に倧
きな盞反則䞍軌を有しおおり、入射パワヌ密床が
高ければ芋掛けの感床はそれに察応しお高くなる
ものである。埓぀お吞収゚ネルギヌの増加は単に
それだけの効果にずゞたらず盞反則䞍軌に䟝る高
感床化ずの盞乗効果に䟝぀お感床は栌段に増加す
る事が、䞊蚘の劂き理論的根拠からも説明でき
る。 非金属薄局に甚いる材料は以䞋の諞条件を満足
するものでなければならない。 (1) 安定な匷い厚さ1Ό以䞋の薄膜ずしお容易に
圢成できるこず、 (2) 金属性薄局ず反応しおその為に蚘録局が倉質
する事がないこず、 (3) 金属性薄局に比べお同皋床か又は小さい気化
熱を有する事、 (4) 金属性薄局ず積局した堎合、膜厚を適圓にず
る事に䟝぀お特定波長に察する蚘録媒䜓の衚面
反射率を金属性薄局単独の堎合の1/2以䞋奜適
には1/3以䞋曎に奜適には1/10以䞋に䜎枛でき
る事〔その為には前蚘特定波長に察する吞収が
比范的少い事が必芁ず考えられる〕 (5) 䜿甚方法にも䟝るが、無公害又は䜎公害材料
であるべきこず、 以䞊の条件を満足する材料は䞻ずしお金属の酞
化物、同北化物又はいわゆるカルコゲナむド物質
である。その他有機物も利甚出来るが1Ό以䞋の
均䞀な膜厚で安定に成膜化出来るかどうかがその
遞択の基準ずなる。䟋えば䜎真空蒞発で沈積させ
るポリパラシリレン薄膜、真空蒞着による゚ポキ
シ暹脂、フツ玠暹脂等の薄膜、溶剀を甚いおスピ
ンナヌ塗垃し埗る劂き各皮高分子薄膜などはこの
条件を満足するので甚い埗る。 膜厚の制限は条件(3)ずも関連し、蚘録媒䜓の高
感床化に欠かせない条件である。即ち金属性薄局
がレヌザヌビヌムの゚ネルギヌを吞収しお加熱さ
れ沞点に達し、䞔぀気化熱を埗お蒞発する段階に
おいおは、非金属薄局はその蒞発を匷く劚げない
事が必芁で、その為には金属性薄局の気化熱に比
しお少くずも同皋床、望たしくはそれよりはるか
に小さい゚ネルギヌで融解するか気化する必芁が
ある。即ち融点ずしおは1000℃以䞋、奜適には
800℃以䞋がよい。融解すれば液状ずなり金属性
薄局の爆発的な蒞発に䌎぀お容易に飛散せしめら
れるので、融解すれば充分であり、䞀般的に云぀
お昇枩゚ネルギヌ、融解熱などは気化熱に比范し
お小さく、無芖できるのである。䜆し、その為に
は膜厚ができるだけ薄い事が望たしく、1Ό以䞋
奜適には0.5Ό以䞋が望たしい。膜厚は条件(4)に䟝
぀お桁以䞊、望たしくは桁以䞊の粟床で制埡
され、所望の厚さに圢成されねばならない。その
理由は、恐らくは薄膜の干枉効果により反射率䜎
枛がもたらされおいる為ず芋られる。埌述の実斜
䟋或いはそれに関連した実隓デヌタヌに基づいお
も、そのこずは明らかにされた。 条件(4)における1/2以䞋の反射率は高感床化の
効果が実質的に生ずる為に必芁である。倚くの金
属性薄局は90以䞊の衚面反射率を有しおおり、
半金属であるBiなどは、やゝ䜎いが70以䞊の
反射率を有する。衚面反射率をこの1/2以䞋に抑
える事は吞収゚ネルギヌを少くずも1.5倍以䞊に
高める効果を有し、盞反則䞍軌ずの盞乗効果を䟝
぀お少なくずも実質感床は倍以䞊に高められる
のである。 金属の酞化物及びカルコゲナむド物質の具䜓的
な䟋は皮類が倚く物性定数も未知なものが倚い為
に、個々に列挙する事ができないが、金属酞化
物、同フツ化物に関しおは䞻ずしお条件(3)が遞択
基準ずなり、他の条件はほゞ満足されるものであ
る。䟋えばPbO、WO3などは気化熱がそれぞれ
2.18、1.32Kcalcm3であ぀お甚い埗るもので
ある。その他TiO2、SiO、SiO2、ZrO2、MgF2、
CaF2なども甚いられる。カルコゲナむド物質は
融点が䜎い材料ずしお知られおおり、(3)(4)の条件
は充分に満しおいるので(2)及び(5)が遞択基準ずな
る。カルコゲナむド物質は光又は熱の䜜甚に䟝぀
おAg・Cuなどの金属ず反応する事が知られおお
り、埓぀おカルコゲナむド物質を䜿甚する堎合に
は金属性薄局の材料がAg・Cu以倖の材料でなけ
ればならない。他の材料䞭にも、皋床はわずかで
あるがカルコゲナむド物質ず反応するものがあ
る。その際、反応を極少に抑え蚘録局を安定に保
぀必芁䞊䞡者の組合せを適圓に遞ぶ必芁がある。 カルコゲナむド物質ずは、カルコゲン元玠即ち
、Se、Teを含む化合物であり、広矩には、
Se、Te単䜓をも含む倚皮類の材料矀を称するも
のである。特に組成は連続的に倉化せしめ埗る為
無限の皮類が存圚するものである。代衚的なもの
はカルコゲン元玠以倖にAs、Sb、、Ge、Si、
Tl、その他の金属、ハロゲン元玠の䞭から遞択
される材料を単皮又は耇数皮含んでいる。しかし
条件(5)を考慮した堎合には、カルコゲン元玠ずし
おは、これず化合物を圢成すべき材料ずしお
は、Ge、In、Sn、Cu、Ag、Fe、Bi、Al、Si、
Zn、、などの金属、半金属或いは半導䜓が良
く特に、薄膜ずしお奜たしいものは、Ge、In、
Sn、Cu、Ag、の単独又は耇数皮を含むカルコゲ
ナむド物質である。 以䞋、本発明に甚いる蚘録媒䜓の構成及び、蚘
録プロセスを添付図面を参照し぀぀、曎に詳述す
る。 第図〜第図に本発明に甚いるヒヌトモ
ヌド蚘録媒䜓の各皮態様を䟋瀺しおある。 図䞭は支持䜓で、ガラス、フむルム、玙、金
属などが甚いられる。特にフむルムずしおはポリ
゚ステル、アセテヌト、ビニル、ポリ゚チレンな
どの有機高分子フむルムが甚いられる。支持䜓偎
から蚘録のために光を照射する堎合には支持䜓は
透明なものに限られる。支持䜓に光拡散性のもの
を甚い、蚘録光照射を支持䜓ずは反察偎から行な
い、読出しを支持䜓偎からの照明で行なう堎合に
は支持䜓は光拡散性でも良い。 は金属性薄局、は非金属薄局、は蚘録の
為に照射さる光で通垞レヌザヌビヌムが甚いられ
る。甚いられる代衚的なレヌザヌずその波長を衚
に瀺した。
[Table] The thin metal layer can be easily formed into a thin film by vacuum evaporation or sputtering, and in the present invention, the film thickness is 50 to 5000 Å, preferably 100 to 1000 Å, and most preferably 300 to 800 Å. range. Within the above film thickness range, it is easy to achieve high contrast with an optical density of 1 or higher, or even 2 or higher, with the metallic thin layer alone. Note that if the film thickness is too thin, it will be difficult to obtain contrast, and if the film thickness is too thick, a large amount of recording energy will be required. However, the disadvantages of using only a metallic layer as a recording layer are as follows. That is, some types have weak film strength, and all types have high reflectance, so that less than half, usually less than 1/3, of the incident energy can be used. In extreme cases, less than 1/10 of the energy can be used and 9/10
The reflection loss shall be as follows. Therefore, most materials are
