JPH0515005B2 - - Google Patents
Info
- Publication number
- JPH0515005B2 JPH0515005B2 JP63131454A JP13145488A JPH0515005B2 JP H0515005 B2 JPH0515005 B2 JP H0515005B2 JP 63131454 A JP63131454 A JP 63131454A JP 13145488 A JP13145488 A JP 13145488A JP H0515005 B2 JPH0515005 B2 JP H0515005B2
- Authority
- JP
- Japan
- Prior art keywords
- yps
- conductivity
- ysi
- component concentration
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000011734 sodium Substances 0.000 description 32
- 239000013078 crystal Substances 0.000 description 18
- 229910001415 sodium ion Inorganic materials 0.000 description 12
- 230000004913 activation Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 230000005484 gravity Effects 0.000 description 4
- 239000002228 NASICON Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 229910000873 Beta-alumina solid electrolyte Inorganic materials 0.000 description 2
- 229910014103 Na-S Inorganic materials 0.000 description 2
- 229910014147 Na—S Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000004108 freeze drying Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- WYWIFABBXFUGLM-UHFFFAOYSA-N oxymetazoline Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C)=C1CC1=NCCN1 WYWIFABBXFUGLM-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Conductive Materials (AREA)
- Secondary Cells (AREA)
Description
(産業上の利用分野)
本発明はNa−S電池の隔壁をはじめとして各
種の固体電解質として好適に利用し得るアルカリ
イオン伝導性組成物、具体的にはNa+イオン伝導
性Na2O−Y2O3−SiO2−P2O5系組成物に関する。
(従来技術とその問題点)
固定電解質として公知のβ−アルミナはNa+イ
オン伝導性に優れたものであるが、出発原料とし
て焼結性に劣るβ−アルミナに高温での揮発性に
富むナトリウム化合物を組合せ、反応焼結させた
ものであつて、均質かつ緻密な焼結体が得難いこ
と、成型が困難なこと、結晶方向により伝導度に
著しい差があること等に難点を有する。
特公昭56−5687号には化学式Na1+xZr2SixP3-x
O12よりなる焼結体(NASACONと称する)が提
唱されており、良好なNa+イオン伝導度と結晶方
向による伝導度の差異がないこと等の利点を有す
るが、ZiO2分を多量に導入したことにより焼結
温度が高く、かつ緻密な焼結体が得難く、成型性
