JPH05149967A - Semiconductor acceleration sensor - Google Patents

Semiconductor acceleration sensor

Info

Publication number
JPH05149967A
JPH05149967A JP3339979A JP33997991A JPH05149967A JP H05149967 A JPH05149967 A JP H05149967A JP 3339979 A JP3339979 A JP 3339979A JP 33997991 A JP33997991 A JP 33997991A JP H05149967 A JPH05149967 A JP H05149967A
Authority
JP
Japan
Prior art keywords
acceleration sensor
semiconductor acceleration
circuit board
vibration absorbing
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3339979A
Other languages
Japanese (ja)
Inventor
Masatoshi Oba
正利 大場
Yoshiyuki Morita
善之 森田
Shiro Fujioka
志朗 藤岡
Koichi Hikasa
浩一 日笠
Masakazu Shiiki
正和 椎木
Katsumi Hosoya
克己 細谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Priority to JP3339979A priority Critical patent/JPH05149967A/en
Publication of JPH05149967A publication Critical patent/JPH05149967A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/14Structural association of two or more printed circuits
    • H05K1/144Stacked arrangements of planar printed circuit boards

Landscapes

  • Pressure Sensors (AREA)

Abstract

(57)【要約】 【目的】この発明は、ダンピング液を用いることなく、
外部からの衝撃を緩衝して、半導体加速度センサが破損
することなく正常な動作を維持することのできる半導体
加速度センサの提供を目的とする。 【構成】この発明は、半導体加速度センサを実装した回
路基板を、振動を吸収する長さに設定し該回路基板の回
路に接続する接続端子自体で保持して、接続端子自体が
外部からの衝撃を吸振緩衝し、さらに、接続端子自体に
吸振構造付加すること、さらに、吸振部材で回路基板を
保持すること、さらに、吸振部材に加えてゲル状絶縁物
質をハウジングに装填することで、外部からの衝撃を吸
振緩衝して、半導体加速度センサの破損を防止する。
(57) [Abstract] [Purpose] The present invention, without using a damping liquid,
An object of the present invention is to provide a semiconductor acceleration sensor capable of buffering an external shock and maintaining normal operation without damaging the semiconductor acceleration sensor. According to the present invention, a circuit board on which a semiconductor acceleration sensor is mounted is set to a length that absorbs vibration and held by a connection terminal itself for connecting to a circuit of the circuit board, and the connection terminal itself receives an impact from the outside. From the outside by adding a vibration absorbing structure to the connection terminal itself, further holding the circuit board by the vibration absorbing member, and loading the gel-like insulating material in addition to the vibration absorbing member into the housing. It absorbs and absorbs the shock of to prevent damage to the semiconductor acceleration sensor.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体基板をエッチ
ングして形成され、例えば、自動車の加速度を検出する
に使用されるような半導体加速度センサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration sensor which is formed by etching a semiconductor substrate and is used, for example, for detecting the acceleration of an automobile.

【0002】[0002]

【従来の技術】上述の半導体加速度センサは図6に示す
ように構成している。すなわち、半導体で構成される基
板の中央部にエッチングで重り部1を形成することで同
時に周囲に支持枠2を形成し、この支持枠2と重り部1
とを同辺で2箇所に梁部3,3で連結し、これら重り部
1および支持枠2の一側面と対向して固定基板4を対設
し、この固定基板4と前述の重り部1との間に所定の間
隙を形成して、重り部1が固定基板4との面方向に可動
可能に形成し、大きさとしては約3mm平方それ以下の小
型に構成している。
2. Description of the Related Art The semiconductor acceleration sensor described above is constructed as shown in FIG. That is, a weight 1 is formed in the center of a substrate made of a semiconductor by etching to simultaneously form a support frame 2 on the periphery, and the support frame 2 and the weight 1 are simultaneously formed.
And 2 are connected by beam portions 3 and 3 at the same side, and a fixed substrate 4 is provided so as to face the weight portion 1 and one side surface of the support frame 2, and the fixed substrate 4 and the weight portion 1 described above A weight gap 1 is formed so as to be movable in the plane direction with respect to the fixed substrate 4, and a small size of about 3 mm square or less is formed.