It loses absorbed energy, which makes it an apparently low-sensitivity material. In other words, the sensitivity of a heat mode recording material depends on the energy effectively absorbed by the recording layer, the heat of vaporization per unit volume, the thickness of the thin film,
The energy lost through thermal conduction, which is thought to be mostly determined by four factors: heat diffusion to the support due to thermal conduction, has a large reciprocity law failure because it depends on time. , the higher the incident power density, the higher the apparent sensitivity will be. Therefore, it can be explained from the above theoretical basis that the increase in absorbed energy is not only an effect on its own, but also has a synergistic effect with the increase in sensitivity due to reciprocity law failure, resulting in a significant increase in sensitivity. can. The material used for the non-metallic thin layer must satisfy the following conditions. (1) It can be easily formed as a stable, strong thin film with a thickness of 1 ÎŒm or less, (2) It does not react with the thin metal layer and cause the recording layer to change in quality, and (3) It does not react with the thin metal layer. (4) When laminated with a thin metal layer, the surface reflectance of the recording medium for a specific wavelength can be lowered by setting the film thickness appropriately. It can be reduced to 1/2 or less, preferably 1/3 or less, and even more preferably 1/10 or less. ) Depending on the method of use, materials should be non-polluting or low-polluting. Materials that satisfy the above conditions are mainly metal oxides, metal fluorides, or so-called chalcogenide substances. Other organic materials can also be used, but the criterion for selection is whether they can be stably formed into a film with a uniform thickness of 1ÎŒ or less. For example, polyparasilylene thin films deposited by low vacuum evaporation, thin films of epoxy resins or fluorine resins deposited by vacuum evaporation, and various polymer thin films that can be coated with a spinner using a solvent can be used because they satisfy this condition. The limitation on film thickness is also related to condition (3), and is an essential condition for increasing the sensitivity of recording media. In other words, at the stage where the metallic thin layer absorbs the energy of the laser beam, heats up to its boiling point, and obtains the heat of vaporization and evaporates, the non-metallic thin layer must not strongly impede the evaporation. For this purpose, it is necessary to melt or vaporize with energy at least equal to, and preferably much smaller than, the heat of vaporization of the thin metal layer. That is, the melting point is 1000℃ or less, preferably
The temperature should be below 800℃. When melted, it becomes liquid and can be easily dispersed with the explosive evaporation of the thin metal layer, so melting is sufficient, and generally speaking, the heating energy and heat of fusion are smaller than the heat of vaporization. It is small and can be ignored. However, for this purpose, it is desirable that the film thickness be as thin as possible, preferably 1ÎŒ or less, preferably 0.5ÎŒ or less. The film thickness must be controlled with an accuracy of two orders of magnitude or more, preferably three orders of magnitude or more, depending on condition (4), and must be formed to a desired thickness. The reason for this is probably that the reflectance is reduced due to the interference effect of the thin film. This was also clarified based on the Examples described later or experimental data related thereto. A reflectance of 1/2 or less in condition (4) is necessary in order to substantially produce the effect of increasing sensitivity. Many thin metallic layers have a surface reflectance of over 90%,
