JPH0484467A - Manufacture of solar cell - Google Patents
Manufacture of solar cellInfo
- Publication number
- JPH0484467A JPH0484467A JP2199573A JP19957390A JPH0484467A JP H0484467 A JPH0484467 A JP H0484467A JP 2199573 A JP2199573 A JP 2199573A JP 19957390 A JP19957390 A JP 19957390A JP H0484467 A JPH0484467 A JP H0484467A
- Authority
- JP
- Japan
- Prior art keywords
- mold
- solar cell
- powder
- heat
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は太陽電池の製造方法に関し、特に、安価な太
陽電池基板の作製方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a solar cell, and particularly to a method for manufacturing an inexpensive solar cell substrate.
第2図は従来の太陽電池基板を作製するための耐熱製鋳
型にシリコン(Si)粉末を仕込んだ様子を示す断面図
であり、1は窒化ホウソ(以下、BNと称す)の鋳型で
器の部分、2は同じ<BNの鋳型で蓋の部分、3はSi
粉末である。Figure 2 is a cross-sectional view showing how silicon (Si) powder is charged into a heat-resistant mold for manufacturing a conventional solar cell substrate. Part 2 is the same<BN mold, lid part, 3 is Si
It is a powder.
また、第3図は第2図のSi粉末を仕込んだ鋳型を高温
で加熱するための炉の断面構造であり、1は第2図で示
した鋳型の器、2は鋳型の蓋、3はSi粉末、4は炉の
容器、5は炉の内部を高温に加熱するためのヒータ、6
はヒータ5の熱が外部に逃げないようにするための反射
板、7はSi粉末3が高温で融解したときに鋳型1.2
に馴染ませるためのおもり、8はおもり7と同様に鋳型
に圧力をかけるためのプレス機構である。Furthermore, Fig. 3 shows the cross-sectional structure of a furnace for heating the mold charged with the Si powder shown in Fig. 2 at a high temperature, where 1 is the mold vessel shown in Fig. 2, 2 is the lid of the mold, and 3 is the mold lid. Si powder, 4 is a furnace container, 5 is a heater for heating the inside of the furnace to a high temperature, 6
7 is a reflective plate to prevent the heat of the heater 5 from escaping to the outside, and 7 is a mold 1.2 when the Si powder 3 is melted at a high temperature.
A weight 8 is used to apply pressure to the mold, similar to the weight 7.
次に太陽電池基板の製法について説明する。Next, a method for manufacturing the solar cell substrate will be explained.
第2図の器1の凹の部分にSiの粉3を適量セットし、
フタ2を乗せる。このようにSi粉末3が仕込まれた鋳
型1.2を第3図の炉4の内部にセントする。そして、
ヒータ5に通電加熱することによって炉4の内部を高温
状態にする。反射板6はヒータ5の熱が容器の外に逃げ
ないように、また、炉内の温度分布を均一に保つように
設計されている。鋳型全体をSiの融点(1414°C
)以上に加熱しSi粉末3を融解せしめた後に温度を下
げSiを凝固させる。加熱中は溶融したSiを型になじ
ませるために、鋳型におもり7を乗せるかあるいはブレ
ス8で圧力を加える。凝固したSiは板状となるので、
鋳型の器1からこれを取り出す。その後、この基板にS
tのエビ成長や不純物拡散などの一般的な太陽電池製造
手段を施して太陽電池を完成する。Set an appropriate amount of Si powder 3 in the concave part of the container 1 in Fig. 2,
Place lid 2 on top. The mold 1.2 filled with the Si powder 3 in this manner is placed inside the furnace 4 shown in FIG. and,
By heating the heater 5 with electricity, the inside of the furnace 4 is brought to a high temperature state. The reflector plate 6 is designed to prevent the heat of the heater 5 from escaping to the outside of the container and to maintain a uniform temperature distribution within the furnace. The entire mold was heated to the melting point of Si (1414°C
) After heating to melt the Si powder 3, the temperature is lowered to solidify the Si. During heating, a weight 7 is placed on the mold or pressure is applied with a brace 8 in order to make the molten Si conform to the mold. Solidified Si becomes plate-shaped, so
Take this out from mold vessel 1. After that, S
A solar cell is completed by applying common solar cell manufacturing methods such as shrimp growth and impurity diffusion.