【0003】このように構成した半導体加速度センサ5
は加速によって重り部1が可動したときの重り部1と固
定基板4間の静電容量の変化、または、梁部3,3の歪
み量を検知して加速度を検出するが、構造としては梁部
3,3が衝撃に弱いので、この部分の破損があり、これ
を解決する1つの手段として、図7に示すように、この
半導体加速度センサ5を金属のケース6で囲繞して、内
部をシリコンオイル等のダンピング液7で充填する手段
が取られ、このようにケース化した半導体加速度センサ
5を、信号検出回路や増幅回路等の必要回路を搭載した
回路基板8に実装して構成していた。
The semiconductor acceleration sensor 5 having the above structure
Detects the acceleration by detecting the change in the capacitance between the weight portion 1 and the fixed substrate 4 when the weight portion 1 is moved by the acceleration, or the amount of strain of the beam portions 3 and 3. Since the parts 3 and 3 are vulnerable to impact, there is damage to this part, and as one means for solving this, as shown in FIG. 7, the semiconductor acceleration sensor 5 is surrounded by a metal case 6 to protect the inside. A means for filling with a damping liquid 7 such as silicon oil is taken, and the semiconductor acceleration sensor 5 thus formed into a case is mounted on a circuit board 8 on which necessary circuits such as a signal detection circuit and an amplification circuit are mounted. It was

【0004】しかし、上述のように、ケース化して内部
にダンピング液7を装填する半導体加速度センサ5の場
合、重り部1周囲の流路9が狭く、また、小型化される
ほど流路9が狭くなり、重り部1が加速の検出で可動す
る度にダンピング液7がその流路9を通過する際、ダン
ピング液7の実効粘度が増加して、半導体加速度センサ
5の周波数応答性に悪影響を与える問題点を有し、ま
た、ダンピング液の粘性が温度によって変化するためこ
の変化も上述の周波数応答性に悪影響を与える問題点を
有し、さらに、小さいケース内にダンピング液を封入す
ること自体に作業性が悪い問題点を有する。
However, as described above, in the case of the semiconductor acceleration sensor 5 in which the damping liquid 7 is loaded inside the case, the flow passage 9 around the weight portion 1 is narrow, and the smaller the size of the flow passage 9, the smaller the flow passage 9 becomes. When the damping liquid 7 becomes narrower and the damping liquid 7 passes through the flow path 9 each time the weight portion 1 moves by detecting the acceleration, the effective viscosity of the damping liquid 7 increases, which adversely affects the frequency response of the semiconductor acceleration sensor 5. In addition, there is a problem in that the viscosity of the damping liquid changes depending on the temperature, and this change also has a problem that the above frequency response is adversely affected. Furthermore, the damping liquid itself is enclosed in a small case. Has a problem of poor workability.

【0005】[0005]

【発明が解決しようとする課題】この発明は、ダンピン
グ液を用いることなく、外部からの衝撃を緩衝して、セ
ンサが破損することなく正常な動作を維持することので
きる半導体加速度センサの提供を目的とする。
SUMMARY OF THE INVENTION The present invention provides a semiconductor acceleration sensor which can buffer a shock from the outside without using a damping liquid and can maintain a normal operation without damaging the sensor. To aim.

【0006】[0006]

【課題を解決するための手段】この発明(請求項1)
は、半導体加速度センサを実装した回路基板を、振動を
吸収する長さに設定し該回路基板の回路に接続する接続
端子自体で保持した半導体加速度センサであることを特
徴とする。
The present invention (Claim 1)
Is a semiconductor acceleration sensor in which a circuit board on which the semiconductor acceleration sensor is mounted is set to a length that absorbs vibration and is held by a connection terminal itself for connecting to a circuit of the circuit board.

