JPH0481857B2 - - Google Patents

Info

Publication number
JPH0481857B2
JPH0481857B2 JP59226770A JP22677084A JPH0481857B2 JP H0481857 B2 JPH0481857 B2 JP H0481857B2 JP 59226770 A JP59226770 A JP 59226770A JP 22677084 A JP22677084 A JP 22677084A JP H0481857 B2 JPH0481857 B2 JP H0481857B2
Authority
JP
Japan
Prior art keywords
nisi
single crystal
substrate
vacuum
contaminants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59226770A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61105846A (ja
Inventor
Akitoshi Ishizaka
Yasuhiro Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59226770A priority Critical patent/JPS61105846A/ja
Publication of JPS61105846A publication Critical patent/JPS61105846A/ja
Publication of JPH0481857B2 publication Critical patent/JPH0481857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP59226770A 1984-10-30 1984-10-30 清浄表面の形成方法 Granted JPS61105846A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59226770A JPS61105846A (ja) 1984-10-30 1984-10-30 清浄表面の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59226770A JPS61105846A (ja) 1984-10-30 1984-10-30 清浄表面の形成方法

Publications (2)

Publication Number Publication Date
JPS61105846A JPS61105846A (ja) 1986-05-23
JPH0481857B2 true JPH0481857B2 (2) 1992-12-25

Family

ID=16850335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59226770A Granted JPS61105846A (ja) 1984-10-30 1984-10-30 清浄表面の形成方法

Country Status (1)

Country Link
JP (1) JPS61105846A (2)

Also Published As

Publication number Publication date
JPS61105846A (ja) 1986-05-23

Similar Documents

Publication Publication Date Title
US4231809A (en) Method of removing impurity metals from semiconductor devices
JP4220702B2 (ja) SiC半導体層およびショットキーコンタクトの表面を処理するための方法
JPS61270830A (ja) 表面清浄化方法
JP4325095B2 (ja) SiC素子の製造方法
US12485458B2 (en) Method for removing layers of silicon carbide, as well as process and apparatus for cleaning epitaxial reactor components
JPS6221756B2 (2)
JP2595935B2 (ja) 表面清浄化方法
JPS60147123A (ja) 半導体装置の製造方法
JPS60152021A (ja) ニツケルシリサイド表面の汚染防止法
JP2558273B2 (ja) 表面クリ−ニング方法
JPS61105846A (ja) 清浄表面の形成方法
JP2637950B2 (ja) 表面清浄化方法
JPH02151031A (ja) 半導体装置の製造方法
JPH0669087A (ja) シリコン基板の形成方法
JPH1197406A (ja) 半導体基板の洗浄方法及びそれを用いた半導体装置の製造方法
JPS63160324A (ja) 分子線エピタキシヤル結晶成長方法
JPH0645318A (ja) GaAsウェハ及びその製造方法
JPH0410417A (ja) 化合物半導体の表面処理方法
JPH03131593A (ja) エピタキシヤル成長用基板の前処理方法
JPS6158230A (ja) 結晶成長方法
JPH02152236A (ja) 配線の形成方法
KR940008365B1 (ko) 반도체 기판의 표면청정방법
JP3365098B2 (ja) エピタキシャル半導体ウェーハの製造方法
JPH0536654A (ja) 化合物半導体のパターン形成方法
JPH0644562B2 (ja) 表面清浄化方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term