JPH0517871A - Formation of compound thin film - Google Patents
Formation of compound thin filmInfo
- Publication number
- JPH0517871A JPH0517871A JP19843691A JP19843691A JPH0517871A JP H0517871 A JPH0517871 A JP H0517871A JP 19843691 A JP19843691 A JP 19843691A JP 19843691 A JP19843691 A JP 19843691A JP H0517871 A JPH0517871 A JP H0517871A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- target
- sputtering
- reactive
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 150000001875 compounds Chemical class 0.000 title claims description 13
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 238000005546 reactive sputtering Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 abstract description 22
- 238000004544 sputter deposition Methods 0.000 abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 13
- 239000010408 film Substances 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 150000004767 nitrides Chemical class 0.000 abstract description 5
- 239000010936 titanium Substances 0.000 abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、反応性スパッタ法によ
り、酸化物などの化合物薄膜を形成する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a compound thin film such as an oxide by a reactive sputtering method.
【０００２】[0002]
【従来の技術】酸化物、窒化物、炭化物等の化合物薄膜
をスパッタにより形成する方法としては、薄膜と同じ組
成の化合物からなるターゲットを用いる通常のスパッタ
法と、反応性スパッタ法がある。反応性スパッタ法は、
Ｓｉ，Ａｌ，Ｔｉ等の金属ターゲットを用い、酸素等の
反応性ガスを導入しながらスパッタするものであり、例
えばＳｉの場合であれば、Ｓｉがスパッタされるととも
に酸素と反応し、ＳｉＯ2 薄膜が基板上に形成される。
反応性スパッタ法によれば、ターゲットの調製、再生が
極めて容易であり、また、ＤＣスパッタ法を採用するこ
とができる。2. Description of the Related Art As a method for forming a compound thin film of oxide, nitride, carbide or the like by sputtering, there are an ordinary sputtering method using a target made of a compound having the same composition as the thin film and a reactive sputtering method. The reactive sputtering method is
The sputtering is performed by using a metal target such as Si, Al, or Ti while introducing a reactive gas such as oxygen. In the case of Si, for example, Si is sputtered and reacts with oxygen, and a SiO 2 thin film Are formed on the substrate.
According to the reactive sputtering method, target preparation and regeneration are extremely easy, and the DC sputtering method can be adopted.
【０００３】反応を完結し、特性の優れた化合物薄膜を
安定して得るためには、アルゴンガスともに真空槽に導
入する酸素等の反応性ガス量を増加させることが好まし
い。しかし反応性ガスの導入比を増加させると、膜の付
着速度が大きく低下するという問題があった。In order to complete the reaction and stably obtain a compound thin film having excellent characteristics, it is preferable to increase the amount of reactive gas such as oxygen introduced into the vacuum chamber together with the argon gas. However, when the reactive gas introduction ratio is increased, there is a problem that the deposition rate of the film is significantly reduced.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、薄膜形成速
度の低下を防止して、反応性スパッタ法により化合物薄
膜を形成することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to form a compound thin film by the reactive sputtering method while preventing the thin film formation rate from decreasing.
【０００５】[0005]
【課題を解決するための手段】本発明の化合物薄膜の形
成方法は、反応性スパッタにより化合物薄膜を形成する
に際し、ターゲットに直流電力と高周波電力とを重畳せ
しめて供給し、ターゲットをスパッタすることを特徴と
する。According to the method of forming a compound thin film of the present invention, when a compound thin film is formed by reactive sputtering, direct current power and high frequency power are superposed and supplied to a target to sputter the target. Is characterized by.
【０００６】[0006]
【実施例】図１は本発明の実施例を示す説明図であり、
図２は本実施例におけるターゲット２９と磁石装置３１
との関係を示す説明斜視図である。FIG. 1 is an explanatory view showing an embodiment of the present invention,
FIG. 2 shows a target 29 and a magnet device 31 in this embodiment.
It is an explanatory perspective view showing the relationship with.