【0007】この発明(請求項2)は、半導体加速度セ
ンサを実装した回路基板を、所定の長さに設定し該回路
基板の回路に接続する接続端子自体で保持し、上記接続
端子の中間部に吸振構造を形成した半導体加速度センサ
であることを特徴とする。
According to the present invention (claim 2), the circuit board on which the semiconductor acceleration sensor is mounted is held by the connection terminal itself which is set to a predetermined length and connected to the circuit of the circuit board, and the intermediate portion of the connection terminal is provided. The semiconductor acceleration sensor is characterized in that a vibration absorbing structure is formed on it.

【0008】この発明(請求項3)は、半導体加速度セ
ンサを実装した回路基板を、弾性を持った吸振部材で保
持すると共に、該回路基板に対する接続配線を上記吸振
部材の吸振動作を阻害しない長さのフレキシブルリード
線で形成した半導体加速度センサであることを特徴とす
る。
According to the present invention (claim 3), the circuit board on which the semiconductor acceleration sensor is mounted is held by the elastic vibration absorbing member, and the connection wiring to the circuit board is long enough not to interfere with the vibration absorbing operation of the vibration absorbing member. It is a semiconductor acceleration sensor formed of a flexible lead wire.

【0009】この発明(請求項4)は、半導体加速度セ
ンサを実装した回路基板を、弾性を持った吸振部材で保
持すると共に、該回路基板に対する接続配線をマルチワ
イヤブラシで形成した半導体加速度センサであることを
特徴とする。
The present invention (claim 4) is a semiconductor acceleration sensor in which a circuit board on which a semiconductor acceleration sensor is mounted is held by a vibration absorbing member having elasticity, and a connection wiring to the circuit board is formed by a multi-wire brush. It is characterized by being.

【0010】この発明(請求項5)は、半導体加速度セ
ンサを実装した回路基板をハウジングで囲繞すると共
に、ハウジング内壁に保持し弾性を持った吸振部材に上
記回路基板を保持し、上記ハウジング内にゲル状絶縁物
質を充填した半導体加速度センサであることを特徴とす
る。
According to the present invention (claim 5), the circuit board on which the semiconductor acceleration sensor is mounted is surrounded by the housing, and the circuit board is held by the elastic vibration absorbing member which is held by the inner wall of the housing and is housed in the housing. It is a semiconductor acceleration sensor filled with a gel-like insulating material.

【0011】[0011]

【作用】この発明は、請求項1では、接続端子自体が外
部からの衝撃を吸振緩衝し、また、請求項2では、接続
端子自体に加えて吸振構造が外部からの衝撃を吸振緩衝
し、また、請求項3および請求項4は、吸振部材で外部
からの衝撃を吸振緩衝し、また、請求項5は、吸振部材
に加えてゲル状絶縁物質が外部からの衝撃を吸振緩衝
し、これら各請求項の構成による吸振緩衝によって、半
導体加速度センサの破損を防止する。
According to the present invention, in claim 1, the connection terminal itself absorbs and cushions an impact from the outside, and in claim 2, in addition to the connection terminal itself, the vibration absorbing structure absorbs and cushions an impact from the outside. In addition, in claims 3 and 4, the vibration absorbing member absorbs and cushions external impacts, and in addition to the vibration absorbing member, the gel insulating material absorbs and cushions external impacts. Damping of the semiconductor acceleration sensor is prevented by the vibration absorption buffer according to the structure of each claim.

【0012】[0012]

【発明の効果】この発明によれば、吸振部材にダンピン
グ液を使用しないので、ダンピング液の実効粘度の変
化、また、温度変化による粘度の変化で周波数の応答性
を損なうことがなく、簡単な構造で吸振緩衝作用が得ら
れ、正確な加速度を検出することができる。またダンピ
ング液の封入がないので、製作の作業性がよくなる。
According to the present invention, since the damping liquid is not used for the vibration absorbing member, a change in the effective viscosity of the damping liquid and a change in the viscosity due to a temperature change do not impair the frequency response, and the vibration is simple. The structure has a vibration absorbing cushioning effect, and accurate acceleration can be detected. Further, since the damping liquid is not enclosed, the workability of production is improved.

