JPH051584B2 - - Google Patents
Info
- Publication number
- JPH051584B2 JPH051584B2 JP61025525A JP2552586A JPH051584B2 JP H051584 B2 JPH051584 B2 JP H051584B2 JP 61025525 A JP61025525 A JP 61025525A JP 2552586 A JP2552586 A JP 2552586A JP H051584 B2 JPH051584 B2 JP H051584B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- charged particle
- microchannel plate
- mcp
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は荷電粒子ビーム測長機に関し、更に詳
述すれば測長機能と立体走査像の観察を可能にし
た装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a charged particle beam length measuring machine, and more specifically to a device capable of having a length measuring function and observation of a three-dimensional scanned image.
[従来技術]
近時、マイクロチヤンネルプレート(以下
MCP)は小型・軽量、高利得、すぐれた時間応
答、磁場の影響をあまり受けない等の特性がある
ため電子ビーム測長機、集束イオンビーム装置等
における荷電粒子検出器として広く使用されてい
る。[Prior art] Recently, microchannel plates (hereinafter referred to as
MCP) is widely used as a charged particle detector in electron beam length measuring machines, focused ion beam devices, etc. due to its characteristics such as small size, light weight, high gain, excellent time response, and little influence by magnetic fields. .
第4図はこのような特性を有するMCPを例え
ば電子ビーム測長機に使用した場合の構成断面
図、第5図はMCP4を平面図を示すもので、図
中1は対物レンズ、2は試料3を走査する電子
線、4はMCPで該MCP4は試料より発生する例
えば2次電子eを入射電子として増倍する細いガ
ラス管束(チヤンネル)4aと、該チヤンネル4a
によつて増倍された出力電子を検出するコレクタ
―4bとにより形成されている。尚、第4図にお
いては、チヤンネル4aの入射端と出射端の間お
よび前記出射端とコレクタ―4bとの間には、
夫々加速電圧が印加されている。 Figure 4 is a cross-sectional view of the configuration when an MCP with such characteristics is used, for example, in an electron beam length measuring machine, and Figure 5 is a plan view of the MCP4, where 1 is the objective lens and 2 is the sample. 3 is a scanning electron beam, 4 is an MCP, and the MCP 4 is a thin glass tube bundle (channel) 4a that multiplies secondary electrons e generated from a sample as incident electrons, and the channel 4a.
A collector 4b detects the output electrons multiplied by the collector 4b. In addition, in FIG. 4, between the input end and the output end of the channel 4a and between the output end and the collector 4b,
An accelerating voltage is applied to each.
このように構成された電子ビーム測長機では、
第5図に示すようにセンタ―ホ―ルタイプの
MCPが使用され、試料3からの例えば2次電子
eは試料3に対向して配置されたMCP4によつ
て検出される。そのため、第6図イに示すような
凹凸のある試料3を電子線1で走査した場合、所
謂エツジ効果により2次電子検出信号は第6図ロ
に示すように対称波形を示すこととなるが、これ
は測長精度を高めるために必要なことである。 In the electron beam length measuring machine configured in this way,
As shown in Figure 5, the center hole type
An MCP is used, and for example, secondary electrons e from the sample 3 are detected by an MCP 4 placed opposite the sample 3. Therefore, when a sample 3 with unevenness as shown in FIG. 6A is scanned with the electron beam 1, the secondary electron detection signal will show a symmetrical waveform as shown in FIG. 6B due to the so-called edge effect. , which is necessary to improve length measurement accuracy.
[発明が解決しようする問題点]
ところで、このように構成された従来の装置で
は、MCP4による2次電子検出が第6図ロに示
すように対称波形であるため、試料上を電子線に
よつて2次元的に走査し、それに伴つてMCP4
から得られた検出信号を図示しない表示装置に供
給して走査像として表示すると、凹凸のある試料
4も立体観のない平面像として表示されることと
なり、試料像観察において不都合を生ずる。[Problems to be solved by the invention] By the way, in the conventional apparatus configured as described above, since the secondary electron detection by MCP4 has a symmetrical waveform as shown in Figure 6 (b), it is difficult to detect the electron beam on the sample. MCP4
If the detection signal obtained from the above is supplied to a display device (not shown) and displayed as a scanned image, the uneven sample 4 will also be displayed as a planar image without a stereoscopic view, which will cause problems in sample image observation.
