JPH0483867A - Formation of thin film on thin strip by electron beam flash deposition - Google Patents
Formation of thin film on thin strip by electron beam flash depositionInfo
- Publication number
- JPH0483867A JPH0483867A JP19668090A JP19668090A JPH0483867A JP H0483867 A JPH0483867 A JP H0483867A JP 19668090 A JP19668090 A JP 19668090A JP 19668090 A JP19668090 A JP 19668090A JP H0483867 A JPH0483867 A JP H0483867A
- Authority
- JP
- Japan
- Prior art keywords
- strip
- hearth
- ribbon
- thin film
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 10
- 230000008021 deposition Effects 0.000 title claims description 4
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 238000001704 evaporation Methods 0.000 claims description 25
- 230000008020 evaporation Effects 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000008685 targeting Effects 0.000 claims 1
- 230000008016 vaporization Effects 0.000 abstract 2
- 238000009834 vaporization Methods 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 230000005291 magnetic effect Effects 0.000 description 11
- 230000005389 magnetism Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000012776 electronic material Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野J
この発明は軟磁性、硬磁性、超伝導、半導体及び誘電体
等のエレクトロニクス材料薄膜の製造法に関する。DETAILED DESCRIPTION OF THE INVENTION INDUSTRIAL APPLICATION J This invention relates to a method for manufacturing thin films of electronic materials such as soft magnetism, hard magnetism, superconductivity, semiconductors and dielectric materials.
「従来の技術とその問題点−1
エレクトロニクス材料薄膜においては、その構成元素の
間で蒸気圧に著しい差のある場合が多い。"Prior art and its problems - 1 In thin films of electronic materials, there are often significant differences in vapor pressure between the constituent elements.
その場合スパッタ製膜法では、蒸発源と膜との間での組
成ずれは比較的少ないが、成膜速度は遅い。In this case, in the sputtering film forming method, there is relatively little compositional deviation between the evaporation source and the film, but the film forming rate is slow.
方電子ビーム蒸着法では、成膜速度は速L)が組成ずれ
が大きい。これはビーム加熱によりハース中にできる熔
融体プールで分溜が起きるからである。その一つの解決
法として各元素ごとの蒸発源からの同時蒸着法があるが
、コントロールが複雑であり、また基盤側の位置による
組成変化がおこる。やはり一つの合金組成蒸発源がのぞ
ましし)。However, in the electron beam evaporation method, the film formation rate is high (L), but the composition deviation is large. This is because fractionation occurs in the melt pool formed in the hearth due to beam heating. One solution to this problem is simultaneous evaporation from evaporation sources for each element, but control is complicated and the composition changes depending on the position on the substrate side. After all, one alloy composition evaporation source is desirable).
この分溜組成ずれを無くす方法としてフラッシュ法かあ
る。これは線状あるいは粒状の蒸発源を、熔融体プール
が残らないような供給速度で高温の抵抗加熱体上に供給
するもので、供給された物かほぼ瞬時に蒸発し全組成そ
のままで蒸着するものである。 このフラッシュ法を
全く方式の異なる電子ビーム蒸着法に適用することは殆
ど行われていない。何故なら垂直下方に入射している電
子ビームに粒あるいは線状の蒸発源がうまく当たるよう
に供給しビームエネルギーを直接蒸発源に与えて安定か
つ連続的にフラノツユ蒸発させる事が困難だからである
。There is a flash method as a method to eliminate this difference in fractional composition. In this method, a linear or granular evaporation source is supplied onto a high-temperature resistance heating element at a supply rate that does not leave a molten pool, and the supplied material evaporates almost instantly and is deposited with its entire composition intact. It is something. This flash method has hardly been applied to a completely different type of electron beam evaporation method. This is because it is difficult to supply a particle or linear evaporation source so that it hits the electron beam incident vertically downward, and to apply beam energy directly to the evaporation source to stably and continuously evaporate the flanite.
この発明の目的は、成膜速度大でコノタミネーノヨノ無
して高融点物質にも適用可能な電子ビーム蒸着のメリッ
トを生かしなから、組成ずれの無い連続フラッシュ法を
弓能とするような蒸発源の形態とその供給法を工夫する
ことによって、蒸気圧の著しく異なる成分を含む組成の
蒸着膜を屯産製造しようとするものである。The purpose of this invention is to take advantage of the advantages of electron beam evaporation, which can be applied to high-melting-point materials at high film formation speed and without contamination, and to achieve evaporation that utilizes a continuous flash method without compositional deviation. By devising the form of the source and its supply method, the aim is to produce a deposited film with a composition containing components with significantly different vapor pressures.
