JPH05136332A - Semiconductor device - Google Patents

Abstract

(57) [Abstract] [Purpose] To obtain a semiconductor device capable of increasing the integration density with respect to the occupied area and reducing the wiring density. [Structure] First semiconductor chip extracted from first semiconductor chip 7
Film carrier tape 1 of the first outer lead 1
0 is bent in a U shape and is attached so as to face the first base film 2, and the second semiconductor chip 1 is formed on the back surface pattern 15 formed on the first base film 2.
A part of the second outer lead 21 to which 7 is connected is joined.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a plurality of semiconductor chips are bonded together using a film carrier tape and sealed with resin.

[0002]

2. Description of the Related Art Generally, a resin-encapsulated semiconductor device is obtained by encapsulating a single semiconductor chip with a resin. The resin-encapsulated semiconductor device such as a semiconductor memory device or a semiconductor controller is mounted on a printed wiring board called a mother board. It was mounted on a plane. Further, Japanese Unexamined Patent Publication No. 2-134859 discloses a technique for three-dimensionally stacking and mounting a plurality of semiconductor memory devices in which one semiconductor chip connected to a film carrier tape is resin-sealed on a printed wiring board.

By the way, in recent years, the proportion of each wiring drawn out from the resin-sealed semiconductor device in the printed wiring board tends to increase more and more. In particular, as the data bus has more bits, the number of data lines increases, and as the capacity of the memory increases, the number of address lines increases. On the other hand, electronic equipment equipped with a resin-encapsulated semiconductor device is generally required to be downsized, and the wiring density is further increased. Therefore, the wiring pattern of the printed wiring board must be made longer and thinner, and the circuit speed must be increased.
Improvement of noise resistance is restricted. In addition, Japanese Patent Laid-Open No. 2-13
In the technique of stacking and mounting a plurality of resin-sealed semiconductor devices three-dimensionally disclosed in Japanese Patent No. 4859, it is difficult to perform resin molding of individual semiconductor chips by transfer molding, and the resin wall thickness is thin. However, improvement in reliability of the resin-sealed semiconductor device is restricted.

The present invention has been made in order to solve the above-mentioned problems, and increases the integration density with respect to the occupied area, downsizes a printed wiring board on which a semiconductor device is mounted, and relaxes the wiring density. It is an object of the present invention to provide a highly reliable semiconductor device.

[0005]

The semiconductor device of the present invention comprises:
The first semiconductor chip is electrically connected to the first film carrier tape, and the first semiconductor device having the opening formed in the first film carrier tape and the second film carrier tape provided separately from the first semiconductor device. Electrically connecting the semiconductor chips,
A second semiconductor device in which a part of the outer lead of the second film carrier tape is bent in a U-shape, and the base film is attached so as to face the second semiconductor device is alloy-bonded in the opening and resin-sealed. And

[0006]

In other words, in the first semiconductor device in which the first semiconductor chip is electrically connected to the inner leads, a part of the outer leads is bent to form a back surface pattern from the first film carrier tape with single-sided wiring. , The second pattern in which this back surface pattern and the second semiconductor chip are electrically connected to the inner leads of the second film carrier tape.
By alloy-bonding the surface pattern formed on the base film of the semiconductor device to the opening, the first semiconductor device and the second semiconductor device can be integrated in a film carrier tape state. Then, the first semiconductor device and the second semiconductor device integrated in the film carrier tape state can be resin-sealed by transfer molding, and the reliability of the semiconductor device can be improved.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor device of the present invention will be described below with reference to the illustrated embodiments. 1 and 2 show a first embodiment of a semiconductor device of the present invention. FIG. 1 is an exploded perspective view and FIG. 2 is a sectional view. In FIG. 1, 1 is a first film carrier tape, 2 is a first film carrier tape 1
Is a first base film made of, for example, a polyimide resin. 3 and 3 are leads of a copper thin film formed on the surface of the first base film 2, and 4 is a device hole formed in the first base film 2. The leads 3 and 3 are formed so as to extend from the vicinity of the sides of the device hole 4 opposite to each other in the longitudinal direction of the first film carrier tape 1 to the ends of the film carrier tape substantially in parallel.

The leads 3, 3-form first inner leads 5, 5-which are provided so as to project inward from the end faces of the device holes 4 as they are. The first inner leads 5 and 5− are electrically connected to a pad electrode (not shown) on the first semiconductor chip 7 housed in the device hole 4 through the protruding electrodes 6 and 6− made of gold, for example. Connect to
It is configured to function as the first semiconductor device 8.
The other ends of the leads 3 and 3 are extended to the vicinity of the ends of the film carrier tape 1 so as to straddle the outer lead holes 9 formed in the first base film 2, and the outer lead holes are formed. Leads 3 and 3 formed on 9
Are the first outer leads 10 and 1 of the semiconductor device of the present invention.
It becomes 0-. The dashed-dotted line frame in FIG. 1 indicates a portion formed by the resin sealing portion 11. The lead 3 is cut so that the outer lead hole 9 becomes the first outer lead 10 having a predetermined length after the resin sealing. To be done. The support film 12 supporting the first base film 2 is also cut after the resin sealing.

Here, in the first base film 2 between the first inner lead 5 and the first outer lead 10,
An opening 13 is formed, and the leads 3, 3 that cross the opening 13 are alloy-bonded to the back surface pattern 15 formed on the second semiconductor device 14 described below.

Next, regarding the second semiconductor device 14,
A description will be given based on FIGS. 3 and 4. 3 and 4
3A and 3B are explanatory views of the second semiconductor device 14, where A is a plan view and B is a cross-sectional view. The second semiconductor device 14 is
It can be composed of the second film carrier tape 16 and the second semiconductor chip 17 which are separate bodies. The second base film 1 of this second film carrier tape 16
The leads 3, 3 formed on the lead 8 have substantially the same design as the leads 3, 3 forming the first semiconductor device 8 described above. This is because when semiconductor memory element chips having, for example, mirror inversion, that is, a line-symmetrical circuit forming surface are used for the first semiconductor chip 7 and the second semiconductor chip 16, address lines, input / output data lines, and power supply lines are used. Since the control lines (excluding the chip selection line) can be made common, the first
This is because the leads of the film carrier tape 1 and the second film carrier tape 16 can be joined to each other. The second semiconductor chip 17 is connected to the second inner leads 19 of the second film carrier tape 16 via the protruding electrodes, and the device hole 20 formed in the second base film 18 is the first hole. It has the same size as the device hole 4 of the film carrier tape 1.

Further, the rod-shaped base film 18 is provided in the middle portion of the second outer lead 21 extended from the second base film 18 to the vicinity of the end of the film carrier tape.
Is formed, and the rod-shaped base film 18 is obtained by cutting the unnecessary support film 12. The unnecessary second outer lead 21 is cut at the end of the rod-shaped base film 18. After that, the unnecessary support film 12 is further cut, so that the main portion forming the second semiconductor device 14 is cut out from the film carrier tape. The main part of the second semiconductor device 14 obtained in this way is then the second outer lead 2
A part of 1 is bent by 90, and the base film on the inner lead side and the rod-shaped base film 18 on the outer lead side are bonded with an epoxy adhesive so as to face each other. The second semiconductor device 14 is obtained.

In the second semiconductor device 14, the leads 3 formed on the one-side main surface of the second film carrier tape 16 are extended to the back surface opposite to the main surface. The back surface pattern 15 is formed on the rod-shaped base film 18.

The back surface pattern 15 turns the second semiconductor device 14 over so that the first semiconductor chip 7 and the second semiconductor chip are back-to-back, and as described above, the first film carrier tape 1 is formed. It is alloy-bonded to the lead 3 formed in the opening 13. Then, the rod-shaped base film 18 on which the back surface pattern 15 is formed is housed in the opening 13 of the first film carrier tape. In addition, after the second semiconductor device 14 is integrated with the first semiconductor device 7 in the film carrier tape state by alloy joining in this manner, resin sealing by transfer molding is performed in the film carrier state as described above. By separating from the support film 12 and the first outer lead 10, the semiconductor device of the present invention is completed.

The first film carrier tape 1 and the second film carrier tape 16 are coated with a photo-sensitive solder resist (not shown) for protecting their surfaces, and resin sealing is performed. It prevents resin leakage and lead migration at the time. Also,
The lead 3 exposed from the solder resist, that is, the first
Inner lead 5, second inner lead 19, first
The outer leads 10, the second outer leads 21, and the back surface pattern 15 are coated with a gold plating film.

According to such a semiconductor device, since the two first semiconductor chips 7 and the second semiconductor chips 17 are arranged back to back and resin-molded by transfer molding, the area occupied by the semiconductor device is large. It is possible to increase the circuit integration density of the semiconductor device by making it into a multi-chip without widening. The first inside of the semiconductor device
The electrical connection between the semiconductor chip 7 and the second semiconductor chip 17 is performed inside the resin sealing portion 11, and it is not necessary to use the wiring of the printed wiring board on which the semiconductor device is mounted. .. Therefore, a large-capacity circuit can be mounted without enlarging the wiring length and increasing the wiring density of the printed wiring board. Further, resin molding of the transfer mold can be performed, and the reliability of the semiconductor device can be improved.

Next, a modified example of the first embodiment of the semiconductor device of the present invention will be described with reference to FIG. FIG. 5 is a sectional view of a modification of the first embodiment. In this modification,
An example is shown in which a semiconductor control element chip is applied instead of the semiconductor memory element chip of the first semiconductor chip 7 in the first embodiment already described. That is, instead of increasing only the storage capacity of the semiconductor memory element, the semiconductor control element chip and the semiconductor memory element chip are integrated into one semiconductor device to form a control element having a large memory capacity. Here is an example.

In this modification, the lead patterns of the first film carrier tape 1 described in the first embodiment are formed on four sides, and the pad electrodes on the first semiconductor chip 7 are arranged near the four sides. It differs from the first embodiment in that it is arranged. However, the positions of the back surface pattern 15 corresponding to the second outer leads 21 of the second semiconductor chip 17 which is a semiconductor memory device chip and the first outer leads 10 of the first semiconductor chip 7 which is a semiconductor control device chip. The same can be obtained as in the first embodiment by alloying the same. Needless to say, the effect of this modification is the same as the effect of the first embodiment.

Next, a second embodiment of the semiconductor device of the present invention will be described with reference to FIG. FIG. 6 is an exploded perspective view for explaining the second embodiment of the semiconductor device of the present invention. According to FIG. 6, the first film carrier tape 1 constituting the first semiconductor device 8 has no inner lead, and the dummy lead 23 engaged with the first outer lead 10 has the opening 13 formed therein. The only difference from the first embodiment is that they are arranged over. By changing the circuit of the first semiconductor chip 7 and the second semiconductor chip 17 by connecting the dummy lead 23 and the back surface pattern 15 which becomes the input / output data line of the second semiconductor device 14 on the lower side. Therefore, twice the input / output data lines can be taken out from the first outer lead 10 of the semiconductor device of the present invention, and the storage capacity can be doubled.
The dummy lead 23 can be applied not only to the input / output data line described above but also to a chip selection line.

Finally, a third embodiment of the semiconductor device of the present invention will be described with reference to FIG. FIG. 7 is a sectional view of the third embodiment of the semiconductor device of the present invention. FIG. 7 shows an example in which the reinforcing plate 24 is inserted between the base film 18 and the rod-shaped base film 22 of the second semiconductor device 17. The reinforcing plate 24 is made of a thin plate such as alumina,
This thin plate may be a rod-shaped thin plate or a frame-shaped thin plate having substantially the same shape as the base film 18 around the second semiconductor chip 17. Further, the reinforcing plate 24 is fixed to the upper and lower base films with an epoxy adhesive. The reinforcing plate 24 serves as a spacer that enhances the mechanical strength of the second semiconductor device 14 and adjusts the height of the first inner lead 5 of the first semiconductor device 8 to the thickness of the semiconductor chip.

By inserting the reinforcing plate 24 in the present embodiment, the handling property of the second semiconductor device 17 is improved, and the mechanical strength of the semiconductor device after resin sealing can be increased. Further, it is possible to prevent the first inner lead 5 from short-circuiting with the semiconductor chip at the edge of the first semiconductor chip 7.

[0021]

To briefly explain the effect obtained by the present invention, it is possible to increase the circuit integration density inside a semiconductor device by making it into a multi-chip without increasing the occupied area of the semiconductor device. The electrical connection between the semiconductor chips inside the semiconductor device in which the resin molding of the transfer mold is performed is performed inside the semiconductor device and does not need to be performed by the printed wiring board on which the semiconductor device is mounted. It is possible to provide a semiconductor device capable of forming a large-capacity circuit while achieving downsizing and reduction of wiring density.
In addition, a highly reliable semiconductor device can be provided by performing resin sealing by transfer molding.

Furthermore, it becomes possible to switch the circuit to the outer lead of the semiconductor device depending on the presence or absence of the dummy lead, without changing the circuit of the semiconductor chip.
The circuits of the semiconductor device can be easily switched.

[Brief description of drawings]

FIG. 1 is an exploded perspective view of a first embodiment of a semiconductor device of the present invention.

FIG. 2 is a sectional view of a first embodiment of a semiconductor device of the present invention.

FIG. 3 is an explanatory view of a second semiconductor device 14 of the first embodiment of the semiconductor device of the present invention, A is a plan view and B is a sectional view.

FIG. 4 is an explanatory view of a second semiconductor device 14 of the first embodiment of the semiconductor device of the present invention, where A is a plan view and B is a sectional view.

FIG. 5 is a cross-sectional view of a modification of the first embodiment of the semiconductor device of the present invention.

FIG. 6 is an exploded perspective view of a second embodiment of the semiconductor device of the present invention.

FIG. 7 is a cross-sectional view of a third embodiment of the semiconductor device of the present invention.

[Explanation of symbols]

 1 1st film carrier tape 2 1st base film 3 lead 4 device hole 5 1st inner lead 6 protruding electrode 7 1st semiconductor chip 8 1st semiconductor device 9 outer lead hole 10 1st outer lead 11 Resin sealing part 12 Support film 13 Opening 14 Second semiconductor device 15 Back surface pattern 16 Second film carrier tape 17 Second semiconductor chip 18 Second base film 19 Second inner lead 20 Device hole 21 Second Outer lead 22 Bar-shaped base film 23 Dummy lead 24 Reinforcement plate

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H01L 23/50 S 9272-4M

Claims (2)

[Claims] 1. A first semiconductor device electrically connected to a first semiconductor chip to a first film carrier tape, the first semiconductor device having an opening formed in a base film of the first film carrier tape, and a separate semiconductor device. A second semiconductor chip is electrically connected to the second film carrier tape, a part of the outer lead of the second film carrier tape is bent in a U-shape, and the base films are attached so as to face each other. The semiconductor device of 2 is alloy-bonded at the opening,
A semiconductor device characterized by being resin-sealed. 2. The first film carrier tape has no inner leads, and dummy leads engaged with outer leads are arranged across the opening. Item 1. The semiconductor device according to Item 1.