本発明は以上の点に鑑みなされたもので、試料
に対向して配置された複数のMCPにより試料の
測長と立体走査像をも観察することができる荷電
粒子ビーム測長機を提供することを目的としてい
る。 The present invention has been made in view of the above points, and it is an object of the present invention to provide a charged particle beam length measuring machine capable of measuring the length of a sample and also observing a three-dimensional scanning image using a plurality of MCPs arranged facing the sample. It is an object.
[問題点を解決するための手段]
本目的を達成するための本発明は、荷電粒子線
を試料に照射し該試料より発生する2次荷電粒子
を該試料に対向して配置されゐ該2次荷電粒子を
検出するマイクロチヤンネルプレートにより検出
する装置において、該マイクロチヤンネルプレー
トを少なくとも2つ以上に分割して配置し、測長
時に該夫々のマイクロチヤンネルプレートの2次
荷電粒子入射端を電位を正に切換え、立体走査像
観察時に一方のマイクロチヤンネルプレートの2
次荷電粒子入射端の電位を正に、他方のマイクロ
チヤンネルプレートの2次荷電粒子入射端の電位
を負に切換える手段を設けたことを特徴としてい
る。[Means for Solving the Problems] The present invention for achieving the object is to irradiate a sample with a charged particle beam and to collect secondary charged particles generated from the sample, which are placed opposite to the sample. In a device for detecting secondary charged particles using a microchannel plate, the microchannel plate is divided into at least two parts, and the secondary charged particle incident end of each microchannel plate is placed at a potential during length measurement. 2 of one microchannel plate during stereoscopic scanning image observation.
The present invention is characterized in that means is provided for switching the potential of the secondary charged particle entrance end to positive and the potential of the secondary charged particle entrance end of the other microchannel plate to negative.
[実施例] 以下本発明の実施例を図面に基づき詳述する。[Example] Embodiments of the present invention will be described in detail below based on the drawings.
第1図は本発明の一実施例の構成断面図であ
り、第2図は第1図の実施例装置に使用される
MCPの平面図である。尚、第4図に示す従来装
置と同一構成要素には同一番号を付してその説明
を省略する。第1図及び第2図において、チヤン
ネル10a及びコレクター10bから形成されるMCP
10とチヤンネル11a及びコレクター11bから
形成されるMCP11とが電気的に絶縁されて試
料3に対向して配置されている。12はMCP1
0に正負の電圧(例えば±10V)を切換えて与え
るための電源で、13はMCP11に正負の電圧
(例えば±10V)を切換えて与えるための電源で
ある。14は極性切換え回路であり、該極性切換
え回路14によつてMCP10とMCP11に印加
される電圧の電力の極性が切換えられる。 FIG. 1 is a cross-sectional view of an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the structure of an embodiment of the invention.
FIG. 3 is a plan view of MCP. Components that are the same as those of the conventional device shown in FIG. 4 are given the same numbers and their explanations will be omitted. In FIGS. 1 and 2, an MCP formed from a channel 10a and a collector 10b
10 and an MCP 11 formed from a channel 11a and a collector 11b are arranged facing the sample 3 while being electrically insulated. 12 is MCP1
13 is a power supply for switching and applying a positive and negative voltage (for example, ±10V) to the MCP 11; 14 is a polarity switching circuit, and the polarity of the voltage power applied to the MCP 10 and the MCP 11 is switched by the polarity switching circuit 14.
このように構成された装置では、測長時のよう
に対称波形が必要な場合は極性が切換え回路14
によつてMCP10とMCP11の双方のMCPの
極性を正の電位(例えば十10V)になるように切
り換える。このように、双方のMCPの極性を切
換えするることによつて、MCP10とMCP11
の双方のMCPよつて試料3よりの2次電子eが
検出されるため、この検出信号を加算すれば従来
装置と同様に第6図ロに示すような対称波形を得
ることができ、従つて、測長装置として使用する
ことができる。 In the device configured in this way, when a symmetrical waveform is required such as during length measurement, the polarity is switched by the circuit 14.