Bi, which is a metalloid, has a reflectance of 70% or more, although it is somewhat low. Reducing the surface reflectance to 1/2 or less has the effect of increasing the absorbed energy by at least 1.5 times, and due to the synergistic effect with reciprocity failure, the effective sensitivity can be increased by at least twice as much. . Specific examples of metal oxides and chalcogenide substances cannot be listed individually because there are many types and many physical property constants are unknown, but for metal oxides and fluorides, the following conditions are mainly used: is the selection criterion, and the other conditions are almost satisfied. For example, the heat of vaporization of PbO, WO 3 , etc.
2.18, 1.32 (Kcal/cm 3 ) and can be used. Others TiO 2 , SiO, SiO 2 , ZrO 2 , MgF 2 ,
CaF 2 and the like are also used. Chalcogenide substances are known as materials with low melting points, and since conditions (3) and (4) are fully satisfied, (2) and (5) are the selection criteria. Chalcogenide substances are known to react with metals such as Ag and Cu due to the action of light or heat. Therefore, when using chalcogenide substances, the material of the metallic thin layer must be a material other than Ag or Cu. Must. Some other materials also react to a lesser extent with chalcogenide materials. At this time, it is necessary to appropriately select a combination of the two in order to minimize the reaction and keep the recording layer stable. A chalcogenide substance is a compound containing chalcogen elements, that is, S, Se, and Te, and in a broad sense, S,
It refers to a wide variety of materials including Se and Te alone. In particular, since the composition can be continuously changed, an infinite number of types exist. In addition to chalcogen elements, typical examples include As, Sb, P, Ge, Si,
Contains one or more materials selected from Tl, other metals, and halogen elements. However, when condition (5) is considered, the chalcogen element is S, and the materials that should form compounds with it are Ge, In, Sn, Cu, Ag, Fe, Bi, Al, Si,
Metals, semimetals, or semiconductors such as Zn, V, etc. are particularly preferred as thin films, and Ge, In,
A chalcogenide substance containing one or more of Sn, Cu, and Ag. Hereinafter, the configuration of the recording medium used in the present invention and the recording process will be explained in further detail with reference to the accompanying drawings. 1a to 5a illustrate various embodiments of the heat mode recording medium used in the present invention. In the figure, numeral 1 represents a support, which may be made of glass, film, paper, metal, or the like. In particular, organic polymer films such as polyester, acetate, vinyl, and polyethylene are used as the film. When irradiating light for recording from the support side, the support is limited to a transparent support. In the case where the support is light-diffusive, recording light is irradiated from the side opposite to the support, and reading is performed by illumination from the support side, the support may be light-diffusive. 2 is a metallic thin layer, 3 is a non-metallic thin layer, and 4 is light irradiated for recording, usually a laser beam. The table shows typical lasers used and their wavelengths.

