JPH0478032B2 - - Google Patents
Info
- Publication number
- JPH0478032B2 JPH0478032B2 JP58003976A JP397683A JPH0478032B2 JP H0478032 B2 JPH0478032 B2 JP H0478032B2 JP 58003976 A JP58003976 A JP 58003976A JP 397683 A JP397683 A JP 397683A JP H0478032 B2 JPH0478032 B2 JP H0478032B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- resistance
- striped
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/148—Shapes of potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
この発明は感光半導体装置、とくにスポツト状
の照射光、いわゆる光点の一次元的な位置検出を
行うことの可能な感光半導体装置に関し、内部抵
抗の制御と受光感度の向上を可能にするものであ
る。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a photosensitive semiconductor device, and particularly to a photosensitive semiconductor device capable of detecting the one-dimensional position of a spot-like irradiation light, so-called a light spot. This makes it possible to improve control and light-receiving sensitivity.
従来例の構成とその問題点
pn接合を有する感光半導体装置において、同
感光半導体装置の受光面に照射された光点の照射
位置を、受光面の両端に設けられた２つの電極か
らの光電流の差により検出する方式がある。Structure of conventional example and its problems In a photosensitive semiconductor device having a pn junction, the irradiation position of a light spot irradiated on the light receiving surface of the photosensitive semiconductor device is determined by photocurrent from two electrodes provided at both ends of the light receiving surface. There is a method of detection based on the difference in
この装置は、第１図ａに示すように、所定導電
形、たとえばｎ形の半導体基板１上に、真性半導
体あるいはｎ形の高抵抗領域２があり、この表面
部分に反対導電形のｐ型領域３を設けた感光半導
体装置、いわゆるpin構造のフオトダイオードで
あり、その表面のパターンが第１図ｂに示される
ように受光領域（ｐ型領域）３が長方形を成し、
同領域の一対の各短辺およびｎ形半導体基板１の
裏面に、それぞれ、オーミツクコンタクト電極
４，４′および同５が形成されているものである。
このｐ形領域３を低濃度でかつ浅い層に形成する
と、同ｐ形領域の表面に設けられた一対の各電極
４，４′間には大きな抵抗成分RSが生じる。い
ま、このｐ形領域３のある点ｘにスポツト光を照
射すると、この照射光の吸収によつて発生した電
子−正孔対のうち、電子はｎ形基板１に、正孔は
ｐ形領域３に、それぞれ、流れ込むが、点ｘで流
れ込んだ正孔はｐ形領域３内を通つて両端の各電
極４，４′に至る。このとき、ｐ形領域３の抵抗
が大きいので、この正孔電流によつてｐ形領域３
内に電位差を生ずる。この様子は第２図に示した
ポテンシヨンメータによつて等価的に表示でき
る。したがつて２つの負荷抵抗RLに生じた電圧
VA，VBから
VB−VA／VB＋VA＝
ｌ−2x／ｌ・RS／RS＋2RL
（但し、ｌは電極４，４′間距離、RSはＡ，Ｂ点
（電極４，４′に対応）間の抵抗値である。）の関
係によつて光点の照射位置ｘを求めることができ
る。実際にこの感光半導体装置を駆動するには、
演算増幅器を用いて、RL＝０の状態を実現する
ことができるが、有限の大きさの負荷抵抗RLを
用いた場合も考慮すると、実用上、この抵抗値
RSをある程度の大きさにする必要がある。 As shown in FIG. 1A, this device has an intrinsic semiconductor or n-type high resistance region 2 on a semiconductor substrate 1 of a predetermined conductivity type, for example, n-type, and a p-type of the opposite conductivity type on this surface portion. The photosensitive semiconductor device provided with a region 3 is a so-called pin structure photodiode, and the pattern on its surface is such that the light receiving region (p-type region) 3 forms a rectangle as shown in FIG.
Ohmic contact electrodes 4, 4' and 5 are formed on each pair of short sides of the same region and on the back surface of n-type semiconductor substrate 1, respectively.
