JPH0493943A - Reticule - Google Patents
ReticuleInfo
- Publication number
- JPH0493943A JPH0493943A JP2208526A JP20852690A JPH0493943A JP H0493943 A JPH0493943 A JP H0493943A JP 2208526 A JP2208526 A JP 2208526A JP 20852690 A JP20852690 A JP 20852690A JP H0493943 A JPH0493943 A JP H0493943A
- Authority
- JP
- Japan
- Prior art keywords
- mask material
- groove
- mask
- reticule
- edge parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000007261 regionalization Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 8
- 239000000428 dust Substances 0.000 abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 239000011651 chromium Substances 0.000 abstract description 2
- 229910000423 chromium oxide Inorganic materials 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はレティクルに関し、特に半導体装置の製造工程
において用いられるレティクルに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reticle, and particularly to a reticle used in the manufacturing process of semiconductor devices.
従来、この種のレティクルは、第３図に示すように、ガ
ラス基板ＩＢの片側にスパッタされた金属や金属酸化物
からなるマスク材２Ｂをリソグラフィ技術によりパター
ン形成グして形成していなために、パターンの形成され
た面は平面では無かった。Conventionally, this type of reticle has not been formed by patterning a mask material 2B made of metal or metal oxide sputtered on one side of a glass substrate IB using lithography technology, as shown in FIG. , the patterned surface was not flat.
上述した従来のレティクルは、パターン形成された面が
平坦となっていないのでレティクルの洗浄、とくにブラ
シスクラブ等でパターンのエツジ部にごみが付着したり
、洗浄回数が多くなるにつれてパターンのエツジ部にか
けが生じ、転写されるパターンの精度が低下するという
欠点がある。The above-mentioned conventional reticle has an uneven surface on which the pattern is formed, so when cleaning the reticle, especially when brush scrubbing, dust may adhere to the edge of the pattern, and as the number of cleanings increases, the edge of the pattern may become dry. This has the disadvantage that the accuracy of the transferred pattern decreases.
本発明のレティクルは、透明基板と、この透明基板に埋
め込まれたパターン形成用のマスク材とを含んで構成さ
れる。The reticle of the present invention includes a transparent substrate and a pattern-forming mask material embedded in the transparent substrate.
次に、本発明について図面を参照して説明する。第１図
は本発明の第１の実施例の断面図である。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a sectional view of a first embodiment of the invention.
第１図において、ガラス基板１には溝３が形成され、こ
の溝３の中にクロムや酸化クロム等のマスク材２が埋め
込まれてレティクルが構成されている。In FIG. 1, a groove 3 is formed in a glass substrate 1, and a mask material 2 such as chromium or chromium oxide is embedded in the groove 3 to form a reticle.
このレティクルの形成は、ガラス基板１上にフォトレジ
ストからなるマスクを形成し、このマスクを用いてガラ
ス基板１をエツチングして？１！３を形成したのち、そ
のままの状態でマスク材２をバイアススパッタリング法
にて堆積させて溝を埋め、次でマスクをはくすすること
により不要のマスク材を除去する方法を用いる。This reticle is formed by forming a mask made of photoresist on the glass substrate 1, and etching the glass substrate 1 using this mask. 1!3 is formed, mask material 2 is deposited as it is by bias sputtering method to fill the groove, and then the unnecessary mask material is removed by peeling off the mask.
このように構成された第１の実施例によれば、渭３内に
マスク材２が埋め込まれているため、洗浄によってマス
ク材２からなるパターンのエツジ部にごみが付着したり
、エツジ部がかけたりすることはない。According to the first embodiment configured in this way, since the mask material 2 is embedded in the edge 3, cleaning may cause dust to adhere to the edge portion of the pattern made of the mask material 2, or the edge portion may be damaged. I never run it.
第２図は本発明の第２の実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the invention.
この第２の実施例では、パターンを構成するマスク材２
Ａがガラス基板ＩＡ内に完全に埋め込まれているもので
あり、第１の実施例と同様の効果を有する他に、レティ
クル表面に付着したごみや汚れ等が露光の際デフォーカ
スとなり、ペリクルと同様な効果をもならすという利点
がある。In this second embodiment, the mask material 2 constituting the pattern is
A is completely embedded in the glass substrate IA, and in addition to having the same effect as the first embodiment, dust and dirt attached to the reticle surface become defocused during exposure, and the pellicle and It has the advantage of producing similar effects.
この第２の実施例を形成するには、例えば第１の実施例
と同様にガラス基板ＩＡに溝を形成し、この溝の中にマ
スク材２Ａを埋め込んだのち、このマスク材２Ａの表面
にＳｉ膜４を気相成長させればよい。Ｓｉ膜４が厚すぎ
たり完全に平坦面とならない場合は、Ｓｉ膜４をラッピ
ングして調整する。To form this second embodiment, for example, similarly to the first embodiment, a groove is formed in the glass substrate IA, a mask material 2A is embedded in this groove, and then the surface of this mask material 2A is The Si film 4 may be grown in a vapor phase. If the Si film 4 is too thick or does not have a completely flat surface, the Si film 4 is adjusted by lapping.
以上説明したように本発明は、透明基板にマスク材を埋
め込んでレティクルの両面を平坦化することにより、パ
ターンのエツジ部に付着するごみや汚れを防止出来ると
共に、エツジ部のがけをなくすことができるため、リソ
グラフィ工程における露光の際のウェハー上に転写され
るパターン欠陥を無すことが出来るという効果がある。As explained above, the present invention makes it possible to prevent dust and dirt from adhering to the edges of a pattern, and also to eliminate gaps at the edges, by embedding a mask material in a transparent substrate and flattening both sides of the reticle. This has the effect of eliminating pattern defects transferred onto the wafer during exposure in the lithography process.
第１図及び第２図は本発明の第１及び第１の実施例の断
面図、第３図は従来例の断面図である。
１．１Ａ、ＩＢ・・・ガラス基板、２．２Ａ、２Ｂ・・
・マスク材、３・・・溝、４・・・Ｓｉ膜。1 and 2 are cross-sectional views of first and first embodiments of the present invention, and FIG. 3 is a cross-sectional view of a conventional example. 1.1A, IB...Glass substrate, 2.2A, 2B...
-Mask material, 3...groove, 4...Si film.
Claims (1)
成用のマスク材とを含むことを特徴とするレティクル。A reticle comprising a transparent substrate and a mask material for pattern formation embedded in the transparent substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2208526A JPH0493943A (en) | 1990-08-07 | 1990-08-07 | Reticule |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2208526A JPH0493943A (en) | 1990-08-07 | 1990-08-07 | Reticule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0493943A true JPH0493943A (en) | 1992-03-26 |
Family
ID=16557646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2208526A Pending JPH0493943A (en) | 1990-08-07 | 1990-08-07 | Reticule |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0493943A (en) |
-
1990
- 1990-08-07 JP JP2208526A patent/JPH0493943A/en active Pending
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