JPH0511018A - Probe card - Google Patents

Abstract

(57) [Summary] [Object] The present invention relates to a probe card used in a test device for testing a semiconductor chip at a high temperature, in which a single card has a wide temperature range by changing the probe tip position according to the temperature. The purpose is to enable the temperature test of. [Structure] A curved portion 3a is formed on a probe 3 and fixed to a thin plate 2 with an insulating resin 4a. Then, the metal ring 5 having a large coefficient of thermal expansion is positioned inside the curved portion 3a and fixed to the probe 3 while being insulated by the insulating resin 4c.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe card used in a test device for testing a semiconductor chip under high temperature.

In recent years, the pads on a semiconductor chip have tended to become smaller due to the higher density and smaller size of semiconductor devices. In the temperature test performed before packaging of the semiconductor chip, the semiconductor chip thermally expands due to the high temperature, and the positions of the probe and the pad attached to the probe card of the test apparatus are displaced. Therefore, a probe card that can be used in a wide temperature range is desired.

[0003]

2. Description of the Related Art FIG. 4 shows a diagram for explaining a test using a conventional probe card. 4A shows a front view and FIG. 4B shows a bottom view. FIG. 4 (A),
In (B), the probe card 30 is one in which, for example, 16 probes 32 are arranged in groups of 4 each on a thin plate 31 having a rectangular hole at the center, and fixed by an insulating resin 33. Is. The arrangement of the probes 32 corresponds to the arrangement and number of pads 35 on the semiconductor chip 34 to be tested.

Further, a thin plate 31 is connected to a tester (not shown) on the surface opposite to the probe 32 via a contact member 36 and a conductor 37. Then, the pad 35 on the semiconductor chip 34 placed on the stage 38 which is heated to a high temperature
Then, the tip of the probe 32 is contacted and tested.

When performing the temperature test of the semiconductor chip 34 described above, the semiconductor chip 34 is heated by heating the stage 38. In this case, since the semiconductor chip 34 is thermally expanded and the position of the pad 35 is displaced to the outside,
In order to match the position of the probe card 30 with the probe 32, the pad 35 is formed to be slightly larger.

By the way, the number of pads 35 is increased and the shape is reduced due to the higher density and smaller size of semiconductor devices. Therefore, when performing a high temperature test, a plurality of probe cards 30 each having a probe 32 corresponding to the thermal expansion of the semiconductor chip 34 dedicated for temperature are prepared.

[0007]

However, as described above, when the probe card 34 dedicated to the temperature is prepared, a new probe card 30 has to be prepared when the test temperature is changed, which increases the cost. There is a problem of becoming.

Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to provide a probe card capable of performing a temperature test in a wide temperature range with a single card by changing the probe position according to the temperature. And

[0009]

In a probe card in which a predetermined number of probes that come into contact with pads on a semiconductor chip to be tested at high temperature are arranged, a curved portion is formed at a predetermined portion of the predetermined number of probes. In addition, a thermal displacement member that changes the bending degree of the curved portion of the probe according to the temperature to change the position of the pad contact tip of the probe is provided, and the thermal displacement member is appropriately black, or The problem can be solved by providing a heat absorbing plate on the displacement member or by providing a heating means for controlling the displacement thereof.

[0010]

As described above, a predetermined portion of a predetermined number of probes is bent, the degree of the bending is changed by the thermal displacement member, and the position of the pad contact tip of the probe is changed. That is, the thermal displacement member changes the tip position of the probe according to the temperature, and the probe tip is positioned on the pad displaced due to the thermally expanded semiconductor chip.

As a result, even if the heating temperature changes, the probe tip can always be positioned on the pad,
A single probe card enables temperature testing over a wide temperature range.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a block diagram of an embodiment of the present invention.
FIG. 1A is a front sectional view, and FIG. 1B is a bottom view. The connection to the test apparatus (tester) and the position of the semiconductor chip on the stage are the same as those in FIG.

In FIGS. 1A and 1B, a probe card 1 is provided with a square hole 2a at the center, and a predetermined pattern is formed on the surface of a thin tungsten plate 2, for example. A cage (not shown), the probe 3 is adhered to each of the patterns and is fixed by the insulating resin 4a. The probe 3 has, for example, tungsten, a curved portion 3a formed inside the insulating resin 4a, and a tip 3b formed in a pointed shape. The tip 3b contacts an electrode pad on a semiconductor chip (not shown) (see FIGS. 2B and 4).