【衚】【table】

【衚】 は金属衚面を保護する為の局で、基本的には
局ず同じ材料の䞭から遞択されるが、膜厚は
1Ό以䞋であれば特に厚さを制埡しお圢成する必
芁はない。厚さを制埡し反射防止効果を持たせた
堎合には第図の劂き構成ずなり、どちらの面
からも高感床な蚘録が可胜である媒䜓が埗られ
る。 は支持䜓に察する金属性薄局の附着力が充分
でない堎合に、附着力を増し、結果的に膜匷床を
高め蚘録媒䜓の耐久性を増す為に蚭けられる䞭間
局である。支持䜓がガラスや有機フむルムの堎合
には各皮暹脂を薄く塗垃しお䞭間局ずするのが良
い。゚ポキシ暹脂、シリコン暹脂、ビニル暹脂、
れラチンなどが甚いられる。 又カルコゲン物質も䞭間局ずしお奜適に甚い埗
る。䞭間局は機胜的には支持䜓の䞀郚又は蚘録局
の䞀郚のどちらかになり埗るものである。 第図〜第図には察応する蚘録媒䜓〔各
図に図瀺〕に光レヌザヌ照射した結果の蚘
録状態を瀺しおある。 照射光は䞻ずしお金属性薄局にお吞収されるが
䞀郚分は非金属性薄局にも吞収される。吞収され
た光゚ネルギヌは熱゚ネルギヌずな぀お蚘録局の
枩床を䞊昇させ、゚ネルギヌの少ない段階では蚘
録局に残存する内郚応力によ぀お昇枩郚に亀列が
生ずる。曎に゚レルギヌが増すず蚘録局は熔融状
態ずなり衚面匵力による液面の倉圢が生ずる、最
も枩床が䞊昇し沞点に達した郚分では沞隰が起る
が、珟象が短時間である為に爆発的な沞隰ずな
る。この爆発は熔融䜓を抌しのけ、はじき飛ばし
お、穎ずその呚蟺の盛り䞊りを圢成する。゚ネル
ギヌ量ず蚘録局の厚さの兌ね合いで穎の深さは支
持䜓に達したり、達しなか぀たりする。支持䜓の
衚面郚分も圱響を受けお倉化する堎合もある。画
像のコントラストの点からは穎の深さが支持䜓に
たで達するのが最も望たしい。第図〜第図
に各皮の堎合を図瀺しおあるが䟋えば第図
図瀺においお穎の深さは䞭間局の衚面に止たる時
もあり埗る。 第図に蚘録を読み出す堎
合の照明光ず受光䜓の䜍眮関係を瀺した。第
図の蚘録䜓を䟋にず぀お瀺しおあるが、その
他の堎合も同様である。同第図及びは透過
モヌドでの読出しを瀺しおある。は反
射モヌドでの読出しである。及びにおいお蚘
録局は本来特定波長に察しおは反射率が䜎くな぀
おいるが、他の波長においおは高い反射率を有し
おいる為に衚面反射でも充分にコントラストの高
い読出しが可胜である事を瀺したものである。特
にの堎合には支持䜓が光吞収局ずな぀おいる。
は裏面からの反射モヌド読出しを䟋瀺したもの
である。 以䞋に具䜓的実斜䟋を挙げお、本発明を曎に説
明する。 実斜䟋 
[Table] 5 is a layer to protect the metal surface, and is basically selected from the same materials as layer 3, but the film thickness is
If the thickness is 1Ό or less, there is no need to particularly control the thickness. When the thickness is controlled to provide an antireflection effect, a structure as shown in FIG. 5a is obtained, and a medium capable of recording with high sensitivity from either side can be obtained. Reference numeral 6 denotes an intermediate layer provided to increase the adhesion force of the thin metal layer to the support when the adhesion force is insufficient, thereby increasing the film strength and the durability of the recording medium. When the support is glass or an organic film, it is preferable to apply a thin layer of various resins to form an intermediate layer. Epoxy resin, silicone resin, vinyl resin,
Gelatin etc. are used. Chalcogen substances can also be suitably used as the intermediate layer. Functionally, the intermediate layer can be either part of the support or part of the recording layer. 1b to 5b show the recorded state as a result of irradiating light (laser) onto the corresponding recording medium (shown in each figure a). The irradiated light is mainly absorbed by the metallic thin layer, but a portion is also absorbed by the non-metallic thin layer. The absorbed light energy turns into thermal energy and raises the temperature of the recording layer, and when the energy is low, internal stress remaining in the recording layer causes a tortoise formation in the heated portion. When the energy further increases, the recording layer becomes molten and the liquid surface deforms due to surface tension. Boiling occurs at the part where the temperature rises the most and reaches the boiling point, but because the phenomenon is short-lived, explosive boiling occurs. becomes. This explosion displaces and flings the molten material, forming a hole and a bulge around it. Depending on the amount of energy and the thickness of the recording layer, the depth of the hole may or may not reach the support. The surface area of the support may also be influenced and changed. From the viewpoint of image contrast, it is most desirable for the depth of the hole to reach the support. Various cases are illustrated in Figures 1b to 5b. For example, Figure 4b
In the illustration, the depth of the hole may sometimes stop at the surface of the intermediate layer. Figures 6a, b, c, d, and e show the positional relationship between the illumination light 7 and the photoreceptor 8 when reading records. Although the recording medium of FIG. 1b is shown as an example, the same applies to other cases. FIGS. 6a and 6b show readout in transparent mode. c, d, and e are reading in reflection mode. In c and d, the recording layer originally has a low reflectance for a specific wavelength, but it has a high reflectance for other wavelengths, so reading with sufficiently high contrast is possible even with surface reflection. It shows something. Particularly in the case of d, the support is a light absorption layer.
e is an example of reflection mode readout from the back surface. The present invention will be further explained with reference to specific examples below. Example 1