When this p-type region 3 is formed in a shallow layer with low concentration, a large resistance component R S is generated between each pair of electrodes 4 and 4' provided on the surface of the p-type region. Now, when spot light is irradiated to a certain point x in this p-type region 3, of the electron-hole pairs generated by absorption of this irradiated light, the electrons are directed to the n-type substrate 1, and the holes are directed to the p-type region. However, the holes flowing at point x pass through the p-type region 3 and reach the electrodes 4 and 4' at both ends. At this time, since the resistance of the p-type region 3 is large, this hole current causes the p-type region 3 to
A potential difference is created between the two. This situation can be equivalently displayed using the potentiometer shown in FIG. Therefore, the voltage generated across the two load resistors R L
From V A and V B , V B -V A /V B +V A = l-2x/l・R S /R S +2R L (where, l is the distance between electrodes 4 and 4', and R S is the point A, B The irradiation position x of the light spot can be determined from the relationship (resistance value between the electrodes 4 and 4'). To actually drive this photosensitive semiconductor device,
Using an operational amplifier, it is possible to realize the state of R L = 0, but if we also consider the case where a finite load resistance R L is used, in practice this resistance value
It is necessary to make R S a certain size.
従来、この抵抗値RSを大きくするためには、
イオン注入によつて低ドーズの不純物をドーピン
グすることにより、高抵抗のｐ形領域３を形成し
ていた。しかし、ドーズ量を減少させると広い面
積の領域３全体に低濃度の不純物導入が困難とな
り、しかも、表面濃度が低下して抵抗値の制御が
困難になるばかりでなく、表面の汚染によつて表
面反転層ができて、ｐ形領域３の抵抗値RSが経
時変化を起こすこともあつた。 Conventionally, in order to increase this resistance value R S ,
The high resistance p-type region 3 was formed by doping with a low dose of impurity by ion implantation. However, if the dose is reduced, it becomes difficult to introduce low-concentration impurities into the entire wide-area region 3, and the surface concentration decreases, making it difficult to control the resistance value. A surface inversion layer was formed, and the resistance value R S of the p-type region 3 sometimes changed over time.
発明の目的
この発明は上記問題点を除去できる感光半導体
装置を提供するものである。OBJECTS OF THE INVENTION The present invention provides a photosensitive semiconductor device that can eliminate the above-mentioned problems.
発明の構成
本発明は、所定導電形の半導体基板上に、同基
板と同一導電形の高抵抗領域もしくは真性半導体
領域を有し、前記高抵抗領域もしくは真性半導体
領域の表面に、前記半導体基板とは反対導電形
で、互いに平行して配設された細条の、いわゆる
縞状抵抗領域を多数有する受光部および前記各縞
状抵抗領域が相互に並列接続され、前記受光部に
入射された光点からの光電流を検出するための一
対の検出電極をそなえた感光半導体装置であり、
これにより、安定で、しかも製造容易な装置が実
現できる。Composition of the Invention The present invention has a high resistance region or an intrinsic semiconductor region of the same conductivity type as the substrate on a semiconductor substrate of a predetermined conductivity type, and a surface of the high resistance region or the intrinsic semiconductor region has the same conductivity as the semiconductor substrate. is of opposite conductivity type and has a large number of so-called striped resistance regions arranged parallel to each other, and each of the striped resistance regions is connected in parallel to each other, and the light incident on the light receiving section is A photosensitive semiconductor device equipped with a pair of detection electrodes for detecting photocurrent from a point,
This makes it possible to realize a device that is stable and easy to manufacture.
