JPH05102778A - Piezoelectric component - Google Patents

Piezoelectric component

Info

Publication number
JPH05102778A
JPH05102778A JP22869791A JP22869791A JPH05102778A JP H05102778 A JPH05102778 A JP H05102778A JP 22869791 A JP22869791 A JP 22869791A JP 22869791 A JP22869791 A JP 22869791A JP H05102778 A JPH05102778 A JP H05102778A
Authority
JP
Japan
Prior art keywords
ceramic
piezoelectric
substrate
vibration
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22869791A
Other languages
Japanese (ja)
Inventor
Mitsuru Tanaka
充 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP22869791A priority Critical patent/JPH05102778A/en
Publication of JPH05102778A publication Critical patent/JPH05102778A/en
Pending legal-status Critical Current

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

(57)【要約】 【目的】 この発明は、セラミック圧電基板からセラミ
ック封止基板への不要振動の伝播を抑え、これによりエ
ネルギー閉じ込め効果を発揮できる圧電部品を提供する
ことにある。 【構成】 セラミック圧電基板2とセラミック封止基板
4,4の端面電極11,11をセラミックよりヤング率
の低い導電接着剤により形成したものであり、該導電接
着剤の部分で不要振動が減衰され、封止基板4,4には
伝わらないので、例えばディスクリミネータの復調歪率
特性の向上、フィルタの高域側のスプリアスの低減、あ
るいはトラップの映像帯域内G.D.Tの向上などを図
ることができるなど、電気特性が向上する。
(57) [Abstract] [PROBLEMS] To provide a piezoelectric component capable of suppressing the propagation of unnecessary vibration from the ceramic piezoelectric substrate to the ceramic sealing substrate and thereby exerting an energy trapping effect. [Structure] The ceramic piezoelectric substrate 2 and the end electrodes 11 of the ceramic sealing substrates 4 and 4 are formed by a conductive adhesive having a Young's modulus lower than that of ceramic, and unnecessary vibration is attenuated at the conductive adhesive. , The signal is not transmitted to the sealing substrates 4 and 4, so that, for example, the demodulation distortion characteristic of the discriminator is improved, spurious on the high frequency side of the filter is reduced, or G.G. D. The electrical characteristics are improved such that T can be improved.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、各種電子回路に組み
込んで使用される圧電部品に関し、詳しくはエネルギー
閉じ込め形の圧電共振子における制振構造に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric component used by incorporating it into various electronic circuits, and more particularly to a vibration damping structure for an energy trap type piezoelectric resonator.

【0002】[0002]

【従来の技術】従来の厚みすべりエネルギー閉じ込め形
の圧電共振子は、例えばセラミック製圧電基板の両面に
対向電極を形成してなる圧電共振子をセラミック封止基
板により封止すると共に、上記対向電極を封止基板の端
面電極に導通させたものが知られており、上記セラミッ
ク封止基板を用いることにより、圧電チップ部品の耐熱
性の向上が図られるようになっている。
2. Description of the Related Art A conventional thickness-shear energy trapping type piezoelectric resonator is formed by sealing a piezoelectric resonator formed by opposing electrodes on both surfaces of a ceramic substrate made of ceramic, for example, with a ceramic sealing substrate, It is known that the electrode is electrically connected to the end surface electrode of the sealing substrate, and the heat resistance of the piezoelectric chip component can be improved by using the ceramic sealing substrate.

【0003】[0003]

【発明が解決しようとする課題】ところが、上記従来の
如く、セラミック圧電基板をセラミック封止基板で挟ん
だ構成では、圧電共振子の不要振動による弊害が生じ
る。即ち、チップの長短辺のサイズで決定される長さ方
向の高周波や輪郭振動等により、圧電基板の不要振動が
セラミック封止基板に伝播して、圧電基板と封止基板と
が共振し、電気特性が劣化する。また、圧電体基板2の
メインの漏れ振動による弊害、即ち、チップの振動部分
の両端において減衰されるべき振動が減衰されずに、該
振動部分に反射することによって、メインの振動に悪影
響を与える。
However, in the structure in which the ceramic piezoelectric substrate is sandwiched between the ceramic sealing substrates as in the above-mentioned conventional technique, there is a problem due to unnecessary vibration of the piezoelectric resonator. That is, unnecessary vibration of the piezoelectric substrate is propagated to the ceramic sealing substrate due to high frequency in the length direction determined by the size of the long and short sides of the chip, contour vibration, etc., and the piezoelectric substrate and the sealing substrate resonate, causing electrical resonance. The characteristics deteriorate. Further, the main leakage vibration is adversely affected by the main leakage vibration of the piezoelectric substrate 2, that is, the vibration to be attenuated at both ends of the vibration portion of the chip is not attenuated but is reflected to the vibration portion. ..