【0013】さらに、接続配線をフレキシブルリード線
やマルチワイヤブラシで構成することで、吸振部材の緩
衝性を損なうことがなく、狭い構造部分に対しても自由
に接続ができ、構造設計の自由度が向上する。
Further, by forming the connecting wiring with a flexible lead wire or a multi-wire brush, it is possible to freely connect even a narrow structure portion without impairing the shock absorbing property of the vibration absorbing member, and the degree of freedom in structural designing. Is improved.

【0014】[0014]

【実施例】この発明の実施例を以下図面に基づいて説明
する。図1は第1実施例の半導体加速センサユニットを
示し、半導体加速度センサ10は先の図6で示した従来
のセンサ5と同様に構成されていて、第1の回路基板1
1に実装されている。この第1の回路基板11は半導体
加速度センサ10の電極と接続する回路配線をプリント
して形成しており、必要最少限度の電子部品も搭載して
いる。一方、第2の回路基板12には、例えば、定電圧
回路、アンプ、比較回路等の検出回路等を構成する電子
部品13を搭載して樹脂等で形成されたハウジング14
の底部に固定されると共に、前述の第1の回路基板11
とは上下に配置して、垂直方向に所定の間隔、すなわ
ち、振動を吸収し得る長さに設定した接続端子15…で
両者の回路を接続すると共に、第1の回路基板11を振
動吸収可能に保持してセンサユニット16を構成してい
る。なお、図中17は外部に接続するリード線である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows the semiconductor acceleration sensor unit of the first embodiment, and the semiconductor acceleration sensor 10 has the same structure as the conventional sensor 5 shown in FIG.
It is implemented in 1. The first circuit board 11 is formed by printing circuit wirings connected to the electrodes of the semiconductor acceleration sensor 10, and is also mounted with the minimum necessary electronic components. On the other hand, on the second circuit board 12, for example, a housing 14 formed of resin or the like on which electronic components 13 constituting detection circuits such as a constant voltage circuit, an amplifier, a comparison circuit, etc. are mounted.
Is fixed to the bottom of the first circuit board 11 and
Can be connected vertically with a predetermined interval in the vertical direction, that is, by connecting terminals 15 ... Set to a length capable of absorbing vibration, and the first circuit board 11 can absorb vibration. The sensor unit 16 is configured to be held at. Reference numeral 17 in the drawing is a lead wire connected to the outside.

【0015】このように半導体加速度センサ10を構成
したときは、外部から受ける衝撃を接続端子15の材料
弾性で吸振緩衝して、半導体加速度センサ10のことに
梁部(図6参照)の破損を防止することができ、さら
に、回路基板が第1と第2の回路基板11,12に2分
割して上下に配置しているので、投影面積を減少させる
ことができて小型化に有効である。
When the semiconductor acceleration sensor 10 is constructed as described above, shocks received from the outside are absorbed and absorbed by the material elasticity of the connection terminal 15 to prevent the semiconductor acceleration sensor 10 from damaging the beam portion (see FIG. 6). Further, since the circuit board is divided into the first and second circuit boards 11 and 12 and arranged in the upper and lower parts, the projected area can be reduced, which is effective for downsizing. ..

【0016】図2は第2実施例の半導体加速度センサユ
ニットを示し、上述の第1実施例と同様の機能を有する
部分には同一の符号を付してその詳細を省略する。すな
わち、この第2実施例では、接続端子15…の中間部を
U字状に屈曲して吸振構造18を形成している。なお、
この吸振構造18の形状は、くの字状、コの字状、その
他の形状であるもよい。
FIG. 2 shows a semiconductor acceleration sensor unit according to the second embodiment. The parts having the same functions as those of the above-mentioned first embodiment are designated by the same reference numerals and the detailed description thereof will be omitted. That is, in the second embodiment, the vibration absorbing structure 18 is formed by bending the intermediate portion of the connection terminals 15 ... In a U shape. In addition,
The shape of the vibration absorbing structure 18 may be a dogleg shape, a U shape, or another shape.

