JPH05121428A - Heterojunction bipolar transistor - Google Patents
Heterojunction bipolar transistorInfo
- Publication number
- JPH05121428A JPH05121428A JP3279073A JP27907391A JPH05121428A JP H05121428 A JPH05121428 A JP H05121428A JP 3279073 A JP3279073 A JP 3279073A JP 27907391 A JP27907391 A JP 27907391A JP H05121428 A JPH05121428 A JP H05121428A
- Authority
- JP
- Japan
- Prior art keywords
- type
- silicon carbide
- polycrystalline silicon
- conductivity
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
(57)【要約】 （修正有）
【目的】 バイポーラトランジスタにおいて、エミッタ
層にα型炭化珪素、ベース層に多結晶炭化珪素を使用し
たもので耐熱性に優れた、高速のバイポーラトランジス
タを提供する。
【構成】 ヘテロ接合バイポーラトランジスタは、一導
電型α型ＳｉＣ層と、該一導電型α型ＳｉＣ層上に積層
した他導電型多結晶炭化珪素層と、該他導電型多結晶炭
化珪素層上に多数の独立して形成した一導電型多結晶炭
化珪素層とからなり、前記一導電型α型ＳｉＣ層をエミ
ッタ領域、他導電型多結晶炭化珪素をベース領域、一導
電型多結晶炭化珪素層をコレクタ領域としてヘテロ接合
バイポーラトランジスタを構成する。
(57) [Summary] (Modified) [Purpose] To provide a high-speed bipolar transistor excellent in heat resistance by using α-type silicon carbide for the emitter layer and polycrystalline silicon carbide for the base layer in the bipolar transistor. . A heterojunction bipolar transistor includes a one conductivity type α-type SiC layer, another conductivity type polycrystalline silicon carbide layer laminated on the one conductivity type α type SiC layer, and another conductivity type polycrystalline silicon carbide layer. A plurality of independently formed one-conductivity-type polycrystalline silicon carbide layers, the one-conductivity-type α-type SiC layer being an emitter region, the other-conductivity-type polycrystalline silicon carbide being a base region, and one-conductivity-type polycrystalline silicon carbide. A heterojunction bipolar transistor is formed using the layer as a collector region.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、耐熱性に優れたＳiＣ
を使用したヘテロ接合バイポーラトランジスタに関す
る。BACKGROUND OF THE INVENTION The present invention relates to SiC having excellent heat resistance.
And a heterojunction bipolar transistor using.
【０００２】[0002]
【従来の技術】バイポーラトランジスタは従来から主と
して珪素を用いて製作され、広く実用に供せられてい
る。そして、高速バイポーラトランジスタとしてＳi微
細化技術を用いた珪素バイポーラトランジスタの他にヘ
テロ接合バイポーラトランジスタが提起され、アルミニ
ウムガリウム砒素(ＡlＧaＡs)／ガリウム砒素(ＧaＡs)
を中心に研究が行われている。また、Ｓiとヘテロ材料
(ＳiＣ)との接合によるバイポーラトランジスタの研究
も進んでいる。しかし、これらのバイポーラトランジス
タは耐熱性に欠け、従って、高温の場所では使用が不可
能である問題があった。2. Description of the Related Art Bipolar transistors have conventionally been manufactured mainly using silicon and have been widely put into practical use. As a high-speed bipolar transistor, a heterojunction bipolar transistor has been proposed in addition to the silicon bipolar transistor using the Si miniaturization technology, and aluminum gallium arsenide (AlGaAs) / gallium arsenide (GaAs) is proposed.
Research is being conducted mainly. Also, Si and hetero materials
Research on bipolar transistors by bonding with (SiC) is also in progress. However, these bipolar transistors lack heat resistance, and thus cannot be used in a high temperature place.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、上記従来の
欠点を解消して、耐熱性に優れたＳiＣを使用したバイ
ポーラトランジスタを提供せんとするものである。SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional drawbacks and provides a bipolar transistor using SiC having excellent heat resistance.
【０００４】[0004]
【課題を解決するための手段】上記した目的を達成する
ために、本発明にかかるヘテロ接合バイポーラトランジ
スタは、一導電型α型ＳiＣ層上に他導電型多結晶炭化
珪素層を積層し、かつ該他導電型多結晶炭化珪素層上に
多数の孤立した一導電型多結晶炭化珪素層を形成して、
前記一導電型α型ＳiＣ層をエミッタ領域、他導電型多
結晶炭化珪素をベース領域、一導電型多結晶炭化珪素層
をコレクタ領域に構成してなるものである。In order to achieve the above-mentioned object, a heterojunction bipolar transistor according to the present invention has a structure in which another conductivity type polycrystalline silicon carbide layer is laminated on one conductivity type α-type SiC layer, and A large number of isolated one-conductivity-type polycrystalline silicon carbide layers are formed on the other-conductivity-type polycrystalline silicon carbide layer,
The one conductivity type α-type SiC layer is formed as an emitter region, the other conductivity type polycrystalline silicon carbide is formed as a base region, and the one conductivity type polycrystalline silicon carbide layer is formed as a collector region.