The polarity of both MCP10 and MCP11 is switched to a positive potential (for example, 10V). In this way, by switching the polarity of both MCPs, MCP10 and MCP11
Since the secondary electron e from sample 3 is detected by both MCPs of , can be used as a length measuring device.
又、立体走査像を観察したい場合には、極性切
換え回路14によつて例えばMCP10には電源
12より負の電圧(例えば―10V)を、MCP1
1には正の電圧(例えば十10V)を印加するよう
に切り換える。この切換えによつて、試料3を第
3図イのように走査すると、MCP11のみが2
次電子を検出できることになり、その結果、
MCP11に近い試料の突起部3aと、MCP11に
遠い試料の突起部3bから夫々発生する2次電子
の量が同等であつても、MCP11に近い突起部
3aからの2次電子はより多く検出されることに
なり、MCP11の検出信号波形は第3図ロのよ
うになる。従つて、立体走査像を観察することが
できる。 In addition, when it is desired to observe a stereoscopic scanned image, the polarity switching circuit 14 applies a negative voltage (for example, -10V) to the MCP10 from the power supply 12.
1 to apply a positive voltage (for example, 10 V). By this switching, when sample 3 is scanned as shown in Fig. 3A, only MCP11 is
It becomes possible to detect the next electron, and as a result,
Even if the amount of secondary electrons generated from the protrusion 3a of the sample near the MCP 11 and the protrusion 3b of the sample far from the MCP 11 is the same, the protrusion near the MCP 11
More secondary electrons from 3a are detected, and the detection signal waveform of the MCP 11 becomes as shown in FIG. 3B. Therefore, a three-dimensional scanned image can be observed.
上記実施例は例示であり、他の態様で実施する
ことができる。上記実施例ではMCPを2つに分
割したがこれに限定されず複数分割であれば良
い。又、試料にイオンビームを照射して、試料よ
りの2次イオンを検出して2次イオン像を観察す
るようにしても良い。 The above embodiments are illustrative and can be implemented in other ways. Although the MCP is divided into two in the above embodiment, the MCP is not limited to this, and may be divided into multiple parts. Alternatively, the sample may be irradiated with an ion beam, secondary ions from the sample may be detected, and a secondary ion image may be observed.
[発明の効果]
以上詳述したように本発明によれば、試料に対
向して配置されるMCPを分割して配置し、且つ、
測長時に該夫々のマイクロチヤンネルプレートの
2次荷電粒子入射端の電位を正に切換え、立体走
査像観察時に一方のマイクロチヤンネルプレート
の2次荷電粒子入射端の電位を正に、他方のマイ
クロチヤンネルプレートの2次荷電粒子入射端の
電位を負に切換える手段を設けたため試料よりの
2次荷電粒子検出信号波形を対称又は非対称で検
出できるため、測長機能と立体走査像の観察機能
を有する荷電粒子ビーム測長機が提供される。
又、立体走査像を得る場合、一方のマイクロチヤ
ンネルプレートの2次荷電粒子入射端の電位を正
に、他方のマイクロチヤンネルプレートの2次荷
電粒子入射端の電位を負に切換えるだけで良く、
各マイクロチヤンネルプレートからの検出信号の
差を求めるような引算回路が不要となる。その
為、製造コスト的に有利となる。[Effects of the Invention] As detailed above, according to the present invention, the MCP placed facing the sample is divided and placed, and
During length measurement, the potential at the secondary charged particle entrance end of each microchannel plate is switched to positive, and during stereoscopic scanning image observation, the potential at the secondary charged particle entrance end of one microchannel plate is switched to positive, and the potential at the secondary charged particle entrance end of one microchannel plate is switched to positive. Since a means is provided to switch the potential of the secondary charged particle incident end of the plate to negative, the secondary charged particle detection signal waveform from the sample can be detected symmetrically or asymmetrically. A particle beam length measuring machine is provided.
