JPH024238U - - Google Patents
Info
- Publication number
- JPH024238U JPH024238U JP8209088U JP8209088U JPH024238U JP H024238 U JPH024238 U JP H024238U JP 8209088 U JP8209088 U JP 8209088U JP 8209088 U JP8209088 U JP 8209088U JP H024238 U JPH024238 U JP H024238U
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- high frequency
- matching unit
- power switch
- switching mechanism
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010586 diagram Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案機構の第１実施例の構成を示す
説明図、第２図は本考案機構の第２の実施例の構
成を示す説明図、第３図は従来の一例の構成を示
す説明図である。
１……真空容器、２……試料基板、３……高周
波印加電極、４……対向電極、５ａ，５ｂ……絶
縁物、６……高周波電力切換え器、７ａ〜７ｃ…
…高周波電力供給線、７ｄ……制御信号ケーブル
、８……マツチングユニツト、９ａ……（エツチ
ング用）高周波電力供給源、９ｂ……（電極クリ
ーニング用）高周波電力供給源、１１ａ〜１１ｂ
……高周波電力供給ケーブル用コネクタ、１２…
…高周波シールド、１１ｃ……制御信号ケーブル
用コネクタ。
FIG. 1 is an explanatory diagram showing the configuration of the first embodiment of the mechanism of the present invention, FIG. 2 is an explanatory diagram showing the configuration of the second embodiment of the mechanism of the present invention, and FIG. 3 is a diagram showing the configuration of a conventional example. It is an explanatory diagram. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Sample substrate, 3... High frequency application electrode, 4... Counter electrode, 5a, 5b... Insulator, 6... High frequency power switch, 7a to 7c...
...High frequency power supply line, 7d...Control signal cable, 8...Matching unit, 9a...High frequency power supply source (for etching), 9b...High frequency power supply source (for electrode cleaning), 11a to 11b
...High frequency power supply cable connector, 12...
...High frequency shield, 11c...Connector for control signal cable.
Claims (1)
にプラズマ発生用ガスを導入すると共に高周波印
加電極３に高周波電力を印加してプラズマを発生
させる装置において、高周波電力と比較的周波数
の低い電力のいずれか一方を選択して高周波印加
電極３に印加する高周波電力切換え器６と、高周
波電力の整合を行うマツチングユニツト８とを真
空容器１の近傍に設置せしめてなる高周波電力切
換え機構。 (2) 高周波電力切換え器６とマツチングユニツ
ト８とを真空容器１の近傍に一体化して設置する
と共に、高周波電力切換え器６とマツチングユニ
ツト８とを高周波シールド１２で覆つた密閉構造
とした実用新案登録請求の範囲第１項記載の高周
波電力切換え機構。[Scope of Claim for Utility Model Registration] (1) In an apparatus for generating plasma by introducing a plasma generating gas into a vacuum container 1 containing a high frequency applying electrode 3 and applying high frequency power to the high frequency applying electrode 3, A high frequency power switch 6 that selects either high frequency power or relatively low frequency power and applies it to the high frequency application electrode 3, and a matching unit 8 that matches the high frequency power are installed near the vacuum vessel 1. High frequency power switching mechanism. (2) The high-frequency power switch 6 and the matching unit 8 are integrated and installed near the vacuum vessel 1, and the high-frequency power switch 6 and the matching unit 8 are covered with a high-frequency shield 12 to form a sealed structure. A high frequency power switching mechanism according to claim 1 of the utility model registration claim.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8209088U JPH024238U (en) | 1988-06-20 | 1988-06-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8209088U JPH024238U (en) | 1988-06-20 | 1988-06-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH024238U true JPH024238U (en) | 1990-01-11 |
Family
ID=31306853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8209088U Pending JPH024238U (en) | 1988-06-20 | 1988-06-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH024238U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03171623A (en) * | 1989-10-03 | 1991-07-25 | Applied Materials Inc | Plasma treatment for semiconductor wafer manufacture and device therefor |
-
1988
- 1988-06-20 JP JP8209088U patent/JPH024238U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03171623A (en) * | 1989-10-03 | 1991-07-25 | Applied Materials Inc | Plasma treatment for semiconductor wafer manufacture and device therefor |
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