「問題を解決するための手段と作用」
ビーム被照射部がフラッシュ蒸発するための条件は、そ
の部分の熱容量が小で非照射(低温)部分への伝熱がゼ
ロか小である事である。粒はその条件は満たしているが
供給方法が難しい。"Means and actions to solve the problem" The conditions for flash evaporation of the beam irradiated area are that the heat capacity of that area is small and the heat transfer to the non-irradiated (low temperature) area is zero or small. . The grains meet these requirements, but the supply method is difficult.
(1) そこで、本発明の構成(+)において蒸発源
として薄帯特に液体急冷薄帯をこれら両条件を満たすも
のとして用いる。幸い近年液体からの急冷薄帯作成技術
が進歩し、特に軟磁性アモルファスでは、厚さ15〜1
00ミクロンで数cm以上の広幅薄帯のドラム巻長尺物
が製造されている。アモルファスに限らず結晶状態し含
めて広幅薄帯作成技術は現在確立しており、その方法で
各種組成の薄帯を作ることができる。但し電子ビーム蒸
着に用いるので、ガス含有量の少ない真空中或は不活性
ガス中単ロール法で作った物を使う。(1) Therefore, in configuration (+) of the present invention, a ribbon, particularly a liquid quenched ribbon, is used as the evaporation source as one that satisfies both of these conditions. Fortunately, in recent years, technology for producing quenched ribbons from liquids has progressed, and especially for soft magnetic amorphous ribbons, thicknesses of 15 to 1
Drum-wound elongated thin ribbons with a width of several centimeters or more are manufactured at 0.00 micron. The technology for producing wide ribbons, not only amorphous but also crystalline, has now been established, and ribbons of various compositions can be produced using this method. However, since it is used for electron beam evaporation, it should be made by a single roll method in vacuum or inert gas with a low gas content.
詳しくは水容等編集[アモルファス合金作成の手引きj
(1986アグネ技術センター)を見られたい。For more information, see Water Volume Edit [Guidebook for Creating Amorphous Alloys]
(1986 Agne Technology Center) I would like to see it.
液体急冷薄帯を用いたため次ぎの作用効果が得られる。Since the liquid quenched ribbon is used, the following effects can be obtained.
(1−a)機能性エレクトロニクス材料のかなり多くの
物質を急冷薄帯の形態でのフラッシュ蒸発源(ターゲッ
ト)にすることができる。(1-a) A large number of functional electronic materials can be flash evaporation sources (targets) in the form of quenched ribbons.
(1−b)非常に薄く出来るので、熱容量小で固体伝熱
ロス小となりフラッシュ蒸発を可能にする。(1-b) Since it can be made very thin, it has a small heat capacity and solid heat transfer loss, making flash evaporation possible.
(]−c)薄いだけでなくしなやかでもあるのでドラム
に巻く事ができる。これは真空槽中に多量の蒸発源を仕
込み連続量産することを可能にする。(]-c) It is not only thin but also flexible, so it can be wrapped around a drum. This enables continuous mass production by placing a large amount of evaporation sources in a vacuum chamber.
(+−d)広幅の薄帯をターゲットにするので、その中
央部をビームフラッシュ蒸発し両縁(へり)を残すこと
ができる。従って薄帯の送り込み側だけでなく巻取り側
も駆動制御出来るのでビームが垂直入射するように薄帯
を水平に張ることができ、またその最適速度での連続供
給制御が可能となる。(+-d) Since a wide ribbon is targeted, the central part can be evaporated by the beam flash, leaving both edges. Therefore, it is possible to drive and control not only the feeding side of the ribbon but also the winding side, so that the ribbon can be stretched horizontally so that the beam is perpendicularly incident, and continuous feeding control at an optimum speed is possible.
この急冷薄帯の外に次の二つも薄帯として用し)る事か
できる。(1)組成によっては圧延によって薄帯になる
物もありこれを用いる事もできる。In addition to this quenched ribbon, the following two can also be used as thin ribbons. (1) Depending on the composition, some products can be rolled into thin strips, which can also be used.