〔発明が解決しようとする課題]
従来の太陽電池の製造方法は以上のようであったので、
溶けたSiが鋳型1.2に融着することが多く、成形し
たSiの板を鋳型から離型しにくいという問題点があっ
た。[Problem to be solved by the invention] Since the conventional solar cell manufacturing method was as described above,
There was a problem in that the molten Si often fused to the mold 1.2, making it difficult to release the formed Si plate from the mold.
この発明は上記のような問題点を解消するためになされ
たもので、成形したSiを鋳型から容品に離型すること
ができ、太陽電池基板を安価にしかも簡単に製造するこ
とができる太陽電池の製造方法を提供することを目的と
する。This invention was made in order to solve the above-mentioned problems, and it is possible to release molded Si from a mold into a container, making it possible to manufacture solar cell substrates inexpensively and easily. The purpose is to provide a method for manufacturing batteries.
この発明にかかる太陽電池の製造方法は、耐熱製の鋳型
としてその表面に窒化ホウソのコーティングを施したも
のを用い、該鋳型にSi粉末を仕込み、加熱溶融して太
陽電池基板を作製するようにしたものである。The method for manufacturing a solar cell according to the present invention includes using a heat-resistant mold whose surface is coated with borax nitride, charging Si powder into the mold, and heating and melting it to produce a solar cell substrate. This is what I did.
この発明においては、耐熱製の鋳型の表面に窒化ホウソ
のコーティングを施すようにしたので、鋳型の表面が滑
らかになり、熔融したSiが鋳型に融着し難くなり、成
形したSiの板を離型しやすくなる。In this invention, since the surface of the heat-resistant mold is coated with borium nitride, the surface of the mold becomes smooth, making it difficult for molten Si to fuse to the mold, and allowing the molded Si plate to separate. It becomes easier to mold.
(実施例〕 以下、この発明の一実施例を図について説明する。(Example〕 An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例による太陽電池の製造方法に
用いる耐熱製鋳型を示しており、図において、1は例え
ばBN等からなるSiよりも高融点の耐熱製の鋳型の器
の部分、2は同じく耐熱製鋳型の蓋の部分、3は基板材
料としてのSi粉末、9は離型剤である。FIG. 1 shows a heat-resistant mold used in a solar cell manufacturing method according to an embodiment of the present invention. In the figure, 1 is a part of the heat-resistant mold made of, for example, BN, which has a higher melting point than Si. , 2 is the lid of the heat-resistant mold, 3 is Si powder as a substrate material, and 9 is a mold release agent.
第3図は第1図の鋳型を高温で加熱するための炉の断面
構造であり、1は第1図で示した鋳型の器、2は鋳型の
蓋、3は第1図で示したSi粉末、4は炉の容器、5は
炉の内部を高温にするためのヒータ、6はヒータ5の熱
が容器の外部に逃げないようにするための反射板、7は
Si粉末3が高温で融解したときに鋳型に馴染ませるた
めのおもり、8はおちり7と同様に鋳型に圧力をかける
ためのプレス機構である。Fig. 3 shows the cross-sectional structure of a furnace for heating the mold shown in Fig. 1 at high temperature, where 1 is the mold vessel shown in Fig. 1, 2 is the mold lid, and 3 is the Si silicon shown in Fig. 1. 4 is a furnace container, 5 is a heater to make the inside of the furnace high temperature, 6 is a reflection plate to prevent the heat of the heater 5 from escaping to the outside of the container, 7 is a Si powder 3 at high temperature. A weight 8 is a press mechanism for applying pressure to the mold, similar to the dust 7, to make it fit into the mold when melted.
次に太陽電池基板であるSi基板の作製方法について説
明する。Next, a method for manufacturing a Si substrate, which is a solar cell substrate, will be explained.
第1図の鋳型の器1の凹の部分にSiの粉3を適量セッ
トし、蓋2を乗せる。器の凹部分は0゜2〜1mm程度
に切り込んであり、この切込み量により、形成するSi
基板の厚さを調整することができる。An appropriate amount of Si powder 3 is set in the concave part of the mold vessel 1 shown in FIG. 1, and a lid 2 is placed on it. The concave part of the container is cut to a depth of about 0°2 to 1 mm, and the amount of cut is determined by the amount of the Si to be formed.
The thickness of the substrate can be adjusted.