On the other hand, inside the curved portion 3a of the probe 3, there is provided a metal ring 5 which is a thermal displacement member fixed to the insulating resin 4c while being insulated from the probe 3 by the insulating resin 4b. The metal ring 5 is made of a material having a coefficient of thermal expansion extremely higher than that of the tungsten probe 3, such as aluminum. The tip 3b is positioned while the metal ring 5 presses the curved portion 3a of the probe 3.

Next, FIG. 2 shows a diagram for explaining the position state of the probe of FIG. The state of FIG. 2A is a state in which heat does not affect the metal ring 5. Figure 2 now
As shown in (B), when the semiconductor chip 7 mounted on the stage 6 is heated by the stage 6, the semiconductor chip 7 thermally expands outward, and the electrode pad 8 on the semiconductor chip 6 is expanded. Is displaced to the outside.

At this time, the metal ring 5 is also thermally expanded outward by the radiant heat from the stage 6, and the curved portion 3 of the probe 3 is expanded.
Press a and shrink it so that the degree of curvature is small. As a result, the tip 3b of the probe 3 moves outward and changes its position. Therefore, the tip 3b of the probe 3 also moves along with the positional displacement of the electrode pad 8 of the semiconductor chip 3, so that the contact of the tip 3b with the electrode pad 8 can be ensured. Thus, a single (1
The number of probe cards 1 can be used for measurement in a wide temperature range.

In order to improve the heat absorption efficiency of the metal ring 5, although not shown, the surface of the metal ring 5 may be painted black, or the metal ring 5 may be provided with a heat absorbing plate separately.

Next, FIG. 3 shows a block diagram of another embodiment of the present invention. The probe card 1 of FIG. 3 is one in which, for example, a nichrome wire 9 is wound around the metal ring 5 of the probe card 1 of FIG. 1, and the nichrome wire 9 is controlled by the heating controller 10. The nichrome wire 9 and the heating controller 10 constitute a heating means.

In such a probe card 1, the heating controller 10 drives the nichrome wire 9 to forcibly heat the metal ring 5, and the metal ring 5 is heated according to the thermal expansion of the semiconductor chip 7 to be tested. Bring 5 to the desired temperature. That is, the thermal expansion of the metal ring 5 can be made to follow the thermal expansion of the semiconductor chip 7, and the tip 3b of the probe 3 can be positioned with higher accuracy.

In this case, the heating control section 10 may control the nichrome wire 9 with preset data. Further, although not shown, a temperature sensor is provided on the metal ring 5 or the semiconductor chip 7, and the temperature sensor The nichrome wire 9 may be controlled based on the detected value.

[0021]

As described above, according to the present invention, the bending portion is formed on the probe, and the thermal displacement member for changing the bending degree of the bending portion according to the temperature is provided. Since the temperature can be changed, the temperature test of the semiconductor chip in a wide temperature range can be performed with a single card, and the efficiency and cost of the temperature test can be improved.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an embodiment of the present invention.

FIG. 2 is a diagram for explaining a positional state of the probe of FIG.

FIG. 3 is a configuration diagram of another embodiment of the present invention.

FIG. 4 is a diagram for explaining a test using a conventional probe card.

[Explanation of symbols]

1 probe card 3 probes 3a curved part 3b tip 4a insulating resin 5 metal rings 6 stages 7 semiconductor chips 8 electrode pads 9 Nichrome wire 10 Heating controller

Claims (3)

[Claims] 1. A probe card in which a predetermined number of probes (3) contacting pads (8) on a semiconductor chip (7) to be subjected to a high temperature test are arranged, in a predetermined portion of the predetermined number of probes (3). Curved part (3
(a) is formed, and the degree of bending of the bending portion (3a) of the probe (3) is changed according to the temperature to change the position of the pad contact tip (3b) of the probe (3) ( 5) A probe card characterized by being provided. 2. The probe card according to claim 1, wherein the thermal displacement member (5) is black for absorbing heat. 3. The heat displacing member (5) is provided with a heat absorbing plate or heating means (9, 10) for controlling the displacement of the heat displacing member (5). The probe card described in 2.