も不十分であつて実用には供し得ない。
特開昭59−107942号には前記NASICONに替
るNa1+xZr2-x/3SixP3-xO12-2x/3よりなるガラス組
成物が提唱されており、溶融ガラスを種々の形状
に成型できる利点を有するが、1600℃以上の高温
での溶融を必要とし、かつP2O5分の少ない(0
〜6.8mol%)極めて狭い組成領域に特定されそ
の調製が容易でなく、実用に供するには到らな
い。
Physics and chemistry of minerals〔第5巻
第245〜253頁(1980年発行)〕等にはNa+イオ
ン伝導性組成物に関し、Na3YSi3O9、
Na5YSi4O12、およびNa9YSi6O18焼結体が良好な
伝導度を示し、特にNa5YSi4O12は300℃における
Na+イオン伝導度σ300が10-1S.cm-1に達すること
を記載しているが、前記組成物に合致した均質な
組成物を得るためには厳密な原料調整を必要と
し、また緻密な焼結体が得難く脆弱であり、かつ
成型性に難点がある。
すなわち、概して焼結体についてみれば緻密堅
牢性に劣り、成形性も悪く、一方ガラスについて
みれば1600℃以上の高温での溶融を必要とし、か
つその成分領域もきわめて限定される。
本発明はこれら問題点を解消し、低温度で焼成
あるいは溶融でき緻密堅牢な焼結体あるいはガラ
ス体となし得、従つて成型性に優れ、良好なNa+
イオン伝導性を示す組成物を提供することを目的
とする。
(問題点を解決するための手段)
本発明は化学式Na3+3x-yY1-xSi3-yPyO9よりな
り、かつ−0.1≦2x−y≦1、0<y≦0.8の範囲
内にあるイオン伝導性リン珪酸塩組成物を提供す
るものである。
公知のNa3YSi3O9、Na5YSi4O12または
Na9YSi6O18よりなるNa+イオン伝導性組成物は
成分領域が前記夫々の組成を中心として極めて狭
い範囲に限定され、かつ均質性が要求されるため
厳密な原料調製を必要とし、また緻密な焼結体が
得難く堅牢性において劣る。
本発明においては該Na2O−Y2O3−SiO2系に
P2O5を導入し、Na3+3x-yY1-xSi3-yPyO9系〔ただ
しx1、y≦1〕(以下本式をNY1-xPySと略す)
としたことにより各成分間の固溶領域が拡大され
広い範囲でNa+イオン伝導性(以下単に伝導性と
いう)を示し、比較的低温短時間で緻密な焼結体
(真比重に対し95%以上)とすることができ、堅
牢性に優れる。
本成分系においてはNa3YSi3O9と類似タイプ
の斜方晶系の結晶相(以下N3YPSタイプとい
う)、Na5YSi4O12と類似タイプの六方晶系の結晶
相(以下N5YPSタイプという)、Na9YSi6O18と
類似タイプの等軸晶系の結晶相(以下N9YPSタ
イプという)およびこれらの混晶の生成が認めら
れる。
本成分系においてNa−S電池等への実用に供
し得るNa+イオン伝導度〔於300℃〕(以下単に伝
導度という)σ300が10-4S.cm-1を超える範囲は後
述するようにNY1-xPyS式において−0.1≦2x−
y≦1、0≦y≦0.8に集約される。ここでP
〔y〕成分は微量導入しても焼結体が向上し、
1100℃未満で緻密な焼結体となる。ただしy>
0.8であると伝導度において劣化する。同様に2x
−yが前記範囲を外れると伝導度は低下する。
さらに0.2≦2x−y≦1、0<y≦0.65の範囲
とすればσ300>10-3S.cm-1ときわめて良好な伝導
度のものが得られ最大8×10-2S.cm-1にも達す
る。これは公知のβ−Al2O3、NASICONと同等
以上であり、またそれらと異なり緻密堅牢性に富
む。
また前記−0.1≦2x−y≦1、0<y≦0.8の成
分範囲においては1350℃以下で容易に溶融ガラス
化でき、加えてこれを結晶質ガラスとすることも
でき、これらガラス、結晶質ガラスにおいても良
好な伝導度を有する。
以下実施例により本発明を詳述する。
(実施例)
実施例 1
Y(NO3)3・6H2O、(NH4)2HPO4、Na2CO3お
よびNa2O・SiO2を出発原料として式NY1-xPy
(ただし0≦x、y≦1)に則つて混合水溶液を
調製し、次いで噴霧−凍結/凍結−乾燥法により
混合乾燥粉を得、さらに600〜900℃に仮焼して前
駆原料粉を得た。なお前記乾燥法を採用すればミ
クロ的な均質混合物が得られるので好都合であ
る。
これを筒状型枠に充填し900〜1100℃の適宜温
度で約0.5時間焼結し各種組成の試料を作製した。
それらの試料は一部は粉末としてx線粉末回析
法により回析パターンを求め、公知の
Na3YSi3O9、Na5YSi4O12、Na9YSi6O18の解析
データーをもとに特定のミラー指数を選択して格
子定数を計算した。
またロツド状試料について銀ペーストおよび金
スパツター膜を阻止用電極として交流ベクトルイ
ンピーダンスメーターを使用して各特定温度にお
ける電導度を測定した。
さらにアレニウム式σ=A/Texp(−E/
RT)〔ただしσ:伝導度(s/cm)、R;気体定
数(J.K-1.mol-1)A;定数、T;絶対温度(K)、
E;活性化エネルギー(KJ/mol)〕に基づき活
性化エネルギーを算定した。
x線回析によれば本発明の成分系、NY1-xPy
Sの結晶相は公知のNa3YSi3O9斜方晶系)と類
似のN3YPSタイプ、Na5YSi4O12(六方晶系)と
類似のN5YPSタイプ、Na9YSi6O18(等軸晶系)
と類似のN9YPSタイプおよびこれらの混晶より
なる。
うちN3YPsは〔SiO4〕あるいは〔PO4〕四面体
の6員環を骨格とするものであり、N5YPSは
〔SiO4〕あるいは〔PO4〕四面体の12員環を骨格
とするものであり、またN9YPSは前記N3YPSと
類似構造と推定される。
ちなみに第1図はN3YPSにおいて−〔SiO4〕−
…−〔PO4〕−6員環の中央に空孔Vを有し、
(111)方向にNa+イオンの伝導経路を形成したモ
デルを示したものである。
第1表は数種の試料の結晶相、焼結温度、かさ
比重を、また第2表は同様に結晶相、格子定数を
例示した。さらに第3表には主な試料の伝導度を
示した。
本実施例においては噴霧−凍結/凍結−乾燥法
を適用したこと、および本成分系が焼結性に富む
ことにより均質で高いかさ比重の緻密焼結体が得
られそれは真比重の約97%程度にも達するととも
に、伝導性も良好である。なお、第1表比較例に
示した公知のNa3YSi3O9、Na5YSi4O12は本実施
例より100℃以上高い焼結温度を必要とする。
第2図Aは式NY1-xPySにおけるY(1−x)
成分濃度、P(y)成分濃度を変化させた場合の各結
晶相の生成状況を示したY−P成分濃度ダイヤグ
ラムであつて、各結晶タイプは図に付記したとお
りであり、うち(N3+N5)YPSはN3YPSおよ
びN5YPSの混晶を示す。
図中例えばA点(x=0.3、y=0.3;組成は第
4表参照)におけるP(y)成分濃度を0.3に固定し
Y(1−x)成分濃度を漸次減少し、B点(x=
0.35)、C点(x=0.5)、D点(x=0.55)に変化
させることにより結晶相は夫々N3YPSより(N3
+N5)YPS、N5YPS、N9YPSに変化する。
例えばE点(x=0.5、y=0.1;組成は第4表
参照)におけるY(1−x)成分濃度を0.5に固定
しP(y)成分濃度を漸次増加しF点(y=0.25)、
C点(y=0.3)、G点(y=0.35)に変化させる
ことにより結晶相は夫々N9YPSよりN5YPS、
N5YPS、N3YPSに変化する。この領域において
は、N5YPSの結晶相を呈するC、F点において
最良の伝導度(σ300;2〜3×10-2S.cm-1)が得
られる。
図から明らかなようにN9YPSまたはN5YPSが
分布する領域は直線Pすなわち1−P成分濃度=
2×Y成分濃度〔2x−y=1〕、および直線Qす
なわち1.5−P成分濃度=2×Y成分濃度〔2x−
y=0.5〕に囲まれる範囲にある。
直線QよりY成分濃度が多い領域ではN3YPS
が生成する。
第4表は前記A〜Gの試料について300℃にお
ける伝導度と活性化エネルギーを示した。既述し
たようにC、Fにおいては伝導度2〜3×10-2S.
