JPH0517856A - Method for reducing impurity in pure al sheet - Google Patents
Method for reducing impurity in pure al sheetInfo
- Publication number
- JPH0517856A JPH0517856A JP32254891A JP32254891A JPH0517856A JP H0517856 A JPH0517856 A JP H0517856A JP 32254891 A JP32254891 A JP 32254891A JP 32254891 A JP32254891 A JP 32254891A JP H0517856 A JPH0517856 A JP H0517856A
- Authority
- JP
- Japan
- Prior art keywords
- pure
- impurities
- sheet
- plate material
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 15
- 229910052718 tin Inorganic materials 0.000 claims abstract description 14
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- 229910052745 lead Inorganic materials 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000012298 atmosphere Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 36
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 239000010406 cathode material Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- -1 that is Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、通常の純Al板材中
に不純物として含有するSn,Pb,In,およびGa
を低減する方法に関するものである。BACKGROUND OF THE INVENTION The present invention relates to Sn, Pb, In, and Ga contained as impurities in a normal pure Al plate material.
It is related to the method of reducing.
【0002】[0002]
【従来の技術】従来、一般に、純度:99.8%以上の
純Al板材が、電解コンデンサーの陰極材やAl熱交換
器のフィン材などの製造に用いられていることは良く知
られている。また、上記従来純Al板材が、不純物とし
て一般にSiやFe,Cu,さらにGa,Sn,Pb,
およびInなどを含有することも知られている。2. Description of the Related Art Conventionally, it is well known that a pure Al plate material having a purity of 99.8% or more is generally used for manufacturing a cathode material of an electrolytic capacitor or a fin material of an Al heat exchanger. .. In addition, the conventional pure Al plate material generally contains Si, Fe, Cu, Ga, Sn, Pb,
It is also known to contain In and In.
【0003】[0003]
【発明が解決しようとする課題】一方、近年、上記の電
解コンデンサーやAl熱交換器などの小形化および軽量
化に対する要求は厳しく、これに伴ない、これらの構造
部材である陰極材やフィン材などにもより一層の薄肉化
が要求されているが、これを構成する上記の従来純Al
板材においては、特に不純物として合計量で20ppm 以
上含有するGa,Sn,Pb,およびInが耐食性に悪
影響を及ぼすために、これを薄肉化すると貫通孔が形成
され易くなり、これが原因で特性低下をきたすようにな
ることから、満足な薄肉化は期待できず、したがって上
記従来純Al板材に、合金成分として耐食性向上成分を
含有させて、薄肉化をはかる試みがなされているのが現
状である。なお、上記従来純Al板材に不純物として含
有するGa,Sn,Pb,およびInは、Al純度に関
係なく、いいかえれば、例えば純度:99.85%のも
のでも、純度:99.99%のものでも合計量で20pp
m 以上含有するものである。On the other hand, in recent years, there are severe demands for downsizing and weight reduction of the above-mentioned electrolytic capacitors and Al heat exchangers, and accordingly, the cathode materials and fin materials which are these structural members are demanded. Further thinning is also required for the above, but the conventional pure Al that composes this is required.
In the plate material, in particular, Ga, Sn, Pb, and In, which are contained in a total amount of 20 ppm or more as impurities, adversely affect the corrosion resistance. Therefore, when the thickness of the plate material is reduced, through holes are likely to be formed, which causes deterioration of characteristics. Therefore, satisfactory thinning cannot be expected. Therefore, it is the current situation that attempts have been made to reduce the thickness by adding a corrosion resistance improving component as an alloy component to the conventional pure Al plate material. Ga, Sn, Pb, and In contained as impurities in the above-mentioned conventional pure Al plate material are irrespective of Al purity, in other words, for example, even if the purity is 99.85%, the purity is 99.99%. But the total amount is 20pp
It contains more than m.
【0004】[0004]
【課題を解決するための手段】そこで、本発明者は、上
述のような観点から、上記の99.8%以上の純度を有
する従来純Al板材に着目し、特にこれの耐食性低下の
原因となっている不純物、すなわち上記従来純Al板材
に不純物として合計量で20ppm 以上含有するSn,P
b,In,およびGaを低減して、耐食性向上をはかる
べく研究を行なった結果、上記従来純Al板材に、真空
雰囲気や、ArまたはN2 雰囲気などの非酸化性雰囲気
中、300〜580℃の範囲内の所定温度に所定時間保
持の条件で加熱処理を施すと、不純物のうちの特にS
n,Pb,In,およびGaが積極的に板材表面部に拡
散移動して凝集するようになり、したがってこの不純物
凝集表面部をエッチング手段などにより除去すれば、純
Al板材の上記不純物の含有量が低減することになり、
しかも不純物としてのSn,Pb,In,およびGaを
合計量で5ppm 以下に低減すると、純Al板材の耐食性
が著しく向上するようになり、薄肉化しても貫通孔の発
生が阻止されるようになるという研究結果を得たのであ
る。Therefore, the present inventor, from the above-mentioned viewpoint, pays attention to the conventional pure Al plate material having a purity of 99.8% or more, and as a cause of deterioration of corrosion resistance. Impurities, that is, Sn, P that is contained in the above-mentioned conventional pure Al plate material as impurities in a total amount of 20 ppm or more
As a result of reducing b, In, and Ga, and conducting research to improve corrosion resistance, the above-mentioned conventional pure Al plate material was subjected to a vacuum atmosphere or a non-oxidizing atmosphere such as Ar or N 2 atmosphere at 300 to 580 ° C. When the heat treatment is performed at a predetermined temperature within the range for a predetermined time, the S
n, Pb, In, and Ga are positively diffused and moved to the surface of the plate material to be aggregated. Therefore, if the impurity aggregated surface portion is removed by an etching means or the like, the content of the above impurities in the pure Al plate material is increased. Will be reduced,
Moreover, if the total amount of Sn, Pb, In, and Ga as impurities is reduced to 5 ppm or less, the corrosion resistance of the pure Al plate material will be remarkably improved, and the formation of through holes will be prevented even if the thickness is reduced. That is the result of the research.