【0017】このように構成した場合、前述の第1実施
例で説明した接続端子15…自体の吸振緩衝の作用に加
えて、吸振構造18の形状による吸振緩衝作用を得るこ
とができ、有効な吸振緩衝が得られ、半導体加速度セン
サ10の破損を防止する。
With this structure, in addition to the function of absorbing the vibration of the connection terminals 15 ..., which has been described in the first embodiment, the effect of absorbing the shape of the vibration absorbing structure 18 can be obtained, which is effective. Vibration absorption is obtained and damage to the semiconductor acceleration sensor 10 is prevented.

【0018】図3は第3実施例の半導体加速度センサユ
ニットを示し、前述の第1実施例と同様の機能を有する
部分には同一の符号を付してその詳細を省略する。すな
わち、この第2実施例では、第1の回路基板11を、例
えば、シリコンゴムのような弾性を有する吸振部材19
で保持し(吸振部材19の上下両端は適宜の接着手段で
両回路基板11,12に接着している)、両回路基板1
1,12の回路を接続するリード線はフレキシブルリー
ド線20…を使用すると共に、このフレキシブルリード
線20…の長さは吸振部材19の吸振緩衝作用を阻害し
ない必要最短の長さに設定している。
FIG. 3 shows a semiconductor acceleration sensor unit according to the third embodiment. The parts having the same functions as those of the first embodiment described above are designated by the same reference numerals and the detailed description thereof will be omitted. That is, in the second embodiment, the first circuit board 11 is provided with the vibration absorbing member 19 having elasticity such as silicon rubber.
(The upper and lower ends of the vibration absorbing member 19 are adhered to both the circuit boards 11 and 12 by appropriate adhering means).
Flexible lead wires 20 are used as the lead wires for connecting the circuits 1 and 12, and the length of the flexible lead wires 20 is set to the minimum necessary length that does not impede the vibration absorbing and damping function of the vibration absorbing member 19. There is.

【0019】このように構成した場合、吸振部材19が
外部からの衝撃に対して吸振緩衝作用を得ることがで
き、有効な吸振緩衝が得られ、半導体加速度センサ10
の破損を防止する。同時に吸振部材19が可動しても、
フレキシブルリード線20はその可動量より長いので、
緩衝作用を阻害することはない。
With this structure, the vibration-absorbing member 19 can obtain a shock-absorbing cushioning effect against an external impact, and an effective shock-absorbing cushioning can be obtained.
To prevent damage. Even if the vibration absorbing member 19 moves at the same time,
Since the flexible lead wire 20 is longer than its movable amount,
It does not interfere with the buffering effect.

【0020】図4は第4実施例の半導体加速度センサユ
ニットを示し、前述の第1実施例と同様の機能を有する
部分には同一の符号を付してその詳細を省略する。すな
わち、この第4実施例では、半導体加速度センサ10を
搭載した第1の回路基板11を、例えば、シリコンゴム
のような弾性を有する吸振部材21,21で挟持して第
2の回路基板12の上面に搭載し、両回路基板11,1
2の回路を接続するリード線は該両回路基板11,12
間に配置したマルチワイヤブラシ22を使用して吸振部
材21,21の吸振緩衝作用を阻害しないように設けて
いる。
FIG. 4 shows a semiconductor acceleration sensor unit according to the fourth embodiment. The parts having the same functions as those of the first embodiment described above are designated by the same reference numerals and the detailed description thereof will be omitted. That is, in the fourth embodiment, the first circuit board 11 on which the semiconductor acceleration sensor 10 is mounted is sandwiched between the vibration absorbing members 21 and 21 having elasticity, such as silicon rubber, to form the second circuit board 12. Mounted on the upper surface, both circuit boards 11, 1
The lead wire for connecting the circuit of FIG.
The multi-wire brush 22 arranged between them is used so as not to impede the vibration absorbing cushioning action of the vibration absorbing members 21, 21.