cm-1、活性化エネルギー20KJ/mol程度ときわめ
て良好である。
第2図Bは第2図Aに対応し、P成分濃度−Y
成分濃度を変化させた場合の各相の伝導度(300
℃)を図に付記するようにきわめて高い、高い、
低い区分し分布させたものである。
図から明らかなようにσ300>10-4S.cm-1と高い
ものは直線P〔2x−y=1〕、直線S〔2x−y=−
0.1〕、およびP(y)=0.8に囲まれた範囲、すなわ
ち−0.1≦2x−y≦1、y≦0.8の領域にあり、こ
れを第1図Aと対照させると該領域にはN3YPS、
N5YPS、N9YPS、(N3+N5)YPSの結晶が含ま
れる。
同様にσ300>10-3S.cm-1と極めて高いものは直
線P〔2x−y=1〕、直線R〔2x−y=0.2〕、およ
びP(y)=0.65により囲まれた範囲、すなわち0.2
≦2x−y≦1、y≦0.65の領域に集中し、これを
第1図Aに対照させると該領域にはN5YPS、
N9YPSを主とし一部に(N3+N5)YPS、
N3YPSが含まれる。
第3図は主な試料についての伝導度のアレニウ
スプロツトすなわち1nS.cm-1・K−103/Kの相
関グラフを示したもので本実施例に示したものは
伝導度が公知のNa3YSi3O9より優れ、
Na5YSi4O12に近接するものまで各種のものが得
られ、かつ活性化エネルギーが低く、良好なこと
を示す。
なお、本発明におけるNaに対しLi、K等のア
ルカリ金属を、Yに対しSm、Sc、La、Ho、Pr、
Nd等の希土類を一部置換併存させてもよい。
実施例 2
公知のNASICONおよびNa5YSi4O12の試料を
作製し、本実施例1に示した試料Cと対比して伝
導度測定(於300℃)および硬度試験を実施した。
伝導度試験は実施例1に示した方法と同様に行
ない、硬度試験は互いに一方の試料片のエツジ部
を他の試料片の平坦面に当接加傷して比較対比し
た。
結果は第5表に示すように本実施例のものは伝
導度において比較例2より若干劣るが、低温で緻
密な焼結体となり、また、硬度は最も優れてお
り、堅牢で実用上きわめて有効である。
(Industrial Application Field) The present invention is an alkali ion conductive composition that can be suitably used as various solid electrolytes including partition walls of Na-S batteries, specifically, Na + ion conductive Na 2 O-Y. 2O3 - SiO2 - P2O5 - based composition. (Prior art and its problems) β-alumina, which is known as a fixed electrolyte, has excellent Na + ion conductivity, but β-alumina, which has poor sintering properties, and sodium, which is highly volatile at high temperatures, are used as starting materials. It is made by combining compounds and sintering them by reaction, and has drawbacks such as difficulty in obtaining a homogeneous and dense sintered body, difficulty in molding, and significant differences in conductivity depending on crystal orientation. Special Publication No. 56-5687 has the chemical formula Na 1+x Zr 2 SixP 3-x
A sintered body made of O 12 (referred to as NASACON) has been proposed , and has advantages such as good Na + ion conductivity and no difference in conductivity due to crystal orientation. As a result, the sintering temperature is high, it is difficult to obtain a dense sintered body, and the moldability is insufficient, making it impossible to put it to practical use. JP-A No. 59-107942 proposes a glass composition consisting of Na 1+x Zr 2-x/3 SixP 3-x O 12-2x/3 to replace the NASICON. However, it requires melting at a high temperature of 1600℃ or higher, and requires less than 5 minutes of P 2 O (0
~6.8mol%) It is specified in an extremely narrow compositional range, and its preparation is not easy, so it cannot be put to practical use. Physics and chemistry of minerals [Vol. 5, pp. 245-253 (published in 1980)] etc. describes Na + ion conductive compositions, including Na 3 YSi 3 O 9 ,
Na 5 YSi 4 O 12 and Na 9 YSi 6 O 18 sintered bodies show good conductivity, especially Na 5 YSi 4 O 12 at 300℃.