【0004】上記のように振動エネルギーの閉じ込め効
果が悪化することにより、例えばディスクリミネータに
おいては復調歪率波形に不要振動によるリップルが現れ
て、復調歪率特性が低下するなどの欠点が生じる。
As described above, the effect of confining the vibration energy is deteriorated, so that, for example, in a discriminator, a ripple due to unnecessary vibration appears in the demodulation distortion rate waveform, and the demodulation distortion rate characteristic is deteriorated.

【0005】この発明は、上記従来の課題を解消するた
めになされたもので、セラミック封止基板への不要振動
等の伝播を抑えることができ、これにより閉じ込め効果
を発揮できる圧電部品を提供することを目的とする。
The present invention has been made in order to solve the above-mentioned conventional problems, and provides a piezoelectric component capable of suppressing the propagation of unnecessary vibrations to the ceramic sealing substrate and thereby exerting a confinement effect. The purpose is to

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
に、この発明は、セラミック圧電基板の両面に対向電極
を設けた圧電共振子をセラミック封止基板により封止す
ると共に、上記対向電極を封止基板の端面電極に導通さ
せた圧電部品であり、上記端面電極をセラミックよりも
ヤング率の低い導電接着剤により形成したことを特徴と
するものである。
In order to solve the above problems, the present invention seals a piezoelectric resonator having opposing electrodes provided on both surfaces of a ceramic piezoelectric substrate with a ceramic sealing substrate, and A piezoelectric component electrically connected to an end face electrode of a sealing substrate, characterized in that the end face electrode is formed of a conductive adhesive having a Young's modulus lower than that of ceramics.

【0007】[0007]

【作用】この発明によれば、セラミック圧電基板をセラ
ミック封止基板で挟んだ構造において、両基板の端面電
極をセラミックよりもヤング率の低い導電接着剤により
形成して、端面電極そのものに制振効果を持たせるよう
にしたので、圧電基板の不要振動やメインの漏れ振動が
導電接着剤の部分で効率良く減衰され、封止基板には伝
わらない。従って、振動エネルギーの閉じ込め効果が向
上し、不要振動等による悪影響を極力抑えることができ
る。
According to the present invention, in the structure in which the ceramic piezoelectric substrates are sandwiched by the ceramic sealing substrates, the end face electrodes of both substrates are formed of a conductive adhesive having a Young's modulus lower than that of the ceramic, and the end face electrodes themselves are damped. Since the effect is provided, unnecessary vibration of the piezoelectric substrate and main leakage vibration are efficiently attenuated at the conductive adhesive portion and are not transmitted to the sealing substrate. Therefore, the effect of confining the vibration energy is improved, and the adverse effect due to unnecessary vibration or the like can be suppressed as much as possible.

【0008】[0008]

【実施例】以下、この発明の一実施例を添付図面に従っ
て説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the accompanying drawings.

【0009】図1及び図2において、1は厚みすべりエ
ネルギー閉じ込め形圧電共振子で、セラミック圧電基板
2の両面がセラミック封止基板4,4により封止されて
いる。10は外部電極で、端面電極11と、この端面電
極11に導通する上下電極12,12と、該端面電極1
1と上下電極12,12とを全面に亘って被覆する金属
メッキ層13とで構成されている。
In FIGS. 1 and 2, reference numeral 1 denotes a thickness-shear energy trapping type piezoelectric resonator in which both sides of a ceramic piezoelectric substrate 2 are sealed by ceramic sealing substrates 4 and 4. Reference numeral 10 denotes an external electrode, which is an end surface electrode 11, upper and lower electrodes 12 and 12 which are electrically connected to the end surface electrode 11, and the end surface electrode 1.
1 and the upper and lower electrodes 12, 12 with a metal plating layer 13 covering the entire surface.

【0010】上記端面電極11,11は、セラミック圧
電基板2とセラミック封止基板4,4の両端面にそれぞ
れ形成されると共に、セラミック圧電基板2の対向電極
1a,1bに個別に導通している。この端面電極11
は、セラミックよりもヤング率の低い電極材料の導電接
着剤により形成されている。通常のセラミックのヤング
率は1011N/m2 程度であり、これと比較して導電接
着剤のヤング率は、102 N/m2 程度と非常に低い。
この導電接着剤は、圧電基板2と封止基板4,4の両端
面のみ塗布されて、封止基板4,4への不要振動の伝播
を抑える働きをする。このような導電接着剤としては、
活性化タイプのものが使用され、これにより、端面電極
11の全体を金属メッキ処理することが可能である。
The end face electrodes 11 and 11 are formed on both end faces of the ceramic piezoelectric substrate 2 and the ceramic sealing substrates 4 and 4, respectively, and are individually electrically connected to the counter electrodes 1a and 1b of the ceramic piezoelectric substrate 2. .. This end face electrode 11
Is formed of a conductive adhesive of an electrode material having a Young's modulus lower than that of ceramics. The Young's modulus of ordinary ceramics is about 10 11 N / m 2 , and in comparison with this, the Young's modulus of conductive adhesives is very low, about 10 2 N / m 2 .
This conductive adhesive is applied only to both end surfaces of the piezoelectric substrate 2 and the sealing substrates 4 and 4, and serves to suppress propagation of unnecessary vibration to the sealing substrates 4 and 4. As such a conductive adhesive,
An activated type is used, which allows the entire end surface electrode 11 to be metal-plated.

