JPH0514432Y2 - - Google Patents
Info
- Publication number
- JPH0514432Y2 JPH0514432Y2 JP20316686U JP20316686U JPH0514432Y2 JP H0514432 Y2 JPH0514432 Y2 JP H0514432Y2 JP 20316686 U JP20316686 U JP 20316686U JP 20316686 U JP20316686 U JP 20316686U JP H0514432 Y2 JPH0514432 Y2 JP H0514432Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thickness
- ceramic substrate
- ceramic
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000919 ceramic Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 229920000647 polyepoxide Polymers 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- -1 sputter etching) Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Fuses (AREA)
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案は基板型温度ヒユーズの改良に関するも
のである。[Detailed Description of the Invention] (Field of Industrial Application) The present invention relates to an improvement of a substrate type temperature fuse.
（従来の技術）
基板型温度ヒユーズは、耐熱性の絶縁基板上に
低融点金属のヒユーズエレメントを設け、このヒ
ユーズエレメントに対する絶縁層を基板上にモー
ルド被覆せる構成であり、保護すべき電気機器の
過電流による異常発生熱が絶縁基板を介して低融
点金属に伝達し、低融点金属の溶断により電気機
器への通電が遮断される。(Prior art) A substrate-type temperature fuse has a structure in which a fuse element made of a low-melting point metal is provided on a heat-resistant insulating substrate, and an insulating layer for this fuse element is molded onto the substrate. The abnormal heat generated by the overcurrent is transferred to the low-melting point metal via the insulating substrate, and the low-melting point metal is fused and power to the electrical equipment is cut off.
（考案が解決しようとする問題点）
従来、基板型温度ヒユーズの絶縁基板にはセラ
ミツクス板を、モールド樹脂被覆にはエポキシ樹
脂をそれぞれ使用しているが、セラミツクス絶縁
基板には機械的強度上、相当に厚いものを用いて
おり、絶縁基板の熱伝達性が低く、作動迅速性に
問題がある。(Problems to be solved by the invention) Conventionally, a ceramic plate is used for the insulating substrate of a substrate-type thermal fuse, and an epoxy resin is used for the mold resin coating. A fairly thick material is used, and the heat transfer properties of the insulating substrate are low, resulting in problems with the speed of operation.
本考案の目的は、上記セラミツクス基板の薄肉
化を図つて基板型温度ヒユーズの作動迅速性を向
上することにある。 An object of the present invention is to improve the operating speed of a substrate-type thermal fuse by reducing the thickness of the ceramic substrate.
（問題点を解決するための手段）
本考案に係る基板型温度ヒユーズは、低融点金
属のヒユーズエレメントをセラミツクス基板上に
設け、そのうえに硬化樹脂層をモールド被覆せる
温度ヒユーズにおいて、セラミツクス基板の厚み
を0.3〜1.5mmとし、硬化樹脂層の厚みをセラミツ
クス基板の1.5〜6.0倍としたことを特徴とする構
成である。(Means for Solving the Problems) The substrate type temperature fuse according to the present invention is a temperature fuse in which a fuse element made of a low melting point metal is provided on a ceramic substrate, and a cured resin layer is molded on the ceramic substrate. The thickness of the cured resin layer is 0.3 to 1.5 mm, and the thickness of the cured resin layer is 1.5 to 6.0 times that of the ceramic substrate.
（実施例） 以下、図面により本考案を説明する。(Example) The present invention will be explained below with reference to the drawings.
第１図は本考案に係る基板型温度ヒユーズを示
す上面説明図、第２図は第１図における−断
面説明図である。 FIG. 1 is an explanatory top view showing a substrate-type temperature fuse according to the present invention, and FIG. 2 is an explanatory cross-sectional view of FIG. 1.
図において、１はセラミツクス絶縁基板であ
り、厚みは0.3〜1.5mmとしてある。２，２は絶縁
基板上に設けた一対の電極であり、導電性ペース
トのスクリーン印刷、金属箔積層板のエツチング
（腐食液によるエツチング、スパツタエツチン
グ）、金属蒸着等によつて形成することができる。
３，３は各電極に接続したリード導体である。４
は電極間に橋設せるヒユーズエレメントとしての
低融点金属であり、該金属と電極との接続には、
溶接、はんだ付け等を用いることができる。５は
低融点金属上に被覆せるフラツクス層である。６
はセラミツクス基板上にモールド被覆せる硬化型
樹脂、例えばエポキシ樹脂であり、その厚みはセ
ラミツクス絶縁基板１の1.5〜6.0倍としてある。 In the figure, 1 is a ceramic insulating substrate, and the thickness is 0.3 to 1.5 mm. Reference numerals 2 and 2 denote a pair of electrodes provided on an insulating substrate, which can be formed by screen printing a conductive paste, etching a metal foil laminate (etching with a corrosive liquid, sputter etching), metal vapor deposition, etc. can.