【衚】【table】

【衚】 䞊蚘条件に䟝぀お埗た蚘録媒䜓の蚘録局偎の分
光党反射率を䞊蚘Bi単局ずの比范においお第
図に瀺した。䞀方分光透過率は図の波長範囲で
以䞋であ぀た。図に瀺した劂く各レヌザヌ波長
に察しお、盎接金属性局に察するよりも倍以䞊
の吞収増加が達成されおいる。 前蚘各サンプルに察しおレヌザヌ蚘録実隓を行
぀た結果を衚にたずめお瀺した。尚感床の枬定
は、第図に瀺す劂く蚘録媒䜓をタヌンテ
ヌブル䞊に取付けタヌンテヌブルをモヌタヌ
で回転させながら䞔぀テヌブル面内での盎線
移動を行ない、レヌザヌビヌムを蚘録局
面にスポツトサむズ玄3Όに集光しおスパむラル
状の蚘録を行ない倖呚郚での線速床が増しお蚘録
ができなくなる限界点から算出しお行぀た。レヌ
ザヌビヌムの集光光孊系はレヌザヌ、ビヌム
゚キスパンダヌ、ミラヌ、顕埮鏡察物レ
ンズより成り、光孊系に䟝る光損倱は可芖光
で70赀倖線で75であ぀た。衚に芋る劂く感床
の倧巟な改良がなされたが、この事は実甚䞊極め
お重芁で、これに䟝぀おヒヌトモヌド蚘録媒䜓の
COM、マむクロフむルマヌ等ぞの実甚の道が開
かれるものである。尚ヒヌトモヌド蚘録媒䜓の倧
きな盞反則䞍軌は衚に芋る劂く、感床のレヌザヌ
パワヌぞの倧きな䟝存性ずな぀お珟われおいる。
[Table] The spectral total reflectance of the recording layer side of the recording medium obtained under the above conditions is compared with the Bi single layer above.
Shown in the figure. On the other hand, the spectral transmittance is 1 in the wavelength range shown in the figure.
% or less. As shown in the figure, for each laser wavelength, an absorption increase of more than twice that for the direct metallic layer is achieved. The results of laser recording experiments performed on each of the samples are summarized in a table. To measure the sensitivity, the recording medium 15 is mounted on a turntable 16 as shown in FIG. Spiral recording was performed by condensing the light to a spot size of approximately 3 ÎŒm, and calculations were made from the limit point where the linear velocity at the outer periphery increased and recording became impossible. The laser beam focusing optical system consisted of a laser 11, a beam expander 12, a mirror 13, and a microscope objective lens 14, and the optical loss due to the optical system was 70% for visible light and 75% for infrared light. As shown in the table, a large improvement in sensitivity has been made, which is extremely important in practical terms, and it is due to this that the heat mode recording medium has been significantly improved.
This opens the way to practical applications such as COM and microfilmers. As shown in the table, the large reciprocity law failure of heat mode recording media is manifested in the large dependence of sensitivity on laser power.

【衚】 実斜䟋  実斜䟋ず同じ条件でBi局を圢成しその䞊に
䞋蚘条件でGeS2局を圢成した。
[Table] Example 2 A Bi layer was formed under the same conditions as in Example 1, and two GeS layers were formed thereon under the following conditions.