【０００５】[0005]
【作用】したがって、本発明はヘテロ接合による高速性
を保ち、かつ、耐熱性に優れたバイポーラトランジスタ
を得るためにベース領域に多結晶炭化珪素を、エミッタ
領域にα型炭化珪素を使用するもので、炭化珪素は融点
が珪素やガリウム砒素に比べ融点が非常に高く、また、
バンドギャップはα型炭化珪素が２．８〜３．３eＶ
で、多結晶炭化珪素は約２．２eＶであるのでヘテロ接
合が形成でき、このことから、耐熱性に優れ、しかも、
高速のバイポーラトランジスタを提供することができる
ものである。Therefore, the present invention uses polycrystalline silicon carbide in the base region and α-type silicon carbide in the emitter region in order to obtain a bipolar transistor excellent in heat resistance while maintaining high speed due to the heterojunction. , Silicon carbide has a much higher melting point than silicon or gallium arsenide, and
The band gap is 2.8 to 3.3 eV for α-type silicon carbide
Since polycrystalline silicon carbide has a voltage of about 2.2 eV, a heterojunction can be formed. Therefore, it has excellent heat resistance and
It is possible to provide a high speed bipolar transistor.
【０００６】[0006]
【実施例】以下、本発明のバイポーラトランジスタを図
面に示す実施例について説明する。図１に示すヘテロ接
合バイポーラトランジスタは、一導電型α型ＳiＣ層
と、該一導電型α型ＳiＣ層上に積層した他導電型多結
晶炭化珪素層と、該他導電型多結晶炭化珪素層上に多数
の孤立して形成した一導電型多結晶炭化珪素層とからな
り、前記一導電型α型ＳiＣ層をエミッタ領域、他導電
型多結晶炭化珪素をベース領域、一導電型多結晶炭化珪
素層をコレクタ領域としてヘテロ接合バイポーラトラン
ジスタを構成する。Embodiments of the bipolar transistor of the present invention will be described below with reference to the drawings. The heterojunction bipolar transistor shown in FIG. 1 includes a one-conductivity α-type SiC layer, another conductivity-type polycrystalline silicon carbide layer laminated on the one-conductivity type α-SiC layer, and another conductivity-type polycrystalline silicon carbide layer. And a plurality of isolated one-conductivity-type polycrystalline silicon carbide layers, the one-conductivity-type α-SiC layer being an emitter region, the other-conductivity-type polycrystalline silicon carbide being a base region, and one-conductivity-type polycrystalline carbon carbide. A heterojunction bipolar transistor is formed by using the silicon layer as a collector region.
【０００７】上記の如き構造を製造する手順としては、
まず、６Ｈ型(α型)炭化珪素基板上にＣＶＤ(気相成長
法)によりＰ型多結晶炭化珪素を成長させる。ここで６
Ｈ型炭化珪素は、無添加でｎ型である。また、ＣＶＤで
は、反応炉内にＳi基板を載置した後、ジシラン(Ｓi２
Ｈ６)およびアセチレン(Ｃ２Ｈ２)を原料ガス、水素(Ｈ
２)をキャリアガスとして流し、約１０００℃、２０分
間の成長で１０００Å程度の膜厚を有する膜を成長させ
る。Ｐ型不純物としては、Ｂ、Ａl等が用いられる。The procedure for manufacturing the above structure is as follows:
First, P-type polycrystalline silicon carbide is grown on a 6H-type (α-type) silicon carbide substrate by CVD (vapor deposition method). 6 here
H-type silicon carbide is n-type with no addition. Further, in CVD, after the Si substrate is placed in the reaction furnace, disilane (Si 2
H 6 ) and acetylene (C 2 H 2 ) as source gas, hydrogen (H
2 ) is flown as a carrier gas to grow a film having a film thickness of about 1000Å by growing at about 1000 ° C. for 20 minutes. B, Al or the like is used as the P-type impurity.
【０００８】次に、さらにその上に同様のＣＶＤ法によ
り、ｎ型多結晶炭化珪素を成長させる。ｎ型不純物とし
ては、Ｐ、Ｎが用いられる。その後、通常のフォトリソ
グラフィーを用いエッチングを行なう。さらに、全面に
酸化膜を形成し、電極となる部分をフォトリソグラフィ
ーを用いたエッチングにより開口する。Next, n-type polycrystalline silicon carbide is grown on the same by the same CVD method. P and N are used as the n-type impurities. After that, etching is performed using ordinary photolithography. Further, an oxide film is formed on the entire surface, and a portion to be an electrode is opened by etching using photolithography.