【0011】また、セラミック封止基板4,4の上下面
に形成される上下電極12,12は、ヤング率よりも導
電性を重視して、銀等の半田付け性の良い材料が使用さ
れており、例えばスパッタリングあるいは蒸着により被
着される。
The upper and lower electrodes 12 and 12 formed on the upper and lower surfaces of the ceramic sealing substrates 4 and 4 are made of a material having good solderability such as silver, placing importance on conductivity rather than Young's modulus. And is applied, for example, by sputtering or vapor deposition.

【0012】さらに、上記端面電極11と上下電極1
2,12を被覆する金属メッキ層13は、両電極11,
12をそれぞれ保護する電極層になっている。
Further, the end face electrode 11 and the upper and lower electrodes 1
The metal plating layer 13 covering the electrodes 2 and 12 is
12 is an electrode layer for protecting each.

【0013】上記圧電部品を製造するにあたっては、図
3に示すように、セラミック圧電基板2をセラミック封
止基板4,4にて封止した後に、両者2,4の両端面に
エポキシ樹脂を塗布して端面電極11を形成すると共
に、セラミック封止基板4,4の上下面に銀をスパッタ
あるいは蒸着により被着して端面電極11に導通した上
下電極12,12を形成する。さらに、図4に示すよう
に、端面電極11及び上下電極12,12の外表面全体
に亘って半田付け性に優れた金属をメッキ処理して金属
メッキ層13を形成した後、リード線やボンディングワ
イヤなどを基板に半田付けする。
In manufacturing the above-mentioned piezoelectric component, as shown in FIG. 3, after sealing the ceramic piezoelectric substrate 2 with the ceramic sealing substrates 4 and 4, epoxy resin is applied to both end faces of both. Then, the end face electrode 11 is formed, and silver is deposited on the upper and lower surfaces of the ceramic sealing substrates 4 and 4 by sputtering or vapor deposition to form the upper and lower electrodes 12 and 12 which are electrically connected to the end face electrode 11. Further, as shown in FIG. 4, a metal having an excellent solderability is plated on the entire outer surface of the end face electrode 11 and the upper and lower electrodes 12, 12 to form a metal plating layer 13, and then a lead wire or a bonding wire is formed. Solder wires etc. to the board.

【0014】上記構成によれば、端面電極11,11を
エポキシ樹脂のようにセラミックより低ヤング率の導電
接着剤により形成して、端面電極11そのものに制振効
果を持たせたから、セラミック圧電基板2の不要振動や
メインの漏れ振動の伝播が端面電極11,11の部分で
十分に減衰されてセラミック封止基板4,4には伝わら
ないので、振動エネルギーの閉じ込め効果が向上する。
According to the above structure, the end face electrodes 11 and 11 are formed of a conductive adhesive having a Young's modulus lower than that of ceramic such as epoxy resin, and the end face electrode 11 itself has a vibration damping effect. The propagation of the unwanted vibration 2 and the main leakage vibration is sufficiently attenuated in the end face electrodes 11 and 11 and is not transmitted to the ceramic sealing substrates 4 and 4, so that the effect of confining the vibration energy is improved.

【0015】その結果、セラミック圧電基板2の電気特
性は劣化せず、良品率が向上するので、例えばディスク
リミネータにおいて復調歪率波形に不要振動によるリッ
プルが現れず、復調歪率特性の向上を図ることができ
る。さらにはフィルタの高域側スプリアスの低減や、ト
ラップの映像帯域内G.D.Tの向上を図ることができ
るなど、不要振動による悪影響を極力抑えることができ
る。
As a result, the electrical characteristics of the ceramic piezoelectric substrate 2 are not deteriorated and the non-defective rate is improved. For example, in the discriminator, the ripple due to unnecessary vibration does not appear in the demodulation distortion rate waveform, and the demodulation distortion rate characteristic is improved. Can be planned. Furthermore, the spurious of the high frequency side of the filter is reduced and the G.G. D. As a result, T can be improved, and the adverse effect of unnecessary vibration can be suppressed as much as possible.

【0016】尚、上記金属メッキ層13を省略し、図5
に示すように端面電極11と上下電極12,12のみで
外部電極10’を構成してもよい。
It should be noted that the metal plating layer 13 is omitted in FIG.
As shown in FIG. 5, the external electrode 10 ′ may be composed of only the end surface electrode 11 and the upper and lower electrodes 12, 12.