Although it is stated that the Na + ion conductivity σ 300 reaches 10 -1 S.cm -1 , strict raw material adjustment is required to obtain a homogeneous composition that matches the above composition, and It is difficult to obtain a dense sintered body, it is brittle, and there are difficulties in moldability. That is, sintered bodies generally have poor compactness and solidity and poor formability, while glass requires melting at a high temperature of 1600° C. or higher, and its composition range is extremely limited. The present invention solves these problems and can be fired or melted at low temperatures to form a dense and robust sintered body or glass body, which has excellent moldability and good Na +
An object of the present invention is to provide a composition exhibiting ionic conductivity. (Means for Solving the Problems) The present invention has the chemical formula Na 3+3x-y Y 1-x Si 3-y P y O 9 , and -0.1≦2x-y≦1, 0<y≦0.8 The present invention provides an ionically conductive phosphosilicate composition within the range of Known Na 3 YSi 3 O 9 , Na 5 YSi 4 O 12 or
The Na + ion conductive composition composed of Na 9 YSi 6 O 18 has a component region that is limited to an extremely narrow range centering on each of the above-mentioned compositions, and homogeneity is required, so strict raw material preparation is required. Difficult to obtain a dense sintered body and poor in robustness. In the present invention, the Na 2 O−Y 2 O 3 −SiO 2 system is
P 2 O 5 is introduced , and the Na 3 + 3 )
As a result, the solid solution region between each component is expanded, exhibiting Na + ion conductivity (hereinafter simply referred to as conductivity) over a wide range, and a dense sintered body (95% of true specific gravity above) and has excellent robustness. This component system has an orthorhombic crystal phase similar to Na 3 YSi 3 O 9 (hereinafter referred to as N 3 YPS type), and a hexagonal crystal phase similar to Na 5 YSi 4 O 12 (hereinafter referred to as N 5 YPS type), an equiaxed crystal phase similar to Na 9 YSi 6 O 18 (hereinafter referred to as N 9 YPS type), and mixed crystals of these are observed. The range in which Na + ion conductivity [at 300°C] (hereinafter simply referred to as conductivity) σ 300 exceeds 10 -4 S.cm -1 in this component system, which can be practically used in Na-S batteries, etc., is as described below. NY 1-x P y In S formula −0.1≦2x−
It is summarized as y≦1, 0≦y≦0.8. Here P
Even if the [y] component is introduced in a small amount, the sintered body improves,
It becomes a dense sintered body at temperatures below 1100℃. However, y>
If it is 0.8, the conductivity will deteriorate. Similarly 2x
When -y is out of the above range, the conductivity decreases. Furthermore, if the range is 0.2≦2x−y≦1 and 0<y≦0.65, extremely good conductivity of σ 300 >10 -3 S.cm -1 can be obtained, and the maximum conductivity is 8 × 10 -2 S.cm. It even reaches -1 . This is equivalent to or higher than known β-Al 2 O 3 and NASICON, and unlike them, it is rich in denseness and robustness. In addition, in the component range of -0.1≦2x-y≦1, 0<y≦0.8, it can be easily melted and vitrified at 1350℃ or below, and in addition, it can be made into crystalline glass. It also has good conductivity in glass. The present invention will be explained in detail with reference to Examples below. (Example) Example 1 Formula NY 1 -x P y using Y(NO 3 ) 3・6H 2 O, (NH 4 ) 2 HPO 4 , Na 2 CO 3 and Na 2 O・SiO 2 as starting materials
(However, 0≦x, y≦1) A mixed aqueous solution is prepared, then a mixed dry powder is obtained by spray-freezing/freeze-drying method, and further calcined at 600 to 900°C to obtain a precursor raw material powder. Ta. Note that the drying method described above is advantageous because a microscopic homogeneous mixture can be obtained. This was filled into a cylindrical mold and sintered at an appropriate temperature of 900 to 1100°C for about 0.5 hours to prepare samples of various compositions. Diffraction patterns of some of these samples were determined as powder using X-ray powder diffraction method, and
The lattice constant was calculated by selecting a specific Miller index based on the analytical data of Na 3 YSi 3 O 9 , Na 5 YSi 4 O 12 , and Na 9 YSi 6 O 18 . Furthermore, the electrical conductivity of the rod-shaped sample at each specific temperature was measured using an AC vector impedance meter with silver paste and gold sputtered film as blocking electrodes. Furthermore, the arenium formula σ=A/Texp(-E/
RT) [where σ: conductivity (s/cm), R: gas constant (JK -1 .mol -1 ), A: constant, T: absolute temperature (K),
Activation energy was calculated based on E; activation energy (KJ/mol)]. According to x-ray diffraction, the component system of the present invention, NY 1-x P y
The crystal phase of S is the N 3 YPS type similar to the well-known Na 3 YSi 3 O 9 (orthorhombic system), the N 5 YPS type similar to Na 5 YSi 4 O 12 (hexagonal system), and the Na 9 YSi 6 O 18 (Equiaxed crystal system)
Consists of similar N 9 YPS types and mixed crystals of these. Of these, N 3 YP s has a skeleton of a 6-membered ring of [SiO 4 ] or [PO 4 ] tetrahedron, and N 5 YPS has a skeleton of a 12-membered ring of [SiO 4 ] or [PO 4 ] tetrahedron. It is assumed that N 9 YPS has a similar structure to the above-mentioned N 3 YPS. By the way, Figure 1 shows −[SiO 4 ]− in N 3 YPS.
