JPH0481300U - - Google Patents
Info
- Publication number
- JPH0481300U JPH0481300U JP12421190U JP12421190U JPH0481300U JP H0481300 U JPH0481300 U JP H0481300U JP 12421190 U JP12421190 U JP 12421190U JP 12421190 U JP12421190 U JP 12421190U JP H0481300 U JPH0481300 U JP H0481300U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- memory device
- transistor
- sense amplifier
- storage section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 3
Description
第１図は本考案の一実施例を示す回路図、第２
図は従来の回路構成を示す図、第３図は第２図の
構成の動作を説明する図、第４図および第５図は
本考案の回路の動作を説明する図である。
ＤＥＣ……アドレスデコーダ、ＡＤ１〜ＡＤｎ
……アドレスデータ、Ｐ１……プリチヤージ用Ｐ
ＭＯＳトランジスタ、Ｎ１〜Ｎｎ……メモリ用Ｎ
ＭＯＳトランジスタ、Ｎｄ……デイスチヤージ用
ＮＭＯＳトランジスタ、Ｉ１，Ｉ２……インバー
タ。
Figure 1 is a circuit diagram showing one embodiment of the present invention;
This figure shows a conventional circuit configuration, FIG. 3 is a diagram explaining the operation of the configuration of FIG. 2, and FIGS. 4 and 5 are diagrams explaining the operation of the circuit of the present invention. DEC...Address decoder, AD1 to ADn
... Address data, P1 ... P for pre-charge
MOS transistor, N1 to Nn ...N for memory
MOS transistor, Nd ... NMOS transistor for discharge, I1, I2... Inverter.
Claims (1)
段のメモリ用トランジスタおよびデイスクチヤー
ジ用トランジスタを含む情報記憶部及びセンスア
ンプを有し、プリチヤージを行なうことによつて
前記センスアンプより情報記憶部の情報を検出す
る半導体記憶装置において、前記センスアンプの
入力端子をデイスチヤージ用ＭＯＳトランジスタ
のドレイン側に接続したことを特徴とする半導体
記憶装置。 Pre-charge transistor in series, n
In a semiconductor memory device, the semiconductor memory device has an information storage section including a memory transistor and a disk charge transistor in a stage, and a sense amplifier, and detects information in the information storage section from the sense amplifier by performing precharging. 1. A semiconductor memory device, characterized in that an input terminal of the device is connected to a drain side of a discharge MOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12421190U JPH0481300U (en) | 1990-11-28 | 1990-11-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12421190U JPH0481300U (en) | 1990-11-28 | 1990-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0481300U true JPH0481300U (en) | 1992-07-15 |
Family
ID=31871871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12421190U Pending JPH0481300U (en) | 1990-11-28 | 1990-11-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0481300U (en) |
-
1990
- 1990-11-28 JP JP12421190U patent/JPH0481300U/ja active Pending
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