JPH0485845A - Inspecting method of semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for testing the electrical characteristics of a wafer-shaped semiconductor device using a probe needle.

[Problem to be solved by the invention] However, the conventional method has the following problems.

■In order to obtain stable contact resistance and to avoid damaging the electrode pad, it is necessary to optimize the probe needle load on the electrode pad. It is also necessary to ensure the positional accuracy of the probe needle for this purpose.

■Because there is mechanical contact with the electrode pad, the probe needle
It is easily damaged and difficult to maintain stable conduction for a long period of time.

■Since it is necessary to ensure the mechanical strength of the probe needle, there is a limit to the miniaturization of the probe needle, which limits the miniaturization of the corresponding electrode pad.

SUMMARY OF THE INVENTION In order to solve these conventional problems, it is an object of the present invention to provide an inspection method that provides stable electrical continuity without mechanical contact.

[Means for Solving the Problems] A method for testing a semiconductor device of the present invention includes applying a paste or liquid conductive material to an electrode pad of the semiconductor device in testing the electrical characteristics of a semiconductor device in a wafer state;
It is characterized by being interposed between the electrode pad and the probe needle to establish electrical continuity without direct contact.

[Example] FIG. 1 is a diagram showing the state of electrical continuity between an electrode pad of a semiconductor device and a probe needle in an example of the present invention, in which 1 is a probe needle, 2 is an electrode pad of a semiconductor device, 3
2 is a conductive material coated on the pad, and 4 is a semiconductor device surface protection film.

Here, as the conductive material 3, a paste kneaded with metal fibers or metal particles, a liquid metal such as mercury, or another electrolyte can be used.

As can be seen in FIG. 1, by interposing the conductive material 3, an electrical connection can be established between the probe needle and the electrode pad without mechanical contact.

FIG. 2 is a diagram showing a connection state of a plurality of pads in a similar embodiment. Here, the height of the tip of the probe needle is
There will always be a slight variation in height, but if this height variation δ is sufficiently smaller than the thickness t of the conductive material coated on the electrode pad, a good connection can be achieved at the same time even if there is a height variation δ in the probe needle. You will get it.

FIG. 3 is a diagram showing a case where the probe needle slightly deviates from the position of the pad due to some reason. Here, when a liquid is used as the conductive material (3), once the conductive material comes into contact with the probe needle, the surface tension of the liquid increases the contact area with the probe needle, making it possible to obtain a good conductive state.

[Effects of the Invention] As described above, according to the present invention, good conduction can be obtained without direct contact between the probe needle and the electrode pad of the semiconductor device in testing the electrical characteristics of a wafer-shaped semiconductor device. As a result, the following contents can be obtained.

■The quality of semiconductor devices is improved because no mechanical damage is caused to the electrode pads.

■Since there is no need to require the mechanical strength of the probe needle as in the past, the probe needle can be miniaturized, making it possible to perform inspections that correspond to the miniaturization of semiconductor devices and the increase in the number of bins.

■Mechanical damage to the probe needle is minimized, increasing the life of the probe needle.

■The quality of electrical property testing is improved because stable contact resistance is obtained.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an electrically conductive state between an electrode pad of a semiconductor device and a probe needle in an embodiment of the present invention. 1-11 Probe needle 2-m-Electrode pad 3-m-Conductive material 4-m-Semiconductor device surface protective film FIG. 2 is a diagram showing the connection state of a plurality of pads in a similar embodiment. δ--Height variation of probe needle 1--Coating thickness of conductive material FIG. 3 is a diagram showing a case where the probe needle is slightly shifted from the position of the electrode pad due to some reason. FIG. 4 is a diagram showing a state of electrical continuity between an electrode pad of a semiconductor device and a probe needle according to a conventional method. that's all

Claims (1)

[Claims] In testing the electrical characteristics of a semiconductor device in a wafer state, by applying a paste or liquid conductive material to the electrode pad of the semiconductor device and interposing it between the electrode pad and the probe needle, electricity can be measured without direct contact. 1. A method for testing a semiconductor device, which is characterized by establishing electrical continuity.