...-[PO 4 ]-6-membered ring has a hole V in the center,
This shows a model in which the conduction path for Na + ions is formed in the (111) direction. Table 1 lists the crystal phases, sintering temperatures, and bulk specific gravity of several samples, and Table 2 similarly lists the crystal phases and lattice constants. Furthermore, Table 3 shows the conductivity of the main samples. In this example, by applying the spray-freeze/freeze-drying method and by the high sinterability of this component system, a homogeneous and dense sintered body with a high bulk specific gravity was obtained, which was approximately 97% of the true specific gravity. It also has good conductivity. Note that the known Na 3 YSi 3 O 9 and Na 5 YSi 4 O 12 shown in the Comparative Examples in Table 1 require a sintering temperature that is 100° C. or more higher than that of this example. Figure 2 A is Y(1-x) in the formula NY 1-x P y S
This is a Y-P component concentration diagram showing the formation status of each crystal phase when the component concentration and P(y) component concentration are changed. Each crystal type is as appended to the figure, of which (N 3 +N 5 )YPS indicates a mixed crystal of N 3 YPS and N 5 YPS. In the figure, for example, the P(y) component concentration at point A (x = 0.3, y = 0.3; see Table 4 for composition) is fixed at 0.3, the Y(1-x) component concentration is gradually decreased, and the concentration at point B (x =
0.35), C point (x=0.5), and D point (x=0.55), the crystal phase changes from N 3 YPS to (N 3
+N 5 ) YPS, N 5 YPS, N 9 YPS. For example, the Y(1-x) component concentration at point E (x=0.5, y=0.1; see Table 4 for composition) is fixed at 0.5, and the P(y) component concentration is gradually increased to point F (y=0.25). ,
By changing point C (y=0.3) and point G (y=0.35), the crystal phase changes from N 9 YPS to N 5 YPS and N 5 YPS, respectively.
Changes to N 5 YPS, N 3 YPS. In this region, the best conductivity (σ 300 ; 2 to 3×10 −2 S.cm −1 ) is obtained at points C and F, which exhibit a crystalline phase of N 5 YPS. As is clear from the figure, the area where N 9 YPS or N 5 YPS is distributed is a straight line P, that is, 1-P component concentration =
2 x Y component concentration [2x - y = 1], and straight line Q, i.e. 1.5 - P component concentration = 2 x Y component concentration [2x -
y=0.5]. In the region where the Y component concentration is higher than the straight line Q, N 3 YPS
is generated. Table 4 shows the conductivity and activation energy at 300°C for the samples A to G. As mentioned above, the conductivity of C and F is 2 to 3×10 -2 S.
cm -1 and activation energy of about 20 KJ/mol, which is extremely good. Figure 2B corresponds to Figure 2A, P component concentration - Y
Conductivity of each phase (300
℃) is extremely high, high,
This is a low classification and distribution. As is clear from the figure, the high values of σ 300 > 10 -4 S.cm -1 are the straight line P [2x-y=1] and the straight line S [2x-y=-
0.1], and P(y) = 0.8, that is, in the region -0.1≦2x-y≦1, y≦0.8. Comparing this with Figure 1A, there are N 3 YPS,
Contains crystals of N 5 YPS, N 9 YPS, and (N 3 +N 5 )YPS. Similarly, extremely high σ 300 >10 -3 S.cm -1 is the range surrounded by straight line P [2x-y=1], straight line R [2x-y=0.2], and P(y)=0.65. , i.e. 0.2
Concentrating on the region ≦2x-y≦1, y≦0.65, and comparing this with FIG. 1A, there are N 5 YPS,
Mainly N 9 YPS, some (N 3 + N 5 ) YPS,
Contains N 3 YPS. Figure 3 shows the Arrhenius plot of conductivity for the main samples, that is, the correlation graph of 1nS.cm -1 K-10 3 /K. 3 YSi 3 O 9 better,
Various products can be obtained, including those close to Na 5 YSi 4 O 12 , and the activation energy is low, indicating that the product is good. In addition, in the present invention, alkali metals such as Li and K are used for Na, and Sm, Sc, La, Ho, Pr, and Y are used for Y.