実施例の説明
第３図は、この発明の一実施例である感光半導
体装置を示す断面図ａおよび平面図ｂであり、同
図において、１１はｎ形半導体基板、１２は真性
半導体もしくは高抵抗のｎ形半導体、１３は、前
記真性半導体もとくは高抵抗のｎ形半導体１２の
表面に拡散またはイオン注入により形成された、
縞状ｐ形抵抗領域であり、１４は、この縞状ｐ形
抵抗領域１３を並列接続せしめるために設けられ
た、ｐ形領域であり、電極１５のためのコンタク
ト領域を兼ねる。１６はｎ形半導体基板１１の裏
側の電極である。DESCRIPTION OF EMBODIMENTS FIG. 3 is a cross-sectional view a and a plan view b showing a photosensitive semiconductor device according to an embodiment of the present invention, in which 11 is an n-type semiconductor substrate, 12 is an intrinsic semiconductor or high resistance The n-type semiconductor 13 is formed on the surface of the intrinsic semiconductor, particularly the high-resistance n-type semiconductor 12, by diffusion or ion implantation.
A striped p-type resistance region 14 is a p-type region provided to connect the striped p-type resistance regions 13 in parallel, and also serves as a contact region for the electrode 15. 16 is an electrode on the back side of the n-type semiconductor substrate 11.
この半導体装置を形成するにあたり、内部の高
抵抗のｎ形領域１２として、比抵抗1000Ω−cmの
ｎ形シリコンウエーハを用い、このシリコンウエ
ーハの裏面に、5μｍの深さに燐を拡散して、表
面濃度1019cm-3のｎ形領域１１を形成し、他方、
上記シリコンウエーハの表面には、第３図ｂに示
すように、幅１mm、長さ２mmの長方形の領域に、
この領域の長辺に平行な細い幅の縞状のｐ形抵抗
領域１３を複数条に分離して形成する。即ち、縞
の幅を10μｍ、縞のピツチを50μｍ、したがつて、
縞の間隔を40μｍとして、各縞状のｐ形領域１３
は、ドーズ量2.0×1012cm-2のボロンをイオン注入
して、表面濃度3.3×101６cm-3、接合深さ0.6μｍ
となして、これにより、多数の細条、いわゆる縞
状のｐ形領域１３を形成した。そして、これら縞
状のｐ形抵抗領域１３の両端には、それぞれ、コ
ンタクト用のｐ形領域１４および電極１５を設け
る。このとき、ｐ形抵抗領域１３の電極間の抵抗
値は100±20KΩであつた。なお、この縞状のｐ
形抵抗領域１３の従来装置と対比すると、従来装
置のような長方形の領域全面をｐ形にドーピング
する場合、同じ抵抗値を得るためにドーズ量を
0.7×1012cm-2に低下させなければならないので、
このような低ドーズ量制御のむつかしさから、抵
抗値のバラツキが大きくなり、抵抗値も140±
60KΩになり、所望の設定値を安定に実現するこ
とが困難である。この事例からみても、本実施例
では抵抗の制御が容易である。 In forming this semiconductor device, an n-type silicon wafer with a specific resistance of 1000 Ω-cm was used as the internal high-resistance n-type region 12, and phosphorus was diffused to a depth of 5 μm on the back surface of this silicon wafer. forming an n-type region 11 with a surface concentration of 10 19 cm -3 ;
As shown in FIG. 3b, on the surface of the silicon wafer, a rectangular area with a width of 1 mm and a length of 2 mm is formed.
A striped p-type resistance region 13 having a narrow width parallel to the long side of this region is formed by separating into a plurality of stripes. That is, the width of the stripes is 10 μm, the pitch of the stripes is 50 μm, and therefore,
Each striped p-type region 13 has a stripe spacing of 40 μm.
Boron ions were implanted at a dose of 2.0×10 12 cm -2 to give a surface concentration of 3.3× 10 16 cm -3 and a junction depth of 0.6 μm.
As a result, a large number of stripes, so-called striped p-type regions 13, were formed. A p-type region 14 for contact and an electrode 15 are provided at both ends of these striped p-type resistance regions 13, respectively. At this time, the resistance value between the electrodes of the p-type resistance region 13 was 100±20KΩ. Note that this striped p
In comparison with the conventional device for the shaped resistance region 13, when doping the entire rectangular region with p-type as in the conventional device, the dose amount must be increased to obtain the same resistance value.
Since it has to be reduced to 0.7×10 12 cm -2 ,
Due to the difficulty of controlling such a low dose, the variation in resistance value becomes large, and the resistance value also decreases to 140±
60KΩ, making it difficult to stably achieve the desired setting value. Even from this example, it is easy to control the resistance in this embodiment.
