JPH0479420U - - Google Patents
Info
- Publication number
- JPH0479420U JPH0479420U JP12267590U JP12267590U JPH0479420U JP H0479420 U JPH0479420 U JP H0479420U JP 12267590 U JP12267590 U JP 12267590U JP 12267590 U JP12267590 U JP 12267590U JP H0479420 U JPH0479420 U JP H0479420U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- vapor deposition
- chemical vapor
- electrodes
- opposing electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Description
第１図は本考案のボート構造を示す斜視図、第
２図は本考案装置の電気回路図、第３図は従来技
術のボート構造を示す斜視図、第４図は従来技術
のプラズマ化学気相成長装置の断面図である。
１……ウエーハ、２……ウエーハ載置電極、３
……ボート、５……ヒータ、９……電極連結板、
１０……高周波切替スイツチ、１１……高周波電
源。
Fig. 1 is a perspective view showing the boat structure of the present invention, Fig. 2 is an electric circuit diagram of the device of the present invention, Fig. 3 is a perspective view showing the boat structure of the prior art, and Fig. 4 is a plasma chemical vaporization diagram of the prior art. FIG. 2 is a cross-sectional view of a phase growth apparatus. 1...Wafer, 2...Wafer mounting electrode, 3
... Boat, 5 ... Heater, 9 ... Electrode connection plate,
10... High frequency changeover switch, 11... High frequency power supply.
Claims (1)
置し、電極間に発生させたガスプラズマによる化
学反応を利用してウエーハ上に薄膜を形成するプ
ラズマ化学気相成長装置において、 対向する電極間に高周波電圧を印加する構造と
、それぞれの電極自身に高周波電流を流す構造と
を、同一の高周波電源を用い切換えて実現できる
ようにしたことを特徴とするプラズマ化学気相成
長装置。[Claims for Utility Model Registration] In a plasma chemical vapor deposition apparatus that places a wafer on at least one of opposing electrodes and forms a thin film on the wafer using a chemical reaction caused by gas plasma generated between the electrodes. , plasma chemical vapor deposition characterized in that a structure in which a high-frequency voltage is applied between opposing electrodes and a structure in which a high-frequency current is passed through each electrode itself can be realized by switching using the same high-frequency power source. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12267590U JPH0479420U (en) | 1990-11-22 | 1990-11-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12267590U JPH0479420U (en) | 1990-11-22 | 1990-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0479420U true JPH0479420U (en) | 1992-07-10 |
Family
ID=31870436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12267590U Pending JPH0479420U (en) | 1990-11-22 | 1990-11-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0479420U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020510964A (en) * | 2017-02-28 | 2020-04-09 | マイヤー・ブルガー（ジャーマニー）ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | Electrode unit having internal electric network for supplying high-frequency voltage and carrier device for plasma processing apparatus |
-
1990
- 1990-11-22 JP JP12267590U patent/JPH0479420U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020510964A (en) * | 2017-02-28 | 2020-04-09 | マイヤー・ブルガー（ジャーマニー）ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | Electrode unit having internal electric network for supplying high-frequency voltage and carrier device for plasma processing apparatus |
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