【0021】このように構成した場合、吸振部材21,
21が外部からの衝撃に対して吸振緩衝作用を得ること
ができ、有効な吸振緩衝が得られ、半導体加速度センサ
10の破損を防止する。同時に吸振部材21が可動して
も、マルチワイヤブラシ22の弾性で回路の接続を維持
することができ、加速度検出に支障がない。
With this structure, the vibration absorbing member 21,
21 can obtain a shock absorbing cushioning effect against the impact from the outside, an effective shock absorbing cushioning can be obtained, and the semiconductor acceleration sensor 10 is prevented from being damaged. At the same time, even if the vibration absorbing member 21 moves, the elasticity of the multi-wire brush 22 can maintain the circuit connection, which does not hinder the acceleration detection.

【0022】図5は第5実施例の半導体加速度センサユ
ニットを示し、前述の第1実施例と同様の機能を有する
部分には同一の符号を付してその詳細を省略する。すな
わち、この第5実施例では、ハウジング14の内壁面に
シリコンゴムのような弾性を有する吸振部材23を貼設
し、この吸振部材23に半導体加速度センサ10を搭載
した第1の回路基板11を挟持し、第2の回路基板(図
外)とはハウジング14の外部でリード線17で接続す
る。そして、ハウジング14内部にはシリコン樹脂のよ
うなゲル状絶縁物質24を充填している。
FIG. 5 shows a semiconductor acceleration sensor unit according to the fifth embodiment. The parts having the same functions as those of the first embodiment described above are designated by the same reference numerals and the detailed description thereof will be omitted. That is, in the fifth embodiment, the vibration absorbing member 23 having elasticity such as silicon rubber is attached to the inner wall surface of the housing 14, and the first circuit board 11 on which the semiconductor acceleration sensor 10 is mounted is mounted on the vibration absorbing member 23. It is sandwiched and connected to the second circuit board (not shown) by a lead wire 17 outside the housing 14. The inside of the housing 14 is filled with a gel insulating material 24 such as silicone resin.

【0023】このように構成した場合、吸振部材23,
23が外部からの衝撃に対して吸振緩衝作用をなすこと
に加えて、ゲル状絶縁物質24も吸振緩衝作用を行な
い、これらの作用で、有効な吸振緩衝が得られ、半導体
加速度センサ10の破損を防止する。なお、この発明は
上述の種々の実施例の構成のみに限定されるものではな
い。
With such a structure, the vibration absorbing member 23,
In addition to 23 having a shock absorbing and shock absorbing function against external impact, the gel insulating material 24 also has a shock absorbing and shock absorbing function, and by these functions, effective shock absorbing buffer is obtained and the semiconductor acceleration sensor 10 is damaged. Prevent. The present invention is not limited to the configurations of the various embodiments described above.

【図面の簡単な説明】[Brief description of drawings]

【図1】半導体加速センサユニットの第1実施例を示す
断面図。
FIG. 1 is a sectional view showing a first embodiment of a semiconductor acceleration sensor unit.

【図2】半導体加速センサユニットの第2実施例を示す
断面図。
FIG. 2 is a sectional view showing a second embodiment of a semiconductor acceleration sensor unit.

【図3】半導体加速センサユニットの第3実施例を示す
断面図。
FIG. 3 is a sectional view showing a third embodiment of a semiconductor acceleration sensor unit.

【図4】半導体加速センサユニットの第4実施例を示す
断面図。
FIG. 4 is a sectional view showing a fourth embodiment of a semiconductor acceleration sensor unit.

【図5】半導体加速センサユニットの第5実施例を示す
断面図。
FIG. 5 is a sectional view showing a fifth embodiment of a semiconductor acceleration sensor unit.

【図6】従来の半導体加速度センサを示す斜視図。FIG. 6 is a perspective view showing a conventional semiconductor acceleration sensor.

【図7】従来の半導体加速度センサを搭載したセンサユ
ニットの断面図。
FIG. 7 is a sectional view of a sensor unit equipped with a conventional semiconductor acceleration sensor.