【０００７】真空槽１１には、絶縁体２３を介してスパ
ッタ電極２１（陰極）が取り付けられており、この上に
ターゲット２９が載置されている。また、ターゲット２
９と対向して、基板ホルダ２５に成膜される基板２７が
取り付けられている。一方、ターゲット２９の裏面に
は、ターゲット２９の面積よりも小さな磁石装置３１が
設けられている。A sputter electrode 21 (cathode) is attached to the vacuum chamber 11 via an insulator 23, and a target 29 is placed thereon. Also, target 2
A substrate 27 on which a film is to be formed is attached to the substrate holder 25 so as to face the substrate 9. On the other hand, on the back surface of the target 29, a magnet device 31 smaller than the area of the target 29 is provided.
【０００８】磁石装置３１は、Ｓ極をターゲット２９に
向けるＳ磁石３５と、Ｎ極をターゲット２９に向けＳ磁
石３５を離間して囲繞するＮ磁石３３と、ヨーク３７と
から構成されている。Ｎ極からの磁力線３９は、ターゲ
ット２９面を通過したのち再びターゲット２９面を経て
Ｓ極に入り、磁力線３９とターゲット２９とにより閉ル
ープが形成されている。磁石装置３１は、図示していな
い駆動部材により矢印Ｔ方向に移動させることができ
る。The magnet device 31 is composed of an S magnet 35 for directing the S pole toward the target 29, an N magnet 33 for surrounding the S magnet 35 with the N pole facing the target 29, and a yoke 37. The magnetic force line 39 from the N pole passes through the surface of the target 29 and then passes through the surface of the target 29 again to enter the S pole, and the magnetic force line 39 and the target 29 form a closed loop. The magnet device 31 can be moved in the arrow T direction by a driving member (not shown).
【０００９】スパッタ電極２１には、ＲＦ対策を施した
直流電源４１と、マッチングボックス４５を介して高周
波電源４３が接続されている。A DC power source 41 provided with an RF measure and a high frequency power source 43 via a matching box 45 are connected to the sputter electrode 21.
【００１０】スパッタに際しては、真空槽１１内を真空
ポンプ１３により高真空に排気したのち、ガスボンベ１
５からアルゴンガスをバリアブルバルブ１７を介して真
空槽１１内に導入し、また同時に、ガスボンベ１５′か
らバリアブルバルブ１７′を介して酸素（反応性ガス）
を導入し、圧力を調整してスパッタ雰囲気を設定する。
さらに、必要に応じて基板２７をヒータ（図示せず）等
により加熱する。At the time of sputtering, the inside of the vacuum chamber 11 is evacuated to a high vacuum by the vacuum pump 13, and then the gas cylinder 1
Argon gas from 5 is introduced into the vacuum chamber 11 through the variable valve 17, and at the same time, oxygen (reactive gas) is introduced from the gas cylinder 15 ′ through the variable valve 17 ′.
Is introduced and the pressure is adjusted to set the sputtering atmosphere.
Further, the substrate 27 is heated by a heater (not shown) or the like as needed.
【００１１】スパッタ雰囲気を設定したのち、直流電源
４１により直流電力を供給するとともに、マッチングボ
ックス４５により整合をとりながら、高周波電源４３に
より高周波電力を供給する。高周波電源４３としては、
１０〜１００ＭＨｚ程度の周波数のものを用いることが
できる。高周波電力の重畳の程度は、直流電力に対して
１／１０〜３／２倍の高周波電力を供給することが好適
であり、好ましくは１／６〜６／５倍である。放電が開
始されると、マグネトロン型放電により、電子が前述の
閉ループ内に閉じ込められて運動し、金属からなるター
ゲット２９を叩いてスパッタし、同時に金属が酸素ガス
により酸化されて、基板２７上に酸化物薄膜が形成され
る。このとき、磁石装置３１による磁場と電場が直交す
る部分が集中的にスパッタされ、その部分のターゲット
２９が選択的に浸食される（エロージョン現象）。この
実施例では、ターゲット２９の裏面の磁石装置３１を矢
印Ｔ方向に移動させながらスパッタすることにより、磁
場と電場とが直交するターゲット２９上の部位が刻々と
変化し、上記のエロージョン現象を防止するとともに、
形成される化合物薄膜の特性を改善することができる。After setting the sputtering atmosphere, the DC power supply 41 supplies the DC power, and the matching box 45 performs matching to supply the high frequency power from the high frequency power supply 43. As the high frequency power source 43,
A frequency band of about 10 to 100 MHz can be used. The degree of superposition of the high frequency power is preferably 1/10 to 3/2 times the high frequency power with respect to the DC power, and preferably 1/6 to 6/5 times. When the discharge is started, electrons are confined in the closed loop and move by the magnetron type discharge, hitting the target 29 made of a metal to sputter, and at the same time, the metal is oxidized by the oxygen gas to be deposited on the substrate 27. An oxide thin film is formed. At this time, a portion where the magnetic field and the electric field of the magnet device 31 are orthogonal to each other is intensively sputtered, and the target 29 in that portion is selectively eroded (erosion phenomenon). In this embodiment, the magnet device 31 on the back surface of the target 29 is sputtered while moving in the direction of the arrow T, so that the portion on the target 29 where the magnetic field and the electric field are orthogonal to each other changes every moment, and the above erosion phenomenon is prevented. Along with
The characteristics of the compound thin film formed can be improved.