」産性の点からはこの方が有利である。但し洗浄と予備
ガス出しを十分にする必要がある。(ii)目的の膜組
成のうちある成分を除いた他の組成が液体急冷薄帯ある
いは圧延薄帯になりやすい場合には、先づこれらの薄帯
を作りその一面あるいは両面上にその除いた成分を蒸着
、スパッタあるい(2)これらの薄帯を組込んで連続フ
ラッシュA−C)、次にプロセス的構成について、薄帯
述べる(2−D−E)。” This is more advantageous from the point of view of productivity. However, sufficient cleaning and preliminary gas release are required. (ii) If the desired film composition except for a certain component tends to form a liquid quenched ribbon or a rolled ribbon, first prepare these ribbons and remove the component on one or both sides. The components are evaporated, sputtered or (2) continuously flashed by incorporating these ribbons (A-C), and then the process configuration is described (2-D-E).
(2−A )薄帯はハースの上方を水平を保って(偏向
ビーム面と直交する)y方向に走行する。ビームはハー
スのカップの中心軸上付近で薄帯に垂直入射しフラッシ
ュ蒸発が行われる。ハースデツキのある装置では薄帯走
行位置に合わせて デツキの下面を(薄帯幅×深さ約1
m m )で平削する。(2-A) The ribbon runs above the hearth in the y direction (perpendicular to the deflected beam plane) while keeping it horizontal. The beam is perpendicularly incident on the ribbon near the central axis of the Haas cup, and flash evaporation is performed. For equipment with a hearth deck, adjust the bottom surface of the deck to match the ribbon running position (width of the ribbon x approximately 1 depth).
Plane with mm).
デツキとハースの間にできたこの隙間に薄帯を通す。(
2−B)ハース保護用の円盤を必要に応じて ハース底
に密着して置く。これはフラッシュ穴を通り抜けたビー
ムの熱を吸収水冷排熱する際に、直接ハースてビームを
受けると損傷する恐れがあるからである。これは良伝導
性高融点の厚い物とし、これからの蒸発が薄帯からのフ
ラッシュ蒸発に比べて無視できるようにする。薄帯と同
じ組成の厚い円盤を用いれば、仮に少し蒸発しても蒸着
膜組成への影響は少ない。この円盤を通ってのビーム熱
排熱用に通常のハースを兼用できるが、この目的には大
きな凹みは必ずしも必要ではない(ハース的構造物でよ
い)。Pass the thin strip through this gap between the deck and the hearth. (
2-B) If necessary, place a disc to protect the hearth in close contact with the bottom of the hearth. This is because when absorbing the heat of the beam passing through the flash hole and discharging it by water cooling, there is a risk of damage if the beam is directly received by the hearth. This should be a thick material with good conductivity and a high melting point so that further evaporation is negligible compared to flash evaporation from the ribbon. If a thick disk with the same composition as the thin strip is used, even if a small amount evaporates, it will have little effect on the composition of the deposited film. A normal hearth can also be used to dissipate beam heat through this disc, but a large recess is not necessarily required for this purpose (a hearth-like structure may be sufficient).
(2−C)#布供給側ドラム装置と巻取り装置とをハー
スを挟んで両側に設置する。これらを駆動制御して、W
i帯が水平に張られかつフラッシュ効率の良い走行速度
に調節ができるようにする。(2-C) #The fabric supply side drum device and the winding device are installed on both sides of the hearth. By driving and controlling these, W
To enable an i-band to be stretched horizontally and to adjust the traveling speed to a high flash efficiency.
(良い効率とは、薄帯の蒸発に使われるビームエネルギ
ーとフラッシュ穴通り抜はビームエネルギーとの比率を
高くすること)
(2−D)電子ヒーJ1のタイトビーム径Δy(cm)
と、薄帯幅よりは狭いスイープ幅△x(cm)とからフ
ラッンユ照射面積△x×ムyがきまり、薄帯物質の蒸発
までのエンタルピーΔH2’l□、≦l′J/g]、厚
さ及び比重が分かっていると、フラッシュに要する時間
△を一ΔH2’+8.Sメ照射面積メ厚さX比重/ビー
ム出力 となる。このΔLと4yとから、最高効率時の
走行速度V=乙y/乙tかきまるか、(主にふく射の)
放熱ロスとフラッノユ穴抜はビームロスなどがあるので
、実際の速度はこれより小となる。実際の最適速度は試
行して決める。なお上記のXスィーブには高速(500
Hz)高電圧スィーブを用いる。(Good efficiency means increasing the ratio of the beam energy used to evaporate the ribbon and the beam energy used to pass through the flash hole.) (2-D) Tight beam diameter Δy (cm) of electronic heater J1
From the sweep width △x (cm), which is narrower than the ribbon width, the flannel irradiation area △x If the size and specific gravity are known, the time required for flushing △ can be calculated as −ΔH2′+8. The formula is: S irradiation area, thickness x specific gravity/beam output. From this ΔL and 4y, can we determine the traveling speed at maximum efficiency V = Oy/Ot (mainly due to radiation)?