3 and 3 are lead conductors connected to each electrode. 4
is a low melting point metal that serves as a fuse element that bridges between the electrodes, and the connection between the metal and the electrodes is as follows:
Welding, soldering, etc. can be used. 5 is a flux layer coated on the low melting point metal. 6
is a curable resin, such as an epoxy resin, which is molded and coated on the ceramic substrate, and its thickness is 1.5 to 6.0 times that of the ceramic insulating substrate 1.
（考案の効果）
上記、基板型温度ヒユーズは、セラミツクス絶
縁基板面を保護すべき電気機器に密接して使用す
る。而るに、セラミツクス基板の厚みを0.3〜1.5
mmとし、その基板厚みを著しく薄くしてあるの
で、機器発生熱を低融点金属に迅速に伝達でき、
ヒユーズの作動迅速性をよく保証できる。このよ
うにセラミツクス基板の厚さを薄くしたにもかか
わらず、エポキシ樹脂モールド被覆層の厚みをセ
ラミツクス絶縁基板の1.5〜6.0倍としているから
エポキシ樹脂モールド層に充分な機械的強度を付
与でき、この機械的強度の秀れたエポキシ樹脂モ
ールド層によりセラミツクス絶縁基板を補強でき
るので、基板型温度ヒユーズ全体の機械的強度を
充分に保証できる。このことは、以下に述べる感
温速度試験並びに荷重試験についての実施例と比
較例との対比からも確認できる。(Effect of the invention) The substrate-type temperature fuse described above is used in close proximity to an electrical device whose ceramic insulating substrate surface is to be protected. In fact, the thickness of the ceramic substrate should be 0.3 to 1.5.
mm, and the substrate thickness is extremely thin, allowing the heat generated by the equipment to be quickly transferred to the low melting point metal.
The quick operation of the fuse can be guaranteed. Even though the thickness of the ceramic substrate has been reduced in this way, the thickness of the epoxy resin mold coating layer is 1.5 to 6.0 times that of the ceramic insulating substrate, so sufficient mechanical strength can be imparted to the epoxy resin mold layer. Since the ceramic insulating substrate can be reinforced with the epoxy resin mold layer having excellent mechanical strength, the mechanical strength of the entire substrate-type temperature fuse can be sufficiently guaranteed. This can also be confirmed from the comparison between Examples and Comparative Examples regarding the temperature-sensitive speed test and load test described below.
ただし、ヒユーズエレメントには、Pb：31重
量％、Sn：19重量％、Bi：50重量％（融点98℃）
を使用した。感温速度試験においては、電流計を
介して100ボルトAC電源に接続した基板型温度ヒ
ユーズを加熱温度100℃のシリコンオイル中に浸
漬し、浸漬時から電流計指示が零になるまでの時
間を測定した。また、荷重試験においては、基板
型温度ヒユーズをエポキシ樹脂被覆面側を裏面側
として両端支持し、表面中央に荷重を先端が球面
で直径が３mmの鉄製ピンを介して載荷し、セラミ
ツクス基板が破断する際の荷重を求めた。 However, the fuse element contains Pb: 31% by weight, Sn: 19% by weight, Bi: 50% by weight (melting point 98°C).
It was used. In the temperature-sensitive speed test, a board-type temperature fuse connected to a 100-volt AC power source via an ammeter is immersed in silicone oil heated to 100°C, and the time from the time of immersion until the ammeter reading becomes zero is measured. It was measured. In addition, in the load test, a substrate-type temperature fuse was supported at both ends with the epoxy resin-coated side facing the back side, and a load was applied to the center of the surface via an iron pin with a spherical tip and a diameter of 3 mm, causing the ceramic substrate to break. The load when doing so was determined.
比較例 １
縦・横15mm×15mm、厚さ3.0mmのセラミツクス
基板の片面に、巾3.0mmの電極を6.0mmの間隔を隔
てて導電性ペーストの印刷・焼き付けにより形成
し、電極間に外径0.6mmのヒユーズエレメントを
橋設し、各電極に外径0.6mmのリード導体を接続
し、ヒユーズエレメント上にフラツクスを塗布
し、次いで、セラミツクス基板の片面上に厚さ
1.0mmのエポキシ樹脂層を被覆した。Comparative Example 1 Electrodes with a width of 3.0 mm were formed on one side of a ceramic substrate with a length and width of 15 mm x 15 mm and a thickness of 3.0 mm at intervals of 6.0 mm by printing and baking a conductive paste. Bridge a 0.6 mm fuse element, connect a lead conductor with an outer diameter of 0.6 mm to each electrode, apply flux on the fuse element, and then apply a thick layer on one side of the ceramic substrate.
Covered with a 1.0 mm epoxy resin layer.
この比較例品の感温試験結果（試料数20個の平
均値）は6.0秒であり、荷重試験結果（試料数20
個の平均値）は15Kgであつた。 The temperature sensitivity test result (average value of 20 samples) of this comparative example product is 6.0 seconds, and the load test result (average value of 20 samples) is 6.0 seconds.
The average value of each sample was 15 kg.
実施例 １
比較例１に対し、セラミツクス基板として、厚
さ1.5mmのものを使用し、エポキシ樹脂被覆層厚
さをセラミツクス基板厚さの1.5倍（2.25mm）と
した以外、比較例１に同じとした。この実施例品
の感温試験結果は2.5秒であり、荷重試験結果は
13Kgであつた。Example 1 Same as Comparative Example 1 except that a ceramic substrate with a thickness of 1.5 mm was used and the epoxy resin coating layer thickness was 1.5 times the thickness of the ceramic substrate (2.25 mm). And so. The temperature sensitivity test result of this example product is 2.5 seconds, and the load test result is
It weighed 13kg.
実施例 ２
比較例１に対し、セラミツクス基板として、厚
さ0.3mmのものを使用し、エポキシ樹脂被覆層厚
さをセラミツクス基板厚さの6.0倍（1.8mm）とし
た以外、比較例１に同じとした。この実施例品の
感温試験結果は1.0秒であり、荷重試験結果は10
Kgであつた。Example 2 Same as Comparative Example 1 except that a ceramic substrate with a thickness of 0.3 mm was used and the epoxy resin coating layer thickness was 6.0 times the thickness of the ceramic substrate (1.8 mm). And so. The temperature sensitivity test result of this example product is 1.0 seconds, and the load test result is 10 seconds.
It was Kg.
比較例 ２
セラミツクス基板の厚みを0.2mmにして比較例
１と同等の荷重試験結果を得るには、エポキシ樹
脂被覆層の厚さを13.0mmにする必要があり、基板
型温度ヒユーズとしての偏平性を保持できなかつ
た。Comparative Example 2 In order to obtain the same load test results as Comparative Example 1 with a ceramic substrate thickness of 0.2 mm, the thickness of the epoxy resin coating layer needs to be 13.0 mm, and the flatness as a substrate type temperature fuse is I couldn't hold it.
このように本考案に係る基板型温度ヒユーズに
おいては、機械的強度を充分に保持してセラミツ
クス絶縁基板の薄肉化を可能にするものであり、
セラミツクス基板を経ての低融点金属への熱伝達
性を向上できるから、温度ヒユーズの作動迅速性
をよく高揚できる。 As described above, the substrate-type temperature fuse according to the present invention maintains sufficient mechanical strength and allows the ceramic insulating substrate to be made thinner.
Since the heat transfer to the low melting point metal via the ceramic substrate can be improved, the operating speed of the temperature fuse can be greatly improved.
なお、本考案は、セラミツクス基板上に低融点
金属と共に抵抗体を付設する構成の基板型温度ヒ
ユーズにも適用できる。 The present invention can also be applied to a substrate type temperature fuse in which a resistor is provided along with a low melting point metal on a ceramic substrate.
第１図は本考案に係る基板型温度ヒユーズを示
す説明図、第２図は第１図における−断面図
である。
図において、１はセラミツクス基板、４は低融
点金属、６は硬化樹脂層である。
FIG. 1 is an explanatory diagram showing a substrate-type temperature fuse according to the present invention, and FIG. 2 is a cross-sectional view taken in FIG. 1. In the figure, 1 is a ceramic substrate, 4 is a low melting point metal, and 6 is a cured resin layer.
Claims (1)
ス基板上に設け、そのうえに硬化樹脂層をモール
ド被覆せる温度ヒユーズにおいて、セラミツクス
基板の厚みを0.3〜1.5mmとし、硬化樹脂層の厚み
をセラミツクス基板の1.5〜6.0倍としたことを特
徴とする基板型温度ヒユーズ。 In a temperature fuse in which a low melting point metal fuse element is provided on a ceramic substrate and a cured resin layer is molded onto it, the thickness of the ceramic substrate is 0.3 to 1.5 mm, and the thickness of the cured resin layer is 1.5 to 6.0 times that of the ceramic substrate. A board-type temperature fuse characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20316686U JPH0514432Y2 (en) | 1986-12-26 | 1986-12-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20316686U JPH0514432Y2 (en) | 1986-12-26 | 1986-12-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63106040U JPS63106040U (en) | 1988-07-08 |
| JPH0514432Y2 true JPH0514432Y2 (en) | 1993-04-16 |
Family
ID=31168239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20316686U Expired - Lifetime JPH0514432Y2 (en) | 1986-12-26 | 1986-12-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0514432Y2 (en) |
-
1986
- 1986-12-26 JP JP20316686U patent/JPH0514432Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63106040U (en) | 1988-07-08 |
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