【符号の説明】[Explanation of symbols]

10…半導体加速度センサ 11…第1の回路基板 12…第2の回路基板 13…電子部品 14…ハウジング 15…接続端子 18…吸振構造 19,21,23…吸振部材 20…フレキシブルリード線 22…マルチワイヤブラシ 24…ゲル状絶縁物質 DESCRIPTION OF SYMBOLS 10 ... Semiconductor acceleration sensor 11 ... 1st circuit board 12 ... 2nd circuit board 13 ... Electronic component 14 ... Housing 15 ... Connection terminal 18 ... Vibration absorbing structure 19,21,23 ... Vibration absorbing member 20 ... Flexible lead wire 22 ... Multi Wire brush 24 ... Gel-like insulating material

───────────────────────────────────────────────────── フロントページの続き (72)発明者 日笠 浩一 京都府京都市右京区花園土堂町10番地 オ ムロン株式会社内 (72)発明者 椎木 正和 京都府京都市右京区花園土堂町10番地 オ ムロン株式会社内 (72)発明者 細谷 克己 京都府京都市右京区花園土堂町10番地 オ ムロン株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Koichi Hikasa, No. 10 Hanazono Dodo-cho, Ukyo-ku, Kyoto City, Kyoto Prefecture Omron Co., Ltd. (72) Masakazu Shiiki, No. 10 Hanazono Todo-cho, Ukyo-ku, Kyoto Prefecture, Kyoto Co., Ltd. (72) Inventor Katsumi Hosoya, No. 10 Hanazono Dodocho, Ukyo-ku, Kyoto City, Kyoto Prefecture Omron Corporation

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】半導体加速度センサを実装した回路基板
を、振動を吸収する長さに設定し該回路基板の回路に接
続する接続端子自体で保持した半導体加速度センサ。
1. A semiconductor acceleration sensor in which a circuit board on which a semiconductor acceleration sensor is mounted is set to a length for absorbing vibration and held by a connection terminal itself for connecting to a circuit of the circuit board.
【請求項2】半導体加速度センサを実装した回路基板
を、所定の長さに設定し該回路基板の回路に接続する接
続端子自体で保持し、上記接続端子の中間部に吸振構造
を形成した半導体加速度センサ。
2. A semiconductor in which a circuit board on which a semiconductor acceleration sensor is mounted is set to a predetermined length and held by a connection terminal itself for connecting to a circuit of the circuit board, and a vibration absorbing structure is formed in an intermediate portion of the connection terminal. Acceleration sensor.
【請求項3】半導体加速度センサを実装した回路基板
を、弾性を持った吸振部材で保持すると共に、該回路基
板に対する接続配線を上記吸振部材の吸振動作を阻害し
ない長さのフレキシブルリード線で形成した半導体加速
度センサ。
3. A circuit board on which a semiconductor acceleration sensor is mounted is held by a vibration absorbing member having elasticity, and a connecting wire for the circuit board is formed by a flexible lead wire having a length that does not hinder the vibration absorbing operation of the vibration absorbing member. Accelerated semiconductor acceleration sensor.
【請求項4】半導体加速度センサを実装した回路基板
を、弾性を持った吸振部材で保持すると共に、該回路基
板に対する接続配線をマルチワイヤブラシで形成した半
導体加速度センサ。
4. A semiconductor acceleration sensor in which a circuit board on which the semiconductor acceleration sensor is mounted is held by a vibration absorbing member having elasticity, and a connection wiring to the circuit board is formed by a multi-wire brush.
【請求項5】半導体加速度センサを実装した回路基板を
ハウジングで囲繞すると共に、ハウジング内壁に保持し
弾性を持った振部材に上記回路基板を保持し、上記ハウ
ジング内にゲル状絶縁物質を充填した半導体加速度セン
サ。
5. A circuit board on which a semiconductor acceleration sensor is mounted is surrounded by a housing, and the circuit board is held by a vibrating member which is held by an inner wall of the housing and has elasticity, and the housing is filled with a gel insulating material. Semiconductor acceleration sensor.
JP3339979A 1991-11-28 1991-11-28 Semiconductor acceleration sensor Pending JPH05149967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3339979A JPH05149967A (en) 1991-11-28 1991-11-28 Semiconductor acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3339979A JPH05149967A (en) 1991-11-28 1991-11-28 Semiconductor acceleration sensor

Publications (1)

Publication Number Publication Date
JPH05149967A true JPH05149967A (en) 1993-06-15