【衚】【table】

【衚】【table】

【衚】 䞊蚘に䟝぀お埗られた媒䜓の分光党反射率を䞊
蚘Bi局ずの比范においお第図に瀺した。3000
Åの膜厚でHeNeレヌザヌ光を玄80吞収しおお
り、これは盎接Bi衚面にレヌザヌ光を照射する
よりも玄2.7倍の吞収゚ネルギヌの増加にな぀お
いる。このものの感床を実斜䟋ず同様に枬定し
た結果20 He−Neレヌザヌに察しお1.5×
106ergcm2であり、Bi単独の堎合に比范しお玄
倍の感床䞊昇ずな぀おいる。尚Biの蒞着膜は衚
面匷床、接着匷床共に匱く、玙で軜くこす぀ただ
けで傷が぀き、又倚少匷くこするず支持䜓から剥
れおしたう。なお実斜䟋、においおカルコゲ
ナむド物質を衚面に蒞着したものは膜匷床が匷
く、傷も぀きにくく、極めお耐久性に富むもので
あ぀た。 実斜䟋  実斜䟋ずほゞ同じ条件で、䜆し支持䜓は80ÎŒ
の厚さのアセテヌトフむルムずし、先ず䞭間局ず
しおGeS2の玄2000Åの局を圢成した。この局は
可芖光に察しおほゞ䞀様に透明である。この䞭間
局を圢成した埌に曎に500ÅのBi、及び3000Åの
GeS2の局を同じ条件で圢成し、感床的に実斜䟋
ずほゞ同じ結果を埗た。この蚘録媒䜓の蚘録局
は接着匷床・衚面匷床共に高く実甚䞊充分な耐久
性を有しおいた。 この蚘録媒䜓を第図又はの劂き透過モヌ
ドで芳察したずころ画像コントラストは光量濃床
差で2.0であ぀た。 実斜䟋  実斜䟋ずほゞ同様の蚘録媒䜓を䜜成した。䜆
しGe50S50の局厚は1700Åであ぀た。又Ge50S50を
蒞着する際にBiの衚面に䞀郚マスクを眮き、
Ge50S50局が圢成されない郚分を蚭けた。この蚘
録媒䜓に察しお実斜䟋の堎合ず同様の感床枬定
装眮を甚い蚘録を行぀た。䜆し光源は出力10
He−Cdレヌザヌ、集光甚察物レンズは40倍の
顕埮鏡察物レンズを甚いた。タヌンテヌブルは毎
分341回転であ぀た。 その結果媒䜓䞊にはスパむラル状の線が蚘録さ
れた。感床的には最も呚速床の速い倖呚郚たで蚘
録を行う事は可胜であるが、察物レンズをデフオ
ヌカスさせ蚘録媒䜓を焊点から僅かはずしお蚘録
を行぀たずころ、Bi単局ずGe50S50局ずの積局で
ある蚘録局の差を顕埮鏡芳察に䟝぀お明確に把握
できた。即ち内呚郚でBi露出郚ずGe50S50局を有
する郚分の境界を芋たずころ、どちらの郚分にも
線が蚘録されおいたがBi䞊の蚘録線は線巟が䞀
定せず、䞔぀線゚ツヂがガサ぀いおいた。䞀方
Ge50S50局を蚭けた郚分では線巟がBi䞊より倪く
䞀定で䞔぀線゚ツヂが非垞にシダヌプであ぀た。
倖呚郚の方においおはその傟向は曎に著しく、最
も倖呚郚においおはBi䞊には蚘録が行われおい
ないのに察しおGe50S50局を蚭けた郚分には鮮明
な線が蚘録されおいた。以䞊埗られた結果に䟝り
本発明の蚘録方法が高感床性は勿論の事高解像力
性、画質の良奜性の点に぀いおも優れおいるこず
が明らかずな぀た。 実斜䟋  次の条件で蚘録媒䜓を圢成した。
[Table] Figure 8 shows the spectral total reflectance of the medium obtained above in comparison with the Bi layer. 3000
Approximately 80% of HeNe laser light is absorbed with a film thickness of Å, which is approximately 2.7 times more absorbed energy than directly irradiating the Bi surface with laser light. The sensitivity of this product was measured in the same manner as in Example 1, and the result was 1.5× for a 20 mW He-Ne laser.
10 6 erg/cm 2 , which is about 4 erg/cm 2 compared to Bi alone.
The sensitivity has increased twice as much. Incidentally, the deposited film of Bi has low surface strength and adhesive strength, and will be scratched by just lightly rubbing it with paper, and will peel off from the support if rubbed a little too forcefully. In addition, in Examples 1 and 2, the films in which chalcogenide substances were vapor-deposited on the surface had strong film strength, were resistant to scratches, and were extremely durable. Example 3 Almost the same conditions as Example 2, except that the support was 80Ό
An acetate film with a thickness of about 2000 Å was first formed as an intermediate layer of GeS 2 . This layer is substantially uniformly transparent to visible light. After forming this intermediate layer, add another 500 Å of Bi and 3000 Å of Bi.
A layer of GeS 2 was formed under the same conditions, and almost the same results as in Example 2 were obtained in terms of sensitivity. The recording layer of this recording medium had high adhesive strength and surface strength and had sufficient durability for practical use. When this recording medium was observed in a transmission mode as shown in FIG. 6a or 6, the image contrast was 2.0 in terms of light intensity difference. Example 4 A recording medium substantially similar to that in Example 1 was produced. However, the layer thickness of Ge 50 S 50 was 1700 Å. Also, when depositing Ge 50 S 50 , a mask was partially placed on the Bi surface.
A portion was provided where the Ge 50 S 50 layer was not formed. Recording was performed on this recording medium using the same sensitivity measuring device as in Example 1. However, the light source has an output of 10mW.
A 40x microscope objective lens was used for the He-Cd laser and the focusing objective lens. The turntable was rotating at 341 revolutions per minute. As a result, a spiral line was recorded on the medium. In terms of sensitivity, it is possible to record up to the outer periphery where the circumferential speed is fastest, but when recording was performed with the objective lens defocused and the recording medium slightly out of focus, it was possible to record between a Bi single layer and a Ge 50 S 50 layer. The difference in the recording layer, which is a stack of layers, could be clearly understood through microscopic observation. In other words, when looking at the boundary between the exposed Bi part and the part with the Ge 50 S 50 layer at the inner circumference, lines were recorded in both parts, but the line width of the recorded lines on Bi was not constant, and The line edges were rough. on the other hand
In the area where 50 Ge 50 S 50 layers were provided, the line width was thicker and more constant than on the Bi layer, and the line edge was very sharp.
This tendency is even more remarkable at the outer periphery; at the outermost periphery, no recording was made on Bi, whereas a clear line was recorded on the area where 50 Ge 50 S layers were provided. . From the results obtained above, it has become clear that the recording method of the present invention is superior not only in high sensitivity but also in high resolution and good image quality. Example 5 A recording medium was formed under the following conditions.