The actual speed will be smaller than this because of heat radiation loss and beam loss when drilling holes. The actual optimum speed is determined by trial. Note that the above X sweep has a high speed (500
Hz) using a high voltage sweep.
(2−E)ビーム電流を間欠的に与える方法もある。す
なわち照射部がフラッシュ蒸発したら直ちにビーム電流
をゼロとし、適当なデユーティ比(TL流イオンオフの
時間幅の比率)でこのビーム電流のオンオフを繰り返す
。この場合速度は(2−D)に比べてデユーティ比で遅
くなることになるが、ビームの被照射部からの平均ふく
射放熱もその分生となり 基盤への熱的影響を軽減でき
る。そのたぬ蒸発部と基盤の距離を近づけることができ
るので蒸着収率を向上できる。(2-E) There is also a method of applying beam current intermittently. That is, the beam current is set to zero immediately after flash evaporation of the irradiation part, and this beam current is turned on and off repeatedly at an appropriate duty ratio (ratio of the time width of TL flow ion off). In this case, the speed will be slower due to the duty ratio compared to (2-D), but the average radiant heat radiation from the irradiated part of the beam will also be generated, and the thermal influence on the substrate can be reduced. Since the distance between the evaporation section and the substrate can be brought closer, the evaporation yield can be improved.
なお場合によっては連続的速度Vでの薄帯送りのかわり
に、駒送り的にすることも出来る。すなわち、静止薄帯
にフラッシュビームを必要な短時間照射し、抜けたビー
ム穴(Δx×Δy)相当分に少し余裕をつけて駒送りし
、次々とこのフラッシュと駒送りを繰り返す。In some cases, instead of feeding the ribbon at a continuous speed V, it is also possible to feed the ribbon piece by piece. That is, the stationary ribbon is irradiated with a flash beam for a necessary short time, the frame is advanced with a little margin corresponding to the missed beam hole (Δx×Δy), and this flash and frame advance are repeated one after another.
以上の(1)と(2)との構成により、組成ずれの無い
電子ビームフラッシュ蒸着膜を連続的かっ成膜速度大で
効率よく量産することが出来る。With the configurations (1) and (2) above, it is possible to efficiently mass-produce electron beam flash vapor deposited films without compositional deviations continuously and at a high deposition rate.
「実 施 例」
1、軟磁性合金センダストは結晶性急冷薄帯にできるこ
とが知られてい。その蒸発のエンタルピーを純鉄のΔH
Bg、r−7、6K J / Eと同じとして近似し、
薄帯厚さ20ミクロン、比重8、使用電子ビームの出力
10キロワツト、照射面積4ykAX = 0,5cv
X3cmとして、 (2−D)の計算をすると、ロスが
ないとした時のフラッシュに要する時間At−〜0.0
2secかえられる。実際のΔ1=0.05sec程度
と推定すると、最高効率での薄帯走行速度V−Δy/乙
t=o、510゜05= l Ocm/s e cとな
り おおよその目安が得られる。これは0*8g/se
cの蒸発レートに対応している。センダスト蒸着膜はe
ooc。``Example'' 1. It is known that the soft magnetic alloy sendust can be formed into a crystalline quenched ribbon. The enthalpy of evaporation is ΔH of pure iron.
Bg, r-7, 6K approximated as the same as J/E,
Ribbon thickness 20 microns, specific gravity 8, output of electron beam used 10 kilowatts, irradiation area 4ykAX = 0.5cv
Assuming X3cm, calculating (2-D), the time required for flashing assuming no loss is At-~0.0
2 seconds can be changed. If the actual Δ1 is estimated to be about 0.05 sec, then the ribbon running speed at maximum efficiency V-Δy/t=o, 510°05=lOcm/sec can be obtained. This is 0*8g/se
It corresponds to the evaporation rate of c. Sendust vapor deposited film is e
ooc.
1時間の熱処理で良好な軟磁性を示す。熱処理等につい
ては文献(名書、応用磁気学会誌、12゜597.19
88)を参照されたい。Shows good soft magnetism after 1 hour of heat treatment. Regarding heat treatment, etc., refer to literature (classic book, Journal of the Applied Magnetics Society, 12゜597.19
88).
2、液体急冷法でアモルファス薄帯となり、その後の熱
処理で微結晶粒化し熱安定性の良い軟磁性を示すものの
例として Feヮy、g Cu 7 N b3S i
13.r 89合金(商品名ファインメット)があり、
薄帯としてスイッチング電源用、センサー用への応用が
期待されている。このアモルファス状態での薄帯(厚さ
20ミクロン、幅5 c m )をフラッシュ蒸発源と
して用い、その蒸着膜を5500で熱処理すると、高飽
和磁束密度高透磁率の微結晶薄膜となり、MIG型磁気
ヘッドあるいは積層型磁気ヘッドに用いる平かできる。2. An example of a material that becomes an amorphous ribbon by the liquid quenching method and becomes microcrystalline by subsequent heat treatment and exhibits soft magnetism with good thermal stability: Fey, g Cu 7 N b3S i
13. There is r89 alloy (trade name Finemet),
As a thin strip, it is expected to be applied to switching power supplies and sensors. Using this amorphous thin strip (thickness 20 microns, width 5 cm) as a flash evaporation source, and heat-treating the deposited film at 5500°C, it becomes a microcrystalline thin film with high saturation magnetic flux density and high magnetic permeability. It can be flattened for use in magnetic heads or laminated magnetic heads.
なおファインメットについては文献(山内、吉R:応用
f!i気学会誌、13,231.1989)を参照され
たい。Regarding Finemet, please refer to the literature (Yamauchi, Yoshi R: Applied F!i Ki Gakkai Journal, 13, 231.1989).
3 高飽和磁束密度高透磁率の微結晶軟磁性材料の別の
例として、Fe Ta C組成付近の”79
10 N
合金がありスパッタ法で薄膜化されている。これとなる
ようにTa膜厚を調節する。こり薄帯をフラッシュして
薄膜とし、微結晶化熱処理(約580°C)をして良軟
磁性を発現させることができ。3. Another example of a microcrystalline soft magnetic material with high saturation magnetic flux density and high magnetic permeability is "79" with a composition near FeTaC.
10N alloy, which is made into a thin film by sputtering. The Ta film thickness is adjusted to achieve this. The thin ribbon can be flashed to form a thin film, and it can be heat-treated for microcrystallization (approximately 580°C) to exhibit good soft magnetism.
2、と同様磁気ヘッドに用いることができる。なおFe
TaC膜の熱処理と軟磁性にかんしては文献(長谷用、
斎藤、応用磁気学会講演概要集25aD2.+989)
を参照されたい。2, it can be used for a magnetic head. Furthermore, Fe
Regarding the heat treatment and soft magnetism of TaC films, see the literature (for Hase,
Saito, Applied Magnetics Society Lecture Abstracts 25aD2. +989)
Please refer to
以上l。2.3 に於いて蒸発源薄帯として、それぞれ
結晶性のもの、アモルファスのもの、複合薄帯を用いる
軟磁性薄膜製造法を例として説明した。他の分野(硬磁
性、超伝導、半導体、誘電体等)のエレクトロニクス材
料薄膜についても、もしそれらの物質が薄帯あるいは複
合薄帯の形態にすることができるものであれば、この製
造法が可能である。また電子ビーム装置として、上記例
のトランスバース型を大型の自己加速型に変えれば、よ
り厚い薄帯でより高速の蒸着が可能であり、イオンブレ
ーティング的蒸着法を取り入れれば膜質の改善を計る事
も可能である。That's all. In Section 2.3, soft magnetic thin film manufacturing methods using crystalline, amorphous, and composite ribbons as evaporation source ribbons were explained as examples. This manufacturing method can also be used for thin films of electronic materials in other fields (hard magnetism, superconductivity, semiconductors, dielectrics, etc.) if the materials can be made into ribbons or composite ribbons. It is possible. Furthermore, if the transverse type in the above example is changed to a large-scale self-acceleration type electron beam device, it is possible to deposit a thicker thin strip at a higher speed, and if an ion blating type deposition method is adopted, the film quality can be improved. It is also possible to measure.
璽発明の効果」
以上説明したように、この発明は組成ずれなく連続的か
つ高成膜速度で蒸着薄膜を殖産できるので、例としてあ
げた軟磁性の場合では、数〜数十ミクロンの薄膜付けを
必要とする薄膜ヘット、MIGヘッド、積層ヘッドの生
産性向上に大いに寄与するものである。同様にして他の
エレクトロニクス分野での組成敏感な機能性膜の量産に
於いても、この発明すなわち同組成薄帯の電子ビームフ
ラッシュ蒸着による製膜法は有力な手段の一つとなるも
のである。``Effects of the Invention'' As explained above, this invention can produce thin films deposited continuously and at a high deposition rate without compositional deviation, so in the case of soft magnetism as an example, thin films of several to tens of microns can be deposited. This greatly contributes to improving the productivity of thin film heads, MIG heads, and laminated heads that require. Similarly, in the mass production of composition-sensitive functional films in other electronic fields, the present invention, that is, the film forming method using electron beam flash evaporation of a thin ribbon having the same composition, becomes one of the effective means.
第1図は本発明の蒸着膜製造装置の21−ス中心軸をふ
くむxz面の断面図、、第2図は薄帯の供給状況を示す
装置の斜視図(/%−スデツキ部を除いて描いである)
、第3図はビーム照射部通過薄帯止のフラッンユ抜は穴
の列をしめす。3は連続照射図面の浄書(内容にz更な
い
図 面
1:薄帯、2:N子ビーム、3:ハース、4:ハースデ
ツキ、5:ハースとデツキ間の薄帯通路、6゛フラッソ
コ穴通り抜はビーム、7:71−ス保才′L 図Fig. 1 is a cross-sectional view in the xz plane including the central axis of the vapor deposited film manufacturing apparatus of the present invention, and Fig. 2 is a perspective view of the apparatus showing the feeding status of the ribbon (excluding the /%-striped part). (It is a drawing)
, Figure 3 shows the rows of holes in the flanges of the thin strip that passes through the beam irradiation section. 3 is an engraving of the continuous irradiation drawing (Drawing with no additional details) 1: thin strip, 2: N beam, 3: hearth, 4: hearth deck, 5: thin strip passage between hearth and deck, 6゛ flat hole passage Without beam, 7:71-Shosai'L figure
Claims (1)
ビームとし、目的の薄膜と同じ組成を有する広幅(1c
m以上)の薄帯を水冷るつぼ(ハース)あるいは(フラ
ッシュ穴通過ビームの熱吸収水冷排熱用の)ハース的構
造部の上方を通過させて連続供給し、その薄帯を電子ビ
ームのフラッシュ蒸発のターゲットとする事を特徴とす
る蒸着薄膜の製造法。2.薄帯が液体急冷薄帯であるこ
とを特徴とする特許請求の範囲第1項に記載の薄膜製造
法。 3.薄帯が圧延薄帯であることを特徴とする特許請求の
範囲第1項に記載の薄膜製造法。3.薄帯が、主たる一
あるいは数成分が上記の第2項あるいは第3項の薄帯で
あり残りの一あるいは数成分がその薄帯の一面あるいは
両面上に積層された構造となっている複合多層薄帯であ
ることを特徴とする特許請求の範囲第1項に記載の薄膜
製造法。[Claims] 1. In the flash deposition thin film manufacturing method, the heating source is an electron beam, and a wide (1 cm) beam having the same composition as the target thin film is used.
A thin strip of diameter (more than m) is continuously fed by passing it over a water-cooled crucible (hearth) or a hearth-like structure (for heat absorption and water-cooled exhaust heat of the beam passing through the flash hole), and the thin strip is used for flash evaporation of the electron beam. A method for producing a vapor-deposited thin film characterized by targeting. 2. 2. The thin film manufacturing method according to claim 1, wherein the ribbon is a liquid quenched ribbon. 3. 2. The thin film manufacturing method according to claim 1, wherein the ribbon is a rolled ribbon. 3. A composite multilayer ribbon in which one or several main components are the ribbons in the second or third term above, and the remaining one or several components are laminated on one or both sides of the ribbon. The thin film manufacturing method according to claim 1, wherein the thin film is a thin ribbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19668090A JPH0483867A (en) | 1990-07-24 | 1990-07-24 | Formation of thin film on thin strip by electron beam flash deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19668090A JPH0483867A (en) | 1990-07-24 | 1990-07-24 | Formation of thin film on thin strip by electron beam flash deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0483867A true JPH0483867A (en) | 1992-03-17 |
Family
ID=16361810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19668090A Pending JPH0483867A (en) | 1990-07-24 | 1990-07-24 | Formation of thin film on thin strip by electron beam flash deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0483867A (en) |
-
1990
- 1990-07-24 JP JP19668090A patent/JPH0483867A/en active Pending
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