【００１２】ターゲット２９としては、主として金属が
用いられ、例えば、アルミニウム、シリコン、チタン、
タンタル、クロム、インジウム、インジウム−スズ合
金、チタン−アルミニウム合金などが用いられ、反応性
スパッタにより、これらの酸化物、窒化物、炭化物など
が得られる。なお、シリコンなどは不純物をドープする
ことにより導電性を高めることもできる。反応性ガスと
しては、酸素、窒素、アセチレン、メタンなどが用いら
れる。As the target 29, a metal is mainly used. For example, aluminum, silicon, titanium,
Tantalum, chromium, indium, indium-tin alloy, titanium-aluminum alloy and the like are used, and oxides, nitrides and carbides of these are obtained by reactive sputtering. The conductivity of silicon or the like can be increased by doping impurities. As the reactive gas, oxygen, nitrogen, acetylene, methane or the like is used.
【００１３】[0013]
【発明の効果】本発明によれば、酸化物、窒化物等の化
合物薄膜を、反応性スパッタにより製造するに際して、
スパッタ電極に直流電力と高周波電力とを重畳して供給
してスパッタすることにより、反応性ガスによるスパッ
タ速度の低下を防止して、目的とする反応が完結し、優
れた特性を有する化合物薄膜を得ることができる。According to the present invention, when a compound thin film such as an oxide or a nitride is produced by reactive sputtering,
By superimposing DC power and high-frequency power on the sputtering electrode and performing sputtering, a decrease in sputtering speed due to a reactive gas is prevented, the desired reaction is completed, and a compound thin film with excellent characteristics is obtained. Obtainable.
【００１４】実験例１ 図１に示した装置を用い、ターゲット２９として金属チ
タンを、また、基板２７としてガラス板をセットした。Experimental Example 1 Using the apparatus shown in FIG. 1, metallic titanium was set as the target 29 and a glass plate was set as the substrate 27.
【００１５】ついで、真空槽１１内を真空ポンプ１３に
より７×１０-6Ｔｏｒｒまで排気した後、ガスボンベ１
５からバリアブルバルブ１７を介してアルゴンガスを、
また、ガスボンベ１５′からバリアブルバルブ１７′を
介して酸素ガスを真空槽１１内に導入してスパッタ圧力
３〜４×１０-3Ｔｏｒｒとし、室温で反応性スパッタ
し、基板２７上に酸化チタン薄膜を形成した。Then, the inside of the vacuum chamber 11 is evacuated to 7 × 10 -6 Torr by the vacuum pump 13, and then the gas cylinder 1
Argon gas from 5 through the variable valve 17,
Further, oxygen gas is introduced from the gas cylinder 15 'through the variable valve 17' into the vacuum chamber 11 to a sputtering pressure of 3-4 x 10-3 Torr, and reactive sputtering is performed at room temperature to form a titanium oxide thin film on the substrate 27. Formed.
【００１６】このとき、磁石装置３１を矢印Ｔ方向に連
続して往復移動させた。また、直流電源４１により２．
５ＫＷのＤＣ電力を、高周波電源４３（１３．５６ＭＨ
ｚ）により６００Ｗの高周波電力を印加した。At this time, the magnet device 31 was continuously reciprocated in the direction of arrow T. In addition, the DC power supply 41 causes 2.
DC power of 5 kW, high frequency power source 43 (13.56MH
In step z), a high frequency power of 600 W was applied.
【００１７】酸素ガスとアルゴンガスの導入量比を変化
させて反応性スパッタを繰り返し、酸化チタン膜の吸収
の有無および付着速度を測定した。Reactive sputtering was repeated by changing the introduction ratio of oxygen gas and argon gas, and the presence or absence of absorption of the titanium oxide film and the deposition rate were measured.
【００１８】また、高周波電力を重畳させることなく、
ＤＣ電力のみで行なう通常のＤＣスパッタ法（従来法）
によっても、同様の反応性スパッタを行なった。Further, without superposing high frequency power,
Ordinary DC sputtering method that uses only DC power (conventional method)
The same reactive sputtering was also performed by.
【００１９】この結果、従来法では酸素ガス量を２５％
（容量／容量）以上にしないと、吸収がない酸化チタン
薄膜（３５３０〜４１２０オングストローム）が得られ
ないのに対し、本発明方法では２０％の酸素量で吸収の
無い酸化チタン薄膜が得られた。酸素ガス量を２５％か
ら２０％に減少させることにより、膜の付着速度を３倍
に上昇させることができる。As a result, in the conventional method, the amount of oxygen gas is 25%.
If it is not more than (capacity / capacity), a titanium oxide thin film without absorption (3530 to 4120 angstroms) cannot be obtained, whereas the method of the present invention can obtain a titanium oxide thin film without absorption at an oxygen amount of 20%. .. By reducing the amount of oxygen gas from 25% to 20%, the deposition rate of the film can be tripled.
【００２０】実験例２ 図１に示した装置を用い、ターゲット２９として金属チ
タンを、また、基板２７としてガラス板をセットした。Experimental Example 2 Using the apparatus shown in FIG. 1, metallic titanium was set as the target 29 and a glass plate was set as the substrate 27.
【００２１】ついで、真空槽１１内を真空ポンプ１３に
より５×１０-6Ｔｏｒｒまで排気した後、ガスボンベ１
５からバリアブルバルブ１７を介してアルゴンガスを、
また、ガスボンベ１５′からバリアブルバルブ１７′を
介して窒素ガスを真空槽１１内に導入してスパッタ圧力
３×１０-3Ｔｏｒｒとし、基板２７を約３００℃に加熱
しながら反応性スパッタし、基板２７上に窒化チタン薄
膜を形成した。Then, the inside of the vacuum chamber 11 is evacuated by the vacuum pump 13 to 5 × 10 -6 Torr, and then the gas cylinder 1
Argon gas from 5 through the variable valve 17,
Also, nitrogen gas was introduced from the gas cylinder 15 'through the variable valve 17' into the vacuum chamber 11 to a sputtering pressure of 3 × 10 -3 Torr, the substrate 27 was heated to about 300 ° C., and reactive sputtering was performed. A titanium nitride thin film was formed on 27.
【００２２】このとき、磁石装置３１は固定とした。ま
た、直流電源４１により３ＫＷのＤＣ電力を、高周波電
源４３（１３．５６ＭＨｚ）により７００Ｗの高周波電
力を印加した。At this time, the magnet device 31 was fixed. Further, DC power of 3 KW was applied by the DC power supply 41, and high frequency power of 700 W was applied by the high frequency power supply 43 (13.56 MHz).
【００２３】窒素ガスとアルゴンガスの導入量比を変化
させて反応性スパッタを繰り返し、窒化チタン膜の色お
よび付着速度を測定した。Reactive sputtering was repeated by changing the introduction ratio of nitrogen gas and argon gas, and the color and deposition rate of the titanium nitride film were measured.
【００２４】また、高周波電力を重畳させることなく、
ＤＣ電力のみで行なう通常のＤＣスパッタ法（従来法）
によっても、同様の反応性スパッタを行なった。Further, without superposing high frequency power,
Ordinary DC sputtering method that uses only DC power (conventional method)
The same reactive sputtering was also performed by.