また、この縞状ｐ形抵抗領域１３を横切つて白
熱球から供給される光点を移動したとき、第４図
ａにみられるように、縞の繰り返しに対応して、
縞の間隙部で光電流の増加がみられた。光源にフ
イルターを挿入して赤外光の光点にすると、同図
ｂにみられるように、光電流の増加はなく、均一
な特性になつた。即ち、同図ａにみられる縞の間
隙における光電流の増加は、短波長の光の吸収に
よつて発生したキヤリアが、通常、ｐ形抵抗領域
１３内で再結合して消滅するのに対し、縞の間隙
部分ではｐ形抵抗領域１３からの横方向への空乏
層の拡がりにともなつて、表面近傍で発生したキ
ヤリアも再結合せずに、ドリフト電流となつて、
ｐ形領域１３およびそれらの各両端に配設された
コンタクト用ｐ形領域１４に至り、これが感度の
向上に寄与しているのである。一方、赤外光は深
いところで吸収される量が多いので、この表面の
効果は現われない。また、第４図ａにみられる感
度の分布は、光点を縞に平行に移動した時は現わ
れないので、両端の一対の電極１５，１５間にお
ける光点位置の検出には何ら影響しない。 Moreover, when the light spot supplied from the incandescent bulb is moved across this striped p-type resistance region 13, as shown in FIG. 4a, corresponding to the repetition of the stripes,
An increase in photocurrent was observed in the gaps between the stripes. When a filter was inserted into the light source to create an infrared light spot, the photocurrent did not increase and the characteristics became uniform, as seen in Figure b. In other words, the increase in photocurrent in the gaps between the stripes seen in Figure a is due to the fact that carriers generated by absorption of short wavelength light normally recombine and disappear within the p-type resistance region 13. In the gap between the stripes, as the depletion layer spreads in the lateral direction from the p-type resistance region 13, carriers generated near the surface do not recombine and become a drift current.
This leads to the p-type region 13 and the contact p-type regions 14 disposed at both ends thereof, which contribute to improved sensitivity. On the other hand, since a large amount of infrared light is absorbed deep down, this surface effect does not appear. Furthermore, the sensitivity distribution shown in FIG. 4a does not appear when the light spot is moved parallel to the stripes, so it has no effect on the detection of the light spot position between the pair of electrodes 15, 15 at both ends.
発明の効果
以上のように、この発明によると、感光半導体
装置の表面抵抗層を縞状に細く形成するので、安
定な高抵抗層を容易に形成することができる。ま
た、この発明は、短波長の光に対してはさらに感
度が向上する効果もあり、実用的価値大なるもの
である。Effects of the Invention As described above, according to the present invention, since the surface resistance layer of a photosensitive semiconductor device is formed into thin stripes, a stable high resistance layer can be easily formed. Furthermore, this invention has the effect of further improving sensitivity to short wavelength light, and has great practical value.
第１図は受光面に２つの電極を有するpinホト
ダイオードを示し、同図ａは断面構造図、同図ｂ
は表面構造図、第２図は同ホトダイオードの等価
的なポテンシヨンメータを示す図、第３図はこの
発明の実施例であるpinダイオードを示し、同図
ａは断面図、同図ｂは平面図、第４図はこの発明
の実施例であるpinホトダイオードの縞状ｐ形抵
抗領域を光点が移動したときの光電流特性で、同
図ａは白熱球による光電流特性図、同図ｂは赤外
光による光電流特性図である。
１１……ｎ形半導体基板、１２……真性半導体
または高抵抗ｎ形半導体層、１３……縞状ｐ形抵
抗領域、１４……コンタクト用ｐ形領域、１５…
…電極、１６……ｎ形半導体基板側電極。
Figure 1 shows a pin photodiode with two electrodes on the light-receiving surface.
2 is a diagram showing an equivalent potentiometer of the same photodiode, and FIG. 3 is a pin diode according to an embodiment of the present invention. Figure a is a cross-sectional view, and Figure b is a plan view. Figure 4 shows the photocurrent characteristics when a light spot moves through the striped p-type resistance region of a pin photodiode, which is an embodiment of the present invention. is a photocurrent characteristic diagram due to infrared light. DESCRIPTION OF SYMBOLS 11... N-type semiconductor substrate, 12... Intrinsic semiconductor or high-resistance n-type semiconductor layer, 13... Striped p-type resistance region, 14... P-type region for contact, 15...
...Electrode, 16...N-type semiconductor substrate side electrode.
Claims (1)
と、前記半導体基板表面に形成された同一導電形
の高抵抗領域もしくは真性半導体領域と、前記高
抵抗領域もしくは真性半導体領域の表面に形成さ
れ、前記半導体基板とは反対導電形で、互いに平
行に配設された多数の縞状抵抗領域とを有する受
光部および前記各縞状抵抗領域が相互に各両端で
並列に接続され、前記受光部に入射された光点か
らの光電流を、前記縞状抵抗領域を通じて検出す
るための一対の検出電極をそなえたことを特徴と
する感光半導体装置。1. A semiconductor substrate of a predetermined conductivity type having an electrode on the back surface, a high resistance region or an intrinsic semiconductor region of the same conductivity type formed on the surface of the semiconductor substrate, and a semiconductor substrate formed on the surface of the high resistance region or the intrinsic semiconductor region, A light-receiving section has a large number of striped resistance regions that are of the opposite conductivity type to the semiconductor substrate and are arranged in parallel to each other, and each of the striped resistance regions is connected in parallel to each other at both ends of the light-receiving section. A photosensitive semiconductor device comprising a pair of detection electrodes for detecting a photocurrent from a light spot through the striped resistance region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58003976A JPS59127883A (en) | 1983-01-12 | 1983-01-12 | Photosensitive semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58003976A JPS59127883A (en) | 1983-01-12 | 1983-01-12 | Photosensitive semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004045A Division JPH02224281A (en) | 1990-01-11 | 1990-01-11 | Semiconductor device for detecting incident position |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59127883A JPS59127883A (en) | 1984-07-23 |
| JPH0478032B2 true JPH0478032B2 (en) | 1992-12-10 |
Family
ID=11572081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58003976A Granted JPS59127883A (en) | 1983-01-12 | 1983-01-12 | Photosensitive semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59127883A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7037413B1 (en) | 1996-03-11 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0691278B2 (en) * | 1986-03-04 | 1994-11-14 | 浜松ホトニクス株式会社 | Semiconductor position detector |
| JPH0783133B2 (en) * | 1987-07-22 | 1995-09-06 | 松下電子工業株式会社 | Optical semiconductor device |
| JPS6446987A (en) * | 1987-08-17 | 1989-02-21 | Hamamatsu Photonics Kk | Semiconductor position detector |
| JPH07118550B2 (en) * | 1987-09-02 | 1995-12-18 | 富士電機株式会社 | Optical position detector |
| WO1989006052A1 (en) * | 1987-12-14 | 1989-06-29 | Santa Barbara Research Center | Reticulated junction photodiode having enhanced responsivity to short wavelength radiation |
| JP2524708Y2 (en) * | 1990-11-26 | 1997-02-05 | シャープ株式会社 | Position sensor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5072591A (en) * | 1973-10-29 | 1975-06-16 | ||
| JPS52124889A (en) * | 1976-04-12 | 1977-10-20 | Matsushita Electronics Corp | Semiconductor photoelectric transducer |
| JPS5917288A (en) * | 1982-07-20 | 1984-01-28 | Hamamatsu Tv Kk | Semiconductor device for detecting incident position |
| MC1716A1 (en) * | 1985-08-12 | 1986-09-22 | Toutelectric | Positioner |
-
1983
- 1983-01-12 JP JP58003976A patent/JPS59127883A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7037413B1 (en) | 1996-03-11 | 2006-05-02 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59127883A (en) | 1984-07-23 |
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