【０００９】次に、開口部分に、電極金属(Ａl−Ｓi等)
を蒸着する。以上６Ｈ型炭化珪素をエミッタ、Ｐ型多結
晶炭化珪素をベース、ｎ型多結晶炭化珪素をコレクタと
することで、ｎｐｎ型バイポーラトランジスタが構成さ
れる。Next, an electrode metal (Al-Si, etc.) is formed in the opening.
Vapor deposition. An npn-type bipolar transistor is formed by using 6H-type silicon carbide as the emitter, P-type polycrystalline silicon carbide as the base, and n-type polycrystalline silicon carbide as the collector.
【００１０】また、以上の工程において、多結晶炭化珪
素形成には、シリコン酸化膜をマスクとした、選択成長
によっても可能である。また、図１のように、コレクタ
部を複数にすることにより、マルチコレクタバイポーラ
トランジスタを形成できる。Further, in the above steps, polycrystalline silicon carbide can be formed by selective growth using a silicon oxide film as a mask. Further, as shown in FIG. 1, a multi-collector bipolar transistor can be formed by providing a plurality of collector portions.
【００１１】[0011]
【発明の効果】以上の説明から明らかなように、本発明
は、一導電型α型ＳiＣ層上に他導電型多結晶炭化珪素
層が積層され、かつ該他導電型半導体層の表面に複数の
一導電型多結晶炭化珪素領域が形成されてなり、該導電
型α型ＳiＣ層をエミッタ領域、他導電型α型ＳiＣ層を
ベース領域、一導電型多結晶炭化珪素層をコレクタ領域
とするバイポーラトランジスタであり、ヘテロ接合によ
る高速性を保ち、かつ、耐熱性に優れたバイポーラトラ
ンジスタとして、今まで、シリコンやガリウム砒素のデ
バイスでは使用できなかった高温の場所での使用が可能
にし、しかも、高速、高利得の利点を有するものであ
る。As is apparent from the above description, according to the present invention, another conductivity type polycrystalline silicon carbide layer is laminated on one conductivity type α type SiC layer, and a plurality of layers are formed on the surface of the other conductivity type semiconductor layer. One conductivity type polycrystalline silicon carbide region is formed, the conductivity type α-type SiC layer is used as an emitter region, the other conductivity type α-type SiC layer is used as a base region, and one conductivity type polycrystalline silicon carbide layer is used as a collector region. As a bipolar transistor, which maintains high speed due to the heterojunction, and is excellent in heat resistance, it can be used in high temperature places that could not be used with silicon and gallium arsenide devices until now. It has the advantages of high speed and high gain.
【図１】 本発明にかかるバイポーラトランジスタの断
面図である。FIG. 1 is a cross-sectional view of a bipolar transistor according to the present invention.
１ ｎ型６ＨＳiＣ基板 ２ Ｐ型polyＳiＣ ３ ｎ型polyＳiＣ ４ 絶縁膜 ５ 電極金属 1 n-type 6 HSiC substrate 2 P-type polySiC 3 n-type polySiC 4 insulating film 5 electrode metal
Claims (1)
晶炭化珪素層を積層し、かつ該他導電型多結晶炭化珪素
層上に多数の孤立した一導電型多結晶炭化珪素層を形成
して、前記一導電型α型ＳiＣ層をエミッタ領域、他導
電型多結晶炭化珪素をベース領域、一導電型多結晶炭化
珪素層をコレクタ領域に構成してなるヘテロ接合バイポ
ーラトランジスタ。1. A multi-conductivity polycrystalline silicon carbide layer is laminated on one conductivity type α-type SiC layer, and a large number of isolated one-conductivity type polycrystalline silicon carbide layers are formed on the other conductivity type polycrystalline silicon carbide layer. A heterojunction bipolar transistor having the one conductivity type α-type SiC layer as an emitter region, the other conductivity type polycrystalline silicon carbide as a base region, and the one conductivity type polycrystalline silicon carbide layer as a collector region.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3279073A JPH05121428A (en) | 1991-10-25 | 1991-10-25 | Heterojunction bipolar transistor |
| US07/952,079 US5378921A (en) | 1991-10-21 | 1992-09-28 | Heterojunction multicollector transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3279073A JPH05121428A (en) | 1991-10-25 | 1991-10-25 | Heterojunction bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05121428A true JPH05121428A (en) | 1993-05-18 |
Family
ID=17606040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3279073A Pending JPH05121428A (en) | 1991-10-21 | 1991-10-25 | Heterojunction bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05121428A (en) |
-
1991
- 1991-10-25 JP JP3279073A patent/JPH05121428A/en active Pending
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