【００２５】この結果、従来法では窒素ガス分圧が３．
２〜３．３×１０-4Ｔｏｒｒの範囲で、金色を呈する窒
化チタン薄膜（３３１０〜６２９０オングストローム）
が得られたのに対し、本発明方法では２．９〜３．０×
１０-4Ｔｏｒｒの窒素分圧で金色を呈する窒化チタン薄
膜が得られた。窒素ガス分圧を３．２〜３．３×１０-4
Ｔｏｒｒから２．９〜３．０×１０-4Ｔｏｒｒに減少さ
せることにより、膜の付着速度を１．２倍に上昇させる
ことができる。As a result, in the conventional method, the partial pressure of nitrogen gas is 3.
Gold nitride titanium nitride thin film in the range of 2 to 3.3 × 10 -4 Torr (3310 to 6290 angstroms)
Was obtained, whereas in the method of the present invention, 2.9 to 3.0 ×
At a nitrogen partial pressure of 10 −4 Torr, a gold-colored titanium nitride thin film was obtained. Nitrogen gas partial pressure is 3.2 to 3.3 × 10 -4
By reducing from Torr to 2.9 to 3.0 × 10 −4 Torr, the film deposition rate can be increased 1.2 times.
【図１】本発明の実施例を示す説明図である。FIG. 1 is an explanatory diagram showing an embodiment of the present invention.
【図２】ターゲットと磁石装置との関係を示す説明斜視
図である。FIG. 2 is an explanatory perspective view showing a relationship between a target and a magnet device.
１１ 真空槽 １３ 真空ポンプ １５ ガスボンベ １５′ ガスボンベ １７ バリアブルバルブ １７′ バリアブルバルブ ２１ スパッタ電極 ２３ 絶縁体 ２５ 基板ホルダ ２７ 基板 ２９ ターゲット ３１ 磁石装置 ３３ Ｎ磁石 ３５ Ｓ磁石 ３７ ヨーク ３９ 磁力線 ４１ 直流電源 ４３ 高周波電源 ４５ マッチングボックス 11 Vacuum Tank 13 Vacuum Pump 15 Gas Cylinder 15 'Gas Cylinder 17 Variable Valve 17' Variable Valve 21 Sputtering Electrode 23 Insulator 25 Substrate Holder 27 Substrate 29 Target 31 Magnet Device 33 N Magnet 35 S Magnet 37 Yoke 39 Magnetic Field 41 DC Power Supply 43 High Frequency Power Supply 45 Matching Box
Claims (1)
するに際し、ターゲットに直流電力と高周波電力とを重
畳せしめて供給し、ターゲットをスパッタすることを特
徴とする化合物薄膜の形成方法。Claim: What is claimed is: 1. When forming a compound thin film by reactive sputtering, DC power and high frequency power are superposed and supplied to a target, and the target is sputtered to form a compound thin film. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19843691A JPH0517871A (en) | 1991-07-12 | 1991-07-12 | Formation of compound thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19843691A JPH0517871A (en) | 1991-07-12 | 1991-07-12 | Formation of compound thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0517871A true JPH0517871A (en) | 1993-01-26 |
Family
ID=16391056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19843691A Pending JPH0517871A (en) | 1991-07-12 | 1991-07-12 | Formation of compound thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0517871A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6019045A (en) * | 1997-04-25 | 2000-02-01 | Fuji Photo Film Co., Ltd. | Process for the preparation of ink jet process printing plate |
| JP2013163856A (en) * | 2012-02-13 | 2013-08-22 | Tokyo Electron Ltd | Sputtering apparatus |
-
1991
- 1991-07-12 JP JP19843691A patent/JPH0517871A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6019045A (en) * | 1997-04-25 | 2000-02-01 | Fuji Photo Film Co., Ltd. | Process for the preparation of ink jet process printing plate |
| JP2013163856A (en) * | 2012-02-13 | 2013-08-22 | Tokyo Electron Ltd | Sputtering apparatus |
| WO2013121766A1 (en) * | 2012-02-13 | 2013-08-22 | 東京エレクトロン株式会社 | Sputter device |
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