JPH0485750U - - Google Patents
Info
- Publication number
- JPH0485750U JPH0485750U JP12888890U JP12888890U JPH0485750U JP H0485750 U JPH0485750 U JP H0485750U JP 12888890 U JP12888890 U JP 12888890U JP 12888890 U JP12888890 U JP 12888890U JP H0485750 U JPH0485750 U JP H0485750U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dicing line
- pressure sensor
- semiconductor pressure
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図はこの考案の一実施例である半導体圧力
センサのウエハの裏面図、第２図は第１図の断面
図、第３図は第１図のセンサチツプのアセンブリ
工程におけるチツプの断面図、第４図は従来の半
導体圧力センサのウエハの裏面図、第５図は第４
図の断面図、第６図は第４図のセンサチツプのア
センブリ工程におけるチツプの断面図である。
図において、１はウエハ、２はダイヤフラム、
３はダイシングライン相当部分、４はセンサチツ
プ、５はガラス台座を示す。なお、図中、同一符
号は同一、又は相当部分を示す。
FIG. 1 is a rear view of a wafer of a semiconductor pressure sensor that is an embodiment of the invention, FIG. 2 is a sectional view of FIG. 1, and FIG. 3 is a sectional view of the sensor chip in the assembly process of FIG. 1. Figure 4 is a back view of a wafer of a conventional semiconductor pressure sensor, and Figure 5 is a back view of a wafer of a conventional semiconductor pressure sensor.
FIG. 6 is a cross-sectional view of the sensor chip of FIG. 4 during an assembly process. In the figure, 1 is a wafer, 2 is a diaphragm,
Reference numeral 3 indicates a portion corresponding to the dicing line, 4 indicates a sensor chip, and 5 indicates a glass pedestal. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
補正 平３．６．１４
実用新案登録請求の範囲を次のように補正する
。Amendment 3/6/14 The scope of claims for utility model registration is amended as follows.
【実用新案登録請求の範囲】
ダイヤフラムエツチングされるウエハ裏面にお
いて、ダイヤフラムエツチングとともに、ダイシ
ングラインに相当する部分もダイシングライン幅
以上エツチングすることを特徴とする半導体圧力
センサ。[Claims for Utility Model Registration] A semiconductor pressure sensor characterized in that on the back side of a wafer where the diaphragm is etched, a portion corresponding to the dicing line is also etched by a width greater than the width of the dicing line.
Claims (1)
いて、ダイヤフラムエツチングとともに、ダイシ
ングラインに相当する部分もダイシングライン幅
以上エツチングすることを特徴とする半導体圧力
センサ。 A semiconductor pressure sensor characterized in that when a wafer is cut into a wafer for diaphragm etching, a portion corresponding to a dicing line is also etched by a width greater than the width of the dicing line along with the diaphragm etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12888890U JPH0485750U (en) | 1990-11-29 | 1990-11-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12888890U JPH0485750U (en) | 1990-11-29 | 1990-11-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0485750U true JPH0485750U (en) | 1992-07-24 |
Family
ID=31876326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12888890U Pending JPH0485750U (en) | 1990-11-29 | 1990-11-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0485750U (en) |
-
1990
- 1990-11-29 JP JP12888890U patent/JPH0485750U/ja active Pending