JPS6221756B2 - - Google Patents

Info

Publication number: JPS6221756B2
Authority: JP; Japan
Prior art keywords: substrate; oxide film; solution containing; vacuum; cleaning
Prior art date: 1983-03-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP3376983A

Other languages

English (en)

Japanese (ja)

Other versions

JPS59162200A (ja

Inventor

Akitoshi Ishizaka

Yasuhiro Shiraki

Eiichi Maruyama

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-03-03

Filing date

1983-03-03

Publication date

1987-05-14

1983-03-03 Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology

1983-03-03 Priority to JP3376983A priority Critical patent/JPS59162200A/ja

1984-09-13 Publication of JPS59162200A publication Critical patent/JPS59162200A/ja

1987-05-14 Publication of JPS6221756B2 publication Critical patent/JPS6221756B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 43
238000000034 method Methods 0.000 claims description 15
238000004140 cleaning Methods 0.000 claims description 10
239000000126 substance Substances 0.000 claims description 9
229910052736 halogen Inorganic materials 0.000 claims description 6
150000002367 halogens Chemical class 0.000 claims description 6
238000010438 heat treatment Methods 0.000 claims description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
238000009835 boiling Methods 0.000 claims description 5
229910052710 silicon Inorganic materials 0.000 claims description 5
239000010703 silicon Substances 0.000 claims description 5
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
229910017604 nitric acid Inorganic materials 0.000 claims description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
229910000040 hydrogen fluoride Inorganic materials 0.000 claims 2
239000010408 film Substances 0.000 description 20
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
239000000356 contaminant Substances 0.000 description 6
239000013078 crystal Substances 0.000 description 6
230000007547 defect Effects 0.000 description 6
238000001704 evaporation Methods 0.000 description 6
230000008020 evaporation Effects 0.000 description 5
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
239000007864 aqueous solution Substances 0.000 description 3
238000007796 conventional method Methods 0.000 description 3
239000012535 impurity Substances 0.000 description 3
239000000243 solution Substances 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 2
238000011109 contamination Methods 0.000 description 2
238000010894 electron beam technology Methods 0.000 description 2
238000001451 molecular beam epitaxy Methods 0.000 description 2
238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
238000001179 sorption measurement Methods 0.000 description 2
238000004381 surface treatment Methods 0.000 description 2
239000010409 thin film Substances 0.000 description 2
238000005406 washing Methods 0.000 description 2
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
238000000137 annealing Methods 0.000 description 1
XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
-1 argon ions Chemical class 0.000 description 1
GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
238000005238 degreasing Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000002003 electron diffraction Methods 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
239000007789 gas Substances 0.000 description 1
238000007654 immersion Methods 0.000 description 1
238000010849 ion bombardment Methods 0.000 description 1
150000001247 metal acetylides Chemical class 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
238000004506 ultrasonic cleaning Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP3376983A 1983-03-03 1983-03-03 シリコン基板表面の清浄化法 Granted JPS59162200A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP3376983A JPS59162200A (ja)	1983-03-03	1983-03-03	シリコン基板表面の清浄化法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP3376983A JPS59162200A (ja)	1983-03-03	1983-03-03	シリコン基板表面の清浄化法

Publications (2)

Publication Number	Publication Date
JPS59162200A JPS59162200A (ja)	1984-09-13
JPS6221756B2 true JPS6221756B2 (2)	1987-05-14

Family

ID=12395651

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP3376983A Granted JPS59162200A (ja)	1983-03-03	1983-03-03	シリコン基板表面の清浄化法

Country Status (1)

Country	Link
JP (1)	JPS59162200A (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03201427A (ja) *	1989-12-28	1991-09-03	Nec Corp	半導体薄膜の形成方法
JP2548357Y2 (ja) *	1990-02-20	1997-09-17	住友シチックス株式会社	ウエーハの熱処理用載置治具
US5817174A (en) *	1995-12-15	1998-10-06	Kabushiki Kaisha Toshiba	Semiconductor substrate and method of treating semiconductor substrate
JPH11283924A (ja) *	1998-03-27	1999-10-15	Super Silicon Kenkyusho:Kk	半導体ウエハ製造方法

1983
- 1983-03-03 JP JP3376983A patent/JPS59162200A/ja active Granted

Also Published As

Publication number	Publication date
JPS59162200A (ja)	1984-09-13

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KR100220926B1 (ko)	1999-09-15	소수성 실리콘 웨이퍼의 세정방법
US5470799A (en)	1995-11-28	Method for pretreating semiconductor substrate by photochemically removing native oxide
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