【衚】 䞊蚘に䟝぀お埗られた蚘録局の分光党反射率を
䞊蚘Au局ずの比范においお第図に瀺した。He
−Neレヌザヌの波長に察しおレヌザヌビヌムに
察する吞収量は玄17倍、感床は玄50倍ずな぀た。
Au蒞着膜は剥れやすく又傷が぀き易い事はよく
知られおいるがGe50S50を積局したものは傷が぀
きにくゝ、䞈倫な膜であ぀た。 実斜䟋  実斜䟋のAuの代りにIn、Sn、Znを蒞着条件
の倚少の差はあるが容易に玄800Åの局ずしお圢
成する事ができ、同様にGe50S50を適甚しお良奜
な結果を埗た。 実斜䟋  電子ビヌム蒞着によりSi及びRhの局を圢成し
た。
[Table] The spectral total reflectance of the recording layer obtained as described above is shown in FIG. 9 in comparison with the above Au layer. He
The absorption amount for the laser beam was approximately 17 times greater than the wavelength of the -Ne laser, and the sensitivity was approximately 50 times greater.
It is well known that Au vapor-deposited films are easily peeled off and scratched, but the Ge 50 S 50 laminated film was durable and resistant to scratches. Example 6 In, Sn, and Zn can be easily formed as a layer of about 800 Å in place of Au in Example 5, although there are some differences in the deposition conditions. I got good results. Example 7 Si and Rh layers were formed by electron beam evaporation.

【衚】 䞊蚘材料はスパツタヌで局圢成するこずもでき
た。 䞊蚘局に察しお実斜䟋ず同様にGeS2局を積
局し、〜10倍の感床増加を埗た。 実斜䟋  各皮金属性局の䞊にカルコゲン物質ずしお
Ge2S3、Sn12Ge25S63、Sn16Ge17S67、Sn25Ge7S68、
Sn7Ge16S77、In14Ge29S57、In20Ge20S60、
In30Ge10S60、In10Ge20S70、Ag25Ge25S50、
Ag33Ge17S50、Ag10Ge35S55、Ag20Ge15S65、
Ag5Ge23S72、Cu14Ge29S57、Cu33Ge17S50、の局を
実斜䟋又はにおけるカルコゲン物質の蒞着条
件ず倧差ない条件で1000〜5000Åの厚さに積局圢
成し、各皮レヌザヌ波長の適甚に奜適な蚘録媒䜓
が埗られた。䜆し䞉次元化合物の蒞着はフラツシ
ナ蒞着法に䟝぀た。 実斜䟋  実斜䟋におけるBi局及び実斜䟋における
Au局の䞊に次の条件でWO3の局を圢成した。
[Table] The above materials could also be layered by sputtering. Two GeS layers were laminated on the above layer in the same manner as in Example 2 , and an increase in sensitivity of 3 to 10 times was obtained. Example 8 As a chalcogen substance on various metallic layers
Ge 2 S 3 , Sn 12 Ge 25 S 63 , Sn 16 Ge 17 S 67 , Sn 25 Ge 7 S 68 ,
Sn 7 Ge 16 S 77 , In 14 Ge 29 S 57 , In 20 Ge 20 S 60 ,
In 30 Ge 10 S 60 , In 10 Ge 20 S 70 , Ag 25 Ge 25 S 50 ,
Ag 33 Ge 17 S 50 , Ag 10 Ge 35 S 55 , Ag 20 Ge 15 S 65 ,
A layer of Ag 5 Ge 23 S 72 , Cu 14 Ge 29 S 57 , Cu 33 Ge 17 S 50 was formed to a thickness of 1000 to 5000 Å under conditions not much different from the deposition conditions of the chalcogen substance in Example 1 or 2. A recording medium suitable for use with various laser wavelengths was obtained. However, the three-dimensional compound was deposited using a flash deposition method. Example 9 Bi layer in Example 1 and Example 5
A layer of WO 3 was formed on the Au layer under the following conditions.