Furthermore, when obtaining a three-dimensional scanning image, it is sufficient to simply switch the potential of the secondary charged particle entrance end of one microchannel plate to positive, and the potential of the secondary charged particle entrance end of the other microchannel plate to negative.
There is no need for a subtraction circuit that calculates the difference between detection signals from each microchannel plate. Therefore, it is advantageous in terms of manufacturing cost.
第1図は本発明の概略構成図、第2図は第1図
で使用されるMCPの平面図、第3図イ,ロは本
発明を説明するための図、第4図は従来装置の概
略構成図、第5図は従来のMCPの平面図、第6
図イ,ロは従来装置を説明するための図である。
1:対物レンズ、2:電子線、3:試料、1
0,11:MCP、12,13:電源、14:極
性切り換え回路。
Fig. 1 is a schematic configuration diagram of the present invention, Fig. 2 is a plan view of the MCP used in Fig. 1, Fig. 3 A and B are diagrams for explaining the present invention, and Fig. 4 is a diagram of the conventional device. Schematic configuration diagram, Figure 5 is a plan view of the conventional MCP, Figure 6 is a diagram of the conventional MCP.
Figures A and B are diagrams for explaining a conventional device. 1: Objective lens, 2: Electron beam, 3: Sample, 1
0, 11: MCP, 12, 13: Power supply, 14: Polarity switching circuit.
Claims (1)
生する2次荷電粒子を、該試料に対向して配置さ
れるマイクロチヤンネルプレートにより検出する
荷電粒子ビーム測長機において、前記マイクロチ
ヤンネルプレートを少なくとも2つ以上に分割し
て配置し、測長時に該夫々のマイクロチヤンネル
プレートの2次荷電粒子入射端の電位を正に切換
え、立体走査像観察時に一方のマイクロチヤンネ
ルプレートの2次荷電粒子入射端の電位を正に、
他方のマイクロチヤンネルプレートの2次荷電粒
子入射端の電位を負に切換える手段を設けた荷電
粒子ビーム測長機。1. In a charged particle beam length measuring machine that irradiates a sample with a charged particle beam and detects secondary charged particles generated from the sample using a microchannel plate arranged opposite to the sample, the microchannel plate is connected to at least two When measuring the length, the potential of the secondary charged particle entrance end of each microchannel plate is switched to positive, and when observing a three-dimensional scanning image, the potential of the secondary charged particle entrance end of one microchannel plate is changed to positive. Make the potential positive,
A charged particle beam length measuring device provided with means for switching the potential of the secondary charged particle incident end of the other microchannel plate to negative.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61025525A JPS62184752A (en) | 1986-02-07 | 1986-02-07 | Charged particle beam length meter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61025525A JPS62184752A (en) | 1986-02-07 | 1986-02-07 | Charged particle beam length meter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62184752A JPS62184752A (en) | 1987-08-13 |
| JPH051584B2 true JPH051584B2 (en) | 1993-01-08 |
Family
ID=12168464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61025525A Granted JPS62184752A (en) | 1986-02-07 | 1986-02-07 | Charged particle beam length meter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62184752A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5202348A (en) * | 1989-12-07 | 1993-04-13 | The University Of British Columbia | Thiarubrine antifungal agents |
| PL207199B1 (en) * | 2003-04-17 | 2010-11-30 | Politechnika Wroclawska | Secondary electron detection system for scanning electron microscope |
| US7531812B2 (en) | 2003-10-27 | 2009-05-12 | Politechnika Wroclawska | Method and system for the directional detection of electrons in a scanning electron microscope |
| PL210038B1 (en) * | 2004-01-21 | 2011-11-30 | Politechnika Wroclawska | The method and the system designed for directional detection of electrons in the scanning electron microscope |
| EP3203494B1 (en) * | 2014-09-24 | 2019-12-18 | National Institute for Materials Science | Energy-discrimination electron detector and scanning electron microscope in which same is used |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124852U (en) * | 1984-02-01 | 1985-08-22 | 日本電子株式会社 | electron beam equipment |
-
1986
- 1986-02-07 JP JP61025525A patent/JPS62184752A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62184752A (en) | 1987-08-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |