JPH0481052U - - Google Patents
Info
- Publication number
- JPH0481052U JPH0481052U JP12434590U JP12434590U JPH0481052U JP H0481052 U JPH0481052 U JP H0481052U JP 12434590 U JP12434590 U JP 12434590U JP 12434590 U JP12434590 U JP 12434590U JP H0481052 U JPH0481052 U JP H0481052U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon
- field effect
- ion sensor
- insulated gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 8
- 239000012528 membrane Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 239000004014 plasticizer Substances 0.000 claims 1
- -1 polyimide Chemical compound 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229920000915 polyvinyl chloride Polymers 0.000 claims 1
- 239000004800 polyvinyl chloride Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
第１図は本考案の第１の実施例斜視図、第２図
は第１図のａ−ａ′部を示す図、第３図、第４図
、第５図は本考案の第２、第３、第４の実施例を
示す図、第６図はフローセルを示す図、第７図は
本考案の評価システムを示す図、第８図は本考案
の効果を表わす図である。
１……シリコン基板、２……第２のシリコン基
板、３……穴、４……電極、５……イオン感応膜
、６……ソース、７……ドレイン、８……二酸化
シリコン、９……窒化シリコン、１０……二酸化
シリコン膜、１１，１２……ウエル、１３……プ
リント基板、１４，１５……電界効果トランジス
タ、１６……ガラス基板、１７……空間、１８…
…集積化イオンセンサ、１９……ピン、２０……
ワイヤ、２１……入口側流路、２２……出口側流
路、２３……アクリルブロツク、２４……エポシ
キ樹脂、２５……フローセル、２６……ポンプ、
２７……バルブ、２８……試料ボトル、２９……
参照電極、３０……参照電極用ボトル、３１……
廃液ボトル、３２，３３……演算増幅器、３４，
３５……定電流源、３６……抵抗、３７……出力
、３８……記録計。
Fig. 1 is a perspective view of the first embodiment of the present invention, Fig. 2 is a view taken along the line a-a' in Fig. 1, and Figs. FIG. 6 is a diagram showing the flow cell, FIG. 7 is a diagram showing the evaluation system of the present invention, and FIG. 8 is a diagram showing the effects of the present invention. DESCRIPTION OF SYMBOLS 1... Silicon substrate, 2... Second silicon substrate, 3... Hole, 4... Electrode, 5... Ion sensitive film, 6... Source, 7... Drain, 8... Silicon dioxide, 9... ... silicon nitride, 10 ... silicon dioxide film, 11, 12 ... well, 13 ... printed circuit board, 14, 15 ... field effect transistor, 16 ... glass substrate, 17 ... space, 18 ...
...Integrated ion sensor, 19...Pin, 20...
Wire, 21... Inlet side channel, 22... Outlet side channel, 23... Acrylic block, 24... Epoxy resin, 25... Flow cell, 26... Pump,
27... Valve, 28... Sample bottle, 29...
Reference electrode, 30... Reference electrode bottle, 31...
Waste liquid bottle, 32, 33... operational amplifier, 34,
35... Constant current source, 36... Resistor, 37... Output, 38... Recorder.
Claims (1)
トランジスタを設け、該絶縁ゲート電界効果トラ
ンジスタのゲート部及び電極部以外の表面に、該
絶縁ゲート電界効果トランジスタのゲート部及び
電極部に対応した部分に、表面と裏面とで面積が
異なる穴のあいた第２の平板を設け、該穴の中に
イオン感応膜を形成したことを特徴とする集積化
イオンセンサ。 ２ 請求項第１項に記載の絶縁ゲート電界効果ト
ランジスタは、二酸化シリコン（ＳｉＯ２）の上
に窒化シリンコン（Ｓｉ３Ｎ４）又は酸化アルミ
ニウム（Ａｌ２Ｏ３）又は酸化タンタル（Ｔａ２
Ｏ５）を積層した二層ゲート絶縁膜を有すること
を特徴とする集積化イオンセンサ。 ３ 請求項第１項に記載の平板は、シリコン又は
ガラス又はポリイミド等の高分子から成り、フオ
トリソグラフイー技術とエツチング技術により穴
が設けられたことを特徴とする集積化イオンセン
サ。 ４ 請求項第１項に記載のイオン感応膜はポリ塩
化ビニル、可塑剤、イオン感応物質から成ること
を特徴とする集積化イオンセンサ。 ５ 請求項第１項に記載の基板は、シリコン基板
、シリコン・オン・サフアイア（ＳＯＳ）基板、
アモルフアスシリコン基板等の半導体基板、又は
プリント基板、ガラス基板、エポキシ基板等の絶
縁基板であることを特徴とする集積化イオンセン
サ。[Claims for Utility Model Registration] 1. One or more insulated gate field effect transistors are provided on a substrate, and the gate of the insulated gate field effect transistor is provided on the surface other than the gate part and electrode part of the insulated gate field effect transistor. An integrated ion sensor characterized in that a second flat plate is provided with holes having different areas on the front and back surfaces in a portion corresponding to the electrode portion and the electrode portion, and an ion-sensitive membrane is formed in the hole. 2. The insulated gate field effect transistor according to claim 1 comprises silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), or tantalum oxide (Ta 2 ) on silicon dioxide (SiO 2 ) .
An integrated ion sensor characterized by having a two-layer gate insulating film laminated with O 5 ). 3. An integrated ion sensor according to claim 1, wherein the flat plate is made of silicon, glass, or a polymer such as polyimide, and has holes formed therein by photolithography and etching techniques. 4. An integrated ion sensor, wherein the ion-sensitive membrane according to claim 1 comprises polyvinyl chloride, a plasticizer, and an ion-sensitive substance. 5. The substrate according to claim 1 is a silicon substrate, a silicon-on-sapphire (SOS) substrate,
An integrated ion sensor characterized by being a semiconductor substrate such as an amorphous silicon substrate, or an insulating substrate such as a printed circuit board, glass substrate, or epoxy substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12434590U JPH0481052U (en) | 1990-11-28 | 1990-11-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12434590U JPH0481052U (en) | 1990-11-28 | 1990-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0481052U true JPH0481052U (en) | 1992-07-15 |
Family
ID=31872003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12434590U Pending JPH0481052U (en) | 1990-11-28 | 1990-11-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0481052U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009545723A (en) * | 2006-06-30 | 2009-12-24 | インテル・コーポレーション | Three-dimensional integrated circuit for analyte detection |
-
1990
- 1990-11-28 JP JP12434590U patent/JPH0481052U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009545723A (en) * | 2006-06-30 | 2009-12-24 | インテル・コーポレーション | Three-dimensional integrated circuit for analyte detection |
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