【0005】この発明は、上記の研究結果にもとづいて
なされたものであって、不純物としてSn,Pb,I
n,およびGaのうちの1種以上を合計量で20ppm 以
上含有し、かつ300μm以下の板厚を有する純度:9
9.8%以上の純Al板材に、非酸化性雰囲気中、30
0〜580℃の範囲内の所定温度に所定時間保持の条件
で加熱処理を施して、上記不純物を表面部に拡散移動さ
せ、ついで、上記加熱処理後の純Al板材における不純
物凝集表面部を除去して、純Al板材における上記不純
物の合計含有量を5ppm 以下に低減することからなる純
Al板材の不純物低減方法に特徴を有するものである。The present invention has been made based on the above-mentioned research results, and Sn, Pb, and I are used as impurities.
Purity containing one or more of n and Ga in a total amount of 20 ppm or more and having a plate thickness of 300 μm or less: 9
9.8% or more of pure Al plate material, in a non-oxidizing atmosphere, 30
A heat treatment is performed at a predetermined temperature within a range of 0 to 580 ° C. for a predetermined period of time to diffuse and move the impurities to the surface portion, and then the impurity aggregation surface portion of the pure Al plate material after the heat treatment is removed. Then, the method is characterized by a method of reducing impurities in a pure Al plate material, which comprises reducing the total content of the above impurities in the pure Al plate material to 5 ppm or less.
【0006】なお、この発明の方法において、不純物低
減処理の対象となる純Al板材は、上記の通り陰極材や
フィン材などとして実用に供されているものであり、こ
の場合純度が99.8%未満になると、上記のSn,P
b,In,およびGaのほかに、不純物として含有する
SiやFe,Znなどの含有量が多くなって特性劣化の
原因となることから、99.8%以上の純度のものが用
いられるものであり、かつ99.8%以上の純度では、
純度に関係なく、いずれもSn,Pb,In,およびG
aを合計量で20ppm 以上含有するものである。In the method of the present invention, the pure Al plate material subjected to the impurity reduction treatment is practically used as the cathode material, the fin material, etc. as described above, and in this case, the purity is 99.8. If less than%, the above Sn, P
In addition to b, In, and Ga, the contents of Si, Fe, Zn, etc., which are contained as impurities, increase and cause deterioration of characteristics. Therefore, those having a purity of 99.8% or more are used. Yes, and with a purity of 99.8% or higher,
Regardless of purity, Sn, Pb, In, and G are all used.
The total amount of a is 20 ppm or more.
【0007】また、この発明の方法において、純Al板
材の板厚を300μm以下としたのは、板厚が300μ
mを越えると不純物の板材表面部への拡散移動に長時間
を要するようになり、生産性の低下をまねくようになる
という理由によるものであり、さらに、加熱処理温度を
300〜580℃と限定したのは、その温度が300℃
未満では不純物の板材表面部への拡散移動がきわめて遅
く、生産工程上望ましくなく、一方その温度が580℃
を越えると、板材に部分溶融が生じるようになるという
理由にもとづくものである。In the method of the present invention, the plate thickness of the pure Al plate material is set to 300 μm or less because the plate thickness is 300 μm.
This is because if m is exceeded, it takes a long time for the impurities to diffuse and move to the surface of the plate material, leading to a decrease in productivity. Further, the heat treatment temperature is limited to 300 to 580 ° C. The temperature was 300 ℃
If the temperature is less than, diffusion and movement of impurities to the surface of the plate are extremely slow, which is not desirable in the production process.
This is based on the reason that when the temperature exceeds the range, the plate material partially melts.
【0008】さらに、上記の通り純Al板材の耐食性
は、これに不純物として含有するSn,Pb,In,お
よびGaによって影響され、これら不純物の合計含有量
を5ppm 以下にすると、すぐれた耐食性をもつようにな
ることから、不純物低減処理後の純Al板材における上
記不純物の合計含有量を5ppm以下に定めたのである。Further, as described above, the corrosion resistance of the pure Al plate material is affected by Sn, Pb, In, and Ga contained as impurities therein, and if the total content of these impurities is 5 ppm or less, excellent corrosion resistance is obtained. Therefore, the total content of the above impurities in the pure Al plate material after the impurity reduction treatment is set to 5 ppm or less.
【0009】[0009]
【実施例】つぎに、この発明の方法を実施例により具体
的に説明する。それぞれ表1に示される不純物含有量お
よび板厚の6種の純Al板材(以下従来純Al板材a〜
fという)を用意し、これら従来純Al板材a〜fのそ
れぞれに表1に示される条件で加熱処理を施した後、通
常のエッチング液を用いて同じく表1に示される厚さに
亘って表面部を除去することにより本発明法1〜6を実
施し、表2に示される不純物含有量の本発明純Al板材
A〜Fを製造した。EXAMPLES Next, the method of the present invention will be specifically described by way of Examples. Six types of pure Al plate materials (hereinafter referred to as conventional pure Al plate materials a to
(hereinafter referred to as “f”), and each of these conventional pure Al plate materials a to f is subjected to a heat treatment under the conditions shown in Table 1, and then the same thickness is also shown in Table 1 using an ordinary etching solution. The present invention methods 1 to 6 were carried out by removing the surface portion, and the present invention pure Al plate materials A to F having the impurity contents shown in Table 2 were manufactured.
【0010】[0010]
【表1】 [Table 1]
【0011】ついで、この結果得られた各種の純Al板
材について、168時間の塩水噴霧試験を行ない、単位
面積当りの孔食発生数と最大孔食深さをそれぞれ測定し
た。この測定結果を表2に示した。Next, various pure Al plate materials obtained as a result were subjected to a salt spray test for 168 hours, and the number of pitting corrosion per unit area and the maximum pitting depth were measured. The measurement results are shown in Table 2.
【0012】[0012]
【表2】 [Table 2]
【0013】[0013]
【発明の効果】表1および表2に示される結果から、本
発明法1〜6は、いずれも不純物として含有するSiや
Fe,およびCuの低減は僅かであるが、同Sn,P
b,In,およびGaを著しく低減させ、これら4成分
の合計含有量で20ppm 以上であったものを10ppm 以
下に低減することができ、この結果の純Al板材はすぐ
れた耐孔食性をもつようになることが明らかである。上
述のように、この発明の方法によれば、純Al板材中に
不純物として含有する特にSn,Pb,In,およびG
aを合計含有量で5ppm 以下に低減することができ、こ
れによって純Al板材の耐孔食性が著しく向上するよう
になるので、より一層の薄肉化が可能になるなど工業上
有用な効果がもたらされるのである。From the results shown in Tables 1 and 2, the reduction of Si, Fe, and Cu contained as impurities in the present invention methods 1 to 6 is slight, but Sn and P are the same.
b, In, and Ga can be significantly reduced, and the total content of these four components can be reduced from 20 ppm or more to 10 ppm or less. As a result, the pure Al plate material has excellent pitting corrosion resistance. It is clear that As described above, according to the method of the present invention, in particular, Sn, Pb, In, and G contained as impurities in the pure Al plate material are contained.
It is possible to reduce the total content of a to 5 ppm or less, which significantly improves the pitting corrosion resistance of the pure Al plate material, which leads to industrially useful effects such as further thinning. Is done.
Claims (1)
Gaのうちの1種以上を合計量で20ppm 以上含有し、
かつ300μm以下の板厚を有する純度:99.8%以
上の純Al板材に、 非酸化性雰囲気中、300〜580℃の範囲内の所定温
度に所定時間保持の条件で加熱処理を施して、上記不純
物を表面部に拡散移動させ、 ついで、上記加熱処理後の純Al板材における不純物凝
集表面部を除去して、純Al板材における上記不純物の
合計含有量を5ppm 以下に低減することを特徴とする純
Al板材の不純物低減方法。Claim: What is claimed is: 1. A total amount of one or more of Sn, Pb, In, and Ga of 20 ppm or more is contained as an impurity.
And a pure Al plate material having a plate thickness of 300 μm or less and a purity of 99.8% or more is subjected to a heat treatment in a non-oxidizing atmosphere at a predetermined temperature in the range of 300 to 580 ° C. for a predetermined time, The impurities are diffused and moved to the surface, and then the aggregated surface of impurities in the pure Al plate after the heat treatment is removed to reduce the total content of the impurities in the pure Al plate to 5 ppm or less. Method for reducing impurities in pure Al plate material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30787890 | 1990-11-14 | ||
| JP2-307878 | 1990-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0517856A true JPH0517856A (en) | 1993-01-26 |
Family
ID=17974255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32254891A Pending JPH0517856A (en) | 1990-11-14 | 1991-11-11 | Method for reducing impurity in pure al sheet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0517856A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015185707A (en) * | 2014-03-25 | 2015-10-22 | 三菱マテリアル株式会社 | Manufacturing method of power module substrate with heat sink |
-
1991
- 1991-11-11 JP JP32254891A patent/JPH0517856A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015185707A (en) * | 2014-03-25 | 2015-10-22 | 三菱マテリアル株式会社 | Manufacturing method of power module substrate with heat sink |
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