次に器1とM2の表面に窒化ホウソ(BN)をコーティ
ングする。このコーティング方法としては、BNの粉末
を溶媒に溶かし込んだものをスプレー状にして吹き付け
る方法、これを直接はけ等で塗布する方法、あるいは、
さらにCVD法等を用いて非常に滑らかなりN膜をコー
ティングする方法がある。Next, the surfaces of vessels 1 and M2 are coated with borium nitride (BN). This coating method includes spraying BN powder dissolved in a solvent, directly applying it with a brush, etc.
Furthermore, there is a method of coating a very smooth N film using a CVD method or the like.
次に、Si粉末が仕込まれた鋳型を第3図の炉にセット
する。ヒータ5に通電加熱することによって炉の内部を
高温にする。反射板6はヒータ5の熱が容器の外に逃げ
ないように、また、炉内の温度分布を均一に保つように
設計されている。鋳型全体をSiの融点(1414℃)
以上に加熱し、Siを融解せしめた後に温度を下げSi
を凝固させる。加熱中はSiを型になじませるために鋳
型におもり7を乗せるか、プレス機8でプレスを行う。Next, the mold filled with Si powder is set in the furnace shown in FIG. By heating the heater 5 with electricity, the inside of the furnace is heated to a high temperature. The reflector plate 6 is designed to prevent the heat of the heater 5 from escaping to the outside of the container and to maintain a uniform temperature distribution within the furnace. The entire mold was heated to the melting point of Si (1414℃)
After heating to the above temperature to melt the Si, the temperature is lowered and the Si is melted.
solidify. During heating, a weight 7 is placed on the mold or pressing is performed using a press 8 to make the Si conform to the mold.
凝固したSiは板状となり、その後、器から取り出して
Si基板として用いる。The solidified Si becomes a plate, and is then taken out from the container and used as a Si substrate.
ここで、これまでにも離型剤というものは使用されてき
たが(たとえば、斉藤他、15回アイ・イー・イー・イ
ー フォトボルタインク スペシャリスツ カンファレ
ンス 1981年 576〜580頁(T、5aito
他、15th IEEE Photovoltaic
5pecialists Conference 19
81 pp、576〜580)に記載)、その離型剤に
は窒化珪素粉末(Si3N 4)が用いられており、本
実施例のようにBNを用いているものは全くなく、さら
に、実験の結果、窒化珪素はBNに比べ離型効果が良く
ないことが分かった。Here, mold release agents have been used in the past (for example, Saito et al., 15th IEE Photovoltaic Ink Specialists Conference, 1981, pp. 576-580 (T, 5aito
Others, 15th IEEE Photovoltaic
5specialists Conference 19
81 pp., 576-580), silicon nitride powder (Si3N4) is used as the mold release agent, and there is no one that uses BN as in this example, and furthermore, in the experiment. As a result, it was found that silicon nitride has a poorer mold release effect than BN.
即ち、窒化珪素の離型剤は窒化珪素粉末がそれぞれSi
の板と鋳型に融着し、Siと鋳型の接触を絶ち、離型時
に窒化珪素が分離することによって離型効果を果たして
いるのであるが、BNの場合、鋳型の表面を滑らかにし
てSiが鋳型に濡れないようになることによって離型効
果を果たしているものと推定される。That is, the silicon nitride mold release agent has silicon nitride powder and Si
Silicon nitride fuses to the plate and mold, breaks contact between Si and the mold, and separates during mold release to achieve the mold release effect. However, in the case of BN, the surface of the mold is smoothed and the Si is released. It is presumed that the mold release effect is achieved by preventing the mold from getting wet.
従って、離型剤として窒化珪素を用いた場合は毎回離型
剤を塗布する必要があるが、離型剤としてBNを用いた
場合にはコーティング塗布したBNがSiに融着しない
ので毎回塗布する必要がな(、鋳型の繰返し使用が可能
となる。Therefore, when silicon nitride is used as a mold release agent, it is necessary to apply the mold release agent every time, but when BN is used as the mold release agent, the coated BN does not fuse to the Si, so it is necessary to apply it every time. (The mold can be used repeatedly.)
次に、第4図に離型効果の説明をする。第4図(a)は
BNの器に直接溶融Siが接触しているときの説明図で
ある。BHの鋳型は機械加工によって作製されるため、
表面を拡大してみると第4図(a)に示すように大きな
凹凸構造になっている。一般にBNはSiと反応しにく
いと言われているが、溶融Siが凹凸構造の中に入り込
んだり、さらには所々で11のように溶融SiがBNの
鋳型の中に浸透してしまう現象が観察された。このよう
な場合、Si板は鋳型から容易に離型することは難しか
った。Next, the mold release effect will be explained with reference to FIG. FIG. 4(a) is an explanatory diagram when molten Si is in direct contact with a BN vessel. BH molds are made by machining, so
When the surface is enlarged, it has a large uneven structure as shown in FIG. 4(a). Although it is generally said that BN does not easily react with Si, it has been observed that molten Si penetrates into the uneven structure, and in some places, molten Si penetrates into the BN mold as shown in 11. It was done. In such cases, it was difficult to easily release the Si plate from the mold.
そこで第4図(b)に示すようにBNからなる鋳型の表
面にBNでできた離型剤9を塗布すると、鋳型の表面が
滑らかになり鋳型とSi板は反応することがなくなり、
この結果、成形した81基板を非常に離型しやすくなっ
た。Therefore, as shown in FIG. 4(b), when a mold release agent 9 made of BN is applied to the surface of a mold made of BN, the surface of the mold becomes smooth and there is no reaction between the mold and the Si plate.
As a result, it became very easy to release the molded 81 substrate.
このように本実施例では耐熱製の鋳型の表面にBNをコ
ーティングするようにしたので、鋳型の表面が滑らかに
なり、Si基板が鋳型と反応しなくなるので成形したS
i基板を容易に鋳型から離型することができる。さらに
、本実施例では離型剤としてBNを用いるようにしたの
で、成形したSi基板を鋳型から離型する際に離型剤が
Si基板に融着することがなく、鋳型に離型剤を毎回コ
ーティングする必要がなく連続使用が可能である。In this example, the surface of the heat-resistant mold was coated with BN, so that the surface of the mold became smooth and the Si substrate did not react with the mold.
The i-substrate can be easily released from the mold. Furthermore, since BN was used as the mold release agent in this example, the mold release agent was not fused to the Si substrate when the molded Si substrate was released from the mold. Continuous use is possible as there is no need to coat each time.
なお、上記実施例では鋳型の材料にBNを用いたが、こ
れはSiの融点に耐えることができる材料であればよく
、BNの他ムこ、例えば、窒化珪素、炭素、石英、炭化
珪素、アルミナ等が考えれらる。In the above embodiments, BN was used as the mold material, but any material that can withstand the melting point of Si may be used, and other materials other than BN, such as silicon nitride, carbon, quartz, silicon carbide, etc. Possible materials include alumina.
また、上記実施例では離型剤としてBNを用い、これを
鋳型に1層のみコーティングする例について示したが、
本実施例はこれに限定されるものではなく、例えばBN
を2層コーティングしてもよく、また基板上に5iiN
a、BNを順次コーティングして2層コーティング構造
としてもよ(、さらには、これらの組合せにより多層構
造としてもよく、上記実施例と同様の効果を奏する。In addition, in the above example, an example was shown in which BN was used as a mold release agent and only one layer was coated on the mold.
This embodiment is not limited to this, for example, BN
Two layers of 5iiN may be coated on the substrate.
A, BN may be sequentially coated to form a two-layer coating structure (or a combination of these may form a multi-layer structure, and the same effects as in the above embodiments can be obtained.
[発明の効果]
以上のように、この発明では耐熱製の鋳型として表面に
BNのコーティングを施したものを用いたので、融解し
たSiが鋳型と反応せず容易に離型できるようになると
いう効果がある。[Effects of the Invention] As described above, in this invention, a heat-resistant mold with a BN coating on the surface is used, so the molten Si does not react with the mold and can be easily released. effective.
さらに、Siと鋳型の表面のコーティングした離型剤は
反応しないため、Si基板を離型した際に離型剤が剥が
れることがなく、鋳型の繰り返し使用が可能になり、S
i基板を安価に作製できる効果がある。Furthermore, since Si does not react with the mold release agent coated on the surface of the mold, the mold release agent does not peel off when the Si substrate is released from the mold, making it possible to use the mold repeatedly.
This has the effect that the i-substrate can be manufactured at low cost.
また、離型効果が非常によいため、製造工程を簡略化す
ることができるという効果がある。Furthermore, since the mold release effect is very good, the manufacturing process can be simplified.
第1図はこの発明の一実施例による太陽電池製造方法に
用いる鋳型部分の断面側面図、第2図は従来の太陽電池
製造方法に用いる鋳型部分の断面側面図、第3図は鋳型
を加熱、プレスするための炉の断面側面図、第4図は本
発明及び従来例による太陽電池基板と鋳型の離型効果を
比較して説明した図である。
1は鋳型の器の部分、2は鋳型のフタの部分、3はSi
粉末、4は加熱炉の容器、5はヒータ、6は反射板、7
はおもり、8はプレス機構、9は離型剤、10は溶融S
i、11は熔融Siと鋳型の器が反応している部分であ
る。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a cross-sectional side view of a mold part used in a solar cell manufacturing method according to an embodiment of the present invention, FIG. 2 is a cross-sectional side view of a mold part used in a conventional solar cell manufacturing method, and FIG. 3 is a heating mold. , a cross-sectional side view of a furnace for pressing, and FIG. 4 is a diagram illustrating a comparison of the mold release effect of the solar cell substrate and mold according to the present invention and a conventional example. 1 is the container part of the mold, 2 is the lid part of the mold, 3 is Si
powder, 4 is a heating furnace container, 5 is a heater, 6 is a reflector, 7
is a weight, 8 is a press mechanism, 9 is a mold release agent, 10 is a molten S
i and 11 are the parts where the molten Si and the mold vessel are reacting. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
ン粉末を加熱融解し、太陽電池基板を作製する太陽電池
の製造方法において、 前記耐熱製の鋳型として、その表面に窒化ホウソのコー
ティングを施したものを用いたことを特徴とする太陽電
池の製造方法。(1) In a method for manufacturing a solar cell in which silicon powder is charged into a heat-resistant mold and the silicon powder is heated and melted to produce a solar cell substrate, the surface of the heat-resistant mold is coated with borax nitride. 1. A method for manufacturing a solar cell, characterized by using a solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2199573A JPH0484467A (en) | 1990-07-27 | 1990-07-27 | Manufacture of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2199573A JPH0484467A (en) | 1990-07-27 | 1990-07-27 | Manufacture of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0484467A true JPH0484467A (en) | 1992-03-17 |
Family
ID=16410082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2199573A Pending JPH0484467A (en) | 1990-07-27 | 1990-07-27 | Manufacture of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0484467A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360745A (en) * | 1992-09-08 | 1994-11-01 | Mitsubishi Denki Kabushiki Kaisha | Thin-film solar cell production method |
| WO1999017381A1 (en) * | 1997-09-26 | 1999-04-08 | Priesemuth W | Method and device for producing a wafer from a semiconducting material |
| JP2007332605A (en) * | 2006-06-13 | 2007-12-27 | Bridgestone Corp | Tube material for siphon drainage |
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| JPS57170578A (en) * | 1981-04-14 | 1982-10-20 | Toshiba Corp | Manufacture of crystalline substrate |
| JPS6123313A (en) * | 1984-07-11 | 1986-01-31 | Hoxan Corp | Formation of mold-releasing layer for manufacturing disc of polycrystalline si wafer |
| JPS62108515A (en) * | 1985-11-06 | 1987-05-19 | Osaka Titanium Seizo Kk | Manufacture of polycrystalline silicon semiconductor and casting mold |
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1990
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134235A (en) * | 1981-02-10 | 1982-08-19 | Agency Of Ind Science & Technol | Production of polycrystalline silicon semiconductor |
| JPS57170578A (en) * | 1981-04-14 | 1982-10-20 | Toshiba Corp | Manufacture of crystalline substrate |
| JPS6123313A (en) * | 1984-07-11 | 1986-01-31 | Hoxan Corp | Formation of mold-releasing layer for manufacturing disc of polycrystalline si wafer |
| JPS62108515A (en) * | 1985-11-06 | 1987-05-19 | Osaka Titanium Seizo Kk | Manufacture of polycrystalline silicon semiconductor and casting mold |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360745A (en) * | 1992-09-08 | 1994-11-01 | Mitsubishi Denki Kabushiki Kaisha | Thin-film solar cell production method |
| WO1999017381A1 (en) * | 1997-09-26 | 1999-04-08 | Priesemuth W | Method and device for producing a wafer from a semiconducting material |
| JP2007332605A (en) * | 2006-06-13 | 2007-12-27 | Bridgestone Corp | Tube material for siphon drainage |
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