JPH0479148B2 - - Google Patents

Info

Publication number: JPH0479148B2
Authority: JP; Japan
Prior art keywords: region; gate; impurity density; thyristor; cathode
Prior art date: 1990-04-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP9525090A

Other languages

English (en)

Japanese (ja)

Other versions

JPH03292769A (ja

Inventor

Junichi Nishizawa

Sohee Suzuki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Individual

Original Assignee

Individual

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-04-10

Filing date

1990-04-10

Publication date

1992-12-15

1990-04-10 Application filed by Individual filed Critical Individual

1990-04-10 Priority to JP9525090A priority Critical patent/JPH03292769A/ja

1991-12-24 Publication of JPH03292769A publication Critical patent/JPH03292769A/ja

1992-12-15 Publication of JPH0479148B2 publication Critical patent/JPH0479148B2/ja

Status Granted legal-status Critical Current

Links

238000000034 method Methods 0.000 claims description 20
239000012535 impurity Substances 0.000 claims description 16
238000004519 manufacturing process Methods 0.000 claims description 14
238000009413 insulation Methods 0.000 claims description 4
238000001465 metallisation Methods 0.000 claims 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
238000005468 ion implantation Methods 0.000 description 5
230000003647 oxidation Effects 0.000 description 5
238000007254 oxidation reaction Methods 0.000 description 5
238000000206 photolithography Methods 0.000 description 5
229920002120 photoresistant polymer Polymers 0.000 description 5
238000005036 potential barrier Methods 0.000 description 5
238000010791 quenching Methods 0.000 description 5
239000003990 capacitor Substances 0.000 description 4
238000010586 diagram Methods 0.000 description 4
238000009792 diffusion process Methods 0.000 description 4
239000000758 substrate Substances 0.000 description 4
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
229910052796 boron Inorganic materials 0.000 description 3
150000002500 ions Chemical class 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
239000005360 phosphosilicate glass Substances 0.000 description 3
230000015556 catabolic process Effects 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
230000006698 induction Effects 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
150000004767 nitrides Chemical class 0.000 description 2
238000001020 plasma etching Methods 0.000 description 2
238000001771 vacuum deposition Methods 0.000 description 2
229910016006 MoSi Inorganic materials 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
229910008484 TiSi Inorganic materials 0.000 description 1
-1 WSi 2 Chemical compound 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
239000012298 atmosphere Substances 0.000 description 1
239000002131 composite material Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
230000000171 quenching effect Effects 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000009751 slip forming Methods 0.000 description 1
230000007704 transition Effects 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Landscapes

Thyristors (AREA)

JP9525090A 1990-04-10 1990-04-10 絶縁制御ｓｉサイリスタの製造方法 Granted JPH03292769A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP9525090A JPH03292769A (ja)	1990-04-10	1990-04-10	絶縁制御ｓｉサイリスタの製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP9525090A JPH03292769A (ja)	1990-04-10	1990-04-10	絶縁制御ｓｉサイリスタの製造方法

Publications (2)

Publication Number	Publication Date
JPH03292769A JPH03292769A (ja)	1991-12-24
JPH0479148B2 true JPH0479148B2 (fr)	1992-12-15

Family

ID=14132513

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP9525090A Granted JPH03292769A (ja)	1990-04-10	1990-04-10	絶縁制御ｓｉサイリスタの製造方法

Country Status (1)

Country	Link
JP (1)	JPH03292769A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5324966A (en) *	1992-04-07	1994-06-28	Toyo Denki Seizo Kabushiki Kaisha	MOS-controlled thyristor
JP2007258591A (ja) *	2006-03-24	2007-10-04	Ngk Insulators Ltd	電流抑制層付き静電誘導サイリスタ、電流抑制層付き静電誘導サイリスタの保護回路及びパルス発生回路

1990
- 1990-04-10 JP JP9525090A patent/JPH03292769A/ja active Granted

Also Published As

Publication number	Publication date
JPH03292769A (ja)	1991-12-24

Legal Events

Date	Code	Title	Description
2005-10-03	S531	Written request for registration of change of domicile	Free format text: JAPANESE INTERMEDIATE CODE: R313531
2005-10-12	R350	Written notification of registration of transfer	Free format text: JAPANESE INTERMEDIATE CODE: R350
2007-12-15	LAPS	Cancellation because of no payment of annual fees

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