【0017】[0017]

【発明の効果】以上説明したように、この発明によれ
ば、セラミックよりヤング率の低い導電接着剤を端面電
極材料としたので、セラミック圧電基板をセラミック封
止基板で挟んだエネルギー閉じ込め形圧電共振子の構造
において、圧電体の不要振動やメインの漏れ振動が封止
基板に伝播されず、閉じ込め効果が向上する。その結
果、不要振動等による悪影響を極力小さくして、電気特
性の向上を図ることができる。
As described above, according to the present invention, since the conductive adhesive having a Young's modulus lower than that of the ceramic is used as the end face electrode material, the energy trap type piezoelectric resonance in which the ceramic piezoelectric substrate is sandwiched by the ceramic sealing substrates is used. In the child structure, unnecessary vibration of the piezoelectric body and main leakage vibration are not propagated to the sealing substrate, and the confinement effect is improved. As a result, it is possible to minimize the adverse effects of unnecessary vibration and improve the electrical characteristics.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例に係るエネルギー閉じ込め
形圧電共振子を示す斜視図。
FIG. 1 is a perspective view showing an energy trap type piezoelectric resonator according to an embodiment of the present invention.

【図2】図1のA−A線縦断面図。FIG. 2 is a vertical sectional view taken along the line AA of FIG.

【図3】端面電極と上下電極を形成した状態を示す工程
図。
FIG. 3 is a process drawing showing a state in which end face electrodes and upper and lower electrodes are formed.

【図4】金属メッキ層を形成した状態を示す工程図。FIG. 4 is a process drawing showing a state in which a metal plating layer is formed.

【図5】この発明の他の実施例を示す縦断面図。FIG. 5 is a vertical sectional view showing another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 圧電共振子 2 セラミック圧電基板 4 セラミック封止基板 10.10’ 外部電極 11 端面電極 12 上下電極 13 金属メッキ DESCRIPTION OF SYMBOLS 1 Piezoelectric resonator 2 Ceramic piezoelectric substrate 4 Ceramic sealing substrate 10.10 'External electrode 11 End surface electrode 12 Upper and lower electrodes 13 Metal plating

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 セラミック製圧電基板の両面に対向電極
を設けた圧電共振子をセラミック製封止基板により封止
すると共に、上記対向電極を封止基板の端面電極に導通
させてなる圧電部品において、上記端面電極をセラミッ
クよりもヤング率の低い導電接着剤により形成したこと
を特徴とする圧電部品。
1. A piezoelectric component in which a piezoelectric resonator having opposing electrodes provided on both surfaces of a ceramic piezoelectric substrate is encapsulated by a ceramic encapsulating substrate, and the opposing electrode is electrically connected to an end face electrode of the encapsulating substrate. A piezoelectric component, wherein the end face electrode is formed of a conductive adhesive having a Young's modulus lower than that of ceramics.
JP22869791A 1991-08-13 1991-08-13 Piezoelectric component Pending JPH05102778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22869791A JPH05102778A (en) 1991-08-13 1991-08-13 Piezoelectric component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22869791A JPH05102778A (en) 1991-08-13 1991-08-13 Piezoelectric component

Publications (1)

Publication Number Publication Date
JPH05102778A true JPH05102778A (en) 1993-04-23

Family

ID=16880385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22869791A Pending JPH05102778A (en) 1991-08-13 1991-08-13 Piezoelectric component

Country Status (1)

Country Link
JP (1) JPH05102778A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060628A (en) * 2010-08-07 2012-03-22 Nippon Dempa Kogyo Co Ltd Piezoelectric device and manufacturing method for the same
US9446989B2 (en) 2012-12-28 2016-09-20 United Technologies Corporation Carbon fiber-reinforced article and method therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6310594A (en) * 1986-07-01 1988-01-18 日本電気株式会社 High heat conductivity multilayer ceramic interconnection board
JPS6432371U (en) * 1987-08-20 1989-02-28
JPH03175711A (en) * 1989-12-04 1991-07-30 Murata Mfg Co Ltd Chip type electronic component

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6310594A (en) * 1986-07-01 1988-01-18 日本電気株式会社 High heat conductivity multilayer ceramic interconnection board
JPS6432371U (en) * 1987-08-20 1989-02-28
JPH03175711A (en) * 1989-12-04 1991-07-30 Murata Mfg Co Ltd Chip type electronic component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060628A (en) * 2010-08-07 2012-03-22 Nippon Dempa Kogyo Co Ltd Piezoelectric device and manufacturing method for the same
US9446989B2 (en) 2012-12-28 2016-09-20 United Technologies Corporation Carbon fiber-reinforced article and method therefor

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