A rare earth element such as Nd may also be partially substituted. Example 2 Samples of known NASICON and Na 5 YSi 4 O 12 were prepared, and conductivity measurements (at 300° C.) and hardness tests were conducted in comparison with Sample C shown in Example 1. The conductivity test was carried out in the same manner as in Example 1, and the hardness test was compared by touching and damaging the edge of one sample piece against the flat surface of the other sample piece. The results are shown in Table 5. Although the conductivity of this example is slightly inferior to that of Comparative Example 2, it becomes a dense sintered body at low temperature, and has the best hardness, is robust, and is extremely effective in practical use. It is.
【表】
* 理論値
[Table] * Theoretical value
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】
(発明の効果)
本発明によればNa2O−Y2O3-SiO2系にP2O5を
導入したことにより広い領域でNa+イオン伝導度
の優れた緻密焼結体が得られる。それらは比較的
低温短時間で焼結し、緻密堅牢な焼結体を製造す
ることができる。さらに容易にガラス化、結晶質
ガラス化でき、成形が容易できわめて堅牢なもの
を製造することができるという効果を奏し、産業
利用上きわめて有益である。[Table] (Effects of the invention) According to the present invention, by introducing P 2 O 5 into the Na 2 O−Y 2 O 3- SiO 2 system, a dense sintered body with excellent Na + ion conductivity over a wide area can be created. is obtained. They can be sintered at relatively low temperatures and in a short time to produce dense and robust sintered bodies. Furthermore, it has the effect that it can be easily vitrified and crystalline vitrified, and can be easily molded and manufactured into an extremely robust product, which is extremely useful for industrial use.
第1図は本発明における1例としての部分構造
モデルを示した図、第2図A,BはY(1−x)−
P(y)成分濃度系における夫々結晶相の分布、およ
びNa+イオン伝導度の分布を示したグラフであ
り、第3図はNa+イオン伝導度のアレニウムプロ
ツトを示したグラフである。
FIG. 1 is a diagram showing a partial structure model as an example of the present invention, and FIGS. 2A and B are Y(1-x)-
FIG. 3 is a graph showing the distribution of crystal phases and the distribution of Na + ion conductivity in the P(y) component concentration system, and FIG. 3 is a graph showing an arenium plot of Na + ion conductivity.
Claims (1)
つ−0.1≦2x−y≦1、0<0.8の範囲内にあるこ
とを特徴とするイオン伝導性リン珪酸塩組成物。1. Ion conductive phosphorus having the chemical formula Na 3+3x-y Y 1-x Si 3-y P y O 9 and being within the range of -0.1≦2x-y≦1, 0<0.8 Silicate composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63131454A JPH01302606A (en) | 1988-05-31 | 1988-05-31 | Ion-conducting phosphorus silicate composition material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63131454A JPH01302606A (en) | 1988-05-31 | 1988-05-31 | Ion-conducting phosphorus silicate composition material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01302606A JPH01302606A (en) | 1989-12-06 |
| JPH0515005B2 true JPH0515005B2 (en) | 1993-02-26 |
Family
ID=15058336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63131454A Granted JPH01302606A (en) | 1988-05-31 | 1988-05-31 | Ion-conducting phosphorus silicate composition material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01302606A (en) |
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|---|---|---|---|---|
| JP5049565B2 (en) * | 2006-11-21 | 2012-10-17 | パナソニック株式会社 | All-solid-state electric double layer capacitor |
| JP6460316B2 (en) * | 2013-12-09 | 2019-01-30 | 日本電気硝子株式会社 | Sodium ion battery electrode mixture, method for producing the same, and sodium all-solid battery |
| JP7230772B2 (en) * | 2019-10-18 | 2023-03-01 | トヨタ自動車株式会社 | Method for producing sodium ion conductor |
-
1988
- 1988-05-31 JP JP63131454A patent/JPH01302606A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01302606A (en) | 1989-12-06 |
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