Family

ID=18332583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3339979A Pending JPH05149967A (en) 1991-11-28 1991-11-28 Semiconductor acceleration sensor

Country Status (1)

Country Link
JP (1) JPH05149967A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19745387B4 (en) * 1997-04-15 2005-02-17 Mitsubishi Denki K.K. Semiconductor acceleration detecting device
WO2007105346A1 (en) * 2006-03-14 2007-09-20 Mitsubishi Electric Corporation Acceleration sensor
JP2009156581A (en) * 2007-12-25 2009-07-16 Kitakyushu Foundation For The Advancement Of Industry Science & Technology Tilt detection element
WO2012146547A1 (en) * 2011-04-28 2012-11-01 Robert Bosch Gmbh Printed circuit board arrangement comprising an oscillatory system
JP2013108886A (en) * 2011-11-22 2013-06-06 Seiko Epson Corp Sensor unit and motion measurement system using the same
JP2013253792A (en) * 2012-06-05 2013-12-19 Seiko Epson Corp Sensor unit and motion measurement system using the same
KR101496949B1 (en) * 2013-05-20 2015-03-02 드림스페이스월드주식회사 Inertial sensor having vibration proof function and fabrication method thereof
WO2016088468A1 (en) * 2014-12-05 2016-06-09 ローム株式会社 Acceleration sensor and vibration monitoring system

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19745387B4 (en) * 1997-04-15 2005-02-17 Mitsubishi Denki K.K. Semiconductor acceleration detecting device
WO2007105346A1 (en) * 2006-03-14 2007-09-20 Mitsubishi Electric Corporation Acceleration sensor
JP2009156581A (en) * 2007-12-25 2009-07-16 Kitakyushu Foundation For The Advancement Of Industry Science & Technology Tilt detection element
WO2012146547A1 (en) * 2011-04-28 2012-11-01 Robert Bosch Gmbh Printed circuit board arrangement comprising an oscillatory system
US9363893B2 (en) 2011-04-28 2016-06-07 Robert Bosch Gmbh Printed circuit board arrangement comprising an oscillatory system
JP2013108886A (en) * 2011-11-22 2013-06-06 Seiko Epson Corp Sensor unit and motion measurement system using the same
JP2013253792A (en) * 2012-06-05 2013-12-19 Seiko Epson Corp Sensor unit and motion measurement system using the same
KR101496949B1 (en) * 2013-05-20 2015-03-02 드림스페이스월드주식회사 Inertial sensor having vibration proof function and fabrication method thereof
WO2016088468A1 (en) * 2014-12-05 2016-06-09 ローム株式会社 Acceleration sensor and vibration monitoring system

Similar Documents

Publication Publication Date Title
JP5434017B2 (en) Inertial force sensor
US7939937B2 (en) Chip housing having reduced induced vibration
US5546644A (en) Method of making an acceleration sensor
CN101599467A (en) Equipment for assembling electronic components
JPH05149967A (en) Semiconductor acceleration sensor
EP1847801A2 (en) Angular velocity sensor
KR100198305B1 (en) Vibrating gyroscope
JP2607545B2 (en) Liquid crystal display
JP2015094645A (en) Inertial force sensor device
JP3352856B2 (en) Transducer protection device
US20040066618A1 (en) Shock-resistant enclosure
JP4076988B2 (en) Electronics
US20220099698A1 (en) Inertial measurement unit
JP2004119624A (en) Circuit board
US20070256496A1 (en) Angular velocity sensor
US5895883A (en) Apparatus for dampening movement of passivation material in an electronic module
JPH03174812A (en) Pressure sensing element mounting device
US20250388460A1 (en) Assembly method for inertial sensors in limited space applications
EP1847803A2 (en) Angular velocity sensor
KR100198306B1 (en) Vibrating gyroscope
JP2009133625A (en) Acceleration sensor
JPH07225241A (en) Semiconductor acceleration sensor unit
JP2000292173A (en) Angular speed sensor
JP2520434Y2 (en) Board fixing chip fittings
JPH04178562A (en) Accelerator detecting device