【衚】 䞊蚘各蚘録局に察する枬定結果を単局の堎合の
比范に斌おたずめお衚に瀺した。
[Table] The measurement results for each of the above-mentioned recording layers are summarized in the table for comparison in the case of a single layer.

【衚】【table】 【図面の簡単な説明】[Brief explanation of drawings]

第図、第図、第図、第図、第
図は本発明に甚いるヒヌトモヌド蚘録媒䜓の
各皮態様を䟋瀺する暡匏図、第図、第図
、第図、第図、第図は前蚘第図
、第図、第図、第図、第図に
図瀺した各蚘録媒䜓にレヌザヌ蚘録を行぀た結果
を䟋瀺する暡匏図である。第図
はレヌザヌ蚘録埌の蚘録媒䜓の読出し䟋を
瀺した説明図である。第図、第図、第図は
本発明に甚いた蚘録媒䜓の分光党反射率を瀺した
グラフである。第図は、本発明に甚いる蚘録
媒䜓の感床枬定方法の抂略を説明する図である。   支持䜓、  金属性薄局、  非金
属薄局、  蚘録甚光レヌザヌ、  保
護局、  䞭間局。
FIGS. 1a, 2a, 3a, 4a, and 5a are schematic diagrams illustrating various aspects of the heat mode recording medium used in the present invention, and FIGS. 1b and 2 b, FIG. 3b, FIG. 4b, and FIG. 5b are laser beams applied to each recording medium shown in FIG. 1a, FIG. FIG. 3 is a schematic diagram illustrating the results of recording. Figure 6 a, b, c,
d and e are explanatory diagrams showing examples of reading from a recording medium after laser recording. FIG. 7, FIG. 8, and FIG. 9 are graphs showing the spectral total reflectance of the recording medium used in the present invention. FIG. 10 is a diagram illustrating an outline of a method for measuring the sensitivity of a recording medium used in the present invention. DESCRIPTION OF SYMBOLS 1...Support, 2...Metal thin layer, 3...Nonmetal thin layer, 4...Recording light (laser), 5...Protective layer, 6...Intermediate layer.

Claims (1)

【特蚱請求の範囲】[Claims]  金属性薄局および照射光の反射率を防止し、
䞔぀金属性薄局に比べお同皋床か小さい気化熱の
非金属薄局を積局しお成る蚘録局を支持䜓に備え
た蚘録媒䜓に、蚘録局党䜓の反射率が金属性薄局
単独の反射率に比べお少なくずも1/2以䞋になる
波長の光を照射しお該照射郚䜍の蚘録局を融解陀
去するこずを特城ずするヒヌトモヌド蚘録方法。
1 Preventing the reflectance of metallic thin layer and irradiation light,
In addition, in a recording medium having a recording layer on a support formed by laminating non-metallic thin layers having a heat of vaporization that is the same or lower than that of the metallic thin layer, the reflectance of the entire recording layer is equal to or less than that of the metallic thin layer alone. 1. A heat mode recording method, characterized in that the recording layer at the irradiated area is melted and removed by irradiating light with a wavelength that is at least 1/2 or less compared to the irradiation rate.
JP59030079A 1984-02-20 1984-02-20 Heat-mode recording method Granted JPS59162093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59030079A JPS59162093A (en) 1984-02-20 1984-02-20 Heat-mode recording method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59030079A JPS59162093A (en) 1984-02-20 1984-02-20 Heat-mode recording method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49059215A Division JPS5934519B2 (en) 1974-05-25 1974-05-25 Heat mode recording medium

Publications (2)

Publication Number Publication Date
JPS59162093A JPS59162093A (en) 1984-09-12
JPH0477674B2 true JPH0477674B2 (en) 1992-12-09

Family

ID=12293788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59030079A Granted JPS59162093A (en) 1984-02-20 1984-02-20 Heat-mode recording method

Country Status (1)

Country Link
JP (1) JPS59162093A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2809856B1 (en) * 2000-05-30 2002-07-12 Commissariat Energie Atomique IRREVERSIBLE OPTICAL RECORDING MEDIA

Also Published As

Publication number Publication date
JPS